Display device

Abstract

On the thin film transistor layer, a first wiring layer, a first planarization film, a second wiring layer, and a second planarization film are sequentially stacked, and between the display region and the first barrier wall, a first slit that penetrates the first planarization film and the second planarization film is provided in a frame shape on the first planarization film and the second planarization film, and in the first slit, a rim portion of a first bezel wiring (21h) of the first wiring layer and a rim portion of a second bezel wiring (21i) of the first wiring layer that face each other are covered by a protective film (23a) composed of an inorganic insulating film that constitutes the thin film transistor layer.

Description

Technical Field

[0001] The present invention relates to a display device. Background Art

[0002] In recent years, self-luminous organic EL displays using organic electroluminescence (EL) elements have attracted attention as an alternative to liquid crystal displays. To prevent degradation of the organic EL elements due to the intrusion of moisture, oxygen, and the like, a sealing structure has been proposed in which a sealing film covering the organic EL element is formed using a laminated film of inorganic and organic films.

[0003] For example, Patent Document 1 discloses a display device including a thin film sealing layer covering an organic light-emitting element. The thin film sealing layer has a laminated structure in which inorganic film layers formed by CVD (chemical vapor deposition) and organic film layers formed by inkjet are alternately arranged.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-86415 Summary of the Invention

[0007] Technical problems to be solved by the present invention

[0008] However, when an organic film is formed as a sealing film using an inkjet method, as in the display device disclosed in Patent Document 1, a barrier wall is required to block the ink forming the organic film in the frame region surrounding the display region where the organic EL elements are provided. Furthermore, the organic EL display device may include, for example, a resin substrate; a thin film transistor (TFT) layer provided on the resin substrate; and an organic EL element layer provided on the TFT layer. The TFT layer may include a frame wiring provided in the frame region, and a planarization film provided on the frame wiring and having a flat surface in the display region. Furthermore, the organic EL element layer may include, for example, a plurality of first electrodes, an edge mask, a plurality of organic EL layers, and a second electrode provided in sequence on the planarization film. Furthermore, when the barrier wall is formed of the same material and in the same layer as the planarization film, the frame wiring may be damaged by the developer used to form the planarization film, the etching solution used to form the first electrodes, and the developer used to form the edge mask, resulting in, for example, an eave-shaped end portion of the cross-sectional shape of the frame wiring. This may reduce the sealing performance of the sealing film formed on the frame wiring, potentially degrading the organic EL elements.

[0009] The present application was accomplished in view of this point, and aims at suppressing damage received in a manufacturing process of a bezel wiring.

[0010] Technical solution for solving technical problems

[0011] To achieve the above object, a display device of the present application comprises: a base substrate; a thin film transistor layer provided on the base substrate, sequentially laminated with a first wiring layer, a first planarization film, a second wiring layer, and a second planarization film; a light emitting element layer provided on the thin film transistor layer, corresponding to a plurality of sub-pixels constituting a display region, and sequentially laminated with a plurality of first electrodes, a common edge cover, a plurality of light emitting layers, and a common second electrode; a sealing film provided in a manner of covering the light emitting element layer, and sequentially laminated with a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film; a first barrier wall in a bezel region around the display region, the first barrier wall surrounding the display region, and provided in a frame shape in a manner of overlapping with a peripheral end portion of the organic sealing film; a power supply line provided as the second wiring layer in the display region; a first bezel wiring provided as the first wiring layer in the bezel region in a manner of extending along a terminal portion of an end portion of the bezel region, and electrically connected with the power supply line; and a second bezel wiring provided as the first wiring layer in the bezel region in a manner of extending to the terminal portion, electrically connected with the second electrode through a conductive layer formed in the same layer as the first electrodes from the same material, and in the display region and between the first barrier wall, a first slit penetrating the first planarization film and the second planarization film is provided in a frame shape, in the first slit, a peripheral portion of the first bezel wiring and a peripheral portion of the second bezel wiring opposite to each other are covered with a protective film, and the protective film is composed of an inorganic insulating film constituting the thin film transistor layer.

[0012] Advantageous effects

[0013] According to the present application, damage received in a manufacturing process of a bezel wiring can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a plan view showing a schematic configuration of an organic EL display device of a first embodiment of the present application.

[0015] Figure 2 is a plan view schematically showing a configuration of a first bezel wiring, a second bezel wiring, a groove, a first barrier wall, a second barrier wall, and the like in the organic EL display device of the first embodiment of the present application.

[0016] Figure 3is a plan view of a display region of the organic EL display device of the first embodiment of the present application.

[0017] Figure 4 is a cross-sectional view of the display region of the organic EL display device along the IV-IV line in Figure 1 .

[0018] Figure 5 is an equivalent circuit diagram of the TFT layer constituting the organic EL display device of the first embodiment of the present application.

[0019] Figure 6 is a cross-sectional view of the organic EL layer constituting the organic EL display device of the first embodiment of the present application.

[0020] Figure 7 is a cross-sectional view of the frame region of the organic EL display device along the VII-VII line in Figure 2 .

[0021] Figure 8 is a cross-sectional view of the frame region of the organic EL display device along the VIII-VIII line in Figure 2 .

[0022] Figure 9 is a cross-sectional view of the frame region of the organic EL display device along the IX-IX line in Figure 2 .

[0023] Figure 10 is a plan view schematically showing the arrangement of the first frame wiring, the second frame wiring, the trench, the first barrier wall, the second barrier wall, and the like in the modified example of the organic EL display device of the first embodiment of the present application, and is a view corresponding to Figure 2 .

[0024] Figure 11 is a cross-sectional view of the display region of the organic EL display device of the second embodiment of the present application, and is a view corresponding to Figure 4 .

[0025] Figure 12 is a cross-sectional view of the frame region of the organic EL display device of the second embodiment of the present application, and is a view corresponding to Figure 7 .

[0026] Figure 13 is a cross-sectional view of the frame region of the organic EL display device of the second embodiment of the present application, and is a view corresponding to Figure 8 .

[0027] Figure 14 is a cross-sectional view of the display region of the organic EL display device of the third embodiment of the present application, and is a view corresponding to Figure 4 .

[0028] Figure 15 is a cross-sectional view of a frame region of an organic EL display device of the third embodiment of the present application, and is a view corresponding to Figure 7 .

[0029] Figure 16 is a cross-sectional view of a frame region of an organic EL display device of the third embodiment of the present application, and is a view corresponding to Figure 8 .

[0030] Figure 17 is a cross-sectional view of a frame region of an organic EL display device of the third embodiment of the present application, and is a view corresponding to Figure 9 .

[0031] Figure 18 is a cross-sectional view of a display region of an organic EL display device of the fourth embodiment of the present application, and is a view corresponding to Figure 4 .

[0032] Figure 19 is a cross-sectional view of a frame region of an organic EL display device of the fourth embodiment of the present application, and is a view corresponding to Figure 7 .

[0033] Figure 20 is a cross-sectional view of a frame region of an organic EL display device of the fourth embodiment of the present application, and is a view corresponding to Figure 8 .

[0034] Figure 21 is a plan view schematically showing the arrangement of a first frame wiring, a second frame wiring, a trench, a first barrier wall, a second barrier wall, and the like in an organic EL display device of the fifth embodiment of the present application, and is a view corresponding to Figure 2 .

[0035] Figure 22 is a cross-sectional view of a frame region of an organic EL display device along the line XXII-XXII in Figure 21 . DETAILED DESCRIPTION

[0036] Hereinafter, the embodiments of the present application will be explained in detail based on the drawings. Note that the present application is not limited to the following embodiments.

[0037] FIRST EMBODIMENT

[0038] Figures 1 to 10 A first embodiment of a display device of the present application is shown. In each of the following embodiments, an organic EL display device having an organic EL element layer is exemplified as a display device having a light-emitting element layer. Herein, Figure 1is a plan view that schematically shows the outline configuration of the organic EL display device 50a of the present embodiment. Further, Figure 2 is a plan view that schematically shows the configuration of the first bezel wiring 21h, the second bezel wiring 21i, the trench G, the first barrier wall Wa, the second barrier wall Wb, and the like in the organic EL display device 50a. Further, Figure 3 is a plan view of the display region D of the organic EL display device 50a. Further, Figure 4 is a cross-sectional view of the display region D of the organic EL display device 50a along the IV-IV line in Figure 1 . Further, Figure 5 is an equivalent circuit diagram of the TFT layer 30a that configures the organic EL display device 50a. Further, Figure 6 is a cross-sectional view of the organic EL layer 33 that configures the organic EL display device 50a. Further, Figure 7 , Figure 8 , and Figure 9 are cross-sectional views of the bezel region F of the organic EL display device 50a along the VII-VII line, the VIII-VIII line, and the IX-IX line in Figure 2 . Further, Figure 10 is a plan view that schematically shows the configuration of the first bezel wiring 21h, the second bezel wiring 21i, the trench G, the first barrier wall Wa, the second barrier wall Wb, and the like in a modification example of the organic EL display device 50a, and is a view corresponding to Figure 2 .

[0039] As shown in Figure 1 , the organic EL display device 50a has, for example, a display region D that is provided in a rectangular shape and performs image display, and a bezel region F that is provided in a rectangular frame shape around the display region D. Note that in the present embodiment, a rectangular display region D is exemplified, but the rectangle also includes, for example, a shape in which the sides are in a circular arc shape, a shape in which the corners are in a circular arc shape, a shape in which a part of the sides has a notch, and the like that are substantially rectangular.

[0040] In the display region D, as shown in Figure 3 , a plurality of sub-pixels P are arranged in a matrix shape. Further, in the display region D, as shown in Figure 3 , for example, a sub-pixel P having a red light-emitting region Er that performs red display, a sub-pixel P having a green light-emitting region Eg that performs green display, and a sub-pixel P having a blue light-emitting region Eb that performs blue display are provided in a manner that is adjacent to each other. Note that in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P having the red light-emitting region Er, the green light-emitting region Eg, and the blue light-emitting region Eb.

[0041] In the bezel region F of the organic EL display device 50a, Figure 1The terminal portion T extends in one direction (the lateral direction in the drawing) from the lower end portion in the display region D. Further, in the frame region F, as shown in Figure 1 , a bending portion B that can bend by 180° (U-shaped) with the lateral direction in the drawing as the axis of bending is provided so as to extend in one direction (the lateral direction in the drawing). Further, on the terminal portion T, a plurality of terminals are arranged in the direction of extension of the terminal portion T. Further, in the frame region F, as shown in Figure 1 , Figure 2 , Figure 7 and Figure 8 , a trench G in the shape of a rectangular frame in plan view is provided so as to pass through the first planarization film 22a and the second planarization film 28a. Further, as shown in Figure 7 , the trench G has a first trench Ga formed in the first planarization film 22a and a second trench Gb formed in the second planarization film 28a.

[0042] As shown in Figure 4 , the organic EL display device 50a has a resin substrate layer 10 provided as a base substrate, a TFT layer 30a provided on the resin substrate layer 10, an organic EL element layer 35 provided as a light emitting element layer on the TFT layer 30a, and a sealing film 40 provided so as to cover the organic EL element layer 35.

[0043] The resin substrate layer 10 is composed of, for example, a polyimide resin or the like.

[0044] As shown in Figure 4 , the TFT layer 30a has a primer film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a provided on the primer film 11, a plurality of second TFTs 9b (see Figure 5 ), a plurality of third TFTs 9c, and a plurality of capacitors 9d. Further, as shown in Figure 4 , the TFT layer 30a has a first planarization film 22a, a protective film 23a, and a second planarization film 28a provided in this order on each first TFT 9a, each second TFT 9b, each third TFT 9c, and each capacitor 9d.

[0045] In the TFT layer 30a, as shown in Figure 4As shown, semiconductor layers 12a and 12b, a gate insulating film 13, gates 14a and 14b, a lower wiring layer 14c (first electrode layer), a first interlayer insulating film 15, an upper wiring layer 16a (second electrode layer), a second interlayer insulating film 17, source electrodes 21a and 21c, drain electrodes 21b and 21d (first wiring layer), a first planarizing film 22a, a protective film 23a, a power supply line 27a and a relay electrode 27b (second wiring layer), and a second planarizing film 28a are sequentially stacked on the base coat film 11.

