High frequency circuit structure and method of manufacturing the same

Abstract

A high frequency circuit structure and a manufacturing method thereof are disclosed. The high frequency circuit structure includes a substrate, a conductive body and at least one insulating body. The conductive body extends in a direction. The insulating body is sandwiched between the substrate and the conductive body and extends in the direction.

Description

Technical Field

[0001] This invention relates to a high-frequency circuit structure and a method for manufacturing the same high-frequency circuit structure. Background Technology

[0002] As people's living standards improve, their demand for electronic devices is also increasing. Correspondingly, in order to meet the ever-increasing demands of consumers, manufacturers are also committed to improving electronic devices.

[0003] However, in addition to improving the performance of electronic devices, for example, how to reduce the impedance of current flowing through electronic devices to avoid signal attenuation is undoubtedly an important issue of great concern to the industry. Summary of the Invention

[0004] One of the objectives of this invention is to provide a high-frequency circuit structure that can effectively reduce impedance, thereby facilitating the flow of high-frequency alternating current.

[0005] According to one embodiment of the present invention, a high-frequency circuit structure includes a substrate, a conductor, and at least one insulator. The conductor extends in a certain direction. The insulator is sandwiched between the substrate and the conductor and extends in the aforementioned direction.

[0006] In one or more embodiments of the present invention, the conductor includes a first top and two first walls. An insulator is sandwiched between a substrate and the first top, and the two first walls are connected between the substrate and the first top, with the insulator connected between the two first walls.

[0007] In one or more embodiments of the present invention, the insulator comprises a plurality of sub-insulators, each extending along the aforementioned direction and spaced apart from the others. The conductor further comprises at least one partition. The partition is connected between the substrate and the first top, and between the sub-insulators.

[0008] In one or more embodiments of the present invention, the insulator includes a second top and two second walls. The second top is connected to the first top and is located away from the substrate, while the two second walls are connected between the substrate and the second top, and the two second walls are separate from each other.

[0009] In one or more embodiments of the present invention, the above-described direction is at least partially spiral.

[0010] In one or more embodiments of the present invention, the conductor described above is configured to allow high-frequency alternating current to pass through, wherein the frequency of the high-frequency alternating current is greater than 1 million hertz (1 MHz).

[0011] In one or more embodiments of the present invention, the above-described high-frequency circuit structure further includes a passivation layer. This passivation layer is disposed between the substrate and the conductor and insulator.

[0012] In one or more embodiments of the present invention, the high-frequency circuit structure described above further includes a seed layer. This seed layer is disposed between the conductor and the insulator together with the substrate.

[0013] One of the objectives of this invention is to provide a method for manufacturing a high-frequency circuit structure that can effectively reduce impedance, thereby facilitating the flow of high-frequency alternating current.

[0014] According to one embodiment of the present invention, a method for manufacturing a high-frequency circuit structure includes the following steps: providing a substrate; disposing of a plurality of insulators on the substrate, wherein the insulators extend along a certain direction; and connecting the substrate with at least one conductor, wherein the conductor covers and connects the insulators.

[0015] In one or more embodiments of the present invention, the above-described manufacturing method further includes: etching a conductive material to form a plurality of grooves, the grooves being located between two adjacent insulators and away from the insulators, and the grooves extending along the direction described above.

[0016] In one or more embodiments of the present invention, the manufacturing method further includes: firstly, setting a seed layer on the substrate and an insulator before connecting the conductor to the substrate; and setting a plurality of photoresist bodies on the seed layer, the photoresist bodies extending along the aforementioned direction, the insulator being located between two adjacent photoresist bodies, and the seed layer and photoresist bodies disposed on the insulator being separated from each other. The step of connecting the substrate with the conductor includes: setting the conductor on the seed layer between the photoresist bodies by electroplating; and etching the photoresist bodies and the seed layer located between the photoresist bodies and the substrate.

[0017] In one or more embodiments of the present invention, the step of providing an insulator on a substrate includes: providing a plurality of photoresist layers on the substrate, wherein the photoresist layers extend along the aforementioned direction; connecting the substrate with a plurality of second passivation layers and respectively covering the corresponding photoresist layers, wherein the second passivation layers extend along the aforementioned direction; and removing the photoresist layers to form a space within each second passivation layer.

