Lamp for heating and heating device provided with same

Abstract

The present application provides a heating lamp capable of raising a wafer to a desired temperature in a short time and uniformly, and a heating device provided with the same. The heating lamp (100) is provided with a metal heat dissipation substrate (102), an insulating layer (104) arranged on the heat dissipation substrate (102), a plurality of wiring patterns (106) arranged on the insulating layer (104), a plurality of light source elements (108) arranged on the plurality of wiring patterns (106) respectively, a bonding material (109) electrically bonding the wiring patterns (106) and the light source elements (108), and a metal wiring (110) electrically connecting between adjacent light source elements (108).

Description

Technical Field

[0001] The present invention relates, for example, to a lamp for heating materials such as wafers, and a heating device having the same. Background Technology

[0002] In the past, devices for heating wafers used in semiconductor manufacturing using LED lights have been proposed (for example, Patent Document 1 and Patent Document 2).

[0003] Furthermore, in the semiconductor manufacturing process, for the purpose of screening out initial defective products, "aging" is sometimes carried out by heating the completed semiconductor after applying a load of voltage and operating frequency above the maximum rated value. It has also been proposed to use LED lights for the heating application of this aging process (for example, Patent Document 3).

[0004] Furthermore, given the advantages of LED lights, such as fast response speed and excellent dimming control, the use of LED lights in other heating processes that utilize existing halogen lamps was explored. These "other heating processes" include, for example, resist curing, oxidation treatment, preheating for flash annealing, and annealing under vacuum or pressure. Prior art literature Patent documents

[0005] Patent Document 1: JP Japanese Patent Application Publication No. 2012-178576 (Dome Type) Patent Document 2: JP Japanese Patent Publication No. 2005-536045 (Projectile Type) Patent Document 3: JP 2002-208620 Summary of the Invention The problem that the invention aims to solve

[0006] However, aging semiconductors in a finished state is extremely costly, leading some manufacturers to abandon this aging process in recent years. Alternatively, a "wafer-level aging" approach has been proposed, where aging is performed on the wafer while it's still in its wafer state, rather than starting from the finished state. While finished semiconductors typically require several hours to tens of hours of aging, wafer-level aging can sometimes be completed in tens of seconds, significantly reducing semiconductor manufacturing costs.

[0007] However, if wafer aging is to be implemented, the wafer needs to be heated to the required temperature in a short and uniform time. However, with the existing heating LEDs, it is not possible to heat the wafer uniformly in a short time, resulting in a lot of temperature fluctuations.

[0008] The present invention addresses the aforementioned problems and aims to provide a heating lamp and a heating device equipped with the lamp that can raise a wafer to the required temperature in a short time and uniformly. Technical solutions for solving the problem

[0009] According to one aspect of the present invention, a heating lamp is provided, comprising: Metal heat dissipation substrate; An insulating layer is disposed on the heat dissipation substrate; Multiple wiring patterns are configured on the insulating layer; Multiple light source elements are respectively disposed on multiple wiring patterns; A bonding material is used to electrically bond the wiring pattern to the light source element; and Metal wiring is used to electrically connect adjacent light source elements.

[0010] According to another aspect of the present invention, a heating lamp is provided, comprising: Ceramic insulating material; Multiple wiring patterns are disposed on the insulating material; Multiple light source elements are respectively disposed on multiple wiring patterns; A bonding material is used to electrically bond the wiring pattern to the light source element; and Metal wiring is used to electrically connect adjacent light source elements.

[0011] Preferably, the light source element uses a VCSEL element.

[0012] According to another aspect of the present invention, a heating device is provided, comprising: Multiple of the above-mentioned lights; Heat dissipation components, with the lamp mounted via a thermally conductive material; and An electric driver drives the light source element.

[0013] Preferably, the plurality of light source elements disposed in each of the lamps are divided into multiple groups. The electric driver drives the light source element separately for each of the groups.

[0014] Preferably, the electric driver controls the light source element at staggered timings for each of the groups.

[0015] Preferably, the lamp is mounted on the heat dissipation component in such a way that a gap can be formed between the lamp and the adjacent lamps on the entire circumference or a part of the circumference.

