A display panel, a display device and a manufacturing method thereof

Abstract

The present application discloses a display panel, a display device and a manufacturing method thereof, relating to the field of display technologies, which can improve the leakage between pixels of a high-resolution display panel, thereby improving the crosstalk between pixels and enhancing the display effect. The display panel includes: a base layer; a plurality of light-emitting devices disposed on one side of the base layer, the light-emitting devices including a first electrode, a light-emitting layer and a second electrode, the light-emitting layer being disposed between the first electrode and the second electrode, and the first electrode being disposed between the base layer and the light-emitting layer; a micro-structure disposed between adjacent light-emitting devices, the micro-structure being configured to generate heat after absorbing laser energy, and the temperature at which the micro-structure generates heat being greater than or equal to the melting point of the light-emitting layer. In some embodiments, the temperature at which the micro-structure generates heat after absorbing laser energy is greater than or equal to the boiling point of the light-emitting layer.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a display panel, a display device, and a manufacturing method thereof. Background Art

[0002] Currently, silicon-based microdisplay organic light-emitting display panels have advantages such as miniaturization and high PPI (Pixels Per Inch), and have gradually become the focus of attention in the display field. Silicon-based microdisplay organic light-emitting display panels can be used, for example, in VR (Virtual Reality) technology and AR (Augmented Reality) technology, and can achieve excellent display effects.

[0003] However, the high-resolution pixel settings easily cause leakage between pixels, resulting in crosstalk between pixels and affecting the display effect. Summary of the Invention

[0004] Embodiments of this application provide a display panel, a display device, and a manufacturing method thereof, which can improve the leakage between pixels of a high-resolution display panel, thereby improving the crosstalk between pixels and enhancing the display effect.

[0005] In a first aspect of the embodiments of this application, a display panel is provided, including:

[0006] A base layer;

[0007] A plurality of light-emitting devices disposed on one side of the base layer, the light-emitting device including a first electrode, a light-emitting layer, and a second electrode, the light-emitting layer being disposed between the first electrode and the second electrode, and the first electrode being disposed between the base layer and the light-emitting layer;

[0008] A microstructure disposed between adjacent light-emitting devices, the microstructure being configured to absorb laser energy and generate heat, and the temperature of the heat generated by the microstructure being greater than or equal to the melting point of the light-emitting layer.

[0009] In some embodiments, the temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the boiling point of the light-emitting layer.

[0010] In some embodiments, the temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the melting points of the light-emitting layer and the second electrode.

[0011] In some embodiments, the temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the boiling points of the light-emitting layer and the second electrode.

[0012] In some embodiments, the microstructure and the first electrode are prepared through at least one same manufacturing process; and / or,

[0013] The microstructure is made of the same material as the first electrode.

[0014] In some embodiments, the microstructure includes a plurality of protrusions and a plurality of grooves, and the grooves surround the protrusions; or,

[0015] The microstructure includes a plurality of structural units, and the orthographic projections of adjacent structural units on the base layer do not overlap.

[0016] In some embodiments, when the microstructure includes a plurality of protrusions and a plurality of grooves,

[0017] The plurality of protrusions are arranged in an array; and / or,

[0018] The area of the orthographic projection of each protrusion on the base layer is the same; and / or,

[0019] The sum of the areas of the orthographic projections of all the protrusions on the base layer is equal to the sum of the areas of the orthographic projections of all the grooves on the base layer; and / or,

[0020] The shape of the orthographic projection of the protrusion on the base layer includes at least one of a polygon, a circle, an ellipse, a ring, and a polygonal ring; and / or,

[0021] The opening of the groove faces away from the base layer, and the protrusion of the protrusion faces away from the base layer;

[0022] When the microstructure includes a plurality of structural units,

[0023] The plurality of structural units are arranged in an array; and / or,

[0024] The shape of the orthographic projection of the structural unit on the base layer includes at least one of a polygon, a circle, an ellipse, a ring, and a polygonal ring.

[0025] In some embodiments, the orthographic projections of the first electrodes of adjacent light-emitting devices on the base layer do not overlap;

[0026] The orthographic projection of the microstructure on the base layer does not overlap with the orthographic projection of the first electrode on the base layer; and / or,

[0027] The orthographic projections of the microstructure and the first electrode on the base layer fall within the orthographic projection of the second electrode on the base layer.

[0028] In some embodiments, the orthographic projections of the second electrodes of at least two light-emitting devices on the base layer do not overlap; and / or,

[0029] The second electrodes of at least two of the light-emitting devices are electrically connected to each other.

[0030] In some embodiments, the display panel further includes:

[0031] A first planar layer, filling the gaps formed between adjacent light-emitting devices and disposed on a side of the microstructure away from the base layer; and / or,

[0032] A second planar layer, disposed on a side of the second electrode away from the base layer;

[0033] An encapsulation layer, disposed on a side of the second planar layer away from the base layer.

[0034] In some embodiments, the orthographic projections of the light-emitting layers of adjacent light-emitting devices on the base layer do not overlap;

[0035] Adjacent light-emitting layers are spaced apart by the first planar layer;

[0036] and / or,

[0037] There is a gap between at least two of the second electrodes, and the second electrodes with the gap therebetween are spaced apart by the first planar layer.

