A composite structure detection system and detection method
By placing the EDS detector inside the objective lens and using an oblique insertion method, the problem of limited detector space position is solved, achieving efficient and reasonable distribution of multiple detectors and high-quality image acquisition, which is suitable for rapid scanning of large-area samples.
Patent Information
- Application Number
- CN202310060452.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-01-18
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2043-01-18
AI Technical Summary
In existing technologies, the spatial position of the detector in an electron microscope is limited, making it difficult to assemble multiple detectors simultaneously and to efficiently acquire various types of image information, especially in the continuous detection and synchronous data collection of large-area samples.
The EDS detector is placed inside the objective lens in an oblique insertion manner, bringing it close to the pole piece and the sample surface. Combined with a telescopic structure and control unit, this achieves a reasonable distribution of multiple detectors and efficient data acquisition.
It improves detection resolution and efficiency, enabling the simultaneous acquisition of high-quality multiple image information, and is suitable for rapid scanning of large-sized samples, saving detection time.
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Figure CN116313711B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of electron microscopy, in particular to a detection system and method of a composite structure. BACKGROUND
[0002] The electron microscope is mainly used for observing the surface morphology of the nanoscale sample. Since the scanning electron microscope relies on the intensity of the physical signal to distinguish the organizational information. The scanning electron microscope can not only observe the organizational morphology of the sample surface, but also can further expand the use function by using different accessory devices such as EDS, WDS and EBSD.
[0003] The energy dispersive spectrometer (EDS) is used to analyze the element types and content of the micro area of the material, which is used in cooperation with the scanning electron microscope and the transmission electron microscope. At present, there are many methods to realize the energy spectrum detection, for example, through the side X-ray detector, but the solid angle of the X-ray signal received by the X-ray detector is small, the collection efficiency is low, and the high-speed X-ray image cannot be obtained; although multiple X-ray detectors can increase the solid angle of the detected X-ray, the implementation method is complicated and occupies space.
[0004] The cathodoluminescence system (CL) is usually configured in the scanning electron microscope or the transmission electron microscope, which can realize the combined research of the morphology observation, the structure and the composition analysis and the cathodoluminescence spectrum, and realize the full-spectrum fluorescence scanning imaging. The electron beam spot used for cathodoluminescence excitation is very small and has high energy; compared with photoluminescence (PL), cathodoluminescence has the characteristics of high spatial resolution, high excitation energy, wide spectral range, large excitation depth, etc., and can realize full-spectrum fluorescence scanning imaging. The cathodoluminescence system combined with the scanning electron microscope can realize the combined research of the morphology observation, the structure and the composition analysis and the cathodoluminescence spectrum on the small scale of semiconductor materials and devices, fluorescent materials (geological and archaeological materials), etc., and has been widely used in the fields of semiconductor, microelectronics, materials, physics, geology, archaeology, etc. Especially in the field of luminescent properties and electronic structure of micron and nanometer scale semiconductor quantum dots, quantum wires and other fluorescent substances, the cathodoluminescence technology has important application value. At present, there are many methods to realize the detection, for example, flat insertion type: the advantages are high-efficiency condenser and light guide tube, high collection efficiency, the disadvantages are space occupation, which leads to the fact that other accessories such as BSE cannot be used at the same time; inclined insertion type: saves space, suitable for CL and SE simultaneous acquisition.
[0005] In summary, when assembling the EDS, CL and electron detector simultaneously, the spatial position of the detector is limited and it is difficult to assemble the detector at the optimal position; in addition, the types of image information to be collected are relatively large, and it is difficult to continuously detect a large-area sample and synchronously collect data, and it is not easy to achieve high efficiency.
[0006] Therefore, it is necessary to study a new composite structure detection system and detection method to overcome the shortcomings of the prior art, so as to solve or alleviate one or more of the above problems. SUMMARY
[0007] Therefore, the present application provides a composite structure detection system and detection method, which places the EDS detector inside the objective lens, improves the space utilization, and enables the EDS to be closer to the pole head and the sample surface, improves the detection resolution, and collects higher quality image data.
[0008] In one aspect, the present application provides a composite structure detection system, which comprises an electron source, an electron acceleration electrode, an objective lens, an EDS detector, a sample, a sample stage and a control unit.
