Showerhead comprising a plurality of plenum chambers and a faceplate having a central gas distribution port
By designing a nozzle assembly with a multi-layer structure and independent gas channels, the problems of insufficient cooling performance and uneven gas distribution of traditional nozzles were solved, achieving uniform processing and efficient cooling of the wafer surface.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LAM RES CORP
- Filing Date
- 2024-11-13
- Publication Date
- 2026-06-19
AI Technical Summary
In existing semiconductor manufacturing processes, traditional nozzle designs suffer from insufficient cooling performance, leading to uneven wafer surface treatment and uneven gas distribution. This is especially true in multi-chamber nozzles, where the lack of gas distribution ports in the central area can cause gas depletion, affecting processing efficiency.
A nozzle assembly was designed, comprising two or more sets of gas distribution ports and independent gas channels. Uniform gas distribution and cooling are achieved through a central feeding and filling chamber and multiple column structures. A multi-layer structure is adopted to enhance the strength and heat transfer performance of the nozzle.
This technology achieves uniform gas distribution on the wafer surface, improves cooling efficiency, reduces processing non-uniformity, and enhances the structural strength and thermal management capabilities of the nozzle.
Smart Images

Figure CN122249585A_ABST
Abstract
Description
[0001] References merged The PCT application form is filed together with this specification as part of this application. Each application listed in the concurrently filed PCT application form that claims a benefit or priority with this application is incorporated herein by reference in its entirety for all purposes.
[0002] Existing technology Semiconductor manufacturing processes typically occur within a chamber during wafer handling operations, where one or more semiconductor wafers are supported on a pedestal. This pedestal may be located below a corresponding gas distribution system (e.g., a nozzle), allowing process gases to be distributed to the exposed side of the semiconductor wafer supported by the pedestal. In some cases, such nozzles may incorporate active cooling functionality. The novel nozzle design disclosed herein provides more efficient and effective cooling performance than conventional designs. Summary of the Invention
[0003] Detailed embodiments of the objectives described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, drawings, and claims.
[0004] This disclosure relates to a nozzle for a semiconductor processing system. The nozzle may include a panel having two or more sets of gas distribution ports for distributing two or more processing gases to the exposed side of a semiconductor wafer supported by a substrate. The nozzle may further include two or more inlets configured to receive the two or more processing gas streams respectively. The nozzle may further include two or more filling chambers with fluid inserted between the respective two or more inlets and the sets of gas distribution ports.
[0005] The nozzle may have a first gas channel including a first inlet. The nozzle may further include a second gas channel within the nozzle, isolated from the first gas channel, the second gas channel having a second inlet separate from the first inlet and located on the central axis of the nozzle. The nozzle may further include a panel surface facing a corresponding wafer support, the panel surface having a plurality of first gas distribution ports distributed on the panel surface, the first gas distribution ports being fluidly connected to the first gas channel within the nozzle. The panel surface may further include a plurality of second gas distribution ports distributed on the panel surface, the second gas distribution ports being fluidly connected to the second gas channel within the nozzle. The nozzle may further include a first central feed gas chamber fluidly inserted between the first gas channel and the first gas distribution ports, the first central feed gas chamber being spaced apart from the panel surface by a first distance. The nozzle may further include a second central feed gas chamber fluidly inserted between the second gas channel and the second gas distribution ports, the second central feed gas chamber being spaced apart from the panel surface by a second distance shorter than the first distance. The first gas distribution port may include a central first gas distribution port located at the center of the panel surface.
[0006] In some embodiments, the nozzle may further include an injector body having a first gas passage having a first inlet and a second gas passage having a second inlet. The nozzle may further include a nozzle assembly attached to the injector body. The nozzle assembly may include a first central feed chamber having a first outer edge region and a first central region located radially inward from the first outer edge region. The first central feed chamber is fluidly connected to the first gas passage in the injector body, and the first central feed chamber has an upper surface and a lower surface facing the upper surface. The nozzle assembly may further include a plurality of first pillars located in the first central feed chamber extending between the upper surface and the lower surface of the first central feed chamber. The nozzle assembly may include a second central feed chamber having a second outer edge region and a second central region located radially inward from the second outer edge region. The second central feed chamber is fluidly connected to the second gas passage in the injector body, and the second central feed chamber has an upper surface and a lower surface facing the upper surface of the second central feed chamber. The nozzle assembly may include a plurality of second columns located in a second central feed chamber, extending between the upper surface and the lower surface of the second central feed chamber. The second columns may include a plurality of conduits with fluid insertion between the first central feed chamber and the first gas distribution port.
[0007] In some embodiments, the first central feed inflation chamber may have a radially inward-facing inner peripheral surface that defines the interior of the first central feed inflation chamber, and the first column is distributed within the interior of the first central feed inflation chamber.
[0008] In some embodiments, the second central feed chamber may have a radially inward-facing inner peripheral surface that defines the interior of the second central feed chamber, and the second column may be distributed within the interior of the second central feed chamber.
[0009] In some embodiments, the nozzle assembly may further include a top layer having a central conduit extending along the central axis of the respective nozzle. The central conduit may include a first inflation chamber inlet fluidly inserted between a first gas passage in the injector body and a first central feed inflation chamber. The central conduit may further include a second inflation chamber inlet fluidly inserted between a second gas passage in the injector body and a second central feed inflation chamber. The nozzle assembly may further include a bottom layer having a first gas distribution port in the panel surface of the nozzle, the first gas distribution port being fluidly connected to a conduit located in a second column of the second central feed inflation chamber. The bottom layer may further include a second gas distribution port in the panel surface of the respective nozzle, the second gas distribution port being fluidly connected to the second central feed inflation chamber. The nozzle assembly may further include an intermediate layer located between the top and bottom layers. The intermediate layer may include a plurality of first holes fluidly inserted between the interior of the first central feed inflation chamber and a conduit located in the second column of the second central feed inflation chamber. The intermediate layer may further have one or more second holes fluidly inserted between the second inflation chamber inlet and the interior of the second central feed inflation chamber.
[0010] In some embodiments, each of the first columns may be joined to or integrated with the top and middle layers, thereby forming a continuous load path between the upper and lower surfaces of the first central feed air chamber and reinforcing the nozzle in the region of the first central feed air chamber.
[0011] In some embodiments, each of the second columns may be joined to or integrated with the intermediate and bottom layers, thereby forming a continuous load path between the upper surface of the second central feed air chamber and the lower surface of the second central feed air chamber, and reinforcing the nozzle in the region of the second central feed air chamber.
[0012] In some implementations, the top layer, intermediate layer, and bottom layer can diffusely bond together with each other, and the top layer can be hermetically connected to the injector body.
