Method, device, apparatus, medium and program product for determining far-field voltage

Abstract

The present application relates to a method, device, equipment, medium and program product for determining far-field voltage. The method comprises: performing near-field scanning on an object to be scanned, acquiring near-field electromagnetic field data, further acquiring a target near-field voltage based on the near-field electromagnetic field data, and determining the target far-field voltage based on the target near-field voltage, the mapping relationship between the near-field voltage and the far-field voltage. The method can improve the accuracy of determining the far-field voltage, thereby improving the accuracy of the coupling effect of the far-field electromagnetic field on the device.

Description

Technical Field

[0001] The present application relates to the field of electromagnetic data processing technology, and in particular to a method, device, equipment, medium and program product for determining far-field voltage. Background Art

[0002] As chips and printed circuit boards (PCBs) develop towards high integration and high speed, electromagnetic interference image reconstruction of near-field scanning and far-field scanning has become an important research direction for dealing with electromagnetic compatibility (EMC) issues.

[0003] However, in practice it is difficult to build a far-field electromagnetic field experiment to evaluate EMC issues. Currently, far-field data is mainly inferred from near-field data. For example, electromagnetic field equations are established using simulated far-field data and near-field test data. An equivalent dipole array is established near the device based on the solution of the electromagnetic equation. The equivalent dipole array is then used to approximate the coupling effect of the far-field electromagnetic field on the device.

[0004] However, since the research combining electromagnetic equation simulation and experiment is not yet mature, the accuracy of the coupling effect of the far-field electromagnetic field on the device determined by the above method is low. Summary of the invention

[0005] Based on this, it is necessary to provide a method, device, equipment, medium and program product for determining far-field voltage that can improve the accuracy of far-field electromagnetic field in response to the above technical problems.

[0006] In a first aspect, the present application provides a method for determining a far-field voltage. The method comprises:

[0007] Perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data;

[0008] According to the near-field electromagnetic field data, the target near-field voltage is obtained;

[0009] Determine a target far-field voltage according to a target near-field voltage, a mapping relationship between the near-field voltage and the far-field voltage;

[0010] The mapping relationship is determined according to the acquisition method of the far-field voltage and the acquisition method of the near-field voltage, and the mapping relationship includes the corresponding relationship between the far-field voltage parameter, the near-field voltage parameter and the correction factor.

[0011] In one embodiment, the correction factor is determined based on the maximum electric field and the maximum magnetic field obtained by near-field scanning.

[0012] In one embodiment, the correction factor includes a first correction factor and a second correction factor, the first correction factor is determined based on the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined based on the near-field incident wave amplitude, the wave impedance in a vacuum, and the magnetic field maximum value.

[0013] In one embodiment, the target near-field voltage includes an induced voltage of a low-frequency electric field and an induced voltage of a low-frequency magnetic field under a near-field condition; and determining the target far-field voltage according to a mapping relationship between the target near-field voltage, the near-field voltage, and the far-field voltage includes:

[0014] Determine the target low-frequency far-field voltage according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship;

[0015] The low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0016] In one of the embodiments, the target near-field voltage includes a maximum value of an induced voltage of a high-frequency electric field and a maximum value of an induced voltage of a high-frequency magnetic field under near-field conditions, and the correction factor also includes a third correction factor and a fourth correction factor; and according to the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage, determining the target far-field voltage includes:

[0017] Determine the target high-frequency far-field voltage according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship;

[0018] Among them, the high-frequency mapping relationship is a relationship between the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor. The third correction factor is determined according to the speed of light in a vacuum, the angular frequency, and the length of the microstrip line. The fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0019] In one embodiment, obtaining a target near-field voltage according to near-field electromagnetic field data includes:

[0020] The target near-field voltage is obtained according to the near-field electromagnetic field data and the preset Taylor model.

[0021] In a second aspect, the present application also provides a device for determining a far-field voltage. The device comprises:

[0022] A first acquisition module is used to perform near-field scanning on the object to be scanned and acquire near-field electromagnetic field data;

[0023] A second acquisition module is used to acquire a target near-field voltage according to the near-field electromagnetic field data;

[0024] A determination module, configured to determine a target far-field voltage according to a target near-field voltage and a mapping relationship between the near-field voltage and the far-field voltage;

[0025] The mapping relationship is determined according to the acquisition method of the far-field voltage and the acquisition method of the near-field voltage, and the mapping relationship includes the corresponding relationship between the far-field voltage parameter, the near-field voltage parameter and the correction factor.

[0026] In a third aspect, the present application further provides a computer device, which includes a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the method for determining the far-field voltage of any embodiment of the first aspect is implemented.

[0027] In a fourth aspect, the present application further provides a computer-readable storage medium, wherein a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the method for determining the far-field voltage in any embodiment of the first aspect is implemented.

[0028] In a fifth aspect, the present application further provides a computer program product, which includes a computer program, and when the computer program is executed by a processor, the method for determining the far-field voltage in any embodiment of the first aspect is implemented.

