Apparatus for processing a substrate and method for processing a substrate

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The substrate processing apparatus can include a chamber for generating a plasma in a processing space and processing a substrate using the plasma, and a measurement unit for monitoring light emitted from the plasma of the processing space, wherein the measurement unit can include a light collection unit for collecting light passing through a viewing port formed on one sidewall of the chamber, and an optical cable having a connection terminal fastened to the light collection unit formed at one end to transmit the light, wherein a measurement member capable of measuring a fastening length between the light collection unit and the optical cable is provided in the connection terminal.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0186764, filed on December 24, 2021, and Korean Patent Application No. 10-2022-0119120, filed on September 21, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and method for processing a substrate using plasma. Background Technology

[0004] Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. This plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes may include etching processes that use plasma to remove thin films formed on a substrate (such as a wafer). The etching process is performed when the ions and / or radicals of the plasma collide or react with the thin film on the substrate.

[0005] When using plasma to process a substrate in an etching process, it is important to accurately detect the endpoint of the process to avoid over-etching the substrate. Typically, in processes using plasma-processed substrates, the endpoint is determined by analyzing the characteristics of the light emitted from the plasma, which is generated within the processing space of the substrate. Specifically, the endpoint is determined by analyzing the peak value of the light emitted from the plasma.

[0006] Figure 1 A view of a typical substrate processing apparatus is shown schematically. (Reference) Figure 1 The substrate processing apparatus 1000 may include a housing 1100 having a processing space therein, a support unit 1200 for supporting the substrate W in the processing space, a gas supply unit 1300 for supplying gas to the processing space, and a plasma source 1400 for generating plasma in the processing space by exciting the gas supplied to the processing space. An observation port 1500 is formed on a sidewall of the housing 1100. Light emitted from the plasma generated in the processing space is transmitted through the observation port 1500 to a light collecting unit 1600 for collecting light. Furthermore, the light collecting unit 1600 transmits the light signal to an observation unit 1700 for observing the characteristics of the light. The observation unit 1700 can detect the end point of the processing by analyzing the characteristics of the transmitted light.

[0007] When a plasma-processed substrate W is used, various impurities B, such as particles, are generated in the processing space. These impurities B can deposit while floating in the processing space, attaching to the observation port 1500. In this case, light emitted from the plasma does not pass through the observation port 1500, and the amount of light transmitted to the light collection unit 1600 is reduced. As a result, the observation unit 1700 cannot accurately analyze the characteristics of the light.

[0008] Furthermore, when maintenance is performed on the substrate processing apparatus 1000 after processing the substrate W, various types of cables are attached and detached. For example, during the maintenance process, the optical cable 1800 connecting the light collection unit 1600 and the observation unit 1700 to transmit light signals may be disconnected. Depending on the tightness of the optical cable 1800 attached to the light collection unit 1600, the intensity of the light signal transmitted to the observation unit 1700 varies. Therefore, when the operator reconnects the optical cable 1800 to the light collection unit 1600 after maintenance, the tightness before maintenance may differ from the tightness after maintenance. Since the intensity of the light signal transmitted to the observation unit 1700 changes each time after maintenance, it is difficult for the observation unit 1700 to accurately detect the end point of the processing by analyzing the light signal. Summary of the Invention

[0009] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method capable of uniformly processing substrates.

[0010] Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can accurately detect the endpoint of the processing when using plasma to process a substrate.

[0011] Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of accurately analyzing the characteristics of light emitted from plasma.

[0012] Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can accurately analyze the characteristics of light emitted from plasma even when impurities are deposited in the observation port when using a plasma-processed substrate.

[0013] The effects of the present invention are not limited to those described above, and other effects not mentioned above will be apparent to those skilled in the art from the following disclosure.

[0014] An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The substrate processing apparatus may include: a chamber for generating plasma in a processing space and processing the substrate using the plasma; and a measuring unit for monitoring light emitted from the plasma in the processing space, wherein the measuring unit may include: a light collecting unit for collecting light passing through an observation port formed on a side wall of the chamber; and an optical cable having a connection terminal fastened to the light collecting unit formed at one end for transmitting light, wherein a measuring member capable of measuring the fastening length between the light collecting unit and the optical cable is disposed in the connection terminal.

[0015] According to an exemplary embodiment, the measuring component may include a scale indicating the longitudinal direction of the optical cable.

[0016] According to an exemplary embodiment, the measurement unit may further include an analysis unit connected to the other end of the optical cable to analyze the light transmitted from the light collection unit and to analyze the peak data of the light to detect the endpoint of the processing.

[0017] According to an exemplary implementation, the peak data can be varied based on the fastening length.

[0018] According to an exemplary implementation, the fastening length and peak data can be proportional to each other.

[0019] According to an exemplary implementation, when performing the process, the operator can collect peak data based on the fastening length and record the collected peak data as standardized data.

[0020] According to an exemplary implementation, the operator can change the fastening length so that the currently detected peak data is calibrated to normal peak data under normal conditions based on standardized data.

[0021] According to an exemplary embodiment, the connection terminal may have the same longitudinal direction as the longitudinal direction of the optical cable, and the connection terminal is fixed to a wall of the light collection unit, and a scale may be indicated from one end of the connection terminal to the other end.

[0022] According to an exemplary embodiment, the measuring component may include a distance sensor disposed on one side of the connection terminal and measuring the distance to the light collecting unit connected to the connection terminal.

[0023] According to an exemplary embodiment, the chamber may further include: a support unit for supporting a substrate in the processing space; a gas supply unit for supplying gas to the processing space; and a plasma source for exciting the gas.

[0024] Another exemplary embodiment of the present invention provides a substrate processing method for processing a substrate by generating plasma in a processing space within a chamber. This substrate processing method may include analyzing peak data of light emitted from the plasma generated in the processing space when the substrate is being processed in the processing space, to detect the end point of the processing, wherein the peak data is detected based on the fastening length by measuring the fastening length between a light-collecting unit for collecting light and an optical cable fastened to the light-collecting unit.

[0025] According to an exemplary implementation, the peak data can be varied based on the fastening length.

