A low-power-consumption high-sensitivity microstructure gas sensor system and a manufacturing method thereof

Abstract

The present application relates to a low-power-consumption high-sensitivity microstructure gas sensor system and a manufacturing method, the sensor system comprising a substrate for depositing a sensitive material, a detection electrode for detecting electrical changes and an insulating layer for providing support, the sensitive material being deposited to the substrate to define at least two deposition areas on the substrate, wherein the part deposited to the detection electrode and the insulating layer forms a sacrifice area to reduce interference in multi-component gas detection, the sacrifice area and the detection area being selectively adsorbed to their corresponding gas based on the difference of different adsorption capacity parameters including at least temperature and reaction site number; the manufacturing method of the system comprises the following steps: forming a substrate, the substrate being configured with a detection electrode for detection, a substrate for depositing a sensitive material and an insulating layer for support, forming a sensing layer on the substrate, the sensitive material being deposited to the substrate to define at least two deposition areas on the substrate during the process of forming the sensing layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of gas sensor, in particular to a microstructure gas sensor system and a manufacturing method. BACKGROUND

[0002] The main principle of semiconductor sensor is to use a suitable semiconductor material as a gas sensitive material to generate a sensing response by causing a change in the electrical conductivity of the gas sensitive material through an adsorption reaction with the gas to be measured at a certain working temperature. Among them, inorganic semiconductor nanomaterials are very beneficial to the adsorption and desorption of gases due to their large number of crystal grains, grain boundaries and pores and large specific surface area. In particular, carbon nanotubes have one-dimensional nanometer size, large specific surface area and hollow structure, and show high sensitivity and fast response-recovery time, and are more sensitive to combustible gases and toxic gases, and have become one of the most widely used gas sensors. There are two types of commonly used semiconductor gas sensors: resistance type and non-resistance type gas sensors. The resistance type semiconductor gas sensor is mainly an impedance device made of a semiconductor metal oxide film as a sensitive material. Generally, n-type metal oxide semiconductor materials are used. Under certain conditions, the molecules of the gas to be measured will undergo an adsorption reaction on the surface of the gas sensitive material, causing a change in the carrier, and changing the electrical conductivity of the material.

[0003] The selectivity of a gas sensor refers to the ability of the sensor to identify the measured gas and suppress the interference gas, also known as cross-sensitivity, and is usually represented by S (Selectivity). In mixed gas detection, the selectivity of the gas sensor is very important. Poor selectivity will affect the qualitative identification of the measured gas and further limit quantitative analysis. Common methods to improve sensor selectivity include: selecting appropriate catalysts to maximize the sensitivity of the sensor to specific gases; selecting the optimal working temperature of the sensor to achieve the best response of specific gases due to the different activation energies required for the chemical adsorption of different gases.

[0004] A kind of nanometer cantilever array and its preparation method, resonant array gas sensor as disclosed in the prior art document with publication number CN111948281A, the nanometer cantilever array includes substrate and cantilever array, each cantilever of cantilever array includes: support layer, is arranged on substrate, and the end in contact with substrate forms U-shaped cantilever support arm, the end of support layer far from U-shaped cantilever support arm is suspended on substrate;Metal conductive layer, arranged on support layer;And sensitive layer, is arranged on the metal conductive layer far from U-shaped cantilever support arm side, and it is equipped with sensitive unit on it. The present application adopts the cantilever structure of double-arm support, which can effectively improve the sensitivity of the sensor;The cantilever array with double-arm support structure has multiple sensitive units, which can quickly and sensitively respond to multiple chemical gases.

[0005] A gradient stack array, a preparation method and a gas multi-component concentration detection method are disclosed in patent document CN110361436A. The gradient stack array includes at least two microporous filtration membrane / semiconductor gas sensitive membrane stack devices arranged from top to bottom. The pore size of the microporous filtration membrane on each microporous filtration membrane / semiconductor gas sensitive membrane stack device decreases from top to bottom. The preparation method includes: first, preparing microporous filtration membrane / semiconductor gas sensitive membrane stack devices with different pore sizes, and then arranging the microporous filtration membrane / semiconductor gas sensitive membrane stack devices with different pore sizes from top to bottom according to the pore size from large to small. The gradient stack array prepared by the above preparation method can be used for detection of gas multi-component concentration. The invention can realize detection of the concentration of each component of known multi-component gas, has the advantages of fast and accurate detection, wide application range, etc.

