Semiconductor chamber and semiconductor process apparatus

Abstract

The application discloses a semiconductor chamber and a semiconductor process equipment, and relates to the technical field of semiconductor chambers. The semiconductor chamber comprises a first chamber body, an isolation valve, a temperature control assembly, a first bearing part and a second bearing part. The isolation valve is arranged in the first chamber body, and the isolation valve divides the inner cavity of the first chamber body to form at least two process cavities. The first chamber body is provided with a wafer transmission port, and the wafer transmission port is communicated with one of the at least two process cavities. The temperature control assembly is arranged in each process cavity, and the temperature control effect of the two temperature control assemblies in the adjacent two process cavities is different. The first bearing part and the second bearing part are respectively arranged in the adjacent two process cavities. When the isolation valve between the adjacent two process cavities is opened, the first bearing part can move into the process cavity where the second bearing part is located, and the wafer can be transferred between the first bearing part and the second bearing part. The above scheme can solve the problem of insufficient production capacity of the semiconductor process equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor chip manufacturing technology, and in particular to a semiconductor chamber and semiconductor process equipment. Background Technology

[0002] In related technologies, semiconductor process equipment is equipped with process chambers such as heating chambers, cooling chambers, and CVD (Chemical Vapor Deposition) chambers.

[0003] In semiconductor wafer processing, after processing in the CVD chamber, the wafer needs to be transferred to the heating chamber for heating. After heating, it is transferred to the cooling chamber for cooling, thus performing the annealing process. When there is no wafer being processed in the heating or cooling chamber, the wafer can be transferred there. When a wafer is being processed in the heating or cooling chamber, the wafer from the previous process must wait for the wafer in the next process chamber to complete processing and be transferred out before it can be transferred. Because each process chamber has a single function, and each process chamber can only perform one type of process, the overall wafer processing time is lengthened, severely impacting the throughput of semiconductor processing equipment.

[0004] In related technologies, the number of process chambers that a transmission cavity in a semiconductor process equipment can connect to is already determined. Therefore, if the total number of process chambers remains constant, increasing the number of one or more process chambers will inevitably lead to a decrease in the number of other one or more process chambers. Thus, increasing the number of one or more process chambers cannot solve the problem of insufficient capacity in semiconductor process equipment. Summary of the Invention

[0005] This invention discloses a semiconductor chamber and semiconductor process equipment to solve the problem of insufficient production capacity of semiconductor process equipment.

[0006] To solve the above problems, the present invention adopts the following technical solution:

[0007] A semiconductor chamber, comprising:

[0008] A first chamber body and an isolation valve, wherein the isolation valve is disposed within the first chamber body and the isolation valve divides the inner cavity of the first chamber body to form at least two process chambers; the first chamber body has a wafer transfer port and the wafer transfer port is connected to one of the at least two process chambers.

[0009] Temperature control components are provided in each of the process chambers, and the temperature control effects of the two temperature control components in two adjacent process chambers are different.

[0010] A first carrier portion and a second carrier portion are respectively located in two adjacent process cavities. When the isolation valve between the two adjacent process cavities is opened, the first carrier portion can move to the process cavity where the second carrier portion is located, and the wafer can be transferred between the first carrier portion and the second carrier portion.

[0011] A semiconductor process apparatus includes a first process chamber and a second process chamber, wherein the second process chamber is the aforementioned semiconductor chamber, and there are multiple first process chambers and multiple second process chambers, which are spaced apart. A wafer from each first process chamber can be transferred to an idle second process chamber.

