An isolation element, interlayer structure and OLED device

Abstract

This application provides an isolation element, an interlayer structure, and an OLED device. The isolation element is disposed between the electrode and the light-emitting layer of the OLED device, and includes a conductive capsule and an insulating medium disposed within the conductive capsule. When the short-circuit temperature generated by a foreign object within the OLED device exceeds the melting point of the conductive capsule, the conductive capsule ruptures due to heat, thereby isolating the foreign object by the insulating medium. This structure avoids short circuits in the OLED device caused by foreign objects, thus improving the lifespan of the OLED device.

Description

Technical Field

[0001] This disclosure generally relates to the field of OLED device technology, and specifically to an isolation element, interlayer structure, and OLED device. Background Technology

[0002] Organic light-emitting diode (OLED) devices have been widely used due to their advantages such as good self-emission characteristics, high contrast, fast response and flexible display.

[0003] OLED devices typically have positive and negative electrodes and a light-emitting layer disposed between the positive and negative electrodes. During the production of OLED devices, when foreign objects adhere to or are doped into the film layer of the OLED device, the foreign objects can easily directly connect the positive and negative electrodes, causing a short circuit in the OLED device. Summary of the Invention

[0004] Given the defects or deficiencies in the existing technology where foreign objects can easily directly connect the positive and negative electrodes during the production process, causing short circuits in OLED devices, it is desirable to provide an isolation element, interlayer structure, and OLED device that can solve the above-mentioned technical problems.

[0005] The first aspect of this application provides an isolation element for an OLED device, which is disposed between the electrode and the light-emitting layer of the OLED device, and includes a conductive capsule and an insulating medium disposed within the conductive capsule.

[0006] According to the technical solution provided in the embodiments of this application, the conductive capsule is made of a conductive medium, and the conductive medium has a preset melting point.

[0007] According to the technical solution provided in the embodiments of this application, the conductive capsule is obtained by spin coating, sputtering, imprinting or vapor deposition of the conductive medium on the outer surface of the insulating medium, and two adjacent conductive capsules are in contact with each other.

[0008] According to the technical solution provided in the embodiments of this application, the isolation element further includes a conductive substrate, the conductive substrate having a plurality of cavities inside, and the conductive capsule being formed between the inner walls of each cavity.

[0009] According to the technical solution provided in the embodiments of this application, the conductive medium is nano-silver powder or indium gallium alloy.

[0010] According to the technical solution provided in the embodiments of this application, the insulating medium is a solid insulating powder and / or solid insulating particles, and the material of the solid insulating powder and / or solid insulating particles is one or more of silicon dioxide, silicon oxide, and silicon nitride.

[0011] According to the technical solution provided in the embodiments of this application, the insulating medium is a liquid insulating medium, so that when the conductive capsule is heated and ruptures, the insulating medium flows out and adheres to the surface of the foreign object.

[0012] According to the technical solution provided in the embodiments of this application, the liquid insulating medium is an electronic fluorinated liquid.

[0013] According to the technical solution provided in the embodiments of this application, the diameter of the conductive capsule is 10nm-10um.

[0014] A second aspect of this application provides an interlayer structure for an OLED device, including a buffer isolation layer formed by arranging at least one isolation element of the OLED device as described above, the buffer isolation layer being disposed between the electrode and the light-emitting layer of the OLED device.

[0015] According to the technical solution provided in the embodiments of this application, when the conductive capsule in the isolation element of the OLED device is obtained by spin-coating or vapor-depositing the conductive medium on the outer surface of the insulating medium, the isolation elements of two adjacent OLED devices are in contact with each other.

[0016] According to the technical solution provided in the embodiments of this application, a grid structure is formed between the conductive capsules of the buffer isolation layer, and the grid structure is used to reduce light crosstalk of the light-emitting layer.

[0017] A third aspect of this application provides an OLED device, including an electrode, a light-emitting layer, and an interlayer structure as described above for the OLED device; the interlayer structure of the OLED device is disposed between the electrode and the light-emitting layer.

[0018] The beneficial effects of this application are as follows: by setting an isolation element between the electrode and the light-emitting layer, when foreign matter doped or attached to the OLED device connects the positive and negative electrodes, the short-circuit temperature generated will melt the conductive bladder of the corresponding isolation element, causing the conductive bladder to rupture. The insulating medium inside the conductive bladder will cover and isolate the foreign matter, avoiding short circuits in the OLED device and improving the service life of the OLED device. Attached Figure Description

[0019] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0020] Figure 1 This is a schematic diagram of the structure of an OLED device in the prior art;

[0021] Figure 2 A schematic diagram of an example structure of the isolation element of the OLED device provided in this application;

[0022] Figure 3A schematic diagram of another example structure of the isolation element for the OLED device provided in this application;

[0023] Figure 4 for Figure 2 The insulating medium 32 shown is a schematic diagram of the structure of multiple solid insulating particles;

[0024] Figure 5 for Figure 3 The insulating medium 32 shown is a schematic diagram of the structure of multiple solid insulating particles;

[0025] Figure 6 A schematic diagram of the interlayer structure of an OLED device provided in this application;

[0026] Figure 7 A schematic diagram of the interlayer structure of the OLED device provided in this application (Example B).

