Optical sensing device

Abstract

The present invention provides an optical sensing device, comprising: a substrate; a light-sensing element disposed on the substrate; a light-shielding layer disposed on the light-sensing element, including a first opening overlapping the light-sensing element; an insulating layer disposed on the light-shielding layer, including a second opening overlapping the first opening; a light-shielding element disposed on a wall of the second opening; and a light-collecting element disposed on the insulating layer and overlapping the second opening.

Description

Technical Field

[0001] This invention relates to an optical sensing device, and more particularly to an optical sensing device capable of collimating light. Background Technology

[0002] Optical collimation structures allow optical sensing devices to adjust the direction of light travel, for example, by converting stray light (such as reflected light or other light not originating from a light source) into collimated light. Generally, optical collimation structures can be array structures, which may include multiple aperture layers. In existing optical sensing device manufacturing processes, multiple aperture layers can be fabricated using multilayer films to achieve the focusing distance required by the lens. However, thick films are typically fabricated using organic materials, which not only incurs higher material costs but also involves complex manufacturing processes. Summary of the Invention

[0003] The present invention provides an optical sensing device, comprising: a substrate; a light-sensing element disposed on the substrate; a light-shielding layer disposed on the light-sensing element, including a first opening overlapping the light-sensing element; an insulating layer disposed on the light-shielding layer, including a second opening overlapping the first opening; a light-shielding element disposed on a wall of the second opening; and a light-collecting element disposed on the insulating layer and overlapping the second opening.

[0004] The present invention also provides an optical sensing device, comprising a substrate; a light-sensing element disposed on the substrate; a light-shielding layer disposed on the light-sensing element, including a first opening overlapping the light-sensing element; an insulating layer disposed on the light-shielding layer, including a second opening overlapping the first opening; and a light-collecting element disposed on the insulating layer, at least a portion of the light-collecting element being located within the second opening; wherein a first refractive index of the insulating layer is greater than a second refractive index of the light-collecting element. Attached Figure Description

[0005] Figure 1 This is a schematic diagram of an optical sensing device according to Embodiment 1 of the present invention.

[0006] Figure 2 This is a schematic diagram of an optical sensing device according to Embodiment 1 of the present invention.

[0007] Figure 3 This is a schematic diagram of an optical sensing device according to Embodiment 1 of the present invention.

[0008] Figure 4 This is a schematic diagram of an optical sensing device according to Embodiment 1 of the present invention.

[0009] Figure 5 This is a schematic diagram of calculating the radius of curvature of a spherical mirror using a light-collecting element according to Embodiment 1 of the present invention.

[0010] Figure 6 This is a schematic diagram of an optical sensing device according to Embodiment 1 of the present invention.

[0011] Explanation of reference numerals in the attached figures: 10, 20, 30, 40, 60 - Optical sensing device; 100 - Substrate; 101 - First semiconductor layer; 102 - First insulating layer; 103 - First conductive layer; 104 - Second insulating layer; 105 - Second conductive layer; 106 - Third insulating layer; 107 - Third conductive layer; 108 - Fourth insulating layer; 109 - Fourth conductive layer; 110 - Fifth insulating layer; 112 - Photosensitive element; 1120 - Second semiconductor layer; 1121 - Intrinsic semiconductor layer; 1122 - Third semiconductor layer; 113 - Fifth conductive layer; 120 - Light-shielding layer; 122 - First opening; 130 - Sixth insulating layer; 13 1 - Upper surface of the sixth insulating layer; 132 - Second opening; 133 - Wall of the second opening; 134 - Light-shielding element; 140 - Light-collecting element; WB1 - First bottom width; WB2 - Second bottom width; WB3 - Third bottom width; WT2 - Second top width; P1 - First light path; P2 - Second light path; N1 - First refractive index; N2 - Second refractive index; N3 - Third refractive index; R - Chord; R' - Radius of curvature of the spherical mirror; F - Focusing distance; LT - First thickness; OT - Second thickness; PT - Third thickness; ST - Fourth thickness; CP1, CP2, CP3 - End points; CT - Center of the spherical mirror; θ - Included angle. Detailed Implementation

[0012] The present invention can be understood by referring to the following detailed description and the accompanying drawings. It should be noted that, for ease of understanding and for the sake of simplicity, the various drawings in this invention only depict a portion of the optical sensing device, and specific elements in the drawings are not drawn to scale. Furthermore, the number and size of the elements in the drawings are for illustrative purposes only and are not intended to limit the scope of the invention.

