Target and film forming equipment

Abstract

The film forming apparatus 1 includes: a target TA; an annular shielding member 30 disposed between the target TA and a plasma generating unit; and an annular shielding member 40 disposed between the target TA and a workpiece holding unit. The target TA includes: a cylindrical target member 21; and a backing tube (supporting member) 20 supporting the target TA member. The shielding member 30, the shielding member 40, and the target member 21 are stacked in the Z direction with the axis VL1 extending in the Z direction as the center axis. In the Z direction, the shielding member 30, the target member 21, and the shielding member 40 are respectively arranged in a manner separated from each other, and the inner diameter D1 of the shielding member 30 is smaller than the inner diameter D2 of the target member 21.

Description

Technical Field

[0001] The present invention relates to a target, a film forming apparatus, and a manufacturing technology of a film forming object, for example, to a technology of forming a film on a film forming object using plasma. Background Art

[0002] Japanese Patent Application Laid-Open No. 59-47728 (Patent Document 1) describes a technique in which ions contained in plasma generated by electron cyclotron resonance (ECR) collide with a target member, thereby causing target particles flying out of the target member to adhere to a film formation object to form a film on the film formation object.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 59-47728 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] In sputtering technology, ions contained in the plasma collide with the target component, so that the target particles flying out of the target component adhere to the film-forming object, thereby forming a film on the film-forming object. Shielding components are arranged above and below the target component to prevent the support component supporting the target component from being irradiated with plasma. In order to suppress short circuit with the target component, the shielding component is arranged in a manner separated from the target component. However, it is known that by continuously implementing the film-forming process, when the deposits formed on the shielding component grow, the deposits cause sputtering instability.

[0008] Other technical problems and new features will become apparent from the description of this specification and the accompanying drawings.

[0009] Technical solutions for solving technical problems

[0010] A film forming device in one embodiment includes: a workpiece holding portion for holding a film forming object; a plasma generating portion for generating plasma; a target disposed between the workpiece holding portion and the plasma generating portion; a first annular shielding member disposed between the target and the plasma generating portion; and a second annular shielding member disposed between the target and the workpiece holding portion. The target includes: a cylindrical target member; and a supporting member disposed around the target member for supporting the target member. The first shielding member, the second shielding member, and the target member are stacked in the first direction with a first axis extending in the first direction as a central axis. In the first direction, the first shielding member, the target member, and the second shielding member are disposed in a manner separated from each other, and the inner diameter of the first shielding member is smaller than the inner diameter of the target member.

[0011] In another embodiment, the film forming apparatus includes the first shielding member having an inner diameter smaller than an inner diameter of the second shielding member.

[0012] The first shielding member provided in the film forming apparatus as another embodiment includes: a first portion overlapping with the support member of the target in the first direction; and a second portion not overlapping with the target in the first direction. The thickness of the second portion is thinner than the thickness of the first portion. When a surface of the target component including a surface facing the first shielding member is taken as a reference surface, the shortest distance from the second portion to the reference surface is greater than the shortest distance from the first portion to the reference surface.

[0013] In another embodiment of the film forming device, the first shielding member has a stepped portion between the first portion and the second portion, the thickness of the portion outside the stepped portion is equal to the thickness of the first portion, and the thickness of the portion inside the stepped portion is equal to the thickness of the second portion.

[0014] The step portion included in the film forming apparatus as another embodiment overlaps with the target member in the first direction.

[0015] In another embodiment, the target-side surface of the second portion of the film forming apparatus is an inclined surface inclined with respect to a second direction perpendicular to the first direction. The inner diameter of the first shielding member is 90% or more of the inner diameter of the target member.

[0016] In the film forming apparatus as another embodiment, the inner diameter of the first shield member is 99% or less of the inner diameter of the target member.

[0017] Effects of the Invention

[0018] According to one embodiment, even when deposits are formed on the shield member, sputtering can be stabilized. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a diagram showing a schematic structure of a film forming apparatus.

[0020] Figure 2 It is shown that the use Figure 1 A flow chart of each step of a film forming method performed by the film forming apparatus shown.

[0021] Figure 3 It is shown in Figure 1 A three-dimensional diagram of the appearance structure of a target used in a film-forming device.

[0022] Figure 4 It is shown in Figure 1 A three-dimensional diagram of the appearance structure of a shielding component used in a film-forming device.

[0023] Figure 5 It is a cross-sectional view showing the positional relationship between a shielding member and a target in a film forming apparatus.