[0016] Preferably, at least one of a temperature sensor for measuring the temperature of the heated wafer and an infrared camera is disposed in the gap.

[0017] Preferably, the electric driver adjusts the current supplied to the lamp based on the temperature of the wafer detected by at least one of the temperature sensor and the infrared camera.

[0018] Preferably, the electric driver increases the current supplied to the light source element based on the deterioration of the light source element over time.

[0019] Preferably, the electric driver adjusts the current supplied to each of the lamps according to the deterioration of the light source element in each of the lamps over the years.

[0020] Preferably, the heating device further includes a filter, which is disposed between the lamp and the wafer. The filter blocks light with wavelengths longer than those detected by the temperature sensor and the infrared camera. Invention Effects

[0021] In the heating lamp of the present invention, the light source element is electrically bonded to the wiring pattern via a bonding material, which can prevent the temperature of the light source element itself from becoming too high, thereby enabling the wafer to rise to the required temperature in a short time and uniformly. Attached Figure Description

[0022] Figure 1 This is a cross-sectional view of the lamp 100 to which an embodiment of the present invention applies. Figure 2 This is a cross-sectional view of the heating device 150 to which the embodiments of the present invention are applicable. Figure 3 This is a top view of the heating device 150 to which the embodiments of the present invention are applicable. Figure 4 This is a top view of the heating device 150 involved in another example. Figure 5 This is a top view of the heating device 150 involved in another example. Figure 6 This is a cross-sectional view of the lamp 100 involved in variation example 1. Figure 7 This is a top view of the heating device 150 involved in Modified Example 1. Figure 8 This is a diagram showing the heating device 150 involved in Modification Example 5. Detailed Implementation

[0023] (Structure of heating lamp 100) The accompanying drawings illustrate the heating lamp 100 to which the present invention applies. Figure 1 This is a diagram showing the lamp 100 according to this embodiment.

[0024] The lamp 100 in this embodiment is generally composed of a heat dissipation substrate 102, an insulating layer 104, a wiring pattern 106, a VCSEL element 108 as a light source element, a bonding material 109, and a metal wiring 110.

[0025] The heat dissipation substrate 102 is a metal plate, which, as described later, is mounted on the heat dissipation component 152. The material of the heat dissipation substrate 102 is generally copper, aluminum, or their alloys. Furthermore, the metal forming the heat dissipation substrate 102 is not particularly limited, and its conductivity is irrelevant, but a material with high thermal conductivity is preferred.

[0026] An insulating layer 104 is disposed on the heat dissipation substrate 102 and can be made of ceramic materials such as alumina, aluminum nitride, and silicon carbide, diamond-like carbon, or resins with good thermal conductivity and high insulation properties. Furthermore, the insulating layer 104 can be formed using methods such as spray deposition, CVD deposition, or printing deposition. Regardless of the method, the insulating layer 104 is not particularly limited as long as it prevents undesirable conductivity between the wiring pattern 106 and the heat dissipation substrate 102.

[0027] The wiring pattern 106 serves to supply power to the VCSEL element 108 and is formed in accordance with the number of VCSEL elements 108 mounted on the surface of the insulating layer 104. In addition, adjacent wiring patterns 106 are arranged separately to ensure electrical insulation between the two wiring patterns 106.

[0028] Materials for wiring pattern 106 could include, for example, copper, tungsten, tantalum, molybdenum, niobium, nickel, palladium, gold, silver, etc.

[0029] The VCSEL element 108, serving as a light source, is a surface-emitting semiconductor laser array element disposed on multiple wiring patterns 106, capable of emitting light in a direction perpendicular to the substrate surface. The wavelength of the light emitted from this VCSEL element 108 is preferably 600 nm or more and 1200 nm or less. The reason for preferring 600 nm or more is that if the wavelength is shorter, the wavelength absorption characteristics of the silicon wafer will decrease. Furthermore, the reason for preferring 1200 nm or less is that the wavelength absorption characteristics of the silicon wafer peak at 1200 nm; if the wavelength is longer than this, its wavelength absorption characteristics will decrease sharply.