[0013] In some implementations, the top layer may be configured to be hermetically connected to the injector body. The intermediate layer may be configured to be hermetically connected to the top layer to define a first central feed chamber, and each of the first pillars forms a tensile and compressive load path between the upper and lower surfaces of the first central feed chamber. The bottom layer may be configured to be hermetically connected to the intermediate layer to define a second central feed chamber, and each of the second pillars forms a tensile and compressive load path between the upper and lower surfaces of the second central feed chamber.
[0014] In some embodiments, the first holes in the intermediate layer may be distributed within the intermediate layer and may include a central first hole located at the center of the intermediate layer along the central axis of the respective nozzle. The lower surface of the first central feed aeration chamber may include one or more grooves, with fluid inserted between the interior of the first central feed aeration chamber and the central first hole located at the center of the intermediate layer.
[0015] In some embodiments, the second inflation chamber inlet may have an upper section that is fluidly connected to a second gas passage in the injector body. The second inflation chamber inlet may further include one or more lower sections fluidly inserted into the upper section and corresponding one or more second holes in the intermediate layer. The second inflation chamber inlet may have an end that is sealingly connected to the intermediate layer at the lower surface of the first central feed inflation chamber to separate the one or more lower sections of the second inflation chamber inlet and the corresponding one or more second holes in the intermediate layer from one or more recesses and the interior of the first central feed inflation chamber.
[0016] In some implementations, the one or more grooves may comprise two linear grooves that are fluidly connected to the two diametrically opposed sides of a central first hole located at the center of the intermediate layer.
[0017] In some embodiments, one or more lower sections of the second inflation chamber inlet include two kidney-shaped openings, with fluid inserted between the upper section of the second inflation chamber inlet and one or more corresponding second holes in the intermediate layer.
[0018] In some embodiments, one or more second holes in the intermediate layer comprise two kidney-shaped openings, with fluid inserted between the two kidney-shaped openings at the inlet of the second inflation chamber and the interior of the second central feed inflation chamber.
[0019] In some implementations, the two kidney-shaped openings in the intermediate layer can be fluidly isolated from one or more grooves on the lower surface of the central first orifice of the intermediate layer and the corresponding nozzle's first central feed chamber.
[0020] In some implementations, the nozzle assembly may further include a cooling layer mounted to one or more of the top, middle, and bottom layers. The cooling layer may include one or more coolant channels configured to circulate coolant and carry heat away from the cooling layer.
[0021] In some implementations, the nozzle assembly may further include a heating layer mounted to one or more of the top, middle, and bottom layers. The heating layer may include one or more heating elements configured to transfer heat to the heating layer.
[0022] In some embodiments, each of the first columns may be a cylinder with curved sides configured to allow the first gas to flow around the respective first column and distribute the first gas to the entire first central feed chamber.
[0023] In some embodiments, each of the second columns may be a cylinder with curved sides configured to allow the second gas to flow around the respective second column and distribute the second gas throughout the second central feed chamber.
[0024] In some implementations, at least a portion of one or more nozzles may be made of metal, alloy, ceramic, or plastic.
[0025] An apparatus may include one or more nozzles, each nozzle positioned above a corresponding wafer support within an internal volume of a processing chamber. The nozzle may have a first gas channel including a first inlet. The nozzle may further include a second gas channel isolated from the first gas channel, the second gas channel having a second inlet separate from the first inlet and located along the central axis of the nozzle. The nozzle may further include a panel surface facing the corresponding wafer support, the panel surface having a plurality of first gas distribution ports distributed on the panel surface, the first gas distribution ports being fluidly connected to the first gas channel within the nozzle. The panel surface may further include a plurality of second gas distribution ports distributed on the panel surface, the second gas distribution ports being fluidly connected to the second gas channel within the nozzle. The nozzle may further include a first central feed gas chamber fluidly inserted between the first gas channel and the first gas distribution ports, the first central feed gas chamber being spaced apart from the panel surface by a first distance. The nozzle may further include a second central feed gas chamber fluidly inserted between the second gas channel and the second gas distribution ports, the second central feed gas chamber being spaced apart from the panel surface by a second distance shorter than the first distance. The first gas distribution port may include a central first gas distribution port located at the center of the panel surface. The device may further include one or more gas curtain outlets configured to provide an annular gas curtain around the panel surface of the nozzle.
[0026] In some embodiments, each of one or more gas curtain outlets may include a curtain gas channel configured to allow flow of one or more curtain gases. The semiconductor processing system may include a carrier assembly having a top plate with a chamber surface facing an internal volume of a processing chamber, the chamber surface having two or more edges defining two or more corresponding orifices in the chamber surface. The carrier assembly may be configured to engage two or more nozzles and hold each nozzle in a fixed position relative to the carrier assembly within a corresponding orifice in the chamber surface, defining an annular gap between a corresponding edge of the top plate and an outer edge region of the panel surface of the corresponding nozzle. The annular gap may be fluidly connected to the curtain gas channel and may be configured to allow flow of one or more curtain gases along a flow path having an annular profile surrounding the panel surface of the nozzle.
[0027] In some embodiments, the chamber surface of the top plate has an outer peripheral region and a center radially spaced inward from the outer peripheral region. An annular gap has a portion located within the outer peripheral region of the chamber surface. The chamber surface of the top plate includes a plurality of cleaning ports distributed throughout the chamber surface, which can be configured to allow flow of one or more curtain gases. One or more portions of the outer peripheral region of the chamber surface with the annular gap may not include cleaning ports.
[0028] In some embodiments, each nozzle may include an annular flange having a mounting surface radially outward relative to the central axis of the nozzle; and the carrier assembly may include locator surfaces radially inward toward the central axis of the respective nozzle, each of the locator surfaces being configured to engage the mounting surface of the respective nozzle and hold an outer edge region of the nozzle's panel surface in a fixed position relative to the respective edge, providing an annular gap between the edge and the outer edge region of the nozzle's panel surface.
[0029] In some embodiments, the curtain gas channel may include a constriction section having a predetermined length and fluidly connected to an annular gap. The curtain gas channel may further include a chamber portion fluidly connected to the constriction section and having a volume based on flow requirements to serve as a manifold for uniform distribution of curtain gas.
[0030] In some embodiments, each nozzle may include a nozzle contraction surface that faces radially outward relative to the nozzle's central axis. The carrier assembly may include a carrier contraction surface for each nozzle contraction surface. Each carrier contraction surface may face radially inward toward the central axis of the corresponding nozzle. Each carrier contraction surface may be radially outwardly spaced from the nozzle contraction surface of the corresponding nozzle to define a contraction portion in fluid contact with the annular gap.
[0031] In some embodiments, the device may further include a gas distribution system comprising a plurality of controllable valves to selectively direct one or more treatment gases from a plurality of different gas sources connectable to the gas distribution system to one or more nozzles.
