A novel two-transmit two-receive millimeter wave SIP device

Abstract

The application provides a novel two-transmitting and two-receiving millimeter wave SIP device, which comprises a gasket, a ceramic plate, a Kovar frame and a cover plate which are sequentially connected and arranged above the gasket; the gasket is provided with a plurality of gasket rectangular through grooves, which are a pair of transmitting rectangular through grooves and a pair of receiving rectangular through grooves; the ceramic plate is provided with a voltage stabilizing circuit, a transmitting channel, a receiving down-conversion and intermediate frequency amplification channel; and the voltage stabilizing circuit is used for power supply of the transmitting channel, the receiving down-conversion and intermediate frequency amplification channel. The application adopts structure waveguide-waveguide-SIW-microstrip transmission line to realize the conversion from waveguide to planar circuit, so that the millimeter wave SIP transceiver module has air tightness.

Description

Technical Field

[0001] This invention relates to the fields of communication and radar technology, specifically to a novel dual-transmitter, dual-receiver millimeter-wave SIP device. Background Technology

[0002] Millimeter waves (electromagnetic waves with wavelengths between 1mm and 10mm) have shorter wavelengths than other bands, resulting in stronger ionospheric penetration capabilities. They also possess greater penetration through smoke, dust, and fog than infrared and visible light, enabling all-weather operation. Furthermore, due to their relatively wide bandwidth, they can achieve point-to-point high-capacity communication and high-resolution imaging. The millimeter-wave band is currently the primary frequency band for military electronic technology development and is widely used in precision guidance, radar, and secure communications. With the increasing demand for wider bandwidth, higher sensitivity, and miniaturization in modern military electronic equipment, broadband transceiver components, as core components, directly impact the system's performance.

[0003] System-in-package (SIP) technology encapsulates multiple active and passive circuits together to provide system functionality. It can also be used as a subsystem within a circuit. To reduce system size, weight, and cost, SIP technology has become a current development trend.

[0004] Therefore, it is necessary to provide a millimeter-wave band SIP module that can meet the requirements of high frequency band, miniaturization, low cost and multi-channel development. Summary of the Invention

[0005] This invention addresses the shortcomings of traditional transceiver systems, such as large size and high cost, by providing a novel dual-transmitter, dual-receiver millimeter-wave SIP module that can meet the requirements of high-frequency band, miniaturization, low cost, and multi-channel development.

[0006] To achieve the above and other related objectives, the present invention is implemented through the following technical solutions:

[0007] A novel dual-transmitter dual-receiver millimeter-wave SIP device is characterized by comprising: a gasket, a ceramic plate sequentially connected above the gasket, a Kovar frame, and a cover plate;

[0008] The gasket is provided with a plurality of rectangular through slots, namely: a pair of transmitting rectangular through slots and a pair of receiving rectangular through slots;

[0009] The ceramic plate is equipped with a voltage regulator circuit, a transmitting channel, a receiving down-conversion channel, and an intermediate frequency amplification channel; the voltage regulator circuit is used to supply power to the transmitting channel, the receiving down-conversion channel, and the intermediate frequency amplification channel.

[0010] The transmission channel includes: a transmission frequency multiplier, a power amplifier, a transmission power divider connected in sequence, and two microstrip to waveguide transmission lines connected to the output of the transmission power divider;

[0011] The receiving downconversion includes a power combiner and a low-noise amplifier connected in sequence; the input terminal of the power combiner is connected to two waveguide-to-microstrip transmission lines;

[0012] The intermediate frequency (IF) amplification channel includes a first-stage IF amplifier, an adjustable attenuator, a second-stage IF amplifier, and a third-stage IF amplifier. The adjustable attenuator is connected to the output of the first-stage IF amplifier and the input of the second-stage IF amplifier. The output of the second-stage IF amplifier and the input of the third-stage IF amplifier are connected to an external circuit.

[0013] Furthermore, the gasket material is molybdenum copper or tungsten copper, and the two receiving rectangular through slots are located on one side of the gasket, with the center lines of the wide sides of the receiving rectangular through slots aligned; the two transmitting rectangular slots are located near the center of the gasket, with the center lines of the wide sides of the transmitting rectangular through slots aligned.

[0014] Except for the inner walls of the four rectangular through slots, the gasket is gold-plated. The maximum envelope formed by the two transmitting rectangular through slots does not interfere with the maximum envelope formed by the two receiving rectangular slots. The size of the rectangular slots is consistent with the size of the externally connected waveguide.

