An electrostatic particle collection system and method with self-cleaning functionality

Abstract

The application provides an electrostatic particle collecting system and method with self-cleaning function, which comprises a medium-pressure gate valve, an electrostatic adsorption net, a nitrogen pipeline, an electrostatic generator, a pressure gauge, a vacuum generator and a controller; the electrostatic adsorption net is horizontally installed in a channel between a chamber body and an APC valve; the medium-pressure gate valve is installed on the bottom of the chamber body close to the electrostatic adsorption net and is used for switching the communication state between the chamber body and the channel according to the control instruction of the controller; the electrostatic generator is connected with the electrostatic adsorption net and provides different levels of electrostatic voltage for the electrostatic adsorption net; the pressure gauge is installed in the channel and is used for detecting the air pressure value in the channel in real time and feeding back the detected air pressure value to the controller; and the vacuum generator and the nitrogen pipeline are communicated to the channel respectively. The application can effectively eliminate the suspended particles and effectively improve the chip quality, thereby improving the yield of chip production and bringing greater profits to chip production enterprises.

Description

Technical Field

[0001] This invention belongs to the field of chamber cleaning technology, specifically relating to an electrostatic particle collection system and method with self-cleaning function. Background Technology

[0002] The current chip industry is increasingly moving towards smaller linewidths and higher densities. Simultaneously, the production process introduces more and more various materials. These semiconductor-related materials generate significant byproducts during manufacturing. These byproducts often end up in the test chamber and remain suspended within it. Under high vacuum conditions, these particles exhibit irregular Brownian motion, making rapid removal difficult using only molecular pumps. These particles contribute to defect maps during chip manufacturing, such as… Figure 1 As shown.

[0003] Meanwhile, as the materials used in the process become increasingly complex, some metallic byproducts and non-metallic particles are difficult to clean using plasma gases. Some plasma cleaning processes require high power and specialized gases, and are also time-consuming, resulting in additional energy and material consumption. Furthermore, the cleaning steps themselves cause wear and tear on the chamber components, shortening their lifespan. This leads to shorter maintenance cycles, increasing the cost of semiconductor device production and reducing manufacturers' profit margins.

[0004] The presence of these byproducts leads to a large number of defective products during semiconductor device manufacturing. Some particles settle on the wafer surface during the process, interfering with etching and causing poor etching, resulting in wafer malfunction. Figure 2 As shown, some metal particles may even cause interconnections in the wafer, thereby affecting the wafer yield, seriously affecting the reliability of the chip's function, and causing chip manufacturers to suffer related economic losses.

[0005] During semiconductor manufacturing, some particles may adhere to the sidewalls of the wafer chamber, while others may remain suspended within the chamber. Generally, byproducts attached to the sidewalls are difficult to remove, so they have a relatively small impact on wafer quality. The particles that have a greater impact on wafer production are those that are suspended. Because of their irregular particle movement in the high vacuum, these particles can easily move to the wafer surface, leading to chip defects and affecting both chip quality and yield. Summary of the Invention

[0006] Technical problem solved: This invention proposes an electrostatic particle collection system and method with self-cleaning function. As the linewidth of semiconductor devices gradually shrinks, it can effectively eliminate suspended particles, effectively improve chip quality, increase chip production yield, and bring greater profits to chip manufacturers.

[0007] Technical solution:

[0008] An electrostatic particle collection system with self-cleaning function includes a medium-pressure gate valve, an electrostatic adsorption net, a nitrogen pipeline, an electrostatic generator, a pressure gauge, a vacuum generator, and a controller; the medium-pressure gate valve, the nitrogen pipeline, the electrostatic generator, the pressure gauge, and the vacuum generator are all connected to the controller;

[0009] The electrostatic adsorption net is horizontally installed in the channel between the chamber body and the APC valve. A medium-pressure gate valve is installed on the bottom of the chamber body near the electrostatic adsorption net. The medium-pressure gate valve is used to switch the connection state between the chamber body and the channel according to the control command of the controller. The electrostatic generator is connected to the electrostatic adsorption net and provides different levels of electrostatic voltage to the electrostatic adsorption net. The pressure gauge is installed in the channel to detect the air pressure value in the channel in real time and feeds back the detected air pressure value to the controller. The vacuum generator and the nitrogen pipeline are respectively connected to the channel.