[0013] Throughout this specification and claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements. This document is not intended to distinguish between elements that function identically but have different names.

[0014] In the following description and claims, the word "comprising" is an open-ended term and should therefore be interpreted as "including but not limited to...".

[0015] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are merely for reference to the accompanying drawings. Therefore, the directional terms used are illustrative and not intended to limit the invention. In the accompanying drawings, the various figures illustrate general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of various films, regions, and / or structures may be reduced or enlarged.

[0016] It should be understood that when an element, membrane, or structure is referred to as being "on" another element or membrane, it can be directly on that other element or membrane, or there can be an inserted element or membrane between them (indirect cases). Conversely, when an element is referred to as being "directly" on another element or membrane, there is no inserted element or membrane between them. Electrical connections can be direct electrical connections or indirect electrical connections through other elements. The terms "joining" and "connection" can also include cases where both structures are movable or both structures are fixed.

[0017] The terms "equal to" or "approximately" typically mean falling within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. A given value or range can be measured or observed using an optical microscope (OM) or a scanning electron microscope (SEM).

[0018] The term "within the range from the first value to the second value" means that the range includes the first value, the second value, and other values ​​in between.

[0019] Although the terms first, second, third… can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by first, second, third… in the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.

[0020] It should be understood that the technical features of several different embodiments can be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0021] Figure 1 This is a schematic diagram of the optical sensing device 10 according to Embodiment 1 of the present invention. Figure 1As shown, the X-axis, Y-axis, and Z-axis are perpendicular to each other, where the Z-axis is the normal direction of a substrate 100. The optical sensing device 10 may include a substrate 100, a first semiconductor layer 101, a first insulating layer 102, a first conductive layer 103, a second insulating layer 104, a second conductive layer 105, a third insulating layer 106, a third conductive layer 107, a fourth insulating layer 108, a fourth conductive layer 109, a fifth insulating layer 110, a photosensing element 112, a fifth conductive layer 113, a light-shielding layer 120, a sixth insulating layer 130, a light-shielding element 134, and a light-collecting element 140.

[0022] In some embodiments, at least a portion of the first semiconductor layer 101, at least a portion of the first conductive layer 103, and at least a portion of the second conductive layer 105 may form a thin-film transistor. In some embodiments, a photosensitive element 112 may be electrically connected to the thin-film transistor through a third conductive layer 107. In some embodiments, different photosensitive elements 112 may be electrically connected to each other through a fourth conductive layer 109 and a fifth conductive layer 113.

[0023] like Figure 1 As shown, a photosensitive element 112 may be disposed on a substrate 100. A light-shielding layer 120 may be disposed on the photosensitive element 112, and may include a first opening 122 overlapping the photosensitive element 112. The first opening 122 may be formed by coating material and then performing a photolithography process, or by depositing material and then performing photolithography and etching patterning, but is not limited thereto. A sixth insulating layer 130 may be disposed on the light-shielding layer 120, and may include a second opening 132 overlapping the first opening 122. The second opening 132 may be formed by coating material and then performing a photolithography process, or by depositing material and then performing photolithography and etching patterning, but is not limited thereto. A light-shielding element 134 may be disposed on the sixth insulating layer 130. A light-collecting element 140 may be disposed on the sixth insulating layer 130. The light-collecting element 140 may overlap the second opening 132. The first opening 122 may include the area between the light-shielding layers 120. The second opening 132 may include the area between the sixth insulating layers 130.

[0024] In this embodiment, by placing the light-shielding element 134 on the sixth insulating layer 130, stray light (such as reflected light or other light not from the light source) can be absorbed or reflected to block stray light interference.

