Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided, the apparatus including: a processing container having a processing space; a support unit that supports and rotates a substrate in the processing space; a liquid supply unit that supplies a processing liquid to the substrate supported by the support unit; and a heating unit that heats the substrate. The support unit includes: a driver that rotates a spin chuck; a chuck pin that is mounted on the spin chuck to rotate therewith; and a chuck pin moving unit that moves the chuck pin between a contact position at which the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate. The chuck pin moving unit includes: a first driving module that is coupled to the chuck pin and rotates therewith, the first driving module including a first magnetic body; and a second driving module that faces the first driving module and does not rotate with the spin chuck, the second driving module including a second magnetic body that faces the first magnetic body and a driving member that drives the second magnetic body in a vertical direction.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0136377, filed with the Korean Intellectual Property Office on October 14, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] To manufacture semiconductor devices or liquid crystal displays, various processes such as photolithography, ashing, ion implantation, thin film deposition, and cleaning are performed on the substrate. Among these processes, etching or cleaning is used to remove unwanted areas of the thin film formed on the substrate, or to etch or clean foreign matter, particles, etc. High selectivity, high etching rate, and etching uniformity are required for thin films. Furthermore, because semiconductor devices are highly integrated, even higher levels of etching selectivity and etching uniformity are required.

[0005] Generally, in the etching or cleaning process of a substrate, a processing fluid treatment operation, a rinsing operation, and a drying operation are performed sequentially. In one example, in the processing fluid treatment operation, a processing fluid for etching a thin film formed on the substrate or removing foreign matter from the substrate is supplied to the substrate to form a puddle, and then the puddle of processing fluid is heated to promote etching through the processing fluid, and in the rinsing operation, a rinsing fluid (such as pure water) is supplied to the substrate.

[0006] The aforementioned processing fluid treatment operation is performed by placing the substrate on a support unit and supplying processing fluid to the substrate while rotating the support unit. The support unit is equipped with chuck pins that support the sides of the substrate to prevent it from moving laterally during rotation. The chuck pins move between a ready position (providing space for the substrate to be placed when it is loaded or unloaded onto the support unit) and a supported position (contacting the sides of the substrate during process execution when the substrate placed on the support unit is rotated). Accordingly, the space between the chuck pins in the ready position is greater than the space between the chuck pins in the supported position.

[0007] Generally, when a liquid pool forms on the substrate, the processing fluid flows downwards along the chuck pins due to the contact between the substrate and the chuck pins. Furthermore, the downward flow of the processing fluid along the chuck pins makes it difficult to maintain a sufficient liquid film. Summary of the Invention

[0008] This invention aims to provide a substrate processing apparatus and a substrate processing method that can effectively process substrates.

[0009] The present invention also aims to provide a support unit and a substrate processing apparatus and method using the support unit, wherein the chuck pin moves freely during the process by rotating the substrate.

[0010] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following description.

[0011] An exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a processing container having a processing space; a support unit for supporting and rotating the substrate in the processing space; a liquid supply unit for supplying processing liquid to the substrate supported by the support unit; and a heating unit for heating the substrate, wherein the support unit includes: a spinchuck; a driver for rotating the spinchuck; a chuck pin mounted on the spinchuck such that the chuck pin rotates together with the spinchuck; and a chuck pin movement unit. The chuck pin moving unit is used to move the chuck pin between a contact position and an open position. In the contact position, the chuck pin contacts the side of the substrate, and in the open position, the chuck pin is spaced apart from the side of the substrate. The chuck pin moving unit includes: a first drive module connected to the chuck pin and rotating together with the spin chuck; and a second drive module facing the first drive module and not rotating together with the spin chuck. The first drive module includes a first magnetic body, and the second drive module includes a second magnetic body facing the first magnetic body, and a drive member for driving the second magnetic body in a vertical direction.

[0012] The first drive module can move the position of the chuck pin according to the position change of the second magnet.

[0013] Repulsive force can act between the first magnetic body and the second magnetic body.

[0014] The first drive module may further include an arm member that connects the first magnet and the chuck pin, and the arm member can guide the movement of the chuck pin when the first magnet moves.

[0015] The chuck pin may include multiple chuck pins, the second magnet may be configured in a ring shape, and the first drive module may be configured to correspond in number to the multiple chuck pins.

[0016] The arm component may include: a first arm, which is coupled to the chuck pin and extends in a direction perpendicular to the longitudinal direction of the chuck pin; a second arm, which is coupled to the first arm; and a third arm, which connects the second arm and the first magnet, wherein an elastic member may be coupled to one end of the second arm and the elastic member may provide a restoring force, causing the chuck pin to move from the open position to the contact position.

[0017] The chuck pin moving unit can move the chuck pin while the chuck pin is rotating.

[0018] The driver can rotate the chuck pin, causing the substrate to rotate at a first speed, and the chuck pin moving unit can move the chuck pin, so that the chuck pin is positioned in the open position when the substrate rotates at the first speed.

[0019] The driver can rotate the chuck pin so that the substrate rotates at a second speed faster than the first speed, and the chuck pin moving unit can move the chuck pin so that the chuck pin is positioned at the contact position when the substrate rotates at the second speed.

[0020] The chuck pin may have a through hole extending vertically, and the heating unit may pass through the through hole to heat the bottom surface of the substrate.

[0021] The heating unit may include a laser.

[0022] The spin chuck may include: a body portion; and an extension portion that extends upward from the upper end of the body portion, and the area of ​​the extension portion may gradually increase towards the top.

[0023] Another exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising: a first liquid supply operation, wherein the first liquid supply operation is in an open state supplying a first liquid to a substrate rotating at a first speed and forming a first liquid film on the substrate, wherein in the open state a chuck pin configured to support a side portion of the substrate is spaced apart from the side portion of the substrate; a liquid film heating operation following the first liquid supply operation, wherein the liquid film heating operation is heating the first liquid film formed on the substrate in the open state; and a second liquid supply operation following the liquid film heating operation, wherein the second liquid supply operation is in a contact state supplying a second liquid to the substrate rotating at a second speed, wherein in the contact state the chuck pin contacts the side portion of the substrate to support the side portion of the substrate.

[0024] The first liquid and the second liquid can be the same.

[0025] The first liquid can be an aqueous solution of phosphoric acid.

[0026] When the substrate is rotated, a change from the open state to the contact state can be performed.

[0027] The second speed can be faster than the first speed.

[0028] In the second liquid supply operation, the amount of the second liquid supplied per unit time can be greater than the amount of the first liquid supplied per unit time in the first liquid supply operation.