[0038] In some embodiments, the light-emitting devices emit the same color; or,

[0039] The light-emitting devices emit light of at least two colors; and / or,

[0040] The base layer includes at least one of glass, a silicon wafer, and a flexible material; and / or,

[0041] The microstructure includes metal; and / or,

[0042] The light reflectivity of the microstructure is less than 20%; and / or,

[0043] The light reflectivity of the first electrode is greater than 90%.

[0044] In a second aspect of the embodiments of the present application, a display device is provided, including:

[0045] The display panel as described in the first aspect.

[0046] In a third aspect of the embodiments of the present application, a method for manufacturing a display panel is provided, including:

[0047] A microstructure and a first electrode are respectively disposed on one side of a base layer, wherein the microstructure is disposed between adjacent first electrodes;

[0048] A light-emitting layer and a second electrode are disposed on a side of the first electrode away from the base layer, wherein the first electrode, the light-emitting layer, and the second electrode form a light-emitting device;

[0049] The step of disposing the light-emitting layer and the second electrode on the side of the first electrode away from the base layer includes:

[0050] The light-emitting layer is disposed on a side of the first electrode away from the base layer to obtain a first substrate;

[0051] The surface of the first substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat. The first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the microstructure is located melts and / or vaporizes;

[0052] The second electrode is disposed on the side of the first substrate facing away from the base layer after laser scanning;

[0053] Or,

[0054] The light-emitting layer and the second electrode are sequentially disposed on a side of the first electrode away from the base layer to obtain a second substrate;

[0055] The surface of the second substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat. The first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the microstructure is located melts and / or vaporizes.

[0056] In some embodiments, the step of scanning the surface of the second substrate facing away from the base layer with a laser includes:

[0057] The surface of the second substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat. The first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting points of the light-emitting layer and the second electrode, the light-emitting layer and the second electrode corresponding to the area where the microstructure is located melt and / or vaporize;

[0058] And / or,

[0059] The laser wavelength is determined according to the shape of the microstructure.

[0060] The display panel provided by the embodiment of the present application does not need to be provided with a pixel definition layer, does not affect the high-resolution pixel design, and can use the microstructure to melt the light-emitting layers of adjacent light-emitting devices during the preparation process, that is, the laser energy absorbed by the microstructure can ablate the light-emitting layer in the corresponding area, can disconnect the light-emitting layers of adjacent light-emitting devices, can solve the leakage phenomenon on the light-emitting layer between adjacent light-emitting devices, and the leakage of horizontal and vertical pixels can be improved, thereby blocking pixel crosstalk. In addition, the process of ablating the light-emitting layer has low requirements for laser scanning accuracy, the process is simple, and it is easy to implement. Description of the Drawings

[0061] Figure 1 It is a schematic partial structure diagram of a display panel provided by an embodiment of the present application;

[0062] Figure 2 It is a schematic partial structure diagram of another display panel provided by an embodiment of the present application;

[0063] Figure 3 It is a schematic cross-sectional structure diagram of a microstructure in the thickness direction provided by an embodiment of the present application;

[0064] Figure 4 It is a schematic arrangement diagram of a microstructure provided by an embodiment of the present application;

[0065] Figure 5 It is a schematic arrangement diagram of another microstructure provided by an embodiment of the present application;

[0066] Figure 6 It is a schematic arrangement diagram of yet another microstructure provided by an embodiment of the present application;

[0067] Figure 7 It is a schematic arrangement diagram of still another microstructure provided by an embodiment of the present application;

[0068] Figure 8 It is a schematic arrangement diagram of a microstructure provided by an embodiment of the present application;

[0069] Figure 9 It is a schematic arrangement diagram of another microstructure provided by an embodiment of the present application;

[0070] Figure 10 It is a schematic arrangement diagram of yet another microstructure provided by an embodiment of the present application;

[0071] Figure 11 It is a schematic cross-sectional structure diagram of another microstructure in the thickness direction provided by an embodiment of the present application;

[0072] Figure 12 It is a schematic arrangement diagram of a microstructure provided by an embodiment of the present application;

[0073] Figure 13 Another schematic diagram of the arrangement of the microstructure provided by the embodiment of the present application;

[0074] Figure 14 A schematic diagram of the optical reflectivity spectrum of a first electrode provided by the embodiment of the present application;

[0075] Figure 15 A schematic diagram of the optical reflectivity spectrum of a microstructure provided by the embodiment of the present application;

[0076] Figure 16 Another schematic diagram of the optical reflectivity spectrum of a microstructure provided by the embodiment of the present application;

[0077] Figure 17 Another schematic diagram of the optical reflectivity spectrum of a microstructure provided by the embodiment of the present application;

[0078] Figure 18 Another schematic diagram of the optical reflectivity spectrum of a microstructure provided by the embodiment of the present application;

[0079] Figure 19 A schematic diagram of the optical reflectivity spectrum of a microstructure provided by the embodiment of the present application;

[0080] Figure 20 A schematic diagram of the arrangement of a first electrode and a microstructure provided by the embodiment of the present application;

[0081] Figure 21 Another schematic diagram of the arrangement of a first electrode and a microstructure provided by the embodiment of the present application;

[0082] Figure 22 A schematic structural diagram of a second electrode provided by the embodiment of the present application;

[0083] Figure 23 Another schematic structural diagram of a second electrode provided by the embodiment of the present application;

[0084] Figure 24 Another schematic partial structural diagram of a display panel provided by the embodiment of the present application;

[0085] Figure 25 Another schematic partial structural diagram of a display panel provided by the embodiment of the present application;

[0086] Figure 26 A schematic structural diagram of a display device provided by the embodiment of the present application;

[0087] Figure 27 A schematic flow chart of a method for manufacturing a display panel provided by the embodiment of the present application. Detailed implementation manners

[0088] To better understand the technical solutions provided in the embodiments of this specification, the technical solutions in the embodiments of this specification will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific features in the embodiments of this specification and the embodiments are detailed descriptions of the technical solutions in the embodiments of this specification, rather than limitations on the technical solutions of this specification. Without conflict, the technical features in the embodiments of this specification and the embodiments can be combined with each other.

