Full-color quantum dot conversion device and manufacturing method thereof, display chip module

Abstract

The application discloses a full-color quantum dot conversion device and a manufacturing method and a display chip module thereof, quantum dot hole positions corresponding to sub-pixel unit positions of a chip are made on a transparent substrate, quantum dot light color conversion objects are filled in the quantum dot hole positions, and a quantum dot protection layer is deposited, so that the conversion device is independently made on the transparent substrate, compared with a conversion layer processed on a substrate layer in the prior art, the full-color quantum dot conversion device is inverted and bonded in alignment with the integrated single-color Micro LED module base, and the manufacturing efficiency can be improved. Moreover, the conversion device uses a combined structure of quantum dots-quantum dot protection layer-metal reflection layer-metal isolation layer, light intensity can be improved and light color crosstalk can be eliminated when full-color Micro LED display is performed.

Description

[0001] This case is a divisional application of the invention patent with the application date of January 28, 2022, the application number of 202210104851.5, and the name of "Manufacturing method of color Micro LED display chip module". TECHNICAL FIELD

[0002] The present application relates to the technical field of semiconductor technology, in particular to a full-color quantum dot conversion device, a manufacturing method thereof, and a display chip module. BACKGROUND

[0003] There are two schemes for existing full-color Micro LED display: the first is RGB single large-scale transfer, which transfers a large number of independent RGB LED chips into the same substrate; the second is based on single-color Micro LED, which uses quantum dots for conversion on the chip.

[0004] However, in the existing full-color display scheme, the efficiency of the first large-scale transfer method cannot be improved, and the size of the single pixel is limited by the transfer device; the display effect of the second method based on single-color Micro LED combined with quantum dots is often affected by the problems of substrate peeling and color crosstalk. SUMMARY

[0005] The technical problem to be solved by the present application is to provide a full-color quantum dot conversion device, a manufacturing method thereof, and a display chip module, which can solve the problems of substrate peeling difficulty and light color crosstalk.

[0006] To solve the above technical problems, the technical scheme adopted by the present application is:

[0007] A manufacturing method of a full-color quantum dot conversion device, comprising the steps of:

[0008] Preparation of Micro LED chips on a substrate, flip-chip bonding of the chips on a driving substrate after grinding and cutting, substrate peeling of the chips, and obtaining of an integrated single-color Micro LED module substrate;

[0009] Manufacturing of quantum dot hole positions corresponding to the sub-pixel unit positions of the chips on a transparent substrate, filling of quantum dot light color conversion materials in the quantum dot hole positions and deposition of a quantum dot protection layer, preparation of a metal reflection layer and a metal spacing layer in turn at positions between the quantum dot hole positions above the quantum dot protection layer, and obtaining of a full-color quantum dot conversion device;

[0010] Inverting the full-color quantum dot conversion device and aligning and bonding it with the integrated single-color Micro LED module substrate, and obtaining a color Micro LED display chip module.

[0011] The beneficial effects of the present application are that the Micro LED chip is prepared on the substrate, the chip is flip-chip bonded after being ground and cut, and the substrate is peeled off, so that compared with the full-face peeling of the chip wafer in the prior art, the peeling difficulty is small and the yield is high. The quantum dot hole site corresponding to the position of the sub-pixel unit of the chip is made on the transparent substrate, the quantum dot light color conversion object is filled in the quantum dot hole site, and the quantum dot protection layer is deposited, so that the conversion device is independently made on the transparent substrate. Compared with the conversion layer processed on the substrate layer in the prior art, the full-color quantum dot conversion device is inverted and aligned and bonded with the integrated monochromatic Micro LED module substrate, which can improve the manufacturing efficiency. And the conversion device uses the combination structure of quantum dot-quantum dot protection layer-metal reflection layer-metal isolation layer, which can improve the light intensity and eliminate the light color crosstalk when full-color Micro LED display. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 A flow chart of a manufacturing method of a full-color quantum dot conversion device according to an embodiment of the present application;

[0013] Figure 2 A structural schematic diagram of an integrated GaN-based monochromatic Micro LED chip;

[0014] Figure 3 A schematic diagram of a color Micro LED display chip module structure;

[0015] Figure 4 A schematic diagram of a traditional full-color integrated Micro LED conversion structure;

[0016] REFERENCE NUMERALS:

[0017] 1, substrate; 2, single sub-pixel unit of gallium nitride integrated chip; 3, sub-pixel pad; 4, pixel composed of 2*2 sub-pixel units; 5, driving substrate; 6, bonding material; 7, integrated monochromatic Micro LED module substrate; 8, transparent adhesive; 9, intermediate insulating cover layer; 10, metal spacing layer; 11, metal reflection layer; 12, quantum dot protection layer; 13, green quantum dot light color conversion object; 14, transparent substrate; 15, red quantum dot light color conversion object; 16, light isolation layer; 17, quantum dot. DETAILED DESCRIPTION

[0018] To explain the technical content, the purposes and effects of the present application in detail, the following will be described in conjunction with the embodiments and the accompanying drawings.