[0012] The technical solution adopted in this invention can achieve the following beneficial effects:

[0013] In the semiconductor chamber disclosed in this invention, the inner cavity of the first chamber body is divided into at least two process chambers by isolation valves. Each process chamber is equipped with a temperature control component. The temperature control effects of the temperature control components in adjacent process chambers are different. That is, a semiconductor chamber can be compatible with at least two process chambers with different temperature control effects, such as heating or cooling respectively. In other words, a semiconductor chamber can be compatible with at least two different processes. Therefore, without changing the total number of process chambers, the semiconductor process equipment increases the number of process chambers that can perform different processes, thereby improving the throughput of the semiconductor process equipment. Attached Figure Description

[0014] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0015] Figure 1 This is a schematic diagram of the structure of semiconductor process equipment;

[0016] Figure 2 This is a schematic diagram of the semiconductor chamber structure disclosed in an embodiment of the present invention;

[0017] Figure 3 This is a top view of the semiconductor chamber disclosed in an embodiment of the present invention;

[0018] Figure 4 This is a schematic diagram of the structure of the telescopic portion of the second support part of the semiconductor chamber disclosed in an embodiment of the present invention when it is contracted;

[0019] Figure 5This is a schematic diagram of the structure of the telescopic portion of the second support part of the semiconductor cavity when it is extended, as disclosed in an embodiment of the present invention.

[0020] Explanation of reference numerals in the attached figures:

[0021] 110 - First chamber body, 111 - Process chamber, 112 - Cavity section, 1121 - Through hole, 1122 - Assembly clearance, 120 - Second chamber body

[0022] 200-Isolation Valve

[0023] 300-Temperature control components,

[0024] 410 - First bearing part, 420 - Second bearing part, 421 - Fixed part, 422 - Telescopic part

[0025] 510 - First extraction line, 511 - First valve, 520 - Second extraction line, 521 - Second valve

[0026] 610 - Process gas piping, 620 - Pipeline valves

[0027] 700-chip. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0029] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] In related technologies, taking CVD technology as an example, semiconductor process equipment includes a CVD chamber, a heating chamber, and a cooling chamber. For example... Figure 1 As shown, chamber 1 is the heating chamber, chamber 2 is the cooling chamber, and chambers 3 to 6 are CVD chambers.

[0031] In the specific process, the wafers processed in chambers 3 to 6 need to be transferred to chamber 1 for heating and then to chamber 2 for cooling, thereby performing an annealing process to improve the wafer's performance.

[0032] For example, when a wafer from chamber 3 is transferred to chamber 1 for processing, wafers from chambers 4 and 6 must wait for chamber 1 to become available before being transferred there sequentially. This lengthens the overall wafer processing time, severely impacting the capacity of semiconductor processing equipment.

[0033] Then, since the number of chambers in a semiconductor process equipment is fixed, the number of CVD chambers decreases when the number of heating and cooling chambers is increased. Therefore, this method of increasing the number of chambers cannot solve the problem of insufficient capacity of semiconductor process equipment.

[0034] like Figures 2-5 As shown, an embodiment of the present invention discloses a semiconductor chamber, which includes a first chamber body 110, an isolation valve 200, a temperature control component 300, a first support part 410, and a second support part 420.

[0035] An isolation valve 200 is disposed within the first chamber body 110, and the isolation valve 200 divides the inner cavity of the first chamber body 110 to form at least two process chambers 111. Specifically, the at least two process chambers 111 are spaced apart along the height direction of the first chamber body 110. The first chamber body 110 has a wafer transfer port, which is connected to one of the at least two process chambers 111.

[0036] Optionally, to further avoid temperature interference between the two process chambers 111, the material of the isolation valve 200 should preferably have poor thermal conductivity, such as a smooth stainless steel valve.

[0037] Each process chamber 111 is equipped with a temperature control component 300, and the temperature control effects of the two temperature control components 300 in two adjacent process chambers 111 are different. This design allows a single semiconductor chamber to be compatible with at least two process chambers 111 with different temperatures.

[0038] Specifically, in two adjacent process chambers 111, the temperature control component 300 in one process chamber 111 can perform the heating function, and the temperature control component 300 in the other process chamber 111 can perform the cooling function. In other words, one of the two adjacent process chambers 111 can be a heating chamber and the other can be a cooling chamber.

[0039] The first carrier portion 410 and the second carrier portion 420 are respectively located in two adjacent process cavities 111. When the isolation valve 200 between the two adjacent process cavities 111 is opened, the first carrier portion 410 can move to the process cavity 111 where the second carrier portion 420 is located, and the wafer 700 can be transferred between the first carrier portion 410 and the second carrier portion 420.

