Super-resolution in-situ multimodal flexible sensing networks, their fabrication methods and applications

Abstract

This invention belongs to the technical field of flexible electronic sensor devices. It discloses a super-resolution in-situ multimodal flexible sensing network, its fabrication method, and its application. The network includes multiple arrayed sensing units. The sensing network comprises a lower substrate, a first electrode layer, a pressure-sensitive film, a second electrode layer, an upper substrate, leads, mechanical sensing protrusions, and a third electrode layer, all connected to each other. The third electrode layer is connected to both the leads and the second electrode layer. The first electrode layer has pins A and B; the second electrode layer has pins C and D; and the leads have pin E. Sensing units in the same row share pins A, B, and E. Pins A and B in each row are integrated to form standard row interfaces A and B, respectively, and pin E is integrated to form a standard row interface E. Sensing units in the same column share pins C and D. Pins C and D in each row are integrated to form standard column interfaces C and D, respectively. Simple overall interconnection is achieved between the sensing units.

Description

Technical Field

[0001] This invention belongs to the technical field of flexible electronic devices, and more specifically, relates to a super-resolution in-situ multimodal flexible sensing network, its fabrication method, and its application. Background Technology

[0002] Compared to traditional rigid sensors, flexible sensors offer advantages such as comfortable wear, deformability, and thinness, leading to their widespread research and application in aerospace, medical devices, and robotics. However, human-computer interaction and health monitoring often require high-resolution tactile sensing and recognition of multiple physical quantities, including pressure, shear force, proximity, and temperature. Therefore, current flexible sensing technologies are gradually overcoming the limitations of single-point or distributed measurements, moving towards multimodal, large-area, and high-density array-based approaches.

[0003] Existing technologies have proposed some feasible integration schemes. For example, patent CN110987089 proposes a multifunctional sensor with a single metal layer, which integrates the testing functions of temperature, strain, flow rate and humidity in a single electrode layer, and only requires 4 port leads. However, this scheme is only applicable to the fabrication of a single sensing unit, and has great wiring difficulty in array fabrication. Hua et al. proposed a scheme for vertically integrated multifunctional sensor in the literature (Hua Q, Sun J, Liu H, et al. Skin-inspired highly stretchable and conformable matrix networks for multifunctional sensing[J]. Nature communications,2018,9(1):244”). This stretchable sensing network has the function of measuring seven physical quantities such as temperature, plane strain and humidity. However, its various measurement functions are interspersed on different layers and different units of the sensing network, which has defects such as low single physical quantity sensing resolution, low ratio of sensing network function number to lead number, complex lead interface, etc., and the fabrication is not holistic.

[0004] Therefore, with the increase in sensing functions and the number of sensing units, challenges arise such as the large hardware burden of in-situ integration of functions and network expansion. Summary of the Invention

[0005] To address the aforementioned deficiencies or improvement needs of existing technologies, this invention provides a super-resolution in-situ multimodal flexible sensor network, its fabrication method, and its applications. Through structural design of each electrode layer in the sensor network, it achieves contact measurement (pressure, shear force, temperature), proximity measurement, and on-demand switching based on resistive and capacitive sensing mechanisms, thereby improving the function-to-lead ratio of the sensor network. Furthermore, the sensor network, combined with intelligent algorithms, further enhances the multimodal spatial resolution of the sensor network.

[0006] To achieve the above objectives, according to one aspect of the present invention, a super-resolution in-situ multimodal flexible sensing network is provided. The sensing network includes multiple sensing units arranged in an array. The sensing network comprises, from bottom to top, a lower substrate, a first electrode layer, a pressure-sensitive film, a second electrode layer, an upper substrate, leads, a mechanical sensing protrusion, and a third electrode layer. The third electrode layer is connected to both the leads and the second electrode layer.

[0007] Pins A and B are provided on one side of the first electrode layer; pins C and D are provided on one side of the second electrode layer; pin E is provided on the lead wire; pins A, B, and E of the sensing units located in the same row in the sensing network are shared respectively; pins A and B of each row are integrated on the first electrode layer and lead out to row standard interface A and row standard interface B respectively; pin E is integrated and leads out to row standard interface E; pins C and D of the sensing units in the same column are shared respectively; pins C and D of each row are integrated on the second electrode layer and lead out to column standard interface C and column standard interface D respectively.

