A method for manufacturing a display panel, and a display device
By creating a raised structure and a planar layer in the display panel, the anode and auxiliary electrode are placed in the same layer, simplifying the preparation process of the auxiliary electrode, improving production efficiency and product yield, and solving the problem of low production efficiency and yield in the existing technology.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2023-02-22
- Publication Date
- 2026-07-24
AI Technical Summary
Existing technologies require multiple deposition, masking, and etching processes to form auxiliary electrodes, which reduces the production efficiency and yield of display panels.
A raised structure and a planarization layer are formed on one side of the substrate so that their orthographic projections do not overlap. Then, an anode layer and an auxiliary electrode layer are formed on the side of the planarization layer away from the substrate. The anode layer and the auxiliary electrode layer are disposed in the same layer, which simplifies the fabrication steps of the auxiliary electrode.
By simplifying the preparation steps of auxiliary electrodes, the production efficiency and product yield of display panels are improved, avoiding the problems of slow production cycle and low yield caused by complex processes.
Smart Images
Figure CN116056530B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of display technology, and more specifically, to a display panel, a method for manufacturing the same, and a display device. Background Technology
[0002] Recently, large-size OLED (Organic Light-Emitting Diode) products have gradually become a new growth hotspot due to their high contrast and self-emissive characteristics. For large-size OLEDs, top-emitting structures have a higher aperture ratio and a higher pixel count compared to bottom-emitting structures.
[0003] In the design of ultra-large OLED top-emitting structure display products, auxiliary electrode technology must be used to reduce the voltage drop of the thin-film transistor cathode. Therefore, the method of connecting the cathode to the auxiliary electrode has become an important technology.
[0004] Currently, the formation of auxiliary electrodes requires multiple deposition, masking, and etching processes, which reduces the production efficiency and yield of display panels. Summary of the Invention
[0005] This application provides a method for manufacturing a display panel and a display device, which aims to reduce the manufacturing process steps of auxiliary electrodes in the display panel and improve the production efficiency and product yield of the display panel.
[0006] The first aspect of this application provides a method for manufacturing a display panel, the method comprising:
[0007] Provide substrates;
[0008] At least one protrusion structure is formed on one side of the substrate.
[0009] A planarization layer is formed on one side of the substrate, wherein the orthographic projection of the planarization layer on the substrate does not overlap with the orthographic projection of the protrusion structure on the substrate.
[0010] An anode layer is formed on the side of the planar layer opposite to the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure opposite to the substrate.
[0011] Wherein, the orthographic projection of the anode layer on the substrate does not overlap with the orthographic projection of the auxiliary electrode layer on the substrate, and the anode layer and the auxiliary electrode layer are disposed in the same layer.
[0012] Optionally, the protrusion structure includes a first metal layer, a second metal layer and a third metal layer stacked together, wherein the first metal layer is disposed close to the substrate.
[0013] Wherein, the orthogonal projection of the second metal layer on the substrate is located within the orthogonal projection range of the first metal layer and the third metal layer on the substrate.
[0014] Optionally, the step of forming a planarization layer on one side of the substrate, the fabrication method includes:
[0015] The first metal layer and the third metal layer of the protrusion structure are crystallized.
[0016] Optionally, the anode layer includes a fourth metal layer, a fifth metal layer, and a sixth metal layer stacked together, wherein the fourth metal layer is disposed close to the substrate.
[0017] The thickness of the fifth metal layer is less than the thickness of the second metal layer.
[0018] Optionally, an anode layer is formed on the side of the planar layer opposite to the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure opposite to the substrate. The fabrication method includes:
[0019] The fourth, fifth, and sixth metal layers are etched sequentially using a wet etching process to obtain the anode pattern and the auxiliary electrode pattern.
[0020] Optionally, in the step of etching the fifth metal layer using a wet etching process, the preparation method further includes:
[0021] The second metal layer is etched back so that the orthogonal projection of the second metal layer on the substrate is within the orthogonal projection range of the first metal layer and the third metal layer on the substrate.
[0022] Optionally, the thickness of the second metal layer is greater than or equal to and less than or equal to
[0023]
[0024] Optionally, the thickness of the fifth metal layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
[0025] Optionally, the thickness of the fourth metal layer is greater than or equal to and less than or equal to
[0026] Optionally, the thickness of the planarization layer is greater than or equal to 2000 nm and less than or equal to 3500 nm.