[0026] According to an exemplary implementation, the fastening length and peak data can be proportional to each other.

[0027] According to an exemplary implementation, during processing, the operator can collect peak data based on the fastening length and record the collected peak data as standardized data.

[0028] According to an exemplary implementation, the peak data can change as processing is performed, and the operator can change the fastening length based on standardized data to calibrate the peak data that will change as processing is performed to the normal peak data under normal conditions.

[0029] According to an exemplary implementation, peak data can be altered by impurities deposited in the observation port, allowing light in the processing space to pass through the observation port.

[0030] According to an exemplary implementation, the peak data may change after processing is performed or after maintenance of the chamber.

[0031] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The substrate processing apparatus may include: a chamber having an observation port and a processing space therein; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying gas to the processing space; a plasma source for generating plasma by exciting the gas; and a measurement unit for monitoring light emitted from the plasma, wherein the measurement unit includes: a light collecting unit for collecting light passing through the observation port; an analysis unit for detecting the endpoint of the processing by analyzing peak data of the light transmitted from the light collecting unit; and an optical cable connected to the light collecting unit and the analysis unit respectively to transmit light from the light collecting unit to the analysis unit, wherein a connection terminal is formed at one end of the optical cable fastened to the light collecting unit, and a measuring member capable of measuring the fastening length between the light collecting unit and the optical cable is disposed in the connection terminal.

[0032] According to an exemplary embodiment, the measuring component may include a scale indicated on the connection terminal along the longitudinal direction of the connection terminal, and the connection terminal is fastened to a sidewall of the light collecting unit.

[0033] According to an exemplary implementation, the peak data can be changed according to the fastening length. During the processing, the operator can collect the peak data according to the fastening length and record the collected peak data as standardized data. The operator can also change the fastening length so that the currently detected peak data is calibrated to normal peak data under normal conditions based on the standardized data.

[0034] According to an exemplary embodiment of the present invention, the substrate can be processed uniformly.

[0035] Furthermore, according to an exemplary embodiment of the present invention, the endpoint of the process can be accurately detected when using plasma.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the characteristics of light emitted from plasma can be accurately analyzed.

[0037] Furthermore, according to an exemplary embodiment of the present invention, even if impurities are deposited in the observation port when using a plasma-processed substrate, the characteristics of the light emitted from the plasma can be accurately analyzed.

[0038] Furthermore, according to an exemplary embodiment of the present invention, when using a plasma processing substrate, by standardizing the peak light data based on the coupling length between the optical cable and the measurement unit, the characteristics of the light can be accurately analyzed even after maintenance is performed.

[0039] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0040] Figure 1 A view of a typical substrate processing apparatus is shown schematically.

[0041] Figure 2 A view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0042] Figure 3 To illustrate, according to Figure 2 A view of the process chamber of an exemplary embodiment.

[0043] Figure 4 To illustrate, according to Figure 3 A view of the connection terminals and measuring components of an exemplary embodiment.

[0044] Figure 5 To illustrate, according to Figure 4 A view showing the state of the connection terminals of an exemplary embodiment connected to the light collection unit.

[0045] Figure 6 A graph illustrating standardized data, currently detected peak data, and peak data under abnormal conditions according to an exemplary embodiment of the present invention is provided.

[0046] Figure 7 To illustrate, according to Figure 3 A view of the connection terminals and measuring components of another exemplary embodiment.

[0047] Figure 8 To illustrate, according to Figure 7 A view showing the state of the connection terminals of an exemplary embodiment connected to the light collection unit. Detailed Implementation

[0048] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Various modifications to the exemplary embodiments of the invention are possible, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. Exemplary embodiments are provided to provide a more complete description of the invention to those skilled in the art. Therefore, the shapes, etc., of components in the drawings are exaggerated for clearer illustration.

[0049] Terms such as "first" and "second" are used to describe various constituent elements, but these constituent elements are not limited by these terms. These terms are only used to distinguish one component from other components. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element.

[0050] The appendix will be referenced below. Figures 2 to 8 Exemplary embodiments of the present invention will be described in more detail below.

[0051] Figure 2 A view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes. Reference Figure 2 According to an exemplary embodiment of the present invention, the substrate processing apparatus 1 may include a loading port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a loading locking chamber 40, and a process chamber 50.

[0052] Loading port 10 can be located on one side of the atmospheric pressure transfer module 20, which will be described later. At least one loading port 10 can be provided. The number of loading ports 10 can be increased or decreased depending on process efficiency and floor space requirements. A container F according to an exemplary embodiment of the invention can be placed in the loading port 10.

[0053] Container F can be loaded onto or unloaded from loading port 10 via a conveying device (not shown) such as an overhead hoist transport (OHT), an overhead conveyor, or an automated guided vehicle, or by an operator. Container F can include various types of containers depending on the type of items to be stored. For example, a sealed container such as a front-open unified pod (FOUP) can be used as container F.

[0054] The atmospheric pressure transmission module 20 and the vacuum transmission module 30 can be disposed in the first direction 2. In the following text, when viewed from above, the direction perpendicular to the first direction 2 is defined as the second direction 4. Furthermore, the direction perpendicular to the plane comprising the first direction 2 and the second direction 4 is defined as the third direction 6. For example, the third direction 6 can refer to a direction perpendicular to the ground.

[0055] The atmospheric pressure transfer module 20 can transfer the substrate W between the container F and the loading locking chamber 40 (described later). For example, the atmospheric pressure transfer module 20 can remove the substrate W from the container F and transfer the substrate W to the loading locking chamber 40, or it can remove the substrate W from the loading locking chamber 40 and transfer the substrate W to the container F.

[0056] The atmospheric pressure transfer module 20 may include a transfer frame 220 and a first transfer manipulator 240. The transfer frame 220 may be disposed between the loading port 10 and the loading locking chamber 40. The loading port 10 may be connected to the transfer frame 220. The interior of the transfer frame 220 may be maintained at atmospheric pressure.

