A pump system, process method, device and semiconductor process equipment

Abstract

The present invention provides a pump group system, a process method and a semiconductor process equipment, which are used for a semiconductor atomic layer deposition process. The pump group system comprises: a reaction chamber, wherein at least one precursor gas is introduced into the reaction chamber for a deposition reaction; a vacuum dry pump, which is connected to the reaction chamber through a gate valve and is used to extract residual gas in the reaction chamber; and at least one molecular pump, wherein one end of the molecular pump is connected to the reaction chamber and the other end is connected to the vacuum dry pump. After the precursor gases respectively undergo a deposition reaction, a carrier gas is introduced into the reaction chamber for purging, and the carrier gas then flows to the vacuum dry pump through the molecular pump for discharge, thereby reducing the gas pressure in the reaction chamber.

Description

Technical Field

[0001] The present invention relates to semiconductor deposition process equipment, and in particular to a pump group system, a process method, a device and semiconductor process equipment. Background Art

[0002] In the existing semiconductor deposition process flow, if each deposition step is to achieve a coverage rate of more than 90%, it is necessary to increase the concentration of the precursor reaction gas or the vacuum degree of the reaction chamber, thereby increasing the molecular free path of the gas.

[0003] However, the chamber pressure of the atomic layer deposition process in the prior art is usually in the range of 10 to 30 Torr. At this pressure level, the mean free path of molecules is low, and the coverage of atomic layer deposition is not ideal. In addition, for reactions involving multiple precursor gases, due to the characteristics of the atomic layer deposition process, the multiple gases are prone to react in the vacuum turbo pump, and the reactants are deposited inside the turbo pump, causing damage to the vacuum pump.

[0004] In order to overcome the above-mentioned defects of the prior art, the art is in urgent need of a pump system, process method, device and semiconductor process equipment for use in the atomic layer deposition process of semiconductors, which can reduce the gas pressure in the reaction chamber and thus increase the mean free path of molecules to enhance the coverage effect of deposition, while at the same time solving the problem of damage to equipment caused by the reaction and deposition of multiple gases in a turbo pump. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or critical elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a pump group system for use in a semiconductor atomic layer deposition process, the pump group system comprising: a reaction chamber, into which at least one precursor gas is introduced for a deposition reaction; a vacuum dry pump, which is connected to the reaction chamber through a gate valve and is used to extract residual gas in the reaction chamber; and at least one molecular pump, one end of which is connected to the reaction chamber, and the other end of which is connected to the vacuum dry pump. After the precursor gases undergo deposition reactions respectively, a carrier gas is introduced into the reaction chamber for purge, and the carrier gas then flows through the molecular pump to the vacuum dry pump for discharge, thereby reducing the gas pressure in the reaction chamber.

[0007] In one embodiment, preferably, the molecular pump corresponds to the precursor gas one by one, and after each precursor gas undergoes a deposition reaction, a purge operation is performed by the molecular pump corresponding to the precursor gas.

[0008] In one embodiment, preferably, an angle valve is provided at the air inlet and / or air outlet of the molecular pump to control the on-off of the gas.

[0009] In one embodiment, optionally, there are two kinds of the precursor gases, and two molecular pumps are provided in the pump group system, and the two molecular pumps correspond one to one to the two precursor gases.

[0010] In one embodiment, preferably, the precursor gas is also directly connected to the vacuum dry pump, so as to preload the precursor gas to stabilize the flow rate and pressure before the precursor gas is introduced into the reaction chamber for deposition reaction.

[0011] In one embodiment, preferably, an angle valve is provided on the pipeline directly connecting the precursor gas to the vacuum dry pump to control the on-off of the gas.

[0012] In one embodiment, preferably, a stop valve is provided at the gas outlet of the reaction chamber.

[0013] In one embodiment, preferably, the molecular pump is connected to the rear end of the stop valve.

[0014] In one embodiment, preferably, an angle valve is also provided on the pipeline connecting the precursor gas to the reaction chamber to control the on-off of the gas.

[0015] The present invention also provides a semiconductor process equipment for atomic layer deposition process, wherein the semiconductor process equipment comprises a pump group system as described in any one of the above items.