[0032] Other applications of the invention will become apparent from the detailed description provided below. It should be understood that the detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the invention. Attached Figure Description
[0033] The invention will be more fully understood from the detailed description and accompanying drawings, wherein: Figure 1 A perspective cross-sectional view of an example semiconductor processing system with multiple exemplary nozzles is depicted, showing nozzles with gas curtain outlets configured to allow curtain gas to flow around the panel surface of the nozzles.
[0034] Figure 2 Depicting Figure 1 A cross-sectional view of one of the nozzles shows a curtain gas surrounding a wafer support that holds the substrate within a substrate processing region within the internal volume of the processing chamber.
[0035] Figure 3 It depicts the section taken along line AA. Figure 1 An enlarged cross-sectional view of the nozzle illustrates the nozzle comprising an injector body having a first gas passage.
[0036] Figure 4 It depicts the section taken along the BB line. Figure 1 A perspective cross-sectional view of the nozzle, showing the central first gas distribution port of multiple first gas distribution ports located at the center of the bottom layer.
[0037] Figure 5 It depicts the section taken along line AA. Figure 3 A cross-sectional view of the nozzle, showing the injector body with a second gas passage.
[0038] Figure 6A Depicting the section along the CC line Figure 4 An enlarged perspective cross-sectional view of the nozzle, showing the inlet of the second air chamber in the central duct of the top layer.
[0039] Figure 6B Depicting Figure 6A An enlarged perspective cross-sectional view of the nozzle, but without the second air chamber inlet in the central duct of the top layer.
[0040] Figure 7 for Figure 2An enlarged view of area 1 of the nozzle, showing the implementation of the nozzle and the top plate defining the gas curtain outlet.
[0041] Figure 8 Depicting Figure 2 An enlarged perspective cross-sectional view of the nozzle, showing the nozzle containing the cooling layer.
[0042] Figure 9 Depicting Figure 2 An enlarged perspective cross-sectional view of the nozzle, showing the nozzle containing the heating layer. Detailed Implementation
[0043] Reference Figure 1 The semiconductor processing system 100 (e.g., a chemical deposition system, an etching system, etc.) includes one or more nozzles 102 for flowing one or more process gases during one or more semiconductor processing operations (e.g., deposition processes, preparation processes, thermal processing processes, etc.). The semiconductor processing system 100 further includes a processing chamber 104 with an internal volume 106 and one or more wafer supports 108 located within the internal volume 106 and configured to support a corresponding substrate 110. Each nozzle 102 (e.g., a flush nozzle, etc.) is located above the corresponding one or more wafer supports 108 and is used to flow one or more process gases onto the substrate 110 during semiconductor processing operations performed within the internal volume 106 of the processing chamber 104. The semiconductor processing system 100 further includes a gas distribution system 112 having a plurality of valves 114 for controllably allowing one or more processing gases from a plurality of different gas sources 116 connectable to the gas distribution system 112 to flow selectively through one or more flow paths of each nozzle 102 and onto a corresponding substrate 110 within the internal volume 106 of the processing chamber 104.
[0044] In some conventional multi-chamber nozzles, each chamber can be supplied with one or more process gases by a central gas inlet or gas inlets surrounding the chamber. However, implementing a dual-chamber nozzle with simultaneous central gas supply can introduce complex problems. For example, in such a nozzle, one gas inlet may be coaxial with another. However, the innermost gas inlet may, for example, block the outer gas inlet from reaching the port located at the center of the nozzle, thereby preventing the outer gas inlet from delivering process gas from the central port on the bottom side of the nozzle. The lack of a gas distribution port in the central region of the panel may deplete one or more process gases at one or more locations on the substrate 110 (e.g., the central portion of the substrate 110), resulting in corresponding non-uniformities at these locations on the substrate 110. Furthermore, some semiconductor processing systems may include modules with multiple nozzles, and process gas from one nozzle may contaminate one or more wafers located below other corresponding nozzles.
[0045] As described in detail below, each nozzle 102 has a first gas passage 118 and a second gas passage 120 isolated from the first gas passage 118 within the nozzle 102. The first gas passage 118 includes a first inlet 122, and the second gas passage 120 includes a second inlet 124 separate from the first inlet 122. In this embodiment, both the first inlet 122 and the second inlet 124 are located within a central region 126 of the nozzle 102. Each nozzle 102 also has a panel surface 128 facing a corresponding wafer support 108. The panel surface 128 includes a plurality of first gas distribution ports 130 distributed in the panel surface 128 and in fluid communication with the first gas passage 118 within the nozzle 102. The panel surface 128 further includes a plurality of second gas distribution ports 132 distributed in the panel surface 128 and in fluid communication with the second gas passage 120 within the nozzle 102. Each nozzle 102 also has a first central feed chamber 134 that is fluid-inserted between the first gas passage 118 and the first gas distribution port 130, the first central feed chamber 134 being separated from the panel surface 128 by a first distance D1. Figure 2 The first gas distribution port 130 includes a central first gas distribution port 136 located at the center of the panel surface 128, configured to allow one or more process gases to flow to the substrate 110 to deposit a uniform film on the substrate 110. Each nozzle 102 also has a second central feed gas chamber 138 fluidly inserted between the second gas channel 120 and the second gas distribution port 132, the second central feed gas chamber 138 being at a second distance D2 from the panel surface 128 that is shorter than the first distance D1. Figure 2 ).
[0046] Reference Figure 2 and Figure 3 Each nozzle 102 includes an injector body 140, which includes a first gas passage 118 having a first inlet 122 and a second gas passage 120 having a second inlet 124. In this embodiment, the first gas passage 118 and the second gas passage 120 are located within a central region 126 of the respective nozzle 102. The first gas passage 118 may include two channel branches 142 that are fluidly connected to the first inlet 122. Figure 3These channel branches 142 may extend parallel to the central axis 144 of the nozzle 102 and offset in the opposite direction relative to the central axis 144. The second gas passage 120 may include a single central passage 146 in fluid communication with the second inlet 124 and extend along or collinear with the central axis 144. In other embodiments, the first gas passage 118 may have more or fewer than two channel branches 142, and the second gas passage 120 may have more than one central passage 146, with the first gas passage 118 and / or the second gas passage 120 having other suitable spatial arrangements relative to the central axis 144 and / or to each other.
