A multi-silicon block bonding process

Abstract

This invention discloses a multi-silicon block bonding process, comprising the following steps: 1) applying bonding adhesive to the top surface of the crystal tray; 2) placing the carrier plate flat on the top surface of the crystal tray; 3) pressing a pressure plate flat on the carrier plate to make the carrier plate and the crystal tray completely adhere; 4) removing the pressure plate and applying bonding adhesive to the top surface of the carrier plate; 5) placing at least two rows of pre-prepared silicon block groups on the bonding adhesive layer on the top surface of the carrier plate, leaving a gap between adjacent rows of silicon block groups; the gap between adjacent rows of silicon block groups is the row gap; 6) placing a top plate with partitions on the bottom surface flat on each row of silicon block groups, and inserting the partitions into the corresponding row gaps; 7) applying pressure to the silicon block groups on the top surface of the carrier plate to make adjacent rows of silicon block groups adhere tightly to the partitions between the two rows of silicon block groups; 8) pressing the pressure plate flat on the top plate to make each silicon block completely adhere to the carrier plate. This invention can automatically attach rods to multiple silicon blocks with precise positioning, effectively improving rod attachment efficiency and wafer production capacity, and is simple and intelligent to operate.

Description

Technical Field

[0001] This invention relates to the photovoltaic field, and more specifically to a multi-silicon block bonding process. Background Technology

[0002] Crystalline silicon solar cells are made from silicon wafers; silicon wafers can be obtained by slicing a rod-mount assembly (i.e., a whole rod) by splicing and bonding silicon blocks (such as square rods). Currently, the rod-mount bonding process in the photovoltaic industry is mainly done manually, and generally two square rods are used to complete the bonding of the whole rod to meet the requirements of rapid rod bonding. However, with the development of photovoltaic technology, half-cell and small-wafer silicon wafer technologies have emerged; when preparing half-cells and small-wafers, it is often necessary to use more silicon blocks to splice and bond them into a whole rod. Due to the limitation of coating time, the coating and bonding of rods are carried out in segments and require two operators to work together. This manual rod bonding method is time-consuming and labor-intensive, with low production efficiency, and cannot increase production capacity. Summary of the Invention

[0003] To address the shortcomings of existing technologies, this invention provides a multi-silicon block bonding process, comprising the following steps:

[0004] 1) Apply adhesive to the top surface of the crystal tray to form an adhesive layer on the top surface of the crystal tray;

[0005] 2) Place the carrier plate flat on the adhesive layer on the top surface of the crystal tray;

[0006] 3) Press the heavy-duty plate flat onto the carrier plate to ensure complete contact between the carrier plate and the crystal holder;

[0007] 4) Remove the heavy pressure plate from the carrier plate; then apply adhesive stick to the top surface of the carrier plate to form an adhesive stick layer on the top surface of the carrier plate;

[0008] 5) Place at least two rows of pre-prepared silicon block groups on the adhesive layer on the top surface of the carrier board, so that each row of silicon block groups is arranged side by side and there is a gap between adjacent rows of silicon block groups; the gap between adjacent rows of silicon block groups is called the row gap.

[0009] 6) Place the top plate with partitions on the bottom surface flat on each row of silicon blocks so that the top plate covers each silicon block; the partitions on the bottom surface of the top plate correspond one-to-one with the gaps between rows, and the partitions are inserted into the corresponding gaps between rows.

[0010] 7) Apply pressure to the silicon block group on the top surface of the carrier board to make the two adjacent rows of silicon block groups adhere tightly to the partition between the two rows of silicon block groups;

[0011] 8) Press the heavy plate flat onto the top plate to ensure that each silicon block is fully attached to the carrier plate;

[0012] 9) Remove the heavy pressure plate on the top plate and remove the top plate to obtain the adhesive rod assembly;

[0013] 10) Let the sticky rod assembly stand for a certain period of time, and then slice the silicon block in the sticky rod assembly.

[0014] Preferably, during the bonding process, a tooling is used to support the crystal tray, and a positioning mechanism is set on the tooling to position the crystal tray and each row of silicon blocks on the carrier.

[0015] For details of each step, please refer to the example.

[0016] The advantages and beneficial effects of this invention are as follows:

[0017] 1) Currently, the bonding process in the photovoltaic industry is mainly based on manual splicing and bonding, which is subject to uncontrollable human factors (such as uneven glue application, low efficiency, and inaccurate alignment). The multi-silicon block bonding process of this invention can avoid the above problems and save labor costs.

[0018] 2) Currently, the photovoltaic industry's rod bonding process involves manually bonding multiple silicon blocks, which is time-consuming, labor-intensive, and prone to fatigue and errors. This invention can automatically bond multiple silicon blocks, accurately position them, effectively improve the bonding efficiency and wafer production capacity, and is simple and intelligent to operate.

[0019] The present invention also has the following characteristics:

[0020] 1) This invention is applicable to the automatic sticking of multi-silicon blocks using half-chip, small-chip and other technologies.