[0040] In the specific process, the temperature control component 300 in one process chamber 111 can be a heater, and the temperature control component 300 in the other process chamber 111 can be a cooler, thereby realizing the functions of cooling and heating. The process chamber 111 where the first carrier part 410 is located can be a heating chamber, and the chamber where the second carrier part 420 is located can be a cooling chamber. At this time, the wafer 700 is transferred to the first carrier part 410. After being heated in the process chamber 111 where the first carrier part 410 is located, the isolation valve 200 is opened, and the first carrier part 410 transfers the wafer 700 to the process chamber 111 where the second carrier part 420 is located, and then transfers it to the second carrier part 420. However, the first carrier part 410 returns to its own process chamber 111, closes the isolation valve 200, and then cools the wafer 700. After cooling is complete, the isolation valve 200 is opened, the second carrier 420 transfers the wafer 700 to the first carrier 410, the first carrier 410 transports the wafer 700 to its process chamber 111, and then the wafer 700 is transferred out of the semiconductor chamber, thereby completing the annealing process of the wafer 700.

[0041] Of course, after the cooling process is completed, the wafer 700 can also be directly transferred out of the semiconductor chamber from the cooling cavity, which is not a limitation in this article.

[0042] In the embodiments disclosed in this application, the semiconductor chambers are compatible with at least two different processes. Therefore, without changing the total number of process chambers, the semiconductor process equipment increases the number of process chambers 111 for different processes, thereby improving the production capacity of the semiconductor process equipment.

[0043] The semiconductor chamber disclosed in this application can replace chambers 1 and 2 in the related technology. Both the replaced chambers 1 and 2 can complete the heating and cooling processes. Therefore, when chamber 1 is performing the process, the wafers 700 in chambers 3 to 6 can be transferred to chamber 2 without waiting for chamber 1 to be idle. Thus, without increasing the total number of process chambers in the semiconductor process equipment, the number of process chambers 111 is increased, which can improve the production capacity of the semiconductor process equipment.

[0044] In addition, the No. 1 and No. 2 chambers in the related technologies still require the use of robotic arms for transfer, while the semiconductor chamber in this application does not require the use of robotic arms for transfer, thus simplifying the structure of the semiconductor process equipment and shortening the scheduling time and transfer time during the transfer process.

[0045] In another optional embodiment, the semiconductor chamber disclosed in this application may further include at least two first evacuation lines 510. Each first evacuation line 510 may be connected to a process chamber 111. The first evacuation line 510 connects the process chamber 111 to a vacuum controller. Each first evacuation line 510 may be equipped with a first valve 511, which controls the connection or disconnection of the vacuum pump with the process chamber 111. In this case, when it is necessary to evacuate the process chamber 111, the first valve 511 can be opened, connecting the first evacuation line 510 to the process chamber 111, thereby evacuating the corresponding process chamber 111 and bringing it to a vacuum state.

[0046] In this scheme, the semiconductor chamber of the wafer 700 is in a vacuum state during the transfer process. Therefore, it can be connected to the vacuum controller through the first evacuation pipe 510 and the first valve 511, which facilitates the vacuuming of the process chamber 111.

[0047] In the above embodiments, each process chamber 111 corresponds to a first vacuum pipe 510, and a first valve 511 is provided on the first vacuum pipe 510. Therefore, opening the first valve 511 corresponding to each process chamber 111 can evacuate the corresponding process chamber 111.

[0048] In the above embodiments, the semiconductor chamber may include a vacuum controller. Of course, the vacuum controller may also be included in the semiconductor process equipment for evacuating the entire semiconductor process equipment.

[0049] In the above embodiments, since the thermal conductivity of the wafer 700 is poor under vacuum, in another optional embodiment, the semiconductor chamber disclosed in this application may further include at least two process gas lines 610. Each process gas line 610 may be connected to a process chamber 111, and the process chamber 111 may be connected to a process gas source via the process gas lines 610. Each process gas line 610 may be equipped with a line valve 620, which controls the connection or disconnection of the process gas source from the process chamber 111.