[0047] Reference Figure 3 and Figure 4 Each nozzle 102 further includes a nozzle assembly 148 attached to the injector body 140. In this embodiment, the nozzle assembly 148 includes a top layer 150 hermetically connected to the injector body 140 (e.g., via one or more seals 152) and has a central conduit 154 extending along the central axis 144 of the respective nozzle 102. The central conduit 154 includes a first inflation chamber inlet 156 (e.g., two elongated elliptical or kidney-shaped openings 158, etc.), which is fluidly inserted between a first gas passage 118 (e.g., two channel branches 142 in the injector body 140) and a first central feed inflation chamber 134. Figure 3 In this embodiment, the two elongated elliptical or kidney-shaped openings 158 are radially spaced outward from the central axis 144. In other embodiments, the first inflation chamber inlet 156 in the central conduit 154 of the top layer 150 may have more or fewer two openings of any other shape (e.g., one or more circular boreholes) and be arranged in a different spatial layout relative to each other and / or the central axis 144. As described in detail below, the central conduit 154 further includes a second inflation chamber inlet 160, which is fluidly inserted between the second gas passage 120 in the injector body 140 and the second central feed inflation chamber 138.
[0048] The nozzle assembly 148 further includes an intermediate layer 162 configured to be hermetically connected (e.g., by welding, diffusion bonding, mechanical fastening, etc.) to the top layer 150 to define a first central feed inflation chamber 134. The first central feed inflation chamber 134 is fluidly connected to a first gas passage 118 (e.g., two channel branches 142 in the injector body 140) in the injector body 140 via a first inflation chamber inlet 156 (e.g., two elongated elliptical or kidney-shaped openings 158 in the top layer 150) of the central conduit 154 of the top layer 150. Figure 2As shown, the first central feed inflation chamber 134 has an inner peripheral surface 164 facing radially inward toward the central axis 144, defining the interior 166 of the first central feed inflation chamber 134. The first central feed inflation chamber 134 includes a first outer edge region 168 and a first central region 170 located radially inward of the first outer edge region 168, the first central region 170 being fluidly connected to the first inflation chamber inlet 156 of the central conduit 154 of the top layer 150. The first central feed inflation chamber 134 also has an upper surface 172 and a lower surface 174 facing the upper surface 172 of the first central feed inflation chamber 134. As described in detail below, the intermediate layer 162 has a plurality of first holes 176 ( Figure 3 and Figure 4 The nozzle assembly 148 includes a central first hole 178 located at the center of the intermediate layer 162 and extending along the central axis 144 of the respective nozzle 102. The nozzle assembly 148 further includes a plurality of conduits 180 disposed in a plurality of second pillars 182, each second pillar 182 including a central second pillar 184 located on the central axis 144 of the nozzle 102. The first hole 176 is fluidly inserted between the interior 166 of the first central feed air chamber 134 and the conduits 180 in the second pillars 182, and the conduits 180 are fluidly inserted into the first hole 176 in the intermediate layer 162 and a first gas distribution port 130 in the panel surface 128. Also in this embodiment, the central first hole 178 passes through one or more channels (e.g., Figure 4 and Figure 6B The groove 186 shown below (and so on) is fluid-intercepted between the interior 166 of the first central feed gas chamber 134 and the conduit 180 in the central second pillar 184. The conduit 180 in the central second pillar 184 is fluid-intercepted between the central first hole 178 in the intermediate layer 162 and the central first gas distribution port 136 in the panel surface 128. The central first gas distribution port 136 can be used to allow one or more process gases to flow to the central portion of the substrate 110 (e.g., to deposit a uniform thin film on the substrate). As described in detail below, the intermediate layer 162 also has one or more second holes 188, which are fluid-intercepted between the second gas chamber inlet 160 of the central conduit 154 and the second central feed gas chamber 138 in the nozzle assembly 148.
[0049] Reference Figure 4The nozzle assembly 148 further includes a plurality of first posts 190 disposed within the first central feed chamber 134 and extending between the upper surface 172 and the lower surface 174 of the first central feed chamber 134. The first posts 190 are distributed within the interior 166 of the first central feed chamber 134. Each first post 190 may form a tensile and compressive load path between the upper surface 172 and the lower surface 174 of the first central feed chamber 134. In this embodiment, each first post 190 is joined to or integrally formed with the top layer 150 and the intermediate layer 162, thereby forming a continuous load path between the upper surface 172 and the lower surface 174 of the first central feed chamber 134 and curing the nozzle 102 in that region of the first central feed chamber 134. The first posts 190 may be evenly distributed in a checkerboard pattern within the interior 166 of the first central feed chamber 134. In other embodiments, the first pillars 190 may be distributed in a circular pattern within the interior 166 of the first central feed chamber 134, with the number of first pillars 190 in each circle increasing as the diameter of the first pillars 190 increases. In other embodiments, the number of first pillars 190 in each circle may remain constant as the diameter of the first pillars 190 increases. The first pillars 190 may be distributed uniformly or non-uniformly within the interior 166 of the first central feed chamber 134 in other patterns. Each first pillar 190 may have a cylindrical cross-section and curved sides, configured to allow a first gas to flow around the corresponding first pillar 190 and distribute the first gas within the first central feed chamber 134. In other embodiments, each first pillar 190 may have one or more flat, concave, and / or convex surfaces, configured to guide the flow of one or more processing gases within the first central feed chamber 134. In other embodiments, the nozzle assembly 148 may not include any of the first pillars 190 located within the first central feed chamber 134.
[0050] Reference Figure 5 The central conduit 154 in the top layer 150 further includes a second inflation chamber inlet 160 (e.g., a branch path) between a second gas passage 120 (e.g., a single central passage 146 in the injector body 140) fluidly inserted in the injector body 140 and a second central feed inflation chamber 138 in the nozzle assembly 148. In this embodiment, the branch path of the second inflation chamber inlet 160 may include an upper section 192 extending along the central axis 144 and fluidly connected to the second gas passage 120 (e.g., a single central passage 146 in the injector body 140). The branch path may further include branches with two second inflation chamber inlets 196 (e.g., Figure 6AThe lower section 194 of the two elongated oval or kidney-shaped openings 198 (e.g.) in the middle layer 162, the second inflation chamber inlet branch 196 is radially spaced outward from the central axis 144 and passes through one or more second holes 188 in the middle layer 162 (e.g. Figure 6B The intermediate layer 162 contains two elongated elliptical or kidney-shaped orifices 202, with fluid inserted between the upper section 192 of the second inflation chamber inlet 160 and the interior 200 of the second central feed inflation chamber 138. The two kidney-shaped orifices 202 in the intermediate layer 162 are fluidly isolated from the central first orifice 178 in the intermediate layer 162 and from one or more recesses 186 in the lower surface of the first central feed inflation chamber 134 in the respective nozzle 102. In one embodiment, the one or more recesses 186 may comprise a pair of linear recesses 186 on radially opposite sides of the central first orifice 178, fluidly connected to and extending outward from the central first orifice 178. In other embodiments, one or more top-opening recesses 186 in the lower surface 174 may be omitted, and the intermediate layer 162 may have one or more other suitable channels fluidly inserted between the first central feed inflation chamber 134 and the central first orifice 178 and fluidly isolated from the second inflation chamber inlet 160. A non-limiting embodiment of the one or more channels may include one or more orifices (e.g., circular orifices) through the intermediate layer 162. In some implementations, one or more holes may be drilled through the intermediate layer 162 and extend at any angle relative to any surface of the intermediate layer 162.