[0029] In this liquid film heating operation, the substrate can rotate at the first speed, and the first liquid may not be supplied to the substrate.

[0030] Another exemplary embodiment of the present invention provides a method for processing a substrate using a substrate processing apparatus, the method comprising: a first liquid supply operation, wherein the first liquid supply operation is in an open state supplying a first liquid to a substrate rotating at a first speed to form a first liquid film on the substrate, wherein in the open state the chuck pin is positioned at an open position; a liquid film heating operation following the first liquid supply operation, wherein the liquid film heating operation heats the first liquid film formed on the substrate in the open state of the chuck pin; and a second liquid supply operation following the liquid film heating operation, wherein the second liquid supply operation is in a contact state supplying a second liquid to the substrate rotating at a second speed faster than the first speed, wherein in the contact state the chuck pin is positioned at a contact position; wherein, while the substrate is rotating, the chuck pin changes from the open state to the contact state.

[0031] According to an exemplary embodiment of the present invention, the substrate can be processed effectively.

[0032] Furthermore, according to an exemplary embodiment of the present invention, when the process is performed by rotating a substrate, the chuck pin can be moved freely.

[0033] Furthermore, according to an exemplary embodiment of the present invention, the processing fluid can be prevented from flowing downwards to the chuck pins.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the processing fluid agglomerates formed on the substrate can be maintained as a certain amount or more of liquid film.

[0035] Furthermore, according to an exemplary embodiment of the present invention, the chuck pin can be continuously moved regardless of whether the support unit of the support substrate rotates.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the travel of the chuck pin can be adjusted during the process.

[0037] Furthermore, according to an exemplary embodiment of the present invention, various types of heat sources and cooling systems for various heat sources can be applied through a support unit in which a hollow space is formed.

[0038] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0039] Figure 1 This is a top plan view illustrating a substrate processing facility according to an exemplary embodiment of the present invention.

[0040] Figure 2 To demonstrate the settings Figure 1 A cross-sectional view of the substrate processing apparatus in the process chamber.

[0041] Figure 3 A cross-sectional view is provided to illustrate a chuck pin and a chuck pin moving unit according to an exemplary embodiment of the present invention.

[0042] Figure 4 To demonstrate Figure 3 A three-dimensional view of the second magnetic body of the chuck pin moving unit.

[0043] Figure 5 This is a top plan view illustrating the state of chuck pin movement during the rotation of a spin chuck according to an exemplary embodiment of the present invention.

[0044] Figure 6 To demonstrate Figure 5 The chuck pin is moved to the open position in the process operation view.

[0045] Figure 7 To demonstrate Figure 5 The process operation view shows the chuck pin being moved to the contact position.

[0046] Figure 8 To illustrate Figure 4 A diagram illustrating the relationship between a rotating first magnetic body and a non-rotating second magnetic body.

[0047] Figure 9 This is a flowchart of a substrate processing method according to an exemplary embodiment of the present invention.

[0048] Figures 10 to 13 To show in sequence Figure 9 A diagram illustrating the substrate processing method. Detailed Implementation

[0049] Hereinafter, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the invention may be implemented differently and is not limited to the following exemplary embodiments. Furthermore, in describing the exemplary embodiments of the invention in detail, detailed descriptions of relevant known functions or configurations will be omitted if such detailed descriptions would unnecessarily obscure the essential points of the invention. Additionally, throughout the drawings, the same reference numerals are used for parts having similar functions and effects.

[0050] Furthermore, unless explicitly stated otherwise, the word "comprising," and variations such as "including" or "containing," will be understood to imply the inclusion of the stated element but not exclude any other element. It should be understood that the terms "comprising" and "having" are intended to specify the presence of the features, quantities, operations, constituent elements and components, or combinations thereof described in this specification, and do not exclude the possibility of the prior presence or addition of one or more other features, quantities, operations, constituent elements and components, or combinations thereof.

[0051] The singular expressions used herein include plural expressions unless they have a clearly contradictory meaning in the context. Accordingly, for clarity of description, the shape and size of elements in the accompanying figures may be exaggerated.

[0052] The expression "and / or" includes each of the items mentioned and all combinations including one or more of these items. Furthermore, in this specification, "connection" refers not only to a direct connection between component A and component B, but also to an indirect connection between component A and component B via component C inserted between component A and component B.

[0053] The exemplary embodiments of the present invention can be modified in many ways, and the scope of the invention should not be construed as limited to the following exemplary embodiments. These exemplary embodiments are provided to provide a more complete explanation of the invention to those skilled in the art. Therefore, the shapes of the elements in the drawings are exaggerated for clearer description.

[0054] In this exemplary embodiment, a process of etching a substrate using a processing fluid is described as an example. However, this exemplary embodiment is not limited to etching processes, but can be applied differently to substrate processing processes using liquids, such as cleaning processes, ashing processes, and developing processes.

[0055] Here, substrate is a broad concept encompassing all substrates used in the manufacture of semiconductor devices, flat panel displays (FPDs), and other articles in which circuit patterns are formed on thin films. Examples of substrate W include silicon wafers, glass substrates, and organic substrates.

[0056] In the following text, reference will be made to Figures 1 to 13 Examples of the invention are described in detail below.

[0057] Figure 1 This is a top plan view illustrating a substrate processing facility 1 according to an exemplary embodiment of the present invention. (Refer to...) Figure 1 The substrate processing facility 1 includes an indexing module 10 and a processing module 20. The indexing module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the processing module 20 can be arranged in series sequentially.

[0058] In the following text, the orientation in which the loading port 120, the transmission frame 140, and the process module 20 are arranged is referred to as the first orientation 12, the orientation perpendicular to the first orientation 12 when viewed from above is referred to as the second orientation 14, and the orientation perpendicular to the plane including the first orientation 12 and the second orientation 14 is referred to as the third orientation 16.

[0059] A carrier 18 for accommodating substrates W is located on loading ports 120. Multiple loading ports 120 are provided, and these ports are arranged in series along the second direction 14. The number of loading ports 120 can be increased or decreased depending on the process efficiency and floor space requirements of the process module 20. Multiple slots (not shown) can be formed in the carrier 18 to accommodate multiple substrates W arranged horizontally relative to the ground. A front-opening unified pod (FOUP) can be used as the carrier 18.

[0060] The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260.