[0089] In this document, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the phrase "comprising a..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element. The term "more than two" includes two or more than two.

[0090] Currently, silicon-based microdisplay organic light-emitting display panels have advantages such as miniaturization and high PPI, and are gradually becoming the focus of attention in the display field. Silicon-based microdisplay organic light-emitting display panels can be used, for example, in VR technology and AR technology, and can achieve excellent display effects. However, the high-resolution pixel setting easily causes leakage between pixels, resulting in crosstalk between pixels and affecting the display effect.

[0091] In view of this, the embodiments of the present application provide a display panel, a display device and a manufacturing method, which can improve the leakage between pixels of a high-resolution display panel, thereby improving the crosstalk between pixels and enhancing the display effect.

[0092] In the first aspect of the embodiments of the present application, a display panel is provided. Figure 1 It is a schematic partial structural diagram of a display panel provided in the embodiments of the present application. As Figure 1As shown in the figure, the display panel provided by the embodiment of the present application includes: a base layer 100, a plurality of light-emitting devices 200, and a microstructure 300. The plurality of light-emitting devices 200 are disposed on one side of the base layer 100. The light-emitting device 200 includes a first electrode 210, a light-emitting layer 220, and a second electrode 230. The light-emitting layer 220 is disposed between the first electrode 210 and the second electrode 230, and the first electrode 210 is disposed between the base layer 100 and the light-emitting layer 220. The microstructure 300 is disposed between adjacent light-emitting devices 200. The microstructure 300 is configured to generate heat after absorbing laser energy, and the temperature of the heat generated by the microstructure 300 is greater than or equal to the melting point of the light-emitting layer 220. It should be noted that the light-emitting layer 220 emits light under the drive of the first electrode 210 and the second electrode 230 to realize the display of the picture.

[0093] Exemplarily, with reference to Figure 1 , in the process of manufacturing the display panel, the microstructure 300 and the first electrode 210 can be manufactured first, and then the light-emitting layer 220 is manufactured. After the light-emitting layer is manufactured, the surface where the light-emitting layer 220 is located is irradiated with a laser, and the surface is scanned and irradiated with the laser. Since the laser energy is large, the energy will penetrate through the light-emitting layer 220 and reach the microstructure 300. The microstructure 300 will absorb the laser energy based on the material and structural characteristics. After the microstructure 300 absorbs the laser energy, it will generate heat and convert the laser energy into heat energy. If the temperature of the heat energy is greater than or equal to the melting point of the light-emitting layer 220, the light-emitting layer 220 corresponding to the area where the microstructure 300 is located will melt and even vaporize. Since there is no microstructure on the first electrode 210, the first electrode 210 can usually reflect the laser, and the first electrode 210 will not generate heat. Therefore, the light-emitting layer 220 in the area where the first electrode 210 is located is retained. The melting and vaporization of the light-emitting layer in the area corresponding to the microstructure 300 will cause the breakage between the light-emitting layers of adjacent light-emitting devices 200. The light-emitting device 200 can be used as a sub-pixel for picture display.

[0094] It should be noted that, with reference to Figure 1 , the second electrodes 230 are connected between adjacent light-emitting devices 200, so the second electrodes 230 of all the light-emitting devices 200 can share a driving signal, which simplifies the wiring design of the driving signal lines. The independent display of different light-emitting devices 200 can be realized by the independent setting of the first electrode 210.

[0095] It should be noted that the high-resolution pixel design is likely to cause the leakage phenomenon between the light-emitting layers of adjacent pixels, resulting in crosstalk between the pixels of the display picture. The common solutions include adding a PDL (Pixel Definition Layer), and the PDL can be used to define the light-emitting layers of different light-emitting devices. However, for small-size high-resolution display panels, the setting of the PDL limits the improvement of pixel resolution.

[0096] In view of the above problems, the display panel provided by the embodiments of the present application does not require a pixel definition layer, which will not affect the high-resolution pixel design. The microstructure 300 can melt the light-emitting layer 220 of adjacent light-emitting devices 200 during the manufacturing process, that is, the laser energy absorbed by the microstructure 300 can ablate the light-emitting layer in the corresponding area, disconnect the light-emitting layers 220 of adjacent light-emitting devices 200, solve the leakage problem on the light-emitting layer 220 between adjacent light-emitting devices 200, improve the leakage of both horizontal and vertical pixels, and further block pixel crosstalk. In addition, the process of ablating the light-emitting layer 220 has low requirements for laser scanning accuracy, simple process, and is easy to implement.

[0097] It should be noted that different microstructures 300 have different absorption of laser energy, that is, the laser wavelengths corresponding to the maximum absorption rates of different microstructures 300 are different. Therefore, the laser wavelength and energy need to be adapted to the microstructure 300 to achieve a better ablation effect.