[0025] In some embodiments, the light-shielding element 134 may be disposed on the upper surface 131 of the sixth insulating layer 130, and at least a portion of the light-shielding element 134 may be located within the second opening 132. In some embodiments, at least a portion of the light-shielding element 134 may be disposed on the hole wall 133 of the second opening 132. For example, the hole wall 133 of the second opening 132 may include the region from the top of the sixth insulating layer 130 (e.g., measured from the point of surface curvature change) to the bottom of the sixth insulating layer 130.

[0026] In some embodiments, at least a portion of the light-collecting element 140 may be located within the second opening 132. In some embodiments, at least a portion of the light-collecting element 140 may be located within the first opening 122.

[0027] In some embodiments, the light-collecting element 140 may overlap the same pixels or different pixels. In some embodiments, the light-collecting element 140 may overlap the same or different sub-pixels. In some embodiments, the overlap may include complete overlap or partial overlap.

[0028] It should be noted that, in order to facilitate reader understanding and for the sake of brevity in the text description, the materials of each film layer and / or element are described after the diagrams.

[0029] In some embodiments, the light-shielding element 134 may include a light-absorbing material. In some embodiments, the light-shielding element 134 may include a reflective material.

[0030] In some embodiments, the light-shielding layer 120 and the light-shielding element 134 may comprise the same material. For example, both the light-shielding layer 120 and the light-shielding element 134 may comprise a reflective material, or both may comprise a light-absorbing material. In some embodiments, the light-shielding layer 120 and the light-shielding element 134 may comprise different materials. For example, the light-shielding layer 120 may comprise a reflective material and the light-shielding element 134 may comprise a light-absorbing material, or the light-shielding layer 120 may comprise a light-absorbing material and the light-shielding element 134 may comprise a reflective material.

[0031] In some embodiments, in a cross-sectional direction, the first opening 122 may have a first bottom width WB1 located at the bottom of the first opening 122 (i.e., the side near the substrate 100), and the second opening 132 may have a second bottom width WB2 and a second top width WT2 located at the bottom (i.e., the side near the substrate 100) and the top (i.e., the side away from the substrate 100) of the second opening 132, respectively. In some embodiments, the first bottom width WB1 may be smaller than the second bottom width WB2. In some embodiments, the first bottom width WB1 may be equal to the second bottom width WB2. In some embodiments, the second bottom width WB2 may be smaller than the second top width WT2. In some embodiments, the second bottom width WB2 may be equal to the second top width WT2.

[0032] In this embodiment, the light-shielding element 134 is disposed on the upper surface 131 of the sixth insulating layer 130 and on the hole wall 133 of the second opening 132. Furthermore, in this embodiment, the first bottom width WB1 can be equal to the second bottom width WB2, and the second bottom width WB2 can be smaller than the second top width WT2. That is, the width of the second opening 132 is smaller the closer it is to the substrate 100, and the hole wall 133 of the second opening 132 and the substrate 100 can form an angle θ of less than 90 degrees. This design absorbs or reflects more stray light from different paths. In different embodiments, the same technical features can be present without departing from the spirit of the invention.

[0033] Figure 2 This is a schematic diagram of the optical sensing device 20 according to Embodiment 1 of the present invention. Compared to Figure 1 The optical sensing device 10 and optical sensing device 20 may not include the light-shielding layer 120. The light-shielding element 134 may include, but is not limited to, light-absorbing or reflective materials. Figure 2 As shown, the hole wall 133 of the second opening 132 may include a region along the Z-axis from the top of the sixth insulating layer 130 (e.g., starting from the point of surface curvature change) to the bottom of the sixth insulating layer 130. A light-shielding element 134 may be disposed on the upper surface 131 of the sixth insulating layer 130 and on the hole wall 133 of the second opening 132. Alternatively, the light-shielding element 134 may be disposed on the fifth insulating layer 110, which may include a third opening 135 overlapping the second opening 132, the third opening 135 having a third bottom width WB3.

[0034] In this embodiment, by providing a light-shielding element 134 on the sixth insulating layer 130, stray light (such as reflected light or other light not from the light source) is absorbed or reflected to block stray light from passing through.

