Reflectivity measuring device, film forming device

Abstract

The present invention relates to a reflectance measuring device and a film forming device. It is used to prevent the measurement accuracy of reflectance from decreasing. The reflectance measuring device comprises: a light source; a light projecting and receiving head, the light projecting and receiving head comprising a light projecting unit, a reflected light input unit and a correction light input unit, the light projecting unit irradiates the object to be measured with the first light of the first light and the second light included in the light from the light source input into the light projecting and receiving head, the reflected light input unit inputs the reflected light after the first light is reflected by the object to be measured into the first wire, and the correction light input unit inputs the second light into the second wire without irradiating the object to be measured; a measuring component, the measuring component measures the intensity of the third light transmitted via the first wire and the intensity of the fourth light transmitted via the second wire; and a determining component, the determining component determines the reflectance of the object to be measured based on the intensity of the third light and the intensity of the fourth light measured by the measuring component.

Description

Technical Field

[0001] The present invention relates to a reflectivity measuring device and a film forming device for measuring the film thickness of an organic material vapor-deposited on a glass substrate. Background Art

[0002] Patent Document 1 discloses a film thickness measuring device for measuring a semiconductor film formed on a substrate. Patent Document 1 discloses that measurement is performed using light emitted from a measurement light source as a reference.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-063321 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, there is a problem that the measurement accuracy of the reflectivity is reduced due to changes in the loss of the transmitted light due to bending of the optical fiber between the measurement light source and the spectroscopic detection unit.

[0008] In view of the above problems, an object of the present invention is to provide a technology for preventing a decrease in the measurement accuracy of reflectivity.

[0009] Solutions to Solve Problems

[0010] In order to solve the above problems, the reflectivity measuring device of the present invention comprises:

[0011] light source;

[0012] a light projecting and receiving head, the light projecting and receiving head comprising a light projecting unit, a reflected light input unit and a corrected light input unit, the light projecting unit irradiating the first light of the first light and the second light included in the light from the light source input into the light projecting and receiving head to the object to be measured, the reflected light input unit inputting the reflected light after the first light is reflected by the object to be measured to the first wire, and the corrected light input unit inputting the second light to the second wire without irradiating the object to be measured;

[0013] a measuring member that measures the intensity of the third light transmitted through the first wire and the intensity of the fourth light transmitted through the second wire; and

[0014] A determining means determines the reflectance of the object to be measured based on the intensity of the third light and the intensity of the fourth light measured by the measuring means.

[0015] According to another aspect of the present invention, the film forming apparatus of the present invention includes:

[0016] A film forming chamber, wherein the film forming chamber is provided with a film forming unit for forming a film on a substrate;

[0017] a conveying member that conveys the substrate between a film forming position of the substrate and a receiving position of the substrate while holding the substrate at a lower side; and

[0018] a reflectivity measuring device for measuring the reflectivity of a film formed on a substrate held by a conveying member,

[0019] The reflectivity measuring device comprises:

[0020] light source;

[0021] a light projecting and receiving head, the light projecting and receiving head comprising a light projecting unit, a reflected light input unit and a corrected light input unit, the light projecting unit irradiating the first light of the first light and the second light included in the light from the light source input into the light projecting and receiving head to the object to be measured, the reflected light input unit inputting the reflected light after the first light is reflected by the object to be measured to the first wire, and the corrected light input unit inputting the second light to the second wire without irradiating the object to be measured;

[0022] a measuring member that measures the intensity of the third light transmitted through the first wire and the intensity of the fourth light transmitted through the second wire; and

[0023] A determining means determines the reflectance of the object to be measured based on the intensity of the third light and the intensity of the fourth light measured by the measuring means.

[0024] Effects of the Invention

[0025] This makes it possible to provide a technique for preventing a decrease in the measurement accuracy of the reflectivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a layout diagram of a film forming system according to one embodiment of the present invention.

[0027] Figure 2 (A) and (B) are a top view and a side view of the conveying unit.

[0028] Figure 3 yes Figure 2 (A) and Figure 2 (B) A perspective view of the hand of the transport unit.

[0029] Figure 4 (A) and (B) are explanatory diagrams of the deflection of the substrate and the function of the support member.

[0030] Figure 5This is an explanatory diagram of the transport unit in the transfer chamber.

[0031] Figure 6 yes Figure 5 A cross-sectional view of a conveying unit.

[0032] Figure 7 (A) and (B) are explanatory diagrams of the transfer operation of the substrate.

[0033] Figure 8 (A) and (B) are explanatory diagrams of the transfer operation of the substrate.

[0034] Fig. 9 (A) and (B) are explanatory diagrams of the transfer operation of the substrate.

[0035] Fig.10 (A) and (B) are explanatory diagrams of the transfer operation of the substrate.

[0036] Fig.11 (A) to (F) are diagrams for explaining the movement of the vapor deposition source.

[0037] Fig.12 (A) and (B) are explanatory diagrams of the transport operation of the mask to the mask stage.

[0038] Fig.13 (A) and (B) are explanatory diagrams of the transport operation of the mask to the mask stage.

[0039] Fig.14 (A) and (B) are explanatory diagrams of the conveying operation and the alignment operation of the substrate.

[0040] Fig.15 (A) and (B) are explanatory diagrams of a film forming operation on a substrate.

[0041] Fig.16 (A) to (C) are explanatory diagrams showing an operation example of the entire film forming apparatus.

[0042] Fig.17 (A) to (C) are explanatory diagrams showing an operation example of the entire film forming apparatus.

[0043] Fig.18 (A) to (C) are explanatory diagrams showing an operation example of the entire film forming apparatus.

[0044] Fig.19 (A) to (C) are explanatory diagrams showing an operation example of the entire film forming apparatus.

[0045] Fig. 20 (A) to (D) are explanatory diagrams showing an operation example of the entire film forming apparatus.

[0046] Fig.21(A) to (C) are explanatory diagrams of another vapor deposition source and its moving unit.

[0047] Fig. 22 (A) and (B) are explanatory diagrams of the alignment unit.

[0048] Fig.23 (A) to (D) are explanatory diagrams of another structural example of the film forming apparatus.

[0049] Fig.24 It is an explanatory diagram of another structural example of the holding unit.

[0050] Fig.25 (A) is an overall view of an organic EL display device, and (B) is a view showing a cross-sectional structure of one pixel.

[0051] Fig.26 It is an explanatory diagram showing an example of the arrangement of a film thickness measuring device.

[0052] Fig. 27 It is a cross-sectional view of the film thickness measuring device in each configuration example.

[0053] Fig.28 (A) to (C) are explanatory diagrams showing the measurement principle of the film thickness measurement device.

[0054] Fig.29 (A) to (C) are explanatory diagrams showing configuration examples of a film thickness measuring device.

[0055] Fig.30 It is an explanatory diagram showing an example of change in reflectance of a substrate before and after film formation.

[0056] Fig.31 It is an explanatory diagram showing a structural example of a top plate of a film forming apparatus.

[0057] Fig.32 It is an explanatory diagram showing a substrate and a substrate carrier.

[0058] Fig.33 It is an explanatory diagram showing the structure of an optical fiber connector.

[0059] Fig.34 It is an explanatory diagram showing a configuration example of a film thickness measuring device.

[0060] Fig.35 (A) and (B) are explanatory diagrams showing configuration examples of the light projecting and receiving unit.

[0061] Fig.36 (A) to (C) are explanatory diagrams showing the measurement principle of the film thickness measurement device.

[0062] Fig.37 It is an explanatory diagram showing a configuration example of a film thickness measuring device.

[0063] Description of Reference Numerals

[0064] 1 film forming device, 3 film forming chamber, 4 transport unit, 5A and 5B transport units, 6A to 6D holding units, 7A and 7B moving units DETAILED DESCRIPTION

[0065] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. A plurality of features are described in the embodiments, but all of these plurality of features are not limited to the features necessary for the invention, and a plurality of features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are marked for the same or similar structures, and repeated descriptions are omitted.

[0066] <System Overview>

[0067] Figure 1 : is a layout diagram of the film forming system 1. In each figure, arrow Z indicates the up-down direction (gravity direction), arrow X and arrow Y indicate mutually orthogonal horizontal directions, and arrow θ indicates the rotation direction around the Z axis.

[0068] The film forming system 1 is a structure in which an intermediate conveying device 101, a film forming device 1, and an intermediate conveying device 102 are arranged in the X direction, and the substrate W is conveyed and processed in this order. The intermediate conveying device 101 is located on the upstream side in the conveying direction of the substrate W, and the intermediate conveying device 102 is located on the downstream side in the conveying direction of the substrate W. In the example shown in the figure, the film forming system 1 includes one film forming device 1, but the film forming device 1 can also be set on the upstream side of the intermediate conveying device 101 or the downstream side of the intermediate conveying device 102. The control device 103 includes a processor such as a CPU, a storage device such as a semiconductor memory and a hard disk, and an input / output interface, and controls the film forming system 1.

[0069] The intermediate conveying devices 101 and 102 are provided with a conveying robot 110. The conveying robot 110 is a two-arm type robot that supports two groups of arms 110b and a hand 110c on a base portion 110a. The two groups of arms 110b and the hand 110c rotate along the θ direction on the base portion 110a and are retractable. A storage container 104 for accommodating a mask M is provided adjacent to the intermediate conveying devices 101 and 102. In addition to conveying a substrate W, the conveying robot 110 also conveys a mask M. The hand 110c has a fork shape, and the substrate W and the mask M are placed on the hand 110c and conveyed.

[0070] The film forming device 1 is a device that performs film forming processing on a substrate W sent from an intermediate conveying device 101 and sends it out from an intermediate conveying device 102. The film forming device 1 includes a delivery chamber 2 for delivering the substrate W and a plurality of film forming chambers 3 arranged adjacent to the delivery chamber 2. In the present embodiment, two film forming chambers 3 are provided, one each on both sides of the Y direction of the delivery chamber 2. The delivery chamber 2 and the film forming chamber 3 are surrounded by walls 20 and 30, respectively, so as to maintain airtightness.