[0027] Optionally, the materials of the first metal layer and the third metal layer include: ITO;
[0028] The materials of the second metal layer include Cu / MoNb, Al, and Mo.
[0029] Optionally, after forming an anode layer on the side of the planarized layer opposite to the substrate and forming an auxiliary electrode layer on the side of the protruding structure opposite to the substrate, the fabrication method further includes:
[0030] A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer and the auxiliary electrode layer opposite to the substrate.
[0031] The cathode layer and the auxiliary electrode layer are metal-connected.
[0032] Optionally, the protrusion structure includes a seventh metal layer and an eighth metal layer stacked together, wherein the seventh metal layer is disposed close to the substrate.
[0033] The seventh metal layer includes a first portion and a second portion that are independent of each other, wherein the orthographic projection of the first portion on the substrate covers the orthographic projection of the planarization layer on the substrate.
[0034] Optionally, the anode layer includes a ninth metal layer and a tenth metal layer stacked together, with the ninth metal layer disposed close to the substrate.
[0035] A second aspect of this application provides a display device including a display panel, the display panel being prepared by the method for preparing a display panel as provided in the first aspect of this application.
[0036] Beneficial effects:
[0037] This application provides a method for manufacturing a display panel and a display device. By forming at least one protrusion structure and a planarization layer on one side of a substrate, the orthographic projection of the protrusion structure on the substrate and the orthographic projection of the planarization layer on the substrate do not overlap. Then, an anode layer is formed on the side of the planarization layer away from the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure away from the substrate, with the anode layer and the auxiliary electrode layer disposed in the same layer. In this way, when manufacturing the display panel, the anode layer can be broken at the protrusion structure while the anode layer is being formed, and the auxiliary electrode layer can be manufactured at the same time, thereby simplifying the manufacturing steps of the auxiliary electrode layer and improving the production efficiency and product yield of the display panel. Attached Figure Description
[0038] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0039] Figure 1 This is a flowchart illustrating the steps of a method for manufacturing a display panel according to an embodiment of this application;
[0040] Figure 2 This is a schematic diagram of the structure of the substrate fabrication in a method for preparing a display panel according to an embodiment of this application.
[0041] Figure 3 This is a schematic diagram of the structure for fabricating a raised structure in a method for manufacturing a display panel according to an embodiment of this application;
[0042] Figure 4 This is a schematic diagram of the structure for completing the planarization layer fabrication in a method for manufacturing a display panel according to an embodiment of this application;
[0043] Figure 5 This is a schematic diagram of the structure for fabricating the anode layer and auxiliary electrode layer in a method for fabricating a display panel according to an embodiment of this application;
[0044] Figure 6 This is a schematic diagram of the structure for fabricating a raised structure including a seventh metal layer and an eighth metal layer in a method for manufacturing a display panel according to an embodiment of this application.
[0045] Figure 7 This is a schematic diagram of the structure of an anode layer and an auxiliary electrode layer, including a ninth metal layer and a tenth metal layer, in a method for fabricating a display panel according to an embodiment of this application.
[0046] Explanation of reference numerals in the attached figures: 11, Substrate; 111, Substrate; 112, Light-shielding layer; 113, Buffer layer; 114, Active layer; 115, Gate insulating layer; 116, Gate; 117, Interlayer dielectric layer; 118, Source / drain electrode; 119, Passivation layer; 20, Bump structure; 201, First metal layer; 202, Second metal layer; 203, Third metal layer; 204, Seventh metal layer; 2041, First portion; 2042, Second portion; 205, Eighth metal layer; 30, Planarization layer; 40, Anode layer; 401, Fourth metal layer; 402, Fifth metal layer; 403, Sixth metal layer; 404, Ninth metal layer; 405, Tenth metal layer; 50, Auxiliary electrode layer. Detailed Implementation
[0047] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0048] In related technologies, the process of fabricating a display panel generally involves first preparing a planarization layer, then etching a passivation layer to pattern it, followed by depositing a metal layer, and finally preparing the auxiliary electrode and the anode.
[0049] Because the metal structures of the auxiliary electrode and the anode are relatively complex, they require multiple deposition, masking and etching processes, which results in a slow production cycle for the display panel. The complex process also leads to a low yield rate for the display panel.
