Optical Proximity Correction Method and System, Mask, Device, and Storage Medium

Abstract

An optical proximity correction method and system, mask, device and storage medium, the correction method comprising: providing a corrected pattern; detecting whether the corrected pattern has a defect; in the case where the corrected pattern has a defect, performing dynamic repair processing on the corrected pattern, the adjustment amount in the dynamic cyclic iterative repair processing being dynamically adjusted according to the defect, when the corrected pattern has one type of defect, taking the defect as the main defect, and when the corrected pattern has multiple types of defects, selecting one type of defect as the main defect, and all other types of defects that appear in the repair processing are taken as secondary defects, the repair processing comprising: adjusting the corrected pattern according to the type of defect; detecting whether the adjusted corrected pattern has a defect, and when the adjusted corrected pattern has a defect, repeating the repair processing. The present invention improves the efficiency of the repair processing.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to an optical proximity correction method and system, a mask, a device, and a storage medium. Background Art

[0002] To transfer a pattern from a mask to the surface of a silicon wafer, it is usually necessary to go through an exposure step, a development step after the exposure step, and an etching step after the development step.

[0003] However, as the size of devices shrinks day by day, after lithography, the difference between the pattern on the chip surface and the original reticle pattern also increases. To avoid the pattern on the chip being inconsistent with the mask pattern due to optical proximity effects, the current solution is usually to perform optical proximity correction (OPC) on the mask pattern, and then transfer the pattern based on the corrected mask pattern.

[0004] However, there are still some defects in the pattern after current optical proximity correction. After optical proximity correction, a repair process is still required. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide an optical proximity correction method and system, a mask, a device, and a storage medium to improve the efficiency of the repair process.

[0006] To solve the above problem, an optical proximity correction method provided by an embodiment of the present invention includes: providing a corrected pattern after optical proximity correction; detecting whether the corrected pattern has defects; when the corrected pattern has no defects, using the corrected pattern as the target pattern; when the corrected pattern has defects, performing a dynamic cyclic iterative repair process on the corrected pattern, where the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defects. When the corrected pattern has one type of defect, the defect is used as the main defect. When the corrected pattern has multiple types of defects, one type of defect is selected as the main defect, and the defect type corresponding to the main defect is fixed. The remaining types of defects that appear during the repair process are all used as secondary defects. The repair process includes: adjusting the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount; detecting whether the adjusted corrected pattern has defects, and when the adjusted corrected pattern has no defects, the repair process is completed, and the adjusted corrected pattern is used as the target pattern; when the adjusted corrected pattern has defects, repeating the repair process.

[0007] Correspondingly, an embodiment of the present invention further provides an optical proximity correction system, including: a pattern providing module for providing a corrected pattern after optical proximity correction processing; a detection module for detecting whether the corrected pattern has a defect, and when the corrected pattern has no defect, using the corrected pattern as a target pattern; a repair module for, when the corrected pattern has a defect, performing a dynamic cyclic iterative repair process on the corrected pattern, wherein an adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect. When the corrected pattern has one type of defect, the defect is used as a main defect. When the corrected pattern has multiple types of defects, one type of defect is selected as the main defect, and the defect type corresponding to the main defect is fixed, and the remaining types of defects occurring in the repair process are all used as secondary defects. The repair module includes: an adjustment unit for adjusting the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount; a detection unit for detecting whether the adjusted corrected pattern has a defect, and when the adjusted corrected pattern has no defect, the repair process is completed, and the adjusted corrected pattern is used as the target pattern; when the adjusted corrected pattern has a defect, the repair process is repeated.

[0008] Correspondingly, an embodiment of the present invention further provides a mask, including a pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

[0009] Correspondingly, an embodiment of the present invention further provides a device, including at least one memory and at least one processor, where the memory stores one or more computer instructions, and wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method provided by the embodiment of the present invention.

[0010] Correspondingly, an embodiment of the present invention further provides a storage medium, where the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

[0011] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0012] In the optical proximity correction method provided by the embodiment of the present invention, when the corrected pattern has a defect, a dynamic cyclic iterative repair process is performed on the corrected pattern, and the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect, which is beneficial to flexibly adjusting the corrected pattern according to actual needs, and is also beneficial to comprehensively considering multiple defects to obtain an adjustment amount more suitable for the current repair process, improving the accuracy and rationality of the repair process, and thus improving the efficiency of the repair process.

[0013] In an alternative solution, when the number of repair processes is multiple, the repair processes successively performed after multiple types of defects occur are dynamic repair processes, and the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process; in an embodiment of the present invention, in the repair process, different methods are used to obtain the adjustment amount for adjusting the corrected pattern in the cases of one type of defect and multiple types of defects respectively, which is beneficial to flexibly adjusting the corrected pattern according to the actual situation. Moreover, the main defect is set before the repair process and the type of the main defect is kept unchanged. When multiple types of defects occur, the adjustment amount for the main defect is dynamically increased successively in the successive repair processes. While repairing the secondary defect, the repair intensity for the main defect is increased to reduce the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defect and the defect cannot be eliminated, which is beneficial to quickly eliminating the main defect, thereby reducing the number of repair processes, improving the efficiency of the repair process, and being beneficial to comprehensively considering multiple types of defects to obtain a more suitable adjustment amount for this repair process, thereby reducing the limitation of the adjustment of the corrected pattern when multiple types of defects occur, improving the accuracy and rationality of the repair process, and at the same time reducing the number of repair processes and improving the efficiency of the repair process. Description of the Drawings

[0014] Figure 1 is a flowchart of an optical proximity correction method;

[0015] Figures 2 to 3 is a schematic diagram corresponding to an optical proximity correction method;

[0016] Figure 4 is a flowchart of an embodiment of the optical proximity correction method of the present invention;

[0017] Figures 5 to 8 is a schematic diagram corresponding to each step in an embodiment of the optical proximity correction method of the present invention;

[0018] Figure 9 is a functional block diagram of an embodiment of the optical proximity correction system of the present invention;

[0019] Figure 10 is Figure 9 a functional block diagram of an embodiment of the repair module in

[0020] Figure 11 is a hardware structure diagram of an embodiment of the device provided by the present invention. Detailed Embodiments

[0021] The efficiency of the current repair process needs to be improved. This paper analyzes the reasons why the efficiency of the repair process needs to be improved by combining an optical proximity correction method.