[0071] In the film forming chamber, a film of a vapor-deposited substance is formed on a substrate W. A mask M can be used to form a thin film of a vapor-deposited substance of a prescribed pattern on the substrate W. The material of the substrate W can be appropriately selected from materials such as glass, resin, and metal, and a material in which a resin layer such as polyimide is formed on glass is typically used. In the case of the present embodiment, the substrate W is rectangular. The vapor-deposited substance includes organic materials, inorganic materials (metals, metal oxides, etc.), and the like. The film forming device 1 can be applied to manufacturing devices for manufacturing electronic devices, optical components, and the like, such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and in particular, can be applied to manufacturing devices for manufacturing organic EL panels.

[0072] <Handover Room>

[0073] The delivery chamber 2 delivers substrates W and masks M between the intermediate transport devices 101 and 102 and the film forming apparatus 1 and also distributes substrates W and masks M to the film forming chambers 3. Therefore, the delivery chamber 2 may also be called a sorting chamber.

[0074] <Multi-directional conveying unit>

[0075] The delivery chamber 2 is provided with a transport unit 4 for transporting substrates W and masks M. The transport unit 4 receives substrates W or masks M from the intermediate transport device 101 and delivers them to the holding units 6A to 6D. In addition, the transport unit 4 delivers the substrates W or masks M received from the holding units 6A to 6D to the intermediate transport device 102. Figure 2 (A) and Figure 2 (B) is a top view and a side view of the transport unit 4.

[0076] The conveying unit 4 of this embodiment is a horizontal multi-joint robot capable of moving a substrate W or the like in multiple directions on an XY plane, and includes a cylindrical base 40, an arm 41 supported on the base 40, and a hand 44 supported on the arm 41. The base 40 includes a drive shaft 40a, and performs rotation of the arm 41 around the Z1 axis based on the rotation of the drive shaft 40a in the θ direction and lifting and lowering of the arm 41 based on the up and down movement of the drive shaft 40a. The arm 41 includes arm members 42 and 43. One end of the arm member 42 is connected to the drive shaft 40a, and the other end is connected to one end of the arm member 43. The arm member 43 is connected to the arm member 42 in a manner that allows rotation around the Z2 axis. The hand 44 is connected to the other end of the arm member 43 in a manner that allows free rotation around the Z3 axis.

[0077] Apart from Figure 2 (A) and Figure 2 (B) In addition, refer to Figure 3 . Figure 3 4 is a three-dimensional view of the hand 44. The hand 44 includes a plate-shaped hand body 45 and a plurality of support members 46 to 48 that are vertically arranged on the hand body 45 and support the substrate W. The support members 46 to 48 are roughly divided into a support member 46 located in the center of the hand body 45 and support members 47 and 48 located in the peripheral portion. The substrate W is placed on the plurality of support members 46 to 48. When the substrate W is supported by the hand 44, the support member 46 is located in the center of the substrate W, and the support members 47 and 48 are located in the peripheral portion of the substrate W.

[0078] The support member 46 includes a pin 46a and an elastic member 46b provided at the front end thereof. The support member 47 includes a pin 47a, a mounting portion 47b provided at the front end thereof, and an elastic member 47c provided on the upper surface of the mounting portion 47b and located at the front end of the support member 47. The support member 48 includes a plurality of pins 48a, a mounting portion 48b provided at the front ends of the plurality of pins 48a, and a plurality of elastic members 48c provided on the upper surface of the mounting portion 48b and located at the front end of the support member 48.

[0079] By supporting the substrate W with such support members 46 to 48, the substrate W can be supported with a small area, and friction etc. on the surface of the substrate W can be prevented. In addition, the elastic members 46b, 47c and 48c are portions in contact with the substrate W, and are made of, for example, resin. By making the elastic members 46b, 47c and 48c in contact with the substrate W, friction etc. on the surface of the substrate W can be prevented more reliably.

[0080] like Figure 2 As shown in (B), the relationship between the height H1 of the support member 46 from the hand body 45 and the height H2 of the support members 47 and 48 is H1>H2. This can prevent the center portion of the substrate W from sagging. Figure 4 (A) and Figure 4 (B) is an explanatory diagram thereof, illustrating a state in which the holding unit 6A receives the substrate W from the hand 44 .

[0081] As described later, in the present embodiment, the holding units 6A to 6D use electrostatic force to hold the substrate W. When the holding units 6A to 6D receive the substrate W, if its flatness is low, the suction force is reduced, and the film formation accuracy is also reduced during film formation. Figure 4 (A) As a comparative example, it is assumed that the hand 44 does not include the support member 46, and the substrate W is supported by the support member 47 (and the support member 48). For a large substrate W, the central portion thereof bends and droops due to its own weight. If the holding unit 6A adsorbs the substrate W in this state, a gap may be generated between the central portion of the substrate W and the lower surface (holding surface) of the holding unit 6A, resulting in a reduction in the adsorption force.

[0082] On the other hand, Figure 4 In the present embodiment shown in (B), the height H1 of the support member 46 and the height H2 of the support members 47 and 48 are in the relationship of H1>H2, whereby the central portion of the substrate W is supported by the support member 46, and the central portion of the substrate W is slightly raised. Even for a large substrate W, the central portion thereof can be prevented from bending and sagging due to its own weight, and it is better to say that the central portion of the substrate W contacts the holding unit 6A before the peripheral portion. As a result, the adsorption extends from the central portion of the substrate W to the peripheral portion, and the entire substrate W is held by the holding unit 6A without a gap.

[0083] <Sliding conveyor unit>

[0084] like Figure 1 As shown, the film forming apparatus 1 includes two sets of conveying units 5A and 5B arranged from the delivery chamber 2 to the two film forming chambers 3. The conveying unit 5A includes holding units 6A and 6C, and a moving unit 7A that independently moves them in parallel in the Y direction. The conveying unit 5B has the same structure as the conveying unit 5A, and includes holding units 6B and 6D, and a moving unit 7B that independently moves them in parallel in the Y direction.

[0085] Figure 5 The portion of the transport units 5A and 5B disposed in the transfer chamber 2 is shown. Figure 6 The figure shows a cross-sectional view of the conveying unit 5A (moving unit 7A and holding unit 6A). The conveying units 5A and 5B are units that allow the holding units 6A to 6D to independently reciprocate in the Y direction in a horizontal posture at a position higher than the conveying unit 4, and are arranged side by side in the X direction. It should be noted that Figure 6Although the structure of the transport unit 5A (moving unit 7A and holding unit 6A) is shown as a representative, the holding units 6A to 6D have the same structure, and the moving units 7A and 7B also have the same structure.

[0086] The moving units 7A and 7B of this embodiment are mechanisms for moving the holding units 6A to 6D using magnetic force, and in particular, mechanisms for floating movement using magnetic force. The moving units 7A and 7B are each provided with a pair of guide members 70 that define the moving track of the holding units 6A to 6D in the Y direction. Each guide member 70 has a C-shaped cross section and is a track member extending in the Y direction. The pair of guide members 70 are separated from each other in the X direction.

[0087] Each guide member 70 includes a plurality of pairs of magnetic elements 71 separated in the Z direction. The plurality of pairs of magnetic elements 71 are arranged at equal intervals in the Y direction. At least one of the pair of magnetic elements 71 is an electromagnet, and the other is an electromagnet or a permanent magnet.

[0088] The holding units 6A to 6D are carriers for conveying substrates W and masks M. The holding units 6A to 6D each include a main body part 60 that is rectangular when viewed from above. Each end of the main body part 60 in the X direction is inserted into a corresponding guide part 70. Permanent magnets 61 provided with yokes not shown are fixed to the upper and lower surfaces of each end of the main body part 60 in the X direction. A plurality of upper and lower permanent magnets 61 are provided on the main body part 60 along the Y direction. The permanent magnet 61 faces the magnetic element 71 of the guide part 70. The repulsive force between the permanent magnet 61 and the magnetic element 71 can generate a floating force in the holding units 6A to 6D. By sequentially switching the magnetic element 71 that generates a magnetic force among the plurality of magnetic elements (electromagnets) 71 provided along the Y direction, the attractive force between the permanent magnet 61 and the magnetic element 71 can be used to generate a moving force in the Y direction in the holding units 6A to 6D.

[0089] It should be noted that in the present embodiment, the moving units 7A and 7B are configured as magnetic levitation conveying mechanisms, but other conveying mechanisms capable of moving the holding units 6A to 6D, such as a roller conveying mechanism, a belt conveying mechanism, or a rack-and-pinion mechanism, may also be used.

[0090] A scale 72 extending in the Y direction is disposed on the guide member 70, and a sensor 64 for reading the scale 72 is disposed on the main body member 60. Based on the detection result of the sensor 64, the position of each holding unit 6A to 6D in the Y direction can be determined.

[0091] The holding units 6A to 6D each include a holding portion 62 for holding a substrate W. In the present embodiment, the holding portion 62 is an electrostatic chuck that attracts the substrate W by electrostatic force, and the holding portion 62 includes a plurality of electrodes 62a disposed on the lower surface of the holding units 6A to 6D. The holding units 6A to 6D each include a holding portion 63 for holding a mask M. The holding portion 63 is, for example, a magnetic chuck that attracts the mask M by magnetic force, and is located outside the holding portion 62 in the X direction. The holding portion 63 may also be a clamping mechanism that mechanically clamps the mask M.

[0092] <Substrate Receiving Action>

[0093] The substrate W and the mask M transported from the transport unit 4 are received by the holding units 6A to 6D at predetermined positions in the delivery chamber 2 . Figure 5 Indicates the state where the holding units 6A to 6D are located at the receiving positions PA to PD. The receiving positions PA to PD are arranged in a matrix (2×2) in the XY plane and are set outside the film forming chamber 3, that is, inside the delivery chamber 2. Since there are four different receiving positions PA to PD, these receiving positions PA to PD can also be used as a buffer for stopping the substrate W when a system failure occurs on the downstream side.