[0009] The electron source is arranged at the top center, the electron acceleration electrode is arranged below the electron source, the objective lens is arranged below the electron acceleration electrode, and the sample is arranged below the objective lens; the electron beam generated by the electron source passes through the electron acceleration electrode and the objective lens in turn and reaches the surface of the sample.
[0010] The EDS detector is arranged in the objective lens in an oblique insertion manner, and the probe of the EDS detector is located at the detection port of the objective lens.
[0011] The sample is placed on the sample stage; the sample stage, the EDS detector, the electron source and the objective lens are connected with the control unit.
[0012] As described above, the aspect and any possible implementation manner are further provided, and an implementation manner is provided, wherein a via hole is arranged on the outer ring sidewall of the objective lens, the tail end of the EDS detector is located in the via hole, and the outer periphery of the EDS detector is connected with the via hole in a sealed manner.
[0013] As described above, the aspect and any possible implementation manner are further provided, and an implementation manner is provided, wherein the tail end of the EDS detector is connected with a telescopic structure, and the tail end is obliquely displaced following the telescopic action of the telescopic structure.
[0014] The telescopic structure is connected with the control unit.
[0015] In the aspect and any possible implementation manner as above, further provided is an implementation manner, the EDS detector is a detector provided with a collimator and an electron trapping well, the collimator and the electron trapping well are both arranged at the probe end, and the collimator is located at the outermost end.
[0016] The front end of the EDS detector is provided with a film of reflecting material capable of reflecting electrons.
[0017] In the aspect and any possible implementation manner as above, further provided is an implementation manner, the distance between the objective lens and the upper surface of the sample is within 5 mm.
[0018] In the aspect and any possible implementation manner as above, further provided is an implementation manner, the system further comprises an SE detector, the SE detector is arranged at the near upper end of the inner ring sidewall of the objective lens.
[0019] In the aspect and any possible implementation manner as above, further provided is an implementation manner, the system further comprises a CL fluorescence detector, the CL fluorescence detector is arranged above the sample and below the objective lens.
[0020] In another aspect, the present application provides a detection method of a detection system adopting the composite structure as above, the steps of the method comprising:
[0021] S1, moving the sample to a suitable position by controlling the action of the sample stage through a control unit;
[0022] S2, adjusting the oblique insertion position of the EDS detector and the magnification of the objective lens;
[0023] S3, turning on the electron source to irradiate the electron beam onto the upper surface of the sample;
[0024] S4, making the electron beam sequentially irradiate all the regions to be analyzed on the upper surface of the sample by controlling the specific two-dimensional motion of the sample stage in the horizontal plane through a control unit;
[0025] The specific two-dimensional motion is specifically: dividing the upper surface of the sample into a plurality of longitudinal strip-shaped regions to be measured in an equal-width manner and sequentially scanning; when scanning a single region to be measured, a zigzag scanning manner is adopted, specifically, the first end of two adjacent rows is connected or the tail end of two adjacent rows is connected;
[0026] S5, the EDS detector collects the X-rays generated after the electron beam bombards the surface of the sample and transmits the X-rays to the control unit.
[0027] In the aspect and any possible implementation manner as above, further provided is an implementation manner, the content of step S5 further comprises: arranging a CL fluorescence detector, collecting the fluorescence signal generated after the electron beam bombards the surface of the sample and transmitting the fluorescence signal to the control unit.
[0028] The SE detector is arranged to collect the secondary electrons which are rotated and lifted by the electromagnetic action of the deflection coil.
[0029] According to the aspect and any possible implementation manner described above, further provided is an implementation manner, and the specific content of adjusting the oblique insertion position of the EDS detector in step S2 comprises: controlling the telescopic structure to realize telescoping through the control unit, so as to drive the EDS detector to move along the oblique insertion direction.
[0030] Compared with the prior art, one of the technical solutions has the following advantages or beneficial effects: the EDS detector is assembled in the objective lens, so that the space inside the pole shoe is reasonably utilized, and the space utilization rate is improved; since the EDS detector is built-in, the sample stage outside the objective lens is not limited and can be lifted to be very close to the pole shoe; in addition, the EDS detector is obliquely inserted in the objective lens, and can be extended to be very close to the upper surface of the sample near the head end of the pole shoe, even to be infinitely close to the sample surface, so that the detection efficiency can be improved.