[0057] A transfer track 230 and a first transfer robot 240 are disposed within a transfer frame 220. The longitudinal direction of the transfer track 230 and the longitudinal direction of the transfer frame 220 may be horizontal to each other. For example, the longitudinal direction of the transfer track 230 may be formed along a second direction 4. The first transfer robot 240 may be located on the transfer track 230.

[0058] A first transfer robot 240 transfers substrate W. The first transfer robot 240 can transfer substrate W between a container F disposed on a loading port 10 and a loading locking chamber 40 (described later). The first transfer robot 240 can move forward and backward along a transfer track 230 in a second direction 4. The first transfer robot 240 can move in a vertical direction (e.g., a third direction 6). The first transfer robot 240 has a first transfer hand 242, which can move forward, backward, or rotate in a horizontal plane. At least one first transfer hand 242 can be provided. The substrate W is disposed on the first transfer hand 242. A plurality of first transfer hands 242 can be spaced apart from each other in the third direction 6.

[0059] The vacuum transfer module 30 may be disposed between the loading locking chamber 40 and the process chamber 50 (described later). The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340.

[0060] The interior of the transfer chamber 320 can be maintained under a vacuum pressure atmosphere. A second transfer robot 340 can be disposed in the transfer chamber 320. For example, the second transfer robot 340 can be disposed at the center of the transfer chamber 320. The second transfer robot 340 transfers the substrate W between the loading locking chamber 40 and the process chamber 50 (described later). In addition, the second transfer robot 340 transfers the substrate W between the process chambers 50. The second transfer robot 340 can move in the vertical direction. The second transfer robot 340 has a second transfer hand 342, which moves forward, backward, or rotates in the horizontal plane. At least one second transfer hand 342 can be provided. The substrate W is disposed on the second transfer hand 342. A plurality of second transfer hands 342 can be spaced apart from each other in a third direction 6.

[0061] At least one process chamber 50 (described later) may be connected to the transfer chamber 320. According to an exemplary embodiment, the transfer chamber 320 may be configured in a polygonal shape. A loading locking chamber 40 and process chambers 50 (described later) may be disposed around the transfer chamber 320. Unlike the above, the shape of the transfer chamber 320 and the number of process chambers 50 may be modified and configured according to user or process requirements.

[0062] A loading and locking chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320. The loading and locking chamber 40 has a buffer space between the transfer frame 220 and the transfer chamber 320, in which substrates W are exchanged. For example, substrates W that have undergone a predetermined process in the process chamber 50 may be temporarily held in the loading and locking chamber 40. Furthermore, substrates W transported from the container F and subjected to a predetermined process may be temporarily held in the loading and locking chamber 40.

[0063] As described above, the interior of the transfer frame 220 can be maintained at atmospheric pressure, and the interior of the transfer chamber 320 can be maintained at vacuum pressure. A loading locking chamber 40 can be disposed between the transfer frame 220 and the transfer chamber 320, allowing the internal atmosphere to switch between atmospheric pressure and vacuum pressure.

[0064] Multiple process chambers 50 can be provided. Each process chamber 50 can be a chamber for performing a predetermined process on a substrate W. According to an exemplary embodiment of the invention, the process chamber 50 can use plasma to process the substrate W. For example, the process chamber 50 can be a chamber for performing an etching process for removing a thin film on the substrate W using plasma, a deposition process for forming a thin film on the substrate W, or a dry cleaning process. Furthermore, the process chamber 50 can be a chamber for performing an atomic layer deposition (ALD) process that alternately supplies different types of gases and deposits atomic layers on the substrate W using plasma. However, this disclosure is not limited thereto, and the plasma processing process performed in the process chamber 50 can be modified to various known plasma processing processes.

[0065] Figure 3 To illustrate, according to Figure 2 A view of the chamber in an exemplary embodiment. (Reference) Figure 3 The process chamber 50 may include a housing 500, a support unit 600, a gas supply unit 700, a plasma source 800, and a measurement unit 900.

[0066] The housing 500 can be a chamber having space within it. Therefore, the housing 500 can be referred to as a chamber. The internal space of the housing 500 can be used as a processing space for processing the substrate W therein. The housing 500 can have a shape with an open top surface. For example, the housing 500 can have a cylindrical shape with an open top surface. The open top surface of the housing 500 can be sealed by a cover 550 (described later). The processing space 501 can be maintained in a substantially vacuum atmosphere when processing the substrate W. The material of the housing 500 can include aluminum. In addition, the housing 500 can be grounded.

[0067] According to one exemplary embodiment, a liner may be disposed inside the housing 500. The liner (not shown) may have a cylindrical shape with open upper and lower surfaces. The liner (not shown) may be configured to contact the inner wall surface of the housing 500. The liner (not shown) may minimize damage to the inner wall of the housing 500 from plasma. Unlike the embodiment described above, the liner (not shown) may not be disposed inside the housing 500.

[0068] An opening (not shown) is formed in the side wall of the housing 500. The opening (not shown) serves as a space for transporting the substrate W into or out of the processing space 501. The opening (not shown) can be selectively opened and closed by a door assembly (not shown).

[0069] Furthermore, an observation port 505 is formed on one side wall of the housing 500. At least one observation port 505 may be formed on the side wall of the housing 500. The observation port 505 may be formed at a location that does not overlap with an opening (not shown) formed in the side wall of the housing 500. The observation port 505 is formed through the side wall of the housing 500. When viewed from the front, the observation port 505 may be located between the cover 550 and the support unit 600 (described later).

[0070] Light emitted from the plasma generated in the processing space 501 through observation port 505 can pass through observation port 505. The light passing through observation port 505 can be transmitted to light collection unit 910 (described later). The detailed mechanism will be described below.

[0071] A discharge port 510 is formed in the bottom surface of the housing 500. The discharge port 510 is connected to a discharge unit 520. The discharge unit 520 can control the pressure of the processing space 501 by discharging the atmosphere from the processing space 501. In addition, the discharge unit 520 can discharge process gases and impurities (byproducts, etc.) present in the processing space 501 to the outside of the processing space 501.