[0094] Figure 7 (A)~ Figure 8 (B) shows an example of the receiving operation of the holding unit 6B at the receiving position PB, in which the substrate W is received from the transport unit 4 . Figure 7 (A) shows a state where the transport unit 4 receives the substrate W from the intermediate transport device 101. The substrate W is placed on the hand 44. In other words, the substrate W is supported from the lower side by the hand 44. The holding unit 6B is moved to the receiving position PB by the moving unit 7B. Figure 7 (B) shows a state where the hand 44 is moved to the lower side of the holding unit 6B by the movement of the arm 41 of the conveying unit 4. Figure 7 (B) state, relative to Figure 7 (A), the hand 44 is rotated 90 degrees in the θ direction. Therefore, the substrate W is in a posture ( Figure 7 (A)) changes to a posture facing the Y direction ( Figure 7 (B)).

[0095] exist Figure 7 In the stage (B), the holding unit 6B is aligned with the substrate W. A camera 21 for alignment is provided in the delivery chamber 2. The relative position of the holding unit 6B and the substrate W is determined based on the image captured by the camera 21, and the position of the substrate W in the X direction, the Y direction, and the θ direction is adjusted by the conveying unit 4.

[0096] Figure 8 (A) shows a state where the arm 41 of the transport unit 4 is raised to bring the substrate W into contact with the holding portion 62 of the holding unit 6B. The substrate W is held on the holding portion 62 by the electrostatic force of the holding portion 62. Thus, in this embodiment, the substrate W is transferred from the transport unit 4 to the holding unit 6B from bottom to top. Figure 8 (B) shows a state where the arm 41 of the transfer unit 4 is lowered and the reception of the substrate W by the holding unit 6B is completed.

[0097] The same also applies to the transfer of substrates W between the conveying unit 4 and other holding units 6A, 6C, and 6D. Fig. 9 (A)~ Fig.10 (B) shows an example of the receiving operation of the holding unit 6A at the receiving position PA, in which the substrate W is received from the transfer unit 4 . Fig. 9 (A) shows a state where the transport unit 4 receives the substrate W from the intermediate transport device 101. The substrate W is supported from the lower side thereof by the hand 44. The holding unit 6A is moved to the receiving position PA by the moving unit 7A. Fig. 9 (B) shows a state where the hand 44 is moved to the lower side of the holding unit 6B by the movement of the arm 41 of the conveying unit 4. Fig. 9 (B) state, relative to Fig. 9 (A), the hand 44 is rotated 90 degrees in the θ direction. Therefore, the substrate W is in a posture ( Fig. 9 (A)) changes to a posture facing the Y direction ( Fig. 9 (B)).

[0098] exist Fig. 9 In the stage (B), the holding unit 6A is aligned with the substrate W. The relative position of the holding unit 6A and the substrate W is determined based on the image captured by the camera 21 installed in the delivery chamber 2, and the position of the substrate W in the X direction, Y direction and θ direction is adjusted by the conveying unit 4.

[0099] Fig.10 (A) shows a state where the arm 41 of the transport unit 4 is raised to bring the substrate W into contact with the holding portion 62 of the holding unit 6A. The substrate W is held by the holding portion 62 by the electrostatic force of the holding portion 62 . Fig.10 (B) shows a state where the arm 41 of the transfer unit 4 is lowered and the reception of the substrate W by the holding unit 6A is completed.

[0100] The above is a description of the receiving operation of the substrate W, but the receiving operation of the mask M is the same.

[0101] <Film Forming Room>

[0102] In the film forming chamber 3, a film is formed on the substrate W using a mask M. Figure 1 As shown, two mask stages 31 are respectively arranged in the two film forming chambers 3. The vapor deposition positions JA to JD for vapor deposition are defined by a total of four mask stages 31. The two film forming chambers 3 have the same structure. A vapor deposition source 8 and a moving unit 9 for moving the vapor deposition source 8 are provided in each film forming chamber 3. The structure and operation of the vapor deposition source 8 and the moving unit 9 refer to Fig.11 (A)~ Fig.11 (F) Description.

[0103] The evaporation source 8 is a film forming unit that includes a crucible for accommodating a raw material of the evaporation substance, a heater for heating the crucible, etc., and heats the raw material to release the evaporation substance as its vapor from the opening 8a upward. The moving unit 9 includes an actuator 90, a pair of movable rails 94, and a pair of fixed rails 95. The actuator 90 includes a driving source 93, an arm member 91, and an arm member 92. One end of the arm member 91 is connected to the driving source 93 and rotated by the driving source 93. The other end of the arm member 91 is rotatably connected to one end of the arm member 92, and the other end of the arm member 92 is rotatably connected to the bottom of the evaporation source 8.

[0104] The pair of movable rails 94 guide the movement of the evaporation source 8 in the Y direction. Each movable rail 94 is extended in the Y direction, and the pair of movable rails 94 are separated from each other in the X direction. The pair of fixed rails 95 guide the movement of the pair of movable rails 94 in the X direction. Each fixed rail 95 is fixed so as not to be movable and extends in the X direction. The pair of fixed rails 95 are separated from each other in the Y direction.

[0105] By driving the actuator 90, the evaporation source 8 slides in the Y direction below the evaporation position JA (below the mask stage 31), and slides from the evaporation position JA side to the evaporation position JB side, and then slides in the Y direction below the evaporation position JB (below the mask stage 31). Specifically, when the arm members 91 and 92 are moved from the evaporation position JA side to the evaporation position JB side, the arm members 91 and 92 are moved from the evaporation position JA side to the evaporation position JB side. Fig.11 When the position of (A) is rotated, Fig.11 As shown in (B), the vapor deposition source 8 passes below the vapor deposition position JA in the Y direction under the guidance of the pair of movable rails 94. When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, as shown in FIG. Fig.11 As shown in (C), the vapor deposition source 8 passes below the vapor deposition position JA in the Y direction and returns to Fig.11 (A) location.

[0106] When the arm members 91 and 92 are further rotated by the actuator 90, the vapor deposition source 8 and the pair of movable rails 94 are guided by the pair of fixed rails 95 to move toward the vapor deposition position JB in the X direction. Fig.11 When the position of (D) is further rotated, as Fig.11 As shown in FIG. 2E , the vapor deposition source 8 is guided by a pair of movable rails 94 and passes below the vapor deposition position JB in the Y direction. When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, as shown in FIG. Fig.11 As shown in (F), the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction and returns to Fig.11 (D) location.

[0107] As described above, in the present embodiment, by moving one vapor deposition source 8 , it is possible to share the vapor deposition source 8 at two vapor deposition positions, the vapor deposition position JA and the vapor deposition position JB.

[0108] Next, refer to Fig.12 (A)~ Fig.15 (B) The mounting of the mask M on the mask stage 31, the alignment operation of the mask M and the substrate W, and the subsequent film forming operation will be described.

[0109] First, the operation of placing the mask M on the mask stage 31 will be described. Fig.12 (A)~ Fig.13 (B) shows the operation of placing the mask M on the mask stage 31 at the vapor deposition position JA. Fig.12 From the state (A), the holding unit 6A holding the mask M is moved to the mask stage 31 by the moving unit 7A. Fig.13 As shown in (A), when the mask M reaches a predetermined position on the mask stage 31, Fig.13 As shown in (B), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to reduce the floating amount of the holding unit 6A, and the holding of the mask M by the holding unit 6A is released. Thus, the mask M is mounted on the mask stage 31.

[0110] Next, the alignment operation and the film forming operation will be described. Fig.14 (A) shows a state where the holding unit 6A holding the substrate W is moved to the vapor deposition position JA by the moving unit 7A. When the substrate W reaches above the mask M, the substrate W and the mask M are aligned on the XY plane. During the alignment, Fig.14As shown in (B), the camera 32 is used to photograph the alignment marks attached to the substrate W and the mask M, respectively, and the positional offset of the substrate W and the mask M is calculated based on the photographed image. Then, the position of the substrate W is adjusted in a manner that the calculated positional offset is reduced. In the case of this embodiment, the position of the substrate W is adjusted by adjusting the magnetic force of the magnetic element 71 of the moving unit 7A. By adjusting the magnetic force of each magnetic element 71 separated in the X direction and the Y direction, the position of the holding unit 6A can be displaced in the X direction, the Y direction, and the θ direction, thereby displacing the position of the substrate W held by the holding unit 6A in the X direction, the Y direction, and the θ direction. For example, if the magnetic force of the magnetic element 71 of the guide member 70 provided on one of the pair of guide members 70 is enhanced, the holding unit 6A and the substrate W can be displaced to the side of the guide member 70 on one side (or to the side of the guide member 70 on the other side) by the attraction of the magnetic force.

[0111] The photographing by the camera 32 and the alignment of the substrate W and the mask M by adjusting the magnetic force of the magnetic element 71 can also be repeated until the positional deviation between the two is within the allowable range. Fig.15 As shown in (A), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to reduce the floating amount of the holding unit 6A, and the substrate W is overlapped on the mask M. The holding unit 6A does not release the holding of the substrate W. Next, the film forming operation is performed. Fig.15 As shown in (B), while the vapor deposition source 8 is moved, the vapor deposition material is released from the vapor deposition source 8 toward the substrate W. A film of the vapor deposition material passing through the mask M is formed on the substrate W. During the film formation, the substrate W is maintained in a state of being held by the holding unit 6A.

[0112] <Operation Example of Film Forming Device>

[0113] Reference Fig.16 (A) to Fig. 20 (D) An operation example of continuously forming films on a plurality of substrates W in the film forming apparatus 1 will be described. First, the mask M is transported to the mask stage 31 at each of the vapor deposition positions JA to JD. Fig.16 (A) shows the state where the first mask M is conveyed from the intermediate conveying device 101. The conveying unit 4 receives the mask M on the hand 44, as shown in FIG. Fig.16 As shown in (B), the mask M is delivered to the holding unit 6A at the receiving position PA. The holding unit 6A holds the mask M from the upper side of the mask M.