[0022] Figure 1 This is a flow chart of an optical proximity correction method. Figure 2 and Figure 3 , shows a schematic diagram corresponding to the optical proximity correction method, the optical proximity correction method comprising:

[0023] Step s1: providing a corrected pattern 10 after optical proximity correction processing;

[0024] Step s2: Detecting whether the corrected pattern 10 has defects;

[0025] Step s3: If the corrected pattern 10 does not have defects, use the corrected pattern 10 as a target pattern;

[0026] Step s4: If the corrected graphic 10 has defects, perform one or more iterative repair processes on the corrected graphic 10. The repair process includes:

[0027] Step s41: adjusting the corrected pattern 10 according to the type of defect, wherein the adjustment amount corresponding to each type of defect is a preset value;

[0028] Step s42: detecting whether the adjusted corrected pattern 10 has defects;

[0029] Step s5: When the adjusted corrected pattern 10 has no defects, the repair process is completed, and the adjusted corrected pattern 10 is used as the target pattern.

[0030] In the process of adjusting the corrected pattern 10 according to the type of defect, various types of defects usually appear, such as Figure 2 As shown, two types of defects are detected based on the simulated pattern 11 corresponding to the corrected pattern 10, namely: a bridging defect caused by the small spacing d between the simulated pattern 11 and the adjacent simulated pattern 11 at A, and an edge placement error defect of the simulated pattern 11 at B. When multiple types of defects appear, the adjustment amount corresponding to each type of defect is a preset value, that is, each type of defect uses a fixed adjustment amount, the repair process has great limitations, and the adjustment degree of each type of defect is similar. Therefore, during the repair process, different types of defects are easily affected by each other, resulting in the degree of different types of defects oscillating back and forth during the repair process, which makes it difficult to eliminate all types of defects. Figure 3 As shown, Figure 3It is a partial enlarged view of the bridging defect at location A. Due to the mutual influence between the bridging defect and the edge placement error defect, during the repair process, the distance d between the adjusted simulation pattern 11 corresponding to the adjusted correction pattern 10 and the adjacent simulation pattern 11 becomes smaller instead. The large adjustment oscillation during the repair process exacerbates the occurrence degree of the bridging defect at location A, making it difficult to eliminate both the bridging defect and the edge placement error defect. At the same time, due to the large adjustment oscillation during the repair process, it is also easy to cause too many repair times, greatly reducing the efficiency of the repair process.

[0031] To solve the above technical problems, an embodiment of the present invention provides an optical proximity correction method. Referring to Figure 4 , a flowchart of an embodiment of the optical proximity correction method of the present invention is shown.

[0032] In this embodiment, the optical proximity correction method includes the following basic steps:

[0033] Step S1: Provide a corrected pattern that has undergone optical proximity correction processing;

[0034] Step S2: Detect whether the corrected pattern has defects;

[0035] Step S3: In the case where the corrected pattern has no defects, use the corrected pattern as the target pattern;

[0036] Step S4: In the case where the corrected pattern has defects, perform a dynamic cyclic iterative repair process on the corrected pattern. The adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defects. Among them, when the corrected pattern has one type of defect, use the defect as the main defect. When the corrected pattern has multiple types of defects, select one type of defect as the main defect and fix the defect type corresponding to the main defect. All the remaining types of defects that appear during the repair process are used as secondary defects. The repair process includes:

[0037] Step S41: Adjust the corrected pattern according to the type of the defect. Each type of defect has a corresponding adjustment amount;

[0038] Step S42: Detect whether the adjusted corrected pattern has defects. When the adjusted corrected pattern has defects, repeat the repair process;

[0039] Step S5: When the adjusted corrected pattern has no defects, the repair process is completed, and use the adjusted corrected pattern as the target pattern.

[0040] In this embodiment, in the case that the corrected pattern has defects, a dynamic cyclic iterative repair process is performed on the corrected pattern. The adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defects, which is beneficial to flexibly adjusting the corrected pattern according to actual requirements, and is beneficial to comprehensively considering various defects to obtain an adjustment amount more suitable for this repair process, improving the accuracy and rationality of the repair process, and thus improving the efficiency of the repair process.

[0041] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description will be given to specific embodiments of the present invention with reference to the accompanying drawings.

[0042] Figures 5 to 8 It is a schematic diagram corresponding to each step in an embodiment of the optical proximity correction method of the present invention.

[0043] Refer to Figure 5 , and execute step S1: Provide a corrected pattern 100 that has undergone optical proximity correction processing.

[0044] The corrected pattern 100 is a pattern obtained after the design pattern has undergone optical proximity correction processing. The design pattern is a pattern transferred onto the wafer. After the optical proximity correction processing of the design pattern, the obtained corrected pattern 100 is used to make a mask, so as to perform a lithography process using the mask to form a corresponding mask pattern on the wafer. Among them, when the corrected pattern 100 still has defects, the corrected pattern 100 needs to be repaired, and the repaired corrected pattern 100 is used to make a mask.

[0045] In the process of performing optical proximity correction on the design pattern, in order to reduce the arbitrariness of edge movement, the edge placement error is reduced by adjusting the position of the line segment (for example, translating the line segment), so that the edge of the design pattern is divided into multiple sequentially connected line segments, and the optical proximity correction processing is performed by translating the line segment.

[0046] Therefore, in this embodiment, the edge of the corrected pattern 100 is composed of multiple line segments 100L extending along the extension direction of the edge, and adjacent line segments 100L are connected in a direction perpendicular to the line segment 100L.

[0047] In the subsequent process of repairing the corrected pattern 100, the pattern is also adjusted by translating the line segment 100L.

[0048] Continue to refer to Figure 5 , and execute step S2: Detect whether the corrected pattern 100 has defects.

[0049] Detecting whether the corrected pattern 100 has defects is used to determine whether the corrected pattern 100 needs to be repaired.

[0050] In this embodiment, the steps of detecting whether the corrected pattern 100 has a defect include: obtaining a first simulated pattern 110 corresponding to the corrected pattern 100; and detecting whether the corrected pattern 100 has a defect through the first simulated pattern 110.

