A transient substrate manufacturing method and a display device manufacturing method

Abstract

The present application relates to a kind of transient substrate manufacturing method and display device manufacturing method.Transient substrate manufacturing method includes: providing a substrate;Form support layer on the substrate;The support layer is divided into regions, and first region and second region are formed with interval arrangement, wherein, in the process of dividing into regions, according to the fixed force size required by the light emitting diode chip to be transferred, the distance between adjacent two first regions and / or adjacent two second regions is adjusted;The first region is etched to form a plurality of support modules with interval arrangement on the second region.The distance between adjacent two first regions and / or adjacent two second regions can be adjusted according to the fixed force size required by the light emitting diode chip to be transferred, the size of bonding surface is adjusted, and the fixed force between the electrode of light emitting diode chip and transient substrate is controlled by adjusting the size of bonding surface.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for manufacturing a transient substrate and a method for manufacturing a display device. Background Technology

[0002] Micro-LED (Micro Light Emitting Diode) is an emerging display technology. Compared to conventional display technologies, displays based on Micro-LED technology have advantages such as fast response speed, self-illumination, high contrast, long lifespan, and high photoelectric efficiency. In the manufacturing process of Micro-LED, LED chips need to be transferred and bonded from a growth substrate to a transient substrate. Then, a transfer substrate is used to transfer the LED chips from the transient substrate to a backplane. The adhesion between the transient substrate and the LED chip affects the transfer yield of the LED chip. Furthermore, the fixing force on the transient substrate is related to the properties of the adhesive used, making it difficult to control the adhesion between the LED chip and the transient substrate. Summary of the Invention

[0003] In view of the shortcomings of the prior art, the purpose of this application is to provide a method for manufacturing a transient substrate and a method for manufacturing a display device, which aims to solve the technical problem of the difficulty in controlling the magnitude of the fixing force of the transient substrate.

[0004] This invention provides a method for manufacturing a transient substrate, comprising:

[0005] Provide a substrate;

[0006] A support layer is formed on the substrate;

[0007] The support layer is divided into regions to form a first region and a second region that are spaced apart. During the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred.

[0008] The first region is etched to form a plurality of spaced-apart support modules on the second region. The size of the bonding surface, which includes the contact surface when the support modules are bonded to the electrodes of the LED chip, is adjusted by adjusting the distance between two adjacent first regions and / or two adjacent second regions, thereby adjusting the fixing force between the electrodes of the LED chip and the transient substrate.

[0009] Optionally, the steps following the formation of multiple support modules with intervals include:

[0010] An adhesive layer is formed on the substrate, and the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

[0011] Optionally, the step of forming a support layer on the substrate includes:

[0012] A sacrificial layer and a metal layer are sequentially formed on the substrate.

[0013] Optionally, the step of etching the first region to form a plurality of spaced-apart support modules on the second region includes:

[0014] A photoresist layer is formed on the metal layer, and the photoresist layer corresponding to the first region is developed to form a plurality of photoresist units spaced apart on the second region.

[0015] Using the photoresist unit as a mask, the metal layer and the sacrificial layer on the first region are etched to form a plurality of spaced-apart support modules.

[0016] Optionally, the photoresist layer is a positive photoresist layer, and the first region is exposed and developed to control the size and / or spacing of the formed photoresist units.

[0017] Optionally, the photoresist layer is a negative photoresist layer, which exposes the second region and develops the first region to control the size and / or spacing of the formed photoresist units.

[0018] Optionally, a plurality of the support modules are disposed at equal intervals on the substrate.

[0019] Based on the same inventive concept, the present invention provides a method for manufacturing a display device, comprising:

[0020] A growth substrate is provided, on which a plurality of light-emitting diode chips to be transferred are disposed;

[0021] A transient substrate is provided, and a support layer is formed on the substrate of the transient substrate. The support layer is divided into regions to form a first region and a second region that are spaced apart. During the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred. The first region is etched to form a plurality of support modules that are spaced apart on the second region.

[0022] The growth substrate and the transient substrate are aligned, and the electrodes of the light-emitting diode chip are bonded to the support module;

[0023] The light-emitting diode chip is peeled off from the growth substrate. The size of the bonding surface is adjusted by adjusting the distance between two adjacent first regions and / or two adjacent second regions. The bonding surface includes the contact surface when the support module and the electrode of the light-emitting diode chip are bonded. The fixing force between the electrode of the light-emitting diode chip and the transient substrate is adjusted by adjusting the size of the bonding surface.