[0072] The discharge unit 520 includes a discharge line 522 and a pressure-reducing member 524. One end of the discharge line 522 is connected to the discharge port 510, and the other end of the discharge line 522 is connected to the pressure-reducing member 524. The pressure-reducing member (not shown) may be a known device that applies negative pressure to the processing space 501.

[0073] The discharge baffle 530 may be located above the discharge port 510 to allow for more uniform discharge into the processing space 501. The discharge baffle 530 may be disposed between the side wall of the housing 500 and the support unit 600 (described later). Furthermore, when a liner (not shown) is disposed inside the housing 500, the discharge baffle 530 may be disposed between the liner (not shown) and the support unit 600. When viewed from above, the discharge baffle 530 may have a generally annular shape. At least one baffle hole 532 may be formed in the discharge baffle 530. The baffle hole 532 may be a through hole penetrating the upper and lower surfaces of the discharge baffle 530. Process gases, impurities, etc., present in the processing space 501 can be discharged through the baffle hole 532, the discharge port 510, and the discharge line 522.

[0074] A cover 550 is located above a housing 500. The cover 550 seals the open upper surface of the housing 500. According to an exemplary embodiment, the cover 550 covers the open upper surface of the housing 500 to define a lower processing space 501. The cover 550 may be formed in a generally plate-like shape. The cover 550 may include a dielectric material window. A recess may be formed in the central portion including the cover 550. The recess formed in the cover 550 may be stepped. The recess formed in the central portion of the cover 550 may extend through the upper and lower surfaces of the cover 550. A nozzle member 720 (described later) is inserted into the recess formed in the central portion of the cover 550.

[0075] The support unit 600 may be located within the processing space 501. According to an exemplary embodiment, the support unit 600 supports the substrate W within the processing space 501. The support unit 600 may include an electrostatic chuck (ESC) for attracting the substrate W using electrostatic force. Alternatively, the support unit 600 may support the substrate W in various ways, such as vacuum attraction or mechanical clamping. Hereinafter, an embodiment including the support unit 600 with an electrostatic chuck (ESC) will be described.

[0076] The support unit 600 includes an electrostatic chuck 610 and an insulating plate 650. The electrostatic chuck 610 supports the substrate W. The electrostatic chuck 610 may include a dielectric plate 620 and a base plate 630.

[0077] The dielectric plate 620 is located above the support unit 600. A substrate W is disposed on the upper surface of the dielectric plate 620. When the substrate W is placed on the upper surface of the dielectric plate 620, the edge region of the substrate W is located outside the dielectric plate 620. According to an exemplary embodiment, the dielectric plate 620 may be configured as a disc. According to an exemplary embodiment, the dielectric plate 620 may have a smaller diameter than the substrate W. According to an exemplary embodiment, the dielectric plate 620 may be a dielectric material.

[0078] Electrode 622 is located inside dielectric plate 620. According to an exemplary embodiment, electrode 622 may be embedded inside dielectric plate 620. Electrode 622 is electrically connected to a first power supply 624. The first power supply 624 may include a direct current (DC) power supply. A first switch 626 may be provided in the first power supply 624. Electrode 622 can be electrically connected to or disconnected from the first power supply 624 by turning the first switch 626 on or off. When the first switch 626 is on, a DC current flows to electrode 622. Electrostatic force acts between electrode 622 and substrate W through the current flowing to electrode 622. Therefore, substrate W is electrostatically attracted to dielectric plate 620.

[0079] Furthermore, a heater (not shown) may be disposed inside the dielectric plate 620. The heater (not shown) disposed within the dielectric plate 620 may be located below the electrode 622. The heater (not shown) may include a helical coil. The heater (not shown) can transfer heat to the dielectric plate 620, and the heat transferred to the dielectric plate 620 can be transferred to the substrate W. However, unlike the embodiment described above, the heater (not shown) may not be disposed inside the dielectric plate 620.

[0080] The base plate 630 is located below the dielectric plate 620. According to an exemplary embodiment, the base plate 630 may be disc-shaped. The upper surface of the base plate 630 may be stepped, such that its central region is located at a relatively higher position than its edge regions. The central region of the upper surface of the base plate 630 may have a region corresponding to the bottom surface of the dielectric plate 620. The central region of the upper surface of the base plate 630 may be bonded to the lower surface of the dielectric plate 620 via an adhesive layer (not shown). The ring member 640 (described later) may be located above the edge region of the upper surface of the base plate 630.

[0081] The base plate 630 may include a material with excellent thermal and electrical conductivity properties. According to an exemplary embodiment, the base plate 630 may include a metal plate. According to an exemplary embodiment, the entire base plate 630 may be made of a metallic material. For example, the material of the base plate 630 may include aluminum.

[0082] The base plate 630 can be electrically connected to a second power supply 630a. A second switch 630b can be disposed in the second power supply 630a. The base plate 630 can be electrically connected to or disconnected from the second power supply 630a by turning the second switch 630b on / off. The second power supply 630a can be a low-frequency power supply for generating low-frequency power. The second power supply 630a can apply low-frequency power to the base plate 630. The base plate 630 can receive low-frequency power from the second power supply 630a to improve the flowability of plasma formed in the processing space 501. According to an exemplary embodiment, the base plate 630 can receive low-frequency power to improve the flatness or insertion of plasma generated in the processing space 501. For example, when low-frequency power is applied to the base plate 630, plasma present in the processing space 501 can move flatly to the upper surface of the substrate W. However, unlike the above embodiment, low-frequency power may not be applied to the base plate 630.

[0083] A cooling flow channel 632 is formed inside the base plate 630. The cooling flow channel 632 serves as a channel through which cooling fluid circulates. According to an exemplary embodiment, the cooling fluid may include cooling water. According to an exemplary embodiment, the cooling flow channel 632 may be formed as a single channel. Further, the cooling flow channel 632 may be formed in a spiral shape.

[0084] Optionally, multiple cooling flow channels 632 can be formed. For example, the multiple flow channels can be formed as annular rings with different radii, sharing the center of the base plate 630 within the base plate 630. The multiple flow channels can be in fluid communication with each other. Furthermore, the multiple flow channels can be located at the same height as each other.