[0029] The above-mentioned method, device, equipment, medium and program product for determining far-field voltage perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data, and further obtain the target near-field voltage based on the near-field electromagnetic field data, and determine the target far-field voltage based on the obtained target near-field voltage, the mapping relationship between the near-field voltage and the far-field voltage. Since the above-mentioned target far-field voltage is obtained based on the near-field electromagnetic field data obtained by experiment, and the target near-field voltage is obtained by analyzing the data, and further obtained based on the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage, it is determined from the perspective of infinite fitting of the conversion formula of the near-field experimental data and the near-far-field voltage, and the correction factor is adjusted to make the determined far-field formula infinitely close to the actual value, thereby improving the accuracy of determining the target far-field voltage, and thus improving the accuracy of the coupling effect of the far-field electromagnetic field on the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is an application environment diagram of a method for determining far-field voltage in one embodiment;

[0031] Figure 2 is a flow chart of a method for determining far-field voltage in one embodiment;

[0032] Figure 3 An equivalent point-path model diagram of a near-field electromagnetic field incident on a microstrip line in one embodiment;

[0033] Figure 4 is a flow chart of a method for determining a low-frequency far-field voltage in another embodiment;

[0034] Figure 5 is a flow chart of a method for determining high-frequency far-field voltage in another embodiment;

[0035] Figure 6 is a structural block diagram of a device for determining a far-field voltage in one embodiment;

[0036] Figure 7 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] The following is a brief description of the implementation environment involved in the method for determining the far-field voltage provided in the embodiment of the present application. The method for determining the far-field voltage provided in the embodiment of the present application can be applied to the following: Figure 1 The computer device shown. The computer device is a high-performance computing device, which includes a processor and a memory connected through a system bus, in which a computer program is stored, and when the processor executes the computer program, the steps of the following method embodiment can be executed. Optionally, the computer device may also include a network interface, a display screen, and an input device. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory, and the non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computer device is used to communicate with an external terminal through a network connection. Optionally, the computer device can be a server, a personal computer, a personal digital assistant, or other terminal devices, such as a tablet computer, a mobile phone, etc., or a cloud or remote server. The embodiment of the present application does not limit the specific form of the computer device.

[0039] After introducing the application scenarios of the method for determining the far-field voltage provided in the embodiments of the present application, the following focuses on the process of determining the far-field voltage.

[0040] In one embodiment, Figure 2 As shown, a method for determining far-field voltage is provided, and the method is applied to Figure 1The computer device in the example is used to illustrate, including the following steps:

[0041] S201 , performing near-field scanning on an object to be scanned to obtain near-field electromagnetic field data.

[0042] Among them, the object to be scanned can be a microstrip line, and the microstrip line can be equivalent to a plurality of RLC circuit modules. The near-field scanning can be an operation of scanning the microstrip line to be tested point by point by using a near-field scanner or a near-field scanning device, using a near-field probe close to the microstrip line to be tested. The near-field electromagnetic field data can be electrical signal data of the electromagnetic field near field of the microstrip line to be tested collected in real time by the near-field scanner.

[0043] In this embodiment, a near-field scanning device can be used to perform a near-field scanning on the object to be scanned, and the scanning result can be analyzed in combination with a relevant model of the near-field electromagnetic field to obtain near-field electromagnetic field data. The near-field electromagnetic field data can be electrical signal data of the near-field electromagnetic field, and can be, for example, electric field data or magnetic field data of the near-field electromagnetic field.

[0044] In this embodiment, the near-field scanning results can be combined with the Taylor model related to the electromagnetic field to obtain near-field electromagnetic field data. Figure 3 As shown, since the microstrip line to be measured in this embodiment is straight, considering that the direction of the microstrip line to be measured is in the x direction, only the electric field perpendicular to the x direction and the magnetic field in the x-direction It can be coupled to the microstrip line, and further, the near-field electromagnetic field data can be obtained according to the following formula:

[0045] Formula 1

[0046] in, is the amplitude of the incident wave, is the relative dielectric constant of the microstrip line, and h is the thickness of the microstrip line. is the magnetic field of the TE mode in the y direction, is the magnetic field of the TM mode in the y direction. Among them, TE mode and TM mode are two different propagation modes of electromagnetic waves. Figure 3 As shown, the positive direction of the x-axis is the length direction of the microstrip line, the positive direction of the z-axis is the thickness direction of the microstrip line, and the positive direction of the y-axis is the direction perpendicular to the paper surface and inward according to the right-hand screw rule. is the angle between the propagation direction of the electromagnetic field and the plane wave, ψ is the angle between the electric field direction E and the positive direction of the y-axis, is the angle between the plane wave and the x direction. Further, for the convenience of expression, in formula 1:

[0047] Formula 2

[0048] Formula 3

[0049] Formula 4

[0050] Formula 5

[0051] Formula 6

[0052] Formula 7

[0053] in, is the wave impedance in vacuum. Generally, the wave impedance in vacuum is a constant of 377Ω. is the relative dielectric constant of the microstrip line, j is the imaginary unit, is the angular frequency, is the speed of light in a vacuum.

[0054] S202: Obtain a target near-field voltage according to the near-field electromagnetic field data.