[0035] Furthermore, the second bottom width WB2 can be equal to the second top width WT2, meaning that the overall width of the second opening 132 (e.g., the top and bottom) is equal, while the second bottom width WB2 can be greater than the third bottom width WB3. This results in a smaller opening width near the substrate 100, allowing for the absorption or reflection of more stray light from different paths. In different embodiments, the same technical features can be present without departing from the spirit of the invention.

[0036] Figure 3 This is a schematic diagram of the optical sensing device 30 according to Embodiment 1 of the present invention. Compared to Figure 1 In the optical sensing device 10, the second bottom width WB2 can be equal to the second top width WT2. That is, the overall width of the second opening 132 (e.g., the top and bottom) is equal, while the second bottom width WB2 can be greater than the first bottom width WB1. This makes the opening width near the substrate 100 smaller, allowing for the absorption or reflection of more stray light from different paths. In different embodiments, the same technical features can be present without departing from the spirit of the invention.

[0037] Figure 4 This is a schematic diagram of the optical sensing device 40 according to Embodiment 1 of the present invention. Compared to Figure 1 The optical sensing device 10 and optical sensing device 40 may not include a light-shielding element 134. The light-collecting element 140 may have a first refractive index N1, and the sixth insulating layer 130 may have a second refractive index N2. The external medium (e.g., air or material surrounding the light-collecting element) of the light-collecting element 140 facing the user may have a third refractive index N3. In this embodiment, the first refractive index N1 of the light-collecting element 140 may be in the range of 1.4 to 1.65 (1.4 ≤ N1 ≤ 1.65); the second refractive index N2 of the sixth insulating layer 130 may be greater than 1.7; and the third refractive index N3 of the external medium may be in the range of 1 to 1.2 (1 ≤ N3 ≤ 1.2).

[0038] like Figure 4 As shown, according to the first optical path P1 and the second optical path P2, when the second refractive index N2 of the sixth insulating layer 130 is greater than the first refractive index N1 of the light-collecting element 140, when light travels from the optically denser medium (e.g., the sixth insulating layer 130) to the optically less dense medium (e.g., the light-collecting element 140), the light will undergo total internal reflection in the medium with the higher refractive index, reducing the possibility of light passing through the sixth insulating layer to other elements. In other words, through this design, stray light (e.g., reflected light and other light not from the light source) is totally reflected in the sixth insulating layer 130 to block stray light from passing through the sixth insulating layer 130. Different embodiments may have the same technical features without departing from the spirit of the invention.

[0039] Furthermore, the first bottom width WB1 can be smaller than the second bottom width WB2, and the second bottom width WB2 can be equal to the second top width WT2. That is, the overall width of the second opening 132 (e.g., the top and bottom) is equal, while the second bottom width WB2 is greater than the first bottom width WB1. This allows the opening width near the substrate 100 to be smaller, enabling the absorption or reflection of more stray light from different paths. In some embodiments, the light-shielding layer 120 can be first opened to form the first opening 122, and then a sixth insulating layer 130 and a light-collecting element 140 can be disposed on the light-shielding layer 120. In some embodiments, the second bottom width WB2 can be smaller than the second top width WT2.

[0040] Figure 5 This is a schematic diagram illustrating the calculation of the radius of curvature of the spherical mirror by the light-collecting element 140 in an embodiment of the present invention. Figure 5 As shown, the X, Y, and Z axes are perpendicular to each other, with the Z axis being the normal direction of the substrate 100. Please also refer to... Figure 4 and Figure 5 In one cross-sectional direction, the spherical mirror radius of curvature R' of the light-collecting element 140 can be obtained (e.g., calculated) based on the distance between the two endpoints CP1 and CP2 of the light-collecting element 140 contacting the top of the sixth insulating layer 130.