[0050] In this scheme, when the process chamber 111 is being processed, the corresponding pipeline valve 620 can be opened first to allow air to pass through the process chamber 111, so that the process chamber 111 is in an atmospheric state before the heating or cooling process is carried out, thereby improving the heat conduction or cooling rate of the wafer 700.

[0051] The process gas in the above embodiments can be nitrogen, argon, or other process gases, and this article does not impose any restrictions.

[0052] In the above embodiments, the temperatures of two adjacent process chambers 111 are easily affected by each other. Therefore, in another optional embodiment, the first chamber body 110 may include at least two cavity portions 112. Each cavity portion 112 may have a through hole 1121. The through holes 1121 of two adjacent cavity portions 112 are arranged opposite to each other, and there may be an assembly gap 1122 between the two adjacent cavity portions 112. That is, there is a certain distance between the two adjacent cavity portions 112, and they do not directly contact each other. The isolation valve 200 may be located within the assembly gap 1122 and between the two opposite through holes 1121. In this case, the isolation valve 200 is disposed within the assembly gap 1122, and the two through holes 1121 are connected or isolated through the isolation valve 200.

[0053] In this design, there is a certain distance between two adjacent cavity sections 112, and they do not directly contact each other. Therefore, the temperature of one cavity section 112 is not easily transferred to the other cavity section 112, which makes it less likely for the temperatures of two adjacent process cavities 111 to affect each other, thereby improving the reliability and safety of the semiconductor cavity.

[0054] Furthermore, the semiconductor chamber disclosed in this application may further include a second chamber body 120 and a second evacuation conduit 520. The first chamber body 110 may be located within the second chamber body 120, and the first chamber body 110 and the second chamber body 120 are spaced apart. The inner cavity of the second chamber body 120 may be connected to the second evacuation conduit 520. The second evacuation conduit 520 is used to connect the inner cavity of the second chamber body 120 to a vacuum controller. The second evacuation conduit 520 may be provided with a second valve 521, which can control the connection or disconnection between the vacuum controller and the inner cavity of the second chamber body 120.

[0055] In this design, the second chamber body 120 surrounds the first chamber body 110 within its inner cavity. Preferably, multiple support members (not shown in the figure) are disposed between the bottom walls of the two chambers. These support members provide support for the first chamber body 110. Preferably, the contact area between the support members and both the first and second chamber bodies 110 is minimized, and they are made of non-thermally conductive materials to reduce temperature conduction between the two chambers. The design of the second chamber body 120 prevents damage to the first chamber body 110, improving the safety of the semiconductor chamber. Furthermore, by adjusting the vacuum level within the second chamber body 120, temperature interference between the two process chambers 111 can be further avoided.

[0056] Specifically, the inner cavity of the second chamber body 120 can be evacuated through the second evacuation pipe 520, thereby making the inner cavity of the second chamber body 120 a vacuum state. This reduces the heat transfer performance between two adjacent chamber parts 112, and further reduces the temperature influence between two adjacent process chambers 111.

[0057] In another optional embodiment, the second support portion 420 may include a plurality of sub-support portions, which may be uniformly arranged circumferentially on the inner wall of the corresponding process cavity 111 to form a support surface for supporting the wafer 700. In this solution, the second support portion 420 can uniformly support the wafer 700 circumferentially, thereby making the wafer 700 subject to uniform force and less prone to tilting, thus improving the stability of the wafer 700 support.

[0058] In the above embodiments, during the transfer of the wafer 700 by the first carrier portion 410 and the second carrier portion 420, the second carrier portion 420 is prone to interference with the wafer 700, which causes the wafer 700 to fall off during the transfer process.