[0061] The transfer chamber 240 is configured such that its longitudinal direction is parallel to the first direction 12. Multiple process chambers 260 can be arranged on one or both sides of the transfer chamber 240. On one and the other side of the transfer chamber 240, the multiple process chambers 260 can be arranged symmetrically about the transfer chamber 240. Some of the multiple process chambers 260 are arranged along the longitudinal direction of the transfer chamber 240. Furthermore, some of the process chambers 260 are arranged to stack on top of each other. That is, the multiple process chambers 260 can be arranged in an A×B configuration on one side of the transfer chamber 240. Here, "A" represents the number of process chambers 260 arranged in a line along the first direction 12, and "B" represents the number of process chambers 260 arranged in a line along the third direction 16. When four or six process chambers 260 are arranged on one side of the transfer chamber 240, the process chambers 260 can be arranged in a 2×2 or 3×2 configuration. The number of process chambers 260 can be increased or decreased. Unlike the above, process chambers 260 can be provided only on one side of the transfer chamber 240. In addition, process chambers 260 can be provided as a single layer on one or both sides of the transfer chamber 240.

[0062] A buffer unit 220 is disposed between the transmission frame 140 and the transmission chamber 240. The buffer unit 220 provides space for the substrate W to remain before it is transmitted between the transmission chamber 240 and the transmission frame 140. A slot (not shown) is disposed inside the buffer unit 220, in which the substrate W is placed. A plurality of slots (not shown) are arranged to be spaced apart from each other along a third direction 16. The buffer unit 220 has an open side facing the transmission frame 140. The buffer unit 220 has an open side facing the transmission chamber 240.

[0063] The transfer frame 140 transfers the substrate W between the carrier 18 located at the loading port 120 and the buffer unit 220. An index track 142 and an indexing robot 144 are provided in the transfer frame 140. The longitudinal direction of the index track 142 is set parallel to a second direction 14. The indexing robot 144 is mounted on the index track 142 and moves linearly along the index track 142 in the second direction 14. The indexing robot 144 includes a base 144a, a body 144b, and an indexing arm 144c. The base 144a is mounted so as to be movable along the index track 142. The body 144b is coupled to the base 144a. The body 144b is set to be movable on the base 144a along a third third direction 16. Furthermore, the body 144b is set to be rotatable on the base 144a. Index arms 144c are coupled to body 144b and are configured to be movable forward and backward relative to body 144b. Multiple index arms 144c are configured to be driven individually. The index arms 144c are stacked in a state of being spaced apart from each other on a third direction 16. When substrate W is transferred from process module 20 to carrier 18, a portion of the index arms 144c can be used, and when substrate W is transferred from carrier 18 to process module 20, another portion of the multiple index arms 144c can be used. This prevents particles generated from substrate W before process loading and unloading by indexing robot 144 from adhering to substrate W after process loading.

[0064] The transfer chamber 240 transfers substrate W between the buffer unit 220 and the process chamber 260, and between the process chambers 260. A guide rail 242 and a main robot 244 are disposed in the transfer chamber 240. The guide rail 242 is configured such that its longitudinal direction is parallel to a first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly along the guide rail 242 along the first direction 12. The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is mounted so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is configured to be movable on the base 244a along a third direction 16. Furthermore, the body 244b is configured to be rotatable on the base 244a. The main arm 244c is connected to the body 244b and is configured to be movable forward and backward relative to the body 244b. Multiple main arms 244c are configured to be driven individually. The main arms 244 are configured to be stacked in a state of being spaced apart from each other in a third direction 16.

[0065] A substrate processing apparatus 300 for performing liquid processing on a substrate W is disposed in a process chamber 260. The substrate processing apparatus 300 may have different structures depending on the type of liquid processing to be performed. Conversely, the substrate processing apparatus 300 within each process chamber 260 may have the same structure. Optionally, the multiple process chambers 260 may be divided into multiple groups, and the substrate processing apparatus 300 within the same group of process chambers 260 may have the same structure, while the substrate processing apparatus 300 within different groups of process chambers 260 may have different structures.

[0066] Figure 2 To demonstrate the settings Figure 1 A cross-sectional view of the substrate processing apparatus in the process chamber. Figure 3 A cross-sectional view illustrating the chuck pin and chuck pin moving unit according to an exemplary embodiment of the present invention is provided. Figure 4 To demonstrate Figure 3 A three-dimensional view of the second magnetic body of the chuck pin moving unit. Figure 5 A top plan view illustrating the state of chuck pin movement during rotation of a spin chuck according to an exemplary embodiment of the present invention. Figure 6 To demonstrate Figure 5 The chuck pin is moved to the open position in the process operation view. Figure 7 To demonstrate Figure 5 The operational view of the process in which the chuck pin is moved to the contact position, and Figure 8 To illustrate Figure 4 A diagram illustrating the relationship between a rotating first magnetic body and a non-rotating second magnetic body.

[0067] Reference Figure 2 The substrate processing apparatus 300 includes a processing vessel 320, a substrate support unit 340, a lifting unit 360, a liquid supply unit 390, and a heating unit 500.

[0068] The substrate processing apparatus 300 may include a chamber 310. The chamber 310 provides a sealed internal space. A processing container 320 is disposed within the internal space of the chamber 310. A fan filter unit 315 is mounted at the upper part of the chamber 310. The fan filter unit 315 generates a vertical airflow within the chamber 310. The fan filter unit 315 also generates a downward airflow within the chamber 310. The fan filter unit 315 is a device that modularizes a filter and an air supply fan into a single unit, filtering high-humidity outdoor air and supplying the filtered air to the interior of the chamber 310. The high-humidity outdoor air passes through the fan filter unit 315 and is supplied to the chamber 310, forming a vertical airflow within the internal space of the chamber 310. This vertical airflow provides a uniform airflow in the upper part of the substrate W. Contaminants (e.g., fumes) generated during the process of processing the substrate W are discharged to the outside of the processing container 320 along with the air included in the vertical airflow, thereby maintaining a high level of cleanliness inside the processing container 320.