[0041] For example, based on the contact surface (e.g., a circle) between the light-collecting element 140 and the top of the spherical mirror and the sixth insulating layer 130, the chord R of the light-collecting element 140 can be obtained (e.g., calculated) as the shortest distance between the two endpoints CP1 and CP2. Along the Z-axis, based on the endpoint CP3 of the light-collecting element 140 furthest from the top of the sixth insulating layer 130 and a point on the virtual surface formed by the top of the sixth insulating layer 130 (e.g., its extension) or a point on the straight line formed by the two endpoints CP1 and CP2, such as... Figure 4 The shortest distance between the dashed lines (R and R) and the first thickness LT can be obtained (e.g., calculated), where the measurement directions of the chord R and the first thickness LT are perpendicular to each other. Then, the radius of curvature of the spherical mirror can be determined according to equation (1):

[0042] R' 2 = ((1 / 2)R) 2 +(R' - LT) 2 (1)

[0043] The radius of curvature R' of the spherical mirror in the light-collecting element 140 can be obtained (e.g., calculated) based on the distance between the two ends of the straight line passing through the center CT of the spherical mirror in the light-collecting element 140. For example, the radius of curvature R' of the spherical mirror can be half the distance between the two ends of the straight line passing through the center CT in the light-collecting element 140.

[0044] In addition, such as Figure 4and Figure 5 As shown, along the Z-axis, the focusing distance F can be obtained (e.g., calculated) based on the shortest distance between the endpoint CP3, the furthest point from the top of the sixth insulating layer 130 in the light-collecting element 140, and the top of the photosensitive element 112 (e.g., the top of the third semiconductor layer 1122). In some embodiments, the relationship between the first refractive index N1, the third refractive index N3, the focusing distance F, and the radius of curvature R' of the spherical mirror can be realized according to equation (2):

[0045] N1 / N3 = F / (F - R') (2)

[0046] In some embodiments, when the focusing distance F of the light-collecting element 140 is designed to be close to the photosensitive element, the distance from the top to the bottom of the sixth insulating layer 130 along the Z-axis can be the second thickness OT. The distance from the top to the bottom of the light-shielding layer 120 along the Z-axis can be the fourth thickness ST. The distance from the bottom of the light-shielding layer 120 to the top of the photosensitive element 112 along the Z-axis can be the third thickness PT. The relationship between the first thickness LT, the second thickness OT, the third thickness PT, and the fourth thickness ST can be realized according to equation (3):

[0047] OT = 2 R'-LT-PT-ST (3)

[0048] In other words, the second thickness OT of the sixth insulating layer 130 can be determined based on the radius of curvature R' of the spherical mirror, the first thickness LT of the light-collecting element 140, the third thickness PT from the bottom of the light-shielding layer 120 to the top of the photosensitive element 112, and the fourth thickness ST of the light-shielding layer 120.

[0049] In other embodiments, when the focusing distance F of the light-collecting element 140 is designed to be close to the light-shielding layer 120, the third thickness PT can be disregarded, and the second thickness OT can be achieved according to equation (4):

[0050] OT = 2R'-LT-ST (4)

[0051] In addition, such as Figure 5 As shown, the radius of curvature R' of the spherical mirror can be obtained (e.g., calculated) based on the chord R and the first thickness LT. In some embodiments, the radius of curvature R' of the spherical mirror can be 9 to 9.5 micrometers (μm), the first thickness LT can be 4 to 4.5 micrometers, the third thickness PT can be 2 to 2.5 micrometers, and the second thickness OT can be 12 micrometers. The above values ​​are only one embodiment of the present invention and are not intended to limit it.

[0052] Figure 6 This is a schematic diagram of the optical sensing device 60 according to Embodiment 1 of the present invention. Compared to Figure 1 The optical sensing device 10 and optical sensing device 60 may not include the light-shielding element 134. Furthermore, compared to... Figure 4 In the optical sensing device 40, a light-shielding layer 120 is conductive, which can replace the fourth conductive layer 109, and is electrically connected to the photosensitive element 112. The light-shielding layer 120 may include a conductive material (e.g., metal, but not limited thereto), and through a fifth conductive layer 113, the light-shielding layer 120 is electrically connected to the photosensitive element 112. That is, the photosensitive element 112 is controlled through the light-shielding layer 120 and / or the fifth conductive layer 113, and stray light (e.g., reflected light or other light not from a light source) is reflected to block stray light from passing through. In this embodiment, the first bottom width WB1 of the first opening 122 may be smaller than the second top width WT2 of the second opening 132. This design absorbs or reflects more stray light from different paths. In different embodiments, the same technical features may be present without departing from the spirit of the invention.

