Sensor package including sensor die

Abstract

This disclosure relates to embodiments of a sensor package including a sensor die, the sensor package comprising a doped resin on corresponding surfaces and sidewalls of a transparent portion, a sensor die, and a support structure extending from the transparent portion to the sensor die. The support structure suspends the transparent portion above the sensor of the sensor die. The doped resin is doped with an additive material, and the additive material is activated by exposing the doped resin to a laser. The doped resin is exposed to the laser to form a conductive layer extending along the doped resin to provide electrical connections within the sensor package and to electronic components exposed outside the embodiment of the sensor die package. The conductive layer is at least partially covered by a non-conductive layer.

Description

Technical Field

[0001] This disclosure relates to a sensor package including at least one conductive layer aligned with the sidewall of the sensor die. Background Technology

[0002] Typically, sensor packages, such as chip-scale packages or wafer-level chip-scale packages (WLCSPs), include an integrated circuit die coupled to a substrate surface. The integrated circuit die can be a sensor die configured to detect any number or quality of quantities, or it can be a controller, such as a microprocessor or memory, used to control various other electronic components inside or outside the sensor package. For example, the integrated circuit die can detect light, temperature, pressure, stress, strain, sound, or any other type of quantity or quality.

[0003] A conventional optical sensor package may include a conventional optical sensor die coupled to a first surface of a substrate. The sensor die can be electrically coupled to a first conductive pad on the first surface of the substrate via multiple wires. Conductive vias are coupled to the first conductive pad and extend through the substrate to a second conductive pad on a second surface of the substrate opposite the first surface. The second conductive pad is used to mount or bond the sensor package to electronic components, such as printed circuit boards (PCBs), outside the sensor package. For example, solder balls can be formed on the second conductive pad and then used to couple the sensor package to the PCB.

[0004] A transparent glass portion is coupled to the surface of an optical sensor die such that the transparent glass portion covers and overlaps the optical sensor on the surface of the optical sensor die. A molding compound covers the sidewalls of the transparent glass portion and the optical sensor die and encapsulates multiple wires. The molding compound typically has a first thickness that is substantially equal to or greater than the sum of a second thickness of the optical sensor die and a third thickness of the transparent glass portion. Summary of the Invention

[0005] This disclosure describes an embodiment of a sensor die package including a transparent portion suspended above a sensor on the sensor die. The transparent portion is coupled to the sensor die via a support structure to protect the sensor. The transparent portion, the support structure, and the respective sidewalls and surfaces of the sensor die are covered in a doped resin containing an additive material, which may be an inorganic, non-conductive metallic material. Conductive layers extend along the doped resin. Some of the conductive layers may form electrical connections within the sensor package, and some of the conductive layers may be electromagnetic (EM) shielding or optical shielding. For example, when some of the conductive layers are optical shielding, they may reflect light, making it difficult for light to enter the sidewalls of the transparent portion.

[0006] At least some embodiments of the sensor package disclosed herein can be optical sensor packages. The sensor can be a light sensor that detects light entering the package through a transparent portion suspended above the sensor. For example, the optical sensor package can be a time-of-flight sensor.

[0007] The conductive layer can be formed using laser direct forming (LDS) technology, in which additive materials within the doped resin are activated by exposing selected areas or portions of the doped resin to a laser. After the selected areas or portions of the doped resin are exposed to the laser to form the conductive layer, plating techniques (e.g., electroless plating) can be performed to adhere the conductive material to the conductive layer formed by the LDS technology. Attached Figure Description

[0008] To better understand the embodiments, reference will now be made to the accompanying drawings by way of example. In the drawings, unless the context otherwise requires, the same reference numerals denote the same or similar elements or actions. The dimensions and relative proportions of the elements in the drawings are not necessarily drawn to scale. For example, some of these elements may be enlarged and positioned to improve the readability of the drawings.

[0009] Figure 1 The diagram shows the routes respectively. Figure 2 and Figure 3 The cross-sectional view of an embodiment of the sensor package of this disclosure is shown by lines AA and BB;

[0010] Figure 2 The diagram shows... Figure 1 A top plan view of an embodiment of the sensor package shown;

[0011] Figure 3 The diagram shows... Figure 1 A top plan view of an alternative embodiment of the sensor package shown;

[0012] Figure 4 The diagram shows... Figure 1 A bottom plan view of an embodiment of the sensor package shown;

[0013] Figure 5 A cross-sectional view of an alternative embodiment of the sensor package of this disclosure is illustrated;

[0014] Figure 6 A cross-sectional view of an alternative embodiment of the sensor package of this disclosure is illustrated;

[0015] Figure 7 The diagram shows... Figure 1 The cross-sectional view of an embodiment of the sensor package shown is provided, wherein the lens assembly is located on the sensor package of the embodiment.

[0016] Figures 8A-8EThe illustration shows the manufacturing process. Figure 4 A cross-sectional view of an embodiment of the method of an alternative embodiment of the sensor packaging shown;

[0017] Figure 9 The illustration shows the manufacturing process. Figure 5 A cross-sectional view of an embodiment of the method of an alternative embodiment of the sensor packaging shown; and

[0018] Figures 10A-10D The illustration shows the manufacturing process. Figure 1 A cross-sectional view of an embodiment of the method of the sensor package shown. Detailed Implementation

[0019] In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of this disclosure. However, those skilled in the art will understand that this disclosure may be practiced without these specific details. In other instances, well-known structures associated with electronic components, packaging, and semiconductor manufacturing technologies have not been described in detail to avoid unnecessarily obscuring the description of embodiments of this disclosure.

[0020] Unless the context otherwise requires, throughout the following specification and claims, the word “comprise” and its variations (such as “comprises” and “comprising”) shall be interpreted in an open, inclusive sense, meaning “including but not limited to”.

[0021] The use of ordinal numbers such as first, second, third, etc. does not necessarily imply a sorting, but may simply mean distinguishing between multiple instances of an action or similar structure or material.

[0022] Throughout this specification, references to "an embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment. Therefore, the phrases "in one embodiment" or "in an embodiment" appearing in various places throughout the specification do not necessarily refer to the same embodiment. Furthermore, particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0023] The terms “upper,” “lower,” “upper part,” “lower part,” “left,” and “right” are used only for the purpose of discussion based on the orientation of components in the following discussion of the accompanying drawings of this disclosure. These terms are not intended to limit the possible locations of explicit, implicit, or inherent disclosures in this disclosure.

[0024] The term "substantially" is used to clarify that there may be subtle differences and variations when manufacturing packages in the real world, because nothing can be manufactured to be exactly the same or identical. In other words, "substantially" means and indicates that there may be some minor variations in practice, and therefore, preparation or manufacturing within a selected tolerance range.

[0025] As used in this specification and the appended claims, unless otherwise expressly stated, the singular forms “a,” “an,” and “the” include plural indicators.

[0026] Although various embodiments have been shown and described with respect to semiconductor dies, it will be readily understood that embodiments of this disclosure are not limited thereto. In various embodiments, the structures, apparatuses, methods, etc., described herein can be implemented as, or utilized as, any suitable type or form of semiconductor die, and can be manufactured using any suitable semiconductor die and packaging technology.

[0027] In at least one embodiment of the sensor package disclosed herein, a doped resin is located on the respective surfaces and sidewalls of the sensor die and the transparent portion (e.g., glass or some other type of light-transmitting or transparent material so that light can easily pass through the transparent portion). The doped resin has a first thickness, which is less than a second thickness of the sensor die and less than a third thickness of the transparent portion. At least one conductive layer is formed on the doped resin and has a fourth thickness less than the first and second thicknesses. At least one non-conductive layer is located on the conductive layer and at least partially covers the conductive layer.

[0028] In at least one embodiment of the method for manufacturing at least one embodiment of the sensor package of this disclosure, a first conductive layer is formed by exposing a doped resin to a laser followed by a plating technique (e.g., electroplating, electroless plating, etc.). For example, the laser can selectively move along the doped resin to activate an additive material (e.g., an inorganic non-conductive metal compound) within the doped resin. Activating the additive material converts it from a non-conductive state to a conductive state. This activation of the additive material forms at least a first layer of conductive material on the doped resin. Once the first layer of conductive material is formed, its thickness can be in the range of hundreds of nanometers (nm) or several micrometers (μm), a plating technique is performed to form a second layer of conductive material on top of the first layer of conductive material.