[0050] In view of this, embodiments of this application propose a method for manufacturing a display panel and a display device. By forming at least one protrusion structure and a planarization layer on one side of a substrate, the orthographic projection of the protrusion structure on the substrate and the orthographic projection of the planarization layer on the substrate do not overlap. Then, an anode layer is formed on the side of the planarization layer away from the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure away from the substrate, with the anode layer and the auxiliary electrode layer disposed in the same layer. In this way, when manufacturing the display panel, the anode layer can be broken at the protrusion structure while the anode layer is being formed, and the auxiliary electrode layer can be manufactured at the same time, thereby simplifying the manufacturing steps of the auxiliary electrode layer and improving the production efficiency and product yield of the display panel.
[0051] Figure 1 A flowchart illustrating the steps of a method for fabricating a display panel is shown. (Refer to...) Figure 1 As shown in the figure, this application embodiment provides a method for manufacturing a display panel, the method comprising:
[0052] Step 101: Provide a substrate 11.
[0053] Specifically, the substrate 11 may include a TFT (Thin Film Transistor) substrate. Referring to... Figure 2 As shown, the TFT substrate may include, from bottom to top, a substrate 111, a light-shielding layer 112, a buffer layer 113, an active layer 114, a gate insulating layer 115, a gate 116, an interlayer dielectric layer 117, and source / drain electrodes 118.
[0054] The substrate 111 may be made of glass, and its thickness may be greater than or equal to 50 μm and less than or equal to 1000 μm. For example, the thickness of the substrate 111 may be 50 μm, 100 μm, 200 μm, 500 μm, 1000 μm, etc., and those skilled in the art may select according to actual needs.
[0055] The light-shielding layer 112 is disposed on the substrate 111. The light-shielding layer 112 can be deposited by sputtering process, and the patterning of the light-shielding layer 112 is completed after photolithography and wet etching processes. Then, the photoresist on the surface of the light-shielding layer 112 is peeled off to complete the fabrication of the light-shielding layer 112.
[0056] The buffer layer 113 can be deposited using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; the material of the buffer layer 113 may include SiN. x SiO x or SiO x N y One or more of the following: the thickness of the buffer layer 113 can be greater than or equal to 150 nm and less than or equal to 500 nm; for example, the thickness of the buffer layer 113 can be 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., and those skilled in the art can select according to actual needs. The buffer layer 113 can prevent impurities on the substrate 111 from diffusing into the active layer 114.
[0057] The active layer 114 can be formed on the side of the buffer layer 113 away from the substrate 111 by sputtering process. Then, the active layer 114 is patterned by photolithography and wet etching process, and the photoresist on the surface of the active layer 114 is stripped off. The oxide of the active layer 114 may include amorphous oxides such as IGZO, ZnON, and ITZO.
[0058] The gate insulating layer 115 can be formed on the side of the active layer 114 away from the buffer layer 113 using a CVD (Chemical Vapor Deposition) process. The gate 116 can be formed on the side of the gate insulating layer 115 away from the active layer 114 using a sputtering process. The gate 116 is then patterned using photolithography and wet etching processes, while retaining the photoresist without stripping. Using the photoresist on the gate 116 as a mask, the gate insulating layer 115 is patterned using a dry etching process. The material of the gate 116 can include Al, Mo, Cr, Cu, Ti, etc. The thickness of the gate 116 can be greater than or equal to 200 nm and less than or equal to 1000 nm. For example, the thickness of the gate 116 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs.
[0059] Before fabricating the interlayer dielectric layer 117, any one of NH3, N2, or H2 can be used to conduct the exposed oxide of the active layer 114 to reduce the ohmic contact resistance with the source / drain electrodes 118. Subsequently, the interlayer dielectric layer 117 can be deposited using PECVD, and the ILD and CNT via patterns can be defined using photolithography. Contact vias between the source / drain electrodes 118 and the active layer 114 can be obtained using dry etching. The material of the interlayer dielectric layer 117 may include SiN. x or SiO x Furthermore, the interlayer dielectric layer 117 can be a single-layer membrane structure or a multi-layer membrane structure.
[0060] The source / drain electrode 118 can be formed on the side of the interlayer dielectric layer 117 opposite to the gate 116 by sputtering, and the source / drain electrode 118 can be patterned by photolithography and wet etching processes. The material of the source / drain electrode 118 can include Al, Mo, Cr, Cu, Ti, etc.; the thickness of the source / drain electrode 118 can be greater than or equal to 200 nm and less than or equal to 1000 nm. For example, the thickness of the source / drain electrode 118 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs.