[0015] Furthermore, the ceramic plate is a multilayer ceramic plate with no less than 9 layers. The first layer is placed at the receiving downconverter and is treated with a blind cavity. Part of the edge ceramic is removed from both sides of the first and second layers of the ceramic plate to expose the third layer. The third layer is provided with an RF signal input interface, a power signal input interface, an external circuit interface, and an output voltage interface. The length of the removed edge ceramic is the same as the length of the multilayer ceramic plate. The dimensions of the Kovar frame and cover plate are the same as the dimensions of the first layer of the multilayer ceramic plate.

[0016] Furthermore, the outer dimensions of the ceramic plate are consistent with the outer dimensions of the molybdenum-copper gasket, and the power divider and power combiner are disposed on the first layer of the ceramic plate.

[0017] Furthermore, the output voltage interface requires an external large capacitor, which can also supply power to external devices.

[0018] Furthermore, the waveguide-to-microstrip transmission line and / or the waveguide-like portion of the microstrip-to-waveguide transmission line integrated in the ceramic plate is a rectangular shape formed by multiple through holes from the bottom to the fourth layer, and the rectangular shape is the same size as the rectangular through groove of the gasket; there is no metal at the bottom layer of the ceramic plate corresponding to the rectangular through groove of the gasket, and the rest is covered with metal.

[0019] Furthermore, the waveguide-to-microstrip transmission line is a waveguide-to-waveguide-to-SIW-to-microstrip transmission line; the microstrip-to-waveguide transmission line is a microstrip-to-SIW-to-waveguide-to-waveguide transmission line, and the corners of the waveguide-to-SIW or SIW-to-waveguide transmission line are connected by local plane grounding to form right-angle bend matching transmission of millimeter-wave signals; the SIW is a multilayer dielectric, and the multilayer dielectric SIW is converted into a single-layer dielectric SIW and then into a microstrip line through a step-type conversion; the middle layer of the waveguide has an open coupling hole for impedance matching.

[0020] Furthermore, each amplifier is isolated from the voltage regulator circuit by a low-pass filter, which is implemented by printed patterns on the fifth to penultimate layers. Each amplifier power supply node is connected to the low-pass filter via a TCV.

[0021] Furthermore, the adjustable attenuator includes several resistors that can be freely combined, wherein two of the resistors need to be grounded. Resistors R1, R2, and R3 are printed between the first-stage amplifier and the second-stage amplifier, and four resistors R4, R5, R6, and R7 are printed in parallel on one side of resistors R1 and R3, respectively. Each resistor has metal sheets on both sides for gold wire bonding. The resistors R1 to R7 can be freely combined, and adjustable attenuators with different attenuation can be formed by bonding them to different metal sheets.

[0022] Compared with the prior art, the present invention has the following advantages:

[0023] This invention can meet the requirements of high frequency band, miniaturization, low cost and multi-channel development. Attached Figure Description

[0024] Figure 1 This is a side view of the external structure of a novel dual-transmitter dual-receiver millimeter-wave SIP device according to an embodiment of the present invention;

[0025] Figure 2 This is a schematic diagram of the internal structure of a novel dual-transmitter dual-receiver millimeter-wave SIP device according to an embodiment of the present invention;

[0026] Figure 3 This is a top view of a novel dual-transmitter dual-receiver millimeter-wave SIP device gasket structure provided in an embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram of a novel dual-transmitter dual-receiver millimeter-wave SIP device waveguide-waveguide-SIW-microstrip line transmission line provided in an embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of an adjustable attenuator design for a novel dual-transmitter dual-receiver millimeter-wave SIP device according to an embodiment of the present invention.

[0029] Figure 6 This is a schematic diagram of a novel dual-transmitter, dual-receiver millimeter-wave SIP device provided in an embodiment of the present invention. Detailed Implementation

[0030] The following is in conjunction with the appendix Figure 1-6 The present invention provides a more detailed description of a novel dual-transmitter, dual-receiver millimeter-wave SIP device. The advantages and features of the invention will become clearer from the following description. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clarify the illustration of the embodiments of the invention. Please refer to the accompanying drawings for a clearer understanding of the objectives, features, and advantages of the invention. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes and to aid those skilled in the art; they are not intended to limit the implementation of the invention and therefore have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives of the invention, should still fall within the scope of the technical content disclosed in the invention.

[0031] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0032] like Figures 1-6 As shown, a novel dual-transmit and dual-receive millimeter-wave SIP device includes: a gasket 1, a ceramic plate 2, a Kovar frame 3, and a cover plate 4 sequentially connected and disposed above the gasket; the gasket 1 is provided with a plurality of rectangular through slots, namely: a pair of transmitting rectangular through slots 11 and a pair of receiving rectangular through slots 12.