[0029] Typically, in conventional sensor packages, the thickness of the conventional molding compound is generally equal to or greater than the sum of the corresponding thicknesses of the conventional sensor die and the conventional transparent portion encapsulated within the conventional molding compound. The conventional sensor die, the conventional transparent portion, and the conventional molding compound all have different coefficients of thermal expansion (CTE). These differences in CTE can lead to faults or defects, including cracking of the conventional transparent portion or peeling of the conventional sensor die from the conventional substrate coupled to the conventional sensor die. For example, if the conventional molding compound expands or contracts more than the conventional transparent portion due to a rapid increase or decrease in temperature, the molding compound may expand or contract more than the conventional transparent portion. This difference in expansion or contraction can cause cracks to propagate near the edges of the conventional transparent portion. Similarly, if the conventional molding compound expands or contracts more than the sensor die due to a rapid increase or decrease in temperature, the molding compound may expand or contract more than the conventional sensor die, causing the conventional sensor die to peel from the conventional substrate starting near the edge of the conventional sensor die. These defects can lead to conventional sensor package failure or cause the conventional sensor package to operate at reduced capacity.

[0030] However, unlike the conventional molding compounds in conventional sensor packages discussed above, the doped resin in at least one embodiment of the sensor package of this disclosure has a first thickness, which is less than a second thickness of the sensor die and less than a third thickness of the transparent portion. The expansion or contraction effect of the doped resin is less than the expansion effect of a conventional molding compound that is thicker than the doped resin. For example, when the doped resin expands or contracts due to a rapid increase or decrease in temperature, the stress and strain applied to the transparent portion and the sensor die due to this expansion or contraction of the doped resin are smaller compared to the expansion or contraction of a conventional molding compound. The stress and strain effects caused by the doped resin are smaller because, as discussed above, there is less doped resin compared to conventional moldings in conventional sensor packages.

[0031] The doped resin can have a different coefficient of thermal expansion (CTE) than the sensor die and the transparent portion. This difference in CTE between the doped resin, the transparent portion, and the sensor die in the sensor package can be at least partially mitigated by the thinness of the doped resin relative to the corresponding thickness of the sensor die and the transparent portion. In other words, the thinness of the doped resin can reduce the likelihood of faults or defects, including crack propagation or peeling of the sensor die from the substrate coupled to the sensor die.

[0032] At least some embodiments of the sensor package disclosed herein may have a total thickness ranging from ~250 μm to 650 μm, a width ranging from ~3 mm to 15 mm, and a length ranging from ~3 mm to 15 mm. Conventional sensor packages, as discussed above, typically have larger dimensions than those of the sensor packages disclosed herein. In other words, embodiments of the sensor package disclosed herein, such as the conventional semiconductor sensor packages discussed above, are relatively thinner and smaller. These at least some embodiments of the sensor package disclosed herein do not include multiple wires for forming electrical connections. The absence of multiple wires reduces the overall profile or footprint of these embodiments of the sensor package disclosed herein to be smaller than that of conventional sensor packages, allowing these sensor packages to occupy less space within electronic components (e.g., smartphones, tablets, computers, etc.). Because gaps are not required to form electrical connections utilizing multiple wires, the absence of multiple wires reduces the overall profile or footprint of the sensor package embodiments. Alternatively, at least one conductive layer formed on a doped resin forms electrical connections within these embodiments of the sensor package.

[0033] In at least one embodiment of the sensor package disclosed herein, the sensor package includes: a sensor die having conductive pads on a first surface of the die; a support structure on the first surface; and a transparent portion spaced apart from the first surface on the support structure. The transparent portion covers and overlaps an optical sensor of the sensor die. The support structure is adjacent to and surrounds the optical sensor, and the optical sensor is located in a cavity defined by the first surface of the sensor die, the support structure, and the transparent portion. A doped resin comprising additive materials such as inorganic non-conductive metal compounds is applied to and covers the respective sidewalls of the transparent portion, the support structure, and the sensor die. The doped resin is applied to and covers a second surface of the sensor die opposite to the first surface of the sensor die, and the doped resin is also applied to the first surface of the sensor die. The doped resin may be applied to a third surface of the transparent portion, which is opposite to the first surface of the sensor die.

[0034] Embodiments of the sensor package further include a first conductive layer extending and situated thereon along portions of doped resin present on a first surface of the sensor die, a second surface of the sensor die, and a first sidewall extending from the first surface to the second surface. A second conductive layer extending and situated thereon along portions of doped resin present on a second sidewall of the support structure and a third sidewall of the transparent portion. The second conductive layer may extend and situated thereon along portions of doped resin present on a third surface of the transparent portion. The first and second conductive layers are separate from each other and distinct. In at least one alternative embodiment of the sensor package, the first and second conductive layers may be replaced by a single continuous conductive layer extending and situated thereon along portions of doped resin present on the first and second surfaces of the sensor die, and on the first, second, and third sidewalls of the sensor die, support structure, and transparent portion.

[0035] A non-conductive layer extends along and rests on the doped resin, the first conductive layer, and the second conductive layer. The non-conductive layer covers the first and second conductive layers. The non-conductive layer includes an opening that exposes a corresponding portion of the first conductive layer on the doped resin present at a second surface of the sensor die.

[0036] Figure 1 The diagram shows the routes respectively. Figure 2 and Figure 3 The image shows a cross-sectional view of the sensor package 100 taken by line AA or line BB. The sensor package 100 includes a sensor die 102 having a first surface 104, a second surface 106 opposite to the first surface 104, a first sidewall 107 extending from the first surface 104 to the second surface 106, and a second sidewall 109 extending from the first surface 104 to the second surface 106. The second sidewall 109 is opposite to the first sidewall 107. The first and second sidewalls 107 and 109 are transverse to the first and second surfaces 104 and 106.

[0037] The sensor die 102 has a first thickness 105 extending from the first surface 104 to the second surface 106 in a first direction transverse to the first surface 104 and the second surface 106. The first and second sidewalls 107 and 109 have a first dimension. The first thickness 105 can have a range from ~100 μm to 300 μm. The sensor die 102 includes a first dimension 111 extending from the first sidewall 107 to the second sidewall 109 in a second direction transverse to the first sidewall 107 and the second sidewall 109. The second direction is transverse to the first direction and can be orthogonal to the first direction. The first dimension 111 can have a range from ~3 mm to 15 mm.

[0038] The first conductive pad 108 and the second conductive pad 110 of the sensor die 102 are located on the first surface 104 of the sensor die 102. The first conductive pad 108 is on the left side of the sensor package 100, and the second conductive pad 110 is on the right side of the sensor package 100.

[0039] Sensor 112 of sensor die 102 is located at first surface 104. Sensor 112 may be a light sensor configured to detect light, determine the intensity of light, or detect or determine some other quantity or quality of light incident on the sensor. For example, sensor 112 may be a pixel array configured to detect light entering the package through the transparent portion 114 of sensor package 100.

[0040] The transparent portion 114 includes a third surface 116 (e.g., an inner surface within the sensor package 100) facing the first surface 104 and overlapping the sensor 112, and a fourth surface 118 (e.g., an outer surface exposed from the sensor package 100). The transparent portion 114 is made of a light-transmitting or transparent material to allow light to easily pass through the transparent portion 114 into the sensor package 100 to be incident on the sensor 112. For example, the transparent portion 114 may be made of glass or some other suitable type of light-transmitting or transparent material. The transparent portion 114 also includes a third sidewall 117 extending from the third surface 116 to the fourth surface 118, and a fourth sidewall 119 extending from the third surface 116 to the fourth surface 118. The fourth sidewall 119 is opposite to the third sidewall 117, and the third and fourth sidewalls 117 and 119 are transverse to the third and fourth surfaces 116 and 118.

[0041] The second thickness 120 of the transparent portion 114 extends from the third surface 116 to the fourth surface in a first direction. The second thickness 120 may have a range from ~150 μm to 400 μm. The second dimension 121 of the transparent portion 114 extends from the third sidewall 117 to the fourth sidewall 119. The second dimension 121 extends in a second direction and may have a range from ~2 mm to 12 mm. At least in this embodiment, the second dimension 121 is smaller than the first dimension 111, such that the third and fourth sidewalls 117, 119 of the transparent portion 114 are spaced inwardly from the first and second sidewalls 107, 109 of the sensor die 102.

[0042] Support structure 122 extends from first surface 104 to third surface 116. Support structure 122 couples transparent portion 114 to sensor die 102 such that transparent portion 114 is suspended above sensor 112. Support structure 122 includes an inner wall 124 facing inward toward sensor 112 and an outer wall 126 facing away from sensor 112. Support structure 122 may be an epoxy resin bead or some other type of bracket, support, or spacer that supports transparent portion 114 and separates it from sensor die 102.

[0043] Cavity 128 is located between first surface 104 and third surface 116 and is surrounded by support structure 122. First surface 104, third surface 116, and inner sidewall 124 define cavity 128, and cavity 128 contains a sensor such that sensor 112 is sealed to isolate it from the external environment outside sensor package 100, thereby protecting sensor 112 from debris or external forces. A third thickness 130 of cavity 128 extends from first surface 104 to third surface 116 in a first direction. Third thickness 130 can range from ~10 μm to 50 μm. Third thickness 130 is less than first thickness 105 and less than second thickness 120. Third dimension 132 extends from the inner sidewall 124 on the left side of cavity 128 to the inner sidewall 124 on the right side of cavity 128. Third dimension 132 can range from ~1 mm to 10 mm. Third dimension 132 is less than first dimension 111 and less than second dimension 121.