[0006] The technical solution proposed by the above patent is mainly designed for the detection and identification of multi-component gas. To some extent, the sensor has the detection capability of multiple gases, but in the detection process, the mutual interference between multi-component gases will affect the detection results, which will seriously affect the performance of the sensor. The solution adopted by the above patent has to some extent processed the interference of multi-component gases, but the structure is relatively complex, and the mutual interference between the component gases has not been effectively solved.

[0007] In addition, on the one hand, there are differences in understanding between those skilled in the art; on the other hand, the inventors have studied a large number of literatures and patents when making the invention, but due to the limited space, all the details and contents are not listed in detail. However, this does not mean that the present invention does not have these characteristics of the prior art. On the contrary, the present invention already has all the characteristics of the prior art, and the applicant reserves the right to add relevant prior art in the background art. SUMMARY

[0008] The present invention discloses a microstructure gas sensor system, comprising a substrate for depositing a sensitive material, a detection electrode for detecting electrical changes, and an insulating layer for providing support, characterized in that the sensitive material is deposited onto the substrate to define at least two deposition areas on the substrate, wherein the portion deposited onto the detection electrode and the insulating layer forms a sacrificial area to reduce interference in multi-component gas detection.

[0009] According to a preferred embodiment, the sacrificial area and the detection area are selectively adsorbed based on different adsorption capacity parameters including at least temperature and number of reaction sites.

[0010] According to a preferred embodiment, the sensitive material deposited to the base comprises a first structure and a second structure, the second structure is formed by treating portions of the entity of the wall of the base so that the second structure has more reaction sites, and the first structure is deposited on the detection electrode and the insulating layer, and the first structure formed in the same deposition step has less reaction sites based on the limitation of the location where it is deposited.

[0011] According to a preferred embodiment, the manufacturing method further comprises a heating electrode for heating, when the heating electrode is in an active state, the heat generated by the heating electrode is transferred to the sensitive material via conduction of the insulating layer, at least a first temperature and a second temperature are generated on the entire sensor to cause at least a portion of the sacrificial region of the sensor to generate a target condition, and at least a portion of the detection region cannot fully generate the target condition.

[0012] A manufacturing method of a gas sensor system is disclosed, characterized in that it comprises the following steps: forming a substrate, the substrate being configured with a detection electrode for detection, a base for depositing a sensitive material, and an insulating layer for support; forming a sensing layer on the substrate; defining at least two deposition regions on the base during the process of depositing the sensitive material to form the sensing layer.

[0013] According to a preferred embodiment, forming the deposition regions comprises the following steps: forming a first layer of sensitive material on the base; depositing a second sensitive material to modify the first layer of sensitive material, and the first layer of sensitive material has a first density in the first structure and a second density in the second structure.

[0014] According to a preferred embodiment, forming the substrate comprises the following steps: forming a support layer on the substrate; forming the base on the insulating layer; forming at least one detection electrode on the base; forming a heating electrode on the support layer; and forming the insulating layer on the heating electrode.

[0015] According to a preferred embodiment, forming the detection electrode comprises the following steps: forming a detection substrate on the insulating layer; treating the detection substrate to facilitate the formation of the first structure, wherein the treatment of the detection substrate at least includes removing the first functional layer, and the second functional layer is maintained during the removal of the first functional layer.

[0016] According to a preferred embodiment, forming the base comprises the following steps: forming a detection substrate on the insulating layer and the detection electrode; treating the detection substrate to form the base, wherein the base has a wall portion forming the first structure and a through hole forming the second structure.

[0017] According to a preferred embodiment, the manufacturing method further comprises the following steps: forming a plurality of thermal insulation regions on the substrate to define a plurality of cantilever beams extending between the non-sensing region and the sensing region.

[0018] In order to improve the performance of the sensor, various forms are used in the prior art to increase the reaction sites of the gas, and three-dimensional materials such as nanotubes are widely used due to their high specific surface area and high air diffusion rate. Taking the example of the double-pass porous substrate of the present application, compared with the traditional sensor, the way of depositing the sensitive material to the side wall of the double-pass porous substrate greatly increases the deposition area of the sensitive material, but the surface of the substrate on which the sensitive material is deposited is usually smooth in the prior art, and the deposited sensitive material can only contact the gas on its surface layer, and metal particles need to be deposited on the surface of the sensitive material to form multiple reaction sites on the surface of the sensitive material, and the performance of the sensor is limited. In order to further improve the performance of the sensor, in the process of forming the substrate aperture by using acid and alkali etching, the smooth side wall of the double-pass porous substrate is roughened, so that the structure of the sensitive material deposited on the side wall of the double-pass porous substrate is more loose, which is convenient for forming reaction sites, and also facilitates the diffusion of gas in the metal oxide layer.