[0055] The target near-field voltage can be the induced voltage at both ends of the microstrip line. Figure 3 As shown, the target near-field voltage can be the load and load The induced voltage across the terminals.

[0056] In this embodiment, the computer device can obtain the induced voltage at both ends of the microstrip line based on the near-field electromagnetic field data obtained in S201 and in combination with an equivalent circuit model of the near-field electromagnetic field incident on the wire.

[0057] In this embodiment, the following is established: Figure 3 The equivalent circuit model of the near-field electromagnetic field incident on the microstrip line is shown, and the target near-field voltage is obtained according to the near-field electromagnetic field data determined by the above formula 1 and the preset Taylor model in the electromagnetic field.

[0058] S203: Determine a target far-field voltage according to a target near-field voltage and a mapping relationship between the near-field voltage and the far-field voltage.

[0059] The mapping relationship is determined according to the acquisition method of the far-field voltage and the acquisition method of the near-field voltage, and the mapping relationship includes the correspondence between the far-field voltage parameter, the near-field voltage parameter and the correction factor. The target far-field voltage can be the induced voltage of the far-field electromagnetic field incident on the microstrip line.

[0060] In this embodiment, further, the mapping relationship between the near-field voltage and the far-field voltage may include a mapping relationship between the near-field voltage and the far-field voltage. Exemplarily, the near-field voltage may be brought into this mapping relationship to calculate the far-field voltage, or a model including the correspondence between the far-field voltage parameter, the near-field voltage parameter and the correction factor may be established, the near-field voltage may be brought into the model, and the far-field voltage may be output. The correction factor may be related to the maximum value of the near-field electric field and the maximum value of the near-field magnetic field. Exemplarily, in such a case Figure 3 In the equivalent circuit model shown in the figure, under far-field conditions, the load The induced voltage can be expressed by the following formula:

[0061] Formula 8

[0062] in, The electric field at the load under far-field conditions The induced voltage at The magnetic field under far-field conditions is The induced voltage at It can include two electromagnetic field modes and . For example, , and They can be written as:

[0063] Formula 9

[0064] Formula 10

[0065] Formula 11

[0066] Where j is the imaginary unit, is the angular frequency, is the amplitude of the incident wave, is the speed of light in vacuum, is the effective dielectric constant, is the relative dielectric constant of the microstrip line, For load The reflection coefficient, For load The reflection coefficient is h, the thickness of the microstrip line, and L is the length of the microstrip line. is the angle between the propagation direction of the electromagnetic field and the plane wave, ψ is the angle between the electric field direction E and the positive direction of the y-axis, is the angle between the plane wave and the x-direction. , It can be expressed by Formula 4, Formula 7 and Formula 5 respectively. It can be written as:

[0067] Formula 12

[0068] in, It can be expressed as follows:

[0069] Formula 13

[0070] Furthermore, under near-field conditions, when the frequency of the incident electromagnetic wave is low, the load The induced voltage can be expressed by the following formula:

[0071] Formula 14

[0072] In this embodiment, the load can be The induced voltage formula 8 and near-field conditions, the load The induced voltage formula 14 is used to obtain the mapping relationship between the far-field voltage and the near-field voltage when the frequency of the incident electromagnetic wave is low. For example, when the frequency of the incident electromagnetic wave is low, the mapping relationship between the far-field voltage and the near-field voltage can be:

[0073] Formula 15

[0074] in, The low frequency electric field at the load under far field conditions The induced voltage at is the maximum value of the electric field under near-field conditions, is the induced voltage of the low-frequency electromagnetic field under near-field conditions, is the maximum value of the magnetic field under near-field conditions, is the induced voltage of the low-frequency electric field under near-field conditions, is the maximum value of the low-frequency voltage under far-field conditions, is the wave impedance in vacuum, is the relative dielectric constant of the microstrip line.

[0075] The method for determining the target far-field voltage provided in the embodiment of the present application is to perform a near-field scan on the scanned object to obtain near-field electromagnetic field data, obtain the target near-field voltage according to the near-field electromagnetic field data, and determine the target far-field voltage according to the obtained target near-field voltage, the mapping relationship between the near-field voltage and the far-field voltage. Compared with the prior art, the technical solution of the present application does not need to simulate far-field data, nor does it need to establish an electromagnetic field equation and solve the electromagnetic field equation. Since the mapping relationship is determined according to the acquisition method of the far-field voltage and the acquisition method of the near-field voltage, and the mapping relationship includes the correspondence between the far-field voltage parameter, the near-field voltage parameter and the correction factor, the embodiment of the present application can be directly based on the mapping relationship between the near-field voltage and the far-field voltage, and the far-field voltage can be derived according to the near-field voltage, and the accuracy is relatively high. Moreover, the correction factor makes the determined far-field formula infinitely close to the actual value, further improving the accuracy of determining the target far-field voltage, thereby improving the accuracy of the coupling effect of the far-field electromagnetic field on the device.