[0085] Cooling flow channel 632 is connected to cooling fluid storage unit 636 via cooling fluid supply line 634. Cooling fluid is stored in cooling fluid storage unit 636. Cooler 638 may be located within cooling fluid storage unit 636. Cooler 638 can cool the coolant stored in cooling fluid storage unit 636 to a predetermined temperature. Unlike the above, cooler 638 may be located on cooling fluid supply line 634. Cooling fluid can circulate along cooling flow channel 632 and cool substrate 630. Dielectric plate 620 and substrate W can be cooled together by cooling substrate 630. Therefore, substrate W can maintain the desired temperature.

[0086] Although not shown, a heat transfer flow path (not shown) may be formed inside the base plate 630. This heat transfer flow path (not shown) may supply a heat transfer medium to the lower surface of the substrate W. The heat transfer medium may be a fluid supplied to the lower surface of the substrate W to address temperature non-uniformity of the substrate W when plasma treatment is used. According to an exemplary embodiment, the heat transfer medium may be helium (He) gas.

[0087] A ring member 640 is disposed on the edge region of the electrostatic chuck 610. The ring member 640 is annular. The ring member 640 is disposed along the circumference of the dielectric plate 620. The upper surface of the ring member 640 may be formed in a stepped shape, such that the outer surface is higher than the inner surface. The inner upper surface of the ring member 640 may be located at the same height as the upper surface of the dielectric plate 620. The inner upper surface of the ring member 640 may support the edge region of the substrate W located outside the dielectric plate 620. The outer surface of the ring member 640 may surround the side of the substrate W. According to an exemplary embodiment, the ring member 640 may be a focusing ring.

[0088] An insulating plate 650 is located below the base plate 630. The insulating plate 650 may include an insulating material. The insulating plate 650 electrically insulates the base plate 630 from the housing 500. When viewed from above, the insulating plate 650 may be formed in a circular plate shape. The upper and lower surfaces of the insulating plate 650 may have areas corresponding to the areas on the bottom surface of the base plate 630.

[0089] Gas supply unit 700 supplies gas to processing space 501. The gas supplied to processing space 501 by gas supply unit 700 can be gas excited by plasma source 800 (described later). Furthermore, the gas supplied to processing space 501 by gas supply unit 700 can be a carrier gas. However, the invention is not limited thereto, and the gas supplied to processing space 501 by gas supply unit 700 can include various types of known gases used when processing plasma on substrate W.

[0090] The gas supply unit 700 may include a gas source 712, a gas line 714, a gas valve 716, and a nozzle component 720.

[0091] A gas source 712 stores gas. A gas line 714 connects the gas source 712 to the nozzle assembly 720. According to an exemplary embodiment, one end of the gas line 714 may be connected to the gas source 712, and the other end of the gas line 714 may be connected to the nozzle assembly 720. A gas valve 716 may be disposed in the gas line 714. The gas valve 716 may be an on / off valve. Optionally, the gas valve 716 may be a flow control valve.

[0092] The nozzle member 720 injects gas into the processing space 501. The nozzle member 720 can receive gas stored in the gas source 712 via the gas line 714 and inject the supplied gas into the processing space 501. The nozzle member 720 can be disposed on the cover 550. For example, the nozzle member 720 can be disposed in the central portion of the cover 550. The nozzle member 720 (described later) is inserted into a recess formed in the central portion of the cover 550. Therefore, the nozzle member 720 can inject gas into the processing space 501 from the upper side of the processing space 501.

[0093] Plasma source 800 excites the gas supplied to the processing space into a plasma state. The plasma source 800 according to an exemplary embodiment of the invention can use inductively coupled plasma (ICP). However, it is not limited thereto; plasma source 800 can be modified and used with various devices capable of generating plasma, such as capacitively coupled plasma (CCP) and microwave plasma. Hereinafter, the case of using inductively coupled plasma (ICP) as a plasma source will be described as an example.

[0094] The plasma source 800 may include an antenna housing 810, a plasma power supply 820, and an antenna 830. The antenna housing 810 may be formed in a generally cylindrical shape. According to an exemplary embodiment, the antenna housing 810 may have a cylindrical shape with an open lower portion. The antenna housing 810 may have a diameter corresponding to the diameter of the housing 500. The antenna housing 810 may be disposed above the housing 500. Further, the antenna housing 810 may be disposed above a cover 550. According to an exemplary embodiment, the lower end of the antenna housing 810 may be detachable from the cover 550. The antenna housing 810 has an internal space. The antenna 830 (described later) is arranged within the internal space of the antenna housing 810.

[0095] Plasma power supply 820 may be located outside process chamber 50. Plasma power supply 820 can apply high-frequency power to antenna 830 (described later). According to an exemplary embodiment, plasma power supply 820 may be a radio frequency (RF) power supply. One end of the power line to which plasma power supply 820 is connected may be grounded. An impedance matching device (not shown) may be provided in the power line.

[0096] Antenna 830 may include a spiral coil wound multiple times. The coil may be positioned facing the substrate W. For example, when viewed from above, the coil may be positioned overlapping the substrate W supported by support unit 600. The coil is connected to plasma power source 820 to receive power from plasma power source 820. According to an exemplary embodiment, the coil may receive high-frequency power from plasma power source 820 to induce a time-varying electric field in processing space 501. Therefore, gas supplied to processing space 501 may be excited into plasma.

[0097] Figure 4 To illustrate, according to Figure 3 A view of the connection terminals and measuring components of an exemplary embodiment. Figure 5 To illustrate, according to Figure 4 A view showing the state of the connection terminals of an exemplary embodiment connected to the light collection unit.

[0098] In the following text, reference will be made to Figures 3 to 5 The measurement unit of an exemplary embodiment of the present invention will be described in more detail below.

[0099] The measurement unit 900 can monitor the processing space 501. Specifically, the measurement unit 900 can monitor the light emitted from the plasma generated in the processing space 501. According to an exemplary embodiment, the measurement unit 900 can measure the characteristics of the plasma generated in the processing space 501 by monitoring and analyzing the light. For example, the measurement unit 900 can analyze the intensity (light quantity) and / or wavelength of the light. Using the plasma characteristics measured by the measurement unit 900, the operator can control the process by controlling the density, intensity, composition, etc., of the plasma generated in the processing space 501.