[0019] Further, most of the sensors in the prior art are mainly designed to detect a single gas, but in the specific application scenario of the sensor, the gas contacted by the sensor is often a mixed gas containing multiple components, so during the operation of the sensor, it is inevitable that part of the gas other than the gas to be detected will interfere with the detection of the single gas. In order to solve the above problem, the present application reduces the interference of other gases on the sensor by setting a sacrifice area.

[0020] Specifically, when depositing the sensitive material by using atomic layer deposition technology and the like, the deposition surface of the sensitive material includes three parts (insulating layer, detection electrode and inner wall of the double-pass porous substrate), and the heating electrode arranged on the other surface of the insulating layer (the other surface opposite to the surface of the insulating layer on which the detection electrode is arranged) transmits its heat to the surface of the insulating layer through heat conduction. Compared with the sensitive material arranged on the side wall of the double-pass porous substrate, the sensitive material deposited on the surface of the insulating layer and the detection electrode is in direct contact with the insulating layer, and its heat conduction effect is better than the indirect conduction through the side wall of the double-pass porous substrate. When the sensitive material deposited on the side wall of the double-pass porous substrate as the main sensing area is at its predetermined sensing temperature, the sensitive material deposited on the surface of the insulating layer and the detection electrode usually has a higher temperature, which can be used as a sacrifice area to absorb part of the interfering gas.

[0021] Further, the above setting method forms a sacrifice area to some extent at the part where the sensitive material contacts the insulating layer, but in the process of use, the sensitive material as the sacrifice area also partially adsorbs the gas to be detected, causing detection error. Compared with the sensitive material with the double-pass porous side wall, the insulating layer and the detection electrode of the present application have a more dense surface structure, the sensitive material deposited on the surface of the insulating layer and the detection electrode has a lower porosity, and thus the reaction site is only concentrated on the surface of the sensitive material, reducing the adsorption performance of the sacrifice area, so that the sensor can absorb part of the interfering gas, avoiding the influence of the sacrifice area on the gas to be detected.

[0022] Further, the size of the sensor is small, mostly micron-level, nanometer-level size, and the temperature difference will be relatively small to some extent when it is heated, which cannot meet the temperature requirement of the above setting sacrifice area. In the present application, the reaction site of the sensor is increased by increasing the area of the substrate side wall, so that the substrate usually has a relatively large thickness (usually in tens of microns to several tens of microns). Based on the heating mode of heat conduction, the temperature value of the sensitive material arranged on the double-pass porous substrate side wall and the sensitive material deposited on the surface of the insulating layer and the detection electrode will differ by 100K, and compared with the sensitive material deposited on the surface of the insulating layer and the detection electrode, the temperature rising time of the sensitive material on the double-pass porous side wall lags behind, and the difference in heat response time and selectivity can make the component gas with cross sensitivity adsorbed to different areas at different times, that is, the interfering gas is adsorbed to the sacrifice area first, and the resistance generated by the interfering gas is detected before the gas to be detected, so that the resistance of the gas to be detected can more accurately reflect its concentration and other related parameters.

[0023] Further, the roughening operation of the double-pass porous side wall based on the above increasing the reaction site of the sensitive material on the double-pass porous side wall makes the sensitive material form a plurality of air-filled cavities during the deposition process, so that the heat conduction coefficient of the sensitive material deposited on the double-pass porous wall is further reduced, and in the initial heating state, the temperature difference between the sacrifice area and the sensing area is further increased, avoiding the mutual interference between the sacrifice area and the sensing area.