[0024] Figure 6 is shown as corresponding to Figure 5 A cross-sectional view showing the positional relationship between a shielding component and a target in a film forming apparatus of an example of study.

[0025] Figure 7 is Figure 6 A portion of the target and the shield member is shown in an enlarged cross-sectional view showing a state in which the target member is sputtered.

[0026] Figure 8 is Figure 5 A portion of the target and the shield member is shown in an enlarged cross-sectional view showing a state in which the target member is sputtered.

[0027] Fig. 9 It shows that Figure 8 An enlarged cross-sectional view of a modified example of the film forming apparatus shown.

[0028] Fig.10 It shows that Fig. 9 An enlarged cross-sectional view of a modified example of the film forming apparatus shown. DETAILED DESCRIPTION

[0029] In all the drawings for explaining the embodiments, the same reference numerals are given to the same components in principle, and their repeated descriptions are omitted. It should be noted that, in order to facilitate understanding of the drawings, hatching may be given even in the top views.

[0030] 〈Structure of film forming device〉

[0031] Figure 1 is a diagram showing a schematic structure of a film forming apparatus. Figure 1 In the embodiment, the film forming apparatus 1 has a chamber 10 as a film forming chamber. A workpiece holding portion 11 is disposed in the chamber 10, and a film forming object SUB represented by a substrate is held by the workpiece holding portion 11. The chamber 10 is provided with a gas inlet 10a and a gas exhaust port 10b.

[0032] Next, in the chamber 10, a plasma generating unit 13 is provided at a position facing the film forming object SUB held by the work holding unit 11. The plasma generating unit 13 is configured to generate plasma, and a magnetic field generating unit 14 composed of a coil is arranged around the plasma generating unit 13, for example. In addition, a waveguide 15 is connected to the plasma generating unit 13, and microwaves propagating in the waveguide 15 are introduced into the plasma generating unit 13. Furthermore, a target TA composed of a cylindrical shape is arranged at a position between the work holding unit 11 and the plasma generating unit 13 near the plasma generating unit 13, for example, and the target TA is electrically connected to a power supply 16 capable of supplying a high-frequency power supply, a direct current power supply, and a pulse power supply. Thus, the target TA is configured to be applied with a high-frequency voltage from the power supply 16. The target TA is fixed by a fixing unit 17.

[0033] In addition, the film forming apparatus 1 includes an annular shield member (first shield member) 30 and an annular shield member (second shield member) 40. When the direction from the plasma generating unit 13 toward the workpiece holding unit 11 is defined as the Z direction, the shield member 30 is provided between the target TA and the plasma generating unit 13 in the Z direction. In addition, the shield member 40 is provided between the target TA and the workpiece holding unit 11.

[0034] 〈Film Formation Method〉

[0035] Next, a film forming method using the film forming apparatus 1 will be described. Figure 2 It is shown that the use Figure 1 A flow chart of each step of a film forming method performed by the film forming apparatus shown.

[0036] First, in Figure 1 In the process, a gas represented by, for example, argon gas is introduced into the plasma generating section 13. Then, when a magnetic field is generated from the magnetic field generating section 14 disposed around the plasma generating section 13, the electrons contained in the gas introduced into the plasma generating section 13 are subjected to the Lorentz force, thereby performing circular motion. At this time, when microwaves (electromagnetic waves) having the same period (or frequency) as the period (or frequency) of the circular motion of the electrons are introduced from the waveguide 15 into the plasma generating section 13, the electrons performing circular motion resonate with the microwaves, and the energy of the microwaves is efficiently supplied to the electrons performing circular motion (electron cyclotron resonance phenomenon) ( Figure 2As a result, the kinetic energy of the electrons contained in the gas increases, and the gas is separated into positive ions and electrons. Thus, a plasma composed of positive ions and electrons is generated ( Figure 2 Step S102).

[0037] Then, in Figure 1 In the process, a high-frequency voltage is supplied to the target TA from the power supply 16. In this case, a positive potential and a negative potential are alternately applied to the target TA to which the high-frequency voltage is supplied. Here, among the positive ions and electrons constituting the plasma, the light-weight electrons are able to follow the high-frequency voltage applied to the target TA, while the heavy-weight positive ions cannot follow the high-frequency voltage. As a result, the positive potential that attracts the following electrons is offset by the negative charge of the electrons, and on the other hand, since the negative potential remains, the average value of the high-frequency power shifts from 0V to the negative potential. This means that, although a high-frequency voltage is applied to the target TA, it can be regarded as if a negative potential is applied to the target TA. As a result, the positive ions are attracted to the target TA, which is regarded as being applied with a negative potential on average, and collide with the target TA ( Figure 2 Step S103).