[0046] In the TFT layer 30a, in the display region D, as shown in FIG. Figure 3 and Figure 5 As shown in FIG. 1 , a plurality of gate lines 14d are provided so as to extend parallel to each other in the horizontal direction in the figure. Figure 3 and Figure 5 As shown in FIG. 1 , a plurality of light emission control lines 14e are provided so as to extend in parallel with each other in the horizontal direction of the figure. In addition, the gate lines 14d and the light emission control lines 14e are formed of the same material and in the same layer as the gates 14a and 14b and the lower wiring layer 14c, and are provided together with the gates 14a and 14b and the lower wiring layer 14c as the first electrode layer. Figure 3 As shown, each light emitting control line 14e is arranged adjacent to each gate line 14d. In addition, in the TFT layer 30a, in the display area D, as shown in FIG. Figure 3 and Figure 5 As shown in FIG. 1 , a plurality of source lines 21f are provided so as to extend parallel to each other in the longitudinal direction of the figure. The source lines 21f are formed of the same material and in the same layer as the source electrodes 21a and 21c and the drain electrodes 21b and 21d, and are provided as a first wiring layer together with the source electrodes 21a and 21c and the drain electrodes 21b and 21d. In addition, in the TFT layer 30a, in the display area D, as shown in FIG. Figure 1 As shown in FIG. 1 , the power supply line 27a is arranged in a grid pattern as the second wiring layer. Figure 4 As shown, the power supply line 27a includes a lower metal film 24a, a middle metal film 25a, and an upper metal film 26a sequentially stacked on the protective film 23a. Figure 5 As shown, in each sub-pixel P, a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d are provided.

[0047] The undercoat film 11 is composed of a single layer or a stacked layer of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

[0048] like Figure 5 As shown, the first TFT 9a is electrically connected to the corresponding gate line 14d, source line 21f and second TFT 9b in each sub-pixel P. Figure 4 As shown, the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 21a, and a drain electrode 21b, which are sequentially provided on the primer film 11. Figure 4 As shown, the semiconductor layer 12a is provided in an island shape on the base coat film 11, and as described later, has a channel region, a source region, and a drain region. In addition, the semiconductor layer 12a and the semiconductor layer 12b described later are formed of, for example, a low-temperature polysilicon film, an In-Ga-Zn-O-based oxide semiconductor film, etc. In addition, as Figure 4 As shown in FIG. 1 , the gate insulating film 13 is provided so as to cover the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the gate electrode 14a is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14a. Figure 4 As shown in FIG. 1 , the source electrode 21a and the drain electrode 21b are provided on the second interlayer insulating film 17 in a manner separated from each other. Figure 4 As shown, the source electrode 21a and the drain electrode 21b are electrically connected to the source region and the drain region of the semiconductor layer 12a via contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17. Figure 4 As shown, the source 21a includes a lower metal film 18a, a middle metal film 19a, and an upper metal film 20a stacked in sequence on the second interlayer insulating film 17. Figure 4 As shown, the drain electrode 21b includes a lower metal film 18b, a middle metal film 19b, and an upper metal film 20b stacked in sequence on the second interlayer insulating film 17. The lower metal films 18a, 18b, 20a, and 20b, as well as the lower metal films 18c, 18d, 20c, and 20d (described later), are composed of, for example, titanium-based metal films such as titanium films or titanium alloy films. The middle metal films 19a, 19b, and 19c, 19d (described later), are composed of, for example, aluminum-based metal films such as aluminum films or aluminum alloy films. The gate insulating film 13, the first interlayer insulating film 15, the second interlayer insulating film 17, and the protective film 23a are composed of, for example, single-layer films or stacked films of inorganic insulating films such as silicon nitride, silicon oxide, or silicon oxynitride.

[0049] like Figure 5As shown, the second TFT 9b is electrically connected to the corresponding first TFT 9a, power supply line 27a, and third TFT 9c in each sub-pixel P. The second TFT 9b has substantially the same structure as the first TFT 9a and the third TFT 9c described later.

[0050] like Figure 5 As shown, the third TFT 9c is electrically connected to the corresponding second TFT 9b, the power supply line 27a and the light emission control line 14e in each sub-pixel P. Figure 4 As shown, the third TFT 9c includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 21c, and a drain electrode 21d, which are sequentially provided on the primer film 11. Figure 4 As shown in FIG. 1 , the semiconductor layer 12b is provided in an island shape on the base coat film 11 and has a channel region, a source region, and a drain region similarly to the semiconductor layer 12a. Figure 4 As shown in FIG. 1 , the gate insulating film 13 is provided in a manner covering the semiconductor layer 12 b. Figure 4 As shown in FIG. 1 , the gate electrode 14b is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12b. Figure 4 As shown in FIG. 1 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14b. Figure 4 As shown in FIG. 1 , the source electrode 21c and the drain electrode 21d are provided in a manner separated from each other on the second interlayer insulating film 17. Figure 4 As shown, the source electrode 21c and the drain electrode 21d are electrically connected to the source region and the drain region of the semiconductor layer 12b respectively through contact holes formed in the stacked film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17. Figure 4 As shown, the source 21c includes a lower metal film 18c, a middle metal film 19c, and an upper metal film 20c sequentially stacked on the second interlayer insulating film 17. Figure 4 As shown, the drain electrode 21d is electrically connected to the relay electrode 27b via a contact hole formed in the first planarization film 22a and the protection film 23a. Figure 4 As shown, the drain electrode 21d includes a lower metal film 18d, a middle metal film 19d, and an upper metal film 20d sequentially stacked on the second interlayer insulating film 17. In addition, the relay electrode 27b is provided as a second wiring layer. Figure 4indicates that the lower metal film 24b, the middle metal film 25b, and the upper metal film 26b are sequentially stacked on the protective film 23a. In addition, the lower metal film 24b and the upper metal film 26b, and the lower metal film 24a and the upper metal film 26a are, for example, composed of a titanium film, a titanium alloy film, or the like. Further, the middle metal film 25b and the middle metal film 25a are, for example, composed of an aluminum film, an aluminum alloy film, or the like.

[0051] In addition, in the present embodiment, the first TFT 9a, the second TFT 9b, and the third TFT 9c are illustrated as top gate type, but the first TFT 9a, the second TFT 9b, and the third TFT 9c can be bottom gate type.

[0052] As Figure 5 indicated, the capacitor 9d is electrically connected to the corresponding first TFT 9a and the power supply line 27a in each sub-pixel P. Here, as Figure 4 indicated, the capacitor 9d includes the lower wiring layer 14c provided as a first electrode layer, the first interlayer insulating film 15 provided so as to cover the lower wiring layer 14c, and the upper wiring layer 16a provided on the first interlayer insulating film 15 so as to overlap the lower wiring layer 14c as a second electrode layer. In addition, the upper wiring layer 16a is electrically connected to the power supply line 27a via a contact hole (not shown) formed in the second interlayer insulating film 17, the first planarization film 22a, and the protective film 23a.

[0053] The first planarization film 22a, the second planarization film 28a, and the edge cover 32a described later are, for example, composed of an organic resin material such as a polyimide resin, an acrylic resin, a novolak resin, or the like.

[0054] The organic EL element layer 35 is composed of a plurality of organic EL elements arranged in a matrix shape, as Figure 4 indicated, includes a plurality of first electrodes 31a, the edge cover 32a, a plurality of organic EL layers 33, and a second electrode 34 provided in this order on the TFT layer 30a.

[0055] As Figure 4 indicated, the plurality of first electrodes 31a are provided on the second planarization film 28a in a matrix shape in a manner corresponding to the plurality of sub-pixels P. Here, as Figure 4As shown, the first electrode 31a is electrically connected to the drain electrode 21d of the third TFT 9c via contact holes formed in the first planarizing film 22a and the protective film 23a, the relay electrode 27b, and a contact hole formed in the second planarizing film 28a. Furthermore, the first electrode 31a has the function of injecting holes (positive holes) into the organic EL layer 33. Furthermore, to improve the efficiency of hole injection into the organic EL layer 33, it is preferable to form the first electrode 31a from a material with a high work function. Examples of materials constituting the first electrode 31a include metal materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). Alternatively, the material constituting the first electrode 31a may be, for example, an alloy of astatine (At) / astatine oxide (AtO2). Furthermore, the material constituting the first electrode 31a may be, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the first electrode 31a may be formed by stacking multiple layers of the above materials. Examples of compound materials with a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

[0056] like Figure 4 As shown, the edge cover 32 a is provided in a lattice pattern so as to cover the peripheral end portions of each first electrode 31 a in a manner common to a plurality of sub-pixels P.

[0057] like Figure 4 As shown, a plurality of organic EL layers 33 are arranged on each first electrode 31a and arranged in a matrix in a manner corresponding to a plurality of sub-pixels P. Figure 6 As shown, each organic EL layer 33 includes a hole injection layer 1 , a hole transport layer 2 , a light emitting layer 3 , an electron transport layer 4 , and an electron injection layer 5 stacked in this order on a first electrode 31 a .

[0058] The hole injection layer 1, also known as an anode buffer layer, has the function of bringing the energy levels of the first electrode 31 a and the organic EL layer 33 closer together, thereby improving the efficiency of hole injection from the first electrode 31 a to the organic EL layer 33. Examples of materials constituting the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.

[0059] The hole transport layer 2 has a function of improving the efficiency of hole transport from the first electrode 31 a to the organic EL layer 33. Examples of materials constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, amorphous hydrogenated silicon carbide, zinc sulfide, and zinc selenide.

[0060] The light emitting layer 3 is a region where holes and electrons are injected from the first electrode 31a and the second electrode 34 and recombine when voltage is applied thereto. The light emitting layer 3 is formed of a material with high light emission efficiency. In addition, as materials constituting the light-emitting layer 3, for example, metal hydroxyquinolinone (oxinoid) compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bis(styryl)benzene derivatives, tristyrylbenzene derivatives, perylene derivatives, pyrene ketone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, acridine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly(p-phenylene vinylene), or polysilanes, etc. can be listed.

[0061] The electron transport layer 4 has the function of efficiently transferring electrons to the light-emitting layer 3. Examples of materials constituting the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metalloquinolone (8-hydroxyquinoline metal complex) compounds.

[0062] The electron injection layer 5 has the function of bringing the energy levels of the second electrode 34 and the organic EL layer 33 closer together, thereby improving the efficiency of electron injection from the second electrode 34 to the organic EL layer 33. This function can reduce the driving voltage of each organic EL element constituting the organic EL element layer 35. The electron injection layer 5 is also called a cathode buffer layer. Examples of materials constituting the electron injection layer 5 include inorganic alkaline compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), aluminum oxide (Al2O3), and strontium oxide (SrO).

[0063] like Figure 4 As shown, the second electrode 34 is provided to cover each organic EL layer 33 and the edge cover 32a in a manner shared by multiple sub-pixels P. Furthermore, the second electrode 34 has the function of injecting electrons into the organic EL layer 33. Furthermore, to improve the efficiency of electron injection into the organic EL layer 33, the second electrode 34 is preferably formed of a material with a low work function. Examples of materials for the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Alternatively, the second electrode 34 may be formed of, for example, an alloy of magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Alternatively, the second electrode 34 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the second electrode 34 may be formed by stacking multiple layers of the above materials. In addition, as materials with a small work function, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al), etc.