[0031] Another of the technical solutions has the following advantages or beneficial effects: in the prior art, since each detector has its own space distribution requirement, it is not easy to simultaneously deploy multiple detectors due to the limitation of space; in the present application, the EDS is built-in the objective lens, which greatly saves the external space, so that other detectors can be installed at the most suitable position to achieve the optimal detection effect; multiple detectors are simultaneously used and detected, so that more image information can be simultaneously collected, and the sample analysis is facilitated.
[0032] Another of the technical solutions has the following advantages or beneficial effects: in the present application, the EDS detector is obliquely inserted in the objective lens, so that the probe can be close to the upper surface of the sample, and the CL fluorescence detector can be installed at the optimal position, the resolution distance of the two detectors is reduced, the two detectors can be simultaneously used, the detection efficiency is increased, the time is effectively saved, and high-quality data can be obtained more quickly.
[0033] Of course, any product implementing the present application does not necessarily need to achieve all the technical effects described above. BRIEF DESCRIPTION OF DRAWINGS
[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.
[0035] Figure 1is the whole structure schematic view of the detection system of the composite structure provided by one embodiment of the present application;
[0036] Figure 2 is the whole structure schematic view of the detection system of the composite structure provided by another embodiment of the present application;
[0037] Figure 3 is the matrix detection schematic view of the traditional technology;
[0038] Figure 4 is the serial acquisition detection mode schematic view provided by one embodiment of the present application;
[0039] Figure 5 is the comparison chart of the time and speed of the traditional detection method and the detection method provided by one embodiment of the present application.
[0040] In the figure, the following are:
[0041] 1, electron source; 2, electron beam; 3, electron acceleration electrode; 4, objective lens; 5, SE detector; 6, objective lens coil; 7, EDS detector; 8, CL fluorescence detector; 9, sample; 10, deflection coil. DETAILED DESCRIPTION
[0042] In order to better understand the technical solutions of the present application, the embodiments of the present application will be described in detail below with reference to the drawings.
[0043] It should be clear that the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0044] In view of the deficiencies of the prior art, the present application provides a detection system and a detection method for a composite structure. The detection system embeds an EDS detector in an objective lens, increases the spatial position of the detector, can more reasonably distribute other detectors, efficiently utilizes the space, and at the same time, the detection efficiency is also increased. Moreover, the spatial structure is also applicable to immersion lenses and non-immersion lenses. A corresponding detection method is invented for this system, which can be combined with the system, and continuously and quickly scan large-size samples, saving detection time.
[0045] As shown in Figure 1 and Figure 2 , the detection system of the composite structure of the present application comprises an electron source 1, an electron beam 2, an electron acceleration electrode 3, an objective lens 4, an SE detector 5, an EDS detector 7, a CL fluorescence detector 8, and a sample 9 arranged on a sample stage. Figure 1 and Figure 2 The difference between them is: Figure 2The inner ring bottom of the middle objective lens has an extension part, which is an extension part of the objective lens pole, so that Figure 2 The objective lens is a submerged lens structure, Figure 1 The objective lens is a non-submerged lens structure.
[0046] Wherein, the electron source 1 is located directly above, used for generating the electron beam 2. The electron accelerating electrode 3 is arranged below the electron source 1, used for accelerating the electron beam 2. The objective lens 4 is arranged below the electron accelerating electrode 3, used for realizing focusing of the sample observation image. The CL fluorescence detector 8 is arranged below the objective lens 4 and above the sample 9, used for collecting the fluorescence signal generated by the electron beam bombardment. The SE detector 5 is arranged at the outer wall of the inner side of the objective lens, and the sample 9 is located on the bottommost sample table, and the electron beam 2 acts on the surface of the sample 9 in the vertical direction.