[0024] Further, in order to reduce the energy consumption of the sensor, the prior art mostly uses pulse voltage to heat the sensor, and the heating process of the sensor includes two processes of power-on heating and power-off cooling. Under the above heating mode, the temperature is reduced to a certain extent and then supplemented to reach the target temperature, so that the first structure can reach the target condition required by the first structure at least including temperature (the target condition is that the parameters of at least including temperature of the multiple reaction sites of the sacrifice region can meet the adsorption parameter requirement of the interference gas, usually the adsorption temperature of the interference gas is high, so that when the detection region meets the temperature requirement of the to-be-detected gas in the above pulse heating process, the sacrifice region will appear multiple processes meeting the target condition and can adsorb the interference gas) before the second structure, further enhancing the selectivity of the sacrifice region and the sensing region. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a simplified overall structure schematic diagram of the microstructure gas sensor system of the present application;

[0026] Figure 2 is a simplified flowchart of the manufacturing method of the microstructure gas sensor system of the present application;

[0027] Figure 3 is a simplified overall structure schematic diagram of the first structure and the second structure of the microstructure gas sensor system of the present application.

[0028] LIST OF REFERENCE NUMERALS

[0029] 1: substrate; 2: detection electrode; 3: insulation layer; 4: heating electrode; 5: sensing layer; 100: first structure; 200: second structure. DETAILED DESCRIPTION

[0030] The present application will be described in detail below with reference to the accompanying drawings.

[0031] As Figure 1 shown in the present application, a microstructure gas sensor system is disclosed, comprising: a substrate 1 for depositing sensitive material, a detection electrode 2 for detecting electrical changes, and an insulation layer 3 for providing support, characterized in that the sensitive material is deposited to the substrate 1 to define at least two deposition regions on the substrate 1, wherein the part deposited to the detection electrode 2 and the insulation layer 3 forms a sacrifice region to reduce interference in multi-component gas detection.

[0032] According to a preferred embodiment, the sacrifice region and the detection region are selectively adsorbed based on the difference in different adsorption capacity parameters at least including temperature and reaction site number.

[0033] According to a preferred embodiment, the sensitive material deposited to the substrate 1 comprises a first structure and a second structure, the second structure is formed by processing the partial entity of the wall of the substrate 1 to form the second structure so that the second structure has more reaction sites, and the first structure is deposited on the detection electrode 2 and the insulating layer 3, and the first structure formed in the same deposition step has less reaction sites based on the limitation of the site where it is deposited.

[0034] According to a preferred embodiment, a heating electrode 4 is further included for heating, when the heating electrode 4 is in working state, the heat generated by the heating electrode 4 is transmitted to the sensitive material via the conduction of the insulating layer 3, at least a first temperature and a second temperature are generated on the entire sensor to cause at least a partial sacrificial area of the sensor to generate a target condition, and at least a partial detection area cannot completely generate the target condition.

[0035] As shown in Figure 3 , in the process of depositing the sensitive material, due to the two different flatness of the deposition surface at the wall of the through hole of the substrate and the opening of the through hole, the deposition effect of the metal oxide layer has a large difference, so that the reaction sites of the sensitive material deposited to the detection electrode and the insulating layer can only form relatively fewer reaction sites on the surface of the sensitive material by depositing a second sensitive material modification on the surface, so as to avoid the first structure from adsorbing the target gas to be detected, and the metal oxide deposited to the wall of the substrate forms a relatively loose structure, the reaction sites between the metal oxide grains inside the metal oxide and the modified surface of the second sensitive material are formed, which has more reaction sites than the first structure, so that after the first structure adsorbs the target gas causing interference, the second structure deposited to the wall can ensure that the target gas to be detected can be detected, and based on the structural characteristics of the first structure, the amount of adsorption is limited, so as to avoid that after the target gas is adsorbed, there are still more reaction sites left to adsorb the target gas to be detected.

[0036] Further, the selectivity of the metal oxide to the gas mainly depends on the reaction temperature, so controlling the temperature can control the gas adsorbed by the sensor, and the substrate used in the present application can make the deposited sensitive material form a first structure and a second structure, wherein the first structure is deposited on the surface of the detection electrode and the insulating layer, and because the detection electrode and the insulating layer are treated during the manufacturing process, the structure of the metal oxide of the above-mentioned deposited first structure is relatively dense, and the contact between the detection electrode or the insulating layer and the surface of the insulating layer conducts heat, and compared with the position of the second structure, the heat loss by thermal convection is small, so the heat transfer efficiency between the insulating layer and the first structure is higher, the heat retention effect is relatively good, and the temperature rising speed is faster, so under the same heating condition, the temperature rising speed of the first structure is faster than that of the second structure, and the temperature of the first structure is higher than that of the second structure, and the thickness of the substrate is usually tens of microns to several tens of microns or more, so the temperature difference of the first structure and the second structure of the micro scale can reach 100K, and the temperature difference exists in the longitudinal direction, and the temperature in the horizontal direction is relatively uniform and does not interfere with the detection. Therefore, the sensor can be designed based on the differences in the distribution density and temperature of the first structure and the second structure of the second sensitive material, so that the first structure can satisfy the adsorption capacity of the target gas, and when the multi-component gas containing the target gas and the gas to be detected appears, the target gas can be adsorbed at the first structure, and the temperature generated by the target gas can be at the position of the first structure.