[0114] like Fig.16 As shown in (C), the second mask M is transported from the intermediate transport device 101. At the same time, the holding unit 6A is moved parallel to the vapor deposition position JA by the moving unit 7A. The transport unit 4 receives the second mask M on the hand 44, as shown in FIG. Fig.17As shown in (A), the mask M is delivered to the holding unit 6C at the receiving position PC. The holding unit 6C holds the mask M from the upper side of the mask M. At the same time, the first mask M is placed on the mask stage 31 at the vapor deposition position JA, and the holding unit 6A returns to the receiving position PA.

[0115] like Fig.17 As shown in (B), the third mask M is transported from the intermediate transport device 101. At the same time, the holding unit 6C is moved parallel to the vapor deposition position JC by the moving unit 7A. The transport unit 4 receives the third mask M on the hand 44 and delivers the mask M to the holding unit 6B at the receiving position PB. By repeating the above steps, as shown in FIG. Fig.17 As shown in (C), masks M are arranged at the vapor deposition positions JA to JD, respectively.

[0116] Next, a series of operations for forming a film on the substrate W will be described. Fig.18 (A) shows the state where the first substrate W is transported from the intermediate transport device 101. The transport unit 4 receives the substrate W on the hand 44. Fig.18 As shown in FIG. 5(B), the substrate W is delivered to the holding unit 6A at the receiving position PA. The holding unit 6A holds the substrate W from the upper side of the substrate W.

[0117] like Fig.18 As shown in (C), the second substrate W is transported from the intermediate transport device 101. At the same time, the holding unit 6A that receives the substrate W is moved parallel to the vapor deposition position JA by the moving unit 7A. The substrate W and the mask M are aligned at the vapor deposition position JA. The transport unit 4 receives the second substrate W on the hand 44, as shown in FIG. Fig.19 As shown in (A), the substrate W is delivered to the holding unit 6C at the receiving position PC. The holding unit 6C holds the substrate W from the upper side of the substrate W. At the same time, the film forming operation of the vapor deposition source 8 is performed for the first substrate W at the vapor deposition position JA.

[0118] like Fig.19 As shown in (B), the third substrate W is transported from the intermediate transport device 101. At the same time, the holding unit 6C that has received the second substrate W is moved parallel to the vapor deposition position JC by the moving unit 7A. The substrate W and the mask M are aligned at the vapor deposition position JC. The transport unit 4 receives the third substrate W on the hand 44, as shown in FIG. Fig.19 As shown in (C), the substrate W is delivered to the holding unit 6B at the receiving position PB. The holding unit 6B holds the substrate W from the upper side of the substrate W. At the same time, the evaporation source 8 that has completed film formation at the evaporation position JA moves to the evaporation position JB side. In addition, for the second substrate W, the evaporation source 8 performs film formation at the evaporation position JC.

[0119] like Fig. 20As shown in (A), the fourth substrate W is transported from the intermediate transport device 101. At the same time, the holding unit 6B that has received the third substrate W is moved parallel to the vapor deposition position JB by the moving unit 7B. The substrate W and the mask M are aligned at the vapor deposition position JB. In addition, the holding unit 6A that holds the first substrate W that has completed film formation is moved to the receiving position PA by the moving unit 7A.

[0120] The conveying unit 4 receives the fourth substrate W on the hand 44. Fig. 20 As shown in (B), the substrate W is handed over to the holding unit 6D at the receiving position PD. The holding unit 6D holds the substrate W from the upper side of the substrate W. At the same time, the evaporation source 8 that has completed film formation at the evaporation position JC moves to the evaporation position JD side, and the holding unit 6C that holds the second substrate W that has completed film formation moves to the receiving position PC through the moving unit 7A. In addition, for the third substrate W, the evaporation source 8 performs film formation at the evaporation position JB.

[0121] When the holding unit 6A holding the first substrate W on which film formation has been completed returns to the moving unit 7A, as shown in FIG. Fig. 20 As shown in (C), the conveying unit 4 receives the first substrate W from the holding unit 6A at the receiving position PA. At the same time, the holding unit 6D receiving the fourth substrate W is moved parallel to the vapor deposition position JD by the moving unit 7B. Fig. 20 As shown in (D), the transport unit 4 transports the first substrate W on which film formation has been completed to the intermediate transport device 102. By repeating the above steps, film formation is sequentially performed on a plurality of substrates W.

[0122] According to the above film forming apparatus 1, the conveyance of the substrate W and the mask M from the intermediate conveying device 101 to each vapor deposition position JA to JD is performed by using the conveying unit 4 and the conveying unit 5A or 5B together. Compared with conveying by a single conveying mechanism, the conveying distance of each conveying unit can be shortened, and the substrate W can be conveyed over a longer distance. When conveying a large substrate W, a longer conveying distance can be achieved, and each conveying unit can be prevented from being enlarged due to high rigidity. Therefore, a film forming apparatus 1 that can cope with the enlargement of the substrate W can be provided.

[0123] In addition, different mechanisms are used in the conveying unit 4 and the conveying units 5A and 5B. That is, by forming the conveying unit 4 with a multi-joint robot, the degree of freedom of the position of the conveying destination of the substrate W and the degree of freedom of the posture (orientation) of the substrate W can be increased. In addition, by forming the conveying units 5A and 5B with a parallel movement mechanism of the substrate W, it is possible to cope with a longer conveying distance.

[0124] The transfer of the substrate W from the transport unit 4 to the transport units 5A and 5B is performed by the holding portion 62 as an electrostatic chuck, so the substrate W can be attached from the transport unit 4 to the holding portion 62 to transfer the substrate W. Compared with the method of replacing the substrate W, it is unnecessary to place the substrate W, and the transfer time can be shortened. As a result, the productivity can be improved.

[0125] When the substrate W and the mask M are transported from the transfer chamber 2 to the film forming chamber 3, the transport unit 4 changes their posture by 90 degrees so that the long sides of the substrate W and the mask M point to the Y direction. This helps to reduce the width of the film forming apparatus 1 in the X direction. Of course, a structure in which the postures of the substrate W and the mask M are not changed can also be adopted. In this case, it helps to reduce the width of the film forming apparatus 1 in the Y direction.

[0126] In the embodiment described above, the vapor deposition source 8 is configured to be movable in both the X direction and the Y direction. However, the vapor deposition source 8 may be configured to be movable only in the X direction. Fig.21 (A)~ Fig.21 (C) shows an example thereof, and illustrates the structure at the vapor deposition positions JA and JB. The same structure can be adopted at the vapor deposition positions JC and JD.

[0127] The evaporation source 8' replacing the evaporation source 8 has a shape that is elongated in the Y direction, and the opening 8a' that releases the evaporation material has a length corresponding to the length of the evaporation positions JA and JB in the Y direction. The moving unit 9' replacing the moving unit 9 has a pair of fixed rails 96. Each fixed rail 96 is extended in the X direction, and the pair of fixed rails 96 are separated from each other in the Y direction. The moving unit 9' has an actuator (not shown) that corresponds to the actuator 90.

[0128] like Fig.21 As shown in (A), the vapor deposition source 8' uses the position between the vapor deposition position JA and the vapor deposition position JB as a standby position. When a film is formed on the substrate W at the vapor deposition position JA, as shown in FIG. Fig.21 (B) shows that the deposition position JA is crossed in the X direction. In addition, when a film is formed on the substrate W at the deposition position JB, as shown in FIG. Fig.21 As shown in (C), the vapor deposition position JB is traversed in the X direction. According to the present embodiment, the mechanism of the moving unit 9' can be made relatively simple.

[0129] In the embodiment described above, the adjustment of the magnetic force of the magnetic element 71 is used when aligning the substrate W and the mask M at the vapor deposition positions JA to JD. However, a dedicated alignment device may be provided. Fig. 22 (A) and Fig. 22(B) shows an example thereof. The alignment device 10 is arranged at each of the vapor deposition positions JA to JD, and the example shown in the figure illustrates the alignment device 10 arranged at the vapor deposition position JA.

[0130] The alignment device 10 is a device that receives the substrate W from the holding unit 6A, aligns the mask M and the substrate W, and overlaps the substrate W with the mask M. The alignment device 10 includes an arm member 11 having a claw that holds the substrate W. The substrate W held by the holding unit 6A is released and placed on the arm member 11. The arm member 11 can be displaced in the X direction, the Y direction, and the θ direction by the driving unit 12, thereby adjusting the position of the substrate W placed on the arm member 11 in the X direction, the Y direction, and the θ direction. The driving unit 12 can be raised and lowered by the lifting unit 13.

[0131] The alignment device 10 further includes a plate unit 14 and an elevating unit 15 for elevating the plate unit 14. The plate unit 14 is a plate for bringing the substrate W and the mask M into close contact, and has a magnet for attracting the iron mask M and a cooler for cooling the substrate W, for example.

[0132] When aligning, Fig. 22 As shown in FIG. 1A , the alignment marks attached to the substrate W and the mask M are photographed by the camera 32, and the positional offset between the substrate W and the mask M is calculated based on the photographed image. Then, the position of the substrate W is adjusted in such a way as to reduce the calculated positional offset. The position of the substrate W is adjusted by the drive unit 12 displacing the arm member 11 on which the substrate W is placed, in a state where the substrate W and the mask M are separated from each other up and down.

[0133] The photographing by the camera 32 and the alignment of the substrate W and the mask M by adjusting the magnetic force of the magnetic element 71 can also be repeated until the positional deviation between the two is within the allowable range. Fig. 22 As shown in (B), after the holding unit 6A is withdrawn from the vapor deposition position JA, the substrate W is lowered onto the mask M together with the driving unit 12 and the arm member 11 by the lifting unit 13 so that the two overlap, and then the plate unit 14 is lowered onto the substrate W by the lifting unit 15 so that the substrate W and the mask M are in close contact. In this state, a film is formed on the substrate W.

[0134] When film formation is completed, the plate unit 14 is raised by the lifting unit 15. After the holding unit 6A moves to the vapor deposition position JA again, the lifting unit 13 raises the substrate W together with the driving unit 12 and the arm member 11, and delivers the substrate W to the holding unit 6A.