[0024] Optionally, the step of bonding the electrodes of the light-emitting diode chip to the support module includes:

[0025] The adhesive layer is formed on the substrate, and the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

[0026] Optionally, the electrodes of the light-emitting diode chip are bonded to the support module and the adhesive layer, respectively.

[0027] Optionally, the method for manufacturing the display device further includes: providing a transfer substrate and bonding the transfer substrate to the light-emitting diode chip;

[0028] The light-emitting diode chip and the support module are aligned with the back plate via the transfer substrate;

[0029] The corresponding pads on the backplate are bonded to the electrodes of the light-emitting diode chip and the support module, respectively.

[0030] Optionally, the support module includes a metal unit and a sacrificial unit, the metal unit being connected to the sacrificial unit, and the metal unit being disposed away from the substrate, while the sacrificial unit is disposed close to the substrate, thereby decomposing the sacrificial unit;

[0031] The electrodes of the light-emitting diode chip and the corresponding metal units are aligned with the backplate by moving the transfer substrate.

[0032] Optionally, a transfer substrate is provided, and the step of bonding the transfer substrate to the light-emitting diode chip includes the following steps beforehand:

[0033] Remove the adhesive layer, which is disposed on the substrate, and the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

[0034] This invention provides a method for manufacturing a transient substrate and a method for manufacturing a display device.

[0035] The distance between two adjacent first regions and / or two adjacent second regions can be adjusted according to the required fixing force of the light-emitting diode chip to be transferred, thereby adjusting the size of the bonding surface. By adjusting the size of the bonding surface, the purpose of controlling the fixing force between the electrodes of the light-emitting diode chip and the transient substrate can be achieved.

[0036] The short-circuit problem of the LED chip's electrodes during the bonding process with the pads can be improved by bonding the LED chip and support module to the backplane. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of a transient substrate manufacturing method according to an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of a substrate in one embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of the support layer in one embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of patterning the support layer in one embodiment of the present invention;

[0041] Figure 5 This is a schematic diagram of the etched support layer in one embodiment of the present invention;

[0042] Figure 6 This is a schematic diagram of the etched support layer in one embodiment of the present invention;

[0043] Figure 7 This is a schematic diagram of the adhesive layer in one embodiment of the present invention;

[0044] Figure 8 This is a schematic diagram illustrating the manufacturing process of a display device according to an embodiment of the present invention;

[0045] Figure 9 This is a schematic diagram of the photoresist layer in one embodiment of the present invention;

[0046] Figure 10 This is a schematic diagram of a photoresist unit after photolithography in one embodiment of the present invention;

[0047] Figure 11 This is a schematic diagram of the structure of a support module formed in one embodiment of the present invention;

[0048] Figure 12 This is a schematic diagram illustrating the manufacturing process of a display device according to an embodiment of the present invention;

[0049] Figure 13 This is a schematic diagram of the substrate generation in one embodiment of the present invention;

[0050] Figure 14 This is a schematic diagram illustrating the alignment of the growth substrate and the transient substrate in one embodiment of the present invention;

[0051] Figure 15 This is a schematic diagram of substrate peeling in one embodiment of the present invention;

[0052] Figure 16 This is a schematic diagram of adhesive layer removal in one embodiment of the present invention;

[0053] Figure 17 This is a schematic diagram of a display device manufacturing method according to an embodiment of the present invention;

[0054] Figure 18 This is a schematic diagram of a transfer substrate in one embodiment of the present invention;

[0055] Figure 19 This is a schematic diagram of the docking of the transfer substrate and the transient substrate in one embodiment of the present invention;

[0056] Figure 20 This is a schematic diagram of a transfer substrate adsorbing a light-emitting diode chip in one embodiment of the present invention;

[0057] Figure 21 This is a schematic diagram of the LED chip being connected to the backplane in one embodiment of the present invention;

[0058] Figure 22 This is a schematic diagram of the bonding between a light-emitting diode chip and a backplane in one embodiment of the present invention;

[0059] Figure 23 This is a schematic diagram of the structure of a display device in one embodiment of the present invention.