[0008] Furthermore, the first electrode layer is a flat plate electrode with 2×2 sensing areas; the second electrode layer is a flat plate electrode with 2×2 sensing areas; the first electrode layer, the second electrode layer, the pressure-sensitive film, and the mechanical sensing protrusion constitute a piezoresistive mechanical sensor; when a positive pressure is applied, the magnitude of the pressure is obtained by measuring the change in resistance between pins A, B, C, and D; when a shear force is applied, the magnitude of the shear force is obtained by measuring the difference in the change in resistance between pins A, B, C, and D.

[0009] Furthermore, this piezoresistive force sensor is used to measure pressure and shear force. When a positive pressure is applied, no torque is generated on the force sensing protrusion, and uniform pressure is applied throughout the sensing area, transmitting uniform pressure to the pressure-sensitive film. The applied pressure is calculated by averaging the resistance values ​​between any two pins of pins A, B, C, and D. When a shear force is applied, a torque is generated on the force sensing protrusion, transmitting uneven force to the pressure-sensitive film. The force on each sensing area is calculated by measuring the resistance values ​​between any two pins of pins A, B, C, and D and calculating the difference. The magnitude of the shear force is then calculated using the difference and the geometric structure.

[0010] Furthermore, the third electrode layer includes a first resistor, a second resistor, and a third resistor. The first resistor is made of a temperature-sensitive material and has a bent sensitive gate structure. The first resistor is used to sense temperature changes. One end of the first resistor has a pin E', which is interconnected with a lead wire. The other end has a pin D'". Pin D' is interconnected with the equipotential point D' of pin D on the second electrode layer and is connected in series with the second resistor. One end of the second resistor is interconnected with the equipotential point D' of pin D on the second electrode layer, and the other end is left floating. One end of the third resistor has a pin C'. Pin C' is interconnected with the equipotential point C' of pin C, and the other end is left floating.

[0011] Furthermore, the first resistor is a thermistor, and the temperature change is calculated by measuring the change in resistance between pin D and pin E.

[0012] Furthermore, both the second resistor and the third resistor are spiral-shaped, and together they constitute a capacitive proximity sensor for sensing and measuring proximity signals.

[0013] Furthermore, the materials of the second and third resistors have a temperature coefficient of resistance of less than 4 × 10⁻⁶. -5 The material at / ℃, the material of the first resistor has a temperature coefficient of resistance greater than 3×10⁻⁶. -3 Materials at / ℃.

[0014] Furthermore, the sensor network is connected to a multiplexer and a double-pole double-throw mechanical switch via leads from row standard interface A, row standard interface B, row standard interface E, column standard interface C, and column standard interface D. This connection enables real-time switching between measurement units and different measurement functions within the sensor network.

[0015] This invention provides a method for fabricating a super-resolution in-situ multimodal flexible sensing network, which is used to fabricate the super-resolution in-situ multimodal flexible sensing network as described above.

[0016] The present invention also provides an application of the super-resolution in-situ multimodal flexible sensing network described above in measuring pressure, shear force, temperature, and proximity.

[0017] In summary, compared with the prior art, the super-resolution in-situ multimodal flexible sensing network, its fabrication method, and its application provided by this invention have the following beneficial effects:

[0018] 1. This invention provides an array integration scheme for in-situ multimodal sensing units. Through the structural and material design of each layer of electrodes, a single sensing unit can realize in-situ measurement of multiple physical quantities. The sensing units are simply interconnected as a whole, and the pins of each unit in the sensing network are brought out through a standard interface.

[0019] 2. A scheme for interchangeable sensor unit leads and multiplexing of sensor array leads was designed. Through the combination of multi-functional switching of sensor unit leads and a common electrode design for sensor units, a significant reduction in the measurement parameter / lead ratio was achieved. For example, in an m×n sensor network, only 2m+3n leads are needed to measure 4×m×n basic quantities, meaning the measurement parameter / lead ratio of this sensor network is 4mn / (2m+3n). Furthermore, this value increases with the number of rows and columns of sensor units on the sensor network. For example, for a single sensor unit, this ratio is 4 / 5; while for a 10×10 sensor network, this ratio can reach 8.