[0010] After the semiconductor fabrication process is completed, the controller opens the medium-pressure gate valve and closes the APC valve, switching the chamber body and the channel to a connected state. An electrostatic generator continuously applies a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, causing the suspended particles in the chamber body to be adsorbed onto the electrostatic adsorption net under the action of the electric field.

[0011] When the positive electrostatic voltage is applied for a period of time that reaches the first preset time, the medium-pressure gate valve is closed to isolate the chamber body and the channel. The electrostatic generator is used to continuously apply the reverse electrostatic voltage to the electrostatic adsorption net. At the same time, the nitrogen pipeline is opened so that some particles on the electrostatic adsorption net are detached from the electrostatic adsorption net under the dual action of reverse voltage and gas pressure and are suspended in the channel.

[0012] When the reverse electrostatic voltage is applied for a duration of the second preset duration and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed, the vacuum generator is started, and the remaining suspended particles on the electrostatic adsorption net are removed from the electrostatic adsorption net. At the same time, all particles suspended in the channel are discharged from the channel along with the nitrogen until the air pressure in the channel reaches the first vacuum pressure. The APC valve is opened, and the vacuum exhaust system of the chamber body is used to further remove the suspended particles in the channel until the air pressure in the channel reaches the second vacuum pressure. The APC valve is then closed, the vacuum exhaust system is shut down, the electrostatic generator is turned off, and the medium-pressure gate valve is opened.

[0013] Furthermore, the first preset duration and the second preset duration are related to the type and quantity of suspended particles generated during the semiconductor fabrication process.

[0014] Furthermore, the electrostatic voltage applied by the electrostatic generator to the electrostatic adsorption net ranges from -5000V to 5000V.

[0015] Furthermore, the barometer is a Pirani vacuum gauge.

[0016] Furthermore, a vibration motor is installed on the electrostatic adsorption net, and the vibration motor is connected to a controller to vibrate the electrostatic adsorption net.

[0017] Furthermore, the electrostatic adsorption mesh is made of silver, copper, or stainless steel.

[0018] Furthermore, the surface of the electrostatic adsorption mesh is anodized to form an insulating and corrosion-resistant protective layer.

[0019] An electrostatic particle collection method with self-cleaning function, wherein the electrostatic particle collection method is performed based on the electrostatic particle collection system as described above;

[0020] The electrostatic particle collection method includes the following steps:

[0021] S1. After the semiconductor fabrication process is completed, the type and quantity of suspended particulate matter in the chamber body are estimated based on the semiconductor fabrication process parameters. The electrostatic voltage value, the first preset duration and the second preset duration are calculated based on the estimation results.

[0022] S2, open the medium-pressure gate valve and close the APC valve to switch the chamber body and the channel to a connected state. Use an electrostatic generator to continuously apply a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, so that the suspended particles in the chamber body are adsorbed onto the electrostatic adsorption net under the action of the electric field.

[0023] S3, when the duration of the positive electrostatic voltage application reaches the first preset duration, close the medium-pressure gate valve to isolate the chamber body and the channel, use an electrostatic generator to continuously apply a reverse electrostatic voltage to the electrostatic adsorption net, and at the same time open the nitrogen pipeline, so that some particles on the electrostatic adsorption net detach from the electrostatic adsorption net under the dual action of reverse voltage and gas pressure and suspend in the channel;

[0024] S4. When the reverse electrostatic voltage is applied for a period of time that reaches the second preset time and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed and the vacuum generator is started to remove the remaining suspended particles on the electrostatic adsorption net from the electrostatic adsorption net. At the same time, all the particles suspended in the channel are discharged from the channel with the nitrogen until the air pressure in the channel reaches the first vacuum air pressure.

[0025] S5, open the APC valve, use the vacuum exhaust system of the chamber body to further remove suspended particles in the channel until the air pressure in the channel reaches the second vacuum air pressure, close the APC valve, close the vacuum exhaust system, close the electrostatic generator, and open the medium pressure gate valve.