[0059] Furthermore, in another optional embodiment, each sub-carrier may include a fixing part 421 and a telescopic part 422, wherein the fixing part 421 is detachably connected to the inner wall of the corresponding process cavity 111, and the telescopic part 422 can telescopically move along the fixing part 421. In this scheme, the telescopic part 422 can extend or shorten. When the first carrier part 410 transfers the wafer 700 to the second carrier part 420, the telescopic part 422 shortens, the first carrier part 410 transports the wafer 700 to a position higher than the second carrier part 420, and then the telescopic part 422 extends, with a portion of the telescopic part 422 extending below the wafer 700. During the descent of the first carrier part 410, the wafer 700 is transferred onto the telescopic part 422, thereby completing the transfer of the wafer 700. When the chip 700 in the second carrier 420 is transferred to the first carrier 410, the first carrier 410 lifts the chip 700 during its ascent, and the telescopic part 422 shortens. During the descent of the first carrier 410, the telescopic part 422 will not interfere with the chip 700 due to the shortening of the telescopic part 422.

[0060] In this design, the telescopic part 422 is telescopic, which makes it less likely to interfere with the chip 700 and the first carrier part 410, thereby improving the reliability and security of the chip 700 transmission.

[0061] Optionally, the telescopic part 422 can be a hydraulic cylinder or a pneumatic cylinder. Of course, the telescopic part 422 can also be other structures, which are not limited in this article.

[0062] In the above embodiments, the fixing part 421 is detachably connected to the inner wall of the process cavity 111, which facilitates the replacement of the sub-support part and improves the maintainability of the semiconductor cavity. The fixing part 421 and the inner wall of the process cavity 111 can be connected by threads, snap-fit, or other processes, and other methods can also be used, which are not limited herein.

[0063] Optionally, the first carrier portion 410 may include a plurality of ejector pins, which are spaced apart and together lift the wafer 700.

[0064] In the above embodiments, during the process of transferring the wafer 700 from the first carrier 410 to the adjacent process cavity 111, the first carrier 410 is prone to colliding with the isolation valve 200 during transportation. Therefore, in another optional embodiment, the semiconductor cavity disclosed in this application may further include a detection element and a control element, which are controllably connected. The detection element may be disposed within the process cavity 111 where the first carrier 410 is located. The detection element is used to detect the distance between the first carrier 410 and the isolation valve 200. Specifically, the detection element detects the distance between the first carrier 410 and the isolation valve 200 within its corresponding process cavity 111; that is, the distance between the first carrier 410 and the isolation valve 200 when it is not being transported or when it is being transported back to its corresponding process cavity 111.

[0065] When the distance between the first bearing part 410 and the isolation valve 200 is greater than or equal to the preset safety switch distance, the control element controls the isolation valve 200 to open or close.

[0066] In the specific process engineering, when the first carrier 410 is transferring the wafer 700 to the adjacent process cavity 111, if the first carrier 410 moves to a distance less than the preset safety switch distance, the isolation valve 200 has already opened, thereby avoiding collision between the first carrier 410 or the wafer 700 and the isolation valve 200.

[0067] When the first carrier 410 returns to its process cavity 111, the isolation valve 200 can only close when the first carrier 410 moves to a distance greater than or equal to the preset safety switch distance, so as to avoid the first carrier 410 or the wafer 700 from colliding with the isolation valve 200.

[0068] This solution can improve the safety performance of the semiconductor chamber and prevent the first carrier 410 or the wafer 700 from colliding with the isolation valve 200.

[0069] Optionally, the preset safety switch distance can be the distance between the bearing surface of the first bearing part 410 and the bottom surface of the isolation valve 200. This distance can be 5mm, or other values, which are not limited in this article.

[0070] In another alternative embodiment, the position of the first support portion 410 at the highest point within the adjacent process cavity 111 can be more than 2 mm below the top of the process cavity 111, thereby preventing the first support portion 410 from colliding with the top of the process cavity 111.

[0071] In another alternative embodiment, the isolation valve 200 can be a pneumatically controlled valve. The semiconductor chamber disclosed in this application may also include a venting line, which can be connected to the isolation valve 200. The venting line can be opened or closed to control the opening or closing of the isolation valve 200. In this solution, the opening or closing of the isolation valve 200 is controlled by opening or closing the venting line, thereby simplifying the opening or closing process of the isolation valve 200.

[0072] In the above embodiment, when the semiconductor chamber is powered off, the ventilation in the ventilation pipeline stops, which causes the isolation valve 200 to close accidentally, which may cause the isolation valve 200 to collide with the first support part 410.