[0019] Please refer to Figures 1 to 3 The embodiment of the present application provides a manufacturing method of a color Micro LED display chip module, which comprises the following steps:

[0020] Preparation of Micro LED chips on a substrate, flip-chip bonding of the chips on a driving substrate after grinding and cutting of the chips, substrate peeling of the chips, and obtaining of an integrated monochromatic Micro LED module substrate;

[0021] Manufacture of quantum dot hole sites corresponding to the positions of sub-pixel units of the chips on a transparent substrate, filling of quantum dot light color conversion objects in the quantum dot hole sites and deposition of a quantum dot protection layer, and preparation of a metal reflection layer and a metal spacing layer in turn above the quantum dot protection layer at positions between the quantum dot hole sites, and obtaining of a full-color quantum dot conversion device;

[0022] Inversion of the full-color quantum dot conversion device and alignment and adhesion of the full-color quantum dot conversion device to the integrated monochromatic Micro LED module substrate, and obtaining of a color Micro LED display chip module.

[0023] As can be known from the above description, the beneficial effects of the present application are that Micro LED chips are prepared on a substrate, the chips are flip-chip bonded on a driving substrate after grinding and cutting of the chips, and the chips are subjected to substrate peeling, so that, compared with the full-face peeling of chip wafers in the prior art, the peeling difficulty is small and the yield is high. Quantum dot hole sites corresponding to the positions of sub-pixel units of the chips are manufactured on a transparent substrate, quantum dot light color conversion objects are filled in the quantum dot hole sites, and a quantum dot protection layer is deposited, so that the conversion device is independently manufactured on the transparent substrate, compared with the machining of a conversion layer on a substrate layer in the prior art, the full-color quantum dot conversion device is inverted and aligned and adhered to the integrated monochromatic Micro LED module substrate, and the manufacturing efficiency can be improved. Furthermore, the conversion device uses a combination structure of quantum dots-quantum dot protection layer-metal reflection layer-metal spacing layer, and the light intensity can be improved and the light color crosstalk can be eliminated during full-color Micro LED display.

[0024] Further, the preparation of Micro LED chips on a substrate includes:

[0025] Growth of a gallium nitride-based epitaxial layer on a substrate, and manufacture of a single sub-pixel unit and a sub-pixel pad of a gallium nitride integrated chip based on the gallium nitride-based epitaxial layer.

[0026] As can be known from the above description, the single sub-pixel unit and the sub-pixel pad of the chip are manufactured based on the gallium nitride-based epitaxial layer, which facilitates subsequent welding of the chip and a driving device based on the sub-pixel pad.

[0027] Further, the preparation of Micro LED chips on a substrate includes:

[0028] Four matrix-arranged sub-pixel units in the Micro LED chip are taken as one pixel, and the color ratio of the sub-pixels in the pixel is blue: red: green = 1: 1: 2.

[0029] It can be known from the above description that four matrix-arranged sub-pixel units are taken as one pixel, and the color ratio of the sub-pixels is blue: red: green = 1: 1: 2, which facilitates subsequent color Micro LED.

[0030] Further, the flip-chip bonding of the chip after the grinding cutting includes:

[0031] After the grinding cutting of the chip, the ground and cut chip is flip-chipped.

[0032] The preset pad interface of the flip-chip is combined with the driving substrate by a welding material.

[0033] It can be known from the above description that the chip is welded on the driving substrate after cutting, which facilitates subsequent substrate peeling, and therefore the process of subsequent substrate peeling is simple, the yield is high, and the removal of the substrate can effectively eliminate light crosstalk phenomenon and improve the overall display effect of the display chip.

[0034] Further, the quantum dot hole position corresponding to the position of the sub-pixel unit of the chip on the transparent substrate includes:

[0035] A pattern corresponding to the position of the sub-pixel unit of the chip is made on the transparent substrate using photolithography, and a quantum dot hole position is obtained by etching.