[0069] Processing container 320 has a cylindrical shape with an open top. Processing container 320 includes a first recycling container 321 and a second recycling container 322. Recycling containers 321 and 322 recycle different processing fluids used in the process. The first recycling container 321 is configured in an annular shape surrounding the substrate support unit 340. The second recycling container 322 is configured in an annular shape surrounding the substrate support unit 340. In one exemplary embodiment, the first recycling container 321 is configured in an annular shape surrounding the second recycling container 322. The second recycling container 322 may be configured to be inserted into the first recycling container 321. The height of the second recycling container 322 may be greater than the height of the first recycling container 321. The second recycling container 322 may include a first guide portion 326 and a second guide portion 324. The first guide portion 326 may be located at the top of the second recycling container 322. The first guide portion 326 is formed to extend toward the substrate support unit 340 and is formed to slope upward toward the substrate support unit 340. In the second recovery container 322, a second guide portion 324 may be provided at a position that is downwardly spaced from the first guide portion 326. The second guide portion 324 is formed to extend toward the substrate support unit 340, and the second guide portion 324 may be formed to be inclined upward toward the substrate support unit 340. The space between the first guide portion 326 and the second guide portion 324 serves as a first inlet 324a through which the processing fluid flows. A second inlet 322a is provided at the lower part of the second guide portion 324. The first inlet 324a and the second inlet 322a may be positioned at different heights. An orifice (not shown) is formed in the second guide portion 324, such that the processing fluid flowing into the first inlet 324a flows into the second recovery line 322b provided at the lower part of the second recovery container 322. The orifice (not shown) of the second guide portion 324 may be formed at the lowest position in the second guide portion 324. The processing fluid recovered into the first recovery container 321 is configured to flow into a first recovery line 321b, which is connected to the bottom surface of the first recovery container 321. The processing fluid introduced into the recovery containers 321 and 322 can be provided to an external processing fluid circulation system (not shown) via the recovery lines 321b and 322b, respectively, for reuse.

[0070] The lifting unit 360 linearly moves the processing container 320 up and down. As an example, the lifting unit 360 is connected to the second recovery container 322 of the processing container 320 and moves the second recovery container 322 up and down, thereby changing the relative height of the processing container 320 with respect to the substrate support unit 340. The lifting unit 360 includes a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixedly mounted on the outer wall of the processing container 320, and the moving shaft 364, which moves vertically by the driver 366, is fixedly connected to the bracket 362. Lowering the second recovery container 322 of the processing container 320 causes the upper part of the substrate support unit 340 to protrude towards the upper part of the processing container 320; specifically, when the substrate W is loaded into or unloaded from the substrate support unit 340, the upper part of the substrate support unit protrudes above the first guide portion 326. Furthermore, during the process, the height of the processing container 320 is adjusted so that the processing fluid is introduced into predetermined recovery containers 321 and 322 according to the type of processing fluid supplied to the substrate W. Optionally, the lifting unit 360 may also move the substrate support unit 340 vertically instead of the processing container 320. Optionally, the lifting unit 360 may move the entire processing container 320 so that the processing container is vertically movable. The lifting unit 360 is configured to adjust the relative height of the processing container 320 and the substrate support unit 340, and if the lifting unit is a configuration capable of adjusting the relative height of the processing container 320 and the substrate support unit 340, then, depending on the design, exemplary embodiments of the processing container 320 and the lifting unit 360 can be provided in various structures and methods.

[0071] The liquid supply unit 390 is configured to discharge a chemical liquid from the top of the substrate W onto the substrate W, and the liquid supply unit may include one or more chemical liquid discharge nozzles. The liquid supply unit 390 may pump the chemical liquid stored in a storage tank (not shown) to discharge the chemical liquid onto the substrate W through the chemical liquid discharge nozzles. The liquid supply unit 390 may include a drive unit (not shown) that is movable between a process position facing the central region of the substrate W and a standby position on the outer side of the substrate W.

[0072] The chemical liquid supplied from the liquid supply unit 390 to the substrate W can vary depending on the substrate processing process. When the substrate processing process is a silicon nitride film etching process, the chemical liquid may include phosphoric acid (H3PO4). The liquid supply unit 390 may also include a deionized water (DIW) supply nozzle for rinsing the substrate surface after the etching process; an isopropyl alcohol (IPA) discharge nozzle; and a nitrogen (N2) discharge nozzle for performing a drying process after rinsing. Although not shown, the liquid supply unit 390 may include a nozzle moving member (not shown) capable of supporting and moving the chemical liquid discharge nozzle. The nozzle moving member (not shown) may include a support shaft (not shown), an arm (not shown), and a driver (not shown). The support shaft (not shown) is positioned on one side of the processing container 320. The support shaft (not shown) has a rod shape facing a third direction in the longitudinal direction. The support shaft (not shown) is configured to be rotatable by the driver (not shown). An arm (not shown) is attached to the upper end of a support shaft (not shown). The arm (not shown) extends vertically from the support shaft (not shown). A chemical liquid discharge nozzle is fixedly attached to the distal end of the arm (not shown). Depending on the rotation of the support shaft (not shown), the chemical liquid discharge nozzle can swing together with the arm (not shown). The chemical liquid discharge nozzle can swing to a process position and a standby position. Optionally, the support shaft (not shown) can be configured to move vertically. Furthermore, the arm (not shown) can be configured to move forward and backward in its longitudinal direction.

[0073] The substrate support unit 340 supports the substrate W and rotates the substrate W during the process. The substrate support unit 340 includes a spin chuck 342, a window member 348, a drive member 349, a chuck pin 346, and a chuck pin moving unit 400.

[0074] The chuck pin 346 is connected to the spin chuck 342. The substrate W is spaced apart from the upper surface of the spin chuck 342 by the chuck pin 346 connected to the spin chuck 342. With the substrate supported by the chuck pin 346 connected to the spin chuck 342, the substrate W rotates together with the spin chuck 342.

[0075] The spin chuck 342 is configured in the shape of a can with an open top and an open bottom. The spin chuck 342 includes a through-hole 342a extending through both the upper and lower surfaces. The spin chuck 342 also includes a through-hole 342a extending vertically. In this case, the vertical direction can refer to the axial direction of the spin chuck 342 or a direction parallel to the axis of rotation of the spin chuck 342. The heating unit 500, which will be described later, is disposed in the through-hole 342a.

[0076] The spin chuck 342 includes a body portion 3421 and an extension portion 3422 extending upward from the body portion 3421. The body portion 3421 and the extension portion 3422 are integrally formed. A through hole 342a is formed to pass through both the body portion 3421 and the extension portion 3422. The body portion 3421 is formed to have the same area. The body portion 3421 is formed to have the same inner diameter. The through hole 342a in the body portion 3421 is formed to have the same diameter. The extension portion 3422 is formed to gradually increase in area from the body portion 3421 in the upward direction. The inner diameter of the extension portion 3422 is formed to increase in the upward direction. The through hole 342a in the extension portion 3422 is formed to increase in diameter in the upward direction. A heating unit 500, which will be described later, is disposed inside the body 3421, and a laser beam generated from the heating unit 500 is emitted to the substrate W through the extension portion 3422. The extension portion 3422 can be sized to not interfere with the laser beam. In this way, the laser beam generated by the heating unit 500 can be emitted onto the substrate W without interference from the spin chuck 342. The spin chuck 342 can be positioned below the window member 348, which will be described later. The spin chuck 342 supports the edge region of the window member 348. The connection between the spin chuck 342 and the window member 348 can have a sealing structure so that the chemical liquid supplied to the substrate W does not permeate into the heating unit 500.