[0064] like Figure 4As shown, the sealing film 40 includes a first inorganic sealing film 36, an organic sealing film 37, and a second inorganic sealing film 38, which are provided to cover the second electrode 34 and are sequentially stacked on the second electrode 34. The sealing film 40 has the function of protecting the organic EL layers 33 of the organic EL element layer 35 from moisture and oxygen. Here, the first inorganic sealing film 36 and the second inorganic sealing film 38 are composed of, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film. Furthermore, the organic sealing film 37 is composed of, for example, an organic resin material such as an acrylic resin, an epoxy resin, a silicone resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

[0065] In addition, if Figure 1 and Figure 2 As shown, the organic EL display device 50a has a first frame wiring 21h, which extends in a strip shape with a relatively wide width along the central part of the lower side of the display area D in the figure in the frame area F, extends in a strip shape with a relatively narrow width along the two end parts of the lower side of the display area D in the figure, and extends to the terminal part T at the two end parts on the opposite side of the display area D of the wider width portion. Here, the first frame wiring 21h is electrically connected to the power line 27a on the display area D side of the frame area F, and a high power supply voltage (ELVDD) is input to the terminal part T. In addition, the first frame wiring 21h is provided as a first wiring layer, as shown in FIG. Figure 8 and Figure 9 As shown, a lower metal film 18h, a middle metal film 19h and an upper metal film 20h are sequentially stacked on the second interlayer insulating film 17, and are formed of the same material and in the same layer as the source electrodes 21a and 21c and the drain electrodes 21b and 21d.

[0066] In addition, if Figure 1 as well as Figure 2 As shown, the organic EL display device 50a includes a second frame wiring 21i, which is provided in a substantially C-shaped manner outside the groove G in the frame region F, and has both ends extending to the terminal portion T. Figure 7 As shown, the second frame wiring 21i is electrically connected to the second electrode 34 via the conductive layer 31b formed in the groove G, and is configured to input the low power supply voltage (ELVSS) at the terminal portion T. In addition, the second frame wiring 21i is provided as a first wiring layer, as shown in FIG. Figure 7 and Figure 9 As shown, a lower metal film 18i, a middle metal film 19i and an upper metal film 20i are sequentially stacked on the second interlayer insulating film 17, and are formed of the same material and in the same layer as the source electrodes 21a and 21c and the drain electrodes 21b and 21d. Figure 7As shown, the conductive layer 31b and the first electrode 31a are formed of the same material in the same layer, and are provided inside the trench G in a state of contacting each other with the second electrode 34, thereby electrically connecting the second frame wiring 21i and the second electrode 34.

[0067] Further, as shown in Figure 1 and Figure 2 , the organic EL display device 50a includes, in the frame region F, a first barrier wall Wa provided in a frame shape outside the trench G so as to surround the display region D, and a second barrier wall Wb provided in a frame shape around the first barrier wall Wa.

[0068] As shown in Figure 7 , the first barrier wall Wa includes a first metal protrusion 27c provided as a second wiring layer, an inner lower layer resin layer 28c provided on the first metal protrusion 27c as a first resin protrusion, formed of the same material in the same layer as the second planarization film 28a, an inner upper layer resin layer 32c provided on the inner lower layer resin layer 28c as a third resin protrusion, formed of the same material in the same layer as the edge cover 32a, and a conductive layer 31b interposed therebetween. Here, the first barrier wall Wa is provided so as to overlap with the peripheral end portion of the organic sealing film 37 of the sealing film 40, and is configured so as to suppress diffusion of the ink of the organic sealing film 37 of the sealing film 40. Further, in the first planarization film 22a and the second planarization film 28a, as shown in Figure 2 , Figure 7 and Figure 8 , a first slit Sa penetrating the first planarization film 22a and the second planarization film 28a is provided in a frame shape between the display region D and the first barrier wall Wa. In addition, in the first slit Sa, the edge portions of the first frame wiring 21h and the second frame wiring 21i, which are opposed to each other, are covered with the protective film 23a (see Figure 9 ). Further, the first metal protrusion 27c is provided so as to be electrically connected to the first frame wiring 21h or the second frame wiring 21i. In addition, as shown in Figure 2 , the first metal protrusion 27c electrically connected to the first frame wiring 21h is provided so as to extend along a part (middle portion) of one side (lower side in the drawing) of the display region D, which is one side of the display region along the terminal portion T. Further, as shown in Figure 2 , the first metal protrusion 27c electrically connected to the second frame wiring 21i is provided so as to extend along the other part (both end portions) of the one side (lower side in the drawing) of the display region D, which is one side of the display region along the terminal portion T, and along three sides (left side, right side, and upper side in the drawing) of the display region D, which are three sides of the display region D not along the terminal portion T. In addition, as shown in Figure 7As shown, the first metal protrusion 27 c includes a lower metal film 24 c , a middle metal film 25 c , and an upper metal film 26 c stacked in this order on the protective film 23 a .

[0069] like Figure 7 As shown, the second barrier wall Wb includes: a second metal protrusion 27d provided as a second wiring layer; an outer lower resin layer 28d provided on the second metal protrusion 27d as a second resin protrusion and formed of the same material and on the same layer as the second planarizing film 28a; and an outer upper resin layer 32d provided on the outer lower resin layer 28d as a fourth resin protrusion via a conductive layer 31b and formed of the same material and on the same layer as the edge cover 32a. Figure 2 、 Figure 7 and Figure 8 As shown in FIG. 2 , in the second planarizing film 28a, between the first barrier wall Wa and the second barrier wall Wb, a second slit Sb penetrating the second planarizing film 28a is provided in a frame shape. Figure 9 As shown, in the second slit Sb, the edge of the first frame wiring 21h and the edge of the second frame wiring 21i facing each other are covered by the protective film 23a. In addition, the second metal protrusion 27d is provided in a manner electrically connected to the first frame wiring 21h or the second frame wiring 21i. Figure 2 As shown, the second metal protrusion 27d electrically connected to the first frame wiring 21h is provided along a portion (middle portion) of one side (lower side in the figure) of the display area D along the terminal portion T. Figure 2 As shown, the second metal protrusion 27d electrically connected to the second frame wiring 21i is provided along the other parts (two ends) of one side of the display area D (the lower side in the figure) and three sides of the display area D (the left side, the right side and the upper side in the figure). The one side of the display area D is one side of the display area D along the terminal portion T, and the three sides of the display area D are three sides of the display area D that are not along the terminal portion T. In addition, as shown in FIG. Figure 7 As shown, the second metal protrusion 27d includes a lower metal film 24d, a middle metal film 25d, and an upper metal film 26d stacked in this order on the protective film 23a.

[0070] In addition, if Figure 2 As shown, the organic EL display device 50a includes a first metal layer 27e in the frame region F. The first metal layer 27e is provided in a substantially C-shaped manner as a second wiring layer between the groove G and the first slit Sa. Figure 7As shown, the first metal layer 27e includes a lower metal film 24e, a middle metal film 25e and an upper metal film 26e stacked in sequence on the protective film 23a, and the first metal layer 27e is arranged in a manner electrically connected to the second frame wiring 21i via contact holes formed in the first planarization film 22a and the protective film 23a.

[0071] In addition, if Figure 2 As shown, the organic EL display device 50a includes a terminal side metal layer 27f in the frame region F. The terminal side metal layer 27f is provided as a second wiring layer in a substantially T-shape so as to overlap with the lower side of the groove G in the figure. Figure 8 As shown, the terminal side metal layer 27f includes a lower metal film 24f, a middle metal film 25f, and an upper metal film 26f sequentially stacked on the protective film 23a. The terminal side metal layer 27f is provided in such a manner as to be electrically connected to the first frame wiring 21h via a contact hole formed in the protective film 23a inside the groove G. In addition, in this embodiment, the terminal side metal layer 27f is provided as a whole in a substantially T-shape, but as shown in FIG. Figure 10 As shown, the terminal-side metal layers 27 fa and 27 fb may be provided separately with the groove G interposed therebetween.

[0072] In addition, if Figure 7 and Figure 8 As shown, the organic EL display device 50a has a plurality of peripheral photo spacers 32b arranged in an island shape in the frame area F so as to protrude upward from both edges of the groove G. Here, the peripheral photo spacers 32b and the edge cover 32a are formed of the same material and in the same layer. In addition, the portion of the edge cover 32a that protrudes upward from the surface becomes an island-shaped pixel photo spacer. Figure 7 In FIG. 4 , the conductive layer 31 b is shown intermittently, but only the portion of the conductive layer 31 b overlapping with the peripheral photo spacer 32 b is opened and the conductive layer 31 b is formed integrally.

[0073] In the organic EL display device 50a described above, in each subpixel P, a gate signal is input to the first TFT 9a via the gate line 14d, turning the first TFT 9a on. A predetermined voltage corresponding to the source signal is written to the gate 14b of the second TFT 9b and the capacitor 9d via the source line 21f. When a light emission control signal is input to the third TFT 9c via the light emission control line 14e, the third TFT 9c turns on, and a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 27a to the organic EL layer 33, causing the light-emitting layer 3 of the organic EL layer 33 to emit light, thereby displaying an image. Furthermore, in the organic EL display device 50a, even when the first TFT 9a is turned off, the gate voltage of the second TFT 9b is maintained by the capacitor 9d. Therefore, light emission from the light-emitting layer 3 is maintained in each subpixel P until the gate signal for the next frame is input.

[0074] Next, a method for manufacturing the organic EL display device 50a of this embodiment will be described. The method for manufacturing the organic EL display device 50a of this embodiment includes a TFT layer forming step, an organic EL element layer forming step, and a sealing film forming step.

[0075] <TFT层形成工序>

[0076] First, an inorganic insulating film (about 1000 nm thick) such as a silicon oxide film is formed on the resin substrate layer 10 formed on the glass substrate by, for example, plasma CVD (Chemical Vapor Deposition) to form the primer film 11 .

[0077] Next, using the plasma CVD method, an amorphous silicon film (about 50 nm thick) is formed on the entire substrate with the primer film 11. After the amorphous silicon film is crystallized by laser annealing, etc. to form a semiconductor film of a polycrystalline silicon film, the semiconductor film is patterned to form a semiconductor layer 12a, etc.

[0078] Thereafter, an inorganic insulating film (about 100 nm) such as a silicon oxide film is formed on the entire substrate having the semiconductor layer 12 a formed thereon by plasma CVD, for example, to form the gate insulating film 13 so as to cover the semiconductor layer 12 a and the like.

[0079] Furthermore, for example, by sputtering, an aluminum film (thickness of about 350 nm) and a molybdenum nitride film (thickness of about 50 nm) are sequentially formed on the entire substrate on which the gate insulating film 13 is formed, and then these metal stacked films are patterned to form a first electrode layer such as the gate line 14d.

[0080] Next, impurity ions are doped using the first electrode layer as a mask, thereby forming a channel region, a source region, and a drain region in the semiconductor layer 12 a and the like.

[0081] Then, an inorganic insulating film (thickness: about 100 nm) such as a silicon oxide film is formed over the entire substrate on which the channel region, the source region, and the drain region are formed by, for example, a plasma CVD method, whereby a first interlayer insulating film 15 is formed.

[0082] Next, an aluminum film (thickness: about 350 nm) and a molybdenum nitride film (thickness: about 50 nm) are sequentially formed over the entire substrate on which the first interlayer insulating film 15 is formed by, for example, a sputtering method, and then these metal stacked films are patterned, whereby a second electrode layer such as the upper wiring layer 16a is formed.

[0083] Further, an inorganic insulating film (thickness: about 500 nm) such as a silicon oxide film is formed over the entire substrate on which the second electrode layer is formed by, for example, a plasma CVD method, whereby a second interlayer insulating film 17 is formed.

[0084] Then, contact holes and the like are formed by patterning the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0085] Next, a titanium film (thickness: about 30 nm), an aluminum film (thickness: about 300 nm), and a titanium film (thickness: about 50 nm) are sequentially formed over the entire substrate on which the contact holes and the like are formed by, for example, a sputtering method, and then these metal stacked films are patterned, whereby a first wiring layer such as the source line 21f is formed.

[0086] Further, a photosensitive resin film (thickness: about 2 μm) of a polyimide-based organic insulating film is applied over the entire substrate on which the first wiring layer is formed by, for example, a spin coating method or a slit coating method, and then a first planarization film 22a composed of an organic insulating film is formed by performing pre-baking, exposure, development, and post-baking on the applied film.