[0020] 3. Measurements between sensing units can be further coupled to improve resolution and vectorize measurements. Multiple sensing units will respond to stimuli applied to non-functional regions between sensing units.

[0021] 4. By training the algorithm model with a small sample dataset of response values ​​and stimulus size and location from multiple sensing units in the early stage, the position and size of stimulus input on non-sensory units can be estimated in subsequent measurements, overcoming the accuracy limitations of geometric structure and realizing vectorized data output. Attached Figure Description

[0022] Figure 1 This is a two-dimensional schematic diagram of a super-resolution in-situ multimodal flexible sensing network provided by the present invention;

[0023] Figure 2 a, b, c, d, and e in the text are respectively Figure 1 A schematic diagram of the sensing unit of the super-resolution in-situ multimodal flexible sensing network, a schematic diagram of the sensing unit subjected to normal pressure and shear force, and a schematic diagram of the first resistance of the third electrode layer of the sensing unit and the third electrode layer.

[0024] Figure 3 a and b in the text are respectively Figure 1 Schematic diagram and top view of the sensor unit of the super-resolution in-situ multimodal flexible sensor network in the image;

[0025] Figure 4 yes Figure 1 A schematic diagram of the three-dimensional structure of the super-resolution in-situ multimodal flexible sensor network in the image;

[0026] Figure 5 yes Figure 1 A schematic diagram of the multiplexing switch logic circuit in the super-resolution in-situ multimodal flexible sensor network.

[0027] Figure 6 This is a logic block diagram of the super-resolution vectorized measurement program constructed in this invention;

[0028] Figure 7 This is a flowchart illustrating the fabrication process of the in-situ multimodal flexible sensing network constructed according to the present invention.

[0029] In all the figures, the same reference numerals are used to denote the same elements or structures, wherein: 1-lower substrate, 2-first electrode layer, 3-pressure-sensitive film, 4-second electrode layer, 5-upper substrate, 6-lead, 7-through hole, 8-mechanical sensing boss, 9-third electrode layer. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0031] Please see Figure 1 , Figure 2 and Figure 3 The present invention provides a super-resolution in-situ multimodal flexible sensing network, which includes multiple sensing units arranged in an array; the sensing units are mechanically and electrically interconnected through a serpentine wire structure, and all wires are led out with standard interfaces.

[0032] The sensing unit includes, from bottom to top, a lower substrate 1, a first electrode layer 2, a pressure-sensitive film 3, a second electrode layer 4, an upper substrate 5, a lead wire 6, a mechanical sensing protrusion 8, and a third electrode layer 9. The third electrode layer 9 is connected to both the lead wire 6 and the second electrode layer 4.

[0033] The first electrode layer 2 and the second electrode layer 4 are respectively disposed on the lower substrate 1 and the upper substrate 5. The first electrode layer 2 is a planar electrode with 2×2 sensing areas, and pins A and B are disposed on one side. The second electrode layer 4 is a planar electrode with 2×2 sensing areas, and pins C and D are disposed on one side.

[0034] The lead wire 6 is made of a conductive material with good electrical conductivity and has pins E. The pressure-sensitive film 3 is made of a pressure-sensitive material with moderate conductivity and is set as a whole film without planar structure in the sensing network to transmit mechanical stimulation at the location of non-sensing units.

[0035] The force-sensing protrusion 8 is disposed in the middle of the upper substrate 5 and is used to transmit pressure and shear forces. The third electrode layer 9 is made of two different materials and consists of three sections of resistors. The third electrode layer 9 is interconnected with the second electrode layer 4 and the lead wire 6 through through holes 7 formed in the force-sensing protrusion 8 and the upper substrate 5.