[0027] Figure 8 A schematic diagram of the interlayer structure of an OLED device provided in this application (Example C).

[0028] Figure 9 A schematic diagram of the interlayer structure of an OLED device provided in this application, specifically example D.

[0029] Figure 10 A schematic diagram of the interlayer structure of an OLED device provided in this application;

[0030] Figure 11 This is a schematic diagram of the structure of the OLED device provided in this application;

[0031] Numbering on the map:

[0032] 1. Electrode; 11. Positive electrode; 12. Negative electrode; 2. Light-emitting layer; 3. Buffer isolation layer; 31. Conductive capsule; 32. Insulating medium; 33. Conductive substrate; 4. Encapsulation layer; 5. Substrate. Detailed Implementation

[0033] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0034] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0035] Example 1

[0036] In existing technologies, the structure of OLED devices is as follows: Figure 1 As shown, it includes positive and negative electrodes and a light-emitting layer disposed between the positive and negative electrodes; when foreign matter is doped or attached between the positive and negative electrodes, the foreign matter can easily directly connect the positive and negative electrodes, causing a short circuit in the OLED device.

[0037] Therefore, this embodiment provides an isolation element for an OLED device, which is disposed between the electrode 1 and the light-emitting layer 2 of the OLED device, such as... Figure 2 , Figure 3 As shown, it includes a conductive capsule 31 and an insulating medium 32 disposed within the conductive capsule 31;

[0038] When the short-circuit temperature generated by the foreign object in the OLED device exceeds the melting point of the conductive capsule 31, the conductive capsule 31 ruptures due to heat, so that the insulating medium 32 isolates the foreign object.

[0039] Specifically, the conductive capsule 31 of the isolation element can be a plurality of ones, that is, one, two or more;

[0040] Specifically, the conductive envelope 31 is made of a conductive medium, and the conductive medium has a preset melting point. The preset temperature can be set according to actual needs; preferably, the preset temperature is 50-800℃, for example, 150℃. It should be further noted that when foreign matter doped or attached to the OLED device connects the positive and negative electrodes, a short-circuit temperature will be generated, releasing high heat; therefore, the melting point of the selected conductive medium should be lower than this short-circuit temperature so that the conductive medium melts during a short circuit, and the insulating medium 32 covers and isolates the foreign matter.

[0041] Specifically, the diameter of the conductive capsule 31 is 10 nm-10 μm. ， To avoid the conductive capsule 31 being too thick, which would cause excessive voltage and affect performance, and also to avoid the thickness being too small to fill and cover foreign objects.

[0042] In some embodiments, the electrode 1 includes a positive electrode 11 and / or a negative electrode 12. That is, the isolation element of the OLED device may be disposed between the positive electrode 11 and the light-emitting layer 2, or between the negative electrode 12 and the light-emitting layer 2, or simultaneously disposed between the positive electrode 11, the negative electrode 12 and the light-emitting layer 2.

[0043] In some embodiments, the conductive capsule 31 is obtained by spin coating, sputtering, embossing or vapor deposition of the conductive medium on the outer surface of the insulating medium 32.

[0044] In some embodiments, two adjacent conductive capsules 31 are in contact with each other, which can ensure the photoelectric performance of the OLED screen and avoid voltage increase and efficiency reduction.

[0045] like Figure 2 As shown, each OLED device has an insulating element with two layers, an outer conductive capsule 31, which is obtained by spin-coating, sputtering, imprinting or vapor-depositing a conductive medium onto the outer surface of the inner insulating medium 32.

[0046] In other embodiments, the isolation element includes a conductive substrate 33, the conductive substrate 33 having a plurality of cavities inside, and the conductive capsule 31 being formed between the inner walls of each cavity.

[0047] like Figure 3 As shown, a conductive substrate 33 is first prepared using a conductive medium. The shape of the conductive substrate 33 can be set according to actual needs. Honeycomb holes are formed on the conductive substrate 33, and an insulating medium 32 is placed inside each honeycomb hole. The openings are then coated with a conductive medium to form several cavities within the conductive substrate 33. The conductive capsule 31 is formed between the inner walls of these cavities. In other embodiments, the conductive medium 32 can also be prepared using a conductive medium... Figure 2 The isolation element shown (i.e., an isolation element with an outer conductive bladder 31 and an inner insulating medium 32) is doped into the conductive substrate 33 by spin coating, sputtering, or imprinting.

