Silicon wafer boron diffusion process data characterization system
By using timestamps, equipment IDs, and furnace tube IDs for data matching in the silicon wafer boron expansion process, the problem of mismatch between boron expansion process parameters and sheet resistance data was solved, achieving stability of silicon wafer quality and intelligent adjustment of process parameters.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU HENGYUNTAI INFORMATION TECH CO LTD
- Filing Date
- 2022-09-09
- Publication Date
- 2026-07-03
Smart Images
Figure CN116303584B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of photovoltaic tube equipment control technology, and in particular to a silicon wafer boron diffusion process data characterization system. Background Technology
[0002] The boron diffusion process is the process of diffusing boron atoms into N-type silicon wafers to form PN junctions. The quality of this process has a significant impact on the efficiency of the final solar cell. Sheet resistance is a quality indicator used to characterize the feasibility of the boron diffusion process, which indirectly affects the light conversion efficiency of the silicon wafer.
[0003] Currently, boron expansion process engineers mainly rely on personal experience to judge the consistency of the current boron expansion process based on the current boron expansion process parameters and sheet resistance test data, and to assess whether the boron expansion process parameters need to be adjusted. This is prone to human error, and the transmission of experience is often unreliable, which poses a risk to the consistent production of the boron expansion process.
[0004] Therefore, it is necessary to provide a basis for the intelligent adjustment of boron expansion process parameters to overcome the drawbacks of relying on individual process engineers' experience. However, currently, the test results of boron expansion process parameters and sheet resistance are not in the same system, and the data volume in both aspects is large, making it difficult to match sheet resistance data with boron expansion process parameters. Consequently, the sheet resistance cannot reflect the boron expansion process parameters in a timely manner, resulting in a lag in process parameter adjustment and thus affecting silicon wafer quality. Therefore, how to match sheet resistance data with boron expansion process parameters in real time is a major challenge hindering the intelligent adjustment of boron expansion process parameters. Summary of the Invention
[0005] The purpose of this invention is to disclose a silicon wafer boron expansion process data characterization system. By using feature data to match the boron expansion process data module and the sheet resistance data module, the system can intelligently utilize sheet resistance data to determine whether the boron expansion process is suitable and make timely adjustments.
[0006] This invention provides a silicon wafer boron diffusion process data characterization system, including a boron diffusion process data module and a sheet resistance data module;
[0007] The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs.
[0008] Preferably, the boron expansion process data module collects a boron expansion process dataset, which includes process end timestamp, internal coupling temperature, heating power, oxygen flow rate, furnace door nitrogen flow rate, process nitrogen flow rate, boron source flow rate, cavity pressure, and pump speed.
[0009] Preferably, the boron expansion process dataset is stored in address A in the form of a first table, and the name of the first table includes the process end timestamp, boron expansion equipment ID, furnace tube ID, and graphite boat ID.
[0010] Preferably, the sheet resistance data module collects a sheet resistance test dataset, which includes a sheet resistance test timestamp, boron expansion equipment ID, furnace tube ID, graphite boat ID, and average sheet resistance.
[0011] Preferably, when the sheet resistance test dataset and the naming of the first table match the data in terms of the boron expansion equipment ID, furnace tube ID, and graphite boat ID, the sheet resistance test timestamp is matched with the nearest process end timestamp.
[0012] Preferably, it also includes an integrated dataset, which includes a matched sheet resistance test dataset and a boron expansion process dataset.
[0013] Preferably, the first column of the integrated dataset is the sheet resistance test timestamp, the second column is the process end timestamp, the third column is the boron expansion equipment ID, the fourth column is the furnace tube ID, the fifth column is the graphite boat ID, the subsequent columns are the boron expansion process dataset, and the last column is the sheet resistance test result.
[0014] Preferably, the internal couple temperature is the median of the first internal couple temperature, the second internal couple temperature, the third internal couple temperature, the fourth internal couple temperature, the fifth internal couple temperature, and the sixth internal couple temperature.
[0015] Preferably, the heating power includes a first heating power, a second heating power, a third heating power, a fourth heating power, a fifth heating power, and a sixth heating power.
[0016] Preferably, the first heating power, the second heating power, the third heating power, the fourth heating power, the fifth heating power, and the sixth heating power are all average values of heating power.