[0053] The following examples can be used in multiple drawings of this invention.

[0054] In some embodiments, optical sensing devices 10, 20, 30, 40, and 60 may include electronic devices having a photosensing element 112. The electronic device may include, but is not limited to, a display device, an antenna device, a sensing device, or a splicing device. The electronic device may be a bendable or flexible electronic device. The electronic device may, for example, include a liquid crystal light-emitting diode (LCD); the LED may include, for example, an organic light-emitting diode (OLED), a miniLED, a microLED, or a quantum dot (QD, such as QLED or QDLED), fluorescent, phosphorescent, or other suitable materials, and the above materials may be arranged and combined in any way, but are not limited to. The antenna device may be, for example, a liquid crystal antenna, but is not limited to. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited to. It should be noted that the electronic device may be any arrangement and combination of the foregoing, but is not limited to.

[0055] In some embodiments, substrate 100 may include a rigid substrate, a flexible substrate, or a combination thereof, but is not limited thereto. For example, substrate 100 may include glass, quartz, sapphire, acrylic resin, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable transparent materials, or combinations thereof, but is not limited thereto.

[0056] In some embodiments, a light source (not shown in the above figures) may be disposed adjacent to the substrate 100, for example, below the substrate 100 or on the side of the substrate. In some embodiments, the light source may include a direct-lit backlight unit (BLU), a side-lit backlight unit, a self-emissive backlight unit, or other suitable backlight units, but is not limited thereto.

[0057] The material of the first semiconductor layer 101 is, for example, low-temperature polysilicon (LTPS), low-temperature polysilicon oxide (LTPO), or amorphous silicon (a-Si), but is not limited thereto. In some embodiments, the thin-film transistor is, for example, a top-gate thin-film transistor, but is not limited thereto. In other embodiments, the circuit element TFT1 may also be a bottom-gate or double-gate thin-film transistor.

[0058] In some embodiments, the first conductive layer 103, the second conductive layer 105, the third conductive layer 107, the fourth conductive layer 109, or the fifth conductive layer 113 may comprise a transparent conductive material, such as a transparent conducting oxide (TCO), indium tin oxide (ITO), or indium doped zinc oxide, but not limited thereto. In some embodiments, the first conductive layer 103, the second conductive layer 105, the third conductive layer 107, the fourth conductive layer 109, or the fifth conductive layer 113 may comprise an opaque conductive material, such as a metal, a metal oxide, other suitable conductive material, or a combination thereof, but not limited thereto. The metal may include aluminum, copper, silver, chromium, titanium, molybdenum, other suitable materials, or a combination thereof, but not limited thereto.

[0059] In some embodiments, a buffer layer may be disposed between the substrate 100 and the first semiconductor layer 101. The material of the buffer layer may include organic materials, inorganic materials, other suitable materials, or combinations thereof, but is not limited thereto. Inorganic materials may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), other suitable materials, or combinations thereof, but are not limited thereto. Organic materials may include epoxy resins, silicone resins, acrylic resins (e.g., polymethyl methacrylate (PMMA), polyimide, perfluoroalkoxy alkane (PFA), other suitable materials, or combinations thereof, but are not limited thereto.

[0060] In some embodiments, the first insulating layer 102 may be a gate insulator (GI), but is not limited thereto. In some embodiments, the second insulating layer 104 may be an interlayer dielectric (ILD), but is not limited thereto. In some embodiments, the third insulating layer 106, the fourth insulating layer 108, the fifth insulating layer 110, or the sixth insulating layer 130 may be planarization layers, but is not limited thereto. The first insulating layer 102, the second insulating layer 104, the third insulating layer 106, the fourth insulating layer 108, the fifth insulating layer 110, or the sixth insulating layer 130 may include the aforementioned organic materials, the aforementioned inorganic materials, and silicon nitride, silicon oxide, silicon oxynitride, other suitable materials, or combinations thereof, but is not limited thereto.