[0018] In one or more embodiments of the present invention, the step of setting an insulator on a substrate includes: setting a photoresist layer on the substrate, the photoresist layer extending along the aforementioned direction; connecting the substrate with a seed layer to form a gantry structure to cover the photoresist layer; and removing the photoresist layer to form a space within the gantry structure. The manufacturing method further includes: setting a plurality of photoresist bodies on the substrate, each photoresist body extending along the aforementioned direction, the gantry structure being located between the photoresist bodies and separated from them. The step of connecting the substrate with a conductor includes: setting a conductor between the photoresist bodies by electroplating; and etching the photoresist bodies.

[0019] In one or more embodiments of the present invention, the above-described direction is at least partially spiral.

[0020] The above-described embodiments of the present invention have at least the following advantages:

[0021] (1) Since the insulator is sandwiched between the first passivation layer and the sub-conductor and is covered by the sub-conductor, the cross-section of the sub-conductor is gantry-shaped. This effectively increases the perimeter length of the sub-conductor's cross-section, thereby effectively reducing impedance and facilitating electron flow. In practical applications, the sub-conductor can be configured to allow high-frequency alternating current to pass through, and the frequency of the high-frequency alternating current can be, for example, greater than 1 million hertz (1 MHz).

[0022] (2) A high-frequency circuit structure with a spiral subconductor can be used as a basic unit for assembly into electronic devices.

[0023] (3) The manufacturing method of high-frequency circuit structure can be based on the actual situation, such as the thickness range of the high-frequency circuit structure, and different microstrip fabrication processes can be adopted, including physical vapor deposition, chemical vapor deposition, electroplating or printing, etc. Attached Figure Description

[0024] Figure 1 This is a flowchart of a method for manufacturing a high-frequency circuit structure according to an embodiment of the present invention;

[0025] Figures 2-5 for Figure 1 A schematic diagram of the manufacturing method of the high-frequency circuit structure;

[0026] Figure 6 for Figure 5 A schematic diagram of electron flow in a high-frequency circuit structure;

[0027] Figure 7 The above diagram shows the high-frequency circuit structure according to an embodiment of the present invention;

[0028] Figure 8 This is a cross-sectional schematic diagram of a high-frequency circuit structure according to another embodiment of the present invention;

[0029] Figure 9 A flowchart illustrating a method for manufacturing a high-frequency circuit structure according to another embodiment of the present invention;

[0030] Figures 10-12 for Figure 9 A schematic diagram of the manufacturing method of the high-frequency circuit structure;

[0031] Figure 13 A flowchart illustrating a method for manufacturing a high-frequency circuit structure according to another embodiment of the present invention;

[0032] Figures 14-17 for Figure 13 A schematic diagram of the manufacturing method of the high-frequency circuit structure;

[0033] Figure 18 This is a cross-sectional schematic diagram of a high-frequency circuit structure according to another embodiment of the present invention;

[0034] Figure 19 This is a cross-sectional schematic diagram of a high-frequency circuit structure according to another embodiment of the present invention;

[0035] Figures 20-21 This is a schematic diagram of a method for manufacturing a high-frequency circuit structure according to another embodiment of the present invention.

[0036] Symbol Explanation

[0037] 100: High-frequency circuit structure

[0038] 110:Substrate

[0039] 120: Conductor

[0040] 120': Sub-conductor

[0041] 121: First Top

[0042] 122: First wall section

[0043] 123: Divider

[0044] 130: Insulator

[0045] 130': Sub-insulator

[0046] 131: Second Top

[0047] 132: Second wall section

[0048] 140: First passivation layer

[0049] 150: Seed layer

[0050] 160: Second passivation layer

[0051] 170: Photoresist

[0052] 180: Photoresist layer

[0053] 200: Electronics

[0054] 500: Manufacturing Method

[0055] 510~560, 521~523, 531~532: Steps

[0056] D: Direction

[0057] G: Groove

[0058] S: Space Detailed Implementation

[0059] The following describes several embodiments of the present invention with reference to the accompanying drawings. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not essential. Furthermore, for the sake of simplicity, some conventional structures and elements will be shown in the drawings in a simple schematic manner, and in all drawings, the same reference numerals will be used to denote the same or similar elements. And, where feasible, features of different embodiments may be applied interchangeably.