[0051] The first simulated pattern 110 is a simulated exposure pattern of the designed pattern. By comparing the first simulated pattern 110 with other simulated patterns and comparing the first simulated pattern 110 with the designed pattern, it is determined whether the corrected pattern 100 has a defect.

[0052] When the corrected pattern 100 has no defect, step S3 is executed: using the corrected pattern 100 as the target pattern.

[0053] The target pattern is used to make a mask, and thus a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

[0054] When the corrected pattern 100 has a defect, step S4 is executed: performing a dynamic cyclic iterative repair process on the corrected pattern 100, and the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect.

[0055] When the corrected pattern 100 has a defect, performing a dynamic cyclic iterative repair process on the corrected pattern 100, and the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect, which is beneficial to flexibly adjusting the corrected pattern 100 according to actual requirements, and is beneficial to comprehensively considering various defects to obtain an adjustment amount more suitable for this repair process, improving the accuracy and rationality of the repair process, and thus improving the efficiency of the repair process.

[0056] Among them, in this embodiment, when the corrected pattern 100 has one type of defect, the defect is regarded as the main defect. When the corrected pattern 100 has multiple types of defects, one type of defect is selected as the main defect, and the defect type corresponding to the main defect is fixed, and the remaining types of defects that appear in the repair process are all regarded as secondary defects.

[0057] The repair process is used to eliminate the defects of the corrected pattern 100.

[0058] In this embodiment, before performing the repair process, the main defect and the secondary defect are defined, so that in the subsequent repair process, the corrected pattern 100 can be adjusted according to the main defect and the secondary defect.

[0059] In this embodiment, the types of defects include one or both of edge placement error defects and bridging defects.

[0060] Specifically, Figure 5If the distance d between the first simulated pattern 110 at A and other adjacent simulated patterns 200 is too small, the corresponding mask patterns formed by the first simulated pattern 110 and the corresponding mask patterns formed by other simulated patterns 200 on the wafer are likely to come into contact, resulting in a bridging defect at A in the corrected pattern 100.

[0061] As an example, in this embodiment, the corrected pattern 100 has a type of defect, which is a bridging defect, and the bridging defect is the main defect.

[0062] Compared with the defects that appear during the subsequent repair process, the defects detected for the first time before the repair process usually require a greater degree of adjustment. Therefore, defining the main defect before the repair process enables targeted and rapid elimination of the relatively major defects for the corrected pattern 100, and not changing the type of the main defect subsequently helps avoid the adjustment turmoil caused by the replacement of the main defect type. This is conducive to implementing an appropriate adjustment method for the corrected pattern 100 according to the actual situation, improving the accuracy and rationality of the repair process.

[0063] In other embodiments, when the corrected pattern has multiple types of defects, one type of defect is selected as the main defect, and the remaining types of defects that appear during the repair process are used as secondary defects.

[0064] Correspondingly, in this embodiment, before subsequently adjusting the corrected pattern 100 according to the type of the defect, it further includes: determining the position corresponding to the defect on the corrected pattern 100 as the repair position.

[0065] The repair position is the position where the corrected pattern 100 needs to be adjusted subsequently. As an example, as Figure 5 shown, A is the repair position.

[0066] With reference to Figure 6 and Figure 7 , the repair process includes performing step S41: adjusting the corrected pattern 100 according to the type of the defect. Each type of defect has a corresponding adjustment amount. Among them, when the number of repair processes is multiple, the successive repair processes after multiple types of defects appear are regarded as dynamic repair processes. The adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process.

[0067] Among them, Figure 6 the dashed line in Figure 6 is the corrected pattern and the second simulated pattern in the previous repair process,

[0068] In this embodiment, during the repair process, different methods are used to obtain the adjustment amount of the adjusted and corrected pattern 100 for the cases of one type of defect and multiple types of defects respectively, which is beneficial to flexibly adjust the corrected pattern 100 according to the actual situation. Moreover, before the repair process, the main defect is set and the type of the main defect is kept unchanged. When multiple types of defects occur, the adjustment amount for the main defect is dynamically increased in the successive repair processes. While repairing the secondary defects, the repair intensity for the main defect is increased to reduce the probability that the adjustment of the corrected pattern 100 fluctuates greatly due to the mutual influence between the main defect and the secondary defects and the defects cannot be eliminated, which is beneficial to quickly eliminate the main defect, thereby reducing the number of repair processes, improving the efficiency of the repair process, and being conducive to comprehensively considering multiple types of defects to obtain an adjustment amount more suitable for this repair process, thus reducing the limitation of the adjustment of the corrected pattern 100 when multiple types of defects occur, improving the accuracy and rationality of the repair process, and at the same time reducing the number of repair processes and improving the efficiency of the repair process.

[0069] It should be noted that the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process, where the previous repair process refers to the repair process before the dynamic repair process.

[0070] In this embodiment, when there is one type of defect and the defect is the main defect, the adjustment amount corresponding to the main defect is the first preset value. That is to say, when there is one type of defect and the defect is the main defect, a fixed adjustment amount is used to repair the corrected pattern 100, which can reduce the diversity of the repair process while ensuring the repair effect of the corrected pattern 100, so that when there is one type of defect, the algorithm of the repair process is relatively simple.

[0071] In this embodiment, the adjustment amount corresponding to the secondary defect is the second preset value. That is to say, a fixed adjustment amount is used to repair the secondary defects of the corrected pattern 100, which can reduce the diversity of the repair process while ensuring the repair effect of multiple types of defects of the corrected pattern 100, so that when multiple types of defects occur, the algorithm of the repair process will not be too complicated.

[0072] It should be noted that the first preset value should not be too large or too small. If the first preset value is too large, the step size of the repair process loop iteration will be too large, and the adjustment amount for the corrected pattern 100 each time will be too large, which easily leads to the corrected pattern 100 after adjustment deviating too much from the better correction result. It is also easy to oscillate back and forth near the better correction result during the adjustment process and it is difficult to eliminate the defect. Moreover, because the adjustment amount is too large, other types of defects are likely to be generated, thus increasing the difficulty and number of repair processes, and further affecting the efficiency of the repair process. If the first preset value is too small, the step size of the loop iteration of the repair process will be too small, and the adjustment amount for the corrected pattern 100 each time will be too small, which easily leads to too many loop iteration times, increasing the repair time and adding unnecessary time and computing costs. Therefore, in this embodiment, the first preset value is from 0.1 nm to 0.2 nm.