[0098] In some embodiments, the temperature of the microstructure 300 after absorbing laser energy is greater than or equal to the boiling point of the light-emitting layer 220. When the temperature of the microstructure 300 after absorbing laser energy reaches the melting point of the light-emitting layer 220, the light-emitting layer 220 can be melted. The melted light-emitting layer material can be removed or not, as long as the original continuous light-emitting layer is ablated and disconnected to achieve the effect of improving leakage. When the temperature of the microstructure 300 after absorbing laser energy reaches the boiling point of the light-emitting layer 220, the light-emitting layer 220 can be directly converted into gas and discharged from the device cavity, so that there will be no residue of the light-emitting material between adjacent light-emitting devices 200, and no other adverse risks will be brought, which can improve the yield of the display panel.

[0099] In some embodiments, the temperature of the microstructure after absorbing laser energy is greater than or equal to the melting points of the light-emitting layer and the second electrode. The light-emitting layer 220 and the second electrode 230 corresponding to the area where the microstructure 300 is located can be melted together, or even vaporized, and the second electrode 230 corresponding to the area where the microstructure 300 is located can be further disconnected, further solving the leakage along the second electrode between adjacent light-emitting devices and further improving the crosstalk problem between adjacent light-emitting devices 200.

[0100] In some embodiments, the temperature of the microstructure after absorbing laser energy is greater than or equal to the boiling points of the light-emitting layer and the second electrode, which can strengthen the ablation degree of the light-emitting layer 220 and the second electrode 230 after the conversion of laser energy and reduce the residue of the material after ablation.

[0101] Exemplarily, Figure 2 FIG. is a schematic partial structural diagram of another display panel provided by the embodiments of the present application. As Figure 2As shown, the light-emitting layer 220 and the second electrode 230 corresponding to the region where the microstructure 300 is located are ablated, and the light-emitting layer 220 and the second electrode 230 of the adjacent light-emitting devices 200 are both disconnected.

[0102] It should be noted that Figure 1 In the embodiment corresponding to the display panel shown, in the process of manufacturing the display panel, the laser scanning process can be performed after the light-emitting layer 220 is formed, or can be performed after the second electrode 230 is formed. After the second electrode 230 is formed, performing laser scanning again will not ablate the second electrode 230. Figure 2 In the embodiment corresponding to the display panel shown, in the process of manufacturing the display panel, when the laser scanning is performed after the second electrode 230 is formed, the light-emitting layer 220 and the second electrode 230 can be ablated together.

[0103] In some embodiments, the microstructure 300 and the first electrode 210 are prepared by at least one same manufacturing process, and the microstructure 300 and the first electrode 210 are made of the same material. Exemplarily, the first electrode 210 and the microstructure 300 can be arranged in the same layer, that is, the first electrode 210 and the microstructure 300 can be formed simultaneously. In addition, the micro-nano structure of the microstructure 300 can be realized by an etching process.

[0104] In some embodiments, the microstructure 300 may include a plurality of protrusions and a plurality of grooves, and the grooves surround the protrusions. Exemplarily, Figure 3 This is a schematic cross-sectional structure diagram of a microstructure in the thickness direction provided by an embodiment of the present application. As Figure 3 shown, the microstructure 300 includes a protrusion 310 and a groove 320. The number and arrangement of the grooves 320 and the protrusions 310 are only illustrative and are not specifically limited in the embodiments of the present application.

[0105] Exemplarily, Figure 4 This is a schematic arrangement diagram of a microstructure provided by an embodiment of the present application. As Figure 4 shown, the shape of the protrusion 310 is square. Figure 5 This is another schematic arrangement diagram of a microstructure provided by an embodiment of the present application. As Figure 5 shown, the shape of the protrusion 310 is a square ring. Figure 6 This is yet another schematic arrangement diagram of a microstructure provided by an embodiment of the present application. As Figure 6 shown, the shape of the protrusion 310 is a square ring, and the middle of the ring is hollowed out, and the hollowing penetrates the film layer of the microstructure. Figure 7 This is still another schematic arrangement diagram of a microstructure provided by an embodiment of the present application. As Figure 7 shown, the protrusion 310 is strip-shaped and can form a grating structure. Figure 8 This is a schematic arrangement diagram of a microstructure provided by an embodiment of the present application. As Figure 8As shown, the convex portion 310 is a strip-shaped ring. Figure 9 Another schematic diagram of the arrangement of the microstructure provided by the embodiment of the present application. As Figure 9 shown, the convex portion 310 is circular and may also be oval. Figure 10 Another schematic diagram of the arrangement of the microstructure provided by the embodiment of the present application. As Figure 10 shown, the convex portion 310 is a circular ring, and the middle of the circular ring may be hollow.

[0106] In some embodiments, referring to Figure 4-10 the schematic diagram of the arrangement of the microstructure shown, a plurality of convex portions 310 may be arranged in an array, and the spacing between the plurality of convex portions 310 is the same. The regularly arranged convex portions 310 may be more conducive to the absorption of laser energy.

[0107] In some embodiments, the area of the orthographic projection of each convex portion 310 on the base layer is the same, that is, the areas of each convex portion 310 are the same, and a regularly shaped microstructure 300 can be further obtained.

[0108] It should be noted that the shape of the convex portion 310 may also be other polygons other than rectangles, which may be regular polygons or irregular polygons, and the embodiments of the present application do not make specific limitations.