[0048] The conductive substrate 33 is preferably made of an electron transport or hole transport material, i.e., a material with high electron mobility or hole mobility.

[0049] Working principle: By setting an isolation element between electrode 1 and light-emitting layer 2, when foreign matter doped or attached to the OLED device connects the positive and negative electrodes, the short-circuit temperature generated will melt the conductive bladder 31 of the corresponding isolation element, causing the conductive bladder 31 to rupture. The insulating medium 32 inside the conductive bladder 31 will cover and isolate the foreign matter, preventing short circuits in the OLED device and improving the lifespan of the OLED device.

[0050] Example 2

[0051] Based on Example 1, in some embodiments, the conductive medium is nano-silver powder or indium gallium alloy.

[0052] Specifically, the nano-silver powder is conductive and has a melting point of 100 degrees Celsius.

[0053] In some embodiments, the insulating medium 32 is solid insulating powder and / or solid insulating particles.

[0054] Specifically, the solid insulating powder and / or solid insulating particles are made of one or more of silicon dioxide, silicon oxide, and silicon nitride.

[0055] Specifically, when the insulating medium 32 is selected as solid insulating particles, each conductive capsule 31 contains:

[0056] 1. Select solid insulating particles with larger diameters, and use one solid insulating particle within each conductive capsule 31, such as... Figure 2 , Figure 3 As shown;

[0057] 2. Solid insulating particles with small diameters are selected, and multiple solid insulating particles are used within each conductive capsule 31. This ensures that when the conductive capsule 31 ruptures, multiple solid insulating particles with small diameters flow out, effectively covering and isolating foreign matter. Figure 4 , Figure 5 As shown.

[0058] In some embodiments, the insulating medium 32 is a liquid insulating medium, so that when the conductive capsule ruptures due to heat, the insulating medium flows out and adheres to the surface of the foreign object.

[0059] Specifically, the liquid insulating medium is an electronic fluorinated liquid.

[0060] Example 3

[0061] This embodiment provides an interlayer structure for an OLED device, including a buffer isolation layer 3 formed by arranging at least one isolation element of the OLED device as described above, the buffer isolation layer 3 being disposed between the electrode 1 and the light-emitting layer 2 of the OLED device.

[0062] Furthermore, the buffer isolation layer 3 includes several isolation elements, that is, the number of isolation elements can be one, two or more;

[0063] Furthermore, the buffer isolation layer 3 may have one, two, or multiple layers.

[0064] Furthermore, in order to enhance the light extraction effect, nanoscale (e.g., tens to hundreds of nanometers) titanium dioxide or zirconia can be added to the buffer isolation layer 3.

[0065] In some embodiments, when the conductive capsule 31 in the isolation element of the OLED device is obtained by spin-coating or vapor-depositing the conductive medium on the outer surface of the insulating medium 32, the isolation elements of two adjacent OLED devices are in contact with each other, ensuring the photoelectric performance of the OLED screen and avoiding voltage rise and efficiency reduction.

[0066] To facilitate understanding by those skilled in the art, specific examples are provided below:

[0067] Example A

[0068] like Figure 6As shown, the buffer isolation layer 3 is formed by arranging multiple isolation elements. Each isolation element has a conductive capsule 31 and an insulating medium disposed within the conductive capsule 31. Each isolation element has two layers, an inner and an outer layer. The outer conductive capsule 31 is obtained by spin coating, sputtering, imprinting or vapor deposition of the conductive medium on the outer surface of the insulating medium 32.

[0069] In the production process, an isolation element with inner and outer layers is first prepared by the above method, and then multiple isolation elements are arranged to form a single-layer buffer isolation layer.

[0070] Example B

[0071] like Figure 7 As shown, the buffer isolation layer 3 is formed by arranging multiple isolation elements as in Example A to form a multi-layer buffer isolation layer, thereby playing a multi-layer buffer isolation role and avoiding the inability to completely cover large foreign objects.

[0072] Example C

[0073] like Figure 8 As shown, the buffer isolation layer 3 is formed by arranging isolation elements, the isolation element including a conductive substrate 33, the conductive substrate 33 having a plurality of cavities inside, and the conductive capsule 31 formed between the inner walls of each cavity.

[0074] In the production process, a conductive substrate 33 is first prepared using a conductive medium. The shape of the conductive substrate 33 can be set according to actual needs. Honeycomb holes are formed on the conductive substrate 33, and an insulating medium is placed into each of the honeycomb holes. The openings are then coated with a conductive medium to form several cavities within the conductive substrate 33. The conductive capsule 31 is formed between the inner walls of these cavities. In other embodiments, an insulating medium can also be used... Figure 2 The isolation element shown (i.e., the isolation element with an outer conductive bladder 31 and an inner insulating medium 32) is doped into the conductive substrate 33 by spin coating, sputtering or imprinting.