[0073] It also should be noted that the second preset value should not be too large or too small. If the second preset value is too large, the step size of the loop iteration for the secondary defect repair process will be too large, and the adjustment amount for the secondary defect of the corrected pattern 100 each time will be too large, which easily leads to the corrected pattern 100 after adjustment deviating too much from the better correction result at the secondary defect position. It is also easy to oscillate back and forth near the better correction result during the adjustment process and it is difficult to eliminate the secondary defect. Moreover, the primary defect needs to be repaired, and the adjustment amount of the secondary defect is too large, which is also likely to be too close to the adjustment amount of the primary defect, increasing the probability that the adjustment of the corrected pattern 100 will be too turbulent due to the mutual influence between the primary defect and the secondary defect and the defect cannot be eliminated. At the same time, because the adjustment amount is too large, other types of defects are likely to be generated, thus increasing the difficulty and number of repair processes, and further affecting the efficiency of the repair process. If the second preset value is too small, the step size of the loop iteration for the secondary defect repair process will be too small, and the adjustment amount for the secondary defect of the corrected pattern 100 each time will be too small, which easily leads to too many loop iteration times, increasing the repair time and adding unnecessary time and computing costs. Therefore, in this embodiment, the second preset value is from 0.1 nm to 0.2 nm.

[0074] In order to further reduce the diversity of the repair process and simplify the repair algorithm, in this embodiment, the first preset value is equal to the second preset value, which is beneficial to avoiding the repair process from being too complicated.

[0075] It should be noted that in this embodiment, in the first repair process, the adjustment amount corresponding to the primary defect is the first preset value, and the first preset value is from 0.1 nm to 0.2 nm.

[0076] In this embodiment, the difference between the adjustment amount corresponding to the main defect in the dynamic repair process and the adjustment amount corresponding to the main defect in the previous repair process is a third preset value. The third preset value should not be too large or too small. If the third preset value is too large, the step size jump of the iterative loop for repairing the main defect is too large, and the adjustment amounts of the main defect in two adjacent repair processes differ greatly. This easily causes the corrected pattern 100 after adjustment to oscillate back and forth near a better correction result at the position of the main defect, making it difficult to eliminate the main defect. After multiple repair processes, the adjustment amount of the main defect is too large, making it even more difficult to eliminate the main defect. At the same time, because the adjustment amount is too large, other types of defects are likely to be generated, increasing the difficulty and number of repair processes, and thus affecting the efficiency of the repair process. If the third preset value is too small, the step size jump of the iterative loop for repairing the main defect is too small, and the adjustment amounts of the main defect in two adjacent repair processes differ too little. That is to say, the adjustment amount for dynamically increasing the repair process for the main defect is too small, and it is still difficult to quickly eliminate the main defect. Therefore, it is difficult to reduce the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defect, making it impossible to eliminate the defect, and thus difficult to reduce the number of repair processes and improve the efficiency of the repair process. For this reason, in this embodiment, the third preset value is 0.1 nm to 0.2 nm.

[0077] As an example, in this embodiment, as Figure 5 shown, the bridging defect is the main defect. In the iterative repair process, as Figure 6 shown, Figure 6 a problem of large Edge Placement Error (EPE) occurs at B in

[0078] . As a result, the corrected pattern 100 has an edge placement error defect at B, and the edge placement error defect is the secondary defect.

[0079] Specifically, in this embodiment, in the step of adjusting the corrected pattern 100 according to the type of defect, the corrected pattern 100 is adjusted by adjusting the contour of the corrected pattern 100 at the repair position.

[0080] In this embodiment, the corrected pattern 100 is detected for defects by detecting the first simulated pattern 110. Therefore, it is necessary to adjust the contour of the first simulated pattern 110 to eliminate the defects. During the process of adjusting the corrected pattern 100, the corresponding second simulated pattern 120 corresponding to the adjusted corrected pattern 100 is also obtained. Therefore, by adjusting the contour of the corrected pattern 100 at the repair position, the contour of the first simulated pattern 110 can be correspondingly adjusted to eliminate the defects.

[0081] Specifically, taking the repair position A as an example, refer to Figure 7 , Figure 7 which Figure 6 is a partial enlarged view of the position A in . The steps of adjusting the contour of the corrected pattern 100 at the repair position include: at the repair position, translating the line segment 100L in a direction perpendicular to the line segment 100L to adjust the contour of the corrected pattern 100, where the distance s of translating the line segment 100L is the adjustment amount.

[0082] Among them, Figure 7 the dashed line in is the corrected pattern and the second simulated pattern in the previous repair process, Figure 7 and the solid line in is the corrected pattern and the second simulated pattern in the subsequent repair process.

[0083] During the repair process, in order to reduce the arbitrariness of the edge movement of the corrected pattern 100, the contour of the corrected pattern 100 is adjusted by translating the line segment 100L.

[0084] Continue to refer to Figure 6 , and execute step S42: Detect whether the adjusted corrected pattern 100 has defects. When the adjusted corrected pattern 100 has defects, repeat the repair process.

[0085] Detecting whether the adjusted corrected pattern 100 has defects is used to determine whether the adjusted corrected pattern 100 still needs to be repaired.

[0086] In this embodiment, the steps of detecting whether the adjusted corrected pattern 100 has defects include: obtaining the second simulated pattern 120 corresponding to the adjusted corrected pattern 100; detecting whether the adjusted corrected pattern 100 has defects through the second simulated pattern 120.

[0087] The second simulated pattern 120 is a simulated exposure pattern of the designed pattern. By comparing the second simulated pattern 120 with other simulated patterns and comparing the second simulated pattern 120 with the designed pattern, it is determined whether the adjusted corrected pattern 100 has defects.

[0088] In the case where the adjusted and corrected pattern 100 has a defect, return to execute step S41.

[0089] In the case where the adjusted and corrected pattern 100 has no defect, refer to Figure 8 , execute step S5: The repair process is completed, and the adjusted and corrected pattern 100 is used as the target pattern 210.