[0061] Step 102: Form at least one protrusion structure 20 on one side of the substrate 11.
[0062] Specifically, refer to Figure 3As shown, the protrusion structure 20 can be deposited using a sputtering process. The protrusion structure 20 may include a first metal layer 201, a second metal layer 202, and a third metal layer 203 stacked together. The materials of the first metal layer 201 and the third metal layer 203 may include ITO (indium tin oxide), and the material of the second metal layer 202 may include Cu / MoNb, Al, Mo, etc. After deposition, the protrusion structure 20 needs to be patterned using a photolithography process and a three-step wet etching process performed in the order of the first metal layer 201, the second metal layer 202, and the third metal layer 203.
[0063] Furthermore, since the protrusion structure 20 corresponds to the auxiliary electrode, multiple protrusion structures 20 are generally required to be formed on the substrate 11, with each protrusion structure 20 corresponding to a single auxiliary electrode.
[0064] In this embodiment, the protrusion structure 20 has an ITO / Cu / MoNb / ITO structure; in other embodiments, the protrusion structure 20 may also have an ITO / MoNb / Cu / ITO structure.
[0065] Step 103: A planarization layer 30 is formed on one side of the substrate 11, wherein the orthographic projection of the planarization layer 30 on the substrate 11 does not overlap with the orthographic projection of the protrusion structure 20 on the substrate 11.
[0066] Specifically, refer to Figure 4 As shown, the planarization layer 30 can be formed on one side of the substrate 11 by a blade coating process. After pre-baking, exposure, and development to expose the cured pixel area pattern, and then post-baking at 230 degrees Celsius to remove water and organic solvents, the planarization layer 30 is completed. The material of the planarization layer 30 may include resin. The thickness of the planarization layer 30 can be greater than or equal to 2000 nm and less than or equal to 3500 nm. For example, the thickness of the planarization layer 30 can be 2000 nm, 2500 nm, 3000 nm, 3500 nm, etc., and those skilled in the art can select according to actual needs.
[0067] During the post-baking process of the planarization layer 30, the first metal layer 201 and the third metal layer 203 of the protrusion structure 20 can be crystallized, thereby preventing corrosion of the first metal layer 201 and the third metal layer 203 during the etching of the anode layer 40.
[0068] Step 104: An anode layer 40 is formed on the side of the planar layer 30 away from the substrate 11, and an auxiliary electrode layer 50 is formed on the side of the protrusion structure 20 away from the substrate 11; wherein the orthographic projection of the anode layer 40 on the substrate 11 and the orthographic projection of the auxiliary electrode layer 50 on the substrate 11 do not overlap, and the anode layer 40 and the auxiliary electrode layer 50 are disposed in the same layer.
[0069] Specifically, refer to Figure 5 As shown, the anode layer 40 and the auxiliary electrode layer 50 can be formed by sputtering. The anode layer 40 may include a fourth metal layer 401, a fifth metal layer 402, and a sixth metal layer 403 stacked together. The materials of the fourth metal layer 401 and the sixth metal layer 403 may include ITO (indium tin oxide), and the materials of the fifth metal layer 402 may include MoCu / MoNb, Al, Mo, Cr, Cu, Ti, etc. Since the anode layer 40 and the auxiliary electrode layer 50 are disposed in the same layer, that is, the anode layer 40 and the auxiliary electrode layer 50 are prepared in the same step using the same materials and the same process, the auxiliary electrode layer 50 also includes the fourth metal layer 401, the fifth metal layer 402, and the sixth metal layer 403.
[0070] Furthermore, after the deposition of the anode layer 40 and the auxiliary electrode layer 50 is completed, the anode pattern and the overlap pattern of the auxiliary electrode need to be completed by a photolithography process and a three-step wet etching process in the order of the fourth metal layer 401, the fifth metal layer 402 and the sixth metal layer 403. The overlap pattern of the auxiliary electrode includes a single protrusion structure 20 and an auxiliary electrode layer 50 covering the protrusion structure 20 and connected to the protrusion structure 20.
[0071] In the protrusion structure 20, the thickness of the second metal layer 202 can be greater than or equal to the thickness of the metal layer 202. and less than or equal to This allows the protrusion 20 to cut through the anode layer 40 during its formation (i.e., the anode layer 40 breaks at the protrusion 20, thus allowing the anode layer 40 covering the protrusion 20 to function as an auxiliary electrode layer 50), preventing the anode layer 40 from completely covering the protrusion 20. Consequently, the auxiliary electrode layer 50 can then assist in conductivity. For example, the thickness of the second metal layer 202 can be... Etc., those skilled in the art can choose according to actual needs.