[0016] Another aspect of the present invention is a process method for atomic layer deposition, which adopts the pump group system as described above. The process method includes: introducing the precursor gas into the reaction chamber to carry out a deposition reaction, and at the same time exhausting the residual gas through the vacuum dry pump; and introducing the carrier gas into the reaction chamber to carry out a purge operation, and the carrier gas is exhausted by the vacuum dry pump after passing through the molecular pump, thereby reducing the gas pressure in the reaction chamber for subsequent deposition processes; and cyclically executing the above steps until the predetermined process requirements are met.

[0017] In one embodiment, preferably, the molecular pump corresponds to the precursor gas one-to-one, and the process method further includes: after each precursor gas is introduced into the reaction chamber for a deposition reaction, the purging operation is performed by the molecular pump corresponding to the precursor gas.

[0018] In one embodiment, preferably, the precursor gas is also directly connected to the vacuum dry pump, and the process method also includes: before each precursor gas is introduced into the reaction chamber for a deposition reaction, the precursor gas is first introduced into a pipeline directly connected to the vacuum dry pump to preload the precursor gas, thereby stabilizing its flow rate and pressure.

[0019] In one embodiment, preferably, the process method further comprises: when one precursor gas performs the preloading operation, the molecular pumps corresponding to the other precursor gases continue to output the carrier gas to the vacuum dry pump.

[0020] The present invention also includes an atomic layer deposition process device, including: a memory; and a processor coupled to the memory, wherein the processor is configured to execute any of the atomic layer deposition process methods described above.

[0021] The present invention also provides a computer-readable medium having a computer program stored thereon, and when the computer program is executed by a processor, the process method for atomic layer deposition described in any one of the above items is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0023] Figure 1 is a schematic diagram of the device structure of a pump system according to an embodiment of one aspect of the present invention;

[0024] Figure 2 to Figure 7 is a schematic diagram of gas flow in each step of an atomic layer deposition process according to an embodiment of the present invention; and

[0025] Figure 8 FIG. 4 is a schematic diagram of the structure of an atomic layer deposition process device according to another aspect of the present invention.

[0026] For the sake of clarity, a brief description of the reference numerals is given below:

[0027] 101 reaction chamber

[0028] 102 vacuum dry pump

[0029] 103a, 103b molecular pump

[0030] 104 valve

[0031] 105a, 105b, 105c, 105d angle valve

[0032] 106a, 106b, 107a, 107b angle valve

[0033] 108 stop valve DETAILED DESCRIPTION

[0034] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0035] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0037] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0038] In order to overcome the above-mentioned defects of the prior art, the present invention provides a pump group system, a process method, a device and a semiconductor process equipment for use in the atomic layer deposition process of semiconductors. The system can reduce the gas pressure in the reaction chamber to increase the mean free path of the molecules to enhance the coverage effect of the deposition, and at the same time solve the problem of damage to the equipment caused by the reaction and deposition of multiple gases in the turbo pump.

[0039] Figure 1 1 is a schematic diagram of the device structure of a pump system according to an embodiment of one aspect of the present invention.

[0040] Please refer to Figure 1 The pump system provided by the present invention is used for semiconductor atomic layer deposition process, and the pump system comprises: a reaction chamber 101, at least one precursor gas is introduced into the reaction chamber 101 for deposition reaction, such as Figure 1 As shown, this embodiment includes two precursor gases A and B. For the sake of clarity and simplicity, the following description will also be based on the two precursor gases A and B as examples.

[0041] Please continue to refer to Figure 1 The pump system provided by the present invention further includes a vacuum dry pump 102, which is connected to the reaction chamber 101 through a gate valve 104 and is used to extract residual gas in the reaction chamber 101; and at least one molecular pump, similarly, Figure 1 The illustrated embodiment includes two molecular pumps 103a and 103b, one end of the molecular pumps 103a and 103b are respectively connected to the reaction chamber 101, and the other end is respectively connected to the vacuum dry pump 102. After the precursor gases A and B undergo deposition reactions, a carrier gas is introduced into the reaction chamber 101 for purge, and the carrier gas then flows through the molecular pumps 103a and 103b to the vacuum dry pump 102 for discharge, thereby reducing the gas pressure in the reaction chamber 101, thereby increasing the molecular mean free path in the subsequent deposition steps, and thus increasing the deposition coverage.