[0073] Based on this, in another optional embodiment, the gas pipeline may include a first vent pipeline and a second vent pipeline, both of which may be connected to the isolation valve 200.

[0074] When the first venting line is open and the second venting line is closed, the isolation valve 200 opens.

[0075] When the first venting line is open or closed, and the second venting line is open, the isolation valve 200 is closed.

[0076] In this design, the opening and closing of the valve is controlled by two vent lines. The isolation valve 200 is open only when the first vent line is vented and the second vent line is de-vented. The isolation valve 200 is closed only when the first vent line is de-vented and the second vent line is vented. Therefore, the state of the isolation valve 200 remains unchanged whether both the first and second vent lines are de-vented or vented. This avoids accidental opening or closing of the isolation valve 200 due to misoperation and prevents the isolation valve 200 from colliding with the first support portion 410, thereby damaging the isolation valve 200 or the first support portion 410 and improving the safety of the semiconductor chamber.

[0077] In another optional embodiment, during the process of the first carrier 410 transferring the wafer 700 to the adjacent process cavity 111, when the distance between the first carrier 410 and the isolation valve 200 is greater than or equal to the preset safety switch distance, the first ventilation line is ventilated and the second ventilation line is de-ventilated, so that the isolation valve 200 is opened and remains open after the isolation valve 200 is opened.

[0078] When the first carrier 410 returns to its process chamber 111, if the first carrier 410 moves to a distance greater than or equal to the preset safety switch distance, the first ventilator is shut off and the second ventilator is ventilated, so that the isolation valve 200 is closed and remains closed after the isolation valve 200 is closed.

[0079] Based on the semiconductor chamber of any of the above embodiments of the present invention, the present invention also discloses a semiconductor process apparatus, wherein the disclosed semiconductor manufacturing apparatus has the semiconductor chamber of any of the above embodiments.

[0080] The semiconductor process equipment includes a first process chamber and a second process chamber, wherein the second process chamber can be a semiconductor chamber of any of the above embodiments. There are multiple first process chambers and multiple second process chambers, which are spaced apart. A wafer 700 from each first process chamber can be transferred to an idle second process chamber.

[0081] Specifically, the first process chamber is used for annealing the wafer 700, and the second process chamber can be a CVD chamber, etching chamber, or other process chambers. The first and second process chambers in the semiconductor process equipment disclosed in this application can also be, for example... Figure 1 In the layout shown, chambers 1 and 2 can be replaced with the semiconductor chambers disclosed in this application, and chambers 3 to 6 are multiple second process chambers. For example, a wafer processed in chamber 3 can be placed in chamber 1, a wafer 700 processed in chamber 4 can be transferred to chamber 2, and wafers 700 in chambers 5 and 6 can be transferred after chambers 1 and 2 become available.

[0082] In the embodiments disclosed in this application, the semiconductor chambers are compatible with at least two different processes. Therefore, without changing the total number of process chambers, the semiconductor process equipment increases the number of process chambers, thereby improving the throughput of the semiconductor process equipment.

[0083] It should be noted that the layout of the semiconductor process equipment in the related technology and the layout of the chambers disclosed in this application may be the same, but the structures of chamber 1 and chamber 2 are different.