[0060] Explanation of reference numerals in the attached figures:

[0061] 1-Substrate; 10-Transient substrate; 2-Support layer; 21-Sacrificial layer; 22-Metal layer; 201-First region; 202-Second region; 3-Photoresist layer; 30-Photoresist unit; 20-Support module; 210-Sacrificial unit; 220-Metal unit; 4-Adhesive layer; 5-Growth substrate; 6-Light emitting diode chip; 61-Electrode; 7-Transfer substrate; 8-Backplane; 81-Pad; 9-Display device; 91-Display unit; 911-Red light emitting diode chip; 912-Green light emitting diode chip; 913-Blue light emitting diode chip. Detailed Implementation

[0062] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0063] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0064] In the manufacturing process of Micro LED or Mini LED, LED chips need to be transferred from the growth substrate to a transient substrate and temporarily stored. This facilitates subsequent transfer of the LED chips to the driving circuitry on the backplane via a transfer substrate. When high structural consistency is required for the LEDs on the transient substrate, the transient substrate needs to provide a large fixing force to prevent structural inconsistencies during chip transfer. Conversely, when the LEDs on the transient substrate are large or the adhesion of the transfer substrate is weak, the transient substrate needs to provide an appropriate fixing force to prevent structural inconsistencies during chip transfer. However, the fixing force of the transient substrate is related to the material properties of the adhesive, making it difficult to adjust the magnitude of this fixing force to meet the requirements of various specifications and application scenarios. This invention provides a transient substrate manufacturing method that improves the control of the fixing force of the transient substrate. Figure 1 As shown, the transient substrate manufacturing method includes:

[0065] S1: Provide a substrate;

[0066] S2: A support layer is formed on the substrate;

[0067] S3: Divide the support layer into regions to form a first region and a second region spaced apart. During the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred.

[0068] S4: Etch the first region to form a plurality of spaced support modules on the second region.

[0069] like Figure 2As shown, in step S1, an exemplary embodiment is provided, wherein a substrate 1 is provided to support the support module and the light-emitting diode chip. The material of the substrate 1 can be selected from one of monocrystalline silicon, quartz, glass, and sapphire. For example, it can be sapphire, monocrystalline silicon, or monocrystalline silicon. After providing the substrate 1, the surface of the substrate 1 can be cleaned.

[0070] like Figure 3 As shown, in step S2, it is illustrated by way of example that the support layer 2 is deposited and grown on the substrate 1. For example, the support layer 2 can be deposited by chemical vapor deposition (CVD), which is a method of synthesizing coatings or nanomaterials by reacting chemical gases or vapors on the surface of a substrate. Alternatively, the support layer 2 can be deposited by physical vapor deposition (PVD), which is a technique of vaporizing the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionizing them into ions, under vacuum conditions using physical methods, and depositing a thin film on the surface of a substrate through a low-pressure gas (or plasma) process.

[0071] like Figure 3 , Figure 4 and Figure 5 In step S3, for example, the support layer 2 is divided into regions to form a first region 201 and a second region 202 spaced apart. During the region division process, the distance between two adjacent first regions 201 and / or two adjacent second regions 202 is adjusted according to the fixing force required for the light-emitting diode chip to be transferred. For example, a mask pattern can be provided to divide the support layer 2 into regions, forming etchable and non-etchable regions, namely, a first region 201 and a second region 202. The shape of the pattern in the mask can be changed to increase or decrease the spacing between the formed first regions 201, thereby increasing or decreasing the size of the second region 202. Alternatively, the spacing between the formed second regions 202 can be increased or decreased, thereby increasing or decreasing the size of the first region 201, to meet the requirements of the fixing force. For example, when a larger fixing force is required, the size of the second region 202 increases and / or the spacing between the second regions 202 decreases. For example, when a smaller fixing force is required, the size of the second region 202 decreases and / or the spacing between the second regions 202 increases. For another example, the size of the second region 202 can be adjusted by adjusting the spacing of the first regions 201. When the spacing of the first regions 201 is large, the size of the second region 202 becomes larger, and correspondingly, when the spacing of the first regions 201 is small, the size of the second region 202 becomes smaller.

[0072] like Figure 3 , Figure 4 and Figure 5 In step S4, the first region 201 is etched to form a plurality of spaced support modules 20 on the second region 202. The size and / or spacing of the support modules 20 affect the size of the bonding surface, wherein the bonding surface includes the contact surface when the support module is bonded to the electrode of the light-emitting diode chip. For example, when the spacing of the support modules 20 is small, the number of support modules 20 bonded to the light-emitting diode chip increases, and therefore the bonding surface also increases. For example, when the size of the support modules 20 is large, the area of ​​the support module 20 bonded to the light-emitting diode increases, and therefore the bonding surface also increases. When the bonding surface is large, the fixing force of the transient substrate is large; when the bonding surface is small, the fixing force of the transient substrate is small.