[0077] A window member 348 is positioned below the substrate W. The window member 348 is disposed below the substrate W, which is supported on a chuck pin 346. The window member 348 can be configured to substantially correspond in shape to the substrate W. For example, when the substrate W is a circular wafer, the window member 348 can be configured to be substantially circular. The window member 348 has a larger diameter than the substrate. However, the invention is not limited thereto, and the diameter of the window member 348 can be the same as the diameter of the substrate W, or it can be formed to have a smaller diameter than the substrate W. A hole 3481 is formed in the window member 348, and the chuck pin 346 is disposed in this hole. The chuck pin 346 can pass through the hole 3481 of the window member 348. The diameter of the hole 3481 of the window member 348 can be larger than the diameter of the chuck pin 346. In this way, the chuck pin 346 can move within the hole 3481 of the window member 348. At this time, the chuck pin 346 moves in a direction perpendicular to the rotation axis of the spin chuck 342.

[0078] The window member 348 can be made of a material with high light transmittance. Accordingly, the laser beam emitted from the beam emitting unit can pass through the window member 348. The window member 348 can be made of a material with excellent corrosion resistance to avoid reaction with chemical liquids. For this purpose, the material of the window member 348 can be, for example, quartz, glass, or sapphire. The window member 348 is a structure that allows the laser beam to pass through and reach the substrate W, and protects the substrate support member 340 from the effects of chemical liquids, and the window member can be configured in various sizes and shapes according to the design.

[0079] Support pins 347 can be connected to window member 348. Multiple support pins 347 can be provided. Support pins 347 can be located in the edge region of window member 348. Multiple support pins 347 can be spaced apart from each other along the edge region of window member 348. Support pins 347 can be configured to project upwards from the upper surface of window member 348. Support pins 347 can support the lower surface of substrate W to separate substrate W from window member 348.

[0080] A drive member 349 is coupled to a spin chuck 342. The drive member 349 causes the spin chuck 342 to rotate. Any drive member 349 can be used as long as it can rotate the spin chuck 342. For example, the drive member 349 can be housed in a hollow motor. According to an exemplary embodiment, the drive member 349 may include a stator (not shown) and a rotor (not shown). The stator may be fixed in one position, while the rotor may be coupled to the spin chuck 342. The rotor may be coupled to the bottom of the spin chuck 342 to rotate the spin chuck 342. When using a hollow motor as the drive member 349, the narrower the bottom of the spin chuck 342, the smaller the hollow core of the motor can be selected, thereby reducing manufacturing costs. According to an exemplary embodiment, a cover member (not shown) may be further included to protect the drive member 349 from chemical liquids.

[0081] A chuck pin 346 is mounted on a spin chuck 342. The chuck pin 346 is mounted on an extension 3422 of the spin chuck 342. The chuck pin 346 rotates with the spin chuck 342. A plurality of chuck pins 346 are provided. The plurality of chuck pins 346 are spaced apart from each other. The plurality of chuck pins 346 are arranged in a circular shape when combined. The plurality of chuck pins 346 are disposed along the edge of a through-hole 342a formed in the extension 3422. The chuck pin 346 supports the side of the substrate W. The chuck pin 346 clamps the substrate W. The chuck pin 346 separates the substrate W from the window member 348 by a predetermined distance. At least a portion of the chuck pin 346 is received in a hole 3481 in the window member 348. The chuck pin 346 is movably disposed within the hole 3481 of the window member 348. The chuck pin 346 is connected to a chuck pin moving unit 400, which will be described later. The chuck pin 346 is configured to be movable via the chuck pin moving unit 400. The chuck pin 346 can be configured to be movable between a contact position, in which the chuck pin 346 contacts the side of the substrate W, and in the open position, the chuck pin 346 is spaced apart from the side of the substrate W.

[0082] Reference Figure 3 A chuck pin moving unit 400 is connected to one end of a chuck pin 346 to move the chuck pin 346. The chuck pin moving unit 400 moves the chuck pin 346 in a direction perpendicular to the rotation axis of the spin chuck 342. The chuck pin moving unit 400 moves the chuck pin 346 between a contact position where the chuck pin 346 contacts the side of the substrate W and an open position where the chuck pin 346 is spaced apart from the side of the substrate W. The chuck pin moving unit 400 moves the chuck pin 346 while the spin chuck 342 is rotating. The chuck pin moving unit 400 moves the chuck pin 346 while the substrate W is rotating.

[0083] The chuck pin moving unit 400 includes a first drive module 420 and a second drive module 440. The first drive module 420 and the second drive module 440 are combined to move the chuck pin 346.

[0084] The first drive module 420 is connected to the chuck pin 346. The first drive module 420 is housed in the spin chuck 432. The first drive module 420 is housed in an extension 3422 of the spin chuck 342. A receiving space for accommodating the first drive module 420 is formed inside the extension 3422. The receiving space inside the extension 3422 can be configured as a recess. The first drive module 420 rotates together with the spin chuck 432.

[0085] The first drive module 420 includes a first magnetic body 422 and an arm member 424. The first magnetic body 422 is configured as a permanent magnet. The first magnetic body 422 faces the second magnetic body 442 of the second drive module 440, which will be described later. The first magnetic body 422 and the second magnetic body 442 are spaced apart. The first magnetic body 422 overlaps with at least a portion of the second magnetic body 442 along the rotation axis of the spin chuck 342. The first magnetic body 422 and the second magnetic body 442 are configured such that the same polarity is opposite to each other. The polarity of the lower part of the first magnetic body 422 has the same polarity as the polarity of the upper part of the first magnetic body 422. For example, when the N polarity is provided at the lower part of the first magnetic body 422, the N polarity is provided at the upper part of the second magnetic body 442, and when the S polarity is provided at the lower part of the first magnetic body 422, the S polarity is provided at the upper part of the second magnetic body 442. A repulsive force acts between the first magnetic body 422 and the second magnetic body 442. The first magnetic body 422 moves in the direction of the rotation axis of the spin chuck 342 by the repulsive force with the second magnetic body 442.

[0086] Arm member 424 connects chuck pin 346 and first magnetic body 422. One end of arm member 424 is connected to chuck pin 346, and the other end of arm member 424 is connected to first magnetic body 422. When first magnetic body 422 moves by repulsion with second magnetic body 442, arm member 424 guides the movement of chuck pin 346.