[0044] The doped resin layer 134 is on the first and second surfaces 104, 106, on the first and second sidewalls 107, 109, on the outer sidewall 126, on the third and fourth sidewalls 117, 119, and on the fourth surface 118. The doped resin 134 completely covers the second surface 106 of the sensor die 102, completely covers the first and second sidewalls 107, 109, and partially covers the first surface 104 of the sensor die 102, such that the doped resin 134 covers the peripheral region 145 of the first surface 104. The doped resin 134 completely covers the outer sidewall 126 of the support structure 122 and the third and fourth sidewalls 117, 119 of the transparent portion 114. The doped resin 134 partially covers the fourth surface 118 of the transparent portion 114, such that the doped resin 134 covers the peripheral region 145 of the fourth surface 118 while leaving the central region 144 of the fourth surface 118 uncovered. The doped resin 134 is doped with an additive material (e.g., an inorganic non-conductive metal compound, which may include a metallic material) that is activated by a laser. When the additive material is activated by exposure to a laser, it transforms from an inorganic non-conductive metal compound or material into a conductive compound or material (e.g., a conductive layer, which may be a metallic layer). The doped resin 134 is relatively thin compared to the sensor die 102 and the transparent portion 114. For example, the doped resin 134 may have a thickness ranging from ~15 μm to 30 μm. The thickness of the doped resin 134 remains substantially constant and extends along the doped resin 134 from the second surface 106, the first and second sidewalls 107, 109, the first surface 104, the outer sidewall 126, the third and fourth sidewalls 117, 119, and the fourth surface 118.

[0045] A first conductive layer 136 extends along portions of the doped resin 134 present on the second surface 106, the first sidewall 107, and the first surface 104. A second conductive layer 137 extends along the first conductive layer 136. In some embodiments, the first and second layers may be made of the same conductive material, or in some alternative embodiments, the first and second conductive layers 136 and 137 may be made of different conductive materials. The first conductive layer 136 extends through the doped resin 134 to the first conductive pad 108 such that the first conductive layer 136 is coupled to the first conductive pad 108.

[0046] The third conductive layer 138 extends along portions of the doped resin 134 present on the second surface 106, the second sidewall 109, and the first surface 104. The fourth conductive layer 139 extends along the third conductive layer 138. In some embodiments, the third and fourth conductive layers 138 and 139 may be made of the same conductive material, or in some alternative embodiments, the third and fourth conductive layers 138 and 139 may be made of different conductive materials. The third conductive layer 138 extends through the doped resin 134 to the second conductive pad 110, such that the second conductive layer 137 is coupled to the second conductive pad 110.

[0047] The first, second, third, and fourth conductive layers 138 and 139 may terminate on portions of the doped resin 134 on the second surface 106 of the sensor die 102. The first, second, third, and fourth conductive layers 138 and 139 may terminate on or near the first and second conductive pads 108 and 110, respectively.

[0048] The fifth conductive layer 140 extends along portions of the outer sidewall 126, third sidewall 117, and fourth surface 118 of the support structure 122 at the left end of the cavity 128 of the doped resin 134. The sixth conductive layer 141 extends along the fifth conductive layer 140. In some embodiments, the fifth and sixth conductive layers 140 and 141 may be made of the same conductive material, or in some alternative embodiments, they may be made of different conductive materials. The fifth and sixth conductive layers 140 and 141 terminate at portions of the doped resin 134 present on the first surface 104 of the sensor die 102 and at portions of the doped resin 134 present on the peripheral region 145 of the fourth surface 118 of the transparent portion 114. The fifth and sixth conductive layers 140 and 141 cover at least a portion of the peripheral region 145 of the fourth surface 118 of the doped resin 134.

[0049] The seventh conductive layer 142 extends along portions of the outer sidewall 126, fourth sidewall 119, and fourth surface 118 of the support structure 122 at the right-hand end of the cavity 128 of the doped resin 134. The eighth conductive layer 143 extends along the seventh conductive layer 142. In some embodiments, the seventh and eighth conductive layers 142 and 143 may be made of the same conductive material, or in some alternative embodiments, they may be made of different conductive materials. The seventh and eighth conductive layers terminate at portions of the doped resin 134 on the first surface 104 of the sensor die 102 and at portions of the doped resin 134 present on the peripheral region 145 of the fourth surface 118 of the transparent portion 114. The fourth conductive layer 139 covers at least a portion of the peripheral region 145 of the fourth surface 118 of the doped resin 134.

[0050] The third and fourth conductive layers 138 and 139 may be part of a multilayer conductive layer that surrounds all sidewalls of the transparent portion 114 and completely covers the peripheral region 145 of the transparent portion 114 adjacent to its edge. The multilayer conductive layer may be an electromagnetic shield (e.g., a barrier), a light shield (e.g., a barrier), or both. When the third and fourth conductive layers 138 and 139 are part of a light shield, they are opaque and absorb light incident on them. The third and fourth conductive layers 138 and 139 prevent any light entering the transparent portion 114 from passing through the third and fourth sidewalls 117 and 119 of the transparent portion 114 and the peripheral region 145 of the fourth surface 118 of the transparent portion 114. In other words, when the third and fourth conductive layers 138 and 139 are part of the light shield, the light shield prevents any light from passing through the sidewall of the transparent portion 114 or through the peripheral region 145 of the fourth surface 118 of the transparent portion 114 into the sensor package 100.

[0051] In an alternative embodiment of the sensor package 100, the third and fourth conductive layers 138, 139 may be separate from and different from each other, such that they may be separate and different electromagnetic shielding elements (e.g., barriers), separate and different optical shielding elements (e.g., barriers), or separate and different independent electromagnetic shielding elements and optical shielding elements.

[0052] In such Figure 1 In this embodiment of the sensor package 100 shown, the first and second conductive layers 136, 137 are separate and distinct from the third and fourth conductive layers 138, 139. In some alternative embodiments, the first conductive layer 136 may be coupled to the third conductive layer 138, such that the first and third conductive layers 136, 138 are multilayer conductive layers. In some alternative embodiments, the second conductive layer 137 may be coupled to the fourth conductive layer 139, such that the second and fourth conductive layers 137, 139 are multilayer conductive layers. In some alternative embodiments, the first, second, third, and fourth conductive layers 136, 137, 138, 139 may all be coupled together, such that the first, second, third, and fourth conductive layers 136, 137, 138, 139 are all part of a multilayer conductive layer.

[0053] A non-conductive layer 147 is placed on the first, second, third, and fourth conductive layers 136, 137, 138, and 139 and on the doped resin 134. The non-conductive layer 147 is adjacent to and covers the second and fourth conductive layers 137 and 139. The non-conductive layer 147 can be a passivation layer, a re-passivation layer, an insulating layer, a solder resist layer, a mask layer, or some other suitable type of non-conductive layer 147, which electrically isolates the first and second conductive layers 136 and 137 from the fifth and sixth conductive layers 140 and 141, and electrically isolates the third and fourth conductive layers 138 and 139 from the seventh and eighth conductive layers 142 and 143. These respective conductive layers can be electrically isolated from each other to avoid electrical crosstalk between the respective conductive layers, thereby reducing the possibility of short circuits occurring within the sensor package 100.

[0054] A first opening 146 exists at the fourth surface 118 of the transparent portion 114. The first opening 146 extends over the doped resin 134, the first conductive layer 136, the second conductive layer 137, and the non-conductive layer 147 of the transparent portion 114, which expose the central region 144 of the fourth surface 118. The central region 144 of the fourth surface 118 is surrounded by the peripheral region 145 of the transparent portion 114.

[0055] The first opening 146 is defined by sidewalls 151 and 153. In this embodiment of the sensor package 100, the left-hand sidewall of the first opening 146 includes the surfaces of the doped resin 134, the fifth and sixth conductive layers 140 and 141, and the non-conductive layer 147, and these surfaces are coplanar and flush with each other. In this embodiment of the sensor package 100, the right-hand sidewall of the first opening 146 includes the surfaces of the doped resin 134, the seventh and eighth conductive layers 142 and 143, and the non-conductive layer 147, and these surfaces are coplanar and flush with each other. In some alternative embodiments of the sensor package 100, the surfaces of the doped resin 134, the fifth and sixth conductive layers 140 and 141, and the seventh and eighth conductive layers 142 and 143 may be covered by the non-conductive layer 147, such that the sidewall is only the surface of the non-conductive layer 147.