[0047] The inner cavity upper part of the objective lens 4 of the application is provided with the objective lens coil 6 of the objective lens. The EDS detector 7 of the application is arranged below the objective lens coil 6. The outer wall of the outer side of the objective lens 4 is provided with an opening, and the EDS detector 7 is inserted into the inside of the objective lens 4 in an inclined state; the front end (i.e. the signal collection end) of the EDS detector 7 is opposite to the detection port at the bottom of the inner side of the objective lens, and the tail end is located outside the objective lens. The opening on the side wall of the objective lens 4 is provided with a sealing ring, realizing the sealed connection between the side wall of the objective lens and the EDS detector 7. The tail part of the EDS detector 7 can be connected with the telescopic structure, and the telescopic structure drives the EDS detector 7 to realize the change and adjustment of the position through the action of the telescopic structure. The telescopic structure is fixedly connected with the outer wall of the objective lens, so as to ensure the stability of the telescopic structure in the working process. The telescopic structure can realize the telescopic action through the high-precision servo motor; or the telescopic structure can not be arranged, and the EDS detector 7 is directly fixed in the objective lens for EDS detection. The number of the openings on the outer side wall of the objective lens 4 can be multiple, and the number of the EDS detectors 7 arranged is also multiple (more than two), and the openings and the EDS detectors 7 are one-to-one corresponding. The telescopic structure is connected with the control unit, the control unit controls the telescopic action of the telescopic structure, so as to drive the EDS detector 7 to move obliquely, and adjust the distance between the EDS detector and the observation port of the objective lens. The control unit also controls the action of the sample table, drives the sample on the sample table to realize the rising, falling and two-dimensional movement in the horizontal direction.
[0048] As a preferred scheme, the distance between the objective lens 4 and the upper surface of the sample is within 5mm. The reduction of the resolution distance can greatly improve the resolution of the detection. In use, the working current of the objective lens 4 can be changed through the control unit, so as to play a role in adjusting the focal length, and the distance between the probe of the EDS detector 7 and the surface of the sample is further adjusted to adjust the overall resolution. The deflection coil 14 is part of the objective lens.
[0049] In operation, the accelerated electron beam 2 enters the objective lens 4 along the main optical axis, converges on the sample 9 after passing through the objective lens 4, and generates signal electrons. The objective lens used is of an immersion lens structure or a non-immersion lens structure. The X-rays generated by the electron beam hitting the sample surface enter the interior of the objective lens and are received by the EDS detector. The front end of the EDS detector is provided with an electron trapping well + collimator, the collimator is arranged at the front end of the EDS detector, and the electron trapping well is arranged adjacent to the collimator. The electron trapping well + collimator can block the electrons to avoid the electrons from hitting the EDS detector to generate false images and affect the image quality; the front end of the EDS detector is also provided with high-reflective material, which is arranged on the outer end face of the collimator, which can block the electrons to avoid the electrons from hitting the EDS detector to generate false images and affect the image quality, and can reflect the electrons hitting the surface. The high-reflective material can be any one or more of Au, Pt, Ag, BN and diamond, and can be arranged on the outer end face of the collimator in a coating manner. In addition, after the electrons enter the objective lens, the electrons will be deflected due to the presence of a magnetic field, so most of the electrons will not directly hit the EDS detector, and the presence of the high-reflective material can further ensure that such electrons will not hit the EDS detector, thereby further improving the image quality.
[0050] As a further embodiment, the CL fluorescence generated by the electron beam hitting the sample surface is received by the CL fluorescence detector arranged in a flat or inclined plug manner, and fluorescence detection is realized. The CL fluorescence detector can be provided with a color filter at the front end, so that a color fluorescence image can be acquired. The secondary electrons generated by the electron beam hitting the sample surface, the sample being at 0 potential, and the objective lens serving as an acceleration sleeve, the two will form a sinking electric field, so that the secondary electrons will be immediately attracted upward (in the vertical direction, the direction of the force) under the action of the electric field when flying out; then the magnetic field generated by the deflection coil of the side wall of the objective lens will cause the secondary electrons to continue to rise after winding in the magnetic field and be received by the SE detector.
[0051] In the present application, the EDS detector is arranged in the interior of the objective lens, which saves space and improves space utilization, at the same time, the EDS can be closer to the pole shoe head and closer to the sample surface in the interior of the objective lens, higher quality image data can be acquired, and the CL and SE can be used at the same time, which is convenient for analyzing the material properties.
[0052] Among them, the EDS is realized through the side type X-ray detector, but the solid angle of the X-ray signal received by the X-ray detector is small, the collection efficiency is low, and high-speed X-ray images cannot be obtained; although multiple X-ray detectors can be arranged to increase the solid angle of the detected X-rays, the implementation method is complicated and occupies space.