[0087] The arm component 424 may include a first arm 4242, a second arm 4244, and a third arm 4246. The first arm 4242 is connected to the chuck pin 346. One end of the first arm 4242 is connected to the chuck pin 345, and the other end is connected to the second arm 4244. The first arm 4242 extends in a direction perpendicular to the longitudinal direction of the chuck pin 346. The first arm 4242 is disposed inside the chuck pin 346.

[0088] The second arm 4244 connects the first arm 4242 and the third arm 4246. One end of the second arm 4244 is connected to the first arm 4242, and the other end is connected to the third arm 4246. One end of the second arm 4244 is also connected to the other end of the first arm 4242. The second arm 4244 may have a curved shape. The second arm 4244 has: a first portion whose longitudinal direction corresponds to the longitudinal direction of the chuck pin 346 and is connected to the first arm 4242; a second portion extending from the first portion and extending in a direction perpendicular to the longitudinal direction of the chuck pin 346; and a curved portion connecting the first portion and the second portion. A hinged connection portion that is hinged to the third arm 4246 may be provided on the second portion of the second arm 4244.

[0089] The third arm 4246 connects the second arm 4244 and the first magnetic body 422. One end of the third arm 4246 is hinged to the second arm 4244, and the other end of the third arm 4246 is hinged to the first magnetic body 422. One end of the third arm 4246 is hinged to a hinged connection portion provided on the second part of the second arm 4244.

[0090] The second arm 4244 may be provided with an elastic member 426. The elastic member 426 is elastically connected to a second portion of the second arm 4244. The elastic member 426 is disposed between the end of the second arm 4244 and the inner wall of the spin chuck 342. The elastic member 426 provides a restoring force, causing the chuck pin 346 to move from the open position to the contact position.

[0091] The second drive module 440 is spaced apart from the first drive module 420. The second drive module 440 does not contact the first drive module 420. The second drive module 440 faces the first drive module 420. A partition wall is positioned between the second drive module 440 and the first drive module 420. The partition wall can be the bottom wall of the spin chuck 342. The partition wall can also be the bottom wall accommodating the extension 3422 of the first drive module 420. The downward movement of the first magnetic body 422 of the first drive module 420 is restricted by the partition wall. The upward movement of the second magnetic body 442 of the second drive module 440 is restricted by the partition wall. The second drive module 440 is located outside the spin chuck 342. The second drive module 440 does not rotate with the spin chuck 342.

[0092] The second drive module 440 includes a second magnetic body 442 and a driver 444. The second magnetic body 442 faces the first magnetic body 422. The second magnetic body 442 is spaced apart from the first magnetic body 422 by a predetermined distance. The second magnetic body 442 is configured as a permanent magnet. The second magnetic body 442 is configured to have a polarity opposite to that of the first magnetic body 422. For example, when the N polarity is located at the upper part of the second magnetic body 442, the N polarity is located at the lower part of the first magnetic body 422, and when the S polarity is located at the upper part of the second magnetic body 442, the S polarity is located at the lower part of the first magnetic body 422. A repulsive force acts between the second magnetic body 442 and the first magnetic body 422. (Refer to...) Figure 4 The second magnetic body 442 is configured in a ring shape.

[0093] The actuator 444 moves the second magnetic body 442. The actuator 444 moves the second magnetic body 442 along the rotation axis of the spin chuck 342. The actuator 444 moves the second magnetic body 442 vertically along the rotation axis of the spin chuck 342. The actuator 444 can be any of a cylinder, stepper motor, servo motor, and electromagnetic coil. However, the invention is not limited to these, and any driving device capable of moving the second magnetic body 442 vertically can be applied.

[0094] Multiple first drive modules 420 can be configured. The number of first drive modules 420 can be set to be the same as the number of chuck pins 346. A second drive module 440 can be configured.

[0095] The first drive module 420 moves the position of the chuck pin 346 according to the position change of the second magnet 442. The process of moving the chuck pin 346 by the first drive module 420 and the second drive module 440 will be described below.

[0096] Reference Figure 5 and Figure 6The chuck pin 346 can move from a contact position where it contacts the side of the substrate W to an open position where it is spaced apart from the side of the substrate W. The actuator 444 moves the second magnetic body 442 upwards. As the second magnetic body 442 moves upwards, the distance between the first magnetic body 422 and the second magnetic body 442 (hereinafter referred to as the first gap d1) narrows. When the first gap d1 between the first magnetic body 422 and the second magnetic body 442 narrows to a predetermined gap (hereinafter referred to as the second gap d2), a repulsive force is generated between the first magnetic body 422 and the second magnetic body 442. The first gap d1 is the distance between the first magnetic body 422 and the second magnetic body 442 facing each other where no repulsive force is generated, and the second gap d2 is the distance between the first magnetic body 422 and the second magnetic body 442 where the repulsive force acts. The second gap d2 can be greater than the first gap d1. When the repulsive force acts between the first magnetic body 422 and the second magnetic body 442, the first magnetic body 422 moves upwards due to the repulsive force. When the first magnetic body 422 moves upward, the other end of the third arm 4246, which is hinged to the first magnetic body 422, moves upward, and one end of the third arm 4246, which is connected to the second arm 4244, moves in a direction away from the central axis of the spin chuck 342 (outward). At this time, the elastic member 426 is compressed in the direction away from the central axis of the spin chuck 342. When the third arm 4246 moves in the outward direction, the second arm 4244 also moves in the outward direction, and the first arm 4242, which is connected to the second arm 4244, also moves in the outward direction to move the chuck pin 346 to the open position.

[0097] Reference Figure 5 and Figure 7The chuck pin 346 can move from an open position spaced apart from the side of the substrate W to a contact position where the chuck pin 346 contacts the side of the substrate W. The actuator 444 moves the second magnetic body 442 downward. When the second magnetic body 442 moves downward, the first magnetic body 422 and the second magnetic body 442 are spaced apart from each other by a first distance d1 or a greater distance. In this case, the repulsive force between the first magnetic body 422 and the second magnetic body 442 does not work. When the repulsive force between the first magnetic body 422 and the second magnetic body 442 disappears, the first magnetic body 422 no longer moves upward, and the second arm 4244 moves in the direction toward the central axis of the spin chuck 342 (inward) by the restoring force of the elastic member 426, and the first arm 4242 connected to the second arm 4244 also moves inward, so that the chuck pin 346 moves to the contact position to clamp the side of the substrate W. Furthermore, when the second arm 4244 moves inward due to the restoring force of the elastic member 426, one end of the third arm 4246, which is hinged to the second arm 4244, moves inward, and the other end of the third arm 4246, which is hinged to the second magnetic body 442, moves downward. The downward movement of the first magnetic body 422 is restricted by the partition wall located between the first magnetic body 422 and the second magnetic body 424.