[0038] Next, when the positive ions collide with the target TA, the target particles constituting the target TA receive a part of the kinetic energy of the positive ions and fly out from the target TA into the inner space of the chamber 10 ( Figure 2 Then, a part of the target particles that fly out into the internal space of the chamber 10 adheres to the surface of the film forming object SUB held by the workpiece holding portion 11 ( Figure 2 Then, by repeating such a phenomenon, a large number of target particles are attached to the surface of the film-forming object SUB, and as a result, a film ( Figure 2 Step S106).

[0039] For example, when the target TA is composed of aluminum, the target particles are aluminum atoms, and the film formed on the film formation object SUB is an aluminum film. Figure 1 When oxygen gas or nitrogen gas is introduced into the gas inlet 10 a of the chamber 10 of the film forming apparatus 1 shown in the figure, while the above-mentioned film forming operation is performed, an aluminum oxide film or an aluminum nitride film can be formed on the surface of the film forming object SUB.

[0040] Similarly, for example, when the target TA is made of silicon, the target particles are silicon atoms, and the film formed on the film formation object SUB is a silicon film. Figure 1 When oxygen gas or nitrogen gas is introduced into the gas inlet 10 a of the chamber 10 of the film forming apparatus 1 shown in the figure, and the film forming operation is performed, a silicon oxide film or a silicon nitride film can be formed on the surface of the film forming object SUB.

[0041] 〈Advantages of film forming equipment〉

[0042] The film forming apparatus 1 is a method for forming a film on the film forming object SUB by irradiating a plasma flow formed by electron cyclotron resonance (ECR) and a divergent magnetic field, and applying a high-frequency voltage between a target TA and a ground, thereby causing ions in the plasma to collide with the target TA. If the film forming method is called an ECR sputtering method, the ECR sputtering method has the following advantages.

[0043] For example, in magnetron sputtering, if it is not 10 -3 Torr(10 -3 ×133.32Pa) level or higher, stable plasma cannot be obtained. In contrast, in the ECR sputtering method, stable plasma can be obtained with a pressure of 10 -4 Torr(10 -4 ×133.32 Pa) level to obtain a stable ECR plasma. In the ECR sputtering method, since particles (positive ions) in the plasma are sputtered by colliding with the target TA by a high frequency voltage, a film can be formed on the film formation object SUB at a low pressure.

[0044] In the ECR sputtering method, the film forming object SUB is irradiated with an ECR plasma flow and sputtered particles. The ions of the ECR plasma flow have an energy of 10 eV to several tens of eV, and due to the low pressure, the ion current density of the ions reaching the film forming object SUB is also large. Therefore, the ions of the ECR plasma flow give energy to the raw material particles that are sputtered and fly onto the film forming object SUB, and promote the bonding reaction between the raw material particles and oxygen, thereby improving the film quality of the film deposited on the film forming object SUB by the ECR sputtering method. In such an ECR sputtering method, there is a particular advantage that a high-quality film can be formed on the film forming object at a low substrate temperature (the temperature of the film forming object SUB).

[0045] In summary, the film forming apparatus 1 is excellent in that it can form a high-quality film. In particular, the film forming apparatus 1 is excellent in that it can form a high-quality film on the surface of the film forming object SUB without exposing the film forming object SUB to high temperature. In other words, the film forming apparatus 1 is excellent in that it can form a high-quality film on the surface of the film forming object SUB while reducing damage to the film forming object SUB.

[0046] <target>

[0047] Figure 3 It is shown in Figure 1 A three-dimensional diagram of the appearance structure of the target used in the film forming device. Figure 3As shown, the target TA is cylindrical and has a cylindrical backing tube (support member) 20 made of, for example, copper, to the inner wall of which a cylindrical target member 21 made of, for example, aluminum is bonded by a bonding material (adhesive material) not shown.

[0048] In the case of the film forming method using the cylindrical target TA configured as above, the film deposition can be reduced compared to the case of using a generally used disk-shaped target. Figure 1 In the case of film formation using a cylindrical target TA, the probability of ions (e.g., argon ions) that have bounced back after colliding with the target member 21 and colliding with the film formation object SUB is reduced compared to the case of film formation using a disc-shaped target. Therefore, in a film forming apparatus having a structure for forming a film on the surface of the film formation object SUB using a cylindrical target TA, the probability of the bounced argon ions colliding with the film formation object SUB is reduced, and as a result, the damage to the film formation object SUB caused by the collision of the bounced argon ions with the film formation object SUB can be reduced.