[0037] Further, the sacrifice region and the detection region of the present application are located in the same through hole, when the gas diffuses into the through hole, the diffusion degree of the target gas and the gas to be detected is the same, and the distribution of the first structure and the second structure is also uniform, so as to avoid local data anomalies and interference, and the component gas with cross sensitivity can be adsorbed to different regions at different times, the target gas is adsorbed to the sacrifice region first, and the resistance generated by the target gas is detected before the gas to be detected, so that the resistance of the gas to be detected can more accurately reflect the concentration and other related parameters. In order to reduce the energy consumption of the sensor, pulse voltage is usually used to heat the sensor in the prior art, and under the above heating mode, the temperature of the sensor of the first structure rises to a certain temperature, and then is relatively kept at a stable temperature, so as to further increase the temperature difference between the sacrifice region and the sensing region, and further enhance the selectivity of the sacrifice region and the sensing region, and further reduce the interference of the interference gas.

[0038] Furthermore, the above-mentioned configuration creates a sacrificial region at the contact point between the sensitive material and the insulating layer. However, during use, the sensitive material in this sacrificial region may also partially adsorb the gas to be detected, causing detection errors. Compared to the sensitive material on the sidewall of a dual-channel porous substrate, the insulating layer and detection electrode of this invention have a denser surface structure. The porosity of the sensitive material deposited on the surface of the insulating layer and detection electrode is lower, and thus its reaction sites are concentrated only on the surface of the sensitive material, reducing the adsorption performance of the sacrificial region. This allows the sensor to absorb some interfering gases, preventing the sacrificial region from affecting the gas to be detected.

[0039] Furthermore, the sensors are relatively small, mostly in the micrometer or nanometer range. Heating them results in a small temperature difference, which cannot meet the temperature requirements for setting the sacrificial region. In this invention, the sensor increases the reaction sites by increasing the area of ​​the substrate sidewall. Therefore, the substrate usually has a relatively large thickness (typically tens of micrometers to hundreds of micrometers). Based on the heating method of thermal conduction, the temperature of the sensitive material on the sidewall of the dual-channel porous substrate differs by 100K from that of the sensitive material deposited on the insulating layer and the surface of the detection electrode. Moreover, the temperature rise of the sensitive material on the sidewall of the dual-channel porous substrate is delayed compared to that of the sensitive material deposited on the insulating layer and the surface of the detection electrode. The difference in thermal response time and selectivity allows the component gas with cross-sensitivity to be adsorbed into different regions at different times. That is, the interfering gas is adsorbed into the sacrificial region before the gas to be detected, and the resistance it generates is detected before the gas to be detected. This allows the resistance of the gas to be detected to more accurately reflect its concentration and other related parameters.

[0040] In particular, for ease of understanding, an example of the substrate 1 for depositing sensitive materials provided by the present invention may be a porous alumina substrate (such as a single-pass porous alumina template or a double-pass porous alumina template), but this should not be regarded as a limitation on the specific structure of the present invention. The substrate 1 described in the present invention may also be formed from one or more of titanium oxide, silicon oxide, tantalum oxide, zirconium oxide or gallium nitride.

[0041] like Figure 2 The sensor manufacturing method disclosed in this invention includes the following steps:

[0042] S1. Deposit a support layer on the substrate;

[0043] S2, Deposition heating resistance wire;

[0044] S3, deposited isolation layer;

[0045] S4, Deposition detection electrode;

[0046] S5, deposited metal electrode;

[0047] S6, forming a porous substrate by anodic oxidation;

[0048] S7, depositing a gas sensitive material on the porous substrate;

[0049] S8, depositing a catalytic material;

[0050] S9, etching a multi-cantilever structure.