[0033] A metal pad with a through slot is provided at the bottom for transmitting / receiving signals. A ceramic plate is placed on the metal pad. A voltage regulator circuit 21, a transmitting channel 22, a receiving down-conversion channel 23, and an intermediate frequency amplification channel 24 are integrated on the ceramic plate 2. A metal frame is placed on the ceramic plate. The Kovar frame is used to isolate three areas to isolate the transceiver circuit and the intermediate frequency circuit to avoid crosstalk between signals. Finally, the entire circuit is sealed with a cover plate to encapsulate it into a two-transmit, two-receive millimeter-wave SIP device.

[0034] The gasket material is molybdenum copper or tungsten copper. Two receiving rectangular through slots are located on one side of the gasket, and the center lines of the wide sides of the receiving rectangular through slots are aligned. Two transmitting rectangular slots are located near the center of the gasket, and the center lines of the wide sides of the transmitting rectangular through slots are aligned. The gasket is gold-plated except for the inner walls of the four rectangular through slots. The maximum envelope formed by the two transmitting rectangular through slots does not interfere with the maximum envelope formed by the two receiving rectangular slots. The size of the rectangular slots is consistent with the size of the externally connected waveguide to prevent conductive adhesive / solder from entering the through slots and affecting signal transmission performance during gasket installation.

[0035] See Figure 2 The ceramic plate 2 is provided with a voltage regulator circuit 21, a transmitting channel 22, a receiving down-conversion channel 23, and an intermediate frequency amplification channel 24; the voltage regulator circuit 21 is used to supply power to the transmitting channel 22, the receiving down-conversion channel 23, and the intermediate frequency amplification channel 24.

[0036] See Figure 6 The transmission channel includes: a transmission frequency multiplier, a power amplifier, a transmission power divider connected in sequence, and two microstrip to waveguide transmission lines connected to the output of the transmission power divider.

[0037] The receiving downconversion includes a power combiner and a low-noise amplifier connected in sequence; the input terminal of the power combiner is connected to two waveguide-to-microstrip transmission lines;

[0038] The intermediate frequency (IF) amplification channel includes a first-stage IF amplifier, an adjustable attenuator, a second-stage IF amplifier, and a third-stage IF amplifier. The adjustable attenuator is connected to the output of the first-stage IF amplifier and the input of the second-stage IF amplifier. The output of the second-stage IF amplifier and the input of the third-stage IF amplifier are connected to an external circuit.

[0039] The aforementioned novel dual-transmitter, dual-receiver millimeter-wave SIP device further includes: a local oscillator, which comprises a local oscillator frequency multiplier and a local oscillator amplifier connected in sequence. The input terminals of the local oscillator frequency multiplier and the transmitter frequency multiplier are connected to the output terminal of a power divider. The output terminal of the local oscillator amplifier and the output terminal of the receiving down-converter low-noise amplifier are connected to the output terminal of the first-stage intermediate frequency amplifier through a mixer. The SIP device also includes an oscillator, a frequency multiplier, and an amplifier connected in sequence. The output terminal of the amplifier is connected to the output terminal of the power divider.

[0040] like Figure 2 As shown, the ceramic plate is a multilayer ceramic plate with no less than 9 layers. The first layer is used to place the receiver downconverter (RF chip) and is treated with a blind cavity. Part of the edge ceramic 210 is removed from both sides of the first and second layers of the ceramic plate to expose the third layer. The third layer is provided with an RF signal input interface 211, a power signal input interface 212, an external circuit interface 213, and an output voltage interface 214. The length of the removed edge ceramic is the same as the length of the multilayer ceramic plate. The dimensions of the Kovar frame 3 and the cover plate 4 are the same as the dimensions of the first layer of the multilayer ceramic plate.

[0041] The outer dimensions of the ceramic plate 2 are the same as those of the molybdenum-copper gasket 1. The transmitter power divider and power combiner are located on the first layer of the ceramic plate. The isolation resistors of the transmitter power divider and power combiner are printed using a thick film process, sintered as a whole, and are located between the two transmitter ports and the two receiver ports, respectively.