[0049] 〈Shielding parts〉

[0050] Figure 4 It is shown in Figure 1 A three-dimensional diagram of the appearance structure of a shielding component used in a film-forming device. Figure 5 2 is a cross-sectional view showing the positional relationship between the shielding component and the target in the film forming device. Figure 4 As shown, the shielding members 30 and 40 are each formed in a ring shape.

[0051] like Figure 4 and Figure 5 As shown in FIG. 1 , the shield member 30, the shield member 40 and the target member 21 are stacked in the Z direction with the axis (virtual line) VL1 extending in the Z direction as the central axis. Figure 1 ) side, the shielding member 30, the target member 21, and the shielding member 40 are stacked in this order, separated from each other.

[0052] The shield members 30 and 40 are protective members for suppressing collision of plasma with the backing tube 20 holding the target member 21. By arranging the shield members 30 and 40 at positions overlapping with the target member 21 in the Z direction, the frequency of collision of plasma with the backing tube 20 arranged outside the target member 21 can be reduced. As a result, sputtering of the plasma to the backing tube 20 can be suppressed.

[0053] In addition, the shielding members 30 and 40 are arranged to face each other in the Z direction across the target member 21. This can suppress the high-frequency voltage supplied to the target TA from diffusing around the target member 21. In other words, the shielding members 30 and 40 function as anti-diffusion members that prevent the high-frequency voltage supplied to the target TA from diffusing.

[0054] From the perspective of effectively playing the role of a protective component and a diffusion prevention component, it is preferred that the shielding components 30 and 40 are respectively made of a metal material. As a metal material constituting the shielding components 30 and 40, stainless steel can be exemplified, for example. In order to prevent the short circuit between the shielding components 30 and 40 and the target component 21, which are made of metal, the shielding components 30 and 40 are respectively configured to be separated from the target component 21. In other words, the shielding components 30 and 40 are respectively electrically separated from the target component 21. However, if the separation distance between the target component 21 and the shielding components 30 and 40 is extremely large, the probability of plasma invading from the gap between the target component 21 and the shielding components 30 and 40 increases, so it is preferred that the above separation distance is small. According to the research of the inventor of the present application, the separation distance G1 between the target component 21 and the shielding component 30 and the separation distance G2 between the target component 21 and the shielding component 30 are preferably less than 5 mm, and particularly preferably less than 3 mm. However, the separation distances G1 and G2 need to be greater than 0 mm, respectively.

[0055] The plasma generating unit 13 (see Figure 1 ) The plasma generated by the shield 30 passes through the opening 30H of the annular shield member 30 and collides with the target member 21. Therefore, in order to make the plasma ions collide with the target member 21 efficiently, it is considered that the inner diameter D1 of the opening 30H of the shield 30 is preferably the same as the inner diameter D2 of the cylindrical target member 21.

[0056] According to the research of the inventors of the present application, when the inner diameter D1 of the opening 30H of the shield 30 is the same as the inner diameter D2 of the cylindrical target member 21, other technical problems will arise. Figure 5 The corresponding discussion example uses Figure 6 The film forming apparatus 100 shown will be described. Figure 6 is shown as corresponding to Figure 5 A cross-sectional view showing the positional relationship between a shielding component and a target in a film forming apparatus of an example of study. Figure 7 is Figure 6A portion of the target and shielding member shown in the figure shows an enlarged cross-sectional view of the state in which the target member is sputtered. It should be noted that, except for the case where a different meaning is particularly noted, the inner diameter D2 of the target member 21 described in this specification means the inner diameter D2 of the target member 21 in a new state before the plasma irradiation treatment. As the plasma ions collide with the target member 21, the thickness of the target member 21 gradually becomes thinner, so the value of the inner diameter D2 also changes. Therefore, in principle, in this specification, the value of the inner diameter D2 of the new target member 21 is used as an indicator.

[0057] Figure 6 The film forming apparatus 100 shown in the figure is different from the target member 21 in that the inner diameter D2 of the target member 21 is the same as the inner diameter D1 of the shield member 30. Figure 5 The film forming apparatus 100 shown is different. Figure 5 The film forming apparatus 1 shown is the same. The target member 21 and the shielding member 30 are respectively arranged with the axis VL1 as the central axis. Therefore, the inner wall surface 21a of the target member 21 and the inner wall surface 30a of the shielding member 30 are respectively arranged to be flush in the Z direction (in other words, arranged in the same plane). In the case of such a structure, by making the value of the separation distance G1 less than 5 mm, it is possible to suppress the collision of plasma ions with the backing tube 20. In addition, in the Z direction, the target member 21 as a whole overlaps with the shielding member 30, so that the high-frequency voltage supplied to the target TA can be suppressed from diffusing to the periphery of the target member 21.