[0135] In addition, the substrate W and the mask M may be transported to the film forming chamber 3 by only the transport unit 4 without using the transport units 5A and 5B. Fig.23 (A)~ Fig.23 (D) shows an example. In the example shown in the figure, corresponding holding units 6A and 6C are arranged at each vapor deposition position JA and JC. The holding units 6A and 6C are fixedly arranged and their positions do not move. Each vapor deposition position JA and JC is a form in which vapor deposition sources 8, 8, mask stages 31, 31, and holding units 6A and 6C are arranged in sequence from the bottom. The vapor deposition source 8 can also be fixedly arranged, but in this embodiment, it is a movable form like other embodiments. The mask M is pre-mounted on the mask stage 31.

[0136] like Fig.23 As shown in (A), when a substrate W is transported from the intermediate transport device 101, the transport unit 4 receives the substrate W on the hand 44. Fig.23 (B) and Fig.23 As shown in (C), the substrate W is handed over to the holding unit 6A at the vapor deposition position JA. The vapor deposition position JA also serves as the receiving position PA. The holding unit 6A holds the substrate W from the upper side of the substrate W. The handover of the substrate W is performed by the holding portion 62 as an electrostatic suction cup, so the substrate W can be pasted from the conveying unit 4 to the holding portion 62 to perform the handover of the substrate W. Compared with the method of replacing the substrate W, there is no need to place the substrate W, and the handover time can be shortened. As a result, the productivity can be improved. The alignment of the mask M and the substrate W can be performed by adjusting the position and posture of the substrate W using the conveying unit 4.

[0137] Afterwards, if Fig.23 As shown in (D), the evaporation source 8 is moved in the Y direction to form a film on the substrate W held by the holding unit 6A. The film forming operation at the evaporation position JC is also the same, and the substrate W can be transported and film formed in parallel at the evaporation position JA and the evaporation position JC. When the film formation is completed, the transport unit 4 receives the substrate W from the holding unit 6A or 6C and sends it to the intermediate transport device 102.

[0138] In the above-described embodiment, the holding portion 62 for holding the substrate W is formed of an electrostatic chuck, but other adsorption methods may be used. Fig.24 One example is shown, showing the lower surface of the holding portion 62. A plurality of suction pads 65 are provided on the lower surface of the holding portion 62. The suction pads 65 are, for example, adhesive members that hold the substrate W by adhesive force. Alternatively, the suction pads 65 are vacuum pads.

[0139] Next, an example of a method for manufacturing an electronic device is described. Hereinafter, the structure and manufacturing method of an organic EL display device are described as an example of an electronic device.

[0140] First, the manufactured organic EL display device will be described. Fig.25 (A) is an overall view of an organic EL display device 50. Fig.25 (B) is a diagram showing a cross-sectional structure of one pixel.

[0141] like Fig.25 As shown in (A), a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. Each light emitting element has a structure including an organic layer sandwiched by a pair of electrodes, and the details will be described later.

[0142] It should be noted that the pixel referred to here refers to the smallest unit that can display the desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is formed by a combination of multiple sub-pixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that show different light emission from each other. Most of the pixels 52 are composed of a combination of three sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but are not limited to this. As long as the pixel 52 includes at least one sub-pixel, it is preferred to include two or more sub-pixels, and more preferably include three or more sub-pixels. As the sub-pixels constituting the pixel 52, for example, it can also be a combination of four sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0143] Fig.25 (B) Yes Fig.25 (A) is a partial cross-sectional schematic diagram at the AB line. The pixel 52 has a plurality of sub-pixels composed of organic EL elements, and the organic EL element has a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R / a green layer 56G / a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. Among them, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 are equivalent to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed into patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0144] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed together over the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. Fig.25 As shown in (B), after the hole transport layer 55 is formed as a common layer in multiple sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B are formed separately according to each sub-pixel region, and then the electron transport layer 57 and the second electrode 58 are formed as a common layer thereon in multiple sub-pixel regions.

[0145] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0146] exist Fig.25 In (B), the hole transport layer 55 and the electron transport layer 57 are shown as one layer, but according to the structure of the organic EL display element, they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer. In addition, a hole injection layer can be formed between the first electrode 54 and the hole transport layer 55, and the hole injection layer has an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55. Similarly, an electron injection layer can also be formed between the second electrode 58 and the electron transport layer 57.

[0147] The red layer 56R, the green layer 56G, and the blue layer 56B can be formed by a single light-emitting layer, or by stacking multiple layers. For example, the red layer 56R can be composed of two layers, with the red light-emitting layer forming the upper layer and the hole transport layer or the electron blocking layer forming the lower layer. Alternatively, the red light-emitting layer can form the lower layer and the electron transport layer or the hole blocking layer can form the upper layer. By providing a layer on the lower side or the upper side of the light-emitting layer, the light-emitting position in the light-emitting layer is adjusted, and the optical path length is adjusted, thereby having the effect of improving the color purity of the light-emitting element.

[0148] It should be noted that, although the example of the red layer 56R is shown here, the same structure can also be used in the green layer 56G and the blue layer 56B. In addition, the number of stacked layers can also be two or more. Moreover, layers of different materials can be stacked, such as the light-emitting layer and the electron blocking layer, or layers of the same material can be stacked, for example, two or more light-emitting layers can be stacked.

[0149] Next, an example of a method for manufacturing an organic EL display device is specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0150] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. It should be noted that the material of the substrate 53 is not particularly limited, and it can be made of glass, plastic, metal, etc. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

[0151] A resin layer such as acrylic or polyimide is applied by bar coating or spin coating on the substrate 53 having the first electrode 54 formed thereon, and the resin layer is patterned by photolithography to form an opening in the portion having the first electrode 54 formed thereon to form the insulating layer 59. The opening corresponds to the light emitting region where the light emitting element actually emits light.

[0152] The substrate 53 patterned with the insulating layer 59 is introduced into the first film forming chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display area. The hole transport layer 55 is formed using a mask having an opening formed in each display area 51 of the panel portion of the organic EL display device.

[0153] Next, the substrate 53 formed up to the hole transport layer 55 is sent to the second film forming chamber. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the portion of the hole transport layer 55 where the element emitting red light of the substrate 53 is configured (the region forming the red sub-pixel). Here, the mask used in the second film forming chamber is a high-precision mask having openings formed only in the multiple regions that become red sub-pixels among the multiple regions on the substrate 53 that become sub-pixels of the organic EL display device. Thus, the red layer 56R including the red light-emitting layer is formed only in the region that becomes red sub-pixels among the regions that become multiple sub-pixels on the substrate 53. In other words, the red layer 56R is not formed in the region that becomes blue sub-pixels or the region that becomes green sub-pixels among the regions that become multiple sub-pixels on the substrate 53, but is selectively formed in the region that becomes red sub-pixels.

[0154] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber, and the blue layer 56B is further formed in the fourth film forming chamber. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed in the entire display area 51 in the fifth film forming chamber. The electron transport layer 57 is formed as a common layer in the three color layers 56R, 56G, and 56B.

[0155] The substrate formed up to the electron transport layer 57 is moved to the sixth film forming chamber, and the second electrode 58 is formed. In the present embodiment, the film formation of each layer is performed by vacuum evaporation in the first film forming chamber to the sixth film forming chamber. However, the present invention is not limited to this, for example, the film formation of the second electrode 58 in the sixth film forming chamber can also be performed by sputtering. Afterwards, the substrate formed up to the second electrode 58 is moved to a sealing device, and a protective layer 60 is formed by plasma CVD (sealing process), and the organic EL display device 50 is completed. It should be noted that the protective layer 60 is formed by the CVD method here, but it is not limited to this, and it can also be formed by the ALD method or the inkjet method.

[0156] Here, the film formation in the first to sixth film forming chambers uses a mask having openings corresponding to the patterns of the layers to be formed. During film formation, after the relative position of the substrate 53 and the mask is adjusted (aligned), the substrate 53 is placed on the mask to form the film.

[0157] Next, a film thickness measuring device for measuring the film thickness of a film-formed substrate will be described. In this embodiment, a film thickness measuring device for measuring the film thickness based on the reflectivity of light on the substrate surface using an optical sensor will be described as an example.

[0158] Fig.26 The measurement positions MAA to MDC in the film forming apparatus where the film thickness measuring device 120 can be arranged are shown. The measurement positions MAA, MBA, MCA, and MDA are positions between the receiving positions PA to PD and the vapor deposition positions JA to JD, and are used to measure the film thickness of the substrate 53 transported by the transport units 5A and 5B in the transfer chamber 2, i.e., outside the film forming chamber 3. The measurement positions MAB, MBB, MCB, and MDB are positions between the receiving positions PA to PD and the vapor deposition positions JA to JD, and are used to measure the film thickness of the substrate transported by the transport units 5A and 5B in the film forming chamber 3. The measurement positions MAC, MBC, MCC, and MDC are positions for measuring the film thickness of the substrate located at the vapor deposition positions JA to JJD in the film forming chamber 3. It should be noted that the film thickness measuring device 120 may be arranged at least one of the measurement positions MAA to MDC between the receiving positions PA to PD and the vapor deposition positions JA to JD, and it is not necessary to arrange the film thickness measuring device 120 at all the measurement positions.

[0159] Fig. 27 This is a cross-sectional view of the film forming device on the YZ plane. Fig. 27 As shown, the measurement positions MAA to MDC where the film thickness measuring device 120 can be arranged are all arranged below the substrate 53 in the vertical direction (Z direction). Thus, the film thickness measuring device 120 can measure the film thickness of the substrate 53 during transportation by the transportation units 5A and 5B.

[0160] In this way, since the film thickness of the substrate W is measured while the substrate W is adsorbed by the ESC, the measurement accuracy can be improved, and the film measurement can be performed without the need for additional large-scale equipment such as a film measurement chamber. In addition, since the film thickness is measured during transportation, the film thickness can be measured at a high speed after film formation.