[0087] After that, an inorganic insulating film (thickness: about 500 nm) such as a silicon oxide film is formed over the entire substrate on which the first planarization film 22a is formed by, for example, a plasma CVD method, and then a protective film 23a is formed by patterning the inorganic insulating film.

[0088] Next, a titanium film (thickness: about 30 nm), an aluminum film (thickness: about 300 nm), and a titanium film (thickness: about 50 nm) are sequentially formed over the entire substrate on which the protective film 23a is formed by, for example, a sputtering method, and then a second wiring layer such as the power supply line 27a is formed by patterning these metal stacked films.

[0089] Finally, a polyimide-based photosensitive resin film (thickness of about 2 μm) is applied over the entire substrate on which the second wiring layer is formed, for example, by a spin coating method or a slit coating method, and a second planarization film 28a composed of an organic insulating film is formed by performing pre-baking, exposure, development, and post-baking on the applied film.

[0090] As described above, the TFT layer 30a can be formed.

[0091] <Organic EL Element Layer Formation Process>

[0092] On the second planarization film 28a of the TFT layer 30a formed in the above TFT layer formation process, a first electrode 31a, an edge cover 32a, an organic EL layer 33 (hole injection layer 1, hole transport layer 2, organic light-emitting layer 3, electron transport layer 4, electron injection layer 5), and a second electrode 34 are formed by a known method, and an organic EL element layer 35 is formed.

[0093] <Sealing Film Formation Process>

[0094] First, on the surface of the substrate on which the organic EL element layer 35 is formed in the above organic EL element layer formation process, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by a plasma CVD method using a mask, and a first inorganic sealing film 36 is formed.

[0095] Next, an organic resin material such as an acrylic resin is formed on the surface of the substrate on which the first inorganic film 36 is formed by an inkjet method, and an organic sealing film 37 is formed.

[0096] Then, on the substrate on which the organic sealing film 37 is formed, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by a plasma CVD method using a mask, and a second inorganic sealing film 38 is formed, and thus a sealing film 40 is formed.

[0097] Finally, after a protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 40 is formed, the glass substrate is peeled from the lower surface of the resin substrate layer 10 by irradiating laser light from the glass substrate side of the resin substrate layer 10, and further, a protective sheet (not shown) is attached to the lower surface of the resin substrate layer 10 from which the glass substrate is peeled.

[0098] As described above, the organic EL display device 50a of the present embodiment can be manufactured.

[0099] As described above, according to the organic EL display device 50a of this embodiment, in the TFT layer 30a, a first electrode layer including the gate line 14d, a first interlayer insulating film 15, a second electrode layer including the upper wiring layer 16a, a second interlayer insulating film 17, a first wiring layer including the source line 21f, a first planarizing film 22a, a protective film 23a, a second wiring layer including the power line 27a, and a second planarizing film 28a are sequentially stacked. Here, in the frame region F surrounding the display region D, a first frame wiring 21h electrically connected to the power line 27a on the display region D side is provided as a first wiring layer, extending to the terminal portion T. Furthermore, in the frame region F, a second frame wiring 21i electrically connected to the second electrode 34 on the display region D side via the conductive layer 31b is provided as a first wiring layer, extending to the terminal portion T. Furthermore, a first slit Sa is provided in the shape of a frame, penetrating the first and second planarizing films 22a, 28a, between the display area D and the first barrier wall Wa, which overlaps the peripheral edge of the organic sealing film 37. Furthermore, a second barrier wall Wb is provided in the shape of a frame around the first barrier wall Wa. Furthermore, a second slit Sb is provided in the shape of a frame, penetrating the second planarizing film 28a, between the first barrier wall Wa and the second barrier wall Wb. Furthermore, in the first slit Sa and the second slit Sb, the edges of the first and second frame wirings 21h, 21i, which are opposed to each other, are covered by the protective film 23a. Thus, even if the first slit Sa and the second slit Sb are formed to form the first barrier wall Wa and the second barrier wall Wb, the first frame wiring 21h and the second frame wiring 21i are less likely to be damaged by side etching due to the developer used when forming the first planarizing film 22a and the second planarizing film 28a, the etching solution used when forming the first electrode 31a, and the developer used when forming the edge cover 32a. Therefore, it is possible to suppress damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process. Moreover, since damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process is suppressed, the sealing performance of the sealing film 40 formed on the first frame wiring 21h and the second frame wiring 21i can be ensured. Thus, it is possible to suppress the degradation of the organic EL layer 33, thereby improving the reliability of the organic EL display device 50a.

[0100] In addition, according to the organic EL display device 50a of this embodiment, since the first barrier wall Wa and the second barrier wall Wb have the first metal protrusion 27c and the second metal protrusion 27d, the first barrier wall Wa and the second barrier wall Wb are formed higher and can better block the ink that becomes the organic sealing film 37.

[0101] In addition, according to the organic EL display device 50a of this embodiment, a groove G that penetrates the first planarizing film 22a and the second planarizing film 28a is provided in a frame-shaped manner around the display area D, thereby suppressing the movement of moisture into the display area D within the resin layer such as the first planarizing film 22a and the second planarizing film 28a, and suppressing the degradation of the organic EL layer 33.

[0102] In addition, according to the organic EL display device 50a of this embodiment, since the first metal protrusion 27c and the second metal protrusion 27d are arranged in a manner electrically connected to the first frame wiring 21h or the second frame wiring 21i, the wiring resistance of the first frame wiring 21h and the second frame wiring 21i can be reduced.

[0103] Furthermore, according to the organic EL display device 50 a of the present embodiment, since the first metal layer 27 e is provided so as to be electrically connected to the second frame wiring 21 i , the wiring resistance of the second frame wiring 21 i can be reduced.

[0104] Furthermore, according to the organic EL display device 50 a of the present embodiment, since the terminal-side metal layer 27 f is provided so as to be electrically connected to the first frame wiring 21 h , the wiring resistance of the first frame wiring 21 h can be reduced.

[0105] In addition, according to the organic EL display device 50a of this embodiment, since the surface of the first planarization film 22a is covered by the protective film 23a, when the second wiring layer such as the power line 27a is patterned by dry etching, the etching of the surface layer of the first planarization film 22a can be suppressed, and the contamination in the chamber of the dry etching device can be suppressed.

[0106] Second Implementation Method

[0107] Figures 11 to 13 A second embodiment of the display device of the present invention is shown. Figure 11 This is a cross-sectional view of the display region D of the organic EL display device 50b of this embodiment, which is equivalent to Figure 4 In addition, Figure 12 and Figure 13 is a cross-sectional view of the frame region F of the organic EL display device 50b, which is equivalent to Figure 7 and Figure 8 In addition, in each of the following embodiments, Figures 1 to 10 The same parts are denoted by the same reference numerals, and detailed description thereof is omitted.

[0108] In the above-described first embodiment, the organic EL display device 50a provided with the second wiring layer composed of the three-layer metal laminate film is exemplified, but in the present embodiment, the organic EL display device 50b provided with the second wiring layer composed of the two-layer metal laminate film is exemplified.

[0109] The organic EL display device 50b, like the organic EL display device 50a of the above-described first embodiment, is provided with a display region D that performs image display and a frame region F that is provided around the display region D. Further, as shown in Figure 11 the organic EL display device 50b includes the resin substrate layer 10, the TFT layer 30b provided on the resin substrate layer 10, the organic EL element layer 35 provided on the TFT layer 30b, and the sealing film 40 provided so as to cover the organic EL element layer 35.

[0110] The TFT substrate 30b, like the TFT layer 30a of the above-described first embodiment, is provided with the undercoat film 11 provided on the resin substrate layer 10 and the plurality of first TFTs 9a, the plurality of second TFTs 9b, the plurality of third TFTs 9c, and the plurality of capacitors 9d provided on the undercoat film 11, as shown in Figure 11 Further, the TFT layer 30b, like the TFT layer 30a of the above-described first embodiment, is provided with the first planarization film 22a, the protection film 23a, and the second planarization film 28a provided in this order on each first TFT 9a, each second TFT 9b, each third TFT 9c, and each capacitor 9d, as shown in Figure 11

[0111] In the TFT layer 30b, as shown in Figure 11 the semiconductor layers 12a and 12b, the gate insulating film 13, the gates 14a and 14b, and the lower wiring layer 14c (first electrode layer) are laminated in this order on the undercoat film 11, the first interlayer insulating film 15, the upper wiring layer 16a (second electrode layer), the second interlayer insulating film 17, the sources 21a and 21c and the drains 21b and 21d (first wiring layer), the first planarization film 22a, the protection film 23a, the power supply line 27ab and the relay electrode 27bb (second wiring layer), and the second planarization film 28a.

[0112] ​In the TFT layer 30b, similarly to the TFT layer 30a of the first embodiment, a plurality of gate lines 14d are provided in the display region D so as to extend in parallel with each other. Furthermore, in the TFT layer 30b, similarly to the TFT layer 30a of the first embodiment, a plurality of light emitting control lines 14e are provided in the display region D so as to extend in parallel with each other. Furthermore, in the TFT layer 30b, similarly to the TFT layer 30a of the first embodiment, a plurality of source lines 21f are provided in the display region D so as to extend in parallel with each other. In the TFT layer 30b, in the display region D, the power supply lines 27ab are provided in a lattice shape as a second wiring layer. In addition, as Figure 11 As shown, the power line 27ab includes a lower metal film 24ab and an upper metal film 25ab sequentially stacked on the protective film 23a. In addition, in the TFT layer 30b, similar to the TFT layer 30a of the first embodiment described above, a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d are provided in each sub-pixel P. In addition, in the TFT layer 30b, the second TFT 9b is electrically connected to the corresponding first TFT 9a, the power line 27ab, and the third TFT 9c in each sub-pixel P. In addition, in the TFT layer 30b, the third TFT 9c is electrically connected to the corresponding second TFT 9b, the power line 27ab, and the light-emitting control line 14e in each sub-pixel P. In addition, in the TFT layer 30b, as shown in FIG. Figure 11 As shown, the drain electrode 21d of the third TFT 9c is electrically connected to the relay electrode 27bb via a contact hole formed in the first planarizing film 22a and the protective film 23a. In addition, the relay electrode 27bb is provided as a second wiring layer. Figure 11 2. In the TFT layer 30b, the capacitor 9d is electrically connected to the corresponding first TFT 9a and the power supply line 27ab in each sub-pixel P.

[0113] Furthermore, the organic EL display device 50 b includes a first frame wiring 21 h and a second frame wiring 21 i in the frame region F, similarly to the organic EL display device 50 a of the first embodiment.

[0114] Furthermore, the organic EL display device 50 b includes the first barrier wall Wa and the second barrier wall Wb in the frame region F, similarly to the organic EL display device 50 a according to the first embodiment.

[0115] like Figure 12As shown, the first barrier wall Wa includes: a first metal protrusion 27cb, which is provided as a second wiring layer; an inner lower resin layer 28c, which is provided as a first resin protrusion on the first metal protrusion 27cb and is formed of the same material and in the same layer as the second planarization film 28a; and an inner upper resin layer 32c, which is provided as a third resin protrusion on the inner lower resin layer 28c via a conductive layer 31b and is formed of the same material and in the same layer as the edge cover 32a. Here, the first metal protrusion 27cb is provided in a manner electrically connected to the first frame wiring 21h or the second frame wiring 21i. In addition, as shown in FIG. Figure 12 As shown, the first metal protrusion 27cb is composed of a lower metal film 24cb and an upper metal film 25cb. The lower metal film 24cb is composed of a titanium film or the like provided on the resin substrate layer 10 side, and the upper metal film 25cb is composed of an aluminum film or the like provided on the organic EL element layer 35 side. Figure 12 As shown, the end of the first metal protrusion 27cb is set in a right cone shape in such a way that the lower metal film 24cb protrudes more than the upper metal film 25cb. In addition, the first metal protrusion 27cb electrically connected to the first frame wiring 21h is set in a way along a part of one side of the display area D, which is a side of the display area D along the terminal portion T, in the same way as the first metal protrusion 27c of the first embodiment. In addition, the first metal protrusion 27cb electrically connected to the second frame wiring 21i is set in a way along the other part of one side of the display area D and three sides of the display area D, which is a side of the display area D along the terminal portion T, and the three sides of the display area D are three sides of the display area D that are not along the terminal portion T, in the same way as the first metal protrusion 27c of the first embodiment.