[0076] In one embodiment, Figure 2 Based on the illustrated embodiment, this embodiment introduces the relevant contents of the correction factor mentioned above. The correction factor can be determined based on the maximum electric field and the maximum magnetic field obtained by near-field scanning, and the correction factor includes a first correction factor and a second correction factor, the first correction factor is determined based on the near-field incident wave amplitude and the maximum electric field, and the second correction factor is determined based on the near-field incident wave amplitude, the wave impedance in a vacuum, and the maximum magnetic field.

[0077] In the present embodiment, the correction factor may be a correction factor between the target near-field voltage and the target far-field voltage corresponding to a lower frequency of the incident electromagnetic wave, or may be a correction factor between the target near-field voltage and the target far-field voltage corresponding to a higher frequency of the incident electromagnetic wave. It should be noted that the correction factor between the target near-field voltage and the target far-field voltage corresponding to a lower frequency of the incident electromagnetic wave and the correction factor between the target near-field voltage and the target far-field voltage corresponding to a higher frequency of the incident electromagnetic wave may be different or the same. Furthermore, the lower frequency of the incident electromagnetic wave may be when the frequency of the incident electromagnetic wave is less than 300 MHz, and the higher frequency of the incident electromagnetic wave may be when the frequency of the incident electromagnetic wave is greater than 300 MHz, which is not limited in the embodiments of the present application.

[0078] In this embodiment, the correction factor can be determined according to the maximum electric field value and the maximum magnetic field value obtained by the near-field scanning, and according to the conversion relationship between the target near-field voltage and the target far-field voltage.

[0079] In this embodiment, when the frequency of the incident electromagnetic wave is low, the correction factor may include but is not limited to a first correction factor and a second correction factor. Further, the first correction factor may be determined based on the near-field incident wave amplitude and the maximum value of the electric field, and the second correction factor may be determined based on the near-field incident wave amplitude, the wave impedance in the vacuum, and the maximum value of the magnetic field. Exemplarily, the first correction factor may be , the second correction factor can be .

[0080] The method for determining the correction factor provided in the embodiment of the present application obtains the correction factor between the target near-field voltage and the target far-field voltage when the incident wave frequency is low based on the maximum electric field value and the maximum magnetic field value obtained by the near-field scan. Since the correction factor is related to the electric field and magnetic field values ​​obtained by the near-field scan, different electric field and magnetic field values ​​obtained by the near-field scan correspond to different correction factors, which increases the flexibility of the correction factor and makes the determined target far-field voltage more accurate.

[0081] In one embodiment, a method for determining a target far-field voltage in a low-frequency scenario is described in detail. Based on the above embodiment, the target near-field voltage includes the induced voltage of a low-frequency electric field and the induced voltage of a low-frequency magnetic field under near-field conditions; the above S203 "determining the target far-field voltage according to the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage" includes:

[0082] The target low-frequency far-field voltage is determined according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship; wherein the low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0083] In this embodiment, the mapping relationship can be adjusted according to the frequency of the actual incident electromagnetic wave to determine the target far-field voltage corresponding to different incident electromagnetic wave frequencies. Exemplarily, if the frequency of the incident wave is low and the length of the microstrip line is much smaller than the wavelength of the coupled electromagnetic wave, the target near-field voltage may include the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field under the near-field condition. Exemplarily, the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field under the near-field condition can be expressed as:

[0084] Formula 14

[0085] in, is the angular frequency, h is the thickness of the microstrip line, L is the length of the microstrip line, is the effective dielectric constant, is the speed of light in vacuum, is the magnetic permeability in vacuum, For load The reflection coefficient, for The reflection coefficient, is the average value of the electric field, is the average value of the magnetic field.

[0086] In this embodiment, the first correction factor can be , the second correction factor can be . Further, the target low-frequency far-field voltage can be determined based on the relationship between the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field, the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor, and the second correction factor under near-field conditions. Among them, the substituted value of the induced voltage parameter of the low-frequency electric field can be the average value of the induced voltage of the low-frequency electric field, the maximum value of the induced voltage of the low-frequency electric field, or the weighted average value of the induced voltage of the low-frequency electric field. The substituted value of the induced voltage parameter of the low-frequency magnetic field can be the average value of the induced voltage of the low-frequency magnetic field, the maximum value of the induced voltage of the low-frequency magnetic field, or the weighted average value of the induced voltage of the low-frequency magnetic field. Exemplarily, the target low-frequency far-field voltage can be expressed as:

[0087] Formula 15

[0088] in, is the induced voltage of the low-frequency electric field under near-field conditions, is the induced voltage of the low-frequency electromagnetic field under near-field conditions, The low frequency electric field at the load under far field conditions The induced voltage at is the maximum value of the far-field voltage under low-frequency conditions.

[0089] The method for determining the target low-frequency far-field voltage provided in the embodiment of the present application determines the target low-frequency far-field voltage based on the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship. Since the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field are both obtained from experimental data obtained by near-field scanning and related physical models, the determined induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field have high accuracy. Furthermore, the low-frequency mapping relationship is related to the electric field and magnetic field values ​​obtained by the near-field scanning, so that different electric field and magnetic field values ​​obtained by the near-field scanning correspond to different low-frequency mapping relationships, which increases the flexibility of the low-frequency mapping relationship and makes the target low-frequency far-field voltage finally determined more accurate.