[0030] The bonding material 109 is a material used to electrically bond the wiring pattern 106 to the VCSEL element 108, such as a chip adhesive. Of course, bonding materials other than chip adhesives can also be used as bonding material 109, and the form of bonding material 109 can be a solid bonding material or a paste-like bonding material.

[0031] Metal wiring 110 is a component that electrically connects adjacent VCSEL elements 108. Metal wiring 110 uses methods such as wire bonding.

[0032] (Structure of heating device 150) Next, the structure of the heating device 150 equipped with the aforementioned heating lamp 100 will be described. This heating device 150 is used to heat materials such as wafers through aging or other heating processes. Figure 2 as well as Figure 3 As shown, it generally includes multiple lamps 100, a heat dissipation component 152, and an electric driver 154. Furthermore, it is preferable to use a heating device 150 to heat the workpiece to 100°C or higher. For example, in a drying process, the wafer is heated to slightly above 100°C, and in processes such as annealing, the wafer is heated to 600°C or higher.

[0033] The heat dissipation component 152 is a component for mounting the aforementioned plurality of lamps 100. Specifically, the heat dissipation substrate 102 of each lamp 100 is mounted on the surface of the heat dissipation component 152 via a thermally conductive material (a lubricant or sheet with high thermal conductivity) 155.

[0034] The heat dissipation component 152 is formed of a material with high thermal conductivity, such as copper or aluminum, and receives the heat generated in the VCSEL element 108 through the thermally conductive material 155 via air cooling or water cooling.

[0035] Furthermore, when multiple lamps 100 are mounted on the heat dissipation component 152, each lamp 100 is arranged such that a gap S can be formed between a lamp 100 and an adjacent lamp 100, either around its entire circumference or a portion thereof. Moreover, a "part of the entire circumference" can be, for example, as... Figure 4 As shown, adjacent lamps 100 separate a portion of their outer periphery to form a gap S, or as shown in the diagram. Figure 5 As shown, a notch K (an elongated hole in the example) is created along the outer periphery of lamp 100. Although the outer periphery of lamp 100 is connected to the outer periphery of adjacent lamp 100, there is a notch K between a portion of VCSEL element 108 in lamp 100 and a portion of VCSEL element 108 in adjacent lamp 100. This situation also conforms to the "gap S exists in a portion of the whole circumference".

[0036] The electric driver 154 is a component that supplies power for emitting light to the plurality of VCSEL elements 108 disposed in each lamp 100. In the case of the heating device 150 according to this embodiment, the plurality of VCSEL elements 108 disposed in one lamp 100 are divided into a plurality of groups (three in this embodiment) 156a, 156b, 156c, and the electric driver 154 can drive the VCSEL elements 108 belonging to each of the plurality of groups 156a, 156b, 156c respectively.

[0037] For example, the electric driver 154 preferably controls each VCSEL element 108 at staggered timings for each of groups 156a, 156b, and 156c. This is because if groups 156a, 156b, and 156c of VCSEL elements 108 are turned on simultaneously, uniform heating cannot be achieved due to the misalignment between the power supply (electric driver 154) and the VCSEL elements 108. As an example of "staggered timing," groups 156a, 156b, and 156c that are closer to areas with high discrete heat (such as near wafer support pins) are given priority for lighting up.

[0038] Furthermore, regarding the number of electric actuators 154, there can be only one in a heating device 150, or one electric actuator 154 corresponding to each lamp 100. Alternatively, multiple lamps 100 that are part of the lamps arranged in the heating device 150 may correspond to one electric actuator 154.

[0039] (Features of the heating lamp 100 and the heating device 150) According to the heating lamp 100 and heating device 150 of this embodiment, a VCSEL element 108 is used as a heat source (light source) for heating. The wavelength of the light emitted from the VCSEL element 108 is on the longer wavelength side compared to the light emitted from the LED, thus effectively increasing the temperature of the wafer.