[0058] However, according to the research of the inventors of the present application, in the case of the film forming apparatus 100, there is a deposit 50 (see Figure 7 ) caused by the following technical problems. For example, when the target component 21 is made of a conductive material such as metal, the deposit 50 has conductivity. When the deposit 50 grows and the distance between the target component 21 or the backing tube 20 and the deposit 50 becomes closer, due to the bias voltage generated when the target component 21 discharges and the power supplied from the power supply, abnormal discharge occurs between the shielding component 30 and the deposit 50, and sometimes the film formation becomes unstable. In the case where the deposit 50 is made of an insulating material, or in the case where it is made of a semi-conductive material, if charges are accumulated in the growing deposit 50, it also becomes a cause of abnormal discharge. In addition, when the deposit 50 further grows and the target component 21 or the backing tube 20 contacts the deposit 50, the target TA and the shielding component 30 sometimes short-circuit. In order to avoid unstable film formation and short-circuiting of the shielding component 30, it is necessary to stop the film formation process and replace the shielding component 30 when the deposit 50 grows to a certain extent. For this reason, it becomes a cause of reduced efficiency of the film formation process. It should be noted that Figure 7The deposits 50 and 51 shown are respectively formed by a part of the target particles being attached to the shielding member 30 or 40. Therefore, when the film forming process is performed, the deposits 50 and 51 grow.

[0059] Therefore, as a method for improving the efficiency of the film forming process, the inventors of the present application have studied a method for reducing the growth rate of the deposits 50 and a method for preventing instability of film forming and short circuiting even when the deposits grow. Figure 8 is Figure 5 A portion of the target and the shield member is shown in an enlarged cross-sectional view showing a state in which the target member is sputtered.

[0060] exist Figure 5 In the case of the film forming apparatus 1 shown in the figure, the inner diameter D1 of the opening 30H of the shield 30 is smaller than the inner diameter D2 of the cylindrical target member 21 (as described above, the inner diameter D2 of the target member 21 in a new state before the film forming process is performed). According to this structure, it is possible to suppress the increase of the plasma density on the shield member 30 side of the target TA.

[0061] In detail, if you use Figure 1 As described above, the cylindrical target TA is arranged between the plasma generation part 13 and the film formation object SUB. In this case, the plasma density on the plasma generation part 13 side of the target TA is higher than the plasma density on the film formation object SUB side of the target TA. In other words, the plasma density on the film formation object SUB side of the target TA is lower than the plasma density on the plasma generation part 13 side of the target TA. When a difference in the distribution of the plasma density occurs near the target TA in this way, the frequency of the sputtering phenomenon caused by argon ions increases in a portion where the plasma density is relatively high.

[0062] exist Figure 7 In the case of the example of the film forming apparatus shown, the distribution of the plasma density in the Z direction near the target member 21 is higher on the shield member 30 side than on the shield member 40 side, so the frequency of the sputtering phenomenon is higher on the shield member 30 side of the target member 21 than on the shield member 40 side. As a result, when the degree of consumption of the target member 21 is compared, the consumption of the target member 21 is greater on the shield member 30 side of the target TA than on the shield member 40 side of the target TA.

[0063] Since the deposits 50 and 51 are deposits composed of target particles that are sputtered from the target member 21 , the deposit 50 formed on the shield member 30 where the frequency of sputtering is relatively high grows faster than the deposit 51 formed on the shield member 40 .

[0064] exist Figure 8 In the case of the film forming apparatus 1 shown in FIG. Figure 7By comparison, it can be seen that since the inner diameter of the annular shielding member 30 is small, the inner wall surface 30a of the shielding member 30 protrudes further inward than the inner wall surface 21a of the target member 21. In other words, in the Z direction, the target member 21 is covered by the inner eaves portion (shielding portion) 31 of the shielding member 30. Since the ions of the plasma reach the target member 21 through the opening portion inside the shielding member 30, when the shielding member 30 has the eaves portion 31, it is possible to suppress the increase of the plasma density near the shielding member 30 in the target member 21.