[0084] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0085] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A semiconductor chamber, characterized in that, include: The first chamber body (110) and the isolation valve (200) are disposed inside the first chamber body (110). The isolation valve (200) separates the inner cavity of the first chamber body (110) to form at least two process cavities (111). The first chamber body (110) has a wafer transfer port, which is connected to one of the at least two process cavities (111). Temperature control component (300), each of the process chambers (111) is provided with temperature control component (300), and the temperature control effect of two temperature control components (300) in two adjacent process chambers (111) is different; A first support portion (410) and a second support portion (420) are respectively located in two adjacent process cavities (111). When the isolation valve (200) between the two adjacent process cavities (111) is open, the first support portion (410) can move to the process cavity (111) where the second support portion (420) is located, and the wafer (700) can be transferred between the first support portion (410) and the second support portion (420). When the isolation valve (200) is closed, the process cavity (111) where the first support portion (410) is located and the process cavity (111) where the second support portion (420) is located are isolated. One of the two adjacent process cavities (111) is a heating cavity and the other is a cooling cavity. The first chamber body (110) includes at least two cavity portions (112), each cavity portion (112) having a through hole (1121). The through holes (1121) of two adjacent cavity portions (112) are arranged opposite to each other, and there is an assembly gap (1122) between two adjacent cavity portions (112). The isolation valve (200) is located in the assembly gap (1122) and between the two opposite through holes (1121). After processing, the wafer (700) is first transferred to the process cavity (111) where the first carrier (410) is located for temperature control, and then the isolation valve (200) is opened. The first carrier (410) then transfers the wafer (700) to the process cavity (111) where the second carrier (420) is located for temperature control.

2. The semiconductor chamber according to claim 1, characterized in that, The semiconductor chamber further includes at least two first evacuation lines (510), each of which is connected to a process chamber (111). The first evacuation line (510) is used to connect the process chamber (111) to a vacuum controller. The first evacuation line (510) is provided with a first valve (511), which controls the connection or disconnection between the vacuum controller and the process chamber (111).

3. The semiconductor chamber according to claim 2, characterized in that, The semiconductor chamber further includes at least two process gas lines (610), which are connected to one of the process chambers (111). The process chamber (111) is connected to a process gas source through the process gas lines (610). The process gas lines (610) are equipped with line valves (620), which control the connection or disconnection between the process gas source and the process chamber (111).

4. The semiconductor chamber according to claim 1, characterized in that, The semiconductor chamber further includes a second chamber body (120) and a second suction pipe (520). The first chamber body (110) is located inside the second chamber body (120) and the two are spaced apart. The inner cavity of the second chamber body (120) is connected to the second suction pipe (520). The second suction pipe (520) is used to connect the inner cavity of the second chamber body (120) to a vacuum controller. The second suction pipe (520) is provided with a second valve (521). The second valve (521) controls the vacuum controller to connect or disconnect from the inner cavity of the second chamber body (120).

5. The semiconductor chamber according to claim 1, characterized in that, The second carrier portion (420) includes a plurality of sub-carrier portions, which are uniformly arranged circumferentially on the inner wall of the corresponding process cavity (111) to form a carrier surface for carrying the wafer (700); each sub-carrier portion includes a fixing portion (421) and a telescopic portion (422), wherein the fixing portion (421) is detachably connected to the inner wall of the corresponding process cavity (111), and the telescopic portion (422) can telescopically move along the fixing portion (421).

6. The semiconductor chamber according to claim 1, characterized in that, The semiconductor chamber further includes a detection element and a control element. The detection element is connected to the control element. The detection element is located in the process chamber (111) where the first support part (410) is located. The detection element is used to detect the distance between the first support part (410) and the isolation valve (200). When the distance between the first bearing part (410) and the isolation valve (200) is greater than or equal to the preset safety switch distance, the control element controls the isolation valve (200) to open or close.

7. The semiconductor chamber according to claim 1, characterized in that, The isolation valve (200) is a pneumatically controlled valve. The semiconductor chamber includes a venting pipe, which is connected to the isolation valve (200). The venting pipe can be vented or de-vented to control the opening or closing of the isolation valve.

8. The semiconductor chamber according to claim 7, characterized in that, The ventilation pipeline includes a first ventilation pipeline and a second ventilation pipeline, both of which are connected to the isolation valve (200). When the first ventilator is ventilated and the second ventilator is de-ventilated, the isolation valve (200) opens; When the first venting line is cut off and the second venting line is vented, the isolation valve (200) is closed.

9. A semiconductor process apparatus, characterized in that, It includes a first process chamber and a second process chamber, the second process chamber being a semiconductor chamber as described in any one of claims 1 to 8, and there are multiple first process chambers and multiple second process chambers, the multiple first process chambers and the multiple second process chambers are distributed at intervals, and the wafer (700) of each first process chamber can be transferred to an idle second process chamber.

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