[0042] like Figure 1 As shown, in a preferred embodiment, angle valves 107a and 107b are respectively provided on the pipelines connecting the precursor gases A and B to the reaction chamber, so as to control the on-off of the gases in the pipelines and thus control the gas flow direction.

[0043] In one embodiment, preferably, the molecular pump corresponds to the precursor gas one by one, and after each precursor gas undergoes a deposition reaction, a purge operation is performed by the molecular pump corresponding to the precursor gas.

[0044] For example, in Figure 1In the embodiment shown, there are two precursor gases A and B involved in the deposition reaction. Accordingly, two molecular pumps 103a and 103b are provided in the pump group system. The molecular pump 103a corresponds to the precursor gas A, and the molecular pump 103b corresponds to the precursor gas B. The gas flow direction in the specific steps will be elaborated in the method section below.

[0045] In one embodiment, preferably, an angle valve is provided at the air inlet and / or air outlet of the molecular pump to control the on-off of the gas.

[0046] For example, in Figure 1 In the embodiment shown, the molecular pump 103a is provided with an angle valve 105a at the inlet end and an angle valve 105c at the outlet end, and the molecular pump 103b is also provided with an angle valve 105b and an angle valve 105d at the inlet end and outlet end, respectively. It is easy to understand that the angle valves are provided at the corresponding positions of the pipeline to facilitate the control of the on-off of the gas in the pipeline and thus control the direction of the gas to meet the requirements of the process steps.

[0047] In one embodiment, preferably, please continue to refer to Figure 1 The precursor gases A and B are also directly connected to the vacuum dry pump 102 respectively, so as to preload the precursor gases to stabilize the flow rate and pressure before entering the reaction chamber 101 for deposition reaction.

[0048] Furthermore, if Figure 1 As shown, an angle valve 106a is provided on the pipeline directly connected to the vacuum dry pump 102 by the precursor gas A, and an angle valve 106b is provided on the pipeline directly connected to the vacuum dry pump 102 by the precursor gas B, for controlling the on-off of the gas in the pipeline.

[0049] In one embodiment, preferably, Figure 1 As shown, a stop valve 108 is provided at the gas outlet of the reaction chamber 101 . Further, the molecular pumps 103 a and 103 b are connected to the rear end of the stop valve 108 .

[0050] The pump group system provided by the present invention provides a corresponding molecular pump for each precursor gas. After each precursor gas undergoes a single deposition reaction, the corresponding molecular pump is turned on to perform carrier gas purging, thereby reducing the gas pressure in the reaction chamber and increasing the mean free path of the molecules to enhance the deposition coverage effect. At the same time, it can also solve the problem of damage to equipment caused by the reaction and deposition of multiple gases in the turbo pump.

[0051] Another aspect of the present invention provides a semiconductor process equipment for atomic layer deposition process, which includes a pump group system as described in any of the above items. The equipment can be used for process such as DRAM deposition of TiN / TiSiN, which has high requirements on molecular free path and deposition coverage.

[0052] Another aspect of the present invention is a process method for atomic layer deposition, which adopts the pump group system as described above. The process method includes: introducing the precursor gas into the reaction chamber to carry out a deposition reaction, and at the same time exhausting the residual gas through the vacuum dry pump; and introducing the carrier gas into the reaction chamber to carry out a purge operation, and the carrier gas is exhausted by the vacuum dry pump after passing through the molecular pump, thereby reducing the gas pressure in the reaction chamber for subsequent deposition processes; and cyclically executing the above steps until the predetermined process requirements are met.

[0053] In one embodiment, preferably, the molecular pump corresponds to the precursor gas one-to-one, and the process method further includes: after each precursor gas is introduced into the reaction chamber for a deposition reaction, the purging operation is performed by the molecular pump corresponding to the precursor gas.

[0054] In one embodiment, preferably, the precursor gas is also directly connected to the vacuum dry pump, and the process method also includes: before each precursor gas is introduced into the reaction chamber for a deposition reaction, the precursor gas is first introduced into a pipeline directly connected to the vacuum dry pump to preload the precursor gas, thereby stabilizing its flow rate and pressure.