[0056] A second opening 148 exists at a portion of the second conductive layer 137 on the second surface 106 of the sensor die 102. The second opening 148 extends through the non-conductive layer 147 and exposes the surface 150 of the second conductive layer 137. A third opening 152 exists at a portion of the fourth conductive layer 139 on the second surface 106 of the sensor die 102. The third opening 152 extends through the non-conductive layer 147 and exposes the surface 154 of the fourth conductive layer 139. The second and third openings 148 and 152 can be openings among a plurality of openings, exposing conductive layers similar to the first, second, third, and fourth conductive layers 136, 137, 138, and 139. In other words, the plurality of openings existing at the second surface 106 of the sensor die 102 can expose corresponding conductive layers among a plurality of conductive layers.

[0057] The respective surfaces 150 and 154 of the second and fourth conductive layers 137 and 139 can be bonding surfaces, contact surfaces, or other types of surfaces that can be used to mount or couple the sensor package 100 to external components, such as printed circuit boards (PCBs). For example, solder balls can be coupled to the respective surfaces 150 and 154 of the second and fourth conductive layers 137 and 139, and then they are also coupled to contact pads or bonding pads on the PCB.

[0058] The first outer sidewall 156 of the non-conductive layer 147 is in Figure 1 On the left side, and the second outer wall 158 of the non-conductive layer 147 is... Figure 1 On the right-hand side. The first outer wall 156 is opposite to the second outer wall 158. The fourth dimension 160 extends from the first outer wall 156 to the second outer wall 158 in a second direction. The fourth dimension 160 is larger than the first dimension, the second dimension 121 and the third dimension 132. The fourth dimension 160 may have a range from ~3 mm to 15 mm.

[0059] The third outer sidewall 162 of the non-conductive layer 147 is spaced to the right and inward from the first outer sidewall 156, and the fourth outer sidewall 164 of the non-conductive layer 147 is spaced to the left and inward from the second outer sidewall 158. The third outer sidewall 162 and the fourth outer sidewall 164 are opposite each other. A fifth dimension 166 extends from the third outer sidewall 162 to the fourth outer sidewall 164 in a second direction. The fifth dimension 166 is smaller than the first dimension and smaller than the fourth dimension 160. The fifth dimension 166 can have a range from ~2 mm to 12 mm.

[0060] Due to the stacked configuration of the sensor die 102 and the transparent portion 114, the sensor package 100 has a stepped structure. The respective surfaces 168, 170, 172, and 174 of the non-conductive layer 147, aligned with and located on the first surface 104 of the sensor die 102 and the fourth surface 118 of the transparent portion 114, can be referred to as tread surfaces. The respective sidewalls 156, 158, 162, and 164 of the non-conductive layer 147, aligned with and located on the first, second, third, and fourth sidewalls 107, 109, 117, and 119, can be referred to as rising surfaces.

[0061] Figure 2 A top view of an embodiment of the sensor package 100 is illustrated. In this embodiment, when viewed in the top view, the transparent portion 114 has a rectangular size and shape. A first opening 146 is located within a boundary defined by the edge of the transparent portion 114, such that the first opening 146 is spaced inwardly from the boundary. When viewed in the top view, the first opening 146 has a rectangular size and shape.

[0062] The corresponding surfaces 168 and 170 of the portion of the non-conductive layer 147 aligned with and located on the first surface 104 of the sensor die 102 may be among a plurality of surfaces that surround and are spaced laterally outward from the transparent portion 114. The corresponding surfaces 172 and 174 may be among a plurality of surfaces that surround and are spaced laterally outward from the first opening 146.

[0063] Figure 3 A top view of an embodiment of the sensor package 100 is illustrated. In this embodiment, when viewed in the top view, the first opening 146 has an elliptical size and shape. Given that... Figure 2 and Figure 3 The embodiment of the first opening 146 shown may have a rhomboid size and shape, a trapezoidal size and shape, or some other type of size and shape.

[0064] Figure 4 The illustration shows a bottom plan view of one embodiment of the sensor package 100. The respective surfaces 150, 154 of the first and second conductive layers 136, 137 are conductive pads among a plurality of conductive pads exposed on a first side of the sensor package 100 opposite to the second side of the sensor package where the first opening 146 is located. In this embodiment, the plurality of conductive pads have a three-row, two-column arrangement. In some other embodiments, the plurality of conductive pads may have a four-row, three-column, two-row, two-column, or some other number of rows and columns. In this embodiment, the plurality of conductive pads includes six conductive pads. In some other embodiments, the plurality of conductive pads may include one conductive pad, two conductive pads, three conductive pads, or any other number of conductive pads.

[0065] Figure 5 This is a cross-sectional view of an alternative embodiment of the sensor package 200. (As shown in the image) Figure 1 The sensor package 100 shown has the same or similar features. Figure 5 Features in the sensor package 200 shown will have the same reference numerals. For the sake of brevity and simplicity of this disclosure, details of these similar or identical features will not be reproduced here, at least not in their entirety.

[0066] With Figure 1 The sensor package 100 shown is different, such as Figure 5 The sensor package 200 shown includes a first non-conductive layer 202, a second non-conductive layer 204, a third non-conductive layer 206, a ninth conductive layer 208, and a tenth conductive layer 210.

[0067] A first non-conductive layer 202 is located on and adjacent to the second surface 106 of the sensor die 102. The first non-conductive layer 202 may be a passivation layer, a re-passivation layer, an insulating layer, or a solder resist layer, or some other suitable type of non-conductive layer. Figure 1 The sensor package 100 shown is different, such as Figure 5 The doped resin 134 shown does not extend along or lie on the second surface 106 of the sensor die 102. Instead, the doped resin 134 terminates on the first non-conductive layer 202.

[0068] A ninth conductive layer 208 is placed on and extends into the first non-conductive layer 202 to reach the first and second conductive layers 136 and 137, such that the ninth conductive layer 208 is coupled to the first and second conductive layers 136 and 137. The ninth conductive layer 208 includes a contact portion 208a and a via portion 208b. The via portion extends from the contact portion to the first and second conductive layers 136 and 137, such that the contact portion is electrically connected to the first and second conductive layers 136 and 137 through the via portion.

[0069] The tenth conductive layer 210 is located on and extends into the first non-conductive layer 202 to reach the third and fourth conductive layers 138 and 139, such that the tenth conductive layer 210 is coupled to the third and fourth conductive layers 138 and 139. The tenth conductive layer 210 includes a contact portion 210a and a via portion 210b. The via portion extends from the contact portion to the first and second conductive layers 136 and 137, such that the contact portion is electrically connected to the first and second conductive layers 136 and 137 through the via portion.

[0070] In some embodiments, the ninth and tenth conductive layers 208, 210 may be made of the same conductive material, or in some alternative embodiments, the ninth and tenth conductive layers 208, 210 may be made of different conductive materials relative to each other. In some embodiments, the ninth and tenth conductive layers 208, 210 may each be made of a multilayer conductive material coupled to each other, so that electrical signals can be transmitted into and out of the sensor die 102 within the sensor package 200.

[0071] The second non-conductive layer 204 is on the first non-conductive layer 202 and on the ninth and tenth conductive layers 208, 210. The second non-conductive layer 204 may cover the peripheral areas of the ninth and tenth conductive layers 208, 210, while leaving contact surfaces 212, 214 exposed at the central areas by corresponding openings 216, 218 in the second non-conductive layer 204. The contact surfaces 212, 214 are used to mount or bond the sensor package 200 to electronic components, such as printed circuit boards (PCBs), outside the sensor package 200. For example, solder balls may be formed on the contact surfaces 212, 214 and then used to couple the sensor package 200 to the PCB. The contact surfaces 212, 214 may be referred to as contact pads, bonding pads, or some other type of suitable conductive structure for coupling the sensor package 200 to electronic components.

[0072] The third non-conductive layer 206 is on the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143, on the doped resin 134, and on the first non-conductive layer 202. The third non-conductive layer 206 may be a molding compound, resin, epoxy resin, or some other suitable type of non-conductive layer. The outer surfaces 220 and 222 of the third non-conductive layer 206 are substantially coplanar with the outer surfaces 224 and 226 of the sixth and eighth conductive layers 141 and 143. In some embodiments, when the sixth and eighth conductive layers 141 and 143 are a single, single conductive layer, the outer surfaces 224 and 226 are a single, single outer surface. In some embodiments, when the portions of the third non-conductive layer 206 on the left and right sides of the transparent portion 114 are single, single non-conductive layers, the outer surfaces 220 and 222 of the third non-conductive layer 206 are single, single conductive layers.

[0073] The first sidewall 228 is on the left-hand side of the sensor package 200, and the second sidewall 230 is on the right-hand side of the sensor package 200 and opposite to the first sidewall 228. The first and second sidewalls 228 and 230 include the respective surfaces of the first, second, and third non-conductive layers 202, 204, and 206, which are coplanar and flush with each other.