[0073] like Figure 5 As shown, multiple support modules 20 can be provided, and the multiple support modules 20 can be arranged at intervals on the substrate 1. One end of the support module 20 is connected to the substrate 1, and the other end of the support module 20 can have adhesive properties, which can bond the light-emitting diode chip from the growth substrate and provide fixing force for the transient substrate. When the support modules 20 are arranged at intervals, the structure and arrangement of the support modules 20 affect the size of the bonding surface. By adjusting the size of the bonding surface between the support module 20 and the light-emitting diode chip, the fixing force provided by the transient substrate can be controlled. When the bonding surface is larger, the fixing force of the transient substrate is larger, and when the bonding surface is smaller, the fixing force of the transient substrate is smaller.

[0074] To further adjust the magnitude of the fixing force and improve the threshold range of the fixing force adjustment, such as Figure 6 and Figure 7 As shown, after step S3, the process includes: forming an adhesive layer 4 on the substrate 1, wherein the length of the support module 20 is the same as that of the adhesive layer 4 in a first direction, the first direction including a direction away from the substrate 1. Exemplarily, the first direction includes a direction perpendicular to the substrate 1. The height of the adhesive layer 4 and the support module 20 is the same. Therefore, the adhesive layer 4 and the spaced-apart support module 20 can jointly generate a fixing force on the light-emitting diode chip through the same end face. This fixing force includes the material adhesion force between the adhesive layer 4 and the electrodes of the light-emitting diode chip, and also includes the bonding force between the support module 20 and the electrodes of the light-emitting diode chip. For example, adhesive layers with different material properties can be selected to adjust the magnitude of the adhesion force. Furthermore, the magnitude of the fixing force can be adjusted by adjusting both the adhesion force and the bonding force.

[0075] The structure and arrangement of the support module can be adjusted to change the size of the bonding surface, thereby adjusting the bonding force in the fixing force, such as... Figure 4 , 5 , Figure 6 and Figure 7 As shown, the steps for adjusting the size of the bonding surface include: adjusting the length of the support module 20 in a second direction and / or the spacing between the support modules 20, wherein the second direction is parallel to the plane of the substrate 1. For example, adjusting the spacing between the second regions 202 can adjust the spacing between the support modules 20, thereby adjusting the magnitude of the fixing force. When the spacing between the support modules 20 is small, the density of the support modules 20 is high, and when bonding with the electrodes of the light-emitting diode chip, there are more support modules 20, resulting in a larger fixing force. When the spacing between the support modules 20 is large, the density of the support modules 20 is low, and when bonding with the electrodes of the light-emitting diode chip, there are fewer support modules 20, resulting in a smaller fixing force. For example, the spacing between the first regions 201 can be adjusted to adjust the size of the support module 20. The length of block 20 in the second direction, the area of ​​the end face of the support module 20 away from the substrate 1, and the size of the bonding surface are adjusted. When the end face area is large, the area of ​​the bonding surface increases accordingly when bonding occurs, thereby adjusting the magnitude of the fixing force. For example, the fixing force between the transient substrate and the light-emitting diode chip can be controlled by selecting the material of the adhesive layer 4, adjusting the spacing between the support modules 20, and adjusting the length of the support module 20 in the second direction, thereby increasing the threshold range that the fixing force can be adjusted so that the fixing force meets the requirements of actual application scenarios.

[0076] To facilitate electrode bonding between the support module and the LED chip, and to facilitate the transfer of the bonded LED chip from the transient substrate to the backplane, such as... Figure 3 As shown, the support layer 2 includes a sacrificial layer 21 and a metal layer 22, which are sequentially formed on the substrate 1. Exemplarily, the support layer 2 includes a metal layer 22 for bonding the light-emitting diode (LED) chip and a sacrificial layer 21 for transferring the LED chip. For example, the metal layer 22 can be made of a metallic material, including one or more alloys of aluminum, iron, and tin. Alternatively, the sacrificial layer 21 can be made of an easily decomposable adhesive. When the LED chip needs to be transferred from the transient substrate to the backplane, the adhesive is decomposed to achieve the peeling of the LED chip from the transient substrate. Exemplarily, the material of the sacrificial layer 21 can be gallium nitride. Figure 8 As shown, the step of etching the support layer to form a plurality of spaced support modules on the second region includes:

[0077] S301: A photoresist layer is formed on the metal layer;

[0078] S302: The photoresist layer is patterned to form a plurality of photoresist units spaced apart on the second region;