[0065] The results, such as Figure 8 As shown, it is possible to suppress the portion of the target member 21 on the shielding member 30 side from being consumed earlier than other portions. As a result, the growth rate of the deposit 50 can be slowed down, and thus the replacement frequency of the shielding member 30 can be reduced.

[0066] The deposits 50 are mainly formed in the opening 30H of the shielding member 30 (see Figure 5 ). Therefore, if Figure 8 As shown in FIG. 1 , by making the length L31 of the eaves 31 protruding in the X direction orthogonal to the Z direction longer, the separation distance between the target member 21 and the deposit 50 is not easily reduced even if the deposit 50 grows. For this reason, it is possible to prevent the instability of film formation applied to the target member 21 or the short circuit between the target member 21 and the shielding member 30. In other words, the shielding member 30 can be used without replacing it until the target member 21 is consumed while suppressing the instability of film formation and the short circuit of the shielding member 30. In other words, even when the deposit 50 is formed, sputtering can be stabilized.

[0067] It should be noted that the length L31 of the flange portion 31 protruding in the X direction orthogonal to the Z direction is defined as follows. That is, the surface of the backing tube 20 facing the target member 21 is defined as the target holding surface 20a. At this time, the length L31 uses the position of the shielding member 30 overlapping the extended surface of the target holding surface 20a as the reference position, and defines the distance from the reference position to the inner wall surface 30a of the shielding member 30 as the length L31. According to this definition, the length L31 is at least greater than the thickness of the target member 21 in the new state.

[0068] However, according to the research of the inventors of this application, if the Figure 5 The inner diameter D2 of the shielding member 30 shown in FIG. 1 can reduce the growth rate of the deposit 50 and suppress the occurrence frequency of sputtering. Figure 5When describing the preferred range of the inner diameter D1 of the shield member 30 based on the inner diameter D1 of the target member 21 shown, if the inner diameter D1 is 90% or more relative to the inner diameter D2, the frequency of sputtering can be suppressed. On the other hand, from the perspective of suppressing the growth of the deposits 50 due to the effect of the eaves portion 31, it is preferred that the inner diameter D1 is 99% or less relative to the inner diameter D2. In addition, from the perspective of preventing the growing deposits 50 from contacting the target member 21, it is preferred that the inner diameter D1 is 96% or less relative to the inner diameter D2.

[0069] exist Figure 8 In the example shown, the separation distances G1 and G2 are, for example, 3 mm each. The thickness of the target member 21 in a new state (the distance from the outer wall surface facing the backing tube 20 to the inner wall surface 20a) is, for example, 3 mm. The inner diameter D2 of the target member 21 (see Figure 5 ) is, for example, 120 mm. The inner diameter D1 of the shielding member 30 (see Figure 5 ) is 114 mm. In this case, the inner diameter D1 is 96% of the inner diameter D2. The length L31 of the eaves portion 31 protruding in the X direction is 3.0 mm. The thickness (length in the Z direction) of the shielding member 30 is, for example, 2 mm.

[0070] In addition, formed in Figure 5 The deposit 51 of the shielding layer 40 shown is smaller than the deposit 50. For this reason, the inner wall surface 21a of the target member 21 and the inner wall surface 40a of the shielding member 40 are arranged flush in the Z direction (in other words, arranged in the same plane). For this reason, if the inner diameter D1 of the shielding member 30 and the inner diameter D3 of the shielding member 40 are compared, it can be expressed as follows. That is, the inner diameter D1 of the shielding member 30 is smaller than the inner diameter D3 of the shielding member 40.

[0071] It should be noted that, although the illustration is omitted, Figure 5 In a modification example, there is an implementation aspect in which the inner diameter D3 of the shielding member 40 is smaller than the inner diameter D2 of the target member 21. In the case of this modification example, it is possible to suppress the instability of the high frequency voltage due to the influence of the deposit 51. However, as described above, since the deposit 51 is less likely to grow than the deposit 50, even if Figure 5 In the structure shown in FIG. 1 , the possibility of the deposit 51 growing to the extent that the high frequency voltage becomes unstable is also low. On the other hand, the target particles flying out from the target member 21 are efficiently transported to the film forming object SUB (see FIG. 1 ). Figure 1 ), the opening 40H is preferably large. Figure 8 As shown, when the inner diameter D1 of the shielding member 30 is smaller than the inner diameter D3 of the shielding member 40 , it is preferable in that the target particles can efficiently reach the film forming object SUB.