[0116] like Figure 12 As shown, the second barrier wall Wb includes: a second metal protrusion 27db, which is provided as a second wiring layer; an outer lower resin layer 28d, which is provided on the second metal protrusion 27db as a second resin protrusion and is formed of the same material and in the same layer as the second planarization film 28a; and an outer upper resin layer 32d, which is provided on the outer lower resin layer 28d as a fourth resin protrusion via the conductive layer 31b and is formed of the same material and in the same layer as the edge cover 32a. Here, the second metal protrusion 27db is provided in a manner electrically connected to the first frame wiring 21h or the second frame wiring 21i. In addition, as shown in FIG. Figure 12 As shown, the second metal protrusion 27db is composed of a lower metal film 24db and an upper metal film 25db. The lower metal film 24db is composed of a titanium film or the like provided on the resin substrate layer 10 side, and the upper metal film 25db is composed of an aluminum film or the like provided on the organic EL element layer 35 side. Figure 12As shown, the end of the second metal protrusion 27db is set in a right cone shape in a manner that protrudes more than the upper metal film 25db by the lower metal film 24db. In addition, the second metal protrusion 27db electrically connected to the first frame wiring 21h is set in a manner along a part of one side of the display area D, which is an edge of the display area D along the terminal portion T, in the same manner as the second metal protrusion 27d of the first embodiment. In addition, the second metal protrusion 27db electrically connected to the second frame wiring 21i is set in a manner along the other part of one side of the display area D and three sides of the display area D, which is an edge of the display area along the terminal portion T, and the three sides of the display area D are three sides of the display area D that are not along the terminal portion T, in the same manner as the second metal protrusion 27d of the first embodiment.

[0117] In addition, if Figure 12 As shown, the organic EL display device 50b includes a first metal layer 27eb in the frame region F. The first metal layer 27eb is provided as a second wiring layer in a substantially C-shaped manner between the groove G and the first slit Sa. Figure 12 As shown, the first metal layer 27eb includes a lower metal film 24eb and an upper metal film 25eb sequentially stacked on the protective film 23a, and the first metal layer 27eb is provided in a manner electrically connected to the second frame wiring 21i via contact holes formed in the first planarization film 22a and the protective film 23a. Figure 12 As shown, the end portion of the first metal layer 27eb is formed in a forward tapered shape so that the lower metal film 24eb protrudes beyond the upper metal film 25eb.

[0118] In addition, the organic EL display device 50b is similar to the organic EL display device 50a of the first embodiment, and includes a terminal side metal layer 27fb corresponding to the terminal side metal layer 27f of the organic EL display device 50a in the frame region F. Figure 13 As shown, the terminal side metal layer 27fb includes a lower metal film 24fb and an upper metal film 25fb sequentially stacked on the protective film 23a, and is provided in a manner electrically connected to the first frame wiring 21h via a contact hole formed in the protective film 23a inside the groove G. Figure 13 As shown, the end of the terminal-side metal layer 27fb is formed into a forward tapered shape so that the lower metal film 24fb protrudes beyond the upper metal film 25fb, and is covered by the second planarizing film 28a. This improves the adhesion between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby suppressing the intrusion of moisture and the like into the display area D via the interface between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby improving the reliability of the organic EL display device 50b.

[0119] In addition, if Figure 12 and Figure 13 As shown, the organic EL display device 50 b includes a plurality of peripheral photo spacers 32 b provided in the frame region F in an island shape so as to protrude upward at both edges of the groove G.

[0120] The organic EL display device 50b is flexible, similar to the organic EL display device 50a of the first embodiment. In each sub-pixel P, the light-emitting layer 3 of the organic EL layer 33 emits light appropriately via the first TFT 9a, the second TFT 9b, and the third TFT 9c, thereby displaying an image.

[0121] The organic EL display device 50b of this embodiment can be manufactured by changing the metal stack film when forming the second wiring layer from three layers (titanium film (upper) / aluminum film (middle) / titanium film (lower)) to two layers (aluminum film (upper) / titanium film (lower)) in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the first embodiment. Here, when the two-layer (aluminum film (upper) / titanium film (lower)) metal stack film is patterned, a resist pattern is formed on the metal stack film, and wet etching using the resist pattern is performed. At this time, due to the difference in etching rate, the line width of the aluminum film (upper) is smaller than the line width of the titanium film (lower), and the end of the second wiring layer including the terminal side metal layer 27fb is as shown in FIG. Figure 13 The shape shown is a positive cone.

[0122] As described above, according to the organic EL display device 50b of this embodiment, in the TFT layer 30b, a first electrode layer such as the gate line 14d, a first interlayer insulating film 15, a second electrode layer such as the upper wiring layer 16a, a second interlayer insulating film 17, a first wiring layer such as the source line 21f, a first planarizing film 22a, a protective film 23a, a second wiring layer such as the power line 27ab, and a second planarizing film 28a are sequentially stacked. Here, in the frame region F surrounding the display region D, a first frame wiring 21h electrically connected to the power line 27ab on the display region D side is provided as a first wiring layer, extending to the terminal portion T. Furthermore, in the frame region F, a second frame wiring 21i electrically connected to the second electrode 34 on the display region D side via the conductive layer 31b is provided as a first wiring layer, extending to the terminal portion T. Furthermore, a first slit Sa is provided in the first and second planarizing films 22a and 28a, extending through the first and second planarizing films 22a and 28a, between the display area D and the first barrier wall Wa, which overlaps the peripheral edge of the organic sealing film 37. Furthermore, a second barrier wall Wb is provided in the shape of a frame around the first barrier wall Wa. Furthermore, a second slit Sb is provided in the shape of a frame, extending through the second planarizing film 28a, between the first barrier wall Wa and the second barrier wall Wb. Furthermore, the edges of the first and second frame wirings 21h and 21i, which are opposed to each other, in the first and second slits Sa and Sb are covered by a protective film 23a. Thus, even if the first slit Sa and the second slit Sb are formed to form the first barrier wall Wa and the second barrier wall Wb, the first frame wiring 21h and the second frame wiring 21i are less likely to be damaged by side etching due to the developer used when forming the first planarizing film 22a and the second planarizing film 28a, the etching solution used when forming the first electrode 31a, and the developer used when forming the edge cover 32a. Therefore, damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process can be suppressed. Moreover, since damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process can be suppressed, the sealing performance of the sealing film 40 formed on the first frame wiring 21h and the second frame wiring 21i can be ensured. Thus, the degradation of the organic EL layer 33 can be suppressed, thereby improving the reliability of the organic EL display device 50b.

[0123] In addition, according to the organic EL display device 50b of this embodiment, since the first barrier wall Wa and the second barrier wall Wb have the first metal protrusion 27cb and the second metal protrusion 27db, the first barrier wall Wa and the second barrier wall Wb are formed higher and can better block the ink that becomes the organic sealing film 37.

[0124] Further, according to the organic EL display device 50b of this embodiment, the trench G that penetrates the first planarization film 22a and the second planarization film 28a is provided in a frame shape around the display region D, and thus movement of moisture into the display region D in the resin layer such as the first planarization film 22a and the second planarization film 28a can be suppressed, and deterioration of the organic EL layer 33 can be suppressed.

[0125] Further, according to the organic EL display device 50b of this embodiment, the first metal protrusion 27cb and the second metal protrusion 27db are provided in a manner to be electrically connected to the first frame wiring 21h or the second frame wiring 21i, and thus the wiring resistance of the first frame wiring 21h and the second frame wiring 21i can be reduced.

[0126] Further, according to the organic EL display device 50b of this embodiment, since the first metal layer 27eb is provided in a manner to be electrically connected to the second frame wiring 21i, the wiring resistance of the second frame wiring 21i can be reduced.

[0127] Further, according to the organic EL display device 50b of this embodiment, since the terminal-side metal layer 27fb is provided in a manner to be electrically connected to the first frame wiring 21h, the wiring resistance of the first frame wiring 21h can be reduced.

[0128] Further, according to the organic EL display device 50b of this embodiment, the surface of the first planarization film 22a is covered with the protective film 23a, and thus, for example, when the second wiring layer such as the power supply line 27ab is patterned by dry etching, etching of the surface layer of the first planarization film 22a can be suppressed, and contamination in the chamber of the dry etching device can be suppressed.

[0129] Third Embodiment

[0130] Figures 14 to 17 A third embodiment of the display device of the present application is shown. Here, Figure 14 is a cross-sectional view of a display region D of an organic EL display device 50c of this embodiment, and is a view corresponding to Figure 4 of FIG. 1. Further, Figure 15 , Figure 16 and Figure 17 are cross-sectional views of a frame region F of the organic EL display device 50c, and are views corresponding to Figure 7 , Figure 8 and Figure 9 of FIG. 1.

[0131] In the first embodiment, the organic EL display device 50a is illustrated in which the protective film 23a is provided between the first planarizing film 22a and the second wiring layer. However, in this embodiment, the organic EL display device 50c is illustrated in which the protective film 23b is provided between the first wiring layer and the first planarizing film 22a.

[0132] The organic EL display device 50c is similar to the organic EL display device 50a of the first embodiment, and includes: a display area D for displaying an image; and a frame area F provided around the display area D. Figure 14 As shown, the organic EL display device 50 c includes: a resin substrate layer 10 ; a TFT layer 30 c provided on the resin substrate layer 10 ; an organic EL element layer 35 provided on the TFT layer 30 c ; and a sealing film 40 provided to cover the organic EL element layer 35 .

[0133] The TFT substrate 30c is similar to the TFT layer 30a of the first embodiment. Figure 14 As shown, the substrate 10 includes a primer film 11 provided on the resin substrate layer 10 and a plurality of first TFTs 9a, a plurality of second TFTs 9b, a plurality of third TFTs 9c, and a plurality of capacitors 9d provided on the primer film 11. Figure 14 As shown, the TFT layer 30c includes a protective film 23b, a first planarizing film 22a, and a second planarizing film 28a, which are sequentially provided on each first TFT 9a, each second TFT 9b, each third TFT 9c, and each capacitor 9d.

[0134] In the TFT layer 30c, as Figure 14 As shown, semiconductor layers 12a and 12b, a gate insulating film 13, gates 14a and 14b and a lower wiring layer 14c (first electrode layer), a first interlayer insulating film 15, an upper wiring layer 16a (second electrode layer), a second interlayer insulating film 17, source electrodes 21a and 21c and drain electrodes 21b and 21d (first wiring layer), a protective film 23b composed of an inorganic insulating film, a first planarizing film 22a, a power supply line 27a and a relay electrode 27b (second wiring layer), and a second planarizing film 28a are sequentially stacked on the base coat film 11.

[0135] In the TFT layer 30c, as with the TFT layer 30a of the first embodiment described above, a plurality of gate lines 14d are provided in the display region D so as to extend in parallel with one another. Further, in the TFT layer 30c, as with the TFT layer 30a of the first embodiment described above, a plurality of light emission control lines 14e are provided in the display region D so as to extend in parallel with one another. Further, in the TFT layer 30c, as with the TFT layer 30a of the first embodiment described above, a plurality of source lines 21f are provided in the display region D so as to extend in parallel with one another. Further, in the TFT layer 30c, in the display region D, a power supply line 27a is provided as a second wiring layer in a lattice shape. Further, in the TFT layer 30c, as with the TFT layer 30a of the first embodiment described above, in each sub-pixel P, a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d are respectively provided. Further, in the TFT layer 30c, as shown in FIG. 19, the drain 21d of the third TFT 9c is electrically connected to the relay electrode 27b via a contact hole formed in the protective film 23b and the first planarization film 22a. Further, in the TFT layer 30c, the upper wiring layer 16a of the capacitor 9d is electrically connected to the power supply line 27a via a contact hole (not shown) formed in the second interlayer insulating film 17, the protective film 23b, and the first planarization film 22a. Figure 14

[0136] Further, the organic EL display device 50c, as with the organic EL display device 50a of the first embodiment described above, has a first frame wiring 21h and a second frame wiring 21i in the frame region F.