[0060] Unless otherwise defined, all terms used herein (including technical and scientific terms) have their ordinary meanings, which are understandable to those skilled in the art. Furthermore, the definitions of the foregoing terms in commonly used dictionaries should be interpreted in the context of this specification as having the meaning consistent with the relevant field of this invention. Unless specifically defined, these terms will not be construed as having idealized or overly formal meanings.

[0061] Please refer to Figure 1 . Figure 1 This is a flowchart illustrating a method 500 for manufacturing a high-frequency circuit structure according to an embodiment of the present invention. In this embodiment, as... Figure 1 As shown, a method 500 for manufacturing a high-frequency circuit structure includes the following steps (it should be understood that, unless otherwise specified, the order of the steps mentioned in some embodiments can be adjusted as needed, and they may even be performed simultaneously or partially simultaneously):

[0062] (1) Provide substrate 110 (step 510). For example Figure 2As shown, depending on the actual situation, a first passivation layer 140 may also be provided on the substrate 110. The first passivation layer 140 can protect the substrate 110 to prevent it from being subjected to undesirable effects in subsequent manufacturing processes. However, depending on the circumstances, the first passivation layer 140 may be omitted from the substrate 110. For ease of understanding, this specification uses the description of a first passivation layer 140 being provided on the substrate 110. In addition, in practical applications, the substrate 110 may be glass or other sheet materials.

[0063] (2) A plurality of insulators 130 are disposed on the substrate 110, and the insulators 130 extend along direction D (step 520). More specifically, such as Figure 3 As shown, a plurality of insulators 130 are disposed on the first passivation layer 140 on the substrate 110, and the insulators 130 are separated from each other and extend along direction D, that is, the insulators 130 extend along the direction D. Figure 3 Extending in the direction.

[0064] (3) Connect the substrate 110 with at least one conductor 120, and cover and connect the insulator 130 with the conductor 120 (step 530). Figure 4 As shown, the conductor 120 covers and connects to a plurality of insulators 130, and the conductor 120 is also connected to the substrate 110. In practice, for example, the user may choose to place the conductor 120 on the substrate 110 and the insulators 130 by physical vapor deposition or chemical vapor deposition, but the present invention is not limited thereto.

[0065] (4) Etch the conductor 120 to form a plurality of grooves G, the grooves G being located between and away from two adjacent insulators 130, and the grooves G extending along direction D (step 540). Figure 5 As shown, after etching, the conductor 120 is divided into multiple sub-conductors 120', each sub-conductor 120' covering its corresponding insulator 130. The groove G is located between two adjacent sub-conductors 120', that is, the groove G is located between two adjacent insulators 130 and away from the insulator 130. Furthermore, the sub-conductors 120' and the groove G extend along direction D, and the fabrication of the high-frequency circuit structure 100 is completed.

[0066] Please refer to Figure 6 . Figure 6 For illustration Figure 5 An enlarged schematic diagram of the sub-conductor 120' is shown, illustrating the electron flow. In this embodiment, as... Figure 6As shown, the sub-conductor 120' includes a first top 121 and two first wall portions 122. An insulator 130 is sandwiched between a first passivation layer 140 on the substrate 110 and the first top 121 of the sub-conductor 120', while the two first wall portions 122 of the sub-conductor 120' are connected between the first passivation layer 140 and the first top 121 on the substrate 110, and the insulator 130 is connected between the two first wall portions 122.

[0067] like Figure 6 As shown, when electrons 200 flow through the subconductor 120' in direction D, they actually flow through the perimeter of the cross-section of the subconductor 120', meaning they tend to flow on the surface of the subconductor 120'. Since the insulator 130 is sandwiched between the first passivation layer 140 and the subconductor 120' and is covered by the subconductor 120', the cross-section of the subconductor 120' is gantry-shaped. This effectively increases the perimeter length of the subconductor 120'', thereby effectively reducing impedance and facilitating the flow of electrons 200. Thus, in practical applications, the subconductor 120' can be configured to allow high-frequency alternating current to pass through, and the frequency of the high-frequency alternating current can be, for example, greater than 1 million hertz (1 MHz).

