Dual photodiode electromagnetic radiation sensor device
By using a back-to-back dual photodiode sensor, the bandgap difference between materials such as silicon and germanium is utilized to solve the problems of sensor manufacturing complexity and compatibility, realize the integration of the sensor with CMOS electronic devices, and provide flexible spectral response adjustment and multi-band imaging capabilities.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- POLITECNICO DI MILANO (100 00)
- Filing Date
- 2021-07-29
- Publication Date
- 2026-07-07
AI Technical Summary
Existing dual photodiode electromagnetic radiation sensors are complex to manufacture and incompatible with the integration of CMOS electronic devices, making it difficult to integrate the sensor with electronic control and readout modules.
The sensor employs a back-to-back dual photodiode configuration, utilizes semiconductor materials with different band gaps (such as silicon and germanium) to manufacture the sensor, and integrates the sensor and electronic conditioning system on the same substrate through CMOS-compatible integration technology, simplifying the manufacturing process and achieving a planar structure.
It achieves compatible integration of sensors and CMOS electronics, simplifies the manufacturing process, and can operate in the visible, near-infrared to short-wave infrared bands, providing flexible spectral response adjustment capabilities, and is suitable for a variety of spectral analysis and imaging applications.
Smart Images
Figure CN116097455B_ABST