[0100] The detection unit 900 according to an exemplary embodiment may include a light collection unit 910, an analysis unit 920, an optical cable 930, and a measurement component 940.

[0101] A light-collecting unit 910 may be disposed on a side wall of the housing 500. According to an exemplary embodiment, the light-collecting unit 910 may be positioned corresponding to an observation port 505 formed on a side wall of the housing 500. The light-collecting unit 910 may have a light-collecting space in which light is collected. A plurality of lenses (not shown) may be disposed inside the light-collecting unit 910. Light emitted from the plasma generated in the processing space 501 passes through the observation port 505, is transmitted through the observation port 505 to the light-collecting unit 910, and is collected in the light-collecting unit 910.

[0102] Furthermore, a terminal 912 may be formed in the light collecting unit 910. The terminal 912 may be formed on the inner wall of the light collecting unit 910. Additionally, a groove may be formed in the light collecting unit 910. For example, a groove may be formed on the outer wall of the light collecting unit 910. A connecting terminal 932 (described later) may be fastened to the groove formed in the light collecting unit 910. When viewed from the front, the groove and the terminal 912 may be formed at a position where they overlap. Therefore, the terminal 912 and the connecting terminal 932 may be electrically connected to each other. The light collected by the light collecting unit 910 is converted into optical data in the terminal 912, and the converted optical data may be transmitted to the connecting terminal 932 connected to the terminal 912. Hereinafter, for ease of description, the optical data will be collectively referred to as light.

[0103] The analysis unit 920 can be disposed in the external region of the housing 500. Furthermore, the analysis unit 920 can be connected to the light collection unit 910. The analysis unit 920 can be connected to the light collection unit 910 via an optical cable 930 (described later). The analysis unit 920 can receive and analyze the light collected by the light collection unit 910. That is, the analysis unit 920 can analyze the light emitted from the plasma generated in the processing space 501. Furthermore, the analysis unit 920 can analyze the light to detect the endpoint of the processing. Specifically, the analysis unit 920 can analyze the peak data from the light transmitted from the light collection unit 910. The peak data analyzed by the analysis unit 920 can be used to detect the endpoint of the processing. According to an exemplary embodiment, the analysis unit 920 can be a direct-reading optical emission spectrometer (OES) for measuring spectra.

[0104] Optical cable 930 may include an optical fiber composed of multiple twisted wires. According to an exemplary embodiment, the optical cable may be a fiber optic cable (FOC). One end of optical cable 930 may be connected to light collection unit 910. Furthermore, the other end of optical cable 930 may be connected to analysis unit 920. Optical cable 930 can transmit the light collected by light collection unit 910 to analysis unit 920.

[0105] According to an exemplary embodiment, a connection terminal 932 may be formed at one end of the optical cable 930. The connection terminal 932 may have the same longitudinal direction as the optical cable 930. The connection terminal 932 may be fastened to the light collecting unit 910. Specifically, the connection terminal 932 may be fastened to a groove formed in the light collecting unit 910. According to an exemplary embodiment, only a portion of the entire area of ​​the connection terminal 932 may be fastened to the groove formed in the light collecting unit 910. The connection terminal 932 may be fastened to the light collecting unit 910 to receive light collected by the light collecting unit 910. A measuring member 940 may be disposed on the connection terminal 932.

[0106] The measuring member 940 can measure the clamping length between the light collecting unit 910 and the optical cable 930. The measuring member 940 may include a scale. The scale can be indicated along the longitudinal direction of the optical cable 930. That is, the scale can be indicated along the longitudinal direction of the connection terminal 932. For example, the scale can be indicated from one end of the connection terminal 932 to the other end.

[0107] According to an exemplary embodiment, since only a portion of the entire area of ​​the connection terminal 932 is secured to the light collecting unit 910, the degree of secureness between the light collecting unit 910 and the optical cable 930 can be determined using a scale that indicates the longitudinal direction of the connection terminal 932 from one end to the other. Therefore, an operator can determine the degree to which the optical cable 930 is secured to the groove of the light collecting unit 910 by checking the scale. In other words, the operator can use the scale to measure the length of the secure connection between the optical cable 930 and the light collecting unit 910.

[0108] The substrate processing method according to an exemplary embodiment of the present invention will be described below. Furthermore, the mechanism for detecting the endpoint of the processing using the measurement unit of the present invention described above will be described in detail. Since the substrate processing method and the mechanism for detecting the endpoint of the processing described below are based on reference... Figures 2 to 5 The exemplary embodiment described herein is performed by a substrate processing apparatus, therefore, in the following, Figures 2 to 5 The reference numerals in the accompanying drawings shall be used as is.

[0109] The peak data detected by the analysis unit 920 according to the exemplary embodiment is related to the length of the optical cable 930 fastened to the light collection unit 910. For example, when the connection terminal 932 of the optical cable 930 is fastened relatively deeply to the light collection unit 910, the value of the peak data detected by the analysis unit 920 increases. Conversely, when the connection terminal 932 is fastened relatively thinly to the light collection unit 910, the value of the peak data detected by the analysis unit 920 decreases. That is, the peak data value detected by the analysis unit 920 can be proportional to the fastening length between the optical cable 930 and the light collection unit 910.

[0110] In the process chamber 50 according to an exemplary embodiment, plasma is generated in the processing space 501 to process the substrate W. When processing the substrate W, the operator can collect and record peak data based on the fastening length between the optical cable 930 and the light collecting unit 910. Specifically, when processing the substrate W by generating plasma in the processing space 501, the operator can match and record the peak data detected by the analysis unit 920 based on the fastening length and the length from the connection terminal 932 formed in the optical cable 930 to the groove formed in the light collecting unit 910. That is, when using plasma to process the substrate W, the operator can collect peak data based on the fastening length between the optical cable 930 and the light collecting unit 910 to record the collected peak data as standardized data.