[0161] Fig.28 (A) to (C) are explanatory diagrams for explaining the measurement principle using an example in which the film thickness measurement device 120 is arranged at the measurement position MAA.

[0162] Fig.28(A) is a diagram showing the case where the film thickness measuring device 120 emits laser light and measures the intensity of reflected light before the substrate is introduced into the film forming chamber 3. Here, the intensity of the received laser light is denoted as P. BG By measuring the received light intensity, it is possible to determine the magnitude of noise (background noise) caused by the temperature characteristics of the light receiving sensor and the like, and light leakage between optical fibers in a measuring device described later.

[0163] then, Fig.28 (B) is to place the reference substrate W REF This is a diagram showing the case where the film thickness measuring device 120 is used to emit laser light and measure the intensity of reflected light as a reference when the film is sent to the film forming chamber 3. Fig.28 In (B), a glass having a reflectivity R such as plain glass is used. ref Known substrate W REF Here, if the irradiation intensity of the transmitted laser is set to P Tref , the received laser light intensity is set to P Rref , then the following mathematical formula (1) holds.

[0164] R ref =(P Rref -P BG ) / (P Tref -P BG ) (1)

[0165] Here, as described above, the reflectance R, Fig.28 (A) The light intensity P BG , Fig.28 (B) The light intensity P Rref Therefore, the laser irradiation intensity P can be determined based on the above formula Tref Thus, the correspondence between reflectivity and received light intensity can be determined.

[0166] then, Fig.28 (C) is a diagram showing the case where the film thickness measuring device 120 emits laser light and measures the intensity of reflected light when the substrate W is sent out from the film forming chamber 3 after film formation in the film forming chamber 3. Fig.28 (C) can refer to Fig.28 (B) The laser irradiation intensity P determined in Tref , based on the received laser light intensity P R The reflectivity R of the substrate W after film formation is determined by the following mathematical formula (2).

[0167] R=(P R -P BG ) / (P Tref -P BG ) (2)

[0168] Thereby, the change in reflectivity can be determined.

[0169] It should be noted that Fig.28 (A) and Fig.28 The measurement of background noise and the measurement of reference as shown in (B) may be performed for each substrate, or may be performed after film formation is performed on a predetermined number of substrates, or after a predetermined time has passed.

[0170] Fig.30 An example of the measurement results of the reflectivity of each film thickness after film formation is shown. Fig.30 shown, with a film thickness of 40 angstroms The reflectivity of the substrate in the case of In the case of 280, 330-420 nm, the reflectivity around the wavelength becomes larger. Therefore, by measuring the reflectivity of this band, the film thickness can be estimated. In estimating the film thickness based on the reflectivity, known techniques can be used. For example, the reflectivity can be measured in advance with multiple film thicknesses, and the measured reflectivity can be used to estimate which measurement result is close to it.

[0171] In the estimation of the film thickness based on the reflectivity measurement results, the film thickness may be estimated based on the reflectivity measured in a plurality of frequency bands. For example, the film thickness estimation results based on the reflectivity measurement results at wavelengths of 280 nm and 330 nm are respectively and In the case of , the average of the estimated film thickness can be taken, and the film thickness is

[0172] <<Configuration Example of Film Thickness Measuring Device>>

[0173] (Structural Example 1)

[0174] Fig.29 (A) shows a configuration example of the film thickness measuring device 120. The film thickness measuring device 120 of configuration example 1 includes a light source 2901, a vacuum flange 2902, a light projecting and receiving unit 2903, a spectrometer 2904, and a PC 2905. The light source 2901, the vacuum flange 2902, the light projecting and receiving unit 2903, and the spectrometer 2904 are connected by optical fibers.

[0175] The light source 2901 is a light emitting device that can switch between output and non-output of light by operating a shutter 29011. In one example, the light source 2901 includes a deuterium (D2) halogen light source 29012 that emits continuous light of halogen and deuterium from one emission port. In another example, the light source 2901 includes a laser-driven plasma light source.

[0176] The vacuum flange 2902 is arranged at the connection part between the vacuum environment and the atmospheric environment. For example, the light source 2901, the spectrometer 2904, and the PC 2905 are arranged in a frame that is maintained in the atmospheric environment, and the light-projecting and receiving unit 2903 is arranged in the film-forming chamber that can be placed in a vacuum state outside the frame, and the optical fiber connecting the light-projecting and receiving unit 2903 with the light source 2901 and the spectrometer 2904 connects the inside and outside of the frame via the vacuum flange 2902. In another example, the light-projecting and receiving unit 2903 can also be arranged on the inner side of the film-forming chamber 3 or the delivery chamber 2, and the light source 2901, the spectrometer 2904, and the PC 2905 can be arranged on the outer side of the film-forming chamber 3 or the delivery chamber 2. In this case, the vacuum flange 2902 can also be set on the wall surface of the film-forming chamber 3 or the delivery chamber 2.

[0177] The light projecting and receiving unit 2903 is provided with a light source for transmitting light emitted from the light source 2901. Fig. 27 As shown, the light projecting part emits light vertically upward and the light receiving part receives reflected light and sends it to the spectrometer 2904. The spectrometer 2904 has a light input port, splits the input light and measures the light intensity for each wavelength band. Then, information related to the measured light intensity is sent to the PC 2905.

[0178] PC2905 calculates the measured value of the film thickness using the above mathematical formulas (1) and (2) based on the intensity of the light measured by the spectrometer 2904. In addition, in one example, PC2905 can use the measured value of the film thickness to adjust the time taken for the film forming process of the film forming device 2, adjust the amount of the evaporation material discharged from the evaporation source 8 of the film forming device 2, adjust the parameters of the subsequent film forming process, etc.

[0179] (Structural Example 2)

[0180] Fig.29 (B) shows a configuration example 2 of the film thickness measuring device 120. The film thickness measuring device 120 of configuration example 2 includes a light source 2921, vacuum flanges 2922a and 2922b (hereinafter, sometimes referred to as the vacuum flange 2922 without distinction), light projecting and receiving units 2923a and 2923b (hereinafter, sometimes referred to as the light projecting and receiving unit 2923 without distinction), a spectrometer 2924, a PC 2925, an optical fiber switch 2926, and a connector 2927. The light source 2921, the vacuum flange 2922, the light projecting and receiving unit 2923, the spectrometer 2924, the optical fiber switch 2926, and the connector 2927 are connected by optical fibers.

[0181] The light source 2921 , vacuum flange 2922 , light projecting and receiving unit 2923 , spectrometer 2924 , and PC 2925 are the same as the light source 2901 , vacuum flange 2902 , light projecting and receiving unit 2903 , spectrometer 2904 , and PC 2905 described in Example 1, and thus their description is omitted.

[0182] The connector 2927 connects the branch optical fiber used to branch the light output from the light source 2921 to a plurality of input ports of the optical fiber switch 2926 to the light source 2921 .

[0183] The optical fiber switch 2926 is a switch that switches the output / non-output of the light input from the branch optical fiber, and sends out the light from any output port. In this embodiment, the case where the optical fiber switch 2926 has 3 inputs and 3 outputs is described, but as long as multiple pairs of input ports and output ports are set, the number is not limited. In this embodiment, the light output from the first output port (set as port 1) is directly input to the light-emitting and receiving unit 2923a, the light output from the second output port (set as port 2) is directly input to the light-emitting and receiving unit 2923b, and the light output from the third output port (set as port 3) is directly input to the spectrometer. Thus, by arranging the light-emitting and receiving units 2923a and 2923b at different measurement positions MAA to MDC, the film thickness of multiple transmission lines can be measured. In addition, by arranging the light-emitting and receiving units 2923a and 2923b at different locations of a measurement position, the measurement accuracy of the film thickness of a transmission line can be improved. In addition, the intensity change of the light output from the light source 2921 can be detected through port 3.

[0184] (Structural Example 3)

[0185] Fig.29 (C) shows a configuration example 3 of the film thickness measuring device 120. The film thickness measuring device 120 of configuration example 3 includes light sources 2941a and 2941b (hereinafter, sometimes referred to as light sources 2941 without distinction), vacuum flanges 2942a and 2942b (hereinafter, sometimes referred to as vacuum flanges 2942 without distinction), light projecting and receiving units 2943a and 2943b (hereinafter, sometimes referred to as light projecting and receiving units 2943 without distinction), a spectrometer 2944, and a PC 2945. The light source 2941, the vacuum flange 2942, the light projecting and receiving unit 2943, and the spectrometer 2944 are connected by optical fibers.

[0186] The light source 2941 , vacuum flange 2942 , light projecting and receiving unit 2943 , spectrometer 2944 , and PC 2945 are the same as the light source 2901 , vacuum flange 2902 , light projecting and receiving unit 2903 , spectrometer 2904 , and PC 2905 described in Example 1, and thus their description is omitted.

[0187] According to Configuration Example 3, it is not necessary to prepare a spectrometer and a PC for each measurement position.

[0188] <<Tapered Components>>

[0189] like Fig. 27As shown in FIG. 1 , at the locations MAA to MDC where the film thickness measuring device 120 is arranged, the measuring light emitted from the film thickness measuring device 120 is reflected at the top of the transfer chamber 2 and the film forming chamber 3 and input to the light projecting and receiving unit. As a result, the measuring accuracy may be reduced. Fig.31 In the example, a conical component 3101 is disposed at the top portion of the transfer chamber 2. For example, the conical component 3101 has a triangular prism, a pyramid, or a cone shape. Thus, the measuring light can be reflected in a direction different from that of the film thickness measuring device 120. In addition, in one example, the conical component 3101 is a black component with a high light absorption rate. In addition, in one example, the surface portion irradiated with the measuring light from the film thickness measuring device 120 is subjected to surface processing such as sandblasting, which can promote the diffusion of light.

[0190] By configuring the tapered member 3101 in this way, it is possible to prevent the measurement light emitted from the film thickness measurement device 120 from being reflected at a portion different from the substrate W, thereby preventing the measurement accuracy of the film thickness from being reduced.