[0061] In some embodiments, the photosensing element 112 may include a photodiode, a photoconductor, or a phototransistor, but is not limited thereto. In this embodiment, the photodiode may include a second semiconductor layer 1120, an intrinsic semiconductor layer 1121, and a third semiconductor layer 1122 disposed along the Z-axis, wherein the intrinsic semiconductor layer 1121 may be disposed (e.g., sandwiched) between the second semiconductor layer 1120 and the third semiconductor layer 1122. In some embodiments, the second semiconductor layer 1120 and the intrinsic semiconductor layer 1121 may include different materials. That is, the photosensing element 112 may include a PIN diode or a NIP diode, but is not limited thereto. In some embodiments, the photoconductor may include a metal-semiconductor-metal (MSM). In some embodiments, the phototransistor may include a semiconductor layer or a conductive layer.

[0062] In some embodiments, the light-collecting element 140 may include a lens, but is not limited thereto.

[0063] In some embodiments, the light-shielding element 134 may include a light-absorbing material. In some embodiments, the light-shielding element 134 may include a reflective material. In some embodiments, the light-absorbing material may include, but is not limited to, black resin, black matrix (BM), black photoresist, carbon black, resin-based materials, other suitable materials, or combinations thereof. In some embodiments, the reflective material may include metals, such as molybdenum, copper, nickel, aluminum, titanium, other suitable materials, or combinations thereof, but is not limited to.

[0064] It should be understood that, in order to facilitate the reader's understanding and for the sake of simplicity in the drawings, only some of the same (i.e., those with the same pattern) elements, films, or openings are indicated in the multiple drawings of this invention. For example, elements with multiple hexagonal patterns are all light-sensing elements 112, films with grids are all light-shielding layers 120, films with diagonal stripes from the upper right to the lower left are all sixth insulating layers 130, elements with diagonal stripes from the upper left to the lower right are all light-shielding elements 134, and elements with dots are all light-collecting elements 140.

[0065] It should be understood that, in the above embodiments, when the element is referred to as being "inside" the film layer or "inside" the opening, it can be directly inside the film layer or the opening, or there can be an inserted element or film layer between the two (indirect cases).

[0066] It should be understood that the features of the above embodiments can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with each other.

[0067] In summary, in the optical sensing device of the present invention, the structure formed by the light-shielding element, the insulating layer, and the light-shielding layer, or the structure formed by the light-shielding element and the insulating layer, can reduce material costs, simplify complex manufacturing processes, or improve the noise ratio. As a result, the complex manufacturing processes of existing optical sensing devices can be improved, and the quality of the optical sensing device can also be enhanced.

[0068] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Those skilled in the art will recognize that the present invention can have various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An optical sensing device, characterized in that, include: One substrate; A photosensitive element is disposed on the substrate; A light-shielding layer is disposed on the light-sensing element, including a first opening overlapping the light-sensing element; An insulating layer is disposed on the light-shielding layer, including a second opening that overlaps the first opening; as well as A light-collecting element is disposed on the insulating layer, and at least a portion of the light-collecting element is located within the second opening; Wherein, a first refractive index of the insulating layer is greater than a second refractive index N1 of the light-collecting element; The second refractive index N1, the focusing distance F of the light-collecting element, the radius of curvature R' of the spherical mirror of the light-collecting element, and the third refractive index N3 of the external medium conform to the following equation: N1 / N3 = F / (F - R').

2. The optical sensing device as claimed in claim 1, characterized in that, In a cross-sectional direction, the first opening has a first bottom width, the second opening has a second bottom width, and the first bottom width is smaller than the second bottom width.

3. The optical sensing device as claimed in claim 1, characterized in that, In a cross-sectional direction, the second opening has a second bottom width and a second top width, wherein the second bottom width is smaller than the second top width.

4. The optical sensing device as claimed in claim 1, characterized in that, The light-shielding layer is electrically connected to the light-sensing element.

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