[0051] Optionally, the substrate can be formed from one or more of silicon-based, sapphire-based, gallium nitride, and silicon carbide.

[0052] Optionally, the support layer can be formed from one or more of silicon dioxide and silicon nitride.

[0053] Optionally, one particular example of the isolation layer can be silicon oxide.

[0054] Optionally, the porous substrate can be formed from one or more of titanium oxide, silicon oxide, tantalum oxide, aluminum oxide, zirconium oxide, and gallium nitride.

[0055] Optionally, in the disclosed sensor fabrication method, one or more of the following processes can be utilized, including but not limited to: thermal evaporation, electron beam evaporation, ion beam sputtering, pulsed laser deposition, atomic layer deposition, plasma enhanced atomic layer deposition, chemical vapor deposition, low pressure chemical vapor deposition, inkjet printing, nano-aerosol spray, and aerosol jet 3D printing, etc. For forming the various layer structures in the disclosed sensor, one skilled in the art can determine the specific process as needed.

[0056] Optionally, the microsensor chip can be divided into five layers, the substrate can be a double-side polished single crystal silicon; a silicon dioxide layer formed on the front and back of the silicon substrate by thermal growth; a thin film prepared by magnetron sputtering or evaporation, and signal electrodes and micro-heaters formed by photolithography; an aluminum film formed on the layer by magnetron sputtering, and a nanoporous aluminum oxide film formed by electrochemical anodic oxidation, mainly to increase the adhesion between the sensitive material and the substrate; a sensitive film formed by sol-gel method; a thermal isolation structure on the substrate formed by anisotropic etchant etching, and the silicon substrate in the center of the back of the chip is thinned.

[0057] According to a preferred embodiment, the process of depositing a sensitive material to the substrate 1 to form the sensing layer 5 defines at least two deposition areas on the substrate 1.

[0058] According to a preferred embodiment, forming the deposition areas includes the following steps: forming a first sensitive material layer on the substrate 1; depositing a second sensitive material to modify the first sensitive material layer, and the first sensitive material layer has a first density in the first structure and a second density in the second structure.

[0059] According to a preferred embodiment, forming the substrate comprises the steps of forming a support layer on the substrate; forming a base on the insulating layer; forming at least one detection electrode on the base; forming a heating electrode on the support layer; and forming an insulating layer on the heating electrode.

[0060] According to a preferred embodiment, forming the detection electrode comprises the steps of forming a detection substrate on the insulating layer; processing the detection substrate to produce a first structure, wherein processing the detection substrate comprises at least removing a first functional layer and maintaining a second functional layer during removal of the first functional layer.

[0061] According to a preferred embodiment, forming the base 1 comprises the steps of forming a detection substrate on the insulating layer 3 and the detection electrode 2; processing the detection substrate to produce the base 1, wherein the base 1 has a wall portion forming a first structure and a through hole forming a second structure.

[0062] According to a preferred embodiment, the method further comprises the step of forming a plurality of thermally insulating regions on the substrate to define a plurality of cantilevers extending between the non-sensing region and the sensing region.

[0063] Optionally, the micro-heating platform of gas sensitive material is fabricated by a full set of MEMS methods. Aluminum is sputtered by a semiconductor method, and a porous alumina carrier material is formed by a two-step anodization method. The surface layer of gas sensitive material is deposited by an atomic layer deposition technique, and the material includes Sn02, ZnO, In203, NiO, etc. The surface layer of gas sensitive material is decorated by a noble metal such as Pt and Pd deposited by an atomic layer deposition technique. A cantilever structure is formed by a dry etching and laser engraving technique, and the cantilever includes two cantilevers, four cantilevers, etc. The heating electrode and the detection electrode are fabricated by an electron beam evaporation or sputtering method using a metal molybdenum mask. The surface layer of noble metal catalytic material such as Pt and Pd is obtained by dropping and heating a pretreated aqueous solution of H2[PtCl6] on the sensing region.

[0064] Optionally, when the base 1 is selected as a porous alumina template, the thickness thereof can be 10-50 um. In particular, the thickness of the detection electrode and the heating electrode can be 100-300 nm. The width of the heating portion of the heating electrode can be 20-70 um. The pore size of the porous alumina can be 200-500 nm.