[0075] The conductive substrate 33 is preferably made of an electron transport or hole transport material, i.e., a material with high electron mobility or hole mobility.

[0076] Example D

[0077] like Figure 9 As shown, the isolation element is formed by arranging multiple isolation elements as in Example C to form a single-layer buffer isolation layer.

[0078] Example E

[0079] like Figure 10As shown, the buffer isolation layer 3 is formed by arranging multiple isolation elements as in Example C to form a multi-layer buffer isolation layer, thereby playing a multi-layer buffer isolation role and avoiding the inability to completely cover large foreign objects.

[0080] Example 4

[0081] Based on Embodiment 3, in some embodiments, a grid structure is formed between the conductive capsules 31 of the buffer isolation layer 3, and the grid structure is used to reduce light crosstalk of the light-emitting layer 2.

[0082] It should be further explained that a grid structure is formed between multiple conductive capsules 31. That is, with the arrangement of conductive capsules 31, the critical surface of the interlayer structure changes from a plane to a sphere (or curved surface), so that more light rays can be emitted from the light-emitting layer without being absorbed within the critical angle range, thereby improving the light emission efficiency of the light source, reducing light loss caused by the waveguide effect of light, and reducing light crosstalk of the light-emitting layer 2.

[0083] Example 5

[0084] This embodiment provides an OLED device, such as Figure 11 As shown, it includes an electrode 1, a light-emitting layer 2, and an interlayer structure of the OLED device as described above; the interlayer structure of the OLED device is disposed between the electrode 1 and the light-emitting layer 2.

[0085] Specifically, the OLED device includes, in sequence, an encapsulation layer 4, a negative electrode 12, a light-emitting layer 2, a positive electrode 11, and a substrate 5; the interlayer structure of the OLED device is disposed between the negative electrode 12 and the light-emitting layer 2, and / or between the positive electrode 11 and the light-emitting layer 2.

[0086] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. An isolation element for an OLED device, characterized in that, The electrode (1) and the light-emitting layer (2) of the OLED device are disposed between the electrode (1) and the light-emitting layer (2), including a conductive capsule (31) and an insulating medium disposed in the conductive capsule (31); when the short-circuit temperature generated by the foreign object in the OLED device exceeds the melting point of the conductive capsule (31), the conductive capsule (31) is heated and ruptures, so that the insulating medium (32) isolates the foreign object.

2. The isolation element of the OLED device according to claim 1, characterized in that, The conductive capsule (31) is made of a conductive medium, and the conductive medium has a preset melting point; the conductive medium is nano-silver powder or indium gallium alloy, and the diameter of the conductive capsule (31) is 10 mm. nm -10 um .

3. The isolation element of the OLED device according to claim 1, characterized in that, The two adjacent conductive capsules (31) are in contact with each other.

4. The isolation element of the OLED device according to claim 2, characterized in that, The conductive capsule (31) is obtained by spin coating, sputtering, embossing or vapor deposition of the conductive medium on the outer surface of the insulating medium (32).

5. The isolation element of the OLED device according to claim 2, characterized in that, The isolation element further includes a conductive substrate (33), which has a plurality of cavities inside, and a conductive capsule (31) is formed between the inner walls of each cavity.

6. The isolation element of the OLED device according to any one of claims 1-5, characterized in that, The insulating medium (32) is solid insulating powder and / or solid insulating particles. The solid insulating powder and / or solid insulating particles are made of one or more of silicon dioxide, silicon oxide, and silicon nitride.

7. The isolation element of the OLED device according to any one of claims 1-5, characterized in that, The insulating medium (32) is a liquid insulating medium, so that when the conductive capsule is heated and ruptures, the insulating medium flows out and adheres to the surface of the foreign object; the liquid insulating medium is an electronic fluorinated liquid.

8. An interlayer structure for an OLED device, characterized in that, It includes a buffer isolation layer (3) formed by arranging at least one isolation element of the OLED device as described in any one of claims 1-7, the buffer isolation layer (3) being disposed between the electrode (1) and the light-emitting layer (2) of the OLED device.

9. The interlayer structure of the OLED device according to claim 8, characterized in that, When the conductive capsule (31) in the isolation element of the OLED device is obtained by spin coating or vapor deposition of the conductive medium on the outer surface of the insulating medium (32), the isolation elements of two adjacent OLED devices come into contact with each other.

10. An OLED device, characterized in that, It includes an electrode (1) and a light-emitting layer (2) as well as the interlayer structure of the OLED device as described in claim 8; the interlayer structure of the OLED device is disposed between the electrode (1) and the light-emitting layer (2).

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