[0111] During the processing of substrate W, a predetermined thin film formed on substrate W can be etched, thereby generating impurities such as particles in the processing space 501. Furthermore, the predetermined thin film formed on substrate W can chemically react with plasma, thereby generating impurities in the processing space 501. In this case, impurities may float in the processing space 501 and may deposit and adhere to the observation port 505 formed on the sidewall of housing 500. When impurities adhere to or deposit on the observation port 505, light emitted from the plasma generated during substrate W processing cannot pass smoothly through the observation port 505. Therefore, the amount of light collected by the light collection unit 910 is relatively reduced. As a result, due to the reduced amount of light transmitted to the analysis unit 920, the peak data value of the light in the analysis unit 920 may decrease. When the peak data value changes, the endpoint of the processing on substrate W cannot be accurately detected.

[0112] Furthermore, the process chamber 50 can be maintained after processing a predetermined number or more substrates. For example, maintenance can be performed on the process chamber 50 between processing a previous substrate and processing a subsequent substrate. When maintenance is performed, components included in the process chamber 50 can be disassembled. For example, when maintenance is performed on the process chamber 50, the connection terminal 932 of the optical cable 930 fastened to the light collection unit 910 can be separated from the light collection unit 910. After maintenance, the operator fastens the connection terminal 932 back into the groove formed in the light collection unit 910. In this case, the tightness between the connection terminal 932 and the light collection unit 910 can vary depending on the operator. As described above, since the peak data value detected by the analysis unit 920 is related to the fastening length between the optical cable 930 and the light collection unit 910, the peak data value detected by the analysis unit 920 may vary depending on the operator, even if impurities do not adhere to the observation port 505. When the peak data value changes, the endpoint of processing on the substrate W cannot be accurately detected.

[0113] Figure 6 A graph is provided to illustrate standardized data, currently detected peak data, and peak data under abnormal conditions according to an exemplary embodiment of the present invention.

[0114] refer to Figure 6 When the current peak data (problem PEAK, see double-dotted line) detected by the analysis unit 920 is in an abnormal state, in the case of handling plasma, the operator can change the fastening length between the optical cable 930 and the optical collection unit 910 by using standardized data, which is recorded by peak data collected based on the fastening length between the optical cable 930 and the optical collection unit 910.

[0115] For example, when impurities are deposited in observation port 505 and the current peak data (problem peak) detected by analysis unit 920 has a lower value than the peak data (normal peak) under normal conditions, the operator can use standardized data to change the clamping length between the connection terminal 932 formed on the optical cable 930 and the optical collection unit 910. Specifically, the operator can change the clamping length between the connection terminal 932 and the optical collection unit 910 by using the clamping length required when the current peak data (problem peak) reaches the peak data (normal peak) under normal conditions (recorded in standardized data). Therefore, the current peak data (problem peak) can be calibrated to the peak data (normal peak) under normal conditions.

[0116] Furthermore, after performing maintenance on the process chamber 50, the operator can tighten the connection terminal 932 to the light collection unit 910 based on standardized data, according to the required tightening length based on the peak data (normal peak) under normal conditions as a reference. However, the invention is not limited to this; after performing maintenance, the connection terminal 932 can be tightened to the light collection unit 910 with any tightening length according to the operator, and when using the plasma processing substrate W, the operator can calibrate the tightening length between the connection terminal 932 and the light collection unit 910 based on standardized data.

[0117] According to the exemplary embodiments of the present invention described above, even if the amount of light passing through the observation port 505 is reduced due to impurities generated when using the plasma-processed substrate W, the endpoint of the processing on the substrate W can be accurately detected by changing the fastening length between the optical cable 930 and the light collection unit 910 using standardized data. Furthermore, even after maintenance of the process chamber 50, when the tightness between the optical cable 930 and the light collection unit 910 varies depending on the operator, the endpoint of the processing on the substrate W can still be accurately detected using standardized data.

[0118] In the above embodiments, the example described is based on an operator recording standardized data, but the embodiments are not limited thereto. For example, a process controller consisting of a microprocessor (computer) and a controller consisting of a memory, a display, etc. (not shown) can record the collected peak data as standardized data based on the peak data received and collected by the analysis unit 920. The operator can use the standardized data recorded in the controller (not shown) to change the fastening length between the optical cable 930 and the optical collection unit 910.

[0119] In the following, another exemplary embodiment of the connection terminal and measuring member according to the exemplary embodiment of the present invention will be described. Since the connection terminal and measuring member according to the exemplary embodiment described below are substantially the same as or similar to the connection terminal and measuring member of the exemplary embodiment described above, except for the additional description, descriptions of repeated content will be omitted.

[0120] Figure 7 To illustrate, according to Figure 3 A view of the connection terminals and measuring components of another exemplary embodiment. Figure 8 To illustrate, according to Figure 7 A view showing the state of the connection terminals of an exemplary embodiment connected to the light collection unit.

[0121] refer to Figure 3 , Figure 7 and Figure 8 According to an exemplary embodiment of the present invention, a measuring member 940 may be disposed at a connection terminal 932. The measuring member 940 according to the exemplary embodiment can measure the fastening length between the light collecting unit 910 and the optical cable. The measuring member 940 may include distance sensors 944 and 946. The distance sensors 944 and 946 according to the exemplary embodiment may be disposed on one side of the connection terminal 932. For example, as... Figure 6 As shown, a protruding member 942 may be disposed on one side surface of the connecting terminal 932. The protruding member 942 may be configured to protrude from one side surface of the connecting terminal 932. For example, when the connecting terminal 932 is fully secured to the groove formed in the light collecting unit 910, the protruding member 942 may be located outside the groove formed in the light collecting unit 910.

[0122] Distance sensor 946 can be disposed on the side surface of protruding member 942. Distance sensors 944 and 946 can be disposed on the side surface of protruding member 942 facing the light collecting unit 910. Distance sensors 944 and 946 can be composed of an irradiator 944 irradiating infrared, ultraviolet, ultrasonic, visible light, or laser light, and a receiver 946 receiving the irradiated infrared, ultraviolet, ultrasonic, visible light, or laser light. Distance sensors 944 and 946 can measure the distance from connection terminal 932 to the connected light collecting unit 910 by irradiating the light collecting unit 910 with infrared light and receiving the irradiated infrared light. The fastening length between the light collecting unit 910 and the optical cable 930 can be measured using the distance measured by distance sensors 944 and 946.