[0036] It can be known from the above description that the quantum dot hole position corresponding to the position of the sub-pixel unit of the chip is etched on the transparent substrate, which can correspond to the integrated substrate chip pixel, and the luminescent excitation quantum dot of the integrated substrate chip is used.

[0037] Further, filling quantum dot light color conversion substances in the quantum dot hole position and depositing a quantum dot protection layer include:

[0038] According to the color ratio of the sub-pixels, quantum dot light color conversion substances of two colors other than a first color among three primary colors are spin-coated in the quantum dot hole position, and the first color is the color of the epitaxial layer of the Micro LED chip.

[0039] Excess quantum dot light color conversion substances are removed using a developing solution.

[0040] An atomic layer deposition method is used to deposit an aluminum oxide quantum dot protection layer above the quantum dot light color conversion substances.

[0041] From the above description, it can be seen that after the quantum dots are made on the transparent substrate, the aluminum oxide quantum dot protection layer is deposited using the atomic layer deposition method, which can improve the service life of the quantum dots.

[0042] Further, the metal reflection layer and the metal spacing layer are sequentially prepared at positions between the quantum dot holes above the quantum dot protection layer include:

[0043] The metal reflection layer is covered on the quantum dot protection layer, and the metal reflection layer is opened at the position of the center of the quantum dot hole.

[0044] The metal spacing layer is prepared at positions between the quantum dot holes above the metal reflection layer.

[0045] From the above description, the metal reflection layer is covered on the quantum dot protection layer, and the reflection layer is opened at the position of the center of the quantum dot. The quantum dots are excited by the light emitted from the substrate chip in the hole, and the metal reflection layer isolates the crosstalk outside the hole. The metal isolation layer is made on the metal reflection layer, which can further prevent side crosstalk.

[0046] Further, after the metal reflection layer and the metal spacing layer are sequentially prepared at positions between the quantum dot holes above the quantum dot protection layer include:

[0047] The intermediate insulating cover layer is uniformly covered above the metal reflection layer and the metal spacing layer.

[0048] The transparent adhesive is filled in the groove of the intermediate insulating cover layer.

[0049] From the above description, the intermediate insulating cover layer is deposited on the metal reflection layer and the metal isolation layer. This layer can protect the metal and prevent the metal from causing short circuit of the integrated substrate chip.

[0050] Further, the full-color quantum dot conversion device is inverted and aligned and bonded with the integrated monochromatic Micro LED module substrate include:

[0051] The full-color quantum dot conversion device is inverted, and the position of the full-color quantum dot conversion device coated with the transparent adhesive is aligned and bonded with the sub-pixel unit of the integrated monochromatic Micro LED module substrate.

[0052] From the above description, the transparent insulating adhesive is used to connect the part leaked after the light color conversion layer and the integrated substrate chip peel off the substrate, so the conversion device and the chip module are independently prepared, which can improve the processing yield of the conversion device and the manufacturing yield of the module chip.

[0053] The manufacturing method of the full-color quantum dot conversion device can improve light intensity, eliminate light color crosstalk, improve the insulation capacity of the module, improve the heat dissipation capacity of the module, and improve the service life of the quantum dots.

[0054] Embodiment one

[0055] Please refer to Figures 1 to 3 A manufacturing method of a color Micro LED display chip module includes the following steps:

[0056] S1, preparing a Micro LED chip on a substrate, flip-chip bonding the chip on a driving substrate after grinding and cutting the chip, and peeling off the substrate of the chip to obtain an integrated monochromatic Micro LED module substrate.

[0057] S11, growing a gallium nitride-based epitaxial layer on a substrate, and manufacturing a single sub-pixel unit and a sub-pixel pad of a gallium nitride integrated chip based on the gallium nitride-based epitaxial layer.

[0058] Specifically, in the embodiment, the integrated GaN-based monochromatic Micro LED chip includes a substrate, a single sub-pixel of a gallium nitride (GaN) integrated chip, and a sub-pixel pad.

[0059] The four matrix-arranged sub-pixel units in the Micro LED chip are used as a pixel, and the color ratio of the sub-pixels in the pixel is blue:red:green = 1:1:2.

[0060] Specifically, the substrate, the single sub-pixel of the GaN integrated chip manufactured based on the GaN epitaxial layer, the pad on the sub-pixel, and the pre-set 2*2 total of four sub-pixels can constitute a monochromatic substrate of a full-color pixel.

[0061] In the embodiment, after the chip is prepared on the substrate, the arrangement of 1 blue, 1 red, and 2 green is reserved for each pixel with four units. The chip is ground and cut.