[0074] In this embodiment of the sensor package 200, the sidewall 151 defining the first opening 146 does not include the surface of the third non-conductive layer 206, but instead includes the doped resin 134 and the surfaces of the fifth, sixth, seventh, and eighth conductive layers 140, 141, 142, and 143. In some alternative embodiments, the sidewall 151 may include the surface of the third non-conductive layer 206 such that the third non-conductive layer 206 is on and covers the outer surfaces 224, 226 of the sixth and eighth conductive layers 141, 143. In some alternative embodiments, the third non-conductive layer 206 may cover the surfaces 224, 226 of the sixth and eighth conductive layers 141, 143 and the sidewall adjacent to the first opening 146, such that the first opening 146 is instead defined by the surface of the third non-conductive layer 206.

[0075] The sixth dimension 232 extends from the first sidewall 228 to the second sidewall 230. The sixth dimension is larger than the second dimension of the transparent portion 114 and larger than the fifth dimension 166 of the sensor die 102. In this embodiment, the first, second, and third non-conductive layers 202, 204, and 206 include the sixth dimension.

[0076] The first, second, and third non-conductive layers 202, 204, and 206 can be selected to have relatively low CTEs, such that any expansion or contraction within the first, second, and third non-conductive layers 202, 204, and 206 has little or no effect on the sensor die 102 or the transparent portion 114. In other words, the effects of expansion or contraction caused by rapid temperature changes in the first, second, and third non-conductive layers 202, 204, and 206 are minimized, so that such expansion and contraction do not cause the transparent portion 114 to crack or the sensor die 102 to peel off from the first non-conductive layer 202.

[0077] Figure 6 This is a cross-sectional view of an alternative embodiment of the sensor package 300. (As shown in the image) Figure 1 and Figure 5 The sensor packages 100 and 200 shown have the same or similar features, such as... Figure 6 Features in the sensor package 300 shown will have the same reference numerals. For the sake of brevity and simplicity of this disclosure, details of these similar or identical features will not be reproduced here, at least not in their entirety.

[0078] With Figure 5 The sensor package 200 shown is different, such as Figure 6 The sensor package 300 shown includes a substrate 302 and does not include, for example, Figure 5 The sensor package 200 shown has first and second non-conductive layers 202, 204. Instead, substrate 302 replaces... Figure 5The first and second non-conductive layers 202 and 204 are shown. The substrate 302 may be a silicon substrate. The substrate 302 may be a multilayer substrate comprising multiple layers, such as a passivation layer, a repassivation layer, a core layer, or some other suitable type of layer that may be a layer of the substrate 302.

[0079] The conductive pads 304 of the substrate 302 are coupled to the sensor die 102 by an adhesive 306. The adhesive 306 can be a die adhesion film, glue, conductive paste (e.g., solder, silver, etc.), or some other suitable type of adhesive for coupling the sensor die 102 to the conductive pads 304. It can also be a die pad that helps dissipate heat in the sensor die 102 when the sensor die 102 is powered. Alternatively, the conductive pads 304 can be electrically connected to contact pads exposed from the outer surface 308 of the substrate 302.

[0080] With Figure 5 Unlike the sensor package 200 shown, the surfaces 220, 222 of the third non-conductive layer 206 are recessed below the surfaces 224, 226 of the sixth and eighth conductive layers 141, 143. In other words, the third non-conductive layer 206 extends from the inner surface 310 of the substrate 302 and terminates before reaching the surfaces of the sixth and eighth conductive layers 141, 143. The inner surface 310 of the substrate 302 is opposite to the outer surface 308 of the substrate 302.

[0081] With Figure 5 The sensor package 200 shown differs from the one shown. On the left-hand side of the sensor package 300, the first sidewall 312 includes the surfaces of the third non-conductive layer 206 and the substrate 302, which are substantially coplanar and flush with each other. On the right-hand side of the sensor package 300, the second sidewall 314 includes the surfaces of the third non-conductive layer 206 and the substrate 302, which are substantially coplanar and flush with each other.

[0082] With Figure 1 Unlike the sensor package 100 shown, the doped resin 134 does not extend along or lie on the second surface 106 of the sensor die 102. Instead, the doped resin 134 terminates at and on the inner surface 310 of the substrate 302. The doped resin 134 extends along the inner surface 310 of the substrate 302 and terminates before reaching the first and second sidewalls 312, 314 of the sensor package 300.

[0083] Multiple first contact pads 316 are located on the outer surface 308 of the substrate 302, and multiple second contact pads 318 are located on the inner surface 310 of the substrate 302. The first contact pads 316 are coupled to corresponding second contact pads 318. The first contact pads 316 are coupled to the second contact pads 318 via multiple conductive vias 320. For example, the conductive vias 320 extend from the first contact pads 316 to corresponding second contact pads 318. The first contact pads 316, the second contact pads 318, and the conductive vias 320 form an electrical connection or pathway along which electrical signals can enter and exit the sensor die 102 and the sensor package 300 to reach external electronic components that communicate electrically with the sensor package 300.

[0084] Figure 7 This is a cross-sectional view of sensor package 400, in which the lens receiving portion 402 is coupled to, as shown in the figure Figure 1 The sensor package 100 shown is illustrated. The lens receiving portion 402 includes a support portion 404 and a threaded portion 406, the support portion 404 being coupled to, as shown in the figure. Figure 1 The corresponding surfaces 170 and 172 shown have a threaded portion 406 coupled to a support portion 404 and suspended above the sensor package 100. The threaded portion 406 receives a lens assembly 408, which includes a threaded structure 410 receiving a first lens 412 and a second lens 414. The first and second lenses 412 and 414 are coupled to the threaded structure 410 and are within an opening 416 in the threaded structure 410. The first lens 412 and the second lens 414 may be convex lenses that focus a light beam onto the sensor 112 when photons pass through them. In some alternative embodiments, there may be only one lens in the opening 416 of the threaded structure 410. In some alternative embodiments, there may be two or more lenses (e.g., three, four, etc.) in the opening 416 of the threaded structure 410. The first lens 412 and the second lens 414 are suspended above and aligned with the first opening 146, exposing the fourth surface 118 of the transparent portion 114, so that light passing through the first lens 412 and the second lens 414 is guided through the first opening 146 into the fourth surface 118 of the transparent portion 114 to reach the sensor 112. The second lens 414 is closer to the transparent portion 114 than the first lens 412.

[0085] The first solder ball 418 is coupled to the surface of the second conductive layer 137, and the second solder ball 420 is coupled to the surface of the fourth conductive layer 139. The first solder ball 418 and the second solder ball 420 can be solder balls from a plurality of solder balls, coupled to, for example, the surface of the fourth conductive layer 139. Figure 7Other conductive layers are not easily visible in the cross-sectional view shown.

[0086] Figures 8A-8E Involving manufacturing such as Figure 5 An embodiment of the method for the sensor package 200 shown. Figures 8A-8E The illustration shows the manufacturing process, such as Figure 5 A cross-sectional view during an embodiment of the method for manufacturing the sensor package 200 shown. For the sake of simplicity and brevity of this disclosure, the following discussion of the manufacturing method will focus on, as Figures 8A-8E The sensor die 102 is shown on the left-hand side. However, it should be readily understood that the following discussion will also apply to the area concerning... Figures 8A-8E Method for manufacturing the sensor die 102 on the right side.

[0087] like Figures 8A-8E The two sensor dies 102 shown may be sensor dies in an array of sensor dies 102, and they are temporarily coupled to the first support 500 by adhesive 502 (which may be a temporary adhesive) to form as shown. Figure 5 The multiple sensor packages 200 shown are illustrated.

[0088] Figure 8A The illustration shows the steps of a method for manufacturing a sensor package 200, wherein a sensor die 102 is coupled to a first support 500 by an adhesive 502. For example, the sensor die 102 can be coupled to the adhesive 502 by placing the sensor die 102 onto the adhesive 502 using a pick-and-place machine. The adhesive 502 may be a temporary adhesive so that the sensor die 102 can be removed from the first support 500 later.

[0089] After the sensor die 102 has been coupled to the first support 500 using a temporary adhesive 502, a support structure 122 is formed on the first surface 104 of the sensor die 102. The support structure 122 can be formed using extrusion molding, injection molding, compression molding, or some other similar forming or deposition technique. For example, epoxy resin or resin material can be selectively extruded onto the first surface 104 of the sensor die 102 to avoid covering the sensor 112 with epoxy resin or resin material, such that the epoxy resin or resin material surrounds or encloses the sensor 112. After selective application, the epoxy resin or resin material is allowed to cure and harden to form the support structure 122. In an alternative embodiment, the support structure 122 can be formed by using a molding tool and injecting epoxy resin or resin material into the molding tool. Each of the support structures 122 surrounds a corresponding sensor 112 in the sensor die 102.