[0098] Return to reference Figure 2 The substrate processing apparatus 300 includes a heating unit 500. The heating unit 500 is configured to emit a laser beam onto a substrate W. The heating unit 500 can be positioned at a surface lower than the window member 348 in the substrate support unit 340. The heating unit 500 can emit a laser beam toward the substrate W positioned on the substrate support unit 340. The laser beam emitted from the heating unit 500 can pass through the window member 348 of the substrate support unit 340 to be emitted onto the substrate W. Accordingly, the substrate W can be heated to a set temperature. The heating unit 500 may include a laser beam generating member (not shown), a laser beam emitting member 500, and a laser beam transmitting member. The laser beam generating member (not shown) may be disposed outside the chamber 310. The laser beam emitting member 500 may include, for example, a lens. The laser beam emitting member 500 may include multiple lenses. The laser beam emitting member 500 may be disposed inside a spin chuck 342. The laser beam emitting member may be configured as a line connecting the laser beam generating member (not shown) and the laser beam emitting member 500. The laser beam transmission member can transmit a laser beam generated from the laser beam generating member (not shown) to the laser beam emitting member 500. The laser beam emitting member 500, which receives the laser beam through the laser beam transmission member, can then transmit the laser beam onto the substrate W. In the foregoing, the heating unit 500 has been described as a structure for emitting a laser beam, but the invention is not limited thereto; rather, the heating unit 500 can be configured as various heat sources capable of heating the substrate W. For example, the heating unit 500 can be configured as an LED or a halogen heater.

[0099] In the following text, reference will be made to Figures 9 to 13 A substrate processing method according to an exemplary embodiment of the present invention is described. Figure 9 A flowchart of a substrate processing method according to an exemplary embodiment of the present invention, and Figures 10 to 13 To show in sequence Figure 9 A diagram illustrating the substrate processing method. Figure 10 This illustration shows the alignment operation of a substrate before the start of a process according to a substrate processing method, based on an exemplary embodiment of the present invention.

[0100] Reference Figure 10 Before the process begins, the substrate W is transferred to the substrate support unit 340. After the substrate W is transferred to the upper part of the spin chuck 342, the center of the substrate W is aligned with the center of the spin chuck 342 or the window member 348. In this case, the chuck pin 346 is positioned in the open position. When the center of the substrate W is aligned with the center of the spin chuck 342 or the window member 348, the chuck pin 346 is moved to the contact position to support the side of the substrate W. In this case, the chuck pin 346 moves via the chuck pin moving unit 400.

[0101] Figure 11 A process for forming processing liquid clusters on a substrate according to an exemplary embodiment of the present invention is illustrated. (Refer to...) Figure 11 The spin chuck 342 rotates the substrate W at a first speed while the substrate W is supported by the chuck pin 346 of the substrate support unit 340. The liquid supply unit 390 supplies a first liquid to the substrate W rotating at the first speed to form a first liquid film C1 on the upper surface of the substrate W. The first liquid film C1 may be a liquid mass with a predetermined thickness. When the first liquid is supplied to the substrate W, the chuck pin 346 is positioned in the open position. That is, the first liquid film C1 is formed by supplying the first liquid to the substrate W rotating at the first speed while the chuck pin 346 is positioned in the open position, spaced apart from the side of the substrate W. When the first liquid film is formed, when the chuck pin 346 is positioned in the contact position that contacts the side of the substrate W, there is a problem that the first liquid flows downward along the chuck pin 346 and it is difficult to maintain a certain amount of liquid film. However, in the substrate processing method according to an exemplary embodiment of the present invention, when the first liquid film C1 is formed, it is formed with the chuck pin 346 positioned in an open position (in which the chuck pin 346 is spaced apart from the side of the substrate W), thereby preventing the downward flow of the first liquid and maintaining a certain amount of liquid film. Furthermore, since the chuck pin 346 is spaced apart from the side of the substrate W, it has the advantage that the first liquid film (liquid agglomerate) can be easily formed by the surface tension of the first liquid film C1.

[0102] Figure 12 This illustration shows the operation of heating a first liquid film according to an exemplary embodiment of the present invention, based on a substrate processing method. (Refer to...) Figure 12 When a first liquid film of predetermined thickness is formed, the rotation of the substrate W is stopped, and the supply of the first liquid from the liquid supply unit 390 is also stopped. Therefore, the surface of the substrate W is covered by the first liquid film C1 (a formation of liquid droplets in the processing fluid). Here, the processing fluid can be an aqueous solution of phosphoric acid. The substrate W and the first liquid film C1 are heated to a temperature suitable for processing the substrate W. The substrate W and the first liquid film C1 can be heated by the heating unit 500. At this time, the chuck pin 346 is positioned in the open position. The heating unit 500 can be any of a laser, LED, or halogen heater. The substrate W is processed (e.g., etching (wet etching process)) by maintaining the state where the surface of the substrate W is covered by the heated first liquid film C1 of the processing fluid for a predetermined time period. At this time, the spin chuck 342 rotates the substrate W at a first speed. The first liquid on the substrate W can be stirred by rotating the substrate W approximately half a turn in both the forward and reverse rotation directions. This promotes etching and improves the in-plane uniformity of the etching amount.

[0103] Figure 13 This illustration demonstrates a second liquid supply operation according to an exemplary embodiment of the present invention. (Refer to...) Figure 13 After heating the first liquid film C1, a second liquid is supplied to the substrate W to form a second liquid film C2. In this case, the spin chuck 342 rotates the substrate W at a second speed. Furthermore, the chuck pin moving unit 400 moves the chuck pin 346 to a contact position where the chuck pin 346 contacts the side of the substrate W. The second liquid can be the same as the first liquid. The second liquid can be an aqueous solution of phosphoric acid. The thickness of the second liquid film C2 can be less than the thickness of the first liquid film C1. The second speed can be faster than the first speed. For example, the rotation at the first speed can be a low-speed rotation, and the rotation at the second speed can be a high-speed rotation. For example, the first speed can be equal to or less than 20 RPM.

[0104] according to Figures 10 to 13 The substrate processing can be repeated multiple times. When according to Figures 10 to 13 At the end of the substrate processing, a rinsing process (rinsing process) is performed, in which rinsing solution is supplied to substrate W to remove byproducts generated from the reaction with the processing solution from the surface of substrate W. The rinsing solution can be pure water (DIW).