[0079] S303: Using the photoresist unit as a mask, the metal layer and the sacrificial layer on the first region are etched to form a plurality of spaced-apart support modules on the second region. Figure 4 , 10 and Figure 11 As illustrated in step S303, an etching process is performed on multiple photoresist units 30, the metal layer 22, and the sacrificial layer 21. For example, dry etching (plasma) is used to etch the metal layer 22 and the sacrificial layer 21 on the first region using the photoresist units 30 as a mask. Dry etching may include sputtering etching or chemical etching. Upon completion of etching, the photoresist units 30 are etched, and the metal layer 22 and the sacrificial layer 21 between the photoresist units 30 are etched sequentially to form spaced support modules 20. The support module 20 includes metal units 220 and sacrificial units 210, which are connected to each other. The sacrificial unit 210 is connected to the substrate 1. The end of the support module 20 away from the substrate 1 provides a fixing force to the light-emitting diode chip. The magnitude of the fixing force is adjusted by adjusting the spacing and bonding surface of the support modules 20.

[0080] like Figure 4 and 9 In step S301, it is exemplarily explained that photoresist can be spin-coated onto the metal layer 22 to form a photoresist layer 3, for example, spin-coating a positive photoresist, or, for example, spin-coating a negative photoresist. Figure 4 , 9 and Figure 10 As shown, in step S302, by example, a plurality of photoresist units spaced apart are formed on the second region 202 by patterning the photoresist layer 3. For example, a positive photoresist is spin-coated to facilitate the formation of an exposure pattern on the photoresist layer 3 by exposure and development. For example, the first region 201 can be exposed, developed, and then the first region 201 can be cleaned, leaving the second region 202. Alternatively, a negative photoresist can be spin-coated, the second region 202 can be exposed, developed, and then the first region 201 can be cleaned, leaving the second region 202.

[0081] To adjust the size of the bonding surface, the structure and arrangement of the formed photoresist units 30 are controlled during the etching process, such as... Figure 4 , Figure 9 , Figure 10 and Figure 11As shown, when the photoresist layer 3 is a positive photoresist layer, the first region 201 is exposed and developed. The positive photoresist in the first region 201 decomposes after exposure and is dissolved and removed by development. By controlling the exposure area and / or spacing of the first region 201, the size and / or spacing of the formed photoresist units 30 are adjusted, thereby forming a plurality of spaced photoresist units 30 on the second region 202. For example, by controlling the exposure area of ​​the first region 201, increasing or decreasing the exposure area, the size of the photoresist units 30 is reduced or increased. For example, by increasing or decreasing the spacing of the first region 201, the spacing and size of the photoresist units 30 are increased or decreased. When photoresist layer 3 is a negative photoresist layer, the second region 202 is exposed and the first region 201 is developed. The negative photoresist in the second region 202 cures after exposure. The photoresist in the first region 201 is dissolved and removed by development. By controlling the exposure area and / or spacing of the second region 202, the size and / or spacing of the formed photoresist units 30 are adjusted, thereby forming multiple photoresist units 30 with controllable spacing on the second region 202. For example, by controlling the exposure area of ​​the second region 202, increasing or decreasing the exposure area, the size of the photoresist units 30 can be increased or decreased. For example, by increasing or decreasing the spacing of the second region 202, the spacing or size of the photoresist units 30 can be increased or decreased.

[0082] To ensure that the transient substrate exerts a uniform and consistent fixing force on the LED chip, such as Figure 11 As shown, multiple support modules 20 are equidistantly spaced on the substrate 1. The spacing between the support modules 20 can be adjusted to regulate the number of support modules 20 bonded to the LED chip, thereby adjusting the fixing force between the LED chip and the transient substrate. The uniformly arranged support modules 20 provide uniform fixing force, ensuring a high degree of structural consistency of the LED chip on the transient substrate. In some embodiments, adhesives with different material properties can be selected as the adhesive layer material according to the fixing force requirements. The adhesive layer material includes polyimide or polyurethane, or a mixture thereof. For example, the adhesive layer material can include polyimide (PI), a type of polymer containing imide rings (-CO-N-CO-) in its main chain. It is an elastic organic polymer material with good insulation properties. Another example is that the adhesive layer material can include polyurethane (PU), a polymer containing repeating -HNCOO- structural units in its main chain. It is generally formed by addition polymerization of polyisocyanates and polyol polymers. The ratio of NCO to OH in the polymer can also be changed to obtain polyurethane with certain elasticity, thermosetting properties, thermoplasticity and good insulation properties.

[0083] like Figure 10 As shown, in order to facilitate the decomposition of the sacrificial layer 21 and the connection between the support module and the substrate 1 through the sacrificial layer 21, the material of the sacrificial layer 21 includes gallium nitride. For example, the sacrificial layer 21 can be decomposed by laser lift-off (LLO) technology. The connection between gallium nitride and substrate 1 is decomposed by laser energy, which facilitates the selective removal of the light-emitting diode chip carried on the substrate 1 and enables the directional removal of the light-emitting diode.