[0090] In one embodiment, a method for determining a target far-field voltage in a high-frequency scenario is described in detail. Based on the above embodiment, the target near-field voltage includes the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field under near-field conditions, and the correction factor also includes a third correction factor and a fourth correction factor. The above S203 "determine the target far-field voltage according to the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage" includes:

[0091] The target high-frequency far-field voltage is determined according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship; wherein the high-frequency mapping relationship is a relationship formula including the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, a first correction factor, a second correction factor, a third correction factor and a fourth correction factor, the third correction factor is determined according to the speed of light in a vacuum, the angular frequency and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0092] In this embodiment, if the frequency of the incident wave is high, the target near-field voltage may include the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field under the near-field condition. Exemplarily, the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field under the near-field condition may be expressed as:

[0093] Formula 16

[0094] in, is the angular frequency, h is the thickness of the microstrip line, L is the length of the microstrip line, is the effective dielectric constant, is the speed of light in vacuum, For load The reflection coefficient, For load The reflection coefficient, It can be expressed by formula 13: and They are the maximum values ​​of the electric field and magnetic field when the microstrip line is scanned in the near field.

[0095] In this embodiment, when the frequency of the incident wave is high, the correction factor includes the third correction factor and the fourth correction factor in addition to the first correction factor and the second correction factor. The third correction factor may include but is not limited to being determined based on the speed of light in a vacuum, the angular frequency, and the length of the microstrip line, and the fourth correction factor may include but is not limited to being determined based on the relative dielectric constant and the equivalent dielectric constant of the microstrip line. Exemplarily, the third correction factor may be The fourth correction factor can be a relative dielectric constant of the microstrip line and the effective dielectric constant The relevant correction factor.

[0096] In this embodiment, when the frequency of the incident wave is high, the high-frequency mapping relationship between the target far-field voltage and the target near-field voltage may include, but is not limited to, the relationship between the maximum value parameter of the induced voltage of the high-frequency electric field, the maximum value parameter of the induced voltage of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor, and the fourth correction factor. Among them, the substituted value of the induced voltage parameter of the high-frequency electric field may be the average value of the induced voltage of the high-frequency electric field, or the maximum value of the induced voltage of the high-frequency electric field, or the weighted average value of the induced voltage of the high-frequency electric field. The substituted value of the induced voltage parameter of the high-frequency magnetic field may be the average value of the induced voltage of the high-frequency magnetic field, or the maximum value of the induced voltage of the high-frequency magnetic field, or the weighted average value of the induced voltage of the high-frequency magnetic field. Exemplarily, the third correction factor may be , the fourth correction factor can be a and Related correction factors.

[0097] Exemplarily, the target high frequency far-field voltage can be expressed as:

[0098] Formula 17

[0099] in, is the amplitude of the incident wave, is the speed of light in vacuum, is the angular frequency, L is the length of the microstrip line, is the effective dielectric constant, is the relative dielectric constant of the microstrip line, is the maximum value of the high-frequency electric field induced voltage under near-field conditions, is the maximum value of the high-frequency electromagnetic induction voltage under near-field conditions, is the maximum value of the electric field under near-field conditions, is the maximum value of the magnetic field under magnetic field conditions, is the wave impedance in vacuum, The high frequency incident wave in the far field condition is The induced voltage at .

[0100] The method for determining the target high-frequency far-field voltage provided in the embodiment of the present application determines the target high-frequency far-field voltage based on the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field, and the high-frequency mapping relationship. Since the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field are both obtained from experimental data obtained by near-field scanning and related physical models, the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field are determined with high accuracy. Furthermore, the high-frequency mapping relationship is related to the maximum electric field and the maximum magnetic field obtained by the near-field scanning, so that different maximum electric field and maximum magnetic field obtained by the near-field scanning correspond to different high-frequency mapping relationships, which increases the flexibility of the high-frequency mapping relationship and makes the target high-frequency far-field voltage finally determined more accurate.

[0101] In one embodiment, based on the above embodiment, in the above S202, "obtaining a target near-field voltage according to the near-field electromagnetic field data" includes: obtaining a target near-field voltage according to the near-field electromagnetic field data and a preset Taylor model.

[0102] In this embodiment, the near-field electromagnetic field data obtained in S201 and the Taylor model preset in the electromagnetic field can be combined with the near-field electromagnetic field data and the Taylor model preset in the electromagnetic field field to obtain the target near-field voltage. Figure 3 The equivalent circuit model of the electromagnetic field incident on the microstrip line and the preset Taylor model are shown to obtain the change of the induced voltage of the electric field on the microstrip line along the length direction of the microstrip line and the change of the induced voltage of the magnetic field on the microstrip line along the length direction of the microstrip line:

[0103] Formula 18

[0104] in, j is an imaginary unit, is the angular frequency, is the magnetic permeability in vacuum, is the inductance per unit length, , z , is the magnetic field strength, is the electric field strength.