[0105] According to an exemplary embodiment of the substrate processing method of the present invention, in the first liquid supply operation and the liquid film heating operation, the chuck pin 346 is moved such that the chuck pin 346 is positioned in the open position, and in the second liquid supply operation, the chuck pin 346 is moved such that the chuck pin 346 is positioned in the contact position. At this time, according to a general spin chuck structure that moves the chuck pin between the open and contact positions using a rotary cylinder rotatable by 90 degrees, the chuck pin is only movable when the spin chuck is stopped. Therefore, since the spin chuck must be stopped and the chuck pin moved every time the substrate processing method is performed, the process takes a long time and the process efficiency is reduced. Furthermore, when the spin chuck is stopped and the chuck pin moved every time the spin chuck is stopped for each process operation, a liquid film with a uniform thickness may not be obtained, or the liquid film may become over-hardened, leading to liquid film rupture. Furthermore, as mentioned above, when processing a substrate in each operation of a substrate processing method in a spin chuck structure in the related art, while the chuck pin is in contact with the side of the substrate without stopping the spin chuck, the problem is that the liquid film flows along the surface of the chuck pin, thus making it impossible to form a certain amount of liquid film. Moreover, since the contact area between the chuck pin and the side of the substrate reduces the surface tension of the liquid film, it is difficult to form a liquid film of a certain thickness.

[0106] However, according to an exemplary embodiment of the present invention, even during the rotation of the spin chuck 342, the chuck pin 346 can be moved by a chuck system that utilizes the repulsive force between the rotating first magnetic body 422 and the non-rotating second magnetic body 442 spaced apart from each other, thereby solving the above-mentioned problem.

[0107] Simultaneously, the substrate processing apparatus and substrate processing method according to the above exemplary embodiments can be controlled and executed by a controller (not shown). The configuration, storage, and management of the controller can be implemented in the form of hardware, software, or a combination of hardware and software. The file data and / or software configuring the controller can be stored in volatile or non-volatile storage devices, such as read-only memory (ROM); or memory, such as random access memory (RAM), memory chips, devices, or integrated circuits, or storage media, such as compact disks (CDs), digital versatile discs (DVDs), magnetic disks, or magnetic tapes, which are optically or magnetically recordable and simultaneously machine-readable (e.g., computers).

[0108] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing is intended to describe exemplary or various exemplary embodiments for implementing the technical spirit of the present invention, and the invention can be used in various other combinations, variations, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed in this specification, the scope equivalent to this disclosure, and / or the scope of technology or knowledge in the art. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Moreover, the appended claims should be interpreted to also include other exemplary embodiments. These modified exemplary embodiments should not be understood separately from the technical spirit or prospects of the invention.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A processing container having a processing space; A support unit, the support unit being used to support and rotate the substrate in the processing space; A liquid supply unit for supplying processing fluid to the substrate supported by the support unit; as well as A heating unit, wherein the heating unit is used to heat the substrate. The support unit includes: Spin chuck; A driver for rotating the spin chuck; A chuck pin, said chuck pin being mounted on the spin chuck such that said chuck pin rotates together with the spin chuck; and A chuck pin moving unit is configured to move the chuck pin between a contact position and an open position, wherein in the contact position the chuck pin is in contact with a side portion of the substrate, and in the open position the chuck pin is spaced apart from the side portion of the substrate. The chuck pin moving unit includes: A first drive module, the first drive module being connected to the chuck pin and rotating together with the spin chuck; and A second drive module faces the first drive module and does not rotate with the spin chuck, wherein a partition wall is positioned between the second drive module and the first drive module, and the partition wall is the bottom wall of the spin chuck; The first driving module includes: The first magnetic body, and An arm member connects the first magnetic body and the chuck pin, and guides the movement of the chuck pin when the first magnetic body moves. The arm component includes: A first arm is connected to the chuck pin and extends in a direction perpendicular to the longitudinal direction of the chuck pin. A second arm, which is connected to the first arm; and The third arm connects the second arm and the first magnetic body. The elastic member is connected to one end of the second arm, and The elastic member provides a restoring force, causing the chuck pin to move from the open position to the contact position, and The second driving module includes a second magnetic body facing the first magnetic body, and a driving member for driving the second magnetic body in the vertical direction.

2. The apparatus according to claim 1, wherein, The first drive module moves the position of the chuck pin according to the position change of the second magnet.

3. The apparatus according to claim 1, wherein, A repulsive force acts between the first magnetic body and the second magnetic body.

4. The apparatus according to claim 1, wherein, The chuck pins include multiple chuck pins. The second magnetic body is configured in a ring shape, and The first drive module is configured to correspond in number to the plurality of chuck pins.

5. The apparatus according to claim 1, wherein, The chuck pin moving unit moves the chuck pin as the chuck pin rotates.

6. The apparatus according to claim 5, wherein, The driver rotates the chuck pin, causing the substrate to rotate at a first speed, and The chuck pin moving unit moves the chuck pin so that the chuck pin is positioned at the open position when the substrate rotates at the first speed.

7. The apparatus according to claim 6, wherein, The driver rotates the chuck pin, causing the substrate to rotate at a second speed faster than the first speed, and The chuck pin moving unit moves the chuck pin so that the chuck pin is positioned at the contact position when the substrate rotates at the second speed.

8. The apparatus according to claim 1, wherein, The chuck pin has a through hole extending vertically, and The heating unit heats the bottom surface of the substrate through the through hole.

9. The apparatus according to claim 8, wherein, The heating unit includes a laser.

10. The apparatus according to claim 8, wherein, The spin chuck includes: The main body; and The extension portion extends upward from the upper end of the body portion, and The area of ​​the extended portion gradually increases towards the top.

11. A method for processing a substrate using the apparatus for processing a substrate according to claim 1, the method comprising: A first liquid supply operation is performed in which a first liquid is supplied to the substrate rotating at a first speed in the open state to form a first liquid film on the substrate, wherein the chuck pin is positioned in the open position in the open state. The liquid film heating operation following the first liquid supply operation is to heat the first liquid film formed on the substrate in the open state of the chuck pin. as well as Following the liquid film heating operation, a second liquid supply operation is performed whereby a second liquid is supplied to the substrate rotating at a second speed faster than the first speed while in contact. In this contact state, the chuck pin is positioned at the contact location. Specifically, when the substrate is rotated, the chuck pin changes from the open state to the contact state.

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