[0090] The target pattern 210 is used to fabricate a mask, and thus a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

[0091] Correspondingly, the adjusted second simulation pattern 120 is used as the target simulation pattern 220.

[0092] Correspondingly, the present invention also provides an optical proximity correction system. Figure 9 is a functional block diagram of an embodiment of the optical proximity correction system of the present invention; Figure 10 is Figure 9 a functional block diagram of an embodiment of the repair module in

[0093] In this embodiment, the optical proximity correction system 50 includes: a pattern providing module 501 for providing a corrected pattern that has undergone optical proximity correction processing; a detection module 502 for detecting whether the corrected pattern has a defect, and in the case where the corrected pattern has no defect, using the corrected pattern as the target pattern; a repair module 503 for performing a dynamic cyclic iterative repair process on the corrected pattern in the case where the corrected pattern has a defect, and the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect. Wherein, when the corrected pattern has one type of defect, the defect is used as the main defect, and when the corrected pattern has multiple types of defects, one type of defect is selected as the main defect and the defect type corresponding to the main defect is fixed, and the remaining types of defects that appear in the repair process are all used as secondary defects; the repair module 503 includes: an adjustment unit 5031 for adjusting the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount; a detection unit 5032 for detecting whether the adjusted corrected pattern has a defect, and when the adjusted corrected pattern has no defect, the repair process is completed and the adjusted corrected pattern is used as the target pattern, and when the adjusted corrected pattern has a defect, the repair process is repeated.

[0094] The pattern providing module 501 is used to provide a corrected pattern that has undergone optical proximity correction processing.

[0095] The corrected pattern is the pattern obtained after the design pattern has been subjected to optical proximity correction processing. The design pattern is the pattern transferred onto the wafer. After the design pattern has been subjected to optical proximity correction processing, the obtained corrected pattern is used to fabricate a mask plate, thereby using the mask plate for a lithography process to form a corresponding mask pattern on the wafer. Among them, when there are still defects in the corrected pattern, the corrected pattern still needs to be repaired, and the repaired corrected pattern is used to fabricate a mask plate.

[0096] During the process of performing optical proximity correction on the design pattern, in order to reduce the arbitrariness of edge movement, the edge placement error is reduced by adjusting the position of line segments (for example, translating line segments), thereby dividing the edge of the design pattern into multiple successively connected line segments, and performing optical proximity correction processing by translating the line segments.

[0097] Therefore, in this embodiment, the edge of the corrected pattern is composed of multiple line segments extending along the extension direction of the edge, and adjacent line segments are connected in a direction perpendicular to the line segments.

[0098] During the subsequent process of repairing the corrected pattern, the pattern is also adjusted by translating line segments.

[0099] The detection module 502 is used to detect whether the corrected pattern has defects, and in the case where the corrected pattern has no defects, the corrected pattern is used as the target pattern.

[0100] Detecting whether the corrected pattern has defects is used to determine whether the corrected pattern needs to be repaired.

[0101] In this embodiment, a first simulation pattern corresponding to the corrected pattern is obtained; through the first simulation pattern, it is detected whether the corrected pattern has defects.

[0102] The first simulation pattern is the simulated exposure pattern of the design pattern. By comparing the first simulation pattern with other simulation patterns and comparing the first simulation pattern with the design pattern, it is determined whether the corrected pattern has defects.

[0103] In the case where the corrected pattern has no defects, the corrected pattern is used as the target pattern.

[0104] The target pattern is used to fabricate a mask plate, thereby using the mask plate for a lithography process to form a corresponding mask pattern on the wafer.

[0105] The repair module 503 is used to perform dynamic cyclic iterative repair processing on the corrected graph when the corrected graph has defects. When the corrected graph has one type of defect, the defect is regarded as the main defect. When the corrected graph has multiple types of defects, one type of defect is selected as the main defect, and the defect type corresponding to the main defect is fixed. The remaining types of defects that appear during the repair processing are all regarded as secondary defects.

[0106] When the corrected graph has defects, dynamic cyclic iterative repair processing is performed on the corrected graph. The adjustment amount in the dynamic cyclic iterative repair processing is dynamically adjusted according to the defects, which is beneficial to flexibly adjusting the corrected graph according to actual needs, and is beneficial to comprehensively considering multiple defects to obtain an adjustment amount more suitable for this repair processing, improving the accuracy and rationality of the repair processing, and thus improving the efficiency of the repair processing.

[0107] The repair processing is used to eliminate the defects of the corrected graph.

[0108] In this embodiment, before performing the repair processing, the main defect and the secondary defect are defined, so that during the subsequent repair processing, the corresponding adjustment method of the corrected graph can be performed according to the main defect and the secondary defect.

[0109] In this embodiment, the types of defects include one or both of the edge placement error defect and the bridging defect.

[0110] Specifically, if the distance between the first simulation graph and other adjacent simulation graphs is too small, the corresponding mask graphs formed by the first simulation graph and the corresponding mask graphs formed by other simulation graphs on the wafer are likely to come into contact, so that the corrected graph has a bridging defect.

[0111] As an example, in this embodiment, the corrected graph has one defect, which is a bridging defect, and the bridging defect is the main defect.

[0112] Compared with the defects that appear during the subsequent repair process, the degree of adjustment required for the defects detected for the first time before the repair processing is usually greater. Therefore, defining the main defect before the repair processing can enable targeted and rapid elimination of the relatively main defects for the corrected graph, and the type of the main defect is not changed subsequently, which is beneficial to avoiding the situation of adjustment turmoil caused by the replacement of the main defect type, and thus is beneficial to implementing an appropriate method for adjusting the corrected graph according to the actual situation, improving the accuracy and rationality of the repair processing.

[0113] In other embodiments, when the corrected graph has multiple types of defects, one type of defect is selected as the main defect, and the remaining types of defects that appear during the repair processing are regarded as secondary defects.

[0114] Correspondingly, in this embodiment, before adjusting the corrected pattern according to the type of the defect subsequently, it further includes: determining the position corresponding to the defect on the corrected pattern as the repair position.

[0115] The repair position is the position where the corrected pattern needs to be adjusted subsequently.

[0116] The repair module 503 includes: an adjustment unit 5031, configured to adjust the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount.