[0072] 〈Variation Example〉

[0073] Next, for Figure 5 and Figure 8 A modification of the film forming apparatus shown will be described. Fig. 9 It shows that Figure 8 The enlarged cross-sectional view of a modified example of the film forming device shown in FIG. Fig. 9 The film forming apparatus 101 shown is similar to the film forming apparatus 101 except for the differences described below. Figure 1 The film forming apparatus 1 shown in FIG. 1 is the same as the film forming apparatus 1 shown in FIG. 1 . The following describes the differences from the film forming apparatus 1 , and in principle, duplicate descriptions are omitted. Figure 4 The shielding member 30 shown in FIG. 1 is also annular. The annular shielding member 30A has a Fig. 9 The same structure as the enlarged cross section shown. Fig. 9 In order to clearly indicate the positional relationship between the target component 21 and the portion 34 in the new state, Figure 8 In contrast, the target member 21 is shown in the figure in a new state before being consumed.

[0074] Fig. 9 The film forming apparatus 101 shown is similar to the Figure 8 The film forming device 1 shown in FIG. 1 is different. That is, the shielding component 30A of the film forming device 101 has a portion (first portion) 33 that overlaps with the backing tube 20 of the target TA in the Z direction and a portion (second portion) 34 that does not overlap with the target TA in the Z direction. It should be noted that portion 34 is a portion that does not overlap with the target TA even in a new state before the target component 21 is consumed. The thickness T2 of portion 34 is thinner than the thickness T1 of portion 33. In addition, if the surface of the target component 21 that is opposite to the shielding component 30A is set as the reference plane 21b, the shortest distance from portion 34 to the reference plane 21b is greater than the shortest distance from portion 33 to the reference plane 21b. In other words, at the portion 34 that does not overlap with the target TA, the surface of the portion 34 on the target TA side is thinned and thin-walled.

[0075] When the target TA side of the portion 34 is thinned, the space between the portion 34 and the target member 21 can be increased. Since the deposit 50 is formed on the portion 34, the thinner the portion 34 is, the greater the distance between the deposit 50 and the target member 21 can be.

[0076] In the case of this modification, the separation distance between the deposit 50 and the target member 21 can be ensured in the Z direction. Figure 8 Compared with the case of the film forming apparatus 1 described above, even when the length L31 is shortened, it is possible to suppress the high frequency voltage from becoming unstable or the shield member 30A and the target member 21 from being short-circuited.

[0077] The thickness T2 of the portion 34 needs to be a thickness that does not deform the portion 34, but is preferably as thin as possible. Fig. 9 In the example shown, the thickness T1 is 2 mm and the thickness T2 is 1 mm.

[0078] In the case of the film forming apparatus 101, the portion 34 has a uniform thickness. That is, the shielding member 30A has a step portion 35 between the portion 33 and the portion 34. The thickness of the portion on the outside (outer peripheral side of the shielding member 30A) of the step portion 35 is equal to the thickness of the portion 33, and the thickness of the portion on the inside (opening side of the shielding member 30A) of the step portion 35 is equal to the thickness of the portion 34. In this way, when the thickness T2 of the portion 34 is uniform, the separation distance between the target member 21 and the deposit 50 can be ensured regardless of where the deposit 50 is formed in the portion 34.

[0079] In addition, if Fig. 9 As shown, the step portion 35 overlaps with the target member 21 in the Z direction. Fig. 9 In the modification of the step portion 35, there is also a case where the position of the step portion 35 is a position overlapping with the backing tube 20 or a position overlapping with the fixing portion 17. However, among the functions of the shielding member 30A, if the function of preventing ions from colliding with the backing tube 20 is considered, it is preferable that the separation distance between the backing tube 20 and the shielding member 30A is short. When the step portion 35 is arranged at a position overlapping with the target member 21, the separation distance between the backing tube 20 and the shielding member 30A can be reduced, and the separation distance between the portion 34 and the target member 21 can be increased.

[0080] Fig.10 It shows that Fig. 9 It should be noted that: Fig.10 The film forming apparatus 102 shown is similar to the one using Fig. 9 The film forming apparatus 101 described above is the same as the film forming apparatus 101 described above. The following describes the differences from the film forming apparatus 101, and in principle, duplicate descriptions are omitted. Figure 4 The shielding member 30 shown in FIG. 1 is also annular. The annular shielding member 30B has a Fig.10 The same structure as the enlarged cross section shown. Fig.10 In order to clearly indicate the positional relationship between the target component 21 and the portion 34 in the new state, Figure 8 In contrast, the target member 21 is shown in the figure in a new state before being consumed.