[0090] After forming multiple support structures 122, the transparent portion 114 is coupled to at least one support structure 122. For example, when the corresponding support structure 122 is epoxy resin or a resin material, it is extruded onto the first surface 104, and the transparent portion 114 is coupled to the support structure 122 by placing it on the support structure 122 before the support structure 122 is allowed to cure and harden. In an alternative embodiment, the support structure 122 may be formed on the third surface 116 of the transparent portion 114, and the support structure 122 and the transparent portion 114 are placed on the first surface 104 of the sensor die 102 before the epoxy resin or resin material is fully cured and hardened. At this time, the support structure 122 and the transparent portion 114 are placed on the first surface 104 of the sensor die 102 together by a pick-and-place machine. The support structure 122 is then allowed to complete curing and hardening so that the support structure 122 is coupled to the first surface 104 of the sensor die 102, and the support structure 122 couples the transparent portion 114 to the first surface 104 of the sensor die 102.

[0091] After forming the support structure 122 and coupling the transparent portion 114 to the support structure 122, a doped resin layer 504 is formed on the corresponding surface of the sensor die 102. Alternatively, the doped resin layer 504 can be formed on portions of the adhesive 502 not covered by the multiple sensor dies 102. The doped resin layer 504 can be formed using sputtering, spraying, or some other type of deposition technique for forming the doped resin layer 504. The doped resin layer 504 can have a thickness substantially equal to or greater than ~15 μm.

[0092] The doped resin layer 504 is formed to include a first opening 146 that exposes the surface of the transparent portion 114. The first opening 146 may be one of a plurality of exposed first openings 146, each of which exposes a corresponding surface of the transparent portion 114. In an alternative embodiment of the manufacturing method, a temporary protective layer may be present on the surfaces of the plurality of transparent portions 114 and fill the first opening 146. The temporary protective layer may be configured to protect the surface of the transparent portion 114 during a further step in an alternative embodiment of the manufacturing method, and to be removed in a subsequent step to form the first opening 146 and expose the surface of the transparent portion 114. The first opening 146 may correspond to, for example, Figure 6 The first opening 146 is shown.

[0093] like Figure 5 As shown, a doped resin layer 504 is used to form a doped resin in the sensor package 200. The doped resin layer 504 is doped with a non-conductive additive material (e.g., an inorganic non-conductive metal compound, which may include a metallic material).

[0094] After forming the doped resin layer 504, first, second, third, fourth, fifth, sixth, seventh, and eighth conductive layers 136, 137, 138, 139, 140, 141, 142, and 143 are formed, as follows: Figure 8B As shown in the figure. The first, third, fifth and seventh conductive layers 136, 138, 140 and 142 are formed by laser direct forming (LDS) technology, and the second, fourth, sixth and eighth layers are formed by plating technology, which is performed after the LDS technology is performed.

[0095] Forming the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142 includes selectively exposing a laser to selected portions of the doped resin layer 504, the selected portions corresponding to the locations of the first, third, fourth, and fifth layers within the sensor package 200, such as... Figure 5 As shown in the diagram. For example, the laser is guided along the surface of the doped resin layer 504 and may partially degrade the doped resin layer 504 along the area of ​​the surface of the doped resin layer 504 exposed to the laser. The laser activates the additive material within the doped resin layer 504 and converts the inorganic non-conductive metal compound from a non-conductive state to a conductive state. In other words, the inorganic non-conductive metal compound can be converted into a conductive layer, in this case, which is the first, third, fifth, and seventh conductive layers 136, 138, 140, 142. The laser can further form a micro-roughened surface (e.g., a micro-roughened surface) of the doped resin layer 504 on which the first, third, fifth, and seventh conductive layers 136, 138, 140, 142 are located. Although shown as extending continuously along the doped resin layer 504, the first, third, fifth, and seventh conductive layers 136, 138, 140, 142 can be made from multiple discontinuous portions located on the micro-roughened surface of the doped resin layer 504.

[0096] After forming first, third, fifth, and seventh conductive layers 136, 138, 140, and 142 on corresponding portions of the doped resin layer 504 by activating the inorganic non-conductive metal compound within the doped resin layer 504 with a laser, second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143 are formed by plating techniques. The plating techniques can be electroless plating, chemical plating, autocatalytic plating, or some other plating techniques used to form the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143 on corresponding layers of the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142. The thickness of the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142 is relatively small compared to the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143. The first total thickness of the first and second conductive layers 136 and 137 can be ~5 μm to 25 μm. The second total thickness of the third and fourth conductive layers 138 and 139 can be 5 μm to 25 μm. The third total thickness of the fifth and sixth conductive layers 140 and 141 can be 5 μm to 25 μm. The fourth total thickness of the seventh and eighth conductive layers 142 and 143 can be 5 μm to 25 μm.

[0097] After forming the first, second, third, fourth, fifth, sixth, seventh, and eighth conductive layers 136, 137, 138, 139, 140, 141, 142, and 143 using LDS technology and plating technology, a molding compound 506 (e.g., epoxy resin, resin, or some other suitable non-conductive material) is formed on the corresponding conductive layers 136, 137, 138, 139, 140, 141, 142, and 143 and on the doped resin layer 504, as follows. Figure 8C As shown in the diagram. Molding compound 506 fills groove 508, which in Figure 8A and Figure 8B This can be easily seen from the text. For example... Figure 8CAs shown, at least one groove extends between a transparent portion 114 and a sensor die 102. The molding compound 506 can be formed using molding tooling techniques. For example, a molding tool (e.g., a template) can be positioned over components (e.g., transparent portion 114, doped resin layer 504, conductive layer, and sensor die 102) on the first support 500, at which point the molding compound 506 is injected into the molding tool between the components such that the molding compound 506 fills the open space defined by the molding tool. After the molding compound 506 is injected, it is allowed to cure and harden, at which point the molding tool can be removed from the components on the first support 500. The molding compound 506 can form a packaged wafer 510, which includes at least two transparent portions 114, at least two sensor dies 102, at least two support structures 122, and at least two conductive layers from each of the corresponding conductive layers 136, 137, 138, 139, 140, 141, 142, and 143. Figure 8C It is easy to see from this. The molding compound 506 includes a surface 507 recessed below the respective surfaces 222, 224.

[0098] After forming the molding compound 506, such as Figure 8D The illustration utilizes flip-chip technology to remove and flip the packaged wafer 510 from the adhesive 502 and the first support 500, and then couple it to the second support 512 via a temporary adhesive 514. For example, a pick-and-place machine can pick up the packaged wafer 510, flip the packaged wafer 510, and then position the packaged wafer 510 relative to... Figure 8C The packaged wafer 510 shown is placed on the adhesive 514 with its orientation reversed.

[0099] After the packaged wafer 510 is flipped and temporarily coupled to the adhesive 514 on the second support, a polishing technique is performed to remove portions of the doped resin layer 504, the first, second, third, and fourth conductive layers 136, 137, 138, and 139, and the molding compound 506, as shown. Figure 8DAs shown in the diagram, the polishing technique can be performed using polishing tools such as grinding wheels, polishing wheels, or some other type of polishing tool. This polishing technique forms the first end surfaces 516 of the first and second conductive layers 136, 137 and the second end surfaces 518 of the third and fourth conductive layers 138, 139. The first end surfaces are the end surfaces of the first and second conductive layers 136, 137, and the second end surfaces are the surfaces of the third and fourth conductive layers 138, 139. This polishing technique forms the third end surface 520 and the fourth end surface 521 of the doped resin layer 504, and forms the surface 522 of the molding compound 506. The polishing technique also thins the sensor die 102. The first end surfaces, second end surfaces, third end surfaces, and fourth end surfaces 516, 518, 520, 521, the surface of the molding compound 506, and the second surface 106 of the sensor die 102 are substantially flush and coplanar with each other.

[0100] After completing the flip chip technology and polishing technology, a combination of patterning technology and deposition technology (such as sputtering technology, spraying technology, resist layer formation technology, or some other suitable deposition technology or combination of deposition technology for forming the stacked structure of the corresponding layers) is used to form the first non-conductive layer 524, the second non-conductive layer 526, and the conductive layers in the ninth and tenth conductive layers 208 and 210 on the packaged wafer 510 of the molding compound 506, such as... Figure 8E As shown in the diagram. The ninth conductive layer 208 is electrically connected to or coupled to the first and second conductive layers 136, 137, and the tenth conductive layer 210 is electrically connected to or coupled to the third and fourth conductive layers 138, 139. On the right-hand side of the leftmost sensor die 102, the ninth conductive layer 208 may be formed on the first end surface of the first and second conductive layers 136, 137, as shown in the diagram. Figure 8E As shown in the diagram. On the left-hand side of the leftmost sensor die 102, the tenth conductive layer 210 can be formed on the second end surface of the third and fourth conductive layers 138, 139.