[0042] The output voltage interface 214 requires an external large capacitor and can also power external devices. The waveguide-to-microstrip transmission line and / or the waveguide-like portion of the microstrip-to-waveguide transmission line integrated in the ceramic plate is a rectangular shape formed by multiple through-holes from the bottom to the fourth layer. The rectangular shape is the same size as the rectangular through-slot of the spacer. The bottom layer of the ceramic plate, corresponding to the rectangular through-slot of the spacer, has no metal; the rest is covered with metal. The waveguide-to-microstrip transmission line is a waveguide-to-waveguide-to-SIW-to-microstrip transmission line (see...). Figure 4 The microstrip to waveguide transmission line is a microstrip to SIW to waveguide-like transmission line. The corners of the waveguide-like to SIW or SIW to waveguide-like transmission are connected by local plane grounding to form right-angle bend matching transmission of millimeter-wave signals. The SIW is a multilayer dielectric, which is converted into a single-layer dielectric SIW and then into a microstrip line through a step-type conversion. The middle layer of the waveguide (the fourth layer of the multilayer ceramic plate) has a coupling hole for impedance matching.

[0043] Each amplifier is isolated from the voltage regulator circuit by a low-pass filter, which is implemented by printed patterns on the fifth to penultimate layers. Each amplifier power supply node is connected to the low-pass filter via a TCV (through-ceramic via).

[0044] like Figure 5As shown, the adjustable attenuator includes several resistors that can be freely combined, two of which need to be grounded. Resistors R1, R2, and R3 are printed between the first-stage amplifier and the second-stage amplifier, and four resistors R4, R5, R6, and R7 are printed in parallel on one side of resistors R1 and R3, respectively. Each resistor has metal sheets on both sides for gold wire bonding. Resistors R1 to R7 can be freely combined, and adjustable attenuators with different attenuation can be formed by bonding them to different metal sheets.

[0045] In a specific embodiment, R1, R2, and R3 are 6Ω, 12Ω, and 6Ω, respectively; R4 to R7 are 110Ω, 220Ω, 220Ω, and 110Ω, respectively; both 220Ω resistors need to be grounded, and each resistor has metal sheets on both sides for gold wire bonding. The seven resistors can be freely combined, and by bonding to different metal sheets, adjustable attenuators with different attenuation values ​​can be formed. The output port of the second-stage intermediate frequency amplifier and the input port of the second-stage intermediate frequency amplifier are passed through the TCV via to the third layer, and electrodes (213) are led out from this layer for external functional expansion, such as filtering, temperature-compensated attenuation, etc.

[0046] The receiving downconverter 23, intermediate frequency amplification channel 24, local oscillator and transmitting channel 22 are isolated by metal vias. The metal vias are arranged in layers one through five, staggered from layer five to bottom. There is a solderable layer above the metal vias for eutectic welding with the Kovar frame 3. The local oscillator port of the receiving mixer and the local oscillator amplifier are transmitted via microstrip to SIW to microstrip 28. The frame is placed above the SIW for isolation. After the power divider of the transmitting signal, one path is sent to the transmitting channel, and the other path enters the third layer through TCV (ceramic through-hole), passes through the transmitting waveguide to SIW to microstrip, and then enters the first layer through TCV (ceramic through-hole) to the input terminal of the local oscillator amplifier. The Kovar frame is eutectic welded to the ceramic plate, the ceramic plate is bonded / welded to the gasket, and the SIP uses a cover plate with parallel sealing.

[0047] This invention provides a novel dual-transmit, dual-receive millimeter-wave SIP device. Based on a ceramic multilayer board, the SIP device integrates a power supply, transmitting channel, receiving channel, and intermediate frequency circuitry, achieving a high degree of integration. Furthermore, although the external structure of the ceramic multilayer board-based SIP module is an open waveguide, the internal structure of the ceramic board integrates a microstrip-waveguide structure, ensuring hermeticity within the component. Further, the ceramic multilayer board-based SIP module offers strong scalability, with a regulated voltage interface and an external circuit interface led out from the third layer of the ceramic board, allowing for expansion of the intermediate frequency circuitry and enabling power supply to external circuits. Even further, the ceramic multilayer board-based SIP module integrates a power divider, filter, and attenuator within the ceramic board, resulting in miniaturization and low cost. Finally, due to its unique waveguide port layout, the ceramic multilayer board-based SIP module is easily integrated with external waveguide transmission ports.

