Elastic wave device
By incorporating dielectric films and low-velocity layers with varying angles into the elastic wave device, the problem of easily deteriorating characteristics of piezoelectric single crystal devices was solved, resulting in more stable device performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MURATA MFG CO LTD
- Filing Date
- 2021-08-19
- Publication Date
- 2026-07-07
AI Technical Summary
When existing elastic wave devices use piezoelectric single crystals such as LiTaO3, the Z-axis of the crystal is not aligned with the normal direction of the main surface of the piezoelectric substrate, which leads to easy degradation of the characteristics.
In the elastic wave device, a first dielectric film and a second dielectric film of IDT electrode are set so that they are at different angles α1 and α2 with the main surface of the piezoelectric film, ensuring that α1≠α2, and a low sound velocity layer is set in the edge region of the intersection area to form a sound velocity gradient to suppress stress concentration.
It effectively suppressed the degradation of the elastic wave device's characteristics, reduced the occurrence of polarization reversal, and improved the device's stability and performance.
Smart Images

Figure CN116097563B_ABST