[0117] Wherein, in this embodiment, when the number of repair processes is multiple, the repair processes successively performed after various types of defects appear are regarded as dynamic repair processes, and the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process.

[0118] In this embodiment, in the repair process, different methods are respectively adopted for the situations of one type of defect and multiple types of defects to obtain the adjustment amount for adjusting the corrected pattern, which is beneficial to flexibly adjusting the corrected pattern according to the actual situation. Moreover, the main defect is set before the repair process and the type of the main defect is kept unchanged. When multiple types of defects appear, the adjustment amount for the main defect is dynamically increased successively in the subsequent repair processes. While repairing the secondary defects, the repair intensity for the main defect is increased to reduce the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defects and the defects cannot be eliminated, which is beneficial to quickly eliminating the main defect, thereby reducing the number of repair processes, improving the efficiency of the repair process, and comprehensively considering multiple types of defects to obtain a more suitable adjustment amount for this repair process, thereby reducing the limitation of the adjustment of the corrected pattern when multiple types of defects appear, improving the accuracy and rationality of the repair process, and at the same time reducing the number of repair processes and improving the efficiency of the repair process.

[0119] It should be noted that the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process, where the previous repair process refers to: the repair process before the dynamic repair process.

[0120] In this embodiment, when one type of defect appears and the defect is the main defect, the adjustment amount corresponding to the main defect is the first preset value. That is to say, when one type of defect appears and the defect is the main defect, a fixed adjustment amount is used to repair the corrected pattern, which can reduce the diversity of the repair process while ensuring the repair effect on the corrected pattern, so that the repair algorithm is relatively simple when one type of defect appears.

[0121] In this embodiment, the adjustment amount corresponding to the secondary defect is the second preset value. That is to say, by maintaining a fixed adjustment amount to repair the secondary defect of the corrected pattern, it is possible to ensure the repair effect of various types of defects of the corrected pattern while reducing the diversity of the repair process, so that when various types of defects occur, the repair algorithm will not be too complicated.

[0122] It should be noted that the first preset value should not be too large or too small. If the first preset value is too large, the step size of the repair process loop iteration is too large, and the adjustment amount for the corrected pattern each time is too large, which easily causes the adjusted corrected pattern to deviate too much from the better corrected result. It is also easy to oscillate back and forth near the better corrected result during the adjustment process and it is difficult to eliminate the defect. And because the adjustment amount is too large, it is also easy to generate other types of defects, thus increasing the difficulty and number of repair processes, and further affecting the efficiency of the repair process. If the first preset value is too small, the step size of the loop iteration of the repair process is too small, and the adjustment amount for the corrected pattern each time is too small, which easily leads to too many loop iteration times, increasing the repair time and adding unnecessary time and computing costs. Therefore, in this embodiment, the first preset value is 0.1 nm to 0.2 nm.

[0123] It should also be noted that the second preset value should not be too large or too small. If the second preset value is too large, the step size of the loop iteration for repairing the secondary defect is too large, and the adjustment amount for the secondary defect of the corrected pattern each time is too large, which easily causes the adjusted corrected pattern to deviate too much from the better corrected result at the position of the secondary defect. It is also easy to oscillate back and forth near the better corrected result during the adjustment process and it is difficult to eliminate the secondary defect. And since the main defect also needs to be repaired, if the adjustment amount of the secondary defect is too large, it is also easy to be too close to the adjustment amount of the main defect, which easily increases the probability that due to the mutual influence between the main defect and the secondary defect, the adjustment of the corrected pattern fluctuates greatly and the defect cannot be eliminated. At the same time, because the adjustment amount is too large, it is also easy to generate other types of defects, thus increasing the difficulty and number of repair processes, and further affecting the efficiency of the repair process. If the second preset value is too small, the step size of the loop iteration for repairing the secondary defect is too small, and the adjustment amount for the secondary defect of the corrected pattern each time is too small, which easily leads to too many loop iteration times, increasing the repair time and adding unnecessary time and computing costs. Therefore, in this embodiment, the second preset value is 0.1 nm to 0.2 nm.

[0124] In order to further reduce the diversity of the repair process and simplify the repair algorithm, in this embodiment, the first preset value is equal to the second preset value, which is beneficial to avoiding the repair process from being too complicated.

[0125] It should be noted that in this embodiment, in the first repair process, the adjustment amount corresponding to the main defect is the first preset value, and the first preset value is 0.1 nm to 0.2 nm.

[0126] In this embodiment, the difference between the adjustment amount corresponding to the main defect in the dynamic repair process and the adjustment amount corresponding to the main defect in the previous repair process is the third preset value. The third preset value should not be too large or too small. If the third preset value is too large, the step jump of the loop iteration for the repair process of the main defect is too large, and the adjustment amounts of the main defect in two adjacent repair processes differ too much, which easily causes the corrected pattern after adjustment to oscillate back and forth near a better correction result at the position of the main defect and it is difficult to eliminate the main defect. Moreover, after multiple repair processes, the adjustment amount of the main defect is too large, making it even more difficult to eliminate the main defect. At the same time, because the adjustment amount is too large, other types of defects are likely to be generated, thus increasing the difficulty and number of repair processes and further affecting the efficiency of the repair process. If the third preset value is too small, the step jump of the loop iteration for the repair process of the main defect is too small, and the adjustment amounts of the main defect in two adjacent repair processes differ too little. That is to say, the adjustment amount for the dynamic increase in the repair process of the main defect is too small, and it is still difficult to quickly eliminate the main defect, so it is difficult to reduce the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defect and the defects cannot be eliminated, and it is thus difficult to reduce the number of repair processes and improve the efficiency of the repair process. Therefore, in this embodiment, the third preset value is 0.1 nm to 0.2 nm.

[0127] As an example, in this embodiment, the bridging defect is the main defect. In the loop iteration repair process, a problem of large edge placement error occurs, and thus the corrected pattern has an edge placement error defect, then the edge placement error defect is the secondary defect.