[0036] The third electrode layer 9 includes a first resistor, a second resistor, and a third resistor. The first resistor is made of a temperature-sensitive material and has a bent sensitive gate structure. The first resistor is used to sense temperature changes. One end of the first resistor is provided with a pin E', which is interconnected with the lead 6. The other end is provided with a pin D', which is interconnected with the equipotential point D' of pin D on the second electrode layer 4 and connected in series with the second resistor.

[0037] Both the second and third resistors are made of temperature- and strain-insensitive materials, and they are arranged in a spiral alternating pattern. One end of the second resistor is interconnected with the equipotential point D' of pin D on the second electrode layer 4 (shown as D”), while the other end is left floating. One end of the third resistor is provided with pin C”, which is interconnected with the equipotential point C' of pin C (shown as C”), while the other end is left floating. A planar capacitor is formed between the first and second resistors, and this planar capacitor is used for proximity signal sensing and measurement.

[0038] The first electrode layer 2, the second electrode layer 4, the pressure-sensitive film 3, and the mechanical sensing protrusion 8 constitute a piezoresistive force sensor. When a positive pressure is applied, no torque is generated on the mechanical sensing protrusion 8, and uniform pressure is applied throughout the sensing area, transmitting uniform pressure to the pressure-sensitive film 3. The applied pressure is calculated by averaging the resistance values ​​between any two pins of pins A, B, C, and D. Under shear force, a torque is generated on the mechanical sensing protrusion 8, transmitting uneven force to the pressure-sensitive film 3. The force on each sensing area is calculated by measuring the resistance values ​​between any two pins of pins A, B, C, and D and calculating the difference. The magnitude of the shear force is then calculated using the difference and the geometric structure.

[0039] The first resistor is a thermistor, which is led out through pins D and E to achieve temperature measurement. When the temperature rises / falls, the corresponding resistance of the thermistor will also increase / decrease. The curved sensitive grid design and the large temperature resistivity of the material enhance the sensing sensitivity. The temperature change is calculated by measuring the change in resistance between pins D and E.

[0040] Both the second and third resistors are helical in shape, forming a capacitive proximity sensor. As an object approaches or moves away, the capacitance between the helices changes accordingly. By measuring the capacitance change between pin C and pin E, the distance between the object and the sensing unit can be calculated.

[0041] Please see Figure 4 In this sensor network, the pins A, B, and E of the sensing units located in the same row are shared. After the pins A and B of each row are integrated on the first electrode layer 2, they are respectively led out as row standard interface A and row standard interface B. After the pins E are integrated, they are led out as row standard interface E. The pins C and D of the sensing units in the same column are shared. After the pins C and D of each row are integrated on the second electrode layer 4, they are respectively led out as column standard interface C and column standard interface D.

[0042] For an m×n sensor network, an m×n sensor network can measure 4×m×n basic quantities. The total number of leads required is 2m+3n, that is, the sensor network function / lead count is 4mn / (2m+3n). As the number of sensing units in the sensor network increases, this value increases significantly.

[0043] Pins A, B, and E of each sensing unit within the same row are shared. Pins A and B of each row are integrated on the first electrode layer 2 and brought out as the row standard interface, with a pin count of 2n, denoted as {A}. n}{B n The pins E of each row are integrated in the lead layer and brought out as the standard interface for the row, with n pins denoted as {E}. n}. The pins C and D of each sensing unit within the same column are shared. The pins C and D of each row are integrated on the second electrode layer 4 and then led out as a standard column interface, with a lead count of 2m, denoted as {C}. m}{D m}

[0044] In this embodiment, the lower substrate 1 and the upper substrate 5 are flexible insulating films, preferably made of polyimide, polydimethylsiloxane, or thermoplastic polyurethane elastomer, with a thickness preferably between 10 μm and 50 μm; the first electrode layer 2, the second electrode layer 4, and the lead wire 6 are preferably made of gold, silver, or copper, with a thickness preferably between 100 nm and 1 μm; the second resistor and the third resistor are preferably made of materials with a resistance temperature coefficient of less than 4 × 10⁻⁶. -5 The material at / ℃, the material of the first resistor has a temperature coefficient of resistance greater than 3×10⁻⁶. -3 The material is designed to ensure that only the first resistor has high temperature sensitivity, reducing the coupling between temperature and proximity measurement. The thickness of the third electrode layer 9 is preferably 100 nm-1 μm; the material of the pressure-sensitive film 3 is a conductive composite material formed by mixing conductive material and elastomer polymer, with a resistivity greater than 500 Ω·cm, and a thickness preferably 100 μm-500 μm; the material of the mechanical sensing protrusion 8 is a flexible insulating and heat-insulating material, such as polydimethylsiloxane, thermoplastic polyurethane elastomer, or styrene block copolymer, and a thickness preferably 1 mm.