[0084] The transient substrate provides a fixing force to support the LED chip transferred from the growth substrate. However, the magnitude of this fixing force is related to the material properties of the adhesive, making it difficult to adjust. This can lead to a mismatch between the fixing force required by the LED chip and the fixing force provided by the transient substrate. Figure 12 The present invention also provides a method for manufacturing a display device to improve the problem of inconvenience in adjusting the magnitude of the fixing force, comprising:

[0085] S10: A growth substrate is provided, on which a plurality of light-emitting diode chips to be transferred are disposed;

[0086] S20: A transient substrate is provided, a support layer is formed on the substrate of the transient substrate, the support layer is divided into regions to form a first region and a second region spaced apart, wherein, during the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred, and the first region is etched to form a plurality of support modules spaced apart on the second region.

[0087] S30: Align the growth substrate with the transient substrate, and bond the electrodes of the light-emitting diode chip to the support module;

[0088] S40: The light-emitting diode chip is peeled off from the growth substrate.

[0089] like Figure 13 As shown, in step S10, by way of example, a growth substrate 5 is provided, and the side of the light-emitting diode chip 6 away from the electrode is connected to the growth substrate 5. The growth substrate 5 is used to move the light-emitting diode chip 6 to above the transient substrate 10.

[0090] like Figure 14As shown, in step S20, the support layer 2 is divided into regions to form a first region 201 and a second region 202 spaced apart. During the region division process, the distance between two adjacent first regions 201 and / or two adjacent second regions 202 is adjusted. For example, a mask pattern can be provided by a mask to pattern the support layer 2, forming etchable and non-etchable regions, namely the first region 201 and the second region 202. For the first region 201, the shape of the pattern in the mask can be changed, so that the spacing between the formed first regions 201 increases or decreases, thereby increasing or decreasing the size of the second region 202, or vice versa.

[0091] like Figure 14 as well as Figure 15 As shown, in step S30, by moving the growth substrate 5, the electrode 61 of the light-emitting diode chip 6 on the growth substrate 5 is aligned with the transient substrate to meet the requirements of the transient substrate to support and fix the light-emitting diode chip. The electrode 61 of the light-emitting diode chip 6 is bonded to the support module 20.

[0092] like Figure 15 As shown, the step of bonding the electrode 61 of the light-emitting diode chip 6 to the support module 20 further includes:

[0093] The adhesive layer 4 is formed on the substrate 1, and the support module 20 has the same length as the adhesive layer 4 in a first direction, which includes a direction away from the substrate 1. For example, the first direction is perpendicular to the substrate 1. The electrodes 61 of the light-emitting diode chip 6 are bonded to the support module 20 and the adhesive layer 4 respectively. For example, the adhesive layer 4 and the spaced-apart support module 20 can jointly generate a fixing force on the light-emitting diode chip through the same end face. This fixing force includes the material adhesion force between the adhesive layer 4 and the electrodes of the light-emitting diode chip, and also includes the bonding force between the support module 20 and the electrodes of the light-emitting diode chip. The light-emitting diode chip can be fixed by the adhesion force and the bonding force. The magnitude of the fixing force between the transient substrate and the light-emitting diode chip can also be controlled by the material selection of the adhesive layer 4 and the size of the bonding surface, increasing the adjustable threshold range of the fixing force so that the fixing force can meet the requirements of many practical application scenarios.

[0094] like Figure 15 and Figure 16 As shown, after the light-emitting diode chip 6 on the growth substrate 5 is aligned and bonded to the transient substrate, the growth substrate 5 and the light-emitting diode chip 6 are peeled off, or the adhesive layer 4 can be removed.

[0095] In the Micro-LED manufacturing process, the LED chip needs to be transferred from the transient substrate to the backplane, and the electrodes of the LED chip need to be bonded to the pads on the driving circuit of the backplane. During the bonding process, short circuits can easily occur on the electrodes, such as... Figure 17 As shown, the method for manufacturing the display device further includes:

[0096] S21: Provide a transfer substrate and attach the transfer substrate to the light-emitting diode chip;

[0097] S31: Align the light-emitting diode chip and support module with the backplate by moving the transfer substrate;

[0098] S41: Bond the corresponding pads on the backplate to the electrodes of the light-emitting diode chip and the support module respectively.