[0081] Fig.10 The film forming apparatus 102 shown in the figure is different from the film forming apparatus 102 in that the surface of the target TA side of the portion 34 is an inclined surface inclined with respect to the X direction orthogonal to the Z direction. Fig. 9 The film forming apparatus 101 shown is different. In the case of the shielding member 30B of the film forming apparatus 102, there is no Fig. 9 In the case of the shielding member 30B, the thickness T2 of the portion 34 decreases as it approaches the inner front end of the shielding member 30B. Fig.10 As shown, the starting point 36 of the inclined surface is located at a position overlapping the target member 21. In addition, the inclined surface has a uniform inclination angle with respect to the X direction. Therefore, even at the location where the thickness T2 of the portion 34 is the thickest, the thickness T2 is thinner than the thickness T1 of the portion 33.

[0082] In the case of the shielding member 30B, Fig. 9 Compared with the shielding member 30A shown in FIG. 1 , the strength of the portion 34 can be increased, so that the front end portion (close to the shielding member 30A) can be made Figure 5 In the case where the deposit 50 is particularly thickly formed at the front end portion of the shielding member 30B, Fig.10 The shielding member 30B shown is Fig. 9 The shielding member 30A shown is advantageous.

[0083] As mentioned above, the invention completed by the present inventors has been specifically described based on the embodiments thereof, but the present invention is not limited to the above embodiments, and various modifications can be made without departing from the gist of the invention.

[0084] Description of Reference Numerals

[0085] 1.100,101,102 Film forming device

[0086] 10 Chamber

[0087] 10a Gas inlet

[0088] 10b Gas exhaust port

[0089] 11 Workpiece holding unit

[0090] 13 Plasma generation unit

[0091] 14 Magnetic field generating unit

[0092] 15 Waveguide

[0093] 16 Power Supply

[0094] 17 Fixed part

[0095] 20 Backing tube (supporting member)

[0096] 20a inner wall surface

[0097] 20a Target holding surface

[0098] 21 Target components

[0099] 21a inner wall surface

[0100] 21b Reference plane

[0101] 30, 30A, 30B shielding member (first shielding member)

[0102] 30a inner wall

[0103] 30H, 40H opening

[0104] 31 Eaves (shielded part)

[0105] 33 parts (Part 1)

[0106] 34 Parts (Part 2)

[0107] 35 Steps

[0108] 36 Starting Point

[0109] 40 shielding member (second shielding member)

[0110] 40a inner wall

[0111] 50, 51 Accumulation

[0112] D1, D2, D3 inner diameter

[0113] G1, G2 separation distance

[0114] Steps S101 to S106

[0115] SUB film forming object

[0116] TA Target

[0117] VL1 axis (imaginary line).

Claims

1. A film forming device comprising: A workpiece holding portion for holding a film-forming object; A plasma generating unit for generating plasma; a target disposed between the workpiece holding portion and the plasma generating portion; An annular first shielding member is disposed between the target and the plasma generating portion; and an annular second shielding member disposed between the target and the workpiece holding portion, The target has: a cylindrical target member; and a supporting member disposed around the target member and supporting the target member, The first shield member, the second shield member, and the target member are stacked in the first direction with a first axis extending in the first direction as a central axis. In the first direction, the first shielding member, the target member, and the second shielding member are arranged to be separated from each other. The inner diameter of the first shielding member is smaller than the inner diameter of the target member, The first shielding component has: a first portion overlapping the support member of the target in the first direction; as well as a second portion, not overlapping the target in the first direction, The thickness of the second portion is thinner than the thickness of the first portion, When a surface of the target member facing the first shielding member is defined as a reference surface, the shortest distance from the second portion to the reference surface is greater than the shortest distance from the first portion to the reference surface.

2. The film forming device according to claim 1, wherein: An inner diameter of the first shielding member is smaller than an inner diameter of the second shielding member.

3. The film forming device according to claim 1, wherein: The first shielding member has a step portion between the first portion and the second portion, The thickness of the portion outside the step portion is equal to the thickness of the first portion. The thickness of the portion on the inner side of the step portion is equal to the thickness of the second portion.

4. The film forming device according to claim 3, wherein: The step portion overlaps the target member in the first direction.

5. The film forming device according to claim 1, wherein: A surface of the second portion on the target side is an inclined surface inclined with respect to a second direction perpendicular to the first direction.

6. The film forming device according to claim 1, wherein: The inner diameter of the first shielding member is 90% or more of the inner diameter of the target member.

7. The film forming device according to claim 1, wherein: An inner diameter of the first shielding member is 99% or less of an inner diameter of the target member.

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