[0045] Please see Figure 5This invention connects the leads from the row and column standard interfaces in the in-situ multimodal flexible sensor network to multiplexers and double-pole double-throw mechanical switches. This connection method allows for real-time switching of measurement units and different measurement functions within the sensor network. Taking a 4×4 sensor network as an example, row interfaces A1-A4, B1-B4, and E1-E4 are connected to multiplexer S1, and column interfaces C1-C4 and D1-D4 are connected to multiplexer S2. The outputs of S1 and S2 are connected to resistance and capacitance measurement devices respectively via switches S3 and S4. Through this logic circuit, multiplexer S1 controls the selection of the row position of the sensing unit in the multimodal flexible sensor network and the switching of the A, B, and E row pins on the sensing unit. Multiplexer S2 controls the selection of the column position of the sensing unit in the multimodal flexible sensor network and the switching of the C and D column pins on the sensing unit, and closes switch S3 or S4 as needed to measure resistance or capacitance. For example, by selecting row interface B2 with multiplexer S1, selecting column interface C4 with multiplexer S2, and closing switch S3, the resistance of the lower left region of the sensing unit in the 2nd row and 4th column of the sensor network can be measured, and the contact force can be further calculated. As another example, by selecting row interface E1 with multiplexer S1, selecting column interface C2 with multiplexer S2, and closing switch S4, the capacitance of the proximity sensing unit in the 1st row and 2nd column of the sensor network can be measured, and the proximity distance can be calculated. By selecting row interface E3 with multiplexer S1, selecting column interface D1 with multiplexer S2, and closing switch S3, the resistance of the temperature sensing unit in the 3rd row and 1st column of the sensor network can be measured, and the contact temperature between the object and the sensing unit can be calculated.

[0046] Please see Figure 6 For contact-based pressure measurement, if the pressure application area is not on the sensing unit, multiple adjacent sensing units will all generate responses. By judging the relationship between the response values ​​of neighboring units and the point of force application, the pressure application location can be more accurately located. For non-contact proximity distance measurement, multiple neighboring sensing units will generate uneven responses. The scalar value of the distance can be determined by the unit response values, and then the vector value of the proximity position can be determined by the scalar values ​​of multiple sensing units. Specifically, in this embodiment, this process is implemented by training a Bayesian network model without explicit calculation of the measurement formula: First, the values, locations, and sensing unit responses of the applied stimulus are collected on the sensing network to train the model. Subsequently, in actual measurement, the approximate area of ​​stimulus application is determined by the sensing unit with the most drastic change in resistance / capacitance. This area is roughly divided into four sub-regions (upper left, lower left, upper right, and lower right), and the sub-region of stimulus application is determined by the responses of the adjacent sensing units of this unit. The responses of this subdivided sensing unit and the sensing units adjacent to its sub-region are input into the neural network for position coordinate estimation and vector calculation.

[0047] Please see Figure 7 The fabrication method of the in-situ multimodal flexible sensing network mainly includes the following steps:

[0048] S1 Selects a flexible substrate, and uses magnetron sputtering to form the flexible thin film required for the first electrode layer 2, the second electrode layer 4 and the lead wire 6 on the substrate material;

[0049] S2 uses a femtosecond laser to perform metal patterning ablation and substrate cutting on the above-mentioned flexible film to form the first electrode layer 2, the second electrode layer 4 and the lead wire 6.