[0021] 2) The present invention pre-assembles multiple silicon blocks into a silicon block group before gluing them together, which effectively improves the gluing efficiency.

[0022] 3) In this invention, the silicon blocks are classified by a thickness gauge before being assembled into silicon blocks, which shortens the subsequent rod bonding time.

[0023] 4) In the automatic sticking process, the present invention uses a six-axis robot and an electronic eye to position, place, and adjust the silicon block assembly.

[0024] 5) In the automatic sticking process, the present invention uses tooling to position the carrier board and silicon block.

[0025] 6) When the rods are attached, the gap between rows (the gap between two adjacent rows of silicon blocks) is controlled to be 1-2 mm, which can prevent the problem of bright lines on the silicon wafer caused by the failure to remove chips in time during the subsequent slicing process. Detailed Implementation

[0026] The specific embodiments of the present invention will be further described below with reference to examples. These examples are only used to more clearly illustrate the technical solutions of the present invention and should not be construed as limiting the scope of protection of the present invention.

[0027] The specific technical solution of this invention is as follows:

[0028] Example 1

[0029] A multi-silicon block bonding process includes the following steps:

[0030] 1) A triaxial adhesive applicator is used to apply adhesive to the top surface of the crystal tray, forming an adhesive layer with a thickness of 0.1 to 0.3 mm on the top surface of the crystal tray;

[0031] 2) A robotic arm is used to place the carrier plate flat on the adhesive layer on the top surface of the crystal tray; the carrier plate is a plastic plate (such as ABS plate) with a size of 166~210mm×830~850mm.

[0032] 3) A robotic arm is used to press the heavy-duty plate flat onto the carrier plate, so that the carrier plate and the crystal tray are completely in contact; the heavy-duty plate is a 35-45kg iron plate;

[0033] 4) Use a robotic arm to remove the heavy plate from the carrier plate; then use a triaxial glue applicator to apply adhesive to the top surface of the carrier plate, forming an adhesive layer with a thickness of 0.1 to 0.3 mm on the top surface of the carrier plate;

[0034] 5) Use a six-axis robot to place at least two rows of pre-prepared silicon block groups on the adhesive layer on the top surface of the carrier board, so that each row of silicon block groups is arranged side by side and there is a gap between adjacent rows of silicon block groups; the gap between adjacent rows of silicon block groups is called the row gap; the side of the silicon block group facing the carrier board is called the adhesive surface of the silicon block group; the side of the silicon block group opposite to the adhesive surface is called the outer surface of the silicon block group.

[0035] Specifically: The silicon block assembly is composed of a row of silicon blocks; the silicon blocks used in the assembly are rectangular silicon blocks cut from silicon material, which is either silicon rod or edge material produced by squaring silicon rods, and the silicon blocks can be ground; before assembling the silicon block assembly, a thickness gauge is used to measure the thickness of the silicon blocks, and the silicon blocks are classified according to multiple preset thickness ranges, and silicon blocks with thicknesses within the same preset thickness range are used to assemble the silicon block assembly; when assembling the silicon block assembly, two adjacent silicon blocks in the same silicon block assembly are separated by two release tapes, and the two release tapes are respectively close to the adhesive surface and the outer surface of the silicon block assembly (the release tapes avoid the chamfered area of ​​the silicon blocks); the gap between two adjacent silicon blocks in the same silicon block assembly is the inter-block gap; before placing the silicon block assembly on the adhesive layer on the top surface of the carrier board, the area of ​​the inter-block gap on the adhesive surface is sealed with tape, and the area of ​​the inter-block gap on the outer surface is sealed with tape.

[0036] After placing the silicon block assembly on the adhesive layer on the top surface of the carrier board, an electronic eye is used to acquire images of the silicon block assembly on the top surface of the carrier board, identify the gaps between each row of silicon block assemblies in the image, and determine whether the gaps between adjacent rows of silicon block assemblies are aligned. If the gaps between adjacent rows of silicon block assemblies are not aligned, a six-axis robot is used to fine-tune the position of the silicon block assembly on the top surface of the carrier board to align the gaps between adjacent rows of silicon block assemblies (error < 0.1 mm).

[0037] 6) Prefabricate a top plate with partitions on the bottom surface, ensuring that the partitions on the bottom surface of the top plate correspond one-to-one with the gaps between rows of silicon blocks. The thickness of the partitions is 1-2 mm. Use a robotic arm to place the top plate flat on each row of silicon blocks and insert the partitions on the bottom surface of the top plate into the corresponding gaps between rows. At this time, the top plate covers each silicon block.

[0038] 7) Use a robotic arm to apply pressure to the silicon block group on the top surface of the carrier board, so that the two adjacent rows of silicon block groups are pressed tightly against the partition between the two rows of silicon block groups; at this time, the gap between the two adjacent rows of silicon block groups is the same as the thickness of the partition between the two rows of silicon block groups, that is, the gap between the rows is 1 to 2 mm.