[0109] In some embodiments, the sum of the areas of the orthographic projections of all the convex portions 310 on the base layer 100 is equal to the sum of the areas of the orthographic projections of all the grooves 320 on the base layer 100. The areas of the grooves 320 and the convex portions 310 are equal, which can have a better absorption rate of laser energy and can match the process conditions with different absorption rate requirements.

[0110] In some embodiments, the opening of the groove 320 faces away from the base layer 100, and the protrusion of the convex portion 310 faces away from the base layer 100, which can be more conducive to absorbing laser energy.

[0111] In some embodiments, Figure 11 Another schematic cross-sectional structure diagram of the microstructure provided by the embodiment of the present application in the thickness direction; Figure 12 A schematic diagram of the arrangement of a microstructure provided by the embodiment of the present application. As Figure 11 and Figure 12 shown, the microstructure 300 includes a plurality of structural units 330, and the orthographic projections of adjacent structural units 330 on the base layer 100 do not overlap. That is, the hollow between the structural units 300 is continuous, and each structural unit 330 is independent and discontinuous.

[0112] Exemplarily, Figure 13 Another schematic diagram of the arrangement of the microstructure provided by the embodiment of the present application. As Figure 13 shown, the structural unit 330 is strip-shaped. AsFigure 12 As shown, the structural unit 330 is square. It should be noted that the shape of the structural unit 330 can also be other polygons, circles, ellipses or rings, etc. The shape of the structural unit 330 can refer to the shape of the convex portion 310, and the embodiments of the present application do not make specific limitations. Different shapes and arrangements of microstructures can be applied to different laser absorption rate process requirements for matching different laser devices, etc.

[0113] Exemplarily, multiple structural units 330 can be arranged in an array, and the embodiments of the present application do not make specific limitations.

[0114] Exemplarily, Figure 14 This is a schematic diagram of the light reflectivity spectrum of a first electrode provided by an embodiment of the present application. As Figure 14 shown, the abscissa is the laser wavelength, with the unit of μm, and the ordinate is the light reflectivity R of the first electrode, with the unit of percentage %.

[0115] Exemplarily, the material of the microstructure 300 can be a metal material or other materials with higher light absorption efficiency. The microstructure 300 can be a micro-nano structure, and the size of the decoupled unit in the microstructure can be at the nanometer level. The embodiments of the present application do not make specific limitations.

[0116] Exemplarily, through the microstructures patterned on the metal surface, the reflection spectra and transmission spectra of different micro-nano structures are simulated. Since the metal film layer is greater than 100 nm and the transmittance is about 0, the micro-nano structure with 100% absorption rate at a specific wavelength is selected. Figure 15 This is a schematic diagram of the light reflectivity spectrum of a microstructure provided by an embodiment of the present application. As Figure 15 shown, for the comparison of different structural dimensions of the microstructure 300 of the 2D grating structure, when the width of the two-dimensional grating is 80 nm, the height is 50 nm, and the period is 200 nm, an absorption peak appears at a wavelength of 485 nm. It is easy to understand that the smaller the reflectivity of the ordinate, the greater the absorption rate, and the absorption rate is the largest at the position corresponding to the minimum value of the reflectivity. Use the nanoimprint method to prepare the corresponding microstructure 300 in the interval area of the first electrode 210, and then evaporate the light-emitting layer 220 and prepare the second electrode 230. The second electrode 230 can be IZO (indium zinc oxide), etc. After the second electrode 230 is prepared, use a picosecond laser with a wavelength of 485 nm to scan the entire surface. The laser passes through the second electrode 230 and the light-emitting layer 220, etc., and is focused on the surface of the microstructure 300 for laser direct writing. The first electrode 210 will reflect the laser, and the reflectivity is as Figure 14 shown, and can reach 95%. The reflectivity of the microstructure 300 to the laser is approximately 0, then the laser energy absorbed by the surface of the microstructure 300 is as shown in the following formula:

[0117]

[0118] Among them, α is the material absorption coefficient, R is the laser reflectivity of the surface, tp is the laser pulse width, J is the laser energy, S(x, t) is the laser energy absorbed by the microstructure, t is the time, x is the absorption depth, A is the absorption rate, and I(t) is the emitted energy corresponding to the laser.

[0119] After the microstructure 300 absorbs the laser energy, heat conduction occurs. Since the melting and boiling points of the organic light-emitting layer are lower than those of the metal material, ablation of the light-emitting layer 220 and the second electrode 230 can be achieved by adjusting parameters such as the laser energy and the laser scanning speed, thereby realizing the blocking between pixels. The microstructure is used to increase the temperature after absorbing the laser energy and conduct heat, and the heat conduction temperature of the microstructure is greater than the melting point and / or boiling point of the light-emitting layer, and the conducted heat can thermally ablate the light-emitting layer.

[0120] Exemplarily, the laser with a central wavelength of 485 nm corresponds to an absorption peak of 485 nm on the surface of the microstructure 300. The red shift / blue shift of the absorption peak can be achieved by different structural sizes to select lasers with different wavelengths; different micro-nano structures can also be designed, such as one-dimensional grating structures, nano-column structures, nano-ring structures, nano-square-ring structures, etc., to realize the regulation of wavelength absorption rate.

[0121] Exemplarily, Figure 16 This is a schematic diagram of the light reflectivity spectrum of another microstructure provided by an embodiment of the present application. As Figure 16 shown, the microstructure 300 corresponds to a two-dimensional cylindrical structure. Under the conditions that the cylinder diameter D is 80 nm, the height H is 50 nm, and the period Period is 200 nm, the central wavelength with the highest laser absorption rate is 455 nm.