[0065] Preferably, the electrode can comprise platinum (Pt), palladium (Pd), gold (Au), rhodium (Rh), rhenium (Re), ruthenium (Ru), indium (In), titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), or an alloy composed of one or more of these components.

[0066] Throughout the specification, "preferably", "particularly preferred", and "preferably comprises" or "particularly preferably comprises" or "preferably have" or "preferably comprises" or "particularly preferably comprises" means "preferably, but not exclusively", and thus these terms are not to be interpreted in an exclusive or exhaustive sense.

[0067] It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that one skilled in the art will be able to devise modifications and alternatives that are within the scope of the application. The disclosure of the application is illustrative only and not restrictive of the application. The scope of the application should be determined not by the description of the preferred embodiments but by the scope of the claims appended hereto.

Claims

1. A microstructured gas sensor system, comprising: A substrate (1) for depositing a sensitive material, a detection electrode (2) for detecting an electrical change, and an insulating layer (3) for providing support, arranged in sequence, characterized in that, The substrate (1) is a porous substrate, the substrate (1) has a wall portion forming a second structure (200) and a through hole forming a first structure (100), the sensitive material deposited to the substrate (1) includes the first structure (100) and the second structure (200), the second structure (200) is formed by processing the wall portion of the substrate (1) in a partial solid manner, so that the second structure (200) has more reaction sites, and the first structure (100) is deposited on the detection electrode (2) and the insulating layer (3), and the first structure (100) formed in the same deposition step has fewer reaction sites based on the limitation of the site where it is deposited, The sensitive material is deposited to the substrate (1) to define at least two deposition areas on the substrate (1), wherein the part deposited to the detection electrode (2) and the insulating layer (3) forms a sacrificial area for adsorbing interfering gases to reduce interference in multi-component gas detection, The part deposited to the wall portion of the substrate (1) forms a detection area, the sacrificial area and the detection area are located in the same through hole, and the sacrificial area and the detection area are different in adsorption capacity parameters based on temperature and number of reaction sites to selectively adsorb corresponding gases.

2. The microstructured gas sensor system of claim 1, wherein, Further comprising a heating electrode (4) for heating, when the heating electrode (4) is in working condition, the heat generated by the heating electrode (4) is transmitted to the sensitive material via conduction of the insulating layer (3), at least a first temperature and a second temperature are generated on the entire sensor system to make at least part of the sacrificial area of the sensor system produce target conditions, and at least part of the detection area cannot completely produce target conditions, and the target conditions are that at least the temperature parameter of the multiple reaction sites of the sacrificial area can meet the adsorption parameter requirement of the interfering gas.

3. A method of manufacturing the microstructured gas sensor system of claim 1 or 2, characterized in that, The steps include: Forming a substrate, the substrate is configured with a detection electrode (2) for detection, a substrate (1) for depositing a sensitive material, and an insulating layer (3) for support; Forming a sensing layer (5) on the substrate; The sensitive material is deposited to the substrate (1) to form the sensing layer (5) to define at least two deposition areas on the substrate (1).

4. The method of claim 3, wherein, Forming the deposition area includes the following steps: Forming a first sensitive material layer on the substrate (1); Depositing a second sensitive material to modify the first sensitive material layer, and the first sensitive material layer has a first density in the first structure (100) and a second density in the second structure (200).

5. The method of claim 4, wherein, Forming the substrate includes the following steps: Forming a support layer on the substrate; Forming a substrate (1) on the insulating layer; Forming at least one detection electrode (2) on the substrate; Forming a heating electrode (4) on the support layer; And forming an insulating layer (3) on the heating electrode.

6. The method of claim 5, wherein, Forming the detection electrode (2) includes the following steps: Forming a detection substrate on the insulating layer; The detection substrate is processed so as to create the first structure (100), wherein the processing of the detection substrate comprises at least removing the first functional layer, and the second structure (200) is maintained during the removal of the first functional layer.

7. The method of claim 6, wherein, Forming the substrate (1) comprises the following steps: forming a detection substrate on the insulating layer (3) and the detection electrode (2); processing the detection substrate so as to create the substrate (1), wherein the substrate (1) has a wall portion forming the second structure (200) and a through hole forming the first structure (100).

8. The method of claim 7, wherein, Further comprising the following steps: forming a plurality of thermally insulating regions on the substrate thereby defining a plurality of cantilever beams extending between non-sensing regions and sensing regions.

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