[0039] 8) A robotic arm is used to press the heavy-duty plate flat onto the top plate, so that each silicon block is completely attached to the carrier plate; the heavy-duty plate is a 45-55kg iron plate;

[0040] 9) Use a robotic arm to remove the heavy pressure plate on the top plate, and then remove the top plate to obtain the adhesive rod assembly;

[0041] 10) Let the sticking rod assembly stand for a certain period of time (e.g., 2.5 to 3 hours), and then slice the silicon block in the sticking rod assembly (specifically, slice the outer surface of the silicon block assembly).

[0042] Example 2

[0043] Based on Example 1, the difference is that during the stick bonding process, a tooling is used to support the crystal tray, and a positioning mechanism is set on the tooling to position the crystal tray and each row of silicon blocks on the carrier.

[0044] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A polysilicon stickering process characterized by, The method comprises the following steps: 1) a three-axis glue coating machine is used to coat the top surface of the crystal holder with a sticky plate glue, forming a sticky plate glue layer with a thickness of 0.1-0.3 mm on the top surface of the crystal holder; 2) a mechanical hand is used to place the carrier plate on the sticky plate glue layer on the top surface of the crystal holder; the carrier plate is a plastic plate with a size of 166-210 mm x 830-850 mm; 3) a mechanical hand is used to place a heavy pressing plate on the carrier plate, so that the carrier plate is completely attached to the crystal holder; the heavy pressing plate is an iron plate with a weight of 35-45 kg; 4) a mechanical hand is used to remove the heavy pressing plate on the carrier plate; then a three-axis glue coating machine is used to coat the top surface of the carrier plate with a sticky rod glue, forming a sticky rod glue layer with a thickness of 0.1-0.3 mm on the top surface of the carrier plate; 5) a six-axis mechanical hand is used to place at least two rows of silicon block groups prepared in advance on the sticky rod glue layer on the top surface of the carrier plate, so that the silicon block groups are arranged side by side, and a gap is left between adjacent two rows of silicon block groups; the gap between the adjacent two rows of silicon block groups is the row gap; the side of the silicon block group facing the carrier plate is the adhesive surface of the silicon block group; the side of the silicon block group opposite to the adhesive surface is the outer side of the silicon block group; Specifically, the silicon block group is formed by splicing a row of silicon blocks; the silicon blocks used for the silicon block group are rectangular silicon blocks cut from a silicon material, and the silicon material is a silicon rod or a side skin generated by squaring a silicon rod, and the silicon blocks can be ground down; before splicing the silicon block group, a thickness gauge is used to measure the thickness of the silicon blocks, the silicon blocks are classified according to a plurality of preset thickness ranges, and silicon blocks with the same thickness in the same preset thickness range are used to splice the silicon block group; When splicing the silicon block group, two isolation tapes are used to separate the adjacent two silicon blocks in the same silicon block group, and the two isolation tapes are respectively close to the adhesive surface and the outer side of the silicon block group; the gap between the adjacent two silicon blocks in the same silicon block group is the block gap; before placing the silicon block group on the sticky rod glue layer on the top surface of the carrier plate, the area of the block gap on the adhesive surface is closed by a tape, and the area of the block gap on the outer side is closed by a tape; After placing the silicon block group on the sticky rod glue layer on the top surface of the carrier plate, an electronic eye is used to collect images of the silicon block group on the top surface of the carrier plate, and identify the block gaps of the silicon block groups in the images, and determine whether the block gaps of the adjacent two rows of silicon block groups are aligned; If the block gaps of the adjacent two rows of silicon block groups are not aligned, the position of the silicon block group on the top surface of the carrier plate is adjusted by the six-axis mechanical hand, so that the block gaps of the adjacent two rows of silicon block groups are aligned; 6) a top plate with a partition plate on the bottom surface is prepared, and the partition plate on the bottom surface of the top plate corresponds to the row gaps of the silicon block groups one by one, and the thickness of the partition plate is 1-2 mm; a mechanical hand is used to place the top plate on the silicon block groups, and the partition plate on the bottom surface of the top plate is inserted into the corresponding row gap; at this time, the top plate covers the silicon blocks; 7) a mechanical hand is used to press the silicon block group on the top surface of the carrier plate, so that the adjacent two rows of silicon block groups are attached to the partition plate between the two rows of silicon block groups; at this time, the row gap of the adjacent two rows of silicon block groups is consistent with the thickness of the partition plate between the two rows of silicon block groups, i.e. the row gap is 1-2 mm; 8) a mechanical hand is used to place a heavy pressing plate on the top plate, so that the silicon blocks are completely attached to the carrier plate; the heavy pressing plate is an iron plate with a weight of 45-55 kg. 9) the heavy pressing plate on the top plate is removed by a mechanical hand, and the top plate is removed, so as to obtain the stick assembly; 10) the stick assembly is placed for a certain time, and the silicon block in the stick assembly is sliced.

2. The polysilicon stick-coated rod process of claim 1, wherein: In the stick process, the jig is used to bear the crystal holder, and the positioning mechanism is arranged on the jig to position the crystal holder and the silicon block group of each row of the carrier plate.