[0122] Figure 17 This is a schematic diagram of the light reflectivity spectrum of yet another microstructure provided by an embodiment of the present application. As Figure 17 shown, the microstructure 300 corresponds to a two-dimensional ring structure. Under the conditions that the outer ring diameter D is 80 nm, the inner ring diameter D_inner is 50 nm, the height H is 50 nm, and the period Period is 200 nm, the central wavelength with the highest laser absorption rate is 532 nm.

[0123] Figure 18 This is a schematic diagram of the light reflectivity spectrum of still another microstructure provided by an embodiment of the present application. As Figure 18 shown, the microstructure 300 corresponds to a grating structure. Under the conditions that the grating width D is 80 nm, the height H is 50 nm, and the period Period is 200 nm, the central wavelength with the highest laser absorption rate is 437 nm.

[0124] Figure 19 This is a schematic diagram of the light reflectivity spectrum of a microstructure provided by an embodiment of the present application. As Figure 19As shown, the microstructure 300 is a two-dimensional square ring structure, and the inner diameters D_inner of the square rings are 10 nm, 20 nm, 30 nm, 40 nm, and 50 nm respectively. The spectral curves corresponding to 20 nm and 30 nm partially overlap.

[0125] In some embodiments, the base layer 100 may include at least one of glass, a silicon wafer, and a flexible material. For a base layer of a silicon wafer, a silicon-based microdisplay panel can be fabricated without the need to provide a PDL, which can solve the problem of pixel element leakage and is more conducive to obtaining a high-resolution silicon-based microdisplay panel.

[0126] In some embodiments, the light reflectivity of the microstructure 300 is less than 20%, the absorption rate can be greater than 95%, and the light reflectivity of the first electrode 210 is greater than 90%.

[0127] In some embodiments, the orthographic projections of the first electrodes 210 of adjacent light-emitting devices 200 on the base layer 100 do not overlap. The orthographic projection of the microstructure 300 on the base layer 100 does not overlap with the orthographic projection of the first electrode 210 on the base layer 100.

[0128] Exemplarily, Figure 20 is a schematic diagram of the arrangement of a first electrode and a microstructure provided by an embodiment of the present application; Figure 21 is another schematic diagram of the arrangement of a first electrode and a microstructure provided by an embodiment of the present application. As Figure 20 shown, the microstructures 300 between adjacent first electrodes 210 are discontinuous, as Figure 21 shown, the microstructures 300 between adjacent first electrodes 210 are continuous. The adjacent first electrodes 210 are disconnected, and the microstructures 300 and the first electrodes 210 are also disconnected. This can prevent the light-emitting layer directly opposite the first electrode 210 from being ablated during the laser scanning process, ensuring the integrity of the light-emitting layer 220 of the light-emitting device 200 and guaranteeing the normal light emission of the light-emitting device 200.

[0129] Referring to Figure 1 , the orthographic projections of the microstructure 300 and the first electrode 210 on the base layer 100 fall within the orthographic projection of the second electrode 230 on the base layer 100. That is, the projection of the second electrode 230 covers the projection of the microstructure 300. There may be a connection between the second electrodes 230 of adjacent light-emitting devices 200, and a driving signal of a second electrode can be shared, saving the wiring space of signal lines.

[0130] In some embodiments, the second electrodes 230 of at least two light-emitting devices 200 are electrically connected to each other. The second electrodes 230 are disposed on a second electrode layer, and the second electrode layer is provided with a hollowed-out area. The orthographic projection of the hollowed-out area on the base layer 100 partially surrounds the orthographic projection of the corresponding first electrode 210 on the base layer 100.

[0131] Exemplarily, Figure 22 FIG. is a schematic structural diagram of a second electrode provided by an embodiment of the present application. As Figure 22 shown, the hollowed-out area on the second electrode layer corresponds to the area where the microstructure 300 is located, and the remaining area is covered with the second electrode 230. Then, the second electrodes between adjacent light-emitting devices 200 remain electrically connected, but the second electrode 230 in the area where the microstructure 300 is provided can be ablated to reduce the leakage current generated between adjacent light-emitting devices 200 via the second electrode 230 and improve the crosstalk problem of adjacent pixel elements.

[0132] In some embodiments, the orthographic projections of the second electrodes 230 of at least two light-emitting devices 200 on the base layer 100 do not overlap.

[0133] Exemplarily, Figure 23 FIG. is another schematic structural diagram of a second electrode provided by an embodiment of the present application. As Figure 23 shown, the second electrodes 230 of adjacent light-emitting devices 200 are independent of each other and not connected, which can completely solve the leakage current via the second electrode 230.

[0134] In some embodiments, the display panel further includes a first planarization layer, which fills the gap formed between adjacent light-emitting devices 200 and is disposed on the side of the microstructure 300 away from the base layer 100. There is a gap between at least two second electrodes 230, and the second electrodes 230 with the gap are spaced apart by the first planarization layer 400.

[0135] Exemplarily, Figure 24 FIG. is a schematic partial structural diagram of another display panel provided by an embodiment of the present application. As Figure 24 shown, the orthographic projections of the light-emitting layers 220 of adjacent light-emitting devices 200 on the base layer 100 do not overlap, and the adjacent light-emitting layers 220 are spaced apart by the first planarization layer 400, that is, the gaps between adjacent first electrodes 210, adjacent light-emitting layers 220, and adjacent second electrodes 230 are all filled with the first planarization layer 400, and the first planarization layer 400 covers the second electrode 230, which can be used to protect the light-emitting device 200.