[0068] Please refer to Figure 7 . Figure 7 The above diagram illustrates a high-frequency circuit structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 7 As shown, direction D is at least partially helical. That is, the sub-conductor 120' and the insulator 130 encased therein extend along the helical direction D. For example, a high-frequency circuit structure 100 having a helical sub-conductor 120', such as... Figure 7 As shown, it can be used as a basic unit for assembly into electronic devices.

[0069] Please refer to Figure 8 . Figure 8 This is a cross-sectional schematic diagram illustrating a high-frequency circuit structure 100 according to another embodiment of the present invention. In this embodiment, the insulator 130 includes a plurality of sub-insulators 130'. Figure 8 As shown, each sub-insulator 130' extends along direction D and is separated from each other. Furthermore, the sub-conductor 120' also includes at least one partition 123, which is connected between the first passivation layer 140 and the first top 121 on the substrate 110, and is connected between the sub-insulators 130'.

[0070] Please refer to Figure 9 . Figure 9 This is a flowchart illustrating a method 500 for manufacturing a high-frequency circuit structure according to another embodiment of the present invention. In this embodiment, as... Figure 9As shown, the step of setting the insulator 130 on the substrate 110 (i.e., step 520) includes (it should be understood that, in some embodiments, the order of the steps mentioned can be adjusted as needed, unless otherwise specified, and they may even be performed simultaneously or partially simultaneously):

[0071] (2.1) A plurality of photoresist layers 180 are formed on the substrate 110, and the photoresist layers 180 extend along direction D (step 521). Figure 10 As shown, a photoresist layer 180 is disposed on the first passivation layer 140 on the substrate 110, and the photoresist layer 180 extends along direction D, that is, the photoresist layer 180 extends along the direction D. Figure 10 Extending in the direction.

[0072] (2.2) A plurality of second passivation layers 160 are connected to the substrate 110 and respectively cover the corresponding photoresist layer 180, wherein the second passivation layers 160 extend along direction D (step 522). Furthermore, as... Figure 10 As shown, the second passivation layer 160 forms a gantry structure to cover the photoresist layer 180, and the second passivation layer 160 is connected to the first passivation layer 140 on the substrate 110.

[0073] (2.3) Remove the photoresist layer 180 to form a space S within each of the second passivation layers 160 (step 523). Figure 11 As shown, the photoresist layer 180 has been removed, and a space S is formed within the second passivation layer 160. In other words, the second passivation layer 160, which forms the gantry structure and has the space S, defines the aforementioned insulator 130. More specifically, the insulator 130, i.e., the second passivation layer 160 that forms the gantry structure and has the space S, includes a second top 131 and two second walls 132. The two second walls 132 are connected between the first passivation layer 140 and the second top 131 on the substrate 110, and the two second walls 132 are separated from each other, with air filling the space S between the two second walls 132. Furthermore, as... Figure 12 As shown, the sub-conductor 120' also forms a gantry structure to cover the second passivation layer 160, and the sub-conductor 120' is connected to the first passivation layer 140 on the substrate 110. More specifically, the second wall portion 132 of the insulator 130 is connected to the first wall portion 122 of the sub-conductor 120', and the second top portion 131 of the insulator 130 is connected to the first top portion 121 of the sub-conductor 120' and is located away from the substrate 110.

[0074] Please refer to Figure 13 . Figure 13 This is a flowchart illustrating a method 500 for manufacturing a high-frequency circuit structure according to another embodiment of the present invention. In this embodiment, as... Figure 13As shown, manufacturing method 500 also includes (it should be understood that, unless otherwise specified, the order of the steps mentioned in some embodiments can be adjusted as needed, and they can even be performed simultaneously or partially simultaneously):

[0075] (5) Before the conductor 120 is connected to the substrate 110, a seed layer 150 is first set on the substrate 110 and the insulator 130 (step 550). Figure 14 As shown, after the insulator 130 is disposed on the first passivation layer 140 on the substrate 110, a seed layer 150 is disposed on the insulator 130 and the first passivation layer 140 to facilitate subsequent electroplating processes.