[0123] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described preferred exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, its equivalents, and / or within the scope of the art or knowledge available. The foregoing exemplary embodiments describe the optimal state for presenting the technical essence of the invention, and various variations are possible for specific fields of application and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be construed as including other exemplary embodiments.

Claims

1. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A chamber for generating plasma in a processing space and using the plasma processing substrate; as well as A measurement unit is used to monitor the light emitted by the plasma from the processing space. The measuring unit includes: A light collecting unit for collecting light passing through an observation port formed on a side wall of the chamber; the light collecting unit includes a collecting terminal and a groove, the collecting terminal being formed on the inner wall of the light collecting unit and the groove being formed on the outer wall of the light collecting unit, the collecting terminal and the groove overlapping each other when viewed from the front; and An optical cable having a connector formed at one end thereto for transmitting light, wherein a portion of the connector is fastened to the groove of the light collecting unit. A measuring component capable of measuring the fastening length between the light collection unit and the optical cable is disposed in the connection terminal.

2. The substrate processing apparatus according to claim 1, wherein The measuring component includes a scale indicating the longitudinal direction of the optical cable.

3. The substrate processing apparatus according to claim 2, wherein The measurement unit further includes an analysis unit connected to the other end of the optical cable to analyze the light transmitted from the light collection unit and analyze the peak data of the light to detect the endpoint of the processing.

4. The substrate processing apparatus according to claim 3, wherein The peak data changes according to the fastening length.

5. The substrate processing apparatus according to claim 4, wherein The fastening length and the peak data are proportional to each other.

6. The substrate processing apparatus according to claim 5, wherein When performing the aforementioned process, the operator collects the peak data based on the fastening length and records the collected peak data as standardized data.

7. The substrate processing apparatus according to claim 6, wherein The operator changes the fastening length so that the currently detected peak data is calibrated to normal peak data under normal conditions based on the standardized data.

8. The substrate processing apparatus according to claim 2, wherein The connecting terminal has the same longitudinal direction as the optical cable, and the connecting terminal is fastened to one wall of the light collecting unit. The scale is indicated from one end of the connection terminal to the other.

9. The substrate processing apparatus according to claim 1, wherein The measuring component includes a distance sensor disposed on one side of the connection terminal and measuring the distance to the light collecting unit connected to the connection terminal.

10. The substrate processing apparatus according to claim 1, wherein The chamber further includes: A support unit for supporting the substrate in the processing space; A gas supply unit, wherein the gas supply unit is used to supply gas to the processing space; and A plasma source, which is used to excite the gas.

11. A substrate processing method, the substrate processing method being used to process a substrate by generating plasma in a processing space within a chamber, the substrate processing method comprising: In the case of processing a substrate in the processing space, the peak data of the light emitted from the plasma generated in the processing space are analyzed to detect the endpoint of the processing. The method involves measuring the fastening length between a light-collecting unit for collecting light and an optical cable fastened to the light-collecting unit, and detecting the peak data based on the fastening length. The light-collecting unit includes a collecting terminal and a groove. The collecting terminal is formed on the inner wall of the light-collecting unit, and the groove is formed on the outer wall of the light-collecting unit. When viewed from the front, the collecting terminal and the groove overlap each other. The optical cable has a connecting terminal formed at one end for transmitting light, and a portion of the connecting terminal is fastened to the groove of the light-collecting unit. A measuring member capable of measuring the fastening length is disposed in the connecting terminal.

12. The substrate processing method of claim 11, wherein, The peak data changes according to the fastening length.

13. The substrate processing method of claim 12, wherein, The fastening length and the peak data are proportional to each other.

14. The substrate processing method of claim 12, wherein, When performing the aforementioned process, the operator collects the peak data based on the fastening length and records the collected peak data as standardized data.

15. The substrate processing method according to claim 14, wherein, The peak data is changed while performing the aforementioned processing, and The operator adjusts the fastening length based on the standardized data to calibrate the peak data that changes during the processing to normal peak data under normal conditions.

16. The substrate processing method of claim 15, wherein, The peak data is altered by impurities deposited in the observation port, through which light in the processing space passes.

17. The substrate processing method of claim 15, wherein, The peak data is changed after the processing is performed and after maintenance of the chamber.

18. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A chamber having an observation port and a processing space therein; A support unit for supporting the substrate in the processing space; A gas supply unit, the gas supply unit being used to supply gas to the processing space; A plasma source, the plasma source being used to generate plasma by exciting the gas, and A measuring unit, the measuring unit being used to monitor the light emitted from the plasma, The measuring unit includes: A light collecting unit is provided for collecting light passing through the observation port. The light collecting unit includes a collecting terminal and a groove. The collecting terminal is formed on the inner wall of the light collecting unit, and the groove is formed on the outer wall of the light collecting unit. When viewed from the front, the collecting terminal and the groove overlap each other. An analysis unit is configured to detect the endpoint of the processing by analyzing peak data of the light transmitted from the light collection unit; and An optical fiber cable is connected to both the light collection unit and the analysis unit to transmit light from the light collection unit to the analysis unit. A connection terminal is formed at one end of the optical cable that is fastened to the light collecting unit, and a portion of the connection terminal is fastened to the groove of the light collecting unit. A measuring component capable of measuring the fastening length between the light collection unit and the optical cable is disposed in the connection terminal.

19. The substrate processing apparatus of claim 18, wherein, The measuring component includes a scale indicated on the connection terminal along the longitudinal direction of the connection terminal, and The connection terminal is fastened to one side wall of the light collection unit.

20. The substrate processing apparatus of claim 19, wherein, The peak data changes according to the fastening length. When performing the aforementioned process, the operator collects the peak data based on the fastening length and records the collected peak data as standardized data. The operator changes the fastening length so that the currently detected peak data is calibrated to normal peak data under normal conditions based on the standardized data.

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