[0026] Furthermore, when the electrostatic generator is started, the vibration motor is started simultaneously, causing the electrostatic adsorption net to vibrate at a preset vibration amplitude.

[0027] Furthermore, the first preset duration and the second preset duration are related to the type and quantity of suspended particles generated during the semiconductor fabrication process.

[0028] Beneficial effects:

[0029] First, the electrostatic particle collection system and method with self-cleaning function proposed in this invention can effectively eliminate suspended particles, improve chip quality, increase chip production yield, and bring greater profits to chip manufacturers, given the current trend of increasingly smaller linewidths in semiconductor devices.

[0030] Secondly, the electrostatic particle collection system and method with self-cleaning function proposed in this invention has an electrostatic adsorption net with self-cleaning function, which can remove particulate matter on the electrostatic adsorption net by means of vibration, applying reverse voltage, increasing air pressure and using purging to increase viscous flow in part or all of the means, so as to ensure the cleaning effect.

[0031] Third, the gas flows in one direction between the chamber and the channel, which can effectively prevent particles in the channel from flowing back into the chamber. Attached Figure Description

[0032] Figure 1 This is a schematic diagram illustrating one form of particulate matter falling onto the wafer surface.

[0033] Figure 2 This is a schematic diagram illustrating how metal particles cause short circuits in the etched electrodes.

[0034] Figure 3 This is a schematic diagram of a traditional chamber structure.

[0035] Figure 4 This is a schematic diagram of a traditional chamber structure filled with suspended particulate matter after semiconductor fabrication.

[0036] Figure 5 This is a schematic diagram of the structure of the electrostatic particle collection system (SSEPCS system) with self-cleaning function according to an embodiment of the present invention.

[0037] Figure 6 This is a schematic diagram of the improved chamber structure after semiconductor fabrication process.

[0038] Figure 7 This is a schematic diagram illustrating the principle of removing suspended particles using electrostatic adsorption.

[0039] Figure 8 This is a schematic diagram illustrating the self-cleaning principle of the SSEPCS system.

[0040] Figure 9 This is a schematic diagram illustrating the re-cleaning principle of the SSEPCS system.

[0041] Figure 10 This is a schematic diagram of the improved chamber structure after self-cleaning.

[0042] Figure 11 This is a flowchart of an electrostatic particle collection method with self-cleaning function according to an embodiment of the present invention. Detailed Implementation

[0043] The following embodiments are provided to enable those skilled in the art to more fully understand the present invention, but do not limit the invention in any way.

[0044] Figure 3 This is a schematic diagram of a traditional chamber structure. During the manufacturing process, byproducts from the traditional chamber typically adhere to the chamber lining, and some particles remain suspended within the chamber space, such as… Figure 4 As shown. These suspended particles are prone to appearing on the wafer surface during wafer manufacturing processes, causing chip defects.

[0045] To remove these suspended particles, this embodiment introduces a self-cleaning electrostatic particle collection system (SSEPCS). See also... Figure 5 The electrostatic particle collection system includes a medium-pressure gate valve, an electrostatic adsorption net, a nitrogen pipeline, an electrostatic generator, a pressure gauge, a vacuum generator, and a controller; the medium-pressure gate valve, the nitrogen pipeline, the electrostatic generator, the pressure gauge, and the vacuum generator are all connected to the controller.

[0046] The electrostatic adsorption net is horizontally installed in the channel between the chamber body and the APC valve. A medium-pressure gate valve is installed on the bottom of the chamber body near the electrostatic adsorption net. The medium-pressure gate valve is used to switch the connection state between the chamber body and the channel according to the control command of the controller. The electrostatic generator is connected to the electrostatic adsorption net and provides different levels of electrostatic voltage to the electrostatic adsorption net. The pressure gauge is installed in the channel to detect the air pressure value in the channel in real time and feed the detected air pressure value back to the controller. The vacuum generator and nitrogen pipeline are respectively connected to the channel.