[0076] (6) A plurality of photoresist bodies 170 are disposed on the seed layer 150, the photoresist bodies 170 extending along direction D respectively, and the insulator 130 is located between two adjacent photoresist bodies 170. The seed layer 150 disposed on the insulator 130 is separated from the photoresist bodies 170 (step 560). Figure 15 As shown, the photoresist 170 is disposed between the insulators 130 and extends along direction D. Furthermore, the seed layer 150 disposed on the side of the insulator 130 is separated from the photoresist 170, that is, the seed layer 150 disposed on the side of the insulator 130 and the photoresist 170 do not contact each other.

[0077] Furthermore, in this embodiment, such as Figure 13 As shown, the step of connecting the substrate 110 with the conductor 120 (i.e., step 530) includes:

[0078] (3.1) The conductor 120 is deposited on the seed layer 150 between the photoresist bodies 170 by electroplating (step 531). Figure 16 As shown, the sub-conductor 120' is formed by electroplating between the photoresist bodies 170, and the sub-conductor 120' covers the seed layer 150 between the photoresist bodies 170.

[0079] (3.2) Etch the photoresist 170 and the seed layer 150 located between the photoresist 170 and the substrate 110 (step 532). Figure 17 As shown, after etching, the photoresist 170 and the seed layer 150 originally located between the photoresist 170 and the substrate 110 have been removed, while the sub-conductors 120' are separated from each other and extend along direction D respectively, and the sub-conductors 120' cover the corresponding insulator 130.

[0080] Depending on the actual situation, in the case where the insulator 130 is defined by the second passivation layer 160 forming the gantry structure and having space S, as described above, Figure 18As shown, the seed layer 150 also forms a gantry structure and is covered by the second passivation layer 160, while the subconductor 120' also forms a gantry structure and is covered by the seed layer 150.

[0081] In other implementations, such as Figure 19 As shown, when the insulator 130 is defined as a seed layer 150 that forms a gantry structure and has a space S, the sub-conductor 120' also forms a gantry structure and covers the seed layer 150.

[0082] Please refer to Figures 20-21 . Figures 20-21 This is a schematic diagram illustrating a method 500 for manufacturing a high-frequency circuit structure according to another embodiment of the present invention. In this embodiment, there are multiple conductors 120, and the conductors 120 are printed onto a substrate 110 and each is covered with a corresponding insulator 130. Figure 20 As shown, the insulator 130 is first disposed on the substrate 110. Then, as... Figure 21 As shown, the conductor 120 is printed onto the substrate 110 and the corresponding insulator 130 according to the pattern of the template (not shown), and the fabrication of the high-frequency circuit structure 100 is completed.

[0083] In summary, the high-frequency circuit structure manufacturing method 500 can employ different microstrip fabrication processes, including physical vapor deposition, chemical vapor deposition, electroplating, or printing, depending on the actual conditions, such as the thickness range of the high-frequency circuit structure 100.

[0084] In summary, the technical solutions disclosed in the above embodiments of the present invention have at least the following advantages:

[0085] (1) Since the insulator is sandwiched between the first passivation layer and the sub-conductor and is covered by the sub-conductor, the cross-section of the sub-conductor is gantry-shaped. This effectively increases the perimeter length of the sub-conductor's cross-section, thereby effectively reducing impedance and facilitating electron flow. In practical applications, the sub-conductor can be configured to allow high-frequency alternating current to pass through, and the frequency of the high-frequency alternating current can be, for example, greater than 1 million hertz (1 MHz).

[0086] (2) A high-frequency circuit structure with a spiral subconductor can be used as a basic unit for assembly into electronic devices.

[0087] (3) The manufacturing method of high-frequency circuit structure can be based on the actual situation, such as the thickness range of the high-frequency circuit structure, and different microstrip fabrication processes can be adopted, including physical vapor deposition, chemical vapor deposition, electroplating or printing, etc.