[0062] S12, after the chip is ground and cut, the ground and cut chip is flip-chipped, the pre-set pad interface of the flip-chipped chip is combined with the driving substrate through the welding material, and an integrated monochromatic Micro LED module substrate is obtained.

[0063] Specifically, after the chip is prepared, it is flip-chip bonded to the driving substrate, and the chip is combined with the driving substrate through the pre-reserved pad interface and the welding material. Then, the substrate of the single chip is peeled off on the substrate to leak out the GaN. The prepared output is called an integrated monochromatic Micro LED module substrate.

[0064] In order to eliminate the crosstalk problem, the substrate layer of the chip must be peeled off, but the existing wafer peeling method has too high a requirement for the flatness of the wafer, and the yield of the laser peeling process is low. The single display chip peeling method used in the embodiment solves the problem of wafer peeling.

[0065] S2, making quantum dot hole positions corresponding to the sub-pixel unit positions of the chip on the transparent substrate, filling quantum dot light color conversion substances in the quantum dot hole positions and depositing a quantum dot protection layer, and sequentially preparing a metal reflection layer and a metal spacing layer at positions between the quantum dot hole positions above the quantum dot protection layer to obtain a full-color quantum dot conversion device.

[0066] S21, using photolithography to make patterns corresponding to the sub-pixel unit positions of the chip on the transparent substrate, and obtaining quantum dot hole positions by etching.

[0067] Specifically, in terms of light color conversion, a scheme of preparing a quantum dot conversion layer on the GaN surface after the chip is peeled off is designed. The preparation of the quantum dot conversion layer is separately processed, and a transparent substrate such as glass, acrylic, and a polymer film is used to make quantum dot hole positions on the substrate.

[0068] S22, according to the color proportion of the sub-pixels, spin-coating quantum dot light color conversion substances of two colors other than a first color among the three primary colors in the quantum dot hole positions, the first color being the color of the epitaxial layer of the Micro LED chip, using a developing solution to remove excess quantum dot light color conversion substances, and using an atomic layer deposition method to deposit an aluminum oxide quantum dot protection layer above the quantum dot light color conversion substances.

[0069] In the embodiment, the light color conversion substance can be quantum dot glue or small particle fluorescent powder, and the color of the epitaxial layer of the Micro LED chip is blue. Quantum dot hole positions of red and green quantum dot light color conversion substances are prepared on the substrate according to a preset 2*2 division. These quantum dot light color conversion substances use blue or near-blue excitation, and the excitation wavelength range is 450-475 nm.

[0070] Specifically, the red and green quantum dots are sequentially prepared. First, spin-coat red quantum dot glue according to the hole positions, use exposure to make patterns, use a developing solution to remove unnecessary quantum dots, and use an atomic layer deposition (ALD) method to deposit an aluminum oxide protection layer. Then, spin-coat green quantum dot glue according to the hole positions, use exposure to make patterns, use a developing solution to remove unnecessary quantum dots, and use an ALD method to deposit an aluminum oxide protection layer.

[0071] S23, covering a metal reflective layer on the quantum dot protective layer, and opening a hole in the center of the quantum dot hole site of the metal reflective layer.

[0072] Specifically, in the present embodiment, a metal reflective layer is prepared using a metal with reflectivity, such as aluminum or platinum, to cover the quantum dot protective layer, and a hole is opened in the center of the quantum dot hole site of the metal reflective layer. The quantum dot is excited by light emitted from the substrate chip in the hole, and the metal reflective layer isolates the crosstalk outside the hole. That is, the metal reflective layer enhances the light intensity and isolates the light crosstalk.

[0073] S24, preparing a metal spacing layer on the metal reflective layer and between the quantum dot hole sites.

[0074] Specifically, a metal spacing layer is prepared on the metal reflective layer and between the quantum dot hole sites, which prevents light crosstalk.

[0075] S25, uniformly covering an intermediate insulating cover layer on the metal reflective layer and the metal spacing layer, and filling a transparent adhesive in the groove of the intermediate insulating cover layer.

[0076] Specifically, an intermediate insulating cover layer is prepared on the above-mentioned chip, which can be silicon oxide or aluminum oxide. A transparent insulating adhesive is filled in the groove of the intermediate insulating cover layer to connect the chip after the release substrate is peeled off. The prepared product is called a full-color quantum dot conversion device.

[0077] S3, aligning and bonding the full-color quantum dot conversion device after being inverted with the integrated monochromatic Micro LED module substrate to obtain a color Micro LED display chip module.