[0017] Compared with the prior art, the beneficial effects of the present invention are:
[0018] By using the timestamp, boron diffusion equipment ID, furnace tube ID, and graphite boat ID, the data collected by the boron diffusion process data module and the data collected by the sheet resistance data module are accurately matched. On the one hand, the data collected by each sheet resistance data module can accurately correspond to the data collected by the boron diffusion process data module, accurately reflecting the adaptability of the data collected by the boron diffusion process data module, and facilitating the timely adjustment of the boron diffusion process. On the other hand, after the data collected by the boron diffusion process data module and the data collected by the sheet resistance data module are accurately matched, it is beneficial to interpret the historical parameters of the boron diffusion process subsequently, providing a basic basis for evaluating the boron diffusion equipment. Additionally, it is also beneficial to perform big data processing on the data collected by the boron diffusion process data module and the data collected by the sheet resistance data module, providing a data basis for further improving the intelligent level of the boron diffusion equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a block diagram of the silicon wafer boron diffusion process data characterization system of the present invention;
[0020] Figure 2 It is a schematic cross-sectional view of the furnace tube of the present invention.
[0021] Among them, 1. Graphite boat; 2. Resistance heating coil; 3. Furnace tube; 4. First inner couple; 5. Second inner couple; 6. Third inner couple; 7. Fourth inner couple; 8. Fifth inner couple; 9. Sixth inner couple. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0022] The present invention will be described in detail below with reference to the embodiments shown in the drawings. However, it should be noted that these embodiments are not limitations to the present invention, and any equivalent transformation or substitution in terms of function, method, or structure made by those of ordinary skill in the art based on these embodiments shall fall within the protection scope of the present invention.
[0023] The specific implementation process of the present invention will be elaborated below through multiple embodiments.
[0024] Example 1
[0025] [[ID= Twenty-seven]]Refer Figure 1 As shown, this embodiment discloses a specific implementation of a silicon wafer boron diffusion process data characterization system (hereinafter referred to as "the system").
[0026] Refer Figure 1 As shown, in this embodiment, the system includes a boron diffusion process data module and a sheet resistance data module; the data collected by the boron diffusion process data module and the data collected by the sheet resistance data module are matched through the timestamp, boron diffusion equipment ID, furnace tube ID, and graphite boat ID.
[0027] Specifically, the current silicon wafer boron expansion process collects a large amount of boron expansion process data. After the silicon wafer boron expansion is completed, a robotic arm sends the silicon wafer to the sheet resistance testing platform, which tests the sheet resistance of the silicon wafer. Currently, the data collected by the boron expansion process data module and the data collected by the sheet resistance data module are independent of each other and lack precise matching and correlation. The process still relies on the personal experience of process engineers to judge whether the boron expansion process parameters are appropriate and make adjustments based on the sheet resistance.
[0028] Additionally, see the furnace tubes of the boron expansion equipment. Figure 2 , Figure 2 This is a cross-sectional view of the furnace tube. Figure 2 The furnace tube 3 can hold a graphite boat 1 at a time. The graphite boat 1 is divided into seven temperature zones, each of which can hold a silicon wafer. Each temperature zone corresponds to a resistance heating coil 2, which is set in the furnace tube 3. In addition, there are six internal couplers in the furnace tube 3, namely the first internal coupler 4, the second internal coupler 5, the third internal coupler 6, the fourth internal coupler 7, the fifth internal coupler 8, and the sixth internal coupler 9. The first internal coupler 4 is between the first and second temperature zones, the second internal coupler 5 is between the second and third temperature zones, the third internal coupler 6 is between the third and fourth temperature zones, the fourth internal coupler 7 is between the fourth and fifth temperature zones, the fifth internal coupler 8 is between the fifth and sixth temperature zones, and the sixth internal coupler 9 is between the sixth and seventh temperature zones.
[0029] The matching principle between the data collected by the boron expansion process data module and the data collected by the sheet resistance data module is as follows: First, the boron expansion process data module collects a boron expansion process dataset, which includes the process end timestamp, internal thermocouple temperature, heating power, oxygen flow rate, furnace door nitrogen flow rate, process nitrogen flow rate, boron source flow rate, cavity pressure, and pump speed. The boron expansion process dataset is stored in the host computer and in the form of a first table at address A. The name of the first table includes the process end timestamp, boron expansion equipment ID, furnace tube ID, and graphite boat ID. (The last sentence appears to be incomplete and possibly refers to a different data point.) Address A is “…\Boron Diffusion Process Report\Bronze Diffusion Equipment No. X\Year\Month\Day\Furnace Tube Process Report\Year Month Day_Process End Time_Furnace Tube No. Y_Boat No. Z”, where “Year Month Day_Process End Time” is the process end timestamp, “Bronze Diffusion Equipment No. X” is the boron diffusion equipment ID, “Furnace Tube No. Y” is the furnace tube ID, and “Boat No. Z” is the graphite boat ID. For example, “…\Boron Diffusion Process Report\Bronze Diffusion Equipment No. 4\Year\Month\Day\Furnace Tube Process Report\Year Month Day_Process End Time_Furnace Tube No. 3_Boat No. 9109”;
[0030] Secondly, the sheet resistance data module collects the sheet resistance test dataset and stores it on the host computer. The sheet resistance test dataset includes the sheet resistance test timestamp, boron expansion equipment ID, furnace tube ID, graphite boat ID, and average sheet resistance. See Table 1 for the sheet resistance test dataset.