[0047] After the semiconductor fabrication process is completed, the controller opens the medium-pressure gate valve and closes the APC valve, switching the chamber body and channel into a connected state. An electrostatic generator continuously applies a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, causing suspended particles in the chamber body to be adsorbed onto the net under the influence of the electric field. When the positive electrostatic voltage application time reaches a first preset duration, the medium-pressure gate valve is closed, isolating the chamber body and channel. The electrostatic generator then continuously applies a reverse electrostatic voltage to the electrostatic adsorption net, while simultaneously opening the nitrogen pipeline. This causes some particles on the electrostatic adsorption net to detach under the combined action of the reverse voltage and gas pressure, and remain suspended in the channel. When the reverse electrostatic voltage is applied for a duration of the second preset duration and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed, the vacuum generator is started, and the remaining suspended particles on the electrostatic adsorption net are removed from the electrostatic adsorption net. At the same time, all particles suspended in the channel are discharged from the channel along with the nitrogen until the air pressure in the channel reaches the first vacuum pressure. The APC valve is opened, and the vacuum exhaust system of the chamber body is used to further remove the suspended particles in the channel until the air pressure in the channel reaches the second vacuum pressure. The APC valve is then closed, the vacuum exhaust system is shut down, the electrostatic generator is turned off, and the medium-pressure gate valve is opened.

[0048] Compared to the traditional chamber, the improved chamber adds the following related components:

[0049] 1. Medium-pressure gate valve, whose main function is to isolate the SSEPCS system from the process chamber.

[0050] 2. Electrostatic adsorption mesh, its main function is to provide high voltage electrostatics to adsorb suspended particles.

[0051] 3. N2 piping, used for venting the SSEPCS system.

[0052] 4. HV emission is used to provide static electricity to the electrostatic adsorption net. The electrostatic generator can provide different levels of electrostatic voltage (-1000V, -2000V, -3000V, -4000V, -5000V, +1000V, +2000V, +3000V, +4000V, +5000V...).

[0053] 5. Pirani Guage: Used to monitor pressure changes in the SSEPCS system.

[0054] Even in improved chambers with SSEPCS systems, a certain amount of suspended particles remain within the chamber after the semiconductor fabrication process, such as... Figure 6 As shown

[0055] At this point, the HV emission is activated, and a high-voltage electrostatic charge is applied to the electrostatic adsorption mesh. This high voltage can be adjusted according to actual needs. Once a high voltage is applied to the electrostatic adsorption mesh, the suspended particles within the chamber will be affected by the electric field and aggregate on the mesh, significantly reducing the number of particles in the chamber. Figure 7 As shown. After a sufficient number of particles have been adsorbed onto the electrostatic adsorption mesh, the adsorbed particles are removed by increasing the SSEPCS pressure and adjusting the electrostatic adsorption mesh to a reverse voltage. The specific steps are as follows: 1. Close the Gate valve; 2. Close the APC; 3. Close the Fast / slow vacuum valve; 4. Open the N2 flow; 5. Monitor the Pirani gauge until the SSEPCS pressure reaches atmospheric pressure. Figure 8 As shown. Due to the increased pressure and the addition of reverse voltage, particles accumulated on the electrostatic adsorption mesh will diffuse into the SSEPCS, and the electrostatic adsorption mesh will return to cleanliness. At this time, open the Slowvacuum valve, and then open the Fast vacuum valve. The particles in the SSEPCS system will then be carried away by the vacuum, thus preventing the continuous presence of suspended particles in the chamber and ensuring the continued cleanliness of the electrostatic adsorption mesh. Figure 9 As shown. After the SSEPCS pressure reaches a high vacuum, close the Slow / Fast Vacuum valve, open the APC, and open the Gate valve. The chamber returns to its normal state, and suspended particles in the chamber are effectively removed, as shown. Figure 10 As shown.