[0078] The prepared full-color quantum dot conversion device is inverted and connected to the GaN reserved surface of the integrated monochromatic Micro LED module substrate. The positioning of the connection is based on the alignment of the blue through hole coated with transparent adhesive on the full-color quantum dot conversion device with the blue reserved electrode position of the sub-pixel unit of the integrated monochromatic Micro LED module substrate. The transparent adhesive of the light color conversion module is combined with the GaN surface of the integrated GaN-based monochromatic Micro LED chip after the release substrate is peeled off, and is dried to obtain a color Micro LED display chip module.

[0079] Please refer to Figure 4Compared with a traditional full-color integrated Micro LED conversion structure, the substrate is removed in the embodiment, and the removal method is to first cut the chip and then weld it on the driving substrate, and then perform substrate peeling; a brand-new structure of a light color conversion module is designed, which is independently processed outside the chip and then combined on the chip, rather than being processed based on the substrate layer of the chip. Moreover, the light color conversion module of the embodiment uses a combination structure of quantum dots-protection layer-reflection layer-isolation layer-insulating layer, which can improve the light intensity, eliminate the light color crosstalk, improve the insulation capability of the module, improve the heat dissipation capability of the module, and improve the quantum dot life during full-color Micro LED display.

[0080] Embodiment two

[0081] The difference between the embodiment and the embodiment one is that a specific application scenario is provided.

[0082] Step 1, using a GaN-based epitaxial wafer grown on a sapphire substrate by MOCVD (metal organic chemical vapor deposition) equipment as a substrate, using a photoetching machine and photoetching glue and other photoetching facilities and materials to perform pattern transfer according to a designed chip pattern, and through etching the GaN surface to produce an N-type layer, evaporating a conductive layer, depositing an insulating layer, and evaporating a metal electrode, an integrated Micro LED chip wafer is produced.

[0083] Step 2, the wafer is ground, polished, and cut to produce an integrated Micro LED chip, as shown in Figure 2 .

[0084] Step 3, the chip is welded to the driving substrate through a welding material, the welding surface of the chip is the chip electrode, and after welding, the chip electrode surface is below and combined with the driving substrate, and the substrate surface is above.

[0085] Step 4, the substrate of the chip is peeled off using a laser on the substrate surface of the combination. After processing, a driving substrate, a welding material, and an integrated single-color Micro LED module substrate are combined together. At this time, the GaN surface exposed after peeling is upward, as shown in Figure 3 .

[0086] Step 5, a pattern is produced on a transparent substrate using photoetching, and ICP is used for etching to produce the position of the quantum dots.

[0087] Step 6, according to the designed full-color pixel position, i.e. Figure 3 , the position of the quantum dots, a red quantum dot is prepared using photoetching, and a protection layer is produced on the surface thereof using ALD.

[0088] Step 7, according to the designed full-color pixel position, i.e. Figure 3The green quantum dots are prepared by using photolithography, and a protective layer is made on the surface of the quantum dots by using ALD.

[0089] Step 8, making a metal reflection layer: first, glue coating and photolithography are performed on the quantum dot protective layer, then metal aluminum copper alloy is evaporated by using metal evaporation, and then metal stripping is performed to leave metal aluminum copper alloy at the predetermined position. This layer is metal-free at the center position of the quantum dots, that is, it is transparent, and it is metal at other positions. The metal forms a reflection enhancement quantum dot on the quantum dot surface to enhance the light intensity, and a layer of quantum dots without quantum dots prevents other light, avoiding light crosstalk.

[0090] Step 9, making a metal isolation layer on the metal reflection layer: first, glue coating and photolithography are performed, then metal aluminum copper alloy is evaporated by using metal evaporation, and then metal stripping is performed to leave metal aluminum copper alloy at the predetermined position. The metal remaining in this layer is mainly used to prevent light crosstalk between pixels, and it plays the role of a light blocking wall.

[0091] Step 10, continuing to deposit an intermediate insulating cover layer on the metal isolation layer prepared above: aluminum oxide is deposited by using ALD as the material of the cover layer.

[0092] Step 11, spraying a transparent adhesive in the recess at the position of the quantum dots prepared above.

[0093] Step 12, combining the surface sprayed with the adhesive in step 11 with the GaN surface leaked after the chip prepared in step 4 is stripped, and the whole combination is a color Micro LED display chip module.