[0072] The preparation method described in this application embodiment completes the preparation of the anode and auxiliary electrode in one step, thereby simplifying the preparation steps of the auxiliary electrode and improving the production efficiency and product yield of the display panel.
[0073] Furthermore, in related technologies, the metal layer deposited in the previous step needs to be annealed before the auxiliary electrode and anode are prepared. In this process, if the metal of the auxiliary electrode is directly deposited on the annealed metal layer, bulging defects are likely to occur. However, in the embodiments of this application, the fifth metal layer 402 is deposited on the fourth metal layer 401 that has not undergone the annealing process, so bulging defects will not occur.
[0074] Simultaneously, by utilizing the post-baking process of the planarization layer 30 to complete the crystallization of the first metal layer 201 and the third metal layer 203 in the protrusion structure 20, it is possible to avoid reverse etching of the second metal layer 202 during the formation of the protrusion structure 20. In this embodiment, the second metal layer 202 of the protrusion structure 20 can be reverse-etched during the etching of the fifth metal layer 402, thereby transforming the protrusion structure 20 into an I-shaped structure, so that the orthogonal projection of the second metal layer 202 on the substrate 11 is located within the orthogonal projection range of the first metal layer 201 and the third metal layer 203 on the substrate 11.
[0075] In this embodiment, the thickness of the fifth metal layer 402 is greater than or equal to 200 nm and less than or equal to 1000 nm. Exemplarily, the thickness of the fifth metal layer 402 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs. By reducing the thickness of the fifth metal layer 402, when the material of the fifth metal layer 402 is Cu / MoNb, the dark spots caused during Cu deposition can be reduced.
[0076] In this embodiment, the thickness of the fourth metal layer 401 can be greater than or equal to... and less than or equal to For example, the thickness of the fourth metal layer 401 can be Those skilled in the art can make selections based on actual needs. Reducing the thickness of the fourth metal layer 401 can decrease etching time.
[0077] Meanwhile, in this embodiment of the application, before the step of forming at least one protrusion structure 20 on one side of the substrate 11, the fabrication method further includes:
[0078] A passivation layer 119 is formed on one side of the substrate 11, and the passivation layer 119 covers the substrate 11.
[0079] Furthermore, prior to the step of forming the anode layer 40 on the side of the planarization layer 30 opposite to the passivation layer 119, the fabrication method further includes:
[0080] The passivation layer 119 is patterned using an etching process.
[0081] Specifically, the passivation layer 119 can be deposited using a CVD process, and the material of the passivation layer 119 may include SiN. x SiO x or SiO x N y Etc. The patterning of the passivation layer 119 can be accomplished through photolithography and etching processes. By etching the passivation layer 119, the anode layer 40 can be connected to the source and drain electrodes 118, and because the thickness of the fourth metal layer 401 is reduced, the etching time of the fourth metal layer 401 is reduced, which can improve the metal corrosion in the holes of the passivation layer 119.
[0082] In an optional embodiment, after forming an anode layer 40 on the side of the planarization layer 30 opposite to the substrate 11 and forming an auxiliary electrode layer 50 on the side of the protrusion structure 20 opposite to the substrate 11, the fabrication method further includes:
[0083] Step 105: A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer 40 and the auxiliary electrode layer 50 away from the substrate 11, wherein the cathode layer is metal-connected to the auxiliary electrode layer 50.
[0084] Specifically, the light-emitting layer may include a hole injection layer, a hole transport layer, a light-emitting material layer and an electron transport layer stacked sequentially from bottom to top, wherein the hole injection layer is disposed close to the substrate 11.
[0085] The hole injection layer can be a material that facilitates control of the hole injection rate, such as CuPc; the hole transport layer can be a material with high thermal stability that is conducive to hole transport, such as NPB (N,N′-(1-naphthyl)-N,N′-diphenyl-4,4′-biphenyldiamine); the luminescent material layer can be a material with high luminous efficiency, such as Alq3; and the electron transport layer can be a material with high thermal stability that is conducive to electron transport, such as PBD (2-(4-biphenyl)-5-(4-tert-butyl)phenyl-1,3,4-oxadiazole).