[0101] After forming the first and second non-conductive layers 524, 526 and the ninth and tenth conductive layers 208, 210, a plurality of solder balls 528 are formed on the surfaces of the ninth and tenth conductive layers 208, 210 exposed from the first and second non-conductive layers 524, 526. Following solder ball formation, a dicing tool 529 dices the packaged wafer 510 into individual sensor packages within the sensor package 200, such as... Figure 5 As shown in the diagram. After performing this separation process, the individual sensor packages in sensor package 200, which are coupled to adhesive 514 on the second support, are removed from the second support. For example, the individual sensor packages in sensor package 200 can be removed from adhesive 514 on the second support by a pick-and-place machine.

[0102] Figure 9 The illustration shows the manufacturing process. Figure 6 An embodiment of the method for packaging the sensor 300 shown. (Similar to...) Figure 5 Unlike the embodiment of the method for manufacturing sensor package 200 shown, the sensor die 102 of sensor package 300 is coupled to substrate wafer 600 via adhesive 306. For example, adhesive 306 may be formed on the surface 602 of substrate wafer 600 and on one of the conductive pads 304 on the surface 602 of substrate wafer 600. Sensor die 102 can be placed on adhesive 306 using a pick-and-place machine. After coupling the die to the surface of substrate wafer 600 using adhesive 306, operations such as... Figures 8A-8C The same or similar steps shown are used to form such Figure 6 The sensor package 300 is shown. However, the substrate is replaced by temporary first and second supports, as previously described. Figures 8A-8C The diagram illustrates the discussion regarding the formation of sensor package 200. During execution... Figures 8A-8C Following the steps in the process, the packaged chip 604 is divided by the dicing tool 606 to form an independent sensor package within the sensor package 300, such as... Figure 6 As shown in the image.

[0103] Figures 10A-10D Involving manufacturing such as Figure 1 An embodiment of the method for sensor packaging 100 shown is used as follows: Figure 7 The sensor is housed in package 400 as shown. The same procedure is followed as previously discussed regarding… Figure 8A The discussed steps involve forming a support structure 122 on the corresponding sensor die 102 and coupling the transparent portion 114 to the corresponding sensor die 102 via the support structure 122. However, with Figure 8A The difference is that, in Figure 10A No doped resin layer 504 is formed on the sensor die 102, support structure 122, and transparent portion 114. Conversely, once the support structure 122 is formed on the corresponding sensor die 102, and the transparent portion 114 is coupled to the corresponding support structure 122, as... Figure 10A In the stacked configuration shown, the transparent portion 114, support structure 122, and sensor die 102 are removed from the adhesive 502 on the first support 500. The transparent portion 114, support structure 122, and sensor die 102 can be removed from the adhesive 502 by a pick-and-place machine.

[0104] In Figure 10AAfter the transparent portion 114, support structure 122, and sensor die 102 on the left side are removed from the adhesive 502 on the first support 500, doped resin 134, as a doped resin layer 134, is formed on the respective surfaces and sidewalls of the transparent portion 114, support structure 122, and sensor die 102. Doped resin 134 can be formed on these surfaces and sidewalls by spraying it onto them. For example, a pick-and-place machine can hold the transparent portion 114, support structure 122, and sensor die 102 in a first orientation, and then spray the doped resin 134 onto them while in the first orientation. After the first spraying of the doped resin 134, the pick-and-place machine can place the transparent portion 114, support structure 122, and sensor die 102 down, and then pick them up again in a second orientation different from the first orientation. When in the second orientation, the doped resin 134 can be sprayed onto the sensor die 102 to cover the transparent portion 114, the support structure 122, and the corresponding surfaces and sidewalls of the sensor die 102. In other words, multiple spraying and reorientation steps can be performed to form the doped resin 134 on the corresponding surfaces and sidewalls of the transparent portion 114, the support structure 122, and the sensor die 102. The doped resin 134 can have a substantially uniform thickness.

[0105] The doped resin 134 can be selectively sprayed onto the corresponding surfaces and sidewalls, such that the fourth surface 118 of the transparent portion 114 is formed. In an alternative embodiment, a temporary protective layer can be present on the fourth surface 118 corresponding to the location where the first opening 146 will be present. The first opening 146 can be formed by degrading the temporary protective layer. For example, the temporary protective layer can be a material that degrades upon exposure to air, water, or chemicals.

[0106] After the doped resin 134 has been formed on the corresponding surfaces and sidewalls of the transparent portion 114, the support structure 122, and the sensor die 102, the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142 can be formed using LDS technology. For example, similar to the formation of the doped resin 134, a pick-and-place machine picks up the transparent portion 114, the support structure 122, and the sensor die 102 in a first orientation, and then exposes a laser to the first corresponding portion of the doped resin 134. After the laser is exposed to the first corresponding portion of the doped resin 134, the pick-and-place machine can reorient the transparent portion 114, the support structure 122, and the sensor die 102 to a second orientation different from the first orientation. After being reoriented to the second orientation, a laser can be exposed to the second corresponding portion of the doped resin 134, which is different from the first corresponding portion of the doped resin 134. For example, exposing a laser to a first corresponding portion of the doped resin 134 can completely form the fifth and seventh conductive layers 140, 142 and partially form the first and third conductive layers 136, 138. After exposing the laser to the first corresponding portion, exposing the laser to a second corresponding portion can complete the formation of the first and third conductive layers 136, 138. In other words, multiple laser exposure steps and reorientation steps can be performed to form the first, third, fifth, and seventh conductive layers 136, 138, 140, 142 by activating the additive material in the doped resin 134.

[0107] After the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142, a plating technique is performed to form the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143 on the first, third, fifth, and seventh conductive layers 136, 138, 140, and 142. The plating technique is similar to that previously discussed... Figure 8B The plating techniques discussed are the same or similar. For the sake of simplicity and brevity, the discussion of plating techniques will not be repeated here.

[0108] After forming the first, second, third, fourth, fifth, sixth, seventh, and eighth conductive layers 136, 137, 138, 139, 140, 141, 142, and 143 on the doped resin 134, a non-conductive layer is formed on the doped resin 134 and the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143. The non-conductive layer can be formed using the spraying and reorientation steps discussed earlier regarding the formation of the doped resin 134. The second and third openings 148 and 152 in the non-conductive layer can be formed by selectively forming non-conductive layers on the doped resin 134 and the second, fourth, sixth, and eighth conductive layers 137, 139, 141, and 143. Alternatively, a temporary protective layer can exist on the fourth surface 118, the second conductive layer 137, and the fourth conductive layer 139 corresponding to the locations where the second and third openings 148 and 152 will be present. The second and third openings 148 and 152 can be formed by deteriorating the temporary protective layer. For example, a temporary protective layer can be a material that deteriorates when exposed to air, water, or chemicals.

[0109] A device may be summarized as including a die comprising a first surface, a second surface opposite to the first surface, and a first sidewall extending from the first surface to the second surface. A support structure on the first surface of the die, the support structure including a second sidewall extending away from the first surface. A transparent portion on the support structure and spaced apart from the die, the transparent portion including a third surface on the support structure, a fourth surface opposite to the third surface and facing away from the die, and a third sidewall extending from the third surface to the fourth surface. A cavity defined by the support structure, the die, and the transparent portion. Resin extending along the third sidewall, the second sidewall, the first surface, and the first sidewall.

[0110] The resin can extend along the second surface of the bare sheet and the fourth surface of the transparent portion.

[0111] The device may further include a first conductive layer extending along corresponding portions of the resin on a first surface, a first sidewall, and a second conductive layer separate from and different from the first conductive layer, the second conductive layer extending along corresponding portions of the resin on a second sidewall, a third sidewall, and a fourth surface.

[0112] A non-conductive layer can cover the first conductive layer and the second conductive layer.

[0113] The device may also include a first conductive layer extending along corresponding portions of the resin on the first sidewall and the first surface.

[0114] The first conductive layer can be covered by a non-conductive layer.

[0115] The device may also include a second conductive layer that is separate from and different from the first conductive layer, the second conductive layer extending along corresponding portions of the resin on the second and third sidewalls.

[0116] A non-conductive layer can cover the first conductive layer and the second conductive layer.

[0117] The device may also include a conductive layer extending along the first sidewall, the first surface, the second sidewall, and the third sidewall.

[0118] The resin can extend along the second and fourth surfaces, and the conductive layer can extend along the second and fourth surfaces.

[0119] The die may also include a sensor located on a first surface of the die, which is situated within the cavity.