[0040] (Variation Example 1) Although in the lamp 100 described above, an insulating layer 104 is formed on a metal heat dissipation substrate 102 and a wiring pattern 106 is arranged on its upper surface, this solution can be replaced by, for example... Figure 6 As shown, the lamp 100 is constructed using a ceramic insulating material 210, a plurality of wiring patterns 106 disposed on the insulating material 210, a plurality of VCSEL elements 108 disposed on the plurality of wiring patterns 106, and a metal wire 110 that electrically connects adjacent VCSEL elements 108.

[0041] (Variation Example 2) Furthermore, although in the heating device 150 described above, when multiple lamps 100 are installed on the heat dissipation component 152, each lamp 100 is arranged with a gap S between it and an adjacent lamp 100, either around its entire circumference or a portion thereof, it is also possible to arrange them as follows: Figure 7 As shown, at least one of a temperature sensor 160 and an infrared camera 162 is disposed in the gap S to measure the temperature of the heated wafer. Figure 5 It is equipped with both a temperature sensor 160 and an infrared camera 162.

[0042] For example, a photoelectromotive force (EMF) element such as a photodiode can be used as the temperature sensor 160. In this case, the (infrared) wavelength measured for temperature detection is set to be longer than the wavelength of the light emitted from the VCSEL element 108. Specifically, the sensitivity wavelength of the photoelectromotive force element used for temperature detection is set to be 1.0 μm or more and 3.0 μm or less. Furthermore, for measuring low temperatures, a photoelectromotive force element with a sensitivity wavelength of 3.0 μm or more and 8.0 μm or less can be additionally used.

[0043] Therefore, since the temperature of the wafer can be known while heating is being performed using the heating device 150, it becomes easy to properly manage the heating temperature of the wafer.

[0044] Furthermore, the current supplied by the electric driver 154 to the lamp 100 can be adjusted based on the wafer temperature detected by at least one of a temperature sensor and an infrared camera. This allows for more appropriate management of the wafer's heating temperature.

[0045] As an example of "adjusting the current value supplied by the electric driver 154 to the lamp 100", the following example is given: the output signal from the illuminance sensor that measures the illuminance of the light emitted from the lamp 100 is directly input to the electric driver 154 as a dimming signal via an inverting amplifier circuit, and the current value is adjusted based on this output signal (dimming signal). Therefore, compared to existing processes that use a microcomputer and sequencer to receive the illuminance sensor signal and then adjust the current value, processing can be performed at a much higher speed.

[0046] (Variation Example 3) Furthermore, although multiple lamps 100 are configured for one heat dissipation component 152 in the above embodiment, this approach can be replaced by preparing heat dissipation components 152 according to the number of lamps 100, and installing one lamp 100 for each heat dissipation component 152. Thus, by adjusting the amount of water supplied to each heat dissipation component 152 (in the case of water cooling) and the airflow (in the case of air cooling), the heat dissipation from each heat dissipation component 152 can be adjusted, thereby adjusting the temperature of the VCSEL element 108 in the corresponding lamp 100.

[0047] (Variation Example 4) Additionally, the electric driver 154 can be controlled to increase the current supplied to the VCSEL element 108 based on its degradation over time. Since the light output of the VCSEL element 108 decreases with age, the current supplied to the VCSEL element 108 is increased to address this situation, thereby maintaining a constant light output and enabling constant illumination operation.

[0048] Furthermore, regarding the control performed by the electric driver 154, the current supplied to each lamp 100 can be adjusted according to the deterioration of the VCSEL element 108 in each lamp 100 over the years.

[0049] (Variation Example 5) Alternatively, it can be like Figure 8 As shown, a filter 200 is disposed between the lamp 100 and the wafer W. This filter 200 has the function of blocking light with wavelengths longer than those detected by the temperature sensor and infrared camera.

[0050] Therefore, the radiant heat H (infrared light) emitted by the wafer W after being heated by the light L from the lamp 100 can be blocked by the filter 200 so that it cannot reach the lamp 100, thus preventing the lamp 100, especially the VCSEL element 108, from accidentally becoming too high.