[0051] The nozzle assembly 148 further includes a bottom layer 204, with an intermediate layer 162 located between the top layer 150 and the bottom layer 204. The bottom layer 204 is configured to be hermetically connected to the intermediate layer 162 (e.g., by welding, diffusion bonding, mechanical fastening, etc.) to define a second central feed inflation chamber 138. The second central feed inflation chamber 138 is fluidly connected to a second gas passage 120 in the injector body 140 (e.g., a branch path comprising an upper section 192 and a lower section 194 having two second inflation chamber inlet branches 196 (e.g., two elongated elliptical or kidney-shaped openings 198) via a second inflation chamber inlet 160 in the top layer 150 (e.g., a single central passage 146 in the injector body 140). Figure 2Clearly shown, the second central feed inflation chamber 138 has an inner peripheral surface 206, which radially faces inward and defines the interior 200 of the second central feed inflation chamber 138 through a second inflation chamber inlet 160. The second central feed inflation chamber 138 includes a second outer edge region 208 and a second central region 209 located radially inward of the second outer edge region 208, the second central region 209 being fluidly connected to the second inflation chamber inlet 160 of the central conduit 154 in the top layer 150. The second central feed inflation chamber 138 also has an upper surface 210 and a lower surface 212 facing the upper surface 210 of the second central feed inflation chamber 138.
[0052] The nozzle assembly 148 further includes a second column 182 disposed in the second central feed air chamber 138 and extending between the upper surface 210 and the lower surface 212 of the second central feed air chamber 138. Figure 5 The second columns 182 are distributed within the interior 200 of the second central feed air chamber 138. Each second column 182 can form a tensile and compressive load path between the upper surface 210 and the lower surface 212 of the second central feed air chamber 138. In this embodiment, each second column 182 is bonded to or formed as an integral structure with the intermediate layer 162 and the bottom layer 204, thereby forming a continuous load path between the upper surface 210 and the lower surface 212 of the second central feed air chamber 138 and curing the nozzle 102 in that region of the second central feed air chamber 138. The second columns 182 can be uniformly distributed in a checkered pattern within the interior 200 of the second central feed air chamber 138. In other embodiments, the second columns 182 can be distributed in a circular pattern within the interior 200 of the second central feed air chamber 138, with the number of second columns 182 in each circle increasing as the diameter of the circle containing the second columns 182 increases. In other embodiments, the number of second columns 182 may remain constant as the diameter of the circle containing the second columns 182 increases. The second columns 182 may be distributed uniformly or non-uniformly within the interior 200 of the second central feed chamber 138 in other patterns. Each second column 182 may have a cylindrical cross-section and curved sides, configured to allow the second gas to flow around the corresponding second column 182 and distribute the second gas within the second central feed chamber 138. In other embodiments, each second column 182 may have one or more planar, concave, and / or convex surfaces, configured to guide the flow of one or more process gases within the second central feed chamber 138.
[0053] Go back and refer to Figure 3 and Figure 4Although the conduit 180 in the second column 182 is located in the second central feed inflation chamber 138, the conduit 180 in the second column 182 is fluidly isolated from the second central feed inflation chamber 138, and fluid is inserted between the first central feed inflation chamber 134 and the first gas distribution port 130 in the bottom layer 204. In this embodiment, the first hole 176 in the intermediate layer 162 is fluidly inserted between the interior 166 of the first central feed inflation chamber 134 and the conduit 180 in the second column 182. Figure 4 , Figure 6A and Figure 6B Clearly shown, the first hole 176 is distributed in the intermediate layer 162 and includes a central first hole 178 located at the center of the intermediate layer 162 and extending along the central axis 144 of the corresponding nozzle 102. The lower surface 174 of the first central feed aeration chamber 134 includes one or more grooves 186 between the interior 166 of the first central feed aeration chamber 134 and the central first hole 178.
[0054] The second inflation chamber inlet 160 of the central conduit 154 in the top layer 150 has an upper section 192 that is fluidly connected to a second gas passage 120 in the injector body 140 (e.g., a single central passage 146 in the injector body 140). The second inflation chamber inlet 160 further includes a lower section 194 (e.g., including two second inflation chamber inlet branches 196, such as two elongated elliptical or kidney-shaped openings 198), which is fluidly inserted between the upper section 192 and one or more corresponding second holes 188 (e.g., two elongated elliptical or kidney-shaped holes 202) in the intermediate layer 162. Figure 4 and Figure 6AAs shown, the second inflation chamber inlet 160 has an end 214 that is hermetically connected to the intermediate layer 162 at the lower surface 174 of the first central feed inflation chamber 134 to fluidly isolate the lower section 194 of the second inflation chamber inlet 160 and the second holes 188 in the intermediate layer 162 from one or more recesses 186 and the interior 166 of the first central feed inflation chamber 134. One or more second holes 188 in the intermediate layer 162 are fluidly inserted between the second inflation chamber inlet 160 of the central conduit 154 and the interior 200 of the second central feed inflation chamber 138. The bottom layer 204 further includes second gas distribution ports 132 located in the panel surface 128 of the respective nozzle 102, which are fluidly connected to the second central feed inflation chamber 138. In this embodiment, the top layer 150, the intermediate layer 162, and the bottom layer 204 are sheets of aluminum alloy (e.g., aluminum 6061) diffuse-bonded together. This increases the contact area between the surfaces of the respective layers, thereby increasing heat transfer between these layers and / or increasing the strength of the nozzle assembly 148. In other embodiments, the top layer 150, the intermediate layer 162, and / or the bottom layer 204 may be layers made of other materials, which are attached to each other by other fastening processes. For example, other embodiments of the top layer 150, the intermediate layer 162, and / or the bottom layer 204 may be made of other metals and their alloys (with or without metal / alloy filler sheets bonding the sheets together) and diffuse-bonded or welded together by applying force at a suitable high temperature, providing similar enhanced heat transfer and / or increased strength of the nozzle assembly 148. In other embodiments, the top layer 150, the intermediate layer 162, and / or the bottom layer 204 may be made of materials such as ceramics and plastics, and joined by other appropriate processes.