[0128] Correspondingly, as an example, when multiple defects occur, the bridging defect is the main defect. For the adjustment amount of the bridging defect, the adjustment amount corresponding to the bridging defect in each dynamic repair process is greater than the adjustment amount corresponding to the bridging defect in the previous repair process. That is to say, in the first dynamic repair, the adjustment amount for the bridging defect is the first preset value + the third preset value. In the subsequent dynamic repair, the adjustment amount for the bridging defect is the first preset value + 2×the third preset value, …, and so on, increasing dynamically. In the dynamic repair, the adjustment amount of the bridging defect always increases arithmetically. The edge placement error defect is the secondary defect, and the adjustment amount for the edge placement error defect is always the second preset value.

[0129] Specifically, in this embodiment, the corrected pattern is adjusted by adjusting the contour of the corrected pattern at the repair position.

[0130] In this embodiment, the corrected pattern is detected for defects by detecting the first simulated pattern. Therefore, it is necessary to adjust the contour of the first simulated pattern to eliminate the defects. During the process of adjusting the corrected pattern, the corresponding second simulated pattern corresponding to the adjusted corrected pattern is also obtained. Therefore, by adjusting the contour of the corrected pattern at the repair position, the contour of the first simulated pattern can be adjusted accordingly to eliminate the defects.

[0131] Specifically, at the repair position, the line segment is translated in a direction perpendicular to the line segment to adjust the contour of the corrected pattern, where the translation distance of the line segment is the adjustment amount.

[0132] During the repair process, in order to reduce the arbitrariness of the movement of the edge of the corrected pattern, the contour of the corrected pattern is adjusted by translating the line segment.

[0133] The repair module 503 further includes: a detection unit 5032, configured to detect whether the adjusted corrected pattern has defects, and when the adjusted corrected pattern has no defects, the repair process is completed, and the adjusted corrected pattern is used as the target pattern. When the adjusted corrected pattern has defects, the repair process is repeated.

[0134] Detecting whether the adjusted corrected pattern has defects is used to determine whether the adjusted corrected pattern still needs to be repaired.

[0135] In this embodiment, the corresponding second simulated pattern of the adjusted corrected pattern is obtained; through the second simulated pattern, it is detected whether the adjusted corrected pattern has defects.

[0136] The second simulated pattern is the simulated exposure pattern of the design pattern. By comparing the second simulated pattern with other simulated patterns and comparing the second simulated pattern with the design pattern, it is determined whether the adjusted corrected pattern has defects.

[0137] When the adjusted corrected pattern has defects, return to the adjustment unit 5031.

[0138] When the adjusted corrected pattern has no defects, the repair process is completed, and the adjusted corrected pattern is used as the target pattern.

[0139] The target pattern is used to fabricate a mask, so as to perform a lithography process using the mask to form a corresponding mask pattern on the wafer.

[0140] Correspondingly, the present invention also provides a mask, including: a pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

[0141] As can be seen from the foregoing embodiments, in the repair process, different methods are used to obtain the adjustment amount for adjusting the corrected pattern in the cases of one type of defect and multiple types of defects, which is beneficial to flexibly adjust the corrected pattern according to the actual situation. Moreover, the main defect is set before the repair process and the type of the main defect is kept unchanged. When multiple types of defects occur, the adjustment amount for each repair process is dynamically increased for the main defect, which is beneficial to quickly eliminate the main defect and reduce the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defect, resulting in the inability to eliminate the defect. Therefore, it is beneficial to reduce the number of repair processes, improve the efficiency of the repair process, and is conducive to comprehensively considering multiple types of defects to obtain an adjustment amount more suitable for the current repair process, thereby reducing the limitation of the adjustment of the corrected pattern when multiple types of defects occur, improving the accuracy and rationality of the repair process, and at the same time being beneficial to reducing the number of repair processes and improving the efficiency of the repair process. Correspondingly, after forming a mask pattern on the wafer using a mask, the matching degree between the mask pattern formed on the wafer and the target pattern is improved.

[0142] An embodiment of the present invention further provides a device, which can implement the optical proximity correction method provided by the embodiment of the present invention by loading the above optical proximity correction method in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as Figure 11 shown, including: at least one processor 01, at least one communication interface 02, at least one memory 03, and at least one communication bus 04.

[0143] In this embodiment, the number of the processor 01, the communication interface 02, the memory 03, and the communication bus 04 is at least one, and the processor 01, the communication interface 02, and the memory 03 complete communication with each other through the communication bus 04. The communication interface 02 can be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit CPU, or a specific integrated circuit (Application Specific Integrated Circuit, ASIC), or one or more integrated circuits configured to implement the embodiment of the present invention. The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory, NVM), such as at least one disk memory. Among them, the memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the optical proximity correction method provided by the embodiment of the present invention.

[0144] It should be noted that the above-mentioned implementation terminal device may further include other devices (not shown) that may not be essential to the disclosed content of the embodiments of the present invention; since these other devices may not be essential for understanding the disclosed content of the embodiments of the present invention, the embodiments of the present invention do not introduce them one by one.

[0145] Embodiments of the present invention further provide a storage medium, which stores one or more computer instructions for implementing the optical proximity correction method provided by the embodiments of the present invention.

[0146] In the optical proximity correction method provided by the embodiments of the present invention, when the corrected pattern has a type of defect, the defect is regarded as the main defect; when the corrected pattern has multiple types of defects, one type of defect is selected as the main defect, and the remaining types of defects that appear during the repair process are regarded as secondary defects. When the number of repair processes is multiple, the repair process with multiple types of defects is regarded as the dynamic repair process, and the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process. In the embodiments of the present invention, in the repair process, different methods are used to obtain the adjustment amount for adjusting the corrected pattern in the cases of one type of defect and multiple types of defects, which is beneficial to flexibly adjusting the corrected pattern according to the actual situation. Moreover, the main defect is set before the repair process and the type of the main defect is kept unchanged. When multiple types of defects appear, the adjustment amount of each repair process is dynamically increased for the main defect, which is beneficial to quickly eliminating the main defect and reducing the probability that the adjustment of the corrected pattern fluctuates greatly due to the mutual influence between the main defect and the secondary defects and the defects cannot be eliminated, thus reducing the number of repair processes, improving the efficiency of the repair process, and being beneficial to comprehensively considering multiple types of defects to obtain a more suitable adjustment amount for this repair process, thereby reducing the limitation of the adjustment of the corrected pattern when multiple types of defects appear, improving the accuracy and rationality of the repair process, and at the same time reducing the number of repair processes and improving the efficiency of the repair process.