[0086] Driven by external forces, electrons pass through the electron transport layer from the cathode layer to the luminescent material layer, and holes pass through the hole injection layer and hole transport layer from the anode layer 40 to the luminescent material layer. Electrons and holes interact in the luminescent material layer to emit light. The light passes through the electron transport layer and enters the cathode layer, and is emitted from the luminescent area of the cathode layer.
[0087] In addition, a pixel definition layer may be included between the light-emitting layer and the anode layer 40. The pixel definition layer can define multiple light-emitting areas and non-light-emitting areas on the substrate 11, wherein the position of the anode corresponds to the position of the light-emitting area, and the position of the auxiliary electrode corresponds to the position of the non-light-emitting area, thereby avoiding the auxiliary electrode from affecting the light-emitting effect of the product.
[0088] In an optional embodiment, this application also provides a method for manufacturing a display panel, wherein, in the manufacturing method, reference is made to... Figure 6 As shown, the protrusion structure 20 includes a seventh metal layer 204 and an eighth metal layer 205 stacked together, with the seventh metal layer 204 disposed close to the substrate 11.
[0089] Specifically, in this preparation method, the preparation of the planarization layer 30 precedes the preparation of the protrusion structure 20. Therefore, the seventh metal layer 204 will cover the planarization layer 30. At this time, the seventh metal layer 204 can be used as the bottom metal layer in the anode layer 40.
[0090] Furthermore, referring to Figure 6 As shown, the seventh metal layer 204 includes a first portion 2041 and a second portion 2042 that are independent of each other; that is, the positions of the first portion 2041 and the second portion 2042 in the display panel are independent of each other. The orthographic projection of the first portion 2041 onto the substrate 11 overlaps the orthographic projection of the planarization layer 30 onto the substrate 11. Thus, during the subsequent formation of the anode layer 40, the first portion 2041 of the seventh metal layer 204 can serve as the bottom metal layer of the anode layer 40. In a specific implementation, the first portion 2041 and the second portion 2042 can be formed using a halftone mask through a single photolithography process.
[0091] The material of the seventh metal layer 204 may include ITO, and the material of the eighth metal layer 205 may include Cu / MoNb, Al, Mo, etc.
[0092] At the same time, refer to Figure 7 As shown, in this embodiment, the anode layer 40 includes a ninth metal layer 404 and a tenth metal layer 405 stacked together. The material of the ninth metal layer 404 may include MoCu / MoNb, Al, Mo, Cr, Cu, Ti, etc., and the material of the tenth metal layer 405 may include ITO. Since the anode layer 40 and the auxiliary electrode layer 50 are disposed in the same layer, the auxiliary electrode layer 50 also includes a ninth metal layer 404 and a tenth metal layer 405.
[0093] Specifically, the anode layer 40 is formed on the side of the first portion 2041 of the seventh metal layer 204 facing away from the substrate 11, while the auxiliary electrode layer 50 is formed on the side of the eighth metal layer 205 facing away from the substrate 11. In this way, the first portion 2041 of the seventh metal layer 204, the ninth metal layer 404, and the tenth metal layer 405 can form a complete anode, while the second portion 2042 of the seventh metal layer 204, the eighth metal layer 205, the ninth metal layer 404, and the tenth metal layer 405 can form a complete auxiliary electrode.
[0094] The preparation method described in this application also enables the anode and auxiliary electrode to be prepared in one step, thereby simplifying the preparation steps of the auxiliary electrode and improving the production efficiency and product yield of the display panel.
[0095] Meanwhile, the above preparation method reduces the film layer at the passivation layer 119 holes, thereby preventing metal corrosion of the source drain electrode 118 inside the passivation layer 119 holes caused by multiple wet etching processes.
[0096] Based on the same inventive concept, embodiments of this application also disclose a display device, including a display panel, which is prepared by the display panel preparation method described above in this application.
[0097] Specifically, the display device can be a computer monitor, television, billboard, laser printer with display function, telephone, mobile phone, personal digital assistant (PDA), laptop computer, digital camera, portable camcorder, viewfinder, vehicle, large wall area, theater screen or stadium sign, etc.
[0098] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0099] It should also be noted that, in this document, the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements, but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. In the absence of further restrictions, an element defined by the phrase "includes a..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes the element.