[0105] Furthermore, according to the Taylor model, formula (2) is integrated along the length direction of the microstrip line to obtain the load at the left end of the microstrip line: The induced voltage And the right end load of the microstrip line The induced voltage :

[0106] Formula 19

[0107] in, For load The reflection coefficient, For load The reflection coefficient is, h is the thickness of the microstrip line, L is the length of the microstrip line, x is the direction representing the length of the microstrip line, z is the direction representing the thickness of the microstrip line, is the characteristic impedance of the microstrip line, which can be expressed as the ratio of the incident voltage to the incident current and is generally a constant. ,in, is the speed of light in vacuum, is the effective dielectric constant.

[0108] For the coupling of near-field electromagnetic fields, replace the equations (1) and (2) with and use Replace, and get the induced voltage of the electric field and the induced voltage of the magnetic field after the electromagnetic field is incident on the microstrip line under near-field conditions:

[0109] Formula 20

[0110] Furthermore, Formula 20 can be simplified in two aspects. Because the near-field coupling is carried out in an extremely small area, that is, the near-field coupling is carried out in a very small area centered at a specific location. Assume that the specific location is At, then the near-field coupling is The coupling is performed on the area with the smallest radius from the center. According to this coupling method, the complex exponential part of formula 20 can be taken out of the integral, thus obtaining:

[0111] Formula 21

[0112] Furthermore, in order to further improve the measurement accuracy, the integrals of the electric field and magnetic field in Formula 21 are replaced by the corresponding average values ​​of the electric field and magnetic field. In other words, assuming that the near-field probe is The average values ​​of the electric and magnetic fields at this point can be expressed as:

[0113] Formula 22

[0114] Furthermore, by substituting Formula 22 into Formula 21, we can obtain the simplified induced voltage of the electric field and the induced voltage of the magnetic field:

[0115] Formula 23

[0116] In this embodiment, when the frequency of the incident electromagnetic wave is low, for example, when the frequency of the electromagnetic wave is less than 300 MHz, if the length L of the microstrip line is much smaller than the wavelength of the coupled electromagnetic wave, then Formula 23 can be further simplified to:

[0117] Formula 14

[0118] In this embodiment, when the incident electromagnetic wave frequency is high, for example, when the electromagnetic wave frequency is greater than 300 MHz, the formula 20 The maximum and minimum values ​​appear at periodic intervals. That is, when the incident electromagnetic wave frequency is greater than 300MHz, the value in formula 20 is The maximum and Minimum values ​​appear at periodic intervals. If the step size of the near-field scan of the microstrip line is small, then the maximum values ​​of the electric field induced voltage and magnetic field induced voltage at both ends of the microstrip line can be scanned under near-field conditions and when the frequency of the incident electromagnetic wave is high:

[0119] Formula 24

[0120] in, and It represents the maximum value of the electric and magnetic fields obtained when performing near-field scanning on the microstrip line.

[0121] The method for obtaining the target near-field voltage provided in this embodiment is based on near-field electromagnetic field data and a preset Taylor model to determine the target near-field voltage. Since the near-field electromagnetic field data is obtained based on experimental data of near-field scanning, and the preset Taylor model is a physical model commonly used in the electromagnetic field, the determined target near-field voltage is more accurate, further increasing the accuracy of the determined target far-field voltage.

[0122] In one embodiment, Figure 4 A flowchart of a method for determining a far-field voltage when the frequency of an incident wave is low provided in an embodiment of the present application. The method may include the following steps:

[0123] S10, performing near-field scanning on the object to be scanned to obtain near-field electromagnetic field data.

[0124] S20. Obtain a target near-field voltage according to the near-field electromagnetic field data and a preset Taylor model; the target near-field voltage includes an induced voltage of a low-frequency electric field and an induced voltage of a low-frequency magnetic field under near-field conditions, and a maximum induced voltage of a high-frequency electric field and a maximum induced voltage of a high-frequency magnetic field under near-field conditions.

[0125] S30, determining a low-frequency mapping relationship according to the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor, and the second correction factor.

[0126] S40, determining a target low-frequency far-field voltage according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field, and a low-frequency mapping relationship.

[0127] In this case, Figure 5 A flowchart of a method for determining a far-field voltage when the frequency of an incident wave is high provided in an embodiment of the present application. The method may include the following steps:

[0128] S11, performing near-field scanning on the object to be scanned to obtain near-field electromagnetic field data.

[0129] S21. Obtain a target near-field voltage based on near-field electromagnetic field data and a preset Taylor model; the target near-field voltage includes the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field under near-field conditions, and the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field under near-field conditions.

[0130] S31, determining a high-frequency mapping relationship according to a high-frequency electric field induced voltage maximum value parameter, a high-frequency magnetic field induced voltage maximum value parameter, a first correction factor, a second correction factor, a third correction factor, and a fourth correction factor.

[0131] S41. Determine a target high-frequency far-field voltage according to a maximum value of an induced voltage of a high-frequency electric field, a maximum value of an induced voltage of a high-frequency magnetic field, and a high-frequency mapping relationship.