[0147] The above embodiments of the present invention are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features can be regarded as selective. Each element or feature can be practiced without being combined with other elements or features. In addition, the embodiments of the present invention can be constructed by combining some elements and / or features. The operation sequence described in the embodiments of the present invention can be rearranged. Some configurations of any embodiment can be included in another embodiment and can be replaced by the corresponding configuration of another embodiment. It is obvious to those skilled in the art that the claims that do not have an explicit citation relationship with each other in the appended claims can be combined into the embodiments of the present invention or can be included as new claims in the amendments after the submission of this application.

[0148] Embodiments of the present invention can be implemented by various means such as, for example, hardware, firmware, software, or combinations thereof. In a hardware configuration, the method according to an exemplary embodiment of the present invention can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, and the like. In a firmware or software configuration, embodiments of the present invention can be implemented in the form of modules, procedures, functions, and the like. The software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0149] The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Thus, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0150] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope defined in the claims.

Claims

1. An optical proximity correction method, characterized in that, Including: Providing a corrected pattern after optical proximity correction processing; Detecting whether the corrected pattern has a defect; When the corrected pattern has no defect, using the corrected pattern as the target pattern; When the corrected pattern has a defect, performing a dynamic cyclic iterative repair process on the corrected pattern, wherein the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect. When the corrected pattern has one type of defect, using the defect as the main defect. When the corrected pattern has multiple types of defects, selecting one type of defect as the main defect and fixing the defect type corresponding to the main defect, and regarding the remaining types of defects that appear in the repair process as secondary defects. The repair process includes: Adjusting the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount; Detecting whether the adjusted corrected pattern has a defect. When the adjusted corrected pattern has no defect, the repair process is completed, and using the adjusted corrected pattern as the target pattern. When the adjusted corrected pattern has a defect, repeating the repair process; Wherein, when the number of times of the repair process is multiple, regarding the repair processes successively performed after multiple types of defects appear as the dynamic repair process, and the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process.

2. The optical proximity correction method according to claim 1, characterized in that The step of detecting whether the corrected pattern has a defect includes: obtaining a first simulated pattern corresponding to the corrected pattern; detecting whether the corrected pattern has a defect through the first simulated pattern; The step of detecting whether the adjusted corrected pattern has a defect includes: obtaining a second simulated pattern corresponding to the adjusted corrected pattern; detecting whether the adjusted corrected pattern has a defect through the second simulated pattern.

3. The optical proximity correction method according to claim 1, wherein In the first repair process, the adjustment amount corresponding to the main defect is a first preset value, and the first preset value is from 0.1 nm to 0.2 nm; When the number of times of the repair process is multiple, in the step of adjusting the corrected pattern according to the type of the defect, when one type of defect appears and the defect is the main defect, the adjustment amount corresponding to the main defect is a first preset value, and the first preset value is from 0.1 nm to 0.2 nm.

4. The optical proximity correction method according to claim 1, characterized in that In the step of adjusting the corrected pattern according to the type of the defect, the adjustment amount corresponding to the secondary defect is a second preset value, and the second preset value is from 0.1 nm to 0.2 nm.

5. The optical proximity correction method according to claim 1, wherein The difference between the adjustment amount corresponding to the main defect in the dynamic repair process and the adjustment amount corresponding to the main defect in the previous repair process is a third preset value, and the third preset value is from 0.1 nm to 0.2 nm.

6. The optical proximity correction method according to claim 1, characterized in that The repair process further includes: before adjusting the corrected pattern according to the type of the defect, determining the position corresponding to the defect on the corrected pattern as the repair position; In the step of adjusting the corrected pattern according to the type of the defect, the corrected pattern is adjusted by adjusting the contour of the corrected pattern at the repair position.

7. The optical proximity correction method according to claim 6, characterized in that, In the step of providing a corrected pattern that has been subjected to optical proximity correction processing, the sides of the corrected pattern are composed of a plurality of line segments extending along the extending direction of the side. The step of adjusting the contour of the corrected pattern at the repair position includes: at the repair position, translating the line segment in a direction perpendicular to the line segment to adjust the contour of the corrected pattern, where the distance of translating the line segment is the adjustment amount.

8. The optical proximity correction method according to claim 1, characterized in that In the step of performing one or more cyclic iterative repair processes on the corrected pattern when the corrected pattern has a defect, the type of the defect includes one or both of an edge placement error defect and a bridging defect.

9. An optical proximity correction system, characterized in that, Including: A pattern providing module for providing a corrected pattern that has been subjected to optical proximity correction processing. A detection module for detecting whether the corrected pattern has a defect, and when the corrected pattern does not have a defect, using the corrected pattern as a target pattern. A repair module for performing a dynamic cyclic iterative repair process on the corrected pattern when the corrected pattern has a defect, where the adjustment amount in the dynamic cyclic iterative repair process is dynamically adjusted according to the defect. Among them, when the corrected pattern has one type of defect, the defect is used as the main defect. When the corrected pattern has multiple types of defects, one type of defect is selected as the main defect, and the defect type corresponding to the main defect is fixed. The remaining types of defects that appear during the repair process are all used as secondary defects. The repair module includes: An adjustment unit for adjusting the corrected pattern according to the type of the defect, and each type of defect has a corresponding adjustment amount. A detection unit for detecting whether the adjusted corrected pattern has a defect, and when the adjusted corrected pattern does not have a defect, the repair process is completed, and the adjusted corrected pattern is used as the target pattern. When the adjusted corrected pattern has a defect, the repair process is repeated. Among them, when the number of times of the repair process is multiple, the repair processes successively performed after multiple types of defects appear are used as dynamic repair processes, and the adjustment amount corresponding to the main defect in each dynamic repair process is greater than the adjustment amount corresponding to the main defect in the previous repair process.

10. A photomask, characterized in that, Including: A pattern obtained by using the optical proximity correction method according to any one of claims 1-8.

11. A device, characterized in that, Including at least one memory and at least one processor, where the memory stores one or more computer instructions, and among them, the one or more computer instructions are executed by the processor to implement the optical proximity correction method according to any one of claims 1-8.

12. A storage medium, characterized in that, The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method according to any one of claims 1-8.

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