[0055] In one embodiment, preferably, the process method further comprises: when one precursor gas performs the preloading operation, the molecular pumps corresponding to the other precursor gases continue to output the carrier gas to the vacuum dry pump. Figure 2 to Figure 7 The steps of the process method are specifically demonstrated, and the process method is specifically explained below with reference to the diagrams.

[0056] Figure 2 to Figure 7 FIG. 1 is a schematic diagram of gas flow in each step of an atomic layer deposition process according to an embodiment of the present invention. Figure 2 to Figure 7 In the figure, the thick dotted line represents the gas flow of the carrier gas, the single-dot dash line represents the gas flow of the precursor gas B, the double-dot dash line represents the gas flow of the precursor gas B, and the circle filled with slashes represents the valve that is open in the current state.

[0057] like Figure 2 As shown, first, the vacuum dry pump 102 and molecular pumps 103a and 103b are started simultaneously, and the angle valve 107a is opened to introduce the precursor gas A and the carrier gas first. On the other side, the angle valve 107b is opened without introducing the precursor gas B, and only the carrier gas is allowed to flow to the reaction chamber 101 from both sides, chemically adsorbed with the substrate, and then discharged to the vacuum dry pump 102.

[0058] Then as Figure 3As shown, the output of the precursor gas A is then closed, and only the carrier gas flows through the left pipeline to purge the cavity. The angle valve 105a is opened, and the molecular pump 103a extracts the excess reaction sources and by-products in the reaction chamber 101, and discharges them from the cavity through the vacuum dry pump 102. At this time, the gas flow speed in the reaction chamber 101 is faster and the pressure is lower, maintaining a higher vacuum environment, thereby increasing the mean free path of the molecules, so that the coverage of the subsequent deposition steps can be improved.

[0059] Then Figure 4 As shown, the angle valves 107a and 107b are then closed, and the angle valve 106b is opened. The precursor gas B flows to the vacuum dry pump 102 through the bypass to preload the precursor gas B. The preloading can make the pressure and flow rate of the gas output more stable, so that the stabilized precursor gas is input into the reaction chamber to prompt the reaction effect.

[0060] Please refer to Figure 5 At this time, in a relatively high vacuum environment, the bypass angle valve 106b is closed, and the angle valves 107a, 107b, the stop valve 108 and the gate valve 104 are opened. While the carrier gas passes through the pipelines on both sides, the precursor gas B flows to the reaction chamber 101, reacts with the substrate, and deposits a thin film.

[0061] Refer to Figure 6 Then, the output of the precursor gas B is closed, leaving only the carrier gas in the pipeline to purge the reaction chamber 101, and then flows to the vacuum dry pump 102 through the molecular pump 103b, thus avoiding the reaction and deposition of the precursor gas in the vacuum dry pump 102. At this time, one cycle of thin film deposition has been completed.

[0062] Finally Figure 7 As shown, the angle valves 107a and 107b are closed, and the angle valve 106a is opened. At this time, the precursor gas A enters the vacuum dry pump 102 through the bypass to perform the preloading work of the precursor gas A, and then returns to Figure 2 The process steps shown are repeated in a cycle until the preset process requirements are met, and the thin film deposition process is finally completed.

[0063] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0064] Figure 8 FIG. 4 is a schematic diagram of the structure of an atomic layer deposition process device according to another aspect of the present invention.

[0065] According to another aspect of the present invention, an embodiment of an atomic layer deposition process apparatus 800 is also provided herein.

[0066] like Figure 8 As shown, the atomic layer deposition process device 800 provided in this embodiment may include a memory 801 and a processor 802 coupled to the memory 801. The processor 802 may be configured to implement any of the atomic layer deposition process methods described above.

[0067] According to another aspect of the present invention, an embodiment of a computer storage medium is also provided herein.

[0068] The computer storage medium stores a computer program, which, when executed by a processor, can implement the steps of any of the above-mentioned atomic layer deposition process methods.