[0136] In some embodiments, the display panel may further include a second planarization layer, which is disposed on the side of the second electrode 230 away from the base layer 100; and an encapsulation layer, which is disposed on the side of the second planarization layer away from the base layer 100.

[0137] Exemplarily, Figure 25 FIG. 3 is a schematic partial structural diagram of another display panel provided by an embodiment of the present application. As Figure 25 shown, if the second electrode 230 is continuous, a gap is formed between the second electrode 230 and the microstructure 300, and the first planarization layer 400 can be filled therein. The second planarization layer 500 can be covered on the second electrode 230, and the encapsulation layer 600 is disposed on the second planarization layer 500. The planarization layer can be used to planarize the undulations of the film layer structure, and the encapsulation layer 600 can protect the light-emitting device from being eroded by water and oxygen.

[0138] In some embodiments, if the colors emitted by multiple light-emitting devices are the same, the picture of the display panel is a monochromatic picture.

[0139] In some embodiments, if multiple light-emitting devices emit light of at least two colors, a display picture with two primary colors and two-color mixing can be realized, and color display can be achieved.

[0140] In some embodiments, at least two adjacent light-emitting devices emit light of different colors.

[0141] Exemplarily, the light-emitting devices of the display panel provided by the embodiment of the present application may include red light-emitting devices, green light-emitting devices, and blue light-emitting devices, so that a basic three-primary-color mixing scheme of red, green, and blue can be obtained to achieve color display. Different colors can be realized by the types of materials of the light-emitting layer.

[0142] In a second aspect of the embodiment of the present application, a display device is provided, Figure 26 FIG. 4 is a schematic structural diagram of a display device provided by an embodiment of the present application. As Figure 26 shown, the display device includes: the display panel 1000 as described in the first aspect.

[0143] It should be noted that the display device provided by the embodiment of the present application may include displays such as smart phones, computers, and televisions.

[0144] In a third aspect of the embodiment of the present application, a method for manufacturing a display panel is provided, Figure 27 FIG. 5 is a schematic flow chart of a method for manufacturing a display panel provided by an embodiment of the present application. As Figure 27 shown, the manufacturing method includes:

[0145] S701: A microstructure and a first electrode are respectively disposed on one side of the base layer, wherein the microstructure is disposed between adjacent first electrodes.

[0146] Exemplarily, the first electrode and the microstructure can be fabricated in the same layer. The microstructure can also be fabricated by an imprinting process, and the specific limitations are not made in the examples of the present application.

[0147] S702: A light-emitting layer and a second electrode are provided on a side of the first electrode away from the base layer, wherein the first electrode, the light-emitting layer, and the second electrode form a light-emitting device.

[0148] Step S702 may include:

[0149] A light-emitting layer is provided on a side of the first electrode away from the base layer to obtain a first substrate;

[0150] The side surface of the first substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat, and the first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the microstructure is located melts and / or vaporizes;

[0151] A second electrode is provided on the side of the first substrate facing away from the base layer after laser scanning.

[0152] That is, the light-emitting layer can be prepared first, and the light-emitting layer can be ablated by using laser scanning and the microstructure.

[0153] In some embodiments, step S702 may further include:

[0154] The light-emitting layer and the second electrode are sequentially provided on a side of the first electrode away from the base layer to obtain a second substrate;

[0155] The side surface of the second substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat, and the first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the microstructure is located melts and / or vaporizes.

[0156] Laser ablation can also be performed after the second electrode process, and the process flow can be set for the object of laser ablation.

[0157] In some embodiments, the scanning of the side surface of the second substrate facing away from the base layer with a laser includes:

[0158] The side surface of the second substrate facing away from the base layer is scanned with a laser so that the microstructure absorbs laser energy and generates heat, and the first electrode reflects the laser energy. When the temperature of the microstructure rises to be greater than or equal to the melting points of the light-emitting layer and the second electrode, the light-emitting layer and the second electrode corresponding to the area where the microstructure is located melt and / or vaporize.

[0159] Based on the material and structural properties of the microstructure, if the light-emitting layer and the second electrode can be ablated under the condition that the microstructure combines laser energy, the light-emitting layer and the second electrode can be ablated synchronously.

[0160] The laser wavelength is determined according to the shape of the microstructure, and different microstructure shapes can correspond to the central wavelengths at which the absorption rates of different lasers are maximized.

[0161] It should be noted that in the above embodiments, the descriptions of the respective embodiments have their own emphases. For parts not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0162] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the present application.

[0163] Although the preferred embodiments of this specification have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concepts. Therefore, the appended claims are intended to be construed as including the preferred embodiments as well as all changes and modifications that fall within the scope of this specification.

[0164] Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalent technologies, this specification is also intended to include these modifications and variations.

Claims

1. A display panel, characterized in that, Comprising: A base layer; A plurality of light-emitting devices disposed on one side of the base layer, the light-emitting device including a first electrode, a light-emitting layer, and a second electrode, the light-emitting layer being disposed between the first electrode and the second electrode, and the first electrode being disposed between the base layer and the light-emitting layer; A microstructure disposed between adjacent light-emitting devices, the microstructure being configured to generate heat after absorbing laser energy, and the temperature of the heat generated by the microstructure being greater than or equal to the melting point of the light-emitting layer.