[0191] <<Configuration example of substrate and holding unit>>

[0192] like Fig.32 As shown, on the substrate, film forming regions 3201a to 3201c (hereinafter, sometimes referred to as film forming regions 3201 without distinction) for measurement are arranged at each location to be measured by the film thickness measuring device 120. Fig.32 , the figure shows a case where three film forming regions 3201a to 3201c are arranged for measuring at three locations on the substrate W, but the film forming regions for measuring the film thickness may be determined in accordance with the number of measurement locations, or one film forming region may be arranged for measuring the film thickness at multiple locations. For example, one long hole-shaped film forming region including the film forming regions 3201a to 3201c may be arranged.

[0193] In one example, the film formation region 3201 is arranged in a region different from a region where an electronic device is actually manufactured on the substrate W. For example, the film formation region is arranged near an end of the substrate W so that a common position can be measured in a plurality of substrates for manufacturing different electronic devices.

[0194] In addition, when the film thickness is measured at the measurement positions MAA and MAB, etc., while the substrate W is being transported by the holding unit 6, there is a case where the measurement light from the film thickness measuring device is reflected by the holding unit 6, resulting in a decrease in the measurement accuracy of the film thickness. Therefore, an opening is also arranged in the holding unit 6 at a position corresponding to the film forming area 3201, for example, at a position vertically above the film forming area 3201. This can prevent the following situation: the measurement light irradiated from the film thickness measuring device 120 is reflected by the holding unit 6 holding the substrate, and the reflected light is incident on the light receiving part of the film thickness measuring device 120 to become noise in the measurement.

[0195] In addition, in order to form a film in the film forming area 3201 for measurement, an opening is also provided in the mask M. Fig. 27 The film thickness is measured while the mask M is positioned on the substrate W at the position where the film thickness is measured at the film formation position, as in the measurement position MAC.

[0196] <<Joint Structure>>

[0197] Fig.33 (A)~ Fig.33 (C) means, for example Fig.29 (B) is an explanatory diagram of a connector structure used for connecting an optical fiber that transmits light in the film thickness measurement device 120, such as a connector 2927.

[0198] Fig.33 (A) is a perspective view of the connector structure. The optical fiber is connected by inserting the plug 3302 into the connector 3301. The connector 3301 is formed by fixing a wire 3311 on the output side of the light with a cable installer 3312, connecting the cable installer 3312 to an adapter 3313, and connecting the adapter 3313 to a cylindrical member 3314.

[0199] The plug 3302 is formed into a structure in which a plurality of input-side wires 3321 are bundled, and the bundled wires are entirely coated with resin. The resin is protected by a stainless steel cylindrical member 3322. By allocating the bundled wires according to the number of branches, the optical fiber used for connecting the connector 2927 and the optical fiber switch 2926 can be branched.

[0200] Fig.33 (B) is a cross-sectional view of the connector. The wire 3311 includes a cladding, a core, and a cladding. The length L1 of the cable installer 3312 inserted into the adapter 3313 is predetermined according to the specified specifications. The front end of the cable installer 3312 is fixed to the wire 3311 in an aligned manner. The excess length L2 on the adapter 3313 side when the cable installer 3312 is inserted into the adapter 3313 is also predetermined according to the specified specifications.

[0201] Here, if Fig.33 As shown in (B), if light is emitted from the wire 3311, the light is emitted from the front end of the wire 3311 at a predetermined emission angle. In one example, the emission direction is set to 0 degrees and the emission angle is 11 to 13 degrees. Therefore, when the front end position of the plug 3302 is located at position 3341, the light is incident on the wire near the center of the plug 3302, but the light is not incident on the wire located on the outer peripheral side of the plug 3302. On the other hand, when the front end position of the plug 3302 is located at position 3343, the light is incident on the entire wire, but the light is also irradiated to the stainless steel cylindrical part of the plug 3302, and the intensity of the light incident on the wire becomes smaller. Therefore, the front end position of the plug 3302 is like position 3342, by making the light incident on the entire wire and not irradiating light outside the wire, it is possible to suppress the loss of light generated when the optical fiber is connected.

[0202] Therefore, in the connector 2927 shown in this embodiment, Fig.33 As shown in (C), a spacer 3361 is arranged inside the cylindrical member so as to abut against the front end of the inserted plug 3302. Fig.33 In (C), the spacer 3361 is shown as a cylindrical member, but it can also be composed of cylindrical glass. In this case, the thickness of the spacer 3361 can also be determined by considering the refraction of light at the incident surface. In this way, in the joint structure of this embodiment, the spacer 3361 is configured to keep the distance between the wires on the output side and the multiple wires on the input side constant.

[0203] Alternatively, the incident surface of the spacer 3361 on the wire 3311 side may be convex, and a lens effect may be obtained by the spacer 3361. Thus, light can be incident perpendicularly to the cross section of the front end of the plug 3302.

[0204] Next, a configuration example for performing reference measurement in order to correct the intensity of light irradiated to a substrate in a reflectance measuring device for determining the film thickness of a film-formed substrate is described. It should be noted that the same reference numerals are used for the same configurations, functions, and processes as those described so far, and the description thereof is omitted.

[0205] In the film thickness measuring device 120 (reflectivity measuring device) of the present embodiment, the measurement accuracy is prevented from being deteriorated due to the reference substrate W. REF, substrate W, etc. The intensity of the light irradiated to the object to be measured may also change due to the change in the intensity of the light emitted from the light source itself due to temperature changes or voltage changes, but it may also be caused by changes in the transmission loss of the light caused by changes in the posture of the optical fiber such as bending and elongation of the optical fiber that transmits the light emitted from the light source. Therefore, the film thickness measuring device of this embodiment transmits the light for reference measurement in a manner that the path of the light used for film thickness measurement overlaps with the path of the light used for film thickness measurement, thereby including the change in the intensity of the light irradiated to the object to be measured caused by the change in the transmission loss of the light of the optical fiber, and performs reference measurement.

[0206] Fig.34 It is a diagram showing a configuration example of a film thickness measurement device according to the present embodiment. Fig.34 In the film thickness measuring device 120 shown in FIG. 1 , light emitted from a light source 3401 is branched to a plurality of light-emitting wires 34031 to 3403 through a connector 3402. k (Hereinafter, sometimes it is not distinguished and is referred to as the light-casting wire 3403.) The light-casting wire 3403 is connected to the light-casting and receiving head 3405 as one optical fiber through the vacuum flange 3404 by, for example, coating a plurality of wires. In addition, a part of the light-casting wire 3403 is used as a wire for reference measurement, and the other part is allocated as a wire for film thickness measurement.

[0207] The light projecting and receiving head 3405 irradiates the light from the wire for film thickness measurement toward the object to be measured. The reflected light reflected by the object to be measured is input to the wire for receiving light 34061 input to the spectrometer 34071. On the other hand, the light from the wire for reference measurement is input to the wire for receiving light 34062 input to the spectrometer 34072 through the return structure 34051 without being irradiated to the object to be measured. The intensity of the light measured by the spectrometer 3407 is sent to the PC 3408 and used for the measurement of reflectivity described later.

[0208] It should be noted that the light receiving wire 3406 is input to the spectrometers 34071 and 34072, respectively. Here, the light receiving wire 3406 can also be wired as one optical fiber by concentrating the coating at the branch point 3409. Moreover, at the branch point 3409, the wire 34061 for film thickness measurement and the wire 34062 for reference measurement are input to the spectrometer 3407. The spectrometer 34071 is connected to the light receiving wire for transmitting the reflected light reflected by the measured object, and the spectrometer 34072 is connected to the light receiving wire for transmitting the light input by the return structure 34051.

[0209] The light source 3401, the joint 3402, the vacuum flange 3404, the light projecting and receiving head 3405, and the PC 3408 have the same structure as the light source 2921, the joint 2927, the vacuum flange 2922, the light projecting and receiving unit 2923, and the PC 2925 described in the seventh embodiment, so the description is omitted.

[0210] Here, refer to Fig.35 (A) Fig.35 (B) The structure of the light projecting and receiving head 3405 is described. Fig.35 (A) is a diagram showing the light projecting and receiving head 3405 as viewed from the side of the object to be measured. Fig.35 (B) is a cross-sectional view of the light projecting and receiving head 3405 on a plane parallel to the irradiation direction of light.

[0211] like Fig.35 As shown in (A), the light projecting and receiving head 3405 is provided with wires 35011 to 3501 shown in blank for light projection. k (hereinafter, sometimes referred to as the light-emitting wire 3501 without distinction) and the light-receiving wires 35021 to 3502 shown in the shadows j (Hereinafter, they may not be distinguished and may be referred to as light receiving wires 3502 .) The projecting wires 3501 and the light receiving wires 3502 can be set arbitrarily, but in one example, 20 projecting wires 3501 are arranged (k=20), and 10 light receiving wires 3502 are arranged (j=10).

[0212] In addition, the light projecting and receiving head 3405 is provided with a folding structure 34051 so as to cover one or more light projecting wires 3503 and one or more light receiving wires 3504. The folding structure 34051 is a correction light input unit for inputting the light transmitted in the light projecting wire 3503 to the light receiving wire 3504 without irradiating the measurement object.

[0213] Here, refer to Fig.35 (B) The structure of the folded structure 34051 will be described. Fig.35 (B) is through Fig.35(A) is a cross-sectional view of the light projecting and receiving head 3405 on the plane of the dotted line L and the irradiation direction of light. The folding structure arranged in the light projecting and receiving head 3405 includes a transparent layer 3511 and an opaque layer 3512. As described above, the transparent layer 3511 is arranged in a manner to cover the exit port of the light projecting wire 3503 and the entrance port of the light receiving wire 3504, and is composed of a transparent material for transmitting light. In addition, the opaque layer 3512 is a light shielding component arranged on the measurement object side of the wire covered by the transparent layer 3511. Thereby, it is possible to prevent the external light irradiated from the light projecting wire 3501, such as the reflected light irradiated to the measurement object and reflected, from being input to the light receiving wire 3504 and becoming noise during the reference measurement, and it is possible to transmit light from the light projecting wire 3503 to the light receiving wire 3504.