[0137] Further, the organic EL display device 50c, as with the organic EL display device 50a of the first embodiment described above, has a first barrier wall Wa and a second barrier wall Wb in the frame region F, as shown in FIG. 18 and FIG. 19. Figure 15 Figure 16 Further, in the first slit Sa provided between the display region D and the first barrier wall Wa and the second slit Sb provided between the first barrier wall Wa and the second barrier wall Wb, the edge portion of the first frame wiring 21h and the edge portion of the second frame wiring 21i are covered by the protective film 23b, as shown in FIG. 18 and FIG. 19. Figure 17

[0138] Further, the organic EL display device 50c, as with the organic EL display device 50a of the first embodiment described above, has a first metal layer 27e provided as a second wiring layer in a substantially C shape between the trench G and the first slit Sa in the frame region F, as shown in FIG. 18. Figure 15

[0139] ​​​​Further, the organic EL display device 50c, like the organic EL display device 50a of the above-described first embodiment, has, in the frame region F, the terminal-side metal layer 27f provided in a substantially T shape as a second wiring layer. Here, as shown in FIG. 7, the terminal-side metal layer 27f has the lower metal film 24f, the middle metal film 25f, and the upper metal film 26f stacked in this order on the first planarization film 22a, and is provided in a manner to be electrically connected to the first frame wiring 21h via the contact hole formed in the protective film 23b inside the trench G. Figure 16

[0140] Further, the organic EL display device 50c, like the organic EL display device 50a of the above-described first embodiment, has, in the frame region F, the terminal-side metal layer 27f provided in a substantially T shape as a second wiring layer. Here, as shown in FIG. 7, the terminal-side metal layer 27f has the lower metal film 24f, the middle metal film 25f, and the upper metal film 26f stacked in this order on the first planarization film 22a, and is provided in a manner to be electrically connected to the first frame wiring 21h via the contact hole formed in the protective film 23b inside the trench G. Figure 15 Figure 16 Further, the organic EL display device 50c, like the organic EL display device 50a of the above-described first embodiment, has, in the frame region F, the terminal-side metal layer 27f provided in a substantially T shape as a second wiring layer. Here, as shown in FIG. 7, the terminal-side metal layer 27f has the lower metal film 24f, the middle metal film 25f, and the upper metal film 26f stacked in this order on the first planarization film 22a, and is provided in a manner to be electrically connected to the first frame wiring 21h via the contact hole formed in the protective film 23b inside the trench G.

[0141] The organic EL display device 50c of the above-described first embodiment, like the organic EL display device 50a of the above-described first embodiment, is flexible, and in each sub-pixel P, image display is performed by causing the light-emitting layer 3 of the organic EL layer 33 to emit light appropriately via the first TFT 9a, the second TFT 9b, and the third TFT 9c.

[0142] The organic EL display device 50c of the present embodiment can be manufactured by performing the process of forming the protective film 23b between the process of forming the first wiring layer and the process of forming the first planarization film 22a in the TFT layer formation process of the manufacturing method of the organic EL display device 50a of the above-described first embodiment.

[0143] ​​As described above, according to the organic EL display device 50c of this embodiment, in the TFT layer 30c, a first electrode layer such as the gate line 14d, a first interlayer insulating film 15, a second electrode layer such as the upper wiring layer 16a, a second interlayer insulating film 17, a first wiring layer such as the source line 21f, a protective film 23b, a first planarizing film 22a, a second wiring layer such as the power line 27a, and a second planarizing film 28a are stacked in this order. Here, in the frame region F surrounding the display region D, a first frame wiring 21h electrically connected to the power line 27a on the display region D side is provided as a first wiring layer, extending to the terminal portion T. Furthermore, in the frame region F, a second frame wiring 21i electrically connected to the second electrode 34 on the display region D side via the conductive layer 31b is provided as a first wiring layer, extending to the terminal portion T. Furthermore, a first slit Sa is provided in the first planarizing film 22a and the second planarizing film 28a between the display area D and the first barrier wall Wa that overlaps the peripheral edge of the organic sealing film 37, extending through the first and second planarizing films 22a and 28a. Furthermore, a second barrier wall Wb is provided in the form of a frame around the first barrier wall Wa. Furthermore, a second slit Sb is provided in the second planarizing film 28a between the first and second barrier walls Wa and Wb, extending through the second planarizing film 28a. Furthermore, the edges of the first and second frame wirings 21h and 21i, which are opposed to each other, are covered by a protective film 23b in the first and second slits Sa and Sb. Thus, even if the first slit Sa and the second slit Sb are formed to form the first barrier wall Wa and the second barrier wall Wb, the first frame wiring 21h and the second frame wiring 21i are less likely to be damaged by side etching due to the developer used when forming the first planarizing film 22a and the second planarizing film 28a, the etching solution used when forming the first electrode 31a, and the developer used when forming the edge cover 32a. Therefore, it is possible to suppress damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process. Moreover, since damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process is suppressed, the sealing performance of the sealing film 40 formed on the first frame wiring 21h and the second frame wiring 21i can be ensured. Thus, it is possible to suppress the degradation of the organic EL layer 33, thereby improving the reliability of the organic EL display device 50c.

[0144] In addition, according to the organic EL display device 50c of this embodiment, since the first barrier wall Wa and the second barrier wall Wb have the first metal protrusion 27c and the second metal protrusion 27d, the first barrier wall Wa and the second barrier wall Wb are formed higher and can better block the ink that becomes the organic sealing film 37.

[0145] Further, according to the organic EL display device 50c of the present embodiment, the trench G that penetrates the first planarization film 22a and the second planarization film 28a is provided in a frame shape around the display region D, and thus movement of moisture into the display region D in the resin layer such as the first planarization film 22a and the second planarization film 28a can be suppressed, and deterioration of the organic EL layer 33 can be suppressed.

[0146] Further, according to the organic EL display device 50c of the present embodiment, the first metal protrusion 27c and the second metal protrusion 27d are provided in a manner to be electrically connected to the first frame wiring 21h or the second frame wiring 21i, and thus the wiring resistance of the first frame wiring 21h and the second frame wiring 21i can be reduced.

[0147] Further, according to the organic EL display device 50c of the present embodiment, since the first metal layer 27e is provided in a manner to be electrically connected to the second frame wiring 21i, the wiring resistance of the second frame wiring 21i can be reduced.

[0148] Further, according to the organic EL display device 50c of the present embodiment, since the terminal-side metal layer 27f is provided in a manner to be electrically connected to the first frame wiring 21h, the wiring resistance of the first frame wiring 21h can be reduced.

[0149] <Fourth Embodiment>

[0150] Figures 18 to 20 A fourth embodiment of a display device of the present application is described. Here, Figure 18 is a cross-sectional view of a display region D of an organic EL display device 50d of the present embodiment, and is a view corresponding to Figure 4 of the first embodiment. Further, Figure 19 and Figure 20 are cross-sectional views of a frame region F of the organic EL display device 50d, and are views corresponding to Figure 7 and Figure 8 of the first embodiment.

[0151] In the first embodiment described above, the organic EL display device 50a in which the protective film 23a is provided between the first planarization film 22a and the second wiring layer, and the second wiring layer is composed of a three-layer metal laminate film was exemplified, but in the present embodiment, the organic EL display device 50d in which the protective film 23b is provided between the first wiring layer and the first planarization film 22a, and the second wiring layer is composed of a two-layer metal laminate film is exemplified.

[0152] The organic EL display device 50d has a display region D that performs image display, and a frame region F provided around the display region D, like the organic EL display device 50a of the first embodiment described above. Further, as Figure 18As shown, the organic EL display device 50 d includes: a resin substrate layer 10 ; a TFT layer 30 d provided on the resin substrate layer 10 ; an organic EL element layer 35 provided on the TFT layer 30 d ; and a sealing film 40 provided to cover the organic EL element layer 35 .

[0153] The TFT substrate 30d is similar to the TFT layer 30a of the first embodiment. Figure 18 As shown, the substrate 10 includes a primer film 11 provided on the resin substrate layer 10 and a plurality of first TFTs 9a, a plurality of second TFTs 9b, a plurality of third TFTs 9c, and a plurality of capacitors 9d provided on the primer film 11. Figure 18 As shown, the TFT layer 30d includes a protective film 23b, a first planarizing film 22a, and a second planarizing film 28a sequentially provided on each first TFT 9a, each second TFT 9b, each third TFT 9c, and each capacitor 9d.

[0154] In the TFT layer 30d, as Figure 18 As shown, semiconductor layers 12a and 12b, a gate insulating film 13, gates 14a and 14b, a lower wiring layer 14c (first electrode layer), a first interlayer insulating film 15, an upper wiring layer 16a (second electrode layer), a second interlayer insulating film 17, source electrodes 21a and 21c, drain electrodes 21b and 21d (first wiring layer), a protective film 23b, a first planarizing film 22a, a power supply line 27ab and a relay electrode 27bb (second wiring layer), and a second planarizing film 28a are sequentially stacked on the base coat film 11.

[0155] Similar to the TFT layer 30a in the first embodiment, the TFT layer 30d includes multiple gate lines 14d extending parallel to one another in the display region D. Similar to the TFT layer 30a in the first embodiment, the TFT layer 30d includes multiple light emission control lines 14e extending parallel to one another in the display region D. Similar to the TFT layer 30a in the first embodiment, the TFT layer 30d includes multiple source lines 21f extending parallel to one another in the display region D. Furthermore, in the TFT layer 30d, power supply lines 27ab are arranged in a grid pattern as a second wiring layer in the display region D. Similar to the TFT layer 30a in the first embodiment, the TFT layer 30d includes a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d in each subpixel P. Furthermore, in the TFT layer 30d, the second TFT 9b is electrically connected to the corresponding first TFT 9a, the power supply line 27ab, and the third TFT 9c in each sub-pixel P. Furthermore, in the TFT layer 30d, the third TFT 9c is electrically connected to the corresponding second TFT 9b, the power supply line 27ab, and the light emission control line 14e in each sub-pixel P. Furthermore, in the TFT layer 30d, as shown in FIG. Figure 18 As shown, the drain electrode 21d of the third TFT 9c is electrically connected to the relay electrode 27bb via contact holes formed in the protective film 23b and the first planarizing film 22a. In addition, in the TFT layer 30d, the capacitor 9d is electrically connected to the corresponding first TFT 9a and the power supply line 27ab in each sub-pixel P.

[0156] Furthermore, the organic EL display device 50 d includes a first frame wiring 21 h and a second frame wiring 21 i in the frame region F, similarly to the organic EL display device 50 a according to the first embodiment.

[0157] In addition, the organic EL display device 50d is similar to the organic EL display device 50b of the second embodiment. Figure 19 as well as Figure 20 As shown, a first barrier wall Wa and a second barrier wall Wb are provided in the frame region F. Here, in the first slit Sa provided between the display region D and the first barrier wall Wa, and in the second slit Sb provided between the first barrier wall Wa and the second barrier wall Wb, the edges of the first frame wiring 21h and the edges of the second frame wiring 21i facing each other are covered by the protective film 23b.

[0158] In addition, the organic EL display device 50d is similar to the organic EL display device 50b of the second embodiment. Figure 19As shown, in the frame region F, a first metal layer 27eb provided in a substantially C-shape as a second wiring layer is provided between the groove G and the first slit Sa.

[0159] In addition, the organic EL display device 50d is similar to the organic EL display device 50b of the second embodiment described above, and includes a terminal side metal layer 27fb provided as a second wiring layer in the frame region F. Figure 20 As shown, the terminal side metal layer 27fb includes a lower metal film 24fb and an upper metal film 25fb sequentially stacked on the first planarization film 22a, and is provided in a manner electrically connected to the first frame wiring 21h via a contact hole formed in the protection film 23b inside the groove G. Figure 20 As shown, the end of the terminal-side metal layer 27fb is formed into a forward tapered shape so that the lower metal film 24fb protrudes beyond the upper metal film 25fb, and is covered by the second planarizing film 28a. This improves the adhesion between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby suppressing the intrusion of moisture and the like into the display area D via the interface between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby improving the reliability of the organic EL display device 50d.