[0051] (Variation Example 6) This concludes the example of using VCSEL element 108 as a light source element, but LED elements can also be used instead of VCSEL element 108 as a light source element.

[0052] Furthermore, when the same amount of light energy is irradiated onto the silicon wafer, the light emitted from the VCSEL element 108, which is closer to infrared light (longer wavelength) than the light of the visible light region emitted from the LED element, has a higher absorption rate by the wafer, which is more beneficial for increasing the temperature of the wafer. Therefore, the VCSEL element 108 is preferred as the light source element.

[0053] It should be understood that the embodiments disclosed herein are merely illustrative and not limiting in all respects. The scope of the invention is defined not by the foregoing description but by the claims, and is intended to include all modifications within the scope and meaning equivalent to the claims. (Label Explanation)

[0054] 100 Heating lamp, 102 Heat sink substrate, 104 Insulating layer, 106 Wiring pattern, 108 VCSEL component, 109 Bonding material, 110 Metal wiring 150 Heating device, 152 Heat dissipation component, 154 Electric actuator, 155 Thermally conductive material, 156 (Group of VCSEL element 108) 160 temperature sensor, 162 infrared camera 200 filter, 210 insulation material L light, S gap (between adjacent lamps 100), W wafer, K notch, H radiant heat.

Claims

1. A heating device comprising: Multiple heating lamps; The lamp has the following features: Metal heat dissipation substrate; An insulating layer is disposed on the heat dissipation substrate; Multiple wiring patterns are configured on the insulating layer; Multiple light source elements are respectively disposed on multiple wiring patterns; A bonding material is used to electrically bond the wiring pattern to the light source element; as well as Metal wiring is used to electrically connect adjacent light source elements; A heat dissipation component is used to mount the lamp via a thermally conductive material; as well as An electric driver drives the light source element; The lamp is mounted on the heat dissipation component in such a way that a gap can be formed between the lamp and the adjacent lamps, either around the entire circumference or a portion thereof. At least one of a temperature sensor for measuring the temperature of the heated wafer and an infrared camera is disposed in the gap. The heating device also includes a filter, which is disposed between the lamp and the wafer. The filter blocks light with wavelengths longer than those detected by the temperature sensor and the infrared camera. The wavelength detected by the temperature sensor and the infrared camera is above 1.0 μm and below 8.0 μm.

2. A heating device, comprising: Multiple heating lamps; The lamp has the following features: Ceramic insulating material; Multiple wiring patterns are disposed on the insulating material; Multiple light source elements are respectively disposed on multiple wiring patterns; A bonding material is used to electrically bond the wiring pattern to the light source element; as well as Metal wiring is used to electrically connect adjacent light source elements; A heat dissipation component is used to mount the lamp via a thermally conductive material; as well as An electric driver drives the light source element; The lamp is mounted on the heat dissipation component in such a way that a gap can be formed between the lamp and the adjacent lamps, either around the entire circumference or a portion thereof. At least one of a temperature sensor for measuring the temperature of the heated wafer and an infrared camera is disposed in the gap. The heating device also includes a filter, which is disposed between the lamp and the wafer. The filter blocks light with wavelengths longer than those detected by the temperature sensor and the infrared camera. The wavelength detected by the temperature sensor and the infrared camera is above 1.0 μm and below 8.0 μm.

3. The heating device according to claim 1 or 2, wherein, The light source element uses a VCSEL component.

4. The heating device according to claim 1 or 2, wherein, The plurality of light source elements disposed in each of the lamps are divided into multiple groups. The electric driver drives the light source element separately for each of the groups.

5. The heating device according to claim 4, wherein, The electric driver controls the light source element at staggered timings for each of the groups.

6. The heating device according to claim 1 or 2, wherein, The electric driver adjusts the current supplied to the lamp based on the temperature of the wafer detected by at least one of the temperature sensor and the infrared camera.

7. The heating device according to claim 1 or 2, wherein, The electric driver increases the current supplied to the light source element based on its deterioration over time.

8. The heating device according to claim 1 or 2, wherein, The electric driver adjusts the current supplied to each of the lamps according to the deterioration of the light source elements in each lamp over the years.

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