[0053] CL: flat insertion: the advantage is that it has high-efficiency condenser and light pipe, high collection efficiency, the disadvantage is that it occupies space, resulting in other accessories such as BSE cannot be used simultaneously; inclined insertion: space saving, suitable for CL and SE simultaneous acquisition.
[0054] The EDS detector is arranged in the objective lens, so that the space inside the pole shoe is reasonably utilized, the EDS detector is obliquely inserted in the objective lens, the probe can be close to the upper surface of the sample, the CL fluorescence detector can be flatly inserted in the optimal position, the resolution distance of the two detectors is reduced, the two detectors can be used simultaneously, the detection efficiency is increased, the large-size sample can be quickly scanned, time is saved, and high-quality data can be obtained faster.
[0055] In the application, the number of CL fluorescence detectors is greater than or equal to 1, and the number of SE detectors is greater than or equal to 1.
[0056] The application provides one example and one comparative example for the large-area continuous scanning method. The detection systems used in the example and the comparative example are the composite detection systems described above, and the scanning method is improved by the movement mode of the sample stage in the scanning process, and the scanning efficiency is improved.
[0057] Comparative example:
[0058] As Figure 3 , Figure 5 The traditional method corresponds to the figure, and the traditional technology divides the scanning area into a matrix block, such as a nine-grid matrix shown in Figure 3 , and then performs line-by-line scanning on each grid area. The specific steps include:
[0059] 1. First, use the line scanning image to scan 101 lines in the visible area 1, and the time spent is the scanning time t1;
[0060] 2. After scanning 101, the main electron beam is controlled by the deflector to move to the starting point 102 of the next scanning line, and the time spent is the electron beam return time t2 and the platform stepping time t3;
[0061] 3. Repeat the second step to scan from 101 to 110 (assuming a total of n lines are scanned) in the visible area 1, and the time spent is n (return time t2+ scanning time t1+ platform stepping time t3);
[0062] 4. After scanning the visible area 1, the picture is changed to area 2, the main electron beam moves to the starting point of the next scanning line, and the sample stage needs to move, and the time spent is the platform scanning area changing time t4;
[0063] 5. In order to improve the quality of the picture, the line average method is used to repeat the line scanning at the same position several times before the next area line scanning, which is convenient for the subsequent image splicing, and the time spent in the repeated scanning part is t5;
[0064] 6. Finally, all the average line matrices 1-9 are spliced to form the image of a large-area two-dimensional pixel array. The time spent is T1=9n*(return time t2+scanning time t1+platform stepping time t3)+9*platform replacement scanning area time t4+9*repeated scanning time t5.
[0065] Embodiment:
[0066] The present application provides a method for quickly collecting images of a large area, as shown in Figure 4 、 Figure 5 The method uses a serial collection horizontal scanning method, and the sample table moves at a constant speed in a single column scanning, always maintaining serial collection horizontal scanning. When scanning a column, the area is changed from area 1 to area 2, and finally the CL fluorescence image information collection of a large size can be completed. The entire scanning process saves the platform stepping time t3 when the electron beam is switched from line 101 to line 102; saves the repeated scanning time t4 required for splicing during the matrix scanning method; and the horizontal scanning saves part of the platform replacement scanning area time t8 compared to the matrix scanning method. The steps of the method include:
[0067] 1. First, use line scanning image to scan 101 in the visible area 1, and the time spent is scanning time t7;
[0068] 2. After scanning 101, the main electron beam is moved to the starting point 102 of the next scanning line by the deflector control, and the time spent is the electron beam return time t8, which saves the platform stepping time t3;
[0069] 3. Repeat the second step to scan from 101 to 110 (assuming a total of n rows are scanned) in the visible area 1, and the time spent is n(return time t8+scanning time t7);
[0070] 4. After scanning the visible area 1, the picture is changed to area 2, the main electron beam is moved to the starting point of the next scanning line, and the sample table needs to be moved, and the time spent is the platform stepping time t8;
[0071] 5. This method is serial collection horizontal scanning, so it saves the repeated scanning time t4 required for matrix scanning;
[0072] 6. Finally, all the images 1-3 are spliced to form the image of a large-area two-dimensional pixel array. The time spent is T1=3n*(return time t8+scanning time t7)+3*platform replacement scanning area time t8.
[0073] The above describes in detail the composite structure detection system and the detection method provided by the embodiments of the present application. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation and the application range can be changed, and the above description should not be understood as a limitation of the present application.