[0214] It should be noted that in Fig.35 In (B), the diagram shows that the light emitted from the light-emitting wire 3503 is reflected at the boundary between the transparent layer 3511 and the non-transparent layer 3512 and is incident on the light-receiving wire 3504, but the light-emitting wire 3503 and the light-receiving wire 3504 can also be connected by an optical fiber instead of the transparent layer 3511 and the non-transparent layer 3512.

[0215] <<Method for measuring reflectivity>>

[0216] Here, refer to Fig.36 (A)~ Fig.36 (C) A method for measuring reflectance performed by the film thickness measurement apparatus of this embodiment is described.

[0217] exist Fig.36 In (A), the film thickness measuring device 120 stores the intensity of the reflected light input to the spectrometer 34071 when measuring the background noise as P Rmea1 , the intensity of the reference measurement light input to the spectrometer 34072 is stored as P Rref1 That is, in Fig.36 In (A), if the light intensity is set to P T1 , then when the irradiation intensity P T1 When the light is received, the light intensity P Rref1 The light intensity of the reference light is used as the reference, and the light intensity of the background noise is used as the background noise. Rmea1 of light.

[0218] Then, if Fig.36 As shown in (B), when measuring the reference measurement substrate W REF When the reflectivity is , the intensity of the light for measuring the reflectivity input to the spectrometer 34071 is stored as P Rmea2 , the intensity of the reference measurement light input to the spectrometer 34072 is stored as P Rref2Here, the light intensity is set to P T2 .

[0219] Here, assuming that the intensity of the light used for reference measurement is P Rref2 Does not change depending on the presence or absence of the measured object, relative to the irradiation intensity P T2 The measured reference light intensity P Rref2 With respect to the irradiation intensity P T1 The measured reference light intensity P Rref1 Therefore, the light irradiation intensity P can be determined as shown in the following mathematical formula (3): T2 .

[0220] P T2 =(P Rref2 / P Rref1 ) T1 (3)

[0221] Here, the irradiation intensity P T2 The size of the background noise when irradiating light can be determined as (P T2 / P T1 ) Rmea1 Therefore, with an irradiation intensity of P T2 To the reference measurement substrate W REF The intensity of the reflected light obtained by irradiating light can be expressed as P Rmea2 -(P T2 / P T1 ) Rmea1 Therefore, the reference substrate W REF The reflectivity R ref It can be expressed by the following mathematical formula (4).

[0222] R ref = {P Rmea2 -(P T2 / P T1 ) Rmea1} / P T2 (4)

[0223] Here, by substituting equation (3) into equation (4), we can obtain the value of ref To determine the light intensity P T2 In addition, based on the mathematical formula (3), the light irradiation intensity P when measuring the background noise can also be determined: T1 .

[0224] Then, if Fig.36 As shown in FIG. 2A , when the reflectivity R of the substrate W after film formation is measured, the intensity of the light for measuring the reflectivity input to the spectrometer 34071 is stored as P. Rmea3, the intensity of the reference measurement light input to the spectrometer 34072 is stored as P Rref3 It should be noted that Fig.36 The intensity of light in (C) is assumed to be P T3 .

[0225] Here, in Fig.36 In (C), the receiving strength P Rref3 The light intensity P is used as the reference light intensity for measurement. Therefore, the light irradiation intensity P can be determined based on the following formula (3') in the same way as the above formula (3) and in the same way as when measuring the background noise. T3 .

[0226] P T3 =(P Rref3 / P Rref1 ) T1 (3')

[0227] Then, with Fig.36 (B) Similarly, with irradiation intensity P T3 The size of the background noise obtained when irradiating light can be estimated as (P T3 / P T1 ) Rmea1 Therefore, with an irradiation intensity of P T3 The intensity of the reflected light obtained by irradiating the substrate W after film formation with light can be expressed as P Rmea3 -(P T3 / P T1 ) Rmea1 Therefore, the reflectivity R of the substrate W can be expressed by the following mathematical formula (4').

[0228] R={P Rmea3 -(P T3 / P T1 ) Rmea1} / P T3 (4')

[0229] Here, the determined irradiation intensity P T1 , P T3 And the measured P Rmea3 , P Rmea1 By substituting into equation (4'), the reflectivity R of the substrate W can be determined.

[0230] As described above, the film thickness measurement device of the present embodiment can measure the reflectance with high accuracy by performing reference measurement regardless of changes in the intensity of light sent from the light source or changes in the posture of the optical fiber.

[0231] In addition, the film thickness measuring device of this embodiment combines the wires transmitting the light for reference measurement and the wires transmitting the light for reflectivity measurement and connects them to the light projecting and receiving head. In addition, at least a part of the path from the light projecting and receiving head to the spectrometer is combined and wired. Thus, in the wires for reference measurement and the wires for reflectivity measurement, it is possible to prevent the measurement accuracy of reflectivity from being reduced due to the change of light loss caused by the change of the cable posture.

[0232] <<Modifications>>

[0233] Reference Fig.37 , a modification of the film thickness measuring device 120 is described. Fig.34 The same structures are denoted by the same reference numerals, and description thereof will be omitted.

[0234] Fig.37 The light projecting and receiving head 3701 shown in the figure has a branching structure 37011 for branching the light inputted via a single wire. Then, a part of the branched light is incident on the wire 34062 for reference measurement via the return structure 37012. Thus, the light for reference measurement and the light for reflectivity measurement can be transmitted from the light source 3401 to the light projecting and receiving head 3701 via the same wire 3702, and the decrease in the measurement accuracy of reflectivity due to the change in light loss caused by the change in the posture of the optical fiber can be prevented.

[0235] In addition, this embodiment can be combined with the first to seventh embodiments arbitrarily. For example, in this embodiment, a structure in which one light projecting and receiving head 3405, 3701 is provided for one light source is described, but it can also be as follows Fig.29 As shown in (B), multiple light projecting and receiving heads are set for one light source.

[0236] In addition, Fig.36 (A)~ Fig.36 In (C), the figure shows the case where the film thickness measuring device 120 is arranged in the delivery chamber 2, but it can also be arranged in Fig.26 Any of the measurement positions MAA to MDC shown.

[0237] In addition, in one example, Fig.34 In the portion where the wire for transmitting the light for reference measurement and the wire for transmitting the light for measuring the reflectivity are wired as different cables between the branch point 3409 and the spectroscope 3407, the respective cables can be fixed. Thus, it is possible to prevent a difference in the change in the loss of the light for reference measurement and the light for measuring the reflectivity due to a change in the posture of the cable between the branch point 3409 and the spectroscope 3407. In addition, in one example, the length of the cable between the branch point 3409 and the spectroscope 3407 is suppressed to less than 5 m.

[0238] <Other Implementation Methods>

[0239] The present invention can also be implemented by providing a program that implements one or more functions of the above-mentioned embodiments to a system or device via a network or storage medium, and one or more processors in a computer of the system or device read out and execute the processing of the program. In addition, it can also be implemented by a circuit (for example, ASIC) that implements one or more functions.

[0240] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are appended to disclose the scope of the invention.

Claims

1. A reflectivity measuring device, characterized in that: The reflectivity measuring device comprises: light source; a light projecting and receiving head, the light projecting and receiving head comprising a light projecting unit, a reflected light input unit and a corrected light input unit, the light projecting unit irradiating the first light of the first light and the second light included in the light from the light source input into the light projecting and receiving head to the object to be measured, the reflected light input unit inputting the reflected light after the first light is reflected by the object to be measured to the first wire, and the corrected light input unit inputting the second light to the second wire without irradiating the object to be measured; a measuring member configured to measure an intensity of a third light transmitted via the first wire and an intensity of a fourth light transmitted via the second wire; as well as a determining member that determines the reflectivity of the object to be measured based on the intensity of the third light and the intensity of the fourth light measured by the measuring member, The first light and the second light are input to the light projecting and receiving head via different wires.

2. A reflectivity measuring device, characterized in that: The reflectivity measuring device comprises: light source; a light projecting and receiving head, the light projecting and receiving head comprising a light projecting unit, a reflected light input unit and a corrected light input unit, the light projecting unit irradiating the first light of the first light and the second light included in the light from the light source input into the light projecting and receiving head to the object to be measured, the reflected light input unit inputting the reflected light after the first light is reflected by the object to be measured to the first wire, and the corrected light input unit inputting the second light to the second wire without irradiating the object to be measured; a measuring member configured to measure an intensity of a third light transmitted via the first wire and an intensity of a fourth light transmitted via the second wire; as well as a determining member that determines the reflectivity of the object to be measured based on the intensity of the third light and the intensity of the fourth light measured by the measuring member, The first light and the second light are input to the light projecting and receiving head via the same wire. The light projecting and receiving head further includes a branching portion that inputs the first light and the second light into different wires.

3. The reflectivity measuring device according to claim 1 or 2, wherein: The corrected light input unit reflects the second light using a reflector different from the object to be measured, thereby inputting the second light into the second wire.

4. The reflectivity measuring device according to claim 1 or 2, wherein: The correction light input unit includes a light shielding member, and the light shielding member is arranged on the side of the object to be measured so as to prevent external light from being input to the second wire.

5. The reflectivity measuring device according to claim 1 or 2, characterized in that: The first wire and the second wire are coated and connected to the light projecting and receiving head. The first wire and the second wire are branched at a branch point between the light projecting and receiving head and the measuring member.

6. The reflectivity measuring device according to claim 5, wherein: The length of the wire from the branch point to the measurement member is 5 m or less.

7. A film forming device, characterized in that: The film forming device comprises: A film forming chamber, wherein the film forming chamber is provided with a film forming unit for forming a film on a substrate; a conveying member that conveys the substrate between a film forming position of the substrate and a receiving position of the substrate while holding the substrate at a lower side; as well as A reflectance measuring device according to any one of claims 1 to 6 for measuring the reflectance of a film formed on a substrate held by a conveying member.

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