[0100] The technical solutions provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand this application, and the content of this specification should not be construed as a limitation of this application. Furthermore, for those skilled in the art, there will be different forms of changes in the specific implementation methods and application scope based on this application. It is neither necessary nor possible to exhaustively list all implementation methods here, and obvious changes or modifications derived therefrom are still within the protection scope of this application.
Claims
1. A method for manufacturing a display panel, characterized in that, The preparation method includes: Provide substrates; At least one protrusion structure is formed on one side of the substrate; wherein the protrusion structure is made of a metallic material; A planarization layer is formed on one side of the substrate, wherein the orthographic projection of the planarization layer on the substrate does not overlap with the orthographic projection of the protrusion structure on the substrate; wherein the planarization layer is a resin material; An anode layer is formed on the side of the planar layer opposite to the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure opposite to the substrate. Wherein, the orthographic projection of the anode layer on the substrate does not overlap with the orthographic projection of the auxiliary electrode layer on the substrate, and the anode layer and the auxiliary electrode layer are disposed in the same layer.
2. The method for manufacturing a display panel according to claim 1, characterized in that: The protrusion structure includes a first metal layer, a second metal layer and a third metal layer stacked together, wherein the first metal layer is disposed close to the substrate. Wherein, the orthogonal projection of the second metal layer on the substrate is located within the orthogonal projection range of the first metal layer and the third metal layer on the substrate.
3. The method for manufacturing a display panel according to claim 2, characterized in that, The step of forming a planarization layer on one side of the substrate, the preparation method includes: The first metal layer and the third metal layer of the protrusion structure are crystallized.
4. The method for manufacturing a display panel according to claim 2, characterized in that: The anode layer includes a fourth metal layer, a fifth metal layer and a sixth metal layer stacked together, with the fourth metal layer disposed close to the substrate. The thickness of the fifth metal layer is less than the thickness of the second metal layer.
5. The method for manufacturing a display panel according to claim 4, characterized in that, An anode layer is formed on the side of the planar layer opposite to the substrate, and an auxiliary electrode layer is formed on the side of the protrusion structure opposite to the substrate. The fabrication method includes: The fourth, fifth, and sixth metal layers are etched sequentially using a wet etching process to obtain the anode pattern and the auxiliary electrode pattern.
6. The method for manufacturing a display panel according to claim 5, characterized in that, The preparation method further includes the step of etching the fifth metal layer using a wet etching process: The second metal layer is etched back so that the orthogonal projection of the second metal layer on the substrate is within the orthogonal projection range of the first metal layer and the third metal layer on the substrate.
7. The method for manufacturing a display panel according to claim 2, characterized in that: The thickness of the second metal layer is greater than or equal to 6000 Å and less than or equal to 8000 Å.
8. The method for manufacturing a display panel according to claim 4, characterized in that: The thickness of the fifth metal layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
9. The method for manufacturing a display panel according to claim 4, characterized in that: The thickness of the fourth metal layer is greater than or equal to 300 Å and less than or equal to 700 Å.
10. The method for manufacturing a display panel according to any one of claims 1-9, characterized in that: The thickness of the planarization layer is greater than or equal to 2000 nm and less than or equal to 3500 nm.
11. The method for manufacturing a display panel according to any one of claims 2-9, characterized in that: The materials of the first metal layer and the third metal layer include: ITO; The materials of the second metal layer include Cu / MoNb, Al, and Mo.
12. The method for manufacturing a display panel according to any one of claims 1-9, characterized in that, After forming an anode layer on the side of the planarized layer opposite to the substrate and forming an auxiliary electrode layer on the side of the protruding structure opposite to the substrate, the fabrication method further includes: A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer and the auxiliary electrode layer opposite to the substrate. The cathode layer and the auxiliary electrode layer are metal-connected.
13. The method for manufacturing a display panel according to claim 1, characterized in that: The protrusion structure includes a seventh metal layer and an eighth metal layer stacked together, with the seventh metal layer disposed close to the substrate. The seventh metal layer includes a first portion and a second portion that are independent of each other, wherein the orthographic projection of the first portion on the substrate covers the orthographic projection of the planarization layer on the substrate.
14. The method for manufacturing a display panel according to claim 13, characterized in that: The anode layer includes a ninth metal layer and a tenth metal layer stacked together, with the ninth metal layer disposed close to the substrate.
15. A display device, characterized in that, Includes a display panel, which is prepared by the method for preparing a display panel as described in any one of claims 1-14.