[0050] S3 selects a mold and pours material into the mold to form a mechanical sensing boss 8;

[0051] S4 sputters different metal materials in sections on the mechanical sensing boss 8 to form the metal thin film required for the third electrode layer 9;

[0052] S5 Select a mold and pour the pressure-sensitive composite material solution onto the mold to obtain the required pressure-sensitive film 3;

[0053] S6 stacks the lower substrate 1 with the first electrode layer 2, the pressure-sensitive film 3, the upper substrate 5 with the second electrode layer 4 and the lead wire 6, and the mechanical sensing protrusion 8 with the third electrode layer 9 from bottom to top to obtain a semi-finished in-situ multimodal flexible sensing network.

[0054] S7 uses a femtosecond laser to process the pattern of the third electrode layer 9 and the through-hole 7 on the assembled semi-finished sensor network;

[0055] S8 fills the through-hole 7 with conductive material to form the desired in-situ multimodal flexible sensing network.

[0056] The following is a detailed embodiment of the method for fabricating a 4×4 multimodal flexible sensor network, mainly including the following steps:

[0057] S1. A flexible thin film with an electrode layer was prepared. A 10 μm thick polyimide film was selected, cleaned with anhydrous ethanol, and dried with an air gun. Copper of 200 nm was deposited on one or both sides of the film by magnetron sputtering with a power of 60 W and a vacuum of 0.8 Pa.

[0058] S2 flexible film patterning. Using a 355nm laser, excess copper layer on the copper-clad polyimide flexible film is removed at parameters of 1.5W and 2000mm / s, and the copper-clad polyimide film is cut at parameters of 1.05W and 200mm / s to form a patterned upper substrate 5, a first electrode layer 2, a lower substrate 1, a second electrode layer 4, and a lead layer.

[0059] Preparation of S3 mechanical sensing boss 8. A polytetrafluoroethylene mold was prepared by machining, and a prepared PDMS solution was poured into the mold. After curing at 50°C, the PDMS boss was removed with tweezers.

[0060] The third electrode layer 9 is a metal thin film prepared by S4. 200 nm copper and 200 nm platinum are sputtered onto the PDMS protrusion surface in a time-division manner using magnetron sputtering parameters of 60 W power and 0.8 Pa vacuum.

[0061] S5 Preparation of Pressure-Sensitive Film 3. 0.1 g of 30 nm-50 nm multi-walled carbon nanotubes were added to 8 g of N,N-dimethylformamide solvent and ultrasonically dispersed at 300 W for 10 min. Then, 2 g of thermoplastic polyurethane particles were added and ultrasonically dispersed at 300 W for 30 min. The resulting thermoplastic polyurethane-carbon nanotube dispersion was poured onto a polytetrafluoroethylene plate and cured at 80 °C for 2 h. The plate was then removed and cut into 40 mm × 40 mm pieces for later use.

[0062] S6 Pre-bonded Sensing Network. The lower substrate 1 with the first electrode layer 2, the pressure-sensitive film 3, the upper substrate 5 with the second electrode layer 4 and leads, and the mechanical sensing protrusion 8 with the metal film are aligned and bonded from bottom to top to obtain a semi-finished in-situ multimodal flexible sensing network.

[0063] The third electrode layer 9 and via 7 are fabricated using S7. A 355nm laser is used at 1.5W and 2000mm / s to remove excess copper and platinum layers from the PDMS boss, forming a patterned third electrode layer 9. The via 7 is then fabricated on the PDMS boss and the upper substrate 5 at a power of 7.5W and 100mm / s.

[0064] S8 fills the through-hole 7. Conductive silver paste is sprayed into the through-hole 7 multiple times until the third electrode layer 9 and the lead and second electrode layer 4 are connected.

[0065] This invention also provides an application of the aforementioned in-situ multimodal flexible sensing network in measuring pressure, shear force, temperature, and proximity. First, data is collected from the fabricated in-situ multimodal flexible sensing network. The sensor responses and the numerical values ​​and vector position coordinates of the applied stimuli are used to train a high-resolution algorithm model for machine learning. Then, the sensor network's response is used as input to the high-resolution algorithm model, outputting the precise vector position identified by the algorithm, thus giving the multimodal flexible sensing network super-resolution and vectorized measurement characteristics.