[0094] In summary, the application provides a full-color quantum dot conversion device and a manufacturing method thereof and a display chip module, a Micro LED chip is prepared on a substrate, the chip is ground and cut, then flip-chip is welded on a driving substrate, and the substrate of the chip is peeled off, so compared with the full-face peeling of the chip wafer in the prior art, the peeling difficulty is small and the yield is high, wherein four matrix arranged sub-pixel units in the chip are taken as one pixel and the proportion of the sub-pixel color is blue: red: green = 1: 1: 2, and an integrated single-color Micro LED module substrate is obtained. Quantum dot hole positions corresponding to the positions of the sub-pixel units of the chip are made on the transparent substrate, quantum dot light color conversion substances are filled in the quantum dot hole positions, and a quantum dot protection layer is deposited, so the conversion device is independently made on the transparent substrate, and compared with the conversion layer processed on the substrate layer in the prior art, the manufacturing efficiency can be improved. Moreover, the conversion device uses a combination structure of quantum dot-quantum dot protection layer-metal reflection layer-metal isolation layer-intermediate insulating cover layer, which can improve the light intensity, eliminate the light color crosstalk, protect the metal, and prevent the metal from causing short circuit of the integrated substrate chip when full-color Micro LED display is used. The part leaked after the light color conversion layer and the integrated substrate chip are peeled off from the substrate is connected by using a transparent insulating adhesive, so the conversion device and the chip module are independently prepared, and the processing yield of the conversion device and the manufacturing yield of the module chip are improved.

[0095] The above description is only an embodiment of the application, and does not limit the patent scope of the application, and any equivalent transformation or direct or indirect application in the related technical field based on the content of the specification and drawings is also included in the patent protection scope of the application.

Claims

1. A method of manufacturing a full-color quantum dot conversion device, characterized by, The method comprises the steps of: making quantum dot holes corresponding to the positions of sub-pixel units of the Micro LED chip on a transparent substrate; filling quantum dot light color conversion substances in the quantum dot holes and depositing a quantum dot protection layer; preparing a metal reflection layer and a metal spacing layer in turn at positions between the quantum dot holes above the quantum dot protection layer, uniformly covering an intermediate insulating cover layer above the metal reflection layer and the metal spacing layer, and filling a transparent adhesive in the grooves of the intermediate insulating cover layer to obtain a full-color quantum dot conversion device; preparing a metal reflection layer and a metal spacing layer in turn at positions between the quantum dot holes above the quantum dot protection layer comprises: covering the metal reflection layer on the quantum dot protection layer, and opening holes in the metal reflection layer at positions in the centers of the quantum dot holes; preparing a metal spacing layer at positions between the quantum dot holes above the metal reflection layer.

2. The method of claim 1, wherein the method further comprises: The step of making quantum dot holes corresponding to the positions of sub-pixel units of the chip on the transparent substrate comprises: making patterns corresponding to the positions of sub-pixel units of the chip on the transparent substrate using photolithography, and obtaining quantum dot holes by etching.

3. The method of claim 1, wherein the method further comprises: forming a plurality of quantum dots on the substrate; and forming a plurality of color conversion layers on the substrate, each of the plurality of color conversion layers including a plurality of quantum dots of a different color. The step of filling quantum dot light color conversion substances in the quantum dot holes and depositing a quantum dot protection layer comprises: spinning quantum dot light color conversion substances of two colors other than a first color among three primary colors in the quantum dot holes according to the color proportion of sub-pixels, the color proportion of the sub-pixels being blue: red: green = 1: 1: 2, and the first color being the color of the epitaxial layer of the Micro LED chip; removing excess quantum dot light color conversion substances using a developing solution; depositing an aluminum oxide quantum dot protection layer above the quantum dot light color conversion substances using atomic layer deposition.

4. A full color quantum dot conversion device, characterized by, A full-color quantum dot conversion device is prepared by the method for manufacturing the full-color quantum dot conversion device according to any one of claims 1 to 3. 5.A Micro LED display chip module, characterized in that, The full-color quantum dot conversion device comprises an integrated single-color Micro LED module substrate and a full-color quantum dot conversion device; The full-color quantum dot conversion device is inverted and faces the GaN reserved surface of the integrated single-color Micro LED module substrate; The full-color quantum dot conversion device is prepared by the method for manufacturing the full-color quantum dot conversion device according to any one of claims 1 to 3. 6.The Micro LED display chip module of claim 5, wherein, The full-color quantum dot conversion device is inverted, and the position of the full-color quantum dot conversion device coated with the transparent adhesive is aligned and bonded with the sub-pixel units of the integrated single-color Micro LED module substrate.

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