[0099] like Figure 18 and 19 As shown, in step S21, it is exemplarily explained that the material of the side of the transfer substrate 7 used to attach the light-emitting diode chip can be polydimethylsiloxane (PDMS). The light-emitting diode chip 6 carried on the transient substrate is transferred by the adsorption effect of polydimethylsiloxane.

[0100] like Figure 18 and 19 As shown, in step S21, the transfer substrate 7 is moved toward the transient substrate and the transfer substrate 7 is attached to the light-emitting diode chip 6.

[0101] like Figure 20 and Figure 21 In step S31, exemplarily, the LED chip 6 and support module on the transient substrate are peeled off by the transfer substrate 7. For example, the electrodes 61 of the LED chip 6 in the peeled state are connected to metal units 220, and the LED chip 6 is moved to the corresponding position on the back plate 8, completing the transfer of the LED chip 6 from the transient substrate to the back plate 8. For example, the LED chip 6 is moved by the transfer substrate 7, and its electrodes 61 and support module are aligned with the pads 81 of the driving circuit on the back plate 8.

[0102] like Figure 22As shown, in step S41, the electrode 61 and the support module are bonded to the pad 81, for example by welding. This can confine the solder or adhesive between the spaced support modules on the electrode 61, thus wetting the solder or adhesive and improving the short circuit problem during welding. Alternatively, the electrode 61 and the metal unit 220 are bonded to the pad 81, with the metal units 220 spaced apart. This can confine the solder between adjacent metal units 220, thus wetting the solder and improving the short circuit problem during welding.

[0103] In some embodiments, step S31 includes:

[0104] S311: The support module includes a metal unit and a sacrificial unit. The metal unit is connected to the sacrificial unit, and the metal unit is disposed away from the substrate, while the sacrificial unit is disposed close to the substrate, thereby decomposing the sacrificial unit.

[0105] S312: Align the electrodes of the light-emitting diode chip and the corresponding metal units with the backplate using the transfer substrate.

[0106] like Figure 18 As shown, in step S311, for example, the support module 20 includes: a metal unit 220 for bonding the light-emitting diode chip and a sacrificial unit 210 for transferring the light-emitting diode chip. For example, the material of the metal unit 220 can be a metal material, including one or more alloys of aluminum, iron, and tin. For another example, the sacrificial unit 210 can be an adhesive material that is easy to decompose. When it is necessary to transfer the light-emitting diode chip from the transient substrate to the back plate, the adhesive material is decomposed to achieve the peeling of the light-emitting diode chip from the transient substrate. For another example, the material of the sacrificial unit 210 can be gallium nitride. The gallium nitride at the connection between the light-emitting diode chip to be transferred and the transient substrate can be irradiated using LLO technology to decompose it.

[0107] like Figure 18 and Figure 22 As shown, in step S312, for example, the electrode 61 and the corresponding metal unit 220 are bonded to the pad 81 respectively, for example by welding. This can confine the solder or adhesive to prevent the electrode 61 from being between the spaced support modules, thus wetting the solder or adhesive and improving the short circuit problem during the welding process.

[0108] In some embodiments, the fixing force can be provided by the adhesive layer and the support module together, depending on whether the fixing force is provided by the transient substrate or the fixing force required to connect the LED chip to the transient substrate. Therefore, before transferring the LED, the adhesive layer needs to be removed, for example, before step S21:

[0109] The adhesive layer, which is disposed on the substrate, is removed, and the support module has the same length as the adhesive layer in a first direction, which includes a direction away from the substrate. In some implementations, for example, the adhesive layer is removed using an etching process, such as inductively coupled plasma (ICP), which uses high-density plasma generated by gas glow discharge to bombard the material surface to remove the adhesive layer attached to the substrate and the support module, so as to facilitate the transfer of the light-emitting diode chip from the transient substrate to the backplane via a transfer substrate.

[0110] The present invention also provides a display device, including a backplate and a plurality of light-emitting diode chips, wherein the electrodes of the light-emitting diode chips are provided with support modules, the support modules are spaced apart, the backplate is provided with a driving circuit, and the pads on the driving circuit are bonded to the electrodes and the corresponding support modules.