[0066] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A super-resolution in-situ multimodal flexible sensing network, characterized in that: The sensing network includes multiple sensing units arranged in an array; the sensing network includes, from bottom to top, a lower substrate, a first electrode layer, a pressure-sensitive film, a second electrode layer, an upper substrate, leads, a mechanical sensing protrusion, and a third electrode layer; the third electrode layer is connected to the leads and the second electrode layer respectively. Pins A and B are provided on one side of the first electrode layer; pins C and D are provided on one side of the second electrode layer; pin E is provided on the lead wire; pins A, B, and E of the sensing units in the same row of the sensing network are shared respectively; pins A and B of each row are integrated on the first electrode layer and lead out to row standard interface A and row standard interface B respectively; pin E is integrated and leads out to row standard interface E; pins C and D of the sensing units in the same column are shared respectively; pins C and D of each row are integrated on the second electrode layer and lead out to column standard interface C and column standard interface D respectively. The third electrode layer includes a first resistor, a second resistor, and a third resistor. The first resistor is made of a temperature-sensitive material and has a bent sensitive grid structure. The first resistor senses temperature changes; one end has a pin E' connected to a lead wire, and the other end has a pin D'' connected to the equipotential point D' of pin D on the second electrode layer, and is connected in series with the second resistor. One end of the second resistor is connected to the equipotential point D' of pin D on the second electrode layer, and the other end is left floating. One end of the third resistor has a pin C'' connected to... The equipotential points C' of pin C are interconnected, with the other end suspended. When positive pressure is applied, the magnitude of the pressure is obtained by measuring the change in resistance between pins A, B, C, and D. When shear force is applied, the magnitude of the shear force is obtained by measuring the difference in resistance between pins A, B, C, and D. The first resistor is a thermistor, and the temperature change is calculated by measuring the change in resistance between pins D and E. The second and third resistors are both helical, and together they constitute a capacitive proximity sensor for sensing and measuring proximity signals.

2. The super-resolution in-situ multimodal flexible sensing network as described in claim 1, characterized in that: The first electrode layer is a flat plate electrode with 2×2 sensing areas; the second electrode layer is a flat plate electrode with 2×2 sensing areas; the first electrode layer, the second electrode layer, the pressure-sensitive film, and the mechanical sensing protrusion constitute a piezoresistive mechanical sensor.

3. The super-resolution in-situ multimodal flexible sensing network as described in claim 2, characterized in that: This piezoresistive force sensor is used to measure pressure and shear force. When positive pressure is applied, no torque is generated on the force sensing protrusion, and uniform pressure is applied throughout the sensing area, transmitting uniform pressure to the pressure-sensitive film. The applied pressure is calculated by averaging the resistance values ​​between any two pins (A, B, C, and D). When shear force is applied, torque is generated on the force sensing protrusion, transmitting uneven force to the pressure-sensitive film. The force on each sensing area is calculated by measuring the resistance values ​​between any two pins (A, B, C, and D) and calculating the difference. The magnitude of the shear force is then calculated using the difference and the geometric structure.

4. The super-resolution in-situ multimodal flexible sensing network as described in claim 1, characterized in that: The second and third resistors are made of materials with a resistance temperature coefficient of less than 4 × 10⁻⁶. -5 The material at / ℃, the material of the first resistor has a temperature coefficient of resistance greater than 3×10⁻⁶. -3 Materials at / ℃.

5. The super-resolution in-situ multimodal flexible sensing network as described in any one of claims 1-4, characterized in that: The sensor network is connected to a multiplexer and a double-pole double-throw mechanical switch via leads from row standard interface A, row standard interface B, row standard interface E, column standard interface C, and column standard interface D. This connection enables real-time switching between measurement units and different measurement functions in the sensor network.

6. A method for fabricating a super-resolution in-situ multimodal flexible sensing network, characterized in that: This method is used to prepare the super-resolution in-situ multimodal flexible sensor network according to any one of claims 1-5.

7. An application of the super-resolution in-situ multimodal flexible sensing network according to any one of claims 1-5 in measuring pressure, shear force, temperature, and proximity.

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