[0132] The method for determining the target far-field voltage provided in the present embodiment performs a near-field scan on the object to be scanned to obtain near-field electromagnetic field data, further obtains the target near-field voltage based on the near-field electromagnetic field data, and determines the target far-field voltage based on the obtained target near-field voltage, the mapping relationship between the near-field voltage and the far-field voltage. Since the above-mentioned target far-field voltage is obtained based on the near-field electromagnetic field data obtained experimentally, and the target near-field voltage is obtained by analyzing the data, and further obtained based on the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage, it is determined from the perspective of infinite fitting of the conversion formula of the near-field experimental data and the near-far-field voltage, and the correction factor is adjusted to make the determined far-field formula infinitely close to the actual value, thereby improving the accuracy of determining the target far-field voltage, and thereby increasing the accuracy of the coupling effect of the far-field electromagnetic field on the device.

[0133] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0134] Based on the same inventive concept, the embodiment of the present application also provides a device for determining a far-field voltage for implementing the above-mentioned method for determining a far-field voltage. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above-mentioned method, so the specific limitations of one or more embodiments of the device for determining a far-field voltage provided below can refer to the limitations of the method for determining a far-field voltage above, and will not be repeated here.

[0135] In one embodiment, Figure 5 As shown, a device for determining a far-field voltage is provided, comprising a first acquisition module 201, a second acquisition module 202 and a determination module 203, wherein:

[0136] The first acquisition module 201 is used to perform near-field scanning on the object to be scanned and acquire near-field electromagnetic field data.

[0137] The second acquisition module 202 is used to acquire a target near-field voltage according to the near-field electromagnetic field data.

[0138] The determination module 203 is used to determine the target far-field voltage according to the target near-field voltage and the mapping relationship between the near-field voltage and the far-field voltage.

[0139] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0140] In one embodiment, the correction factor is determined based on the maximum electric field value and the maximum magnetic field value obtained by near-field scanning.

[0141] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0142] In one embodiment, the correction factor is used to include a first correction factor and a second correction factor, wherein the first correction factor is determined based on the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined based on the near-field incident wave amplitude, the wave impedance in a vacuum, and the magnetic field maximum value.

[0143] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0144] In one embodiment, the target near-field voltage includes the induced voltage of the low-frequency electric field and the induced voltage of the low-frequency magnetic field under the near-field condition, and the determination module 203 includes: a first determination unit. The first determination unit is used to determine the target low-frequency far-field voltage according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship; wherein the low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0145] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0146] In one embodiment, the target near-field voltage includes the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field under near-field conditions, and the correction factor also includes a third correction factor and a fourth correction factor; the determination module 203 includes: a second determination unit. The second determination unit is used to determine the target high-frequency far-field voltage according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship; the high-frequency mapping relationship is a relationship formula including the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor, the third correction factor is determined according to the speed of light in vacuum, the angular frequency and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0147] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0148] In one embodiment, the second acquisition module 202 includes: an acquisition unit, wherein the acquisition unit is used to acquire the target near-field voltage according to the near-field electromagnetic field data and a preset Taylor model.

[0149] The failure detection device for parallel programs provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, which will not be repeated here.

[0150] Each module in the above-mentioned device for determining far-field voltage can be implemented in whole or in part by software, hardware, or a combination thereof. Each of the above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each of the above modules.

[0151] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Figure 6 As shown. The computer device includes a processor, a memory, a communication interface, a display screen and an input device connected through a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be achieved through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for determining a far-field voltage is implemented. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covered on the display screen, or a key, trackball or touchpad set on the computer device housing, or an external keyboard, touchpad or mouse, etc.

[0152] Those skilled in the art will understand that Figure 6 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0153] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0154] Perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data;

[0155] According to the near-field electromagnetic field data, the target near-field voltage is obtained;

[0156] The target far-field voltage is determined according to the target near-field voltage and the mapping relationship between the near-field voltage and the far-field voltage.

[0157] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0158] The correction factor is determined based on the maximum electric field and the maximum magnetic field obtained by near-field scanning.

[0159] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0160] The correction factor includes a first correction factor and a second correction factor, wherein the first correction factor is determined according to the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined according to the near-field incident wave amplitude, the wave impedance in vacuum and the magnetic field maximum value.

[0161] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0162] The target low-frequency far-field voltage is determined according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship, wherein the low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0163] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0164] The target high-frequency far-field voltage is determined according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship. The high-frequency mapping relationship is a relationship formula including the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor, the third correction factor is determined according to the speed of light in vacuum, the angular frequency and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0165] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0166] The target near-field voltage is obtained according to the near-field electromagnetic field data and the preset Taylor model.

[0167] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0168] Perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data;

[0169] According to the near-field electromagnetic field data, the target near-field voltage is obtained;

[0170] The target far-field voltage is determined according to the target near-field voltage and the mapping relationship between the near-field voltage and the far-field voltage.

[0171] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0172] The correction factor is determined based on the maximum electric field and the maximum magnetic field obtained by near-field scanning.

[0173] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0174] The correction factor includes a first correction factor and a second correction factor, wherein the first correction factor is determined according to the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined according to the near-field incident wave amplitude, the wave impedance in vacuum and the magnetic field maximum value.