[0055] In other embodiments, the second inflation chamber inlet 160 of the central conduit 154 in the top layer 150 may have more or fewer numbers than the upper and lower sections. In embodiments where the second inflation chamber inlet 160 includes a lower section 194, the lower section 194 may have more than Figure 3 and Figure 6A The two shown have a second inlet branch 196 or a single channel. The second inlet branch 196 and / or the single channel can have any suitable shape, including shapes other than elongated ovals or kidney shapes, such as circles, ovals, and polygons.
[0056] Reference Figure 1 and Figure 2The semiconductor processing system 100 further includes a carrier assembly 216 having a top plate 218, the chamber surface 220 of which faces the internal volume 106 of the processing chamber 104. The chamber surface 220 has two or more edges 222 defining two or more corresponding holes 224 in the chamber surface 220. Each nozzle 102 further includes one or more gas curtain outlets 226 (i.e., annular gaps or a series of holes distributed at the gas flow outlets as described below) for providing an annular gas curtain surrounding the panel surface 128 of the nozzle 102. Each gas curtain outlet 226 includes a curtain gas channel 228 configured to allow one or more curtain gases (e.g., one or more non-reactive gases or one or more reactive gases to modify or adjust the uniformity of the wafer edge by providing edge flow of reactants, etc.) to flow. The carrier assembly 216 is configured to connect two or more nozzles 102, and to fix each nozzle 102 in a fixed position relative to the carrier assembly 216 within a corresponding hole 224 in the chamber surface 220, defining an annular gap 230 between the edge 222 of the top plate 218 and the outer edge region 232 of the panel surface 128 of the corresponding nozzle 102. Figure 7 The annular gap 230 is fluidly connected to the curtain gas channel 228 and configured to allow one or more curtain gases to flow along a cross-section having an annular cross-section. Figure 1 and Figure 2 And the flow follows the flow path 234 around the panel surface 128 of the nozzle 102. For example... Figure 1 As shown, the chamber surface 220 of the top plate 218 has an outer peripheral region 236 and a center 238 radially inwardly spaced from the outer peripheral region 236. A portion 240 of the annular gap 230 is located within the outer peripheral region 236 of the chamber surface 220. The chamber surface 220 of the top plate 218 includes a plurality of cleaning ports 242 distributed within the chamber surface 220. Figure 1 It is configured to allow one or more curtain gases to flow. One or more portions of the outer peripheral region 236 of the chamber surface 220 having one or more annular gaps 230 do not include a cleaning port 242.
[0057] Reference Figure 7Each nozzle 102 includes an annular flange 244, the mounting surface 246 of which faces radially outward relative to the central axis 144 of the nozzle 102. The carrier assembly 216 includes a locator surface 248 facing radially inward toward the central axis 144 of the corresponding nozzle 102. Each locator surface 248 is configured to engage with the mounting surface 246 of the corresponding nozzle 102, fixing the outer edge region 232 of the nozzle 102's panel surface in a fixed position relative to the corresponding edge 222, and providing an annular gap 230 between the edge 222 and the outer edge region 232 of the nozzle 102's panel surface. The curtain gas passage 228 includes a chamber portion 249 (i.e., a manifold) fluidly connected to a constriction section 250, which may have a predetermined length and be fluidly connected to the annular gap 230. The volume of the chamber portion 249 can be used as a manifold to uniformly distribute the curtain gas according to flow requirements.
[0058] In one embodiment, the constriction portion 250 of the curtain gas passage 228 and the annular gap 230 have an average radial width, and the ratio of the predetermined length L of the constriction portion 250 to the average radial width W of the constriction portion 250 is higher than a minimum ratio threshold (e.g., at least 10:1, meaning at least 10 units of length L of the constriction portion 250 is greater than 1 unit of radial width of the annular gap 230, etc.). In other embodiments, the minimum ratio threshold may be less than 10:1. Each nozzle 102 includes a nozzle constriction surface 252 radially outward facing the central axis 144 of the nozzle 102. The carrier assembly 216 includes a carrier constriction surface 254 for each nozzle constriction surface 252, each carrier constriction surface 254 radially inward facing the central axis 144 of the corresponding nozzle 102. Each carrier constriction surface 254 is radially spaced outward from the nozzle constriction surface 252 of the corresponding nozzle 102 to define a constriction portion 250 in fluid communication with the annular gap 230.
[0059] Reference Figure 8 The nozzle 102 may also include a cooling layer 256 mounted on one or more of the top layer 150, intermediate layer 162, and bottom layer 204. The cooling layer 256 includes one or more coolant channels 258 configured to circulate coolant to remove heat from the cooling layer 256, which in turn removes heat from the top layer 150, intermediate layer 162, and / or bottom layer 204 of the nozzle assembly 148, and from the central region of the substrate 110, to provide uniformity (e.g., thickness) of the film on the substrate 110.
[0060] Reference Figure 9The nozzle 102 may also include a heating layer 260 mounted on one or more of the top layer 150, the intermediate layer 162, and the bottom layer 204. The heating layer 260 includes one or more heating elements 262 (e.g., resistance heating wires) configured to generate and transfer heat to the heating layer 260, which in turn can transfer heat to one or more of the top layer 150, the intermediate layer 162, and the bottom layer 204, and assist one or more semiconductor processing operations.
[0061] The semiconductor processing system 100 may also include a controller 264 configured to control a valve 114 of the gas distribution system 112 to allow one or more processing gases to flow into the processing chamber 104 during semiconductor processing operations. More broadly, the controller 264 can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers (e.g., software) that execute program instructions. Program instructions may be instructions passed to the controller 264 in the form of various individual settings (or program files), defining operating parameters for performing a specific process on or for a semiconductor wafer or system, wherein processing gases flow from different gas sources 116 through one or more nozzles 102, thereby depositing material from the processing gas flow. In some implementations, the operating parameters may be part of a formulation defined by a process engineer for performing one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of substrate 110.
[0062] The nozzle assemblies and injector bodies discussed herein can be manufactured using conventional subtractive machining operations, such as milling, turning, drilling, etc. Specific embodiments disclosed or discussed herein may be particularly well-suited to this approach and allow the nozzle assembly and / or the injector body of such a nozzle to be manufactured as at least two separate parts, which are then assembled and welded together to provide a nozzle with an integral and fluid-isolated coolant flow path. While the aforementioned nozzles can be made and assembled from multiple conventionally machined or machinable components as shown, some or all of the aforementioned discrete components can be made into a single continuous assembly, for example using additive manufacturing (such as 3D printing), which allows some multi-part assemblies (e.g., nozzle assembly 148) to be manufactured as a single part having the same or similar characteristics as a multi-part equivalent assembly.