[0088] Although the present invention has been disclosed in conjunction with the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A high-frequency circuit structure, comprising: substrate; A conductor, comprising a plurality of sub-conductors, each sub-conductor extending in a direction; and Multiple insulators are sandwiched between the substrate and the conductor, with each insulator extending along the direction, and each sub-conductor covering the corresponding insulator. Multiple grooves, each groove being located between and away from two adjacent insulators, and each groove extending in that direction.

2. The high-frequency circuit structure as described in claim 1, wherein the conductor comprises: A first top, wherein the insulator is sandwiched between the substrate and the first top; and Two first walls are connected between the substrate and the first top, and the insulator is connected between the two first walls.

3. The high-frequency circuit structure as described in claim 2, wherein the insulator comprises a plurality of sub-insulators, the plurality of sub-insulators extending along the direction and spaced apart from each other, and the conductor further comprises: At least one partition is connected between the substrate and the first top, and between the plurality of sub-insulators.

4. The high-frequency circuit structure as described in claim 2, wherein the insulator comprises: The second top, connected to the first top and located away from the substrate; and Two second walls are connected between the substrate and the second top, and the two second walls are separate from each other.

5. The high-frequency circuit structure as claimed in claim 1, wherein the direction is at least partially spiral.

6. The high-frequency circuit structure of claim 1, wherein the conductor is configured to allow high-frequency alternating current to pass through, the frequency of the high-frequency alternating current being greater than 1 million hertz.

7. The high-frequency circuit structure as described in claim 1, further comprising: A passivation layer is disposed between the substrate and the conductor and the insulator.

8. The high-frequency circuit structure as described in claim 1, further comprising: A seed layer is disposed between the conductor and the insulator together with the substrate.

9. The high-frequency circuit structure of claim 1, wherein each groove is located between two adjacent sub-conductors.

10. A method for manufacturing a high-frequency circuit structure, comprising: Provide substrate; A plurality of insulators are disposed on the substrate, each insulator extending in a certain direction; and The substrate is connected to at least one conductor, and the conductor covers and connects the plurality of insulators. The manufacturing method further includes: The conductor is etched to form a plurality of grooves, each groove being located between and away from two adjacent insulators, and each groove extending in that direction.

11. The manufacturing method of claim 10, further comprising: Before the conductor is connected to the substrate, a seed layer is first formed on the substrate and the plurality of insulators; and Multiple photoresist particles are disposed on the seed layer, each extending along the specified direction. Each insulator is located between two adjacent photoresist particles, and the seed layer disposed on each insulator is separated from the two adjacent photoresist particles. Connecting the substrate to the conductor includes: The conductor is deposited on the seed layer between the plurality of photoresist bodies by electroplating; and The plurality of photoresist bodies and the seed layer located between the plurality of photoresist bodies and the substrate are etched.

12. The manufacturing method of claim 10, wherein providing the plurality of insulators on the substrate comprises: Multiple photoresist layers are disposed on the substrate, and each photoresist layer extends along the direction; The substrate is connected by multiple second passivation layers and each of them is covered with a corresponding photoresist layer, with each second passivation layer extending along the direction; as well as Remove the multiple photoresist layers to create spaces within each second passivation layer.

13. The manufacturing method of claim 10, wherein providing the plurality of insulators on the substrate comprises: A photoresist layer is disposed on the substrate, and the photoresist layer extends along the direction; The substrate is connected by a seed layer to form a gantry structure to cover the photoresist layer; and Remove the photoresist layer to create space within the gantry structure. The method also includes: Multiple photoresist bodies are disposed on the substrate, and the multiple photoresist bodies extend along the direction respectively. The gantry structure is located between the photoresist bodies and is separated from them. Connecting the substrate to the conductor includes: The conductor is disposed between the plurality of photoresist bodies by electroplating; and Etch the multiple photoresist bodies.

14. The manufacturing method of claim 10, wherein the direction is at least partially helical.

15. The manufacturing method as described in claim 10, wherein, Etching the conductor also forms multiple sub-conductors, each extending along the direction and covering a corresponding insulator, wherein each groove is located between two adjacent sub-conductors.

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