2. The display panel according to claim 1, wherein: The temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the boiling point of the light-emitting layer.

3. The display panel according to claim 1, wherein: The temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the melting point of the light-emitting layer and the second electrode.

4. The display panel according to claim 3, wherein: The temperature of the heat generated by the microstructure after absorbing laser energy is greater than or equal to the boiling point of the light-emitting layer and the second electrode.

5. The display panel according to any one of claims 1-4, wherein: The microstructure and the first electrode are fabricated by at least one same process; and / or, The microstructure and the first electrode are made of the same material.

6. The display panel according to any one of claims 1-4, wherein: The microstructure includes a plurality of protrusions and a plurality of grooves, and the grooves surround the protrusions; or, The microstructure includes a plurality of structural units, and the orthographic projections of adjacent structural units on the base layer do not overlap.

7. The display panel according to claim 6, wherein: In the case where the microstructure includes a plurality of protrusions and a plurality of grooves, The plurality of protrusions are arranged in an array; and / or, The area of the orthographic projection of each protrusion on the base layer is the same; and / or, The sum of the areas of the orthographic projections of all the protrusions on the base layer is equal to the sum of the areas of the orthographic projections of all the grooves on the base layer; and / or, The shape of the orthographic projection of the protrusion on the base layer includes at least one of a polygon, a circle, an ellipse, a ring, and a polygon ring; and / or, The opening of the groove faces away from the base layer, and the protrusion of the protrusion faces away from the base layer; In the case where the microstructure includes a plurality of structural units, The plurality of structural units are arranged in an array; and / or, The shape of the orthographic projection of the structural unit on the base layer includes at least one of a polygon, a circle, an ellipse, a ring, and a polygon ring.

8. The display panel according to claim 1 or 2, wherein: The orthographic projections of the first electrodes of adjacent light-emitting devices on the base layer do not overlap; The orthographic projection of the microstructure on the base layer does not overlap with the orthographic projection of the first electrode on the base layer; and / or, The orthographic projections of the microstructure and the first electrode on the base layer fall within the orthographic projection of the second electrode on the base layer.

9. The display panel according to claim 3 or 4, wherein: The orthographic projections of the second electrodes of at least two of the light-emitting devices on the base layer do not overlap; and / or, The second electrodes of at least two of the light-emitting devices are electrically connected to each other.

10. The display panel according to any one of claims 1-4, characterized in that, Further comprising: A first planar layer, filling the gaps formed between adjacent light-emitting devices, and disposed on a side of the micro-structure away from the base layer; and / or, A second planar layer, disposed on a side of the second electrode away from the base layer; A packaging layer, disposed on a side of the second planar layer away from the base layer.

11. The display panel according to claim 10, wherein The orthographic projections of the light-emitting layers of adjacent light-emitting devices on the base layer do not overlap; Adjacent light-emitting layers are spaced apart by the first planar layer; and / or, There is a gap between at least two of the second electrodes, and the second electrodes with a gap therebetween are spaced apart by the first planar layer.

12. The display panel according to any one of claims 1-4, wherein The light-emitting devices emit the same color; or, The light-emitting devices emit light of at least two colors; and / or, The base layer comprises at least one of glass, silicon wafer, and flexible material; and / or, The micro-structure comprises metal; and / or, The light reflectivity of the micro-structure is less than 20%; and / or, The light reflectivity of the first electrode is greater than 90%.

13. A display device, characterized in that, Comprising: The display panel according to any one of claims 1-12.

14. A method for manufacturing a display panel, characterized in that, Comprising: A micro-structure and a first electrode are respectively disposed on one side of a base layer, wherein the micro-structure is disposed between adjacent first electrodes; A light-emitting layer and a second electrode are disposed on a side of the first electrode away from the base layer, wherein the first electrode, the light-emitting layer, and the second electrode form a light-emitting device; The step of disposing the light-emitting layer and the second electrode on the side of the first electrode away from the base layer includes: Disposing the light-emitting layer on the side of the first electrode away from the base layer to obtain a first substrate; Scanning the surface of the first substrate on the side away from the base layer with a laser, so that the micro-structure absorbs the laser energy and generates heat, the first electrode reflects the laser energy, and when the temperature of the micro-structure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the micro-structure is located melts and / or vaporizes; Disposing the second electrode on the side of the first substrate away from the base layer after laser scanning; or, Disposing the light-emitting layer and the second electrode in sequence on the side of the first electrode away from the base layer to obtain a second substrate; Scanning the surface of the second substrate on the side away from the base layer with a laser, so that the micro-structure absorbs the laser energy and generates heat, the first electrode reflects the laser energy, and when the temperature of the micro-structure rises to be greater than or equal to the melting point of the light-emitting layer, the light-emitting layer corresponding to the area where the micro-structure is located melts and / or vaporizes.

15. The method for manufacturing the display panel according to claim 14, wherein The step of scanning the surface of the second substrate on the side away from the base layer with a laser includes: The side surface of the second substrate facing away from the base layer is scanned with a laser so that the microstructures absorb the laser energy and generate heat, and the first electrode reflects the laser energy. When the temperature at which the microstructures generate heat is greater than or equal to the melting points of the light-emitting layer and the second electrode, the light-emitting layer and the second electrode corresponding to the region where the microstructures are located melt and / or vaporize; and / or The laser wavelength is determined according to the shape of the microstructures.

Images