[0063] In some implementations, the nozzle designs discussed herein can be manufactured using additive manufacturing techniques, such as selective laser melting (SLM) (which can be used to produce ceramic or silicon versions of such nozzles) or direct metal laser melting (DMLM) (which can be used to produce metal versions). Specifically, the nozzle designs discussed herein can be particularly well-suited for manufacturing using laser powder bed fusion (LPBF) additive manufacturing techniques, which can include manufacturing processes such as SLM, DMLM, SLS (selective laser sintering), and DMLS (direct metal laser sintering), all of which can be used to manufacture metal-based parts (some of these processes, such as SLS and SLM, can be used to manufacture ceramic-based parts). In most additive manufacturing processes, parts are manufactured by adding one horizontal layer of material at a time; these layers can be very thin, for example, 0.02 mm at a time for DMLM parts. For example, in DMLM, a platform supporting the part is gradually lowered relative to a reference plane. The platform forms the “floor” of a cavity to accommodate the part being manufactured. Each time the platform is lowered, powder material is added to the cavity and then leveled until flush with the reference plane. The laser then scans the reference plane and applies heat to the topmost layer of powder material in the area where the desired structure is located, fusing the powder particles together with each other and with any previously fused underlying structures. After a specific layer is completed, the platform can be slightly lowered, a new layer of powder material applied, and the laser melting process repeated. This process is repeated until the part is complete, at which point the cavity of the DMLM device will be filled with unmelted powder material, and the additively manufactured part will be embedded within it.
[0064] For the purposes of this disclosure, the term "fluid connection" is used for volumes, chambers, orifices, etc., which may be connected to each other directly or through one or more intermediate components or volumes to form a fluid connection, similar to the term "electrical connection" used for components connected together to form an electrical connection. The term "fluid insertion" (if used) may refer to a component, volume, chamber, or orifice that is fluidly connected to at least two other components, volumes, chambers, or orifices such that fluid flowing from one of those other components, volumes, chambers, or orifices to another of those components, volumes, chambers, or orifices will first flow through the "fluidly inserted" component and then reach the other of those components, volumes, chambers, or orifices. For example, if a pump is fluidly inserted between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first flow through the pump and then reach the outlet. The term "fluid adjoining" (if used) refers to the placement of one fluid element relative to another fluid element such that no possible structure could be fluidly inserted between the two elements that could interrupt fluid flow between them. For example, in a flow path having a first valve, a second valve, and a third valve arranged sequentially along it, the first valve is adjacent to the second valve, the second valve is adjacent to both the first and third valves, and the third valve is adjacent to the second valve.
[0065] Unless otherwise specified, when the term “between” is used in conjunction with a range of numbers as used herein, it should be understood to include both the beginning and end values of that range. For example, “between 1 and 5” should be understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.
[0066] The above description is illustrative in nature and is not intended to limit the invention, its application, or use. The broad teachings of this invention can be implemented in various ways. Therefore, while specific examples are included, the true scope of the invention should not be so limited, as other variations will become apparent upon reading the drawings, the specification, and the following claims. For clarity, the same reference numerals will be used in the drawings to denote similar elements. As used herein, the phrase "at least one of A, B, and C" should be understood to refer to logic using the non-exclusive logic "OR" (A, B, or C). It should be understood that one or more steps of the method may be performed in a different order (or simultaneously) without altering the principles of the invention.
Claims
1. A nozzle for a semiconductor processing system, the nozzle comprising: A first gas passage containing a first inlet; A second gas passage, which is separated from the first gas passage within the nozzle and includes a second inlet separate from the first inlet, is disposed along the central axis of the nozzle; A panel surface includes multiple first gas distribution ports, the multiple first gas distribution ports being distributed on the panel surface and fluidly connected to the first gas channel within the nozzle, and the panel surface also has multiple second gas distribution ports, the multiple second gas distribution ports being distributed on the panel surface and fluidly connected to the second gas channel within the nozzle; A first central feed gas chamber, its fluid inserted between the first gas channel and the first gas distribution port, is separated from the panel surface by a first distance; and The second central feed gas chamber is fluidly inserted between the second gas channel and the second gas distribution port. The second central feed gas chamber is separated from the panel surface by a second distance shorter than the first distance. The first gas distribution port includes a central first gas distribution port located at the center of the panel surface.
2. The nozzle according to claim 1, further comprising: An injector body comprising a first gas passage having a first inlet and a second gas passage having a second inlet; and A nozzle assembly attached to the injector body, the nozzle assembly comprising: The first central feed gas chamber has a first outer edge region and a first central region located radially inside the first outer edge region. The first central feed gas chamber is fluidly connected to the first gas passage in the injector body. The first central feed gas chamber has an upper surface and a lower surface facing the upper surface. A plurality of first columns are located in the first central feed air chamber and extend between the upper surface and the lower surface of the first central feed air chamber. The second central feed gas chamber has a second outer edge region and a second central region located radially inside the second outer edge region. The second central feed gas chamber is fluidly connected to the second gas passage in the injector body. The second central feed gas chamber has an upper surface and a lower surface facing the upper surface of the second central feed gas chamber. A plurality of second columns are located in the second central feed gas chamber and extend between the upper surface and the lower surface of the second central feed gas chamber, the second columns comprising a plurality of conduits fluid-inserted between the first central feed gas chamber and the first gas distribution port.
3. The nozzle according to claim 2, wherein the first central feed air chamber has an inner peripheral surface facing inward, the inner peripheral surface defining the interior of the first central feed air chamber, and the first column is distributed in the interior of the first central feed air chamber.
4. The nozzle of claim 2, wherein the second central feed air chamber has an inner peripheral surface facing inward, the inner peripheral surface defining the interior of the second central feed air chamber, and the second column is distributed in the interior of the second central feed air chamber.
5. The nozzle according to any one of claims 2 to 4, wherein the nozzle assembly further comprises: The top layer includes a central conduit extending along the central axis of the nozzle, the central conduit including a first inflation chamber inlet between a first gas passage and a first central feed inflation chamber inserted in the injector body, and the central conduit further including a second inflation chamber inlet between a second gas passage and a second central feed inflation chamber inserted in the injector body. The bottom layer includes the first gas distribution port in the panel surface of the nozzle, and the first gas distribution port is fluidly connected to the conduit located in the second column of the second central feed chamber, and the bottom layer further includes the second gas distribution port in the panel surface of the nozzle, and the second gas distribution port is fluidly connected to the second central feed chamber; and An intermediate layer located between the top layer and the bottom layer includes a plurality of first holes through which fluid is inserted between the conduit located in the second column of the second central feed air chamber and the conduit therein. The intermediate layer also has one or more second holes through which fluid is inserted between the inlet of the second air chamber and the interior of the second central feed air chamber.
6. The nozzle of claim 5, wherein each of the first columns is joined to or integral with the top layer and the intermediate layer, thereby forming a continuous load path between the upper surface of the first central feed air chamber and the lower surface of the first central feed air chamber, and reinforcing the nozzle in the region of the first central feed air chamber.