[0056] The SSEPCS system in this embodiment primarily employs the principle of electrostatic particle adsorption to collect suspended particles within the chamber. After collecting the suspended particles, the SSEPCS system effectively detaches the particles by converting the electrostatic voltage and increasing the pressure within the SSEPCS chamber. Following particle detachment, a rough vacuum is used to create a viscous flow within the SSEPCS, effectively carrying away related byproduct particles and achieving a clean environment within the chamber. To monitor the SSEPCS pressure, a Pirani gauge is used to ensure the chamber environment remains unaffected, enabling particle removal without compromising the chamber environment. Once the SSEPCS reaches a high vacuum, the gate valve remains closed, the APC is opened, and a TMP (Transient Pump) is used to further remove particles from the SSEPCS, achieving a double removal force for suspended particles. To avoid chemical corrosion and ensure effective conductivity, electrostatic meshes need to be made of materials with good conductivity, such as Ag, Cu, or stainless steel. To prevent potential chemical corrosion, the surface of the electrostatic mesh needs to be anodized to form an insulating and corrosion-resistant surface, thereby ensuring the long-term effectiveness of SSEPCS.

[0057] See Figure 11 This embodiment also discloses an electrostatic particle collection method with self-cleaning function, which is based on the electrostatic particle collection system described above.

[0058] The electrostatic particle collection method includes the following steps:

[0059] S1. After the semiconductor fabrication process is completed, the type and quantity of suspended particulate matter in the chamber body are estimated based on the semiconductor fabrication process parameters. The electrostatic voltage value, the first preset duration and the second preset duration are calculated based on the estimation results.

[0060] S2, open the medium-pressure gate valve and close the APC valve to switch the chamber body and the channel to a connected state. Use an electrostatic generator to continuously apply a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, so that the suspended particles in the chamber body are adsorbed onto the electrostatic adsorption net under the action of the electric field.

[0061] S3, when the duration of the positive electrostatic voltage application reaches the first preset duration, close the medium-pressure gate valve to isolate the chamber body and the channel, use an electrostatic generator to continuously apply a reverse electrostatic voltage to the electrostatic adsorption net, and at the same time open the nitrogen pipeline, so that some particles on the electrostatic adsorption net detach from the electrostatic adsorption net under the dual action of reverse voltage and gas pressure and suspend in the channel;

[0062] S4. When the reverse electrostatic voltage is applied for a period of time that reaches the second preset time and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed and the vacuum generator is started to remove the remaining suspended particles on the electrostatic adsorption net from the electrostatic adsorption net. At the same time, all the particles suspended in the channel are discharged from the channel with the nitrogen until the air pressure in the channel reaches the first vacuum air pressure.

[0063] S5, open the APC valve, use the vacuum exhaust system of the chamber body to further remove suspended particles in the channel until the air pressure in the channel reaches the second vacuum air pressure, close the APC valve, close the vacuum exhaust system, close the electrostatic generator, and open the medium pressure gate valve.

[0064] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.

Claims

1. An electrostatic particle collection system with self-cleaning function, characterized in that, The electrostatic particle collection system includes a medium-pressure gate valve, an electrostatic adsorption net, a nitrogen pipeline, an electrostatic generator, a pressure gauge, a vacuum generator, and a controller; the medium-pressure gate valve, the nitrogen pipeline, the electrostatic generator, the pressure gauge, and the vacuum generator are all connected to the controller; The electrostatic adsorption net is horizontally installed in the channel between the chamber body and the APC valve. A medium-pressure gate valve is installed on the bottom of the chamber body near the electrostatic adsorption net. The medium-pressure gate valve is used to switch the connection state between the chamber body and the channel according to the control command of the controller. The electrostatic generator is connected to the electrostatic adsorption net and provides different levels of electrostatic voltage to the electrostatic adsorption net. The pressure gauge is installed in the channel to detect the air pressure value in the channel in real time and feeds back the detected air pressure value to the controller. The vacuum generator and the nitrogen pipeline are respectively connected to the channel. After the semiconductor fabrication process is completed, the controller opens the medium-pressure gate valve and closes the APC valve, switching the chamber body and the channel to a connected state. An electrostatic generator continuously applies a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, causing the suspended particles in the chamber body to be adsorbed onto the electrostatic adsorption net under the action of the electric field. When the positive electrostatic voltage is applied for a period of time that reaches the first preset time, the medium-pressure gate valve is closed to isolate the chamber body and the channel. The electrostatic generator is used to continuously apply the reverse electrostatic voltage to the electrostatic adsorption net. At the same time, the nitrogen pipeline is opened so that some particles on the electrostatic adsorption net are detached from the electrostatic adsorption net under the dual action of reverse voltage and gas pressure and are suspended in the channel. When the reverse electrostatic voltage is applied for a duration of the second preset duration and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed, the vacuum generator is started, and the remaining suspended particles on the electrostatic adsorption net are removed from the electrostatic adsorption net. At the same time, all particles suspended in the channel are discharged from the channel along with the nitrogen until the air pressure in the channel reaches the first vacuum pressure. The APC valve is opened, and the vacuum exhaust system of the chamber body is used to further remove the suspended particles in the channel until the air pressure in the channel reaches the second vacuum pressure. The APC valve is then closed, the vacuum exhaust system is shut down, the electrostatic generator is turned off, and the medium-pressure gate valve is opened.

2. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, The first preset duration and the second preset duration are related to the type and quantity of suspended particles generated during the semiconductor fabrication process.

3. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, The electrostatic voltage applied by the electrostatic generator to the electrostatic adsorption net ranges from -5000V to 5000V.

4. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, The pressure gauge used is a Pirani vacuum gauge.

5. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, A vibration motor is installed on the electrostatic adsorption net, and the vibration motor is connected to a controller to vibrate the electrostatic adsorption net.

6. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, The electrostatic adsorption mesh is made of silver, copper, or stainless steel.

7. The electrostatic particle collection system with self-cleaning function according to claim 1, characterized in that, The surface of the electrostatic adsorption mesh is anodized to form an insulating and corrosion-resistant protective layer.

8. A method for collecting electrostatic particles with a self-cleaning function, based on the electrostatic particle collection system according to any one of claims 1-7, characterized in that, Includes the following steps: S1. After the semiconductor fabrication process is completed, the type and quantity of suspended particulate matter in the chamber body are estimated based on the semiconductor fabrication process parameters. The electrostatic voltage value, the first preset duration and the second preset duration are calculated based on the estimation results. S2, open the medium-pressure gate valve and close the APC valve to switch the chamber body and the channel to a connected state. Use an electrostatic generator to continuously apply a positive electrostatic voltage adapted to the semiconductor fabrication process to the electrostatic adsorption net, so that the suspended particles in the chamber body are adsorbed onto the electrostatic adsorption net under the action of the electric field. S3, when the duration of the positive electrostatic voltage application reaches the first preset duration, close the medium-pressure gate valve to isolate the chamber body and the channel, use an electrostatic generator to continuously apply a reverse electrostatic voltage to the electrostatic adsorption net, and at the same time open the nitrogen pipeline, so that some particles on the electrostatic adsorption net detach from the electrostatic adsorption net under the dual action of reverse voltage and gas pressure and suspend in the channel. S4. When the reverse electrostatic voltage is applied for a period of time that reaches the second preset time and the air pressure in the channel reaches atmospheric pressure, the nitrogen channel is closed and the vacuum generator is started to allow the remaining suspended particles on the electrostatic adsorption net to detach from the electrostatic adsorption net. At the same time, all the particles suspended in the channel are discharged from the channel along with the nitrogen until the air pressure in the channel reaches the first vacuum air pressure. S5, open the APC valve, use the vacuum exhaust system of the chamber body to further remove suspended particles in the channel until the air pressure in the channel reaches the second vacuum air pressure, close the APC valve, close the vacuum exhaust system, close the electrostatic generator, and open the medium pressure gate valve.

9. The electrostatic particle collection method with self-cleaning function according to claim 8, characterized in that, The electrostatic adsorption net is equipped with a vibration motor connected to the controller, which is used to vibrate the electrostatic adsorption net. When the electrostatic generator is started, the vibration motor is started synchronously, so that the electrostatic adsorption net vibrates at a preset vibration amplitude.

10. The electrostatic particle collection method with self-cleaning function according to claim 8, characterized in that, The first preset duration and the second preset duration are related to the type and quantity of suspended particles generated during the semiconductor fabrication process.

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