[0031] Table 1. Shear resistance test dataset
[0032]
[0033] In Table 1, the first row of data, "2022 / 6 / 20 22:16" is the timestamp for the sheet resistance test, "4" is the ID of the boron expansion equipment, "3" is the ID of the furnace tube, and "9109" is the ID of the graphite boat. The graphite boat ID is further subdivided into boat number and temperature zone ID. This setting can directly correspond the sheet resistance result to the specific temperature zone, and can more accurately reflect whether the process parameters of each temperature zone in the furnace tube meet the process requirements.
[0034] Ideally, when the naming of the sheet resistance test dataset and the first table matches the data in terms of the boron expansion equipment ID, furnace tube ID, and graphite boat ID, the sheet resistance test timestamp is matched with the nearest process end timestamp; specifically, using the data in terms of the boron expansion equipment ID, furnace tube ID, and graphite boat ID as an index, the matching first table is searched in the host computer, and the sheet resistance test timestamp is matched and associated with the nearest process end timestamp.
[0035] Through the above embodiments, the data collected by the boron expansion process data module and the data collected by the sheet resistance data module are accurately matched using timestamps, boron expansion equipment ID, furnace tube ID, and graphite boat ID. On the one hand, this ensures that the data collected by each sheet resistance data module accurately corresponds to the data collected by the boron expansion process data module, accurately reflecting the adaptability of the data collected by the boron expansion process data module and facilitating timely adjustments to the boron expansion process. On the other hand, the accurate matching of the data collected by the boron expansion process data module and the sheet resistance data module is beneficial for subsequent interpretation of historical parameters of the boron expansion process, providing a basis for evaluating the boron expansion equipment. In addition, it is also beneficial for big data processing of the data collected by the boron expansion process data module and the sheet resistance data module, providing a data foundation for further improving the intelligence level of the boron expansion equipment.
[0036] Example 2
[0037] Building upon Example 1, to further utilize the matched boron expansion process dataset and sheet resistance test dataset, the system creates a new integrated dataset. This integrated dataset includes the matched sheet resistance test dataset and the boron expansion process dataset. The first column of the integrated dataset is the sheet resistance test timestamp, the second column is the process end timestamp, the third column is the boron expansion equipment ID, the fourth column is the furnace tube ID, the fifth column is the graphite boat ID, subsequent columns are the boron expansion process datasets, and the last column is the average sheet resistance test result. This forms a precisely matched integrated dataset containing both boron expansion process data and sheet resistance test data. The integrated dataset helps process engineers analyze the boron expansion process data, providing a basis for adjusting process parameters, and also prepares for further big data processing of the integrated dataset.
[0038] For a more accurate representation of the boron expansion process data, please refer to [link / reference]. Figure 2 In a preferred embodiment, the internal coupling temperature is the median of the first internal coupling temperature, the second internal coupling temperature, the third internal coupling temperature, the fourth internal coupling temperature, the fifth internal coupling temperature, and the sixth internal coupling temperature; the heating power includes the first heating power, the second heating power, the third heating power, the fourth heating power, the fifth heating power, and the sixth heating power.
[0039] Based on experience with the boron expansion process, the temperature inside furnace tube 3 is relatively stable during the boron expansion process. Therefore, the median temperature of each temperature zone is taken. Specifically, the temperature of the first temperature zone is the median temperature of the first inner coupler; the temperature of the second temperature zone is the average of the median of the first inner coupler and the median of the second inner coupler; the temperature of the third temperature zone is the average of the median of the second inner coupler and the median of the third inner coupler; the temperature of the fourth temperature zone is the average of the median of the third inner coupler and the median of the fourth inner coupler; the temperature of the fifth temperature zone is the average of the median of the fourth inner coupler and the median of the fifth inner coupler; the temperature of the sixth temperature zone is the average of the median of the fifth inner coupler and the median of the sixth inner coupler; and the temperature of the seventh temperature zone is the median temperature of the sixth inner coupler.