[0160] The organic EL display device 50d is similar to the organic EL display device 50a of the first embodiment. Figure 19 as well as Figure 20 As shown, in the frame region F, there are a plurality of peripheral photo spacers 32 b provided in an island shape so as to protrude upward at both edges of the groove G.

[0161] The organic EL display device 50d is flexible, similar to the organic EL display device 50a of the first embodiment, and is configured to display images by appropriately emitting light from the light-emitting layer 3 of the organic EL layer 33 via the first TFT 9a, the second TFT 9b, and the third TFT 9c in each sub-pixel P.

[0162] The organic EL display device 50d of this embodiment can be manufactured by changing the metal stacked film when forming the first wiring layer from three layers (titanium film (upper) / aluminum film (middle) / titanium film (lower)) to two layers (aluminum film (upper) / titanium film (lower)) in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the above-mentioned first embodiment, as in the above-mentioned second embodiment, and performing the process of forming the protective film 23b between the process of forming the first wiring layer and the process of forming the first planarizing film 22a, as in the above-mentioned third embodiment.

[0163] As described above, according to the organic EL display device 50d of this embodiment, a first electrode layer such as the gate line 14d, a first interlayer insulating film 15, a second electrode layer such as the upper wiring layer 16a, a second interlayer insulating film 17, a first wiring layer such as the source line 21f, a protective film 23b, a first planarizing film 22a, a second wiring layer such as the power line 27ab, and a second planarizing film 28a are sequentially stacked in the TFT layer 30d. Here, in the frame region F surrounding the display region D, a first frame wiring 21h electrically connected to the power line 27ab on the display region D side is provided as a first wiring layer, extending to the terminal portion T. Furthermore, in the frame region F, a second frame wiring 21i electrically connected to the second electrode 34 on the display region D side via the conductive layer 31b is provided as a first wiring layer, extending to the terminal portion T. Furthermore, a first slit Sa is provided in a frame-like manner in the first and second planarizing films 22a and 28a, extending through the first and second planarizing films 22a and 28a, between the display area D and the first barrier wall Wa, which overlaps the peripheral edge of the organic sealing film 37. Furthermore, a second barrier wall Wb is provided in a frame-like manner around the first barrier wall Wa. Furthermore, a second slit Sb is provided in a frame-like manner in the second planarizing film 28a, extending through the first and second barrier walls Wa and Wb. Furthermore, the edges of the first and second frame wirings 21h and 21i, which face each other, are covered by a protective film 23b in the first and second slits Sa and Sb. Thus, even if the first slit Sa and the second slit Sb are formed to form the first barrier wall Wa and the second barrier wall Wb, the first frame wiring 21h and the second frame wiring 21i are less likely to be damaged by side etching due to the developer used when forming the first planarizing film 22a and the second planarizing film 28a, the etching solution used when forming the first electrode 31a, and the developer used when forming the edge cover 32a. Therefore, it is possible to suppress damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process. Moreover, since damage to the first frame wiring 21h and the second frame wiring 21i during the manufacturing process is suppressed, the sealing performance of the sealing film 40 formed on the first frame wiring 21h and the second frame wiring 21i can be ensured. Therefore, it is possible to suppress the degradation of the organic EL layer 33, thereby improving the reliability of the organic EL display device 50d.

[0164] In addition, according to the organic EL display device 50d of this embodiment, since the first barrier wall Wa and the second barrier wall Wb have the first metal protrusion 27cb and the second metal protrusion 27db, the first barrier wall Wa and the second barrier wall Wb are formed higher and can better block the ink that becomes the organic sealing film 37.

[0165] In addition, according to the organic EL display device 50d of this embodiment, a groove G that penetrates the first planarizing film 22a and the second planarizing film 28a is provided in a frame-shaped manner around the display area D, thereby suppressing the movement of moisture into the display area D within the resin layer such as the first planarizing film 22a and the second planarizing film 28a, and suppressing the degradation of the organic EL layer 33.

[0166] In addition, according to the organic EL display device 50d of this embodiment, the first metal protrusion 27cb and the second metal protrusion 27db are provided in a manner electrically connected to the first frame wiring 21h or the second frame wiring 21i, thereby reducing the wiring resistance of the first frame wiring 21h and the second frame wiring 21i.

[0167] Furthermore, according to the organic EL display device 50d of the present embodiment, since the first metal layer 27eb is provided so as to be electrically connected to the second frame wiring 21i, the wiring resistance of the second frame wiring 21i can be reduced.

[0168] Furthermore, according to the organic EL display device 50d of the present embodiment, since the terminal-side metal layer 27fb is provided so as to be electrically connected to the first frame wiring 21h, the wiring resistance of the first frame wiring 21h can be reduced.

[0169] Furthermore, in the organic EL display device 50d of this embodiment, the terminal-side metal layer 27fb is composed of a lower metal film 24fb formed of a titanium film disposed on the resin substrate layer 10 side, and an upper metal film 25fb formed of an aluminum film disposed on the organic EL element layer 35 side. The end of the terminal-side metal layer 27fb is formed into a forward tapered shape, with the lower metal film 24fb protruding beyond the upper metal film 25fb, and is covered by the second planarizing film 28a. This improves the adhesion between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby suppressing the intrusion of moisture, etc., into the display area D via the interface between the end of the terminal-side metal layer 27fb and the second planarizing film 28a, thereby improving the reliability of the organic EL display device 50d.

[0170] Fifth Implementation Method

[0171] Figure 21 and Figure 22 A fifth embodiment of the display device of the present invention is shown. Figure 21 This is a plan view schematically showing the arrangement of the first frame wiring 21h, the second frame wiring 21i, the groove G, the first barrier wall Wa, the second barrier wall Wb, etc. in the organic EL display device 50f of this embodiment, which is equivalent to Figure 2 In addition, Figure 22 It is along Figure 21 A cross-sectional view of the frame region F of the organic EL display device 50f taken along line XXII-XXII in FIG.

[0172] In the above-mentioned first embodiment, an organic EL display device 50a is illustrated in which the relatively narrow first metal protrusion 27c, the second metal protrusion 27d and the terminal side metal layer 27f are electrically connected to the first border wiring 21h, and the relatively narrow first metal protrusion 27c, the second metal protrusion 27d and the first metal layer 27e are electrically connected to the second border wiring 21i. However, in this embodiment, an organic EL display device 50f is illustrated in which the relatively wide second metal layer 27h is electrically connected to the first border wiring 21h, and the relatively wide third metal layer 27i is electrically connected to the second border wiring 21i.

[0173] The organic EL display device 50f, similar to the organic EL display device 50a of the first embodiment, includes a display area D for displaying images and a frame area F provided around the display area D. Furthermore, similar to the organic EL display device 50b of the second embodiment, the organic EL display device 50f includes a resin substrate layer 10; a TFT layer 30b provided on the resin substrate layer 10; an organic EL element layer 35 provided on the TFT layer 30b; and a sealing film 40 provided to cover the organic EL element layer 35.

[0174] The organic EL display device 50f is similar to the organic EL display device 50a of the first embodiment, and includes a first frame wiring 21h and a second frame wiring 21i in the frame region F. In the organic EL display device 50f, as shown in FIG. Figure 21 As shown in FIG, a second metal layer 27h and a third metal layer 27i are provided to cover the first frame wiring 21h and the second frame wiring 21i, respectively. Figure 22 As shown, a protective film 23a having contact holes is provided between the second metal layer 27h and the third metal layer 27i and the first frame wiring 21h and the second frame wiring 21i. Thus, the second metal layer 27h and the first frame wiring 21h are electrically connected to each other, and the third metal layer 27i and the second frame wiring 21i are electrically connected to each other. In addition, in this embodiment, the configuration in which the protective film 23a is provided between the second metal layer 27h and the third metal layer 27i and the first frame wiring 21h and the second frame wiring 21i is illustrated, but the protective film 23a may also be omitted. In addition, as Figure 22 As shown, the second metal layer 27h is composed of a lower metal film 24h and an upper metal film 25h. The lower metal film 24h is composed of a titanium film or the like provided on the resin substrate layer 10 side, and the upper metal film 25h is composed of an aluminum film or the like provided on the organic EL element layer 35 side. Figure 22As shown in FIG. 1 , the end portion of the second metal layer 27h is formed into a forward tapered shape so that the lower metal film 24h protrudes more than the upper metal film 25h. Figure 22 As shown, the third metal layer 27i is composed of a lower metal film 24i and an upper metal film 25i. The lower metal film 24i is composed of a titanium film or the like provided on the resin substrate layer 10 side, and the upper metal film 25i is composed of an aluminum film or the like provided on the organic EL element layer 35 side. Figure 22 As shown, the end portion of the third metal layer 27i is formed in a forward tapered shape so that the lower metal film 24i protrudes beyond the upper metal film 25i.

[0175] Furthermore, the organic EL display device 50 f includes the first barrier wall Wa and the second barrier wall Wb in the frame region F, similarly to the organic EL display device 50 a according to the first embodiment.

[0176] Furthermore, similar to the organic EL display device 50a of the first embodiment, the organic EL display device 50f includes a plurality of peripheral photo spacers 32b provided in an island shape in the frame region F so as to protrude upward from both edges of the groove G.

[0177] The organic EL display device 50f is flexible like the organic EL display device 50a of the first embodiment. In each sub-pixel P, the light-emitting layer 3 of the organic EL layer 33 emits light appropriately via the first TFT 9a, the second TFT 9b, and the third TFT 9c, thereby displaying an image.

[0178] The organic EL display device 50f of this embodiment can be manufactured by changing the metal stack film when forming the second wiring layer from three layers (titanium film (upper) / aluminum film (middle) / titanium film (lower)) to two layers (aluminum film (upper) / titanium film (lower)) in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the above-mentioned first embodiment, and changing its pattern shape.

[0179] As described above, according to the organic EL display device 50f of the present embodiment, in the TFT layer 30b, the first electrode layer of the gate line 14d and the like, the first interlayer insulating film 15, the second electrode layer of the upper wiring layer 16a and the like, the second interlayer insulating film 17, the first wiring layer of the source line 21f and the like, the first planarization film 22a, the protective film 23a, the second wiring layer of the power supply line 27ab and the like, and the second planarization film 28a are sequentially stacked. Here, in the frame region F around the display region D, the first frame wiring 21h electrically connected to the power supply line 27ab on the display region D side is provided as the first wiring layer in a manner so as to extend to the terminal portion T. Further, in the frame region F, the second frame wiring 21i electrically connected to the second electrode 34 on the display region D side via the conductive layer 31b is provided as the first wiring layer in a manner so as to extend to the terminal portion T. Also, in the first planarization film 22a and the second planarization film 28a, between the display region D and the first barrier wall Wa overlapping with the peripheral end portion of the organic sealing film 37, the first slit Sa penetrating the first planarization film 22a and the second planarization film 28a is provided in a frame shape. Further, the second barrier wall Wb is provided in a frame shape around the first barrier wall Wa. Also, in the second planarization film 28a, between the first barrier wall Wa and the second barrier wall Wb, the second slit Sb penetrating the second planarization film 28a is provided in a frame shape. Also, in the first slit Sa and the second slit Sb, the edge portions of the first frame wiring 21h and the second frame wiring 21i facing each other are covered with the protective film 23a. Thus, even if the first slit Sa and the second slit Sb are formed in order to form the first barrier wall Wa and the second barrier wall Wb, the first frame wiring 21h and the second frame wiring 21i are less likely to be damaged by side etching caused by a developing solution used when forming the first planarization film 22a and the second planarization film 28a, an etching solution used when forming the first electrode 31a, and a developing solution used when forming the edge cover 32a. Therefore, damage received in the manufacturing process of the first frame wiring 21h and the second frame wiring 21i can be suppressed. Also, since the second metal layer 27h and the third metal layer 27i are formed by the lower metal films 24h and 24i composed of a titanium film and the like provided on the resin substrate layer 10 side, and the upper metal films 25h and 25i composed of an aluminum film and the like provided on the organic EL element layer 35 side, the end portions of the second metal layer 27h and the third metal layer 27i protrude from the lower metal films more than the upper metal films in a manner so as to be formed in a positive taper shape by a developing solution used when forming the second planarization film 28a, an etching solution used when forming the first electrode 31a, and a developing solution used when forming the edge cover 32a. Therefore, the sealing performance of the sealing film 40 formed on the second metal layer 27h and the third metal layer 27i can be ensured. Thus, deterioration of the organic EL layer 33 can be suppressed, and therefore the reliability of the organic EL display device 50f can be improved.