[0120] A device may be summarized as including a support layer comprising a first surface and a second surface opposite to the first surface. A die includes a third surface located on the first surface, a fourth surface opposite to the third surface and facing away from the support layer, and a first sidewall extending from the third surface to the fourth surface. A support structure on the fourth surface of the die includes a second sidewall extending away from the fourth surface. A transparent portion on the support structure and spaced apart from the die includes an exposed surface facing away from the die and a third sidewall extending from the exposed surface toward the die. A cavity defined by the support structure, the die, and the transparent portion. Resin extending along the first sidewall, the first surface, the second sidewall, and the third sidewall.

[0121] The device may further include a first conductive layer extending along corresponding portions of the resin on the first sidewall and the fourth surface, and a second conductive layer separate from and distinct from the first conductive layer, the second conductive layer extending along corresponding portions of the resin on the second sidewall and the third sidewall.

[0122] The resin can extend along the exposed surface. The second conductive layer can extend along the corresponding portion of the resin on the exposed surface.

[0123] The device may also include a non-conductive layer covering the first conductive layer and the second conductive layer.

[0124] The device may also include a conductive layer extending along corresponding portions of the resin on the first sidewall, the fourth surface, the second sidewall, and the third sidewall.

[0125] The device may also include a non-conductive layer covering the conductive layer.

[0126] The support layer can be a passivation layer.

[0127] The support layer can be a substrate, and the resin can be on the substrate.

[0128] The device may also include a first conductive layer extending along corresponding portions of the resin on the first sidewall, the fourth surface, and the substrate.

[0129] One approach can be summarized as including a support structure coupling a transparent portion to a first surface of a first die. Doped resin is formed on a first sidewall of the die transverse to the first surface, on the first surface of the die, on a second sidewall of the support structure transverse to the first surface, and on a third sidewall of the transparent portion transverse to the first surface. A first conductive layer is formed, extending along corresponding portions of the doped resin on the first sidewall and the first surface. A non-conductive layer is formed covering the first conductive layer and the doped resin.

[0130] The method may further include forming a second conductive layer that is separate from and different from the first conductive layer by forming a second conductive layer on corresponding portions of the doped resin on the second and third sidewalls.

[0131] Forming the doped resin may further include: forming the doped resin on a second surface of the die opposite to the first surface and on a fourth surface of the transparent portion opposite to the die. Forming the first conductive layer further includes: forming a first conductive layer extending along a corresponding portion of the resin on the second surface of the die. Forming the second conductive layer further includes: forming a second conductive layer extending along a corresponding portion of the resin on the fourth surface of the transparent portion.

[0132] Forming the first conductive layer and forming the second conductive layer may include exposing the resin to a laser during the laser direct forming process.

[0133] Forming the first conductive layer may include exposing the resin to a laser during the laser direct forming process.

[0134] This method couples the support layer to the bare die.

[0135] The support layer can be a substrate.

[0136] The support layer can be a passivation layer.

[0137] The various embodiments described above can be combined to provide further embodiments. If desired, aspects of the embodiments can be modified to incorporate concepts from various patents, applications, and publications to provide even more advanced embodiments.

[0138] These and other changes can be made to the embodiments based on the detailed description above. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of the equivalents enjoyed by the claims. Therefore, the claims are not limited to this disclosure.

Claims

1. A device comprising: A bare die, the bare die including a first surface, a second surface and a first sidewall, the second surface being opposite to the first surface, and the first sidewall extending from the first surface to the second surface; A support structure, on the first surface of the bare die, the support structure includes a second sidewall extending away from the first surface; A transparent portion is located on the support structure and spaced apart from the bare sheet. The transparent portion includes a third surface, a fourth surface, and a third sidewall. The third surface is located on the support structure. The fourth surface is opposite to the third surface and away from the bare sheet. The third sidewall extends from the third surface to the fourth surface. The cavity is defined by the supporting structure, the bare sheet, and the transparent portion; as well as The resin extends along the third sidewall, the second sidewall, the first surface, and the first sidewall, and has a first thickness that is less than the second thickness of the bare sheet and less than the third thickness of the transparent portion.

2. The device of claim 1, wherein the resin extends along the second surface of the bare die and the fourth surface of the transparent portion.

3. The device according to claim 2, further comprising: A first conductive layer extends along corresponding portions of the resin on the first surface, the first sidewall, and the second surface; as well as A second conductive layer, separate from and different from the first conductive layer, extends along the resin on corresponding portions of the second sidewall, the third sidewall, and the fourth surface.

4. The device of claim 3, wherein the non-conductive layer covers the first conductive layer and the second conductive layer.

5. The device according to claim 1, further comprising: A first conductive layer extends along the resin at corresponding portions on the first sidewall and the first surface.

6. The device of claim 5, wherein the first conductive layer is covered by a non-conductive layer.

7. The device according to claim 6, further comprising: A second conductive layer, which is separate from and different from the first conductive layer, extends along the resin at corresponding portions on the second and third sidewalls.

8. The device of claim 7, wherein the non-conductive layer covers the first conductive layer and the second conductive layer.

9. The device according to claim 1, further comprising: A conductive layer extends along the first sidewall, the first surface, the second sidewall, and the third sidewall.

10. The device according to claim 9, wherein: The resin extends along the second surface and the fourth surface; and The conductive layer extends along the second surface and the fourth surface.

11. The device of claim 1, wherein the die further comprises: A sensor, located on the first surface of the bare die, within the cavity.

12. A device comprising: A support layer, the support layer including a first surface and a second surface, the second surface being opposite to the first surface; A bare die, the bare die including a third surface, a fourth surface and a first sidewall, the third surface being on the first surface, the fourth surface being opposite to the third surface and away from the support layer, and the first sidewall extending from the third surface to the fourth surface; A support structure, on the fourth surface of the bare die, the support structure includes a second sidewall extending away from the fourth surface; A transparent portion, on the support structure and spaced apart from the bare sheet, includes an exposed surface and a third sidewall, the exposed surface facing away from the bare sheet, and the third sidewall extending from the exposed surface toward the bare sheet; The cavity is defined by the supporting structure, the bare sheet, and the transparent portion; as well as The resin extends along the first sidewall, the first surface, the second sidewall, and the third sidewall, and the resin has a first thickness that is less than the second thickness of the bare sheet and less than the third thickness of the transparent portion.

13. The device according to claim 12, further comprising: A first conductive layer extends along the resin at corresponding portions on the first sidewall and the fourth surface; as well as A second conductive layer, separate from and different from the first conductive layer, extends along the resin at corresponding portions on the second and third sidewalls.

14. The device according to claim 13, wherein: The resin extends along the exposed surface; and The second conductive layer extends along the corresponding portion of the resin on the exposed surface.

15. The device according to claim 13, further comprising: A non-conductive layer covers the first conductive layer and the second conductive layer.

16. The device according to claim 12, further comprising: A conductive layer extends along corresponding portions of the resin on the first sidewall, the fourth surface, the second sidewall, and the third sidewall.

17. The device according to claim 16, further comprising: A non-conductive layer covers the conductive layer.

18. The device of claim 12, wherein the support layer is a passivation layer.

19. The device according to claim 12, wherein: The support layer is a substrate; and The resin is on the substrate.

20. The device of claim 19, further comprising: The first conductive layer extends along the corresponding portions of the resin on the first sidewall, the fourth surface, and the substrate.

21. A method comprising: A support structure that couples the transparent portion to the first surface of the first bare die; Doped resin is formed on a first sidewall of the bare die transverse to the first surface, on the first surface of the bare die, on a second sidewall of the support structure transverse to the first surface, and on a third sidewall of the transparent portion transverse to the first surface. The doped resin has a first thickness, which is less than a second thickness of the bare die and less than a third thickness of the transparent portion. A first conductive layer is formed, which extends along the corresponding portions of the doped resin on the first sidewall and the first surface; as well as A non-conductive layer is formed covering the first conductive layer and the doped resin.

22. The method of claim 21, further comprising: A second conductive layer, separate from and different from the first conductive layer, is formed by forming a second conductive layer on corresponding portions of the doped resin on the second sidewall and on corresponding portions of the third sidewall.

23. The method according to claim 22, wherein: The formation of the doped resin further includes forming the doped resin on a second surface of the bare die opposite to the first surface and on a fourth surface of the transparent portion opposite to the bare die; Forming the first conductive layer also includes forming the first conductive layer extending along a corresponding portion of the resin on the second surface of the bare die. as well as Forming the second conductive layer also includes forming a second conductive layer extending along a corresponding portion of the resin on the fourth surface of the transparent portion.

24. The method of claim 23, wherein forming the first conductive layer and forming the second conductive layer comprises: The resin is exposed to a laser during the laser direct forming process.

25. The method of claim 21, wherein forming the first conductive layer includes exposing the resin to a laser during a laser direct forming process.

26. The method of claim 21, further comprising coupling a support layer to the bare die.

27. The method of claim 26, wherein the support layer is a substrate.

28. The method of claim 26, wherein the support layer is a passivation layer.

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