[0040] Based on experience with the boron expansion process, in order to maintain a relatively constant temperature inside the furnace tube 3, the heating power of the seven resistance heating coils 2 is adjusted in real time according to the temperature changes of each temperature zone in the furnace tube. If a certain temperature is lower than the preset temperature, the corresponding resistance heating coil 2 will be activated. When the temperature of a certain temperature zone is higher than the preset temperature, the corresponding resistance heating coil 2 will stop heating. Therefore, the heating power of each temperature zone fluctuates greatly. To facilitate data collection and statistics, the average heating power of the first, second, third, fourth, fifth, and sixth heating power is collected respectively.
[0041] To facilitate data collection and statistics, the median values were collected for oxygen flow rate, furnace door nitrogen flow rate, process nitrogen flow rate, boron source flow rate, and chamber pressure in the boron expansion process, while the average value was collected for pump speed. Furthermore, to ensure the validity of the integrated dataset for subsequent big data processing, abnormal data needs to be deleted and stored in the abnormal data module. For example, if the target sheet resistance is 120 ohms, and the final sheet resistance test result is greater than 135 ohms or less than 105 ohms, this indicates an abnormality in the boron expansion process, and this abnormal data should be deleted from the integrated dataset and stored in the abnormal data module. Similarly, if the pump speed range is 6–11 ohms, exceeding this range is considered abnormal, and this abnormal data should be deleted from the integrated dataset and stored in the abnormal data module.
[0042] It should be further explained that the boron diffusion process includes three steps: deposition, propulsion, and oxidation. The process parameters for the deposition step described in Examples 1 and 2 are the same as those for the propulsion and oxidation steps. The only differences are in parameters such as the process end time stamp, internal coupling temperature, heating power, oxygen flow rate, furnace door nitrogen flow rate, process nitrogen flow rate, boron source flow rate, cavity pressure, and pump speed. Therefore, the matching principle between the process data and the sheet resistance test data for the propulsion and oxidation steps is the same, and will not be repeated here.
[0043] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.
[0044] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0045] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims
1. A silicon wafer boron diffusion process data characterization system, characterized in that, Includes a boron expansion process data module and a sheet resistance data module; The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment ID, furnace tube ID, and graphite boat ID. The boron expansion process data module collects boron expansion process datasets, and the sheet resistance data module collects sheet resistance test datasets. The boron expansion process dataset is stored in address A in the form of a first table. The name of the first table includes the process end timestamp, boron expansion equipment ID, furnace tube ID, and graphite boat ID. When the sheet resistance test dataset and the name of the first table match the data in terms of boron expansion equipment ID, furnace tube ID, and graphite boat ID, the sheet resistance test timestamp is matched and associated with the nearest process end timestamp using the data in terms of boron expansion equipment ID, furnace tube ID, and graphite boat ID as an index. The boron expansion process dataset includes process end timestamp, internal thermocouple temperature, heating power, oxygen flow rate, furnace door nitrogen flow rate, process nitrogen flow rate, boron source flow rate, cavity pressure, and pump speed; the sheet resistance test dataset includes sheet resistance test timestamp, boron expansion equipment ID, furnace tube ID, graphite boat ID, and average sheet resistance, where the graphite boat ID is divided into boat number and temperature zone ID. The silicon wafer boron expansion process data characterization system also includes an integrated dataset, which includes a matched sheet resistance test dataset and a boron expansion process dataset. The first column of the integrated dataset is the sheet resistance test timestamp, the second column is the process end timestamp, the third column is the boron expansion equipment ID, the fourth column is the furnace tube ID, the fifth column is the graphite boat ID, the subsequent columns are the boron expansion process datasets, and the last column is the sheet resistance test result.
2. The silicon wafer boron diffusion process data characterization system as described in claim 1, characterized in that, The internal couple temperature is the median of the first internal couple temperature, the second internal couple temperature, the third internal couple temperature, the fourth internal couple temperature, the fifth internal couple temperature, and the sixth internal couple temperature.
3. The silicon wafer boron diffusion process data characterization system as described in claim 2, characterized in that, The heating power includes a first heating power, a second heating power, a third heating power, a fourth heating power, a fifth heating power, and a sixth heating power.
4. The silicon wafer boron diffusion process data characterization system as described in claim 3, characterized in that, The average heating power of the first heating power, the second heating power, the third heating power, the fourth heating power, the fifth heating power, and the sixth heating power are collected respectively.