[0180] In addition, according to the organic EL display device 50f of this embodiment, a groove G that penetrates the first planarizing film 22a and the second planarizing film 28a is provided in a frame-shaped manner around the display area D, thereby suppressing the movement of moisture into the display area D within the resin layer such as the first planarizing film 22a and the second planarizing film 28a, and suppressing the degradation of the organic EL layer 33.

[0181] In addition, according to the organic EL display device 50f of this embodiment, since the wider third metal layer 27h and the fourth metal layer 27i are arranged in a manner electrically connected to the first frame wiring 21h and the second frame wiring 21i, the wiring resistance of the first frame wiring 21h and the second frame wiring 21i can be further reduced.

[0182] In addition, according to the organic EL display device 50f of this embodiment, since the surface of the first planarization film 22a is covered by the protective film 23a, when the second wiring layer of the power line 27ab, etc. is patterned by dry etching, the etching of the surface layer of the first planarization film 22a can be suppressed, and the contamination in the chamber of the dry etching device can be suppressed.

[0183] Other Implementation Methods

[0184] In the above embodiments, an organic EL layer having a five-layer stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is exemplified. However, the organic EL layer may also have a three-layer stacked structure of, for example, a hole injection layer serving as a hole transport layer, a light-emitting layer, and an electron transport layer serving as an electron injection layer.

[0185] In addition, in the above-mentioned embodiments, an organic EL display device in which the first electrode serves as an anode and the second electrode serves as a cathode is exemplified, but the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed, the first electrode serves as a cathode, and the second electrode serves as an anode.

[0186] Furthermore, in the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode is used as a drain electrode is exemplified. However, the present invention is also applicable to an organic EL display device in which the electrode of the TFT connected to the first electrode is used as a source electrode.

[0187] Furthermore, in the above embodiments, an organic EL display device is used as an example for the display device. However, the present invention can also be applied to a display device having multiple light-emitting elements driven by current. For example, it can be applied to a display device having a light-emitting element that uses a quantum dot-containing layer, namely a QLED (Quantum-dot light emitting diode).

[0188] Industrial Application Possibilities

[0189] As described above, the present invention is useful for a flexible display device.

[0190] Description of Reference Numerals

[0191] D: Display area

[0192] F: Border area

[0193] G: Groove

[0194] P: Sub-pixel

[0195] Sa: First slit

[0196] Sb: Second slit

[0197] T: Terminal

[0198] Wa: First weir wall

[0199] Wb: Second weir wall

[0200] 10: Resin substrate layer (base substrate)

[0201] 21a, 21c: Source (first wiring layer)

[0202] 21b, 21d: Drain (first wiring layer)

[0203] 21f: Source line (first wiring layer)

[0204] 21h: First border wiring (first wiring layer)

[0205] 21i: Second border wiring (first wiring layer)

[0206] 22a: First planarization film

[0207] 23a, 23b: Protective film

[0208] 24cb, 24db, 24h, 24i, 24fb: lower metal film

[0209] 25cb, 25db, 25h, 25i, 25fb: upper metal film

[0210] 27a: Power supply line (second wiring layer)

[0211] 27c, 27cb: First metal protrusion (second wiring layer)

[0212] 27d, 27db: Second metal protrusion (second wiring layer)

[0213] 27e, 27eb: First metal layer (second wiring layer)

[0214] 27f, 27fb: terminal side metal layer (second wiring layer)

[0215] 27h: second metal layer (second wiring layer)

[0216] 27i: third metal layer (second wiring layer)

[0217] 28a: second planarization film

[0218] 28c: inner lower resin layer (first resin protrusion)

[0219] 28d: outer lower resin layer (second resin protrusion)

[0220] 30a, 30b, 30c, 30d: TFT layer (thin film transistor layer)

[0221] 31a: first electrode

[0222] 31b: conductive layer

[0223] 32a: edge cover

[0224] 32c: inner upper resin layer (third resin protrusion)

[0225] 32d: outer upper resin layer (fourth resin protrusion)

[0226] 33: light emitting layer (organic EL layer, organic electroluminescent layer)

[0227] 34: second electrode

[0228] 35: organic EL element layer (light emitting element layer)

[0229] 36: first inorganic sealing film

[0230] 37: organic sealing film

[0231] 38: second inorganic sealing film

[0232] 40: sealing film

[0233] 50a, 50b, 50c, 50d, 50f: organic EL display device

Claims

1. A display device, characterized in that: It has: base substrate; a thin film transistor layer provided on the base substrate, wherein a first wiring layer, a first planarization film, a second wiring layer, and a second planarization film are sequentially stacked; a light-emitting element layer, which is provided on the thin film transistor layer, corresponds to a plurality of sub-pixels constituting the display area, and is sequentially stacked with a plurality of first electrodes, a common edge cover, a plurality of light-emitting layers, and a common second electrode; a sealing film provided so as to cover the light-emitting element layer and comprising a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film stacked in this order; a first barrier wall in a frame region surrounding the display region, the first barrier wall surrounding the display region and being provided in a frame shape so as to overlap with a peripheral end portion of the organic sealing film; a power supply line, which is provided in the display area as the second wiring layer; a first frame wiring, which is provided in the frame region as the first wiring layer so as to extend along a terminal portion at an end of the frame region and is electrically connected to the power line; as well as a second frame wiring, which is provided in the frame region as the first wiring layer so as to extend to the terminal portion and is electrically connected to the second electrode via a conductive layer formed of the same material and on the same layer as the first electrodes; In the first planarizing film and the second planarizing film, a first slit penetrating the first planarizing film and the second planarizing film is provided in a frame shape between the display area and the first barrier wall. In the first slit, edges of the first frame wiring and the second frame wiring facing each other are covered with a protective film made of an inorganic insulating film constituting the thin film transistor layer.

2. The display device according to claim 1, wherein The protection film is provided between the first planarization film and the second wiring layer.

3. The display device according to claim 1, wherein The protection film is provided between the first wiring layer and the first planarization film.

4. The display device according to claim 1, wherein The first barrier wall comprises: a first metal protrusion serving as the second wiring layer and provided in a manner electrically connected to the first frame wiring or the second frame wiring; and The first resin protrusion is provided on the first metal protrusion and is formed of the same material and in the same layer as the second planarizing film.

5. The display device according to claim 4, wherein: The end portion of the first metal protrusion is formed in a forward tapered shape in which a portion on the base substrate side protrudes further than a portion on the light emitting element layer side.

6. The display device according to claim 5, wherein: The first metal protrusion is composed of a lower metal film and an upper metal film, The lower metal film is composed of a titanium film provided on the base substrate side. The upper metal film is composed of an aluminum film provided on the light emitting element layer side.

7. The display device according to claim 4, wherein: The display area is set to a rectangular shape, The first metal protrusion electrically connected to the first frame wiring is provided along a portion of one side of the display region, wherein the one side of the display region is a side of the display region along the terminal portion.

8. The display device according to claim 7, wherein: The first metal protrusion electrically connected to the second frame wiring is provided along the other portion of one side of the display area and along three sides of the display area. The one side of the display area is a side of the display area along the terminal portion, and the three sides of the display area are three sides of the display area not along the terminal portion.

9. The display device according to claim 4, wherein: The first barrier wall includes a third resin protrusion provided on the first resin protrusion and formed of the same material and layer as the edge cover.

10. The display device according to claim 1, wherein A second barrier wall is provided around the first barrier wall in a frame shape. On the second planarizing film, a second slit penetrating the second planarizing film is provided in a frame shape between the first barrier wall and the second barrier wall. In the second slit, the edge portion of the first frame wiring and the edge portion of the second frame wiring facing each other are covered by the protective film.

11. The display device according to claim 10, wherein: The second barrier wall comprises: a second metal protrusion, which is provided as the second wiring layer in a manner electrically connected to the first frame wiring or the second frame wiring; and The second resin protrusion is provided on the second metal protrusion and is formed of the same material and in the same layer as the second planarizing film.

12. The display device according to claim 11, wherein The end portion of the second metal protrusion is formed in a forward tapered shape in which a portion on the base substrate side protrudes further than a portion on the light emitting element layer side.

13. The display device according to claim 12, wherein: The second metal protrusion is composed of a lower metal film and an upper metal film, and the lower metal film is composed of a titanium film provided on the base substrate side. The upper metal film is composed of an aluminum film provided on the light emitting element layer side.

14. The display device according to claim 11, wherein The display area is set to a rectangular shape, The second metal protrusion electrically connected to the first frame wiring is provided along a portion of one side of the display region, which is a side of the display region along the terminal portion.

15. The display device according to claim 14, wherein: include: The second metal protrusion electrically connected to the second frame wiring is arranged along the other part of one side of the display area and the three sides of the display area, wherein the one side of the display area is a side of the display area along the terminal part, and the three sides of the display area are three sides of the display area not along the terminal part.

16. The display device according to claim 11, wherein The second barrier wall includes a fourth resin protrusion. The fourth resin protrusion is provided on the second resin protrusion and is formed of the same material and the same layer as the edge cover.

17. The display device according to claim 1, wherein In the first planarizing film and the second planarizing film, a groove penetrating the first planarizing film and the second planarizing film is provided in a frame shape between the display region and the first slit.

18. The display device according to claim 17, wherein: The second electrode and the conductive layer are in contact with each other and are also disposed inside the trench.

19. The display device according to claim 17, wherein: A first metal layer is provided between the first slit and the groove as the second wiring layer so as to be electrically connected to the second frame wiring.

20. The display device according to any one of claims 1 to 3, wherein A second barrier wall is provided around the first barrier wall in a frame shape. On the second planarizing film, a second slit penetrating the second planarizing film is provided in a frame shape between the first barrier wall and the second barrier wall. In the second slit, the edge of the first frame wiring and the edge of the second frame wiring facing each other are covered by the protective film. A second metal layer is provided on the first frame wiring, the second metal layer being provided in a manner of covering the first frame wiring via the protective film and being electrically connected to the first frame wiring. A third metal layer is provided on the second frame wiring, the third metal layer being provided in a manner of covering the second frame wiring via the protective film and being electrically connected to the second frame wiring. The second metal layer and the third metal layer are composed of a lower metal film and an upper metal film, the lower metal film is composed of a titanium film provided on the base substrate side, and the upper metal film is composed of an aluminum film provided on the light emitting element layer side. The end portions of the second metal layer and the third metal layer are formed into a forward tapered shape in which the lower metal film protrudes beyond the upper metal film.

21. The display device according to claim 1 or 3, characterized in that The display area is set to a rectangular shape, Between the terminal portion side edge of the display region and the first slit, a terminal side metal layer electrically connected to the first frame wiring is provided as the second wiring layer. The terminal side metal layer is composed of a lower metal film and an upper metal film, the lower metal film is composed of a titanium film provided on the base substrate side, and the upper metal film is composed of an aluminum film provided on the light emitting element layer side. The end portion of the terminal-side metal layer is formed into a forward tapered shape in which the lower metal film protrudes beyond the upper metal film, and is covered with the second planarizing film.

22. The display device according to claim 1, wherein Each of the light-emitting layers is an organic electroluminescent layer.

Images