[0048] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A novel dual-transmit dual-receive millimeter-wave SIP device, characterized in that, include: Gasket, ceramic plate, Kovar frame and cover plate connected in sequence above the gasket; The gasket is provided with a plurality of rectangular through slots, namely: a pair of transmitting rectangular through slots and a pair of receiving rectangular through slots; The ceramic plate is equipped with a voltage regulator circuit, a transmitting channel, a receiving down-conversion channel, and an intermediate frequency amplification channel; The voltage regulator circuit is used to supply power to the transmitting channel, the receiving down-conversion channel, and the intermediate frequency amplification channel; The transmission channel includes: a transmission frequency multiplier, a power amplifier, a transmission power divider connected in sequence, and two microstrip to waveguide transmission lines connected to the output of the transmission power divider; The receiving downconversion includes a power combiner and a low-noise amplifier connected in sequence; the input terminal of the power combiner is connected to two waveguide-to-microstrip transmission lines; The intermediate frequency (IF) amplification channel includes a first-stage IF amplifier, an adjustable attenuator, a second-stage IF amplifier, and a third-stage IF amplifier; the adjustable attenuator is connected to the output of the first-stage IF amplifier and the input of the second-stage IF amplifier, and the output of the second-stage IF amplifier and the input of the third-stage IF amplifier are connected to an external circuit. The outer dimensions of the ceramic plate are the same as the outer dimensions of the molybdenum-copper gasket, and the power divider and power combiner are disposed on the first layer of the ceramic plate; The waveguide-to-microstrip transmission line and / or the waveguide-like portion of the microstrip-to-waveguide transmission line integrated in the ceramic plate is a rectangular shape formed by multiple through holes from the bottom to the fourth layer. The rectangular shape is the same size as the rectangular through groove of the gasket. There is no metal at the bottom layer of the ceramic plate corresponding to the rectangular through groove of the gasket, and the rest is covered with metal. The waveguide-to-microstrip transmission line is a waveguide-to-waveguide-to-SIW-to-microstrip transmission line; the microstrip-to-waveguide transmission line is a microstrip-to-SIW-to-waveguide-to-waveguide transmission line. The corners of the waveguide-to-SIW or SIW-to-waveguide transmission line are connected by local plane grounding to form right-angle bend matching transmission of millimeter-wave signals. The SIW is a multilayer dielectric, which is converted into a single-layer dielectric SIW and then into a microstrip line through a step-type conversion. The middle layer of the waveguide-to-microstrip line has an open coupling aperture for impedance matching.

2. The novel dual-transmit dual-receive millimeter-wave SIP device as described in claim 1, characterized in that, The gasket material is molybdenum copper or tungsten copper. Two receiving rectangular through slots are located on one side of the gasket, and the center lines of the wide sides of the receiving rectangular through slots are aligned. Two transmitting rectangular slots are located near the center of the gasket, and the center lines of the wide sides of the transmitting rectangular through slots are aligned. Except for the inner walls of the four rectangular through slots, the gasket is gold-plated. The maximum envelope formed by the two transmitting rectangular through slots does not interfere with the maximum envelope formed by the two receiving rectangular slots. The size of the rectangular slots is consistent with the size of the externally connected waveguide.

3. The novel dual-transmit dual-receive millimeter-wave SIP device as described in claim 1, characterized in that, The ceramic plate is a multilayer ceramic plate with no less than 9 layers. The first layer is placed at the receiving downconverter and is treated with a blind cavity. Part of the edge ceramic is removed from both sides of the first and second layers of the ceramic plate to expose the third layer. The third layer is provided with an RF signal input interface, a power signal input interface, an external circuit interface, and an output voltage interface. The length of the removed edge ceramic is the same as the length of the multilayer ceramic plate. The dimensions of the Kovar frame and cover plate are the same as the dimensions of the first layer of the multilayer ceramic plate.

4. A novel dual-transmit dual-receive millimeter-wave SIP device as described in claim 3, characterized in that, The output voltage interface requires an external large capacitor and can also supply power to external devices.

5. A novel dual-transmit dual-receive millimeter-wave SIP device as described in claim 1, characterized in that, Each amplifier is isolated from the voltage regulator circuit by a low-pass filter, which is implemented by printed patterns on the fifth to penultimate layers. Each amplifier power supply node is connected to the low-pass filter via a TCV.

6. A novel dual-transmit dual-receive millimeter-wave SIP device as described in claim 1, characterized in that, The adjustable attenuator includes several resistors that can be freely combined, two of which need to be grounded. Resistors R1, R2, and R3 are printed between the first-stage intermediate frequency amplifier and the second-stage intermediate frequency amplifier, and four resistors R4, R5, R6, and R7 are printed in parallel on the side of resistors R1 and R3, respectively. Each resistor has metal sheets on both sides for gold wire bonding. The resistors R1 to R7 can be freely combined, and adjustable attenuators with different attenuation can be formed by bonding them to different metal sheets.

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