[0074] It should also be noted that the terms "comprising", "containing", or any other variant thereof are intended to cover non-exclusive inclusion, so that the products or systems including a series of elements not only include those elements, but also include other elements not explicitly listed or inherent to such products or systems. Without more limitations, the element defined by the sentence "comprising a" does not exclude the existence of other identical elements in the product or system including the element. "Approximately" means within an acceptable error range, and those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect.
[0075] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates otherwise. In this application, the terms "upper", "lower", "left", "right", "inner", "outer", "middle", "transverse", "vertical" and the like indicate the orientation or positional relationship shown in the drawings. In addition to being used to indicate the orientation or positional relationship, the above-mentioned terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in this application can be understood according to the specific circumstances. The term "and / or" used in this paper is only a description of the association relationship between the associated objects, which means that there can be three relationships, for example, A and / or B can mean that there are three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects have an "or" relationship.
Claims
1. A composite structure inspection system, comprising: The system comprises an electron source, an electron accelerating electrode, an objective lens, an EDS detector, a sample, a sample stage and a control unit. The electron source is arranged at the top center, the electron accelerating electrode is arranged below the electron source, the objective lens is arranged below the electron accelerating electrode, and the sample is arranged below the objective lens. The electron beam generated by the electron source passes through the electron accelerating electrode and the objective lens in turn and reaches the surface of the sample. The EDS detector is arranged in a slanting insertion manner inside the objective lens, and the probe of the EDS detector is located at the detection port of the objective lens. The sample is arranged on the sample stage, and the sample stage, the EDS detector, the electron source and the objective lens are connected with the control unit. The control unit controls the action of the sample stage to drive the sample on the sample stage to realize the rising, falling and two-dimensional movement in the horizontal direction. The outer ring sidewall of the objective lens is provided with a via, the tail end of the EDS detector is located in the via, and the outer periphery of the EDS detector is in sealing connection with the via. The number of vias is multiple, and the number of EDS detectors is also multiple. The tail end of the EDS detector is connected with a telescopic structure and is obliquely displaced following the telescopic action of the telescopic structure.
2. The composite structure probing system of claim 1, wherein, The telescopic structure is connected with the control unit. The distance between the objective lens and the upper surface of the sample is within 5 mm.
3. A detection method of a detection system employing the composite structure according to any one of claims 1 to 2, characterized by, The system further comprises a CL fluorescence detector arranged above the sample and below the objective lens. The system further comprises an SE detector arranged at the near upper end of the inner ring sidewall of the objective lens. The EDS detector is provided with a collimator and an electron trapping well, both of which are arranged at the probe end, and the collimator is located at the outermost end. The front end of the EDS detector is provided with a reflective material film capable of reflecting electrons. The steps of the method comprise: S1, moving the sample to a suitable position by controlling the action of the sample stage through the control unit; S2, adjusting the slanting insertion position of the EDS detector and the magnification of the objective lens; S3, turning on the electron source to make the electron beam irradiate the upper surface of the sample; 4. The method of claim 3, wherein, S4, making the electron beam irradiate all the analysis regions on the upper surface of the sample in sequence by controlling the sample stage to make specific two-dimensional motion in the horizontal plane through the control unit; The specific two-dimensional motion specifically comprises: dividing the upper surface of the sample into a plurality of longitudinal strip-shaped test regions in an equal width manner and sequentially scanning the test regions; For scanning a single test region, a zigzag scanning mode is adopted, specifically, the first end of each two adjacent rows is connected or the tail end of each two adjacent rows is connected; S5, the EDS detector collects the X-rays generated after the electron beam bombards the sample surface and transmits them to the control unit. The step S5 further comprises: arranging a CL fluorescence detector, collecting the fluorescence signals generated after the electron beam bombards the sample surface and transmitting them to the control unit; arranging an SE detector, collecting secondary electrons which are rotated and lifted by the electromagnetic action of the deflection coil, and the secondary electrons are the electrons generated after the electron beam bombards the sample surface.
5. The method of claim 3, wherein, The specific content of adjusting the oblique insertion position of the EDS detector in step S2 includes: controlling the telescopic structure to realize telescoping through the control unit, so as to drive the EDS detector to move along the oblique insertion direction.
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