[0111] like Figure 23 As illustrated, the display device 9 includes a backplate 8 and a plurality of display units 91. A driving circuit is provided on the backplate. Each display unit includes a light-emitting diode (LED) chip, and a support module is provided on the electrodes of the LED chip. The electrodes and the corresponding support modules are bonded to pads on the driving circuit. In some embodiments, each display unit 91 includes LED chips of different types. For example, each display unit 91 includes at least one red chip 911, at least one green LED chip 912, and at least one blue LED chip 913. The various types of LED chips on the display unit 91 are bonded to corresponding pads on the driving circuit. Signal control is achieved through the driving circuit on the backplate 8, enabling the LED chips in the display unit 91 to be turned on or off, their brightness to increase or decrease, or their saturation to increase or decrease, thereby allowing the display unit 91 to display specific colors, brightness levels, or saturation. Bonding the electrodes and support modules to the pads, for example by welding, can confine the solder or adhesive between the spaced support modules on the electrodes, thus wetting the solder or adhesive, improving the short circuit problem during the welding process, ensuring the uniformity of the LED chip quality, avoiding dead pixels in the display unit, or avoiding deviations in color, brightness, or saturation.

[0112] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for manufacturing a transient substrate, characterized in that, include: Provide a substrate; A support layer is formed on the substrate; The support layer is divided into regions to form a first region and a second region that are spaced apart. During the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred. The first region is etched to form a plurality of spaced support modules on the second region.

2. The transient substrate manufacturing method according to claim 1, characterized in that, The steps following the formation of a plurality of spaced-apart support modules in the second region include: An adhesive layer is formed on the substrate, and the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

3. The transient substrate manufacturing method according to claim 1, characterized in that, The step of forming a support layer on the substrate includes: A sacrificial layer and a metal layer are sequentially formed on the substrate.

4. The transient substrate manufacturing method according to claim 3, characterized in that, The step of etching the first region to form a plurality of spaced support modules on the second region includes: A photoresist layer is formed on the metal layer, and the photoresist layer corresponding to the first region is developed to form a plurality of photoresist units spaced apart on the second region. Using the photoresist unit as a mask, the metal layer and the sacrificial layer on the first region are etched to form a plurality of spaced-apart support modules on the second region.

5. The transient substrate manufacturing method according to claim 4, characterized in that, The photoresist layer is a positive photoresist layer, which exposes and develops the first region to control the size and / or spacing of the formed photoresist units.

6. The transient substrate manufacturing method according to claim 4, characterized in that, The photoresist layer is a negative photoresist layer. The second region is exposed and the first region is developed to control the size and / or spacing of the formed photoresist units.

7. The transient substrate manufacturing method according to claim 1, characterized in that, Multiple support modules are equidistantly spaced on the substrate.

8. A method for manufacturing a display device, characterized in that, include: A growth substrate is provided, on which a plurality of light-emitting diode chips to be transferred are disposed; A transient substrate is provided, and a support layer is formed on the substrate of the transient substrate. The support layer is divided into regions to form a first region and a second region that are spaced apart. During the region division process, the distance between two adjacent first regions and / or two adjacent second regions is adjusted according to the fixing force required for the light-emitting diode chip to be transferred. The first region is etched to form a plurality of support modules that are spaced apart on the second region. The growth substrate and the transient substrate are aligned, and the electrodes of the light-emitting diode chip are bonded to the support module; The light-emitting diode chip is peeled off from the growth substrate.

9. The method for manufacturing a display device according to claim 8, characterized in that, Before the step of bonding the electrodes of the light-emitting diode chip to the support module, the following steps are included: An adhesive layer is formed on the substrate, and the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

10. The method for manufacturing a display device according to claim 9, characterized in that, The step of bonding the electrodes of the light-emitting diode chip to the support module further includes: The electrodes of the light-emitting diode chip are bonded to the support module and the adhesive layer, respectively.

11. The method for manufacturing a display device according to any one of claims 8 to 10, characterized in that, Also includes: A transfer substrate is provided, and the transfer substrate is bonded to the light-emitting diode chip; The light-emitting diode chip and the support module are aligned with a backplate via the transfer substrate. The corresponding pads on the backplate are bonded to the electrodes of the light-emitting diode chip and the support module, respectively.

12. The method for manufacturing a display device according to claim 11, characterized in that, The support module includes a metal unit and a sacrificial unit. The metal unit is connected to the sacrificial unit, and the metal unit is disposed away from the substrate, while the sacrificial unit is disposed close to the substrate, thus decomposing the sacrificial unit. The electrodes of the light-emitting diode chip and the corresponding metal units are aligned with the backplate by moving the transfer substrate.

13. The method for manufacturing a display device according to claim 11, characterized in that, Prior to providing a transfer substrate and bonding the transfer substrate to the light-emitting diode chip, the method includes: removing an adhesive layer disposed on the substrate, wherein the support module has the same length as the adhesive layer in a first direction, the first direction including a direction away from the substrate.

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