[0069] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0070] The processor described in this case can be implemented using electronic hardware, computer software or any combination thereof. Whether such processors are implemented as hardware or software will depend on the specific application and the overall design constraints imposed on the system. As an example, the processor presented in this disclosure, any part of the processor, or any combination of processors can be implemented with a microprocessor, a microcontroller, a digital signal processor (DSP), a field programmable gate array (FPGA), a programmable logic device (PLD), a state machine, a gated logic, a discrete hardware circuit, and other suitable processing components configured to perform various functions described throughout this disclosure. The functionality of the processor presented in this disclosure, any part of the processor, or any combination of processors can be implemented with software executed by a microprocessor, a microcontroller, a DSP or other suitable platforms.

[0071] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0072] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0073] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A pump group system for use in a semiconductor atomic layer deposition process, the pump group system comprising: A reaction chamber, into which a plurality of precursor gases are introduced to perform a deposition reaction; a vacuum dry pump, the vacuum dry pump being connected to the reaction chamber through a gate valve and being used for extracting residual gas in the reaction chamber; and A plurality of molecular pumps correspond one to one with the plurality of precursor gases, one end of which is connected to the reaction chamber, and the other end of which is connected to the vacuum dry pump, wherein after each of the precursor gases undergoes a deposition reaction, a carrier gas is first introduced into the reaction chamber for purge, and then the carrier gas is made to flow through the corresponding molecular pump to the vacuum dry pump for discharge, thereby reducing the gas pressure in the reaction chamber.

2. The pump system according to claim 1, characterized in that: An angle valve is provided at the air inlet and / or air outlet of the molecular pump to control the on-off of the gas.

3. The pump system according to claim 1, characterized in that: There are two kinds of precursor gases. Two molecular pumps are arranged in the pump group system. The two molecular pumps correspond to the two kinds of precursor gases one by one.

4. The pump system according to claim 1, characterized in that: The precursor gas is also directly connected to the vacuum dry pump, and is used to preload the precursor gas to stabilize the flow rate and pressure before entering the reaction chamber for deposition reaction.

5. The pump system according to claim 4, characterized in that: An angle valve is provided on the pipeline directly connecting the precursor gas to the vacuum dry pump to control the on and off of the gas.

6. The pump system according to claim 1, characterized in that: A stop valve is provided at the gas outlet end of the reaction chamber.

7. The pump system according to claim 6, characterized in that: The molecular pump is connected to the rear end of the stop valve.

8. The pump system according to claim 1, characterized in that: An angle valve is also provided on the pipeline connecting the precursor gas to the reaction chamber to control the on-off of the gas.

9. A semiconductor process equipment for atomic layer deposition process, characterized in that: A pump system comprising the pump set system as described in any one of claims 1 to 8.

10. A process for atomic layer deposition, using the pump system according to claim 1, the process comprising: sequentially introducing a plurality of precursor gases into the reaction chamber to perform a deposition reaction, and simultaneously exhausting residual gases through the vacuum dry pump; as well as After each of the precursor gases is introduced into the reaction chamber for deposition reaction, a carrier gas is introduced into the reaction chamber for purging, wherein the carrier gas is respectively discharged by the vacuum dry pump after passing through the molecular pumps corresponding to the precursor gases, thereby reducing the gas pressure in the reaction chamber for subsequent deposition process; The above steps are executed repeatedly until the predetermined process requirements are met.

11. The process according to claim 10, characterized in that: The precursor gas is also directly connected to the vacuum dry pump, and the process method further includes: Before each precursor gas is introduced into the reaction chamber for a deposition reaction, the precursor gas is first introduced into a pipeline directly connected to the vacuum dry pump to perform a pre-loading operation on the precursor gas, thereby stabilizing its flow rate and pressure.

12. The process according to claim 11, characterized in that: The process also includes: When one precursor gas performs the preloading operation, the molecular pumps corresponding to the other precursor gases continue to output the carrier gas to the vacuum dry pump.

13. A process device for atomic layer deposition, comprising: Memory; as well as A processor coupled to the memory, characterized in that the processor is configured to execute the atomic layer deposition process method as described in any one of claims 10 to 12.

14. A computer readable medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the process method for atomic layer deposition as described in any one of claims 10 to 12 is implemented.

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