[0175] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0176] The target low-frequency far-field voltage is determined according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship, wherein the low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0177] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0178] The target high-frequency far-field voltage is determined according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship. The high-frequency mapping relationship is a relationship formula including the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor, the third correction factor is determined according to the speed of light in vacuum, the angular frequency and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0179] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0180] The target near-field voltage is obtained according to the near-field electromagnetic field data and the preset Taylor model.

[0181] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0182] Perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data;

[0183] According to the near-field electromagnetic field data, the target near-field voltage is obtained;

[0184] The target far-field voltage is determined according to the target near-field voltage and the mapping relationship between the near-field voltage and the far-field voltage.

[0185] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0186] The correction factor is determined based on the maximum electric field and the maximum magnetic field obtained by near-field scanning.

[0187] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0188] The correction factor includes a first correction factor and a second correction factor, wherein the first correction factor is determined according to the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined according to the near-field incident wave amplitude, the wave impedance in vacuum and the magnetic field maximum value.

[0189] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0190] The target low-frequency far-field voltage is determined according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field and the low-frequency mapping relationship, wherein the low-frequency mapping relationship is a relationship formula including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

[0191] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0192] The target high-frequency far-field voltage is determined according to the maximum induced voltage of the high-frequency electric field, the maximum induced voltage of the high-frequency magnetic field and the high-frequency mapping relationship. The high-frequency mapping relationship is a relationship formula including the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor, the third correction factor is determined according to the speed of light in vacuum, the angular frequency and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

[0193] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0194] The target near-field voltage is obtained according to the near-field electromagnetic field data and the preset Taylor model.

[0195] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties.

[0196] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0197] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0198] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for determining far-field voltage, characterized in that: The method comprises: Perform near-field scanning on the object to be scanned to obtain near-field electromagnetic field data; Acquiring a target near-field pressure according to the near-field electromagnetic field data; Determining a target far-field voltage according to the target near-field voltage and a mapping relationship between the near-field voltage and the far-field voltage; The mapping relationship is determined according to a far-field voltage acquisition method and a near-field voltage acquisition method, and the mapping relationship includes a correspondence between far-field voltage parameters, near-field voltage parameters and correction factors.

2. The method according to claim 1, characterized in that The correction factor is determined according to the maximum electric field and the maximum magnetic field obtained by near-field scanning.

3. The method according to claim 2, characterized in that The correction factor includes a first correction factor and a second correction factor, wherein the first correction factor is determined according to the near-field incident wave amplitude and the electric field maximum value, and the second correction factor is determined according to the near-field incident wave amplitude, the wave impedance in a vacuum, and the magnetic field maximum value.

4. The method according to claim 3, characterized in that The target near-field voltage includes an induced voltage of a low-frequency electric field and an induced voltage of a low-frequency magnetic field under a near-field condition; and determining the target far-field voltage according to a mapping relationship between the target near-field voltage, the near-field voltage, and the far-field voltage includes: Determining a target low-frequency far-field voltage according to the induced voltage of the low-frequency electric field, the induced voltage of the low-frequency magnetic field, and a low-frequency mapping relationship; The low-frequency mapping relationship is a relational expression including the induced voltage parameter of the low-frequency electric field, the induced voltage parameter of the low-frequency magnetic field, the first correction factor and the second correction factor.

5. The method according to claim 3, characterized in that: The target near-field voltage includes the maximum induced voltage of the high-frequency electric field and the maximum induced voltage of the high-frequency magnetic field under the near-field condition, and the correction factor also includes a third correction factor and a fourth correction factor; and determining the target far-field voltage according to the mapping relationship between the target near-field voltage, the near-field voltage and the far-field voltage includes: Determining a target high-frequency far-field voltage according to the maximum value of the induced voltage of the high-frequency electric field, the maximum value of the induced voltage of the high-frequency magnetic field, and a high-frequency mapping relationship; Among them, the high-frequency mapping relationship is a relationship between the maximum induced voltage parameter of the high-frequency electric field, the maximum induced voltage parameter of the high-frequency magnetic field, the first correction factor, the second correction factor, the third correction factor and the fourth correction factor, the third correction factor is determined according to the speed of light in a vacuum, the angular frequency, and the length of the microstrip line, and the fourth correction factor is determined according to the relative dielectric constant and the equivalent dielectric constant of the microstrip line.

6. The method according to claims 1-5, characterized in that: Acquiring a target near-field voltage according to the near-field electromagnetic field data includes: The target near-field voltage is obtained according to the near-field electromagnetic field data and a preset Taylor model.

7. A device for determining far-field voltage, characterized in that: The device comprises: A first acquisition module is used to perform near-field scanning on the object to be scanned and acquire near-field electromagnetic field data; A second acquisition module, used to acquire a target near-field voltage according to the near-field electromagnetic field data; A determination module, configured to determine a target far-field voltage according to the target near-field voltage and a mapping relationship between the near-field voltage and the far-field voltage; The mapping relationship is determined according to a far-field voltage acquisition method and a near-field voltage acquisition method, and the mapping relationship includes a correspondence between far-field voltage parameters, near-field voltage parameters and correction factors.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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