7. The nozzle of claim 6, wherein each of the second columns is joined to or integral with the intermediate layer and the bottom layer, thereby forming a continuous load path between the upper surface of the second central feed air chamber and the lower surface of the second central feed air chamber, and reinforcing the nozzle in the region of the second central feed air chamber.
8. The nozzle of claim 7, wherein the top layer, the intermediate layer and the bottom layer are diffusely bonded together, and the top layer is hermetically connected to the injector body.
9. The nozzle according to claim 7, wherein: The top layer is configured to be hermetically connected to the injector body; The intermediate layer is configured to be hermetically connected to the top layer to define the first central feed inflation chamber, and each of the first columns forms a tensile and compressive load path between the upper surface and the lower surface of the first central feed inflation chamber. as well as The bottom layer is configured to be hermetically connected to the intermediate layer to define the second central feed inflation chamber, and each of the second columns forms a tensile and compressive load path between the upper surface and the lower surface of the second central feed inflation chamber.
10. The nozzle according to claim 7, wherein: The first hole of the intermediate layer is distributed in the intermediate layer and includes a central first hole at the center of the intermediate layer along the central axis of the nozzle; as well as The lower surface of the first central feed inflation chamber includes one or more grooves that are fluidly inserted between the interior of the first central feed inflation chamber and the central first hole located at the center of the intermediate layer.
11. The nozzle according to claim 10, wherein: The second inflation chamber inlet has an upper section that is fluidly connected to the second gas passage of the injector body, and the second inflation chamber inlet further includes one or more lower sections that are fluidly inserted into one or more corresponding second holes in the upper section and the intermediate layer; as well as The second inflation chamber inlet has an end that is sealed to the intermediate layer at the lower surface of the first central feed inflation chamber to separate the one or more lower sections of the second inflation chamber inlet and the corresponding one or more second holes in the intermediate layer from the one or more grooves and the interior of the first central feed inflation chamber.
12. The nozzle according to claim 10 or 11, wherein the one or more grooves comprise two linear grooves fluidly connected to the two diametrically opposed sides of the central first hole located at the center of the intermediate layer.
13. The nozzle of claim 11, wherein the one or more lower sections of the second inflation chamber inlet comprise two kidney-shaped openings fluidly inserted between the upper section of the second inflation chamber inlet and the corresponding one or more second holes in the intermediate layer.
14. The nozzle of claim 13, wherein the one or more second holes in the intermediate layer comprise two kidney-shaped openings, fluidly inserted between the two kidney-shaped openings at the inlet of the second inflation chamber and the interior of the second central feed inflation chamber.
15. The nozzle of claim 14, wherein the two kidney-shaped openings in the intermediate layer are fluidly isolated from the central first hole of the intermediate layer and from the one or more grooves in the lower surface of the first central feed chamber within the nozzle.
16. The nozzle of claim 5, wherein the nozzle assembly further comprises a cooling layer mounted to one or more of the top layer, the intermediate layer and the bottom layer, and the cooling layer comprises one or more coolant channels configured to circulate coolant to carry heat away from the cooling layer.
17. The nozzle of claim 5, wherein the nozzle assembly further comprises a heating layer mounted to one or more of the top layer, the intermediate layer and the bottom layer, and the heating layer comprises one or more heating elements configured to transfer heat to the heating layer.
18. The nozzle of claim 2, wherein each of the first columns is a cylinder having a curved side surface configured to allow a first gas to flow around the respective first column and distribute the first gas to the entire first central feed chamber.
19. The nozzle of claim 2, wherein each of the second columns is a cylinder having curved sides configured to allow a second gas to flow around the respective second column and distribute the second gas to the entire second central feed chamber.
20. The nozzle of claim 1, wherein at least a portion of the nozzle is made of metal, alloy, ceramic or plastic.
21. An apparatus comprising: one or more nozzles according to claim 1; and One or more gas curtain outlets are configured to provide an annular gas curtain around the panel surface of the nozzle.
22. The apparatus according to claim 21, wherein: Each of the one or more gas curtain outlets includes a curtain gas channel configured to allow one or more curtain gases to flow. The semiconductor processing system includes a carrier assembly with a top plate having a chamber surface facing the internal volume of a processing chamber, the chamber surface having two or more edges defining two or more corresponding holes in the chamber surface; The carrier assembly is configured to engage two or more of the nozzles and hold each nozzle in a fixed position relative to the carrier assembly in a corresponding hole in the chamber surface, and define an annular gap between the corresponding edge of the top plate and the outer edge region of the panel surface of the corresponding nozzle. as well as The annular gap is fluidly connected to the curtain gas channel and is configured to allow the one or more curtain gases to flow along a flow path having an annular cross-section around the panel surface of the nozzle.
23. The apparatus according to claim 22, wherein: The chamber surface of the top plate has an outer peripheral region and a center that is radially spaced inward from the outer peripheral region; The annular gap has a portion located in the outer peripheral region of the chamber surface; The chamber surface of the top plate includes a plurality of cleaning ports distributed on the chamber surface, the plurality of cleaning ports being configured to allow flow of the one or more curtain gases; as well as One or more portions of the outer peripheral region of the chamber surface having the annular gap do not contain the cleaning port.
24. The apparatus according to claim 23, wherein: Each nozzle includes an annular flange having a mounting surface radially outward relative to the central axis of the nozzle; and The carrier assembly includes: locator surfaces radially inward toward the central axis of the respective nozzle, each of the locator surfaces being configured to engage the mounting surface of the respective nozzle and maintain the outer edge region of the panel surface of the nozzle in a fixed position relative to the respective edge, and providing the annular gap between the edge and the outer edge region of the panel surface of the nozzle.
25. The apparatus according to claim 24, wherein: The curtain gas channel includes a constricted portion having a predetermined length and fluidly connected to the annular gap; and The curtain gas channel further includes a chamber portion fluidly connected to the contraction section and has a volume based on flow requirements to serve as a manifold for the uniform distribution of the curtain gas.
26. The apparatus according to claim 25, wherein: Each nozzle includes a nozzle contraction surface that faces radially outward relative to the central axis of the nozzle; and The carrier assembly includes a carrier contraction surface for each of the nozzle contraction surfaces, each of the carrier contraction surfaces being radially inward toward the central axis of the corresponding nozzle, and each of the carrier contraction surfaces being radially outwardly spaced from the nozzle contraction surface of the corresponding nozzle to define the contraction portion fluidly connected to the annular gap.
27. The apparatus of claim 22, further comprising a gas distribution system including a plurality of controllable valves for selectively directing one or more processing gases from a plurality of different gas sources connectable to the gas distribution system to the one or more nozzles.