Low-tension aluminum etching solution for display and preparation method thereof
A low-tension aluminum etching solution was prepared by combining phosphoric acid, nitric acid, sulfuric acid, acetic acid and a stabilizer, which solved the problems of slow speed and control of existing aluminum etching solutions, and achieved a high-efficiency and stable etching effect, suitable for the microstructure processing of displays.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGYIN RUNMA ELECTRONICS MATERIAL
- Filing Date
- 2023-02-28
- Publication Date
- 2026-05-15
AI Technical Summary
Existing aluminum etching solutions are slow when etching aluminum materials, and it is difficult to control the etching angle and amount, which affects product yield and etching rate, and cannot meet the miniaturization and high performance requirements of semiconductor devices and liquid crystal displays.
A combination of phosphoric acid, nitric acid, sulfuric acid, acetic acid, and stabilizers, along with surfactants, is used to improve the performance of the etching solution. This includes the preparation and modification of sodium alginate nanospheres, resulting in a low-tension aluminum etching solution that controls the etching rate and reduces lateral etching.
It improves the aluminum etching rate, has good etching stability, virtually eliminates lateral etching, has a simple preparation process, is suitable for aluminum etching solutions used in displays, and meets the requirements of high-precision microstructure processing.
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Abstract
Description
Technical Field
[0001] This invention relates to the field of etching solution technology, specifically to a low-tension aluminum etching solution for displays and its preparation method. Background Technology
[0002] In recent years, there has been an increasing need for high-precision electrode and gate wiring materials in micro-assemblies for semiconductor devices such as semiconductor elements and liquid crystal display elements. It is recommended to use metal materials with low resistance. Aluminum is a light metal with low density and is the most important wire material in semiconductor manufacturing. It has advantages such as low resistance, ease of deposition and etching. Aluminum's conductivity is second only to silver and copper, ranking third, and it is used to manufacture various wires.
[0003] Examples of techniques for processing such thin metal films to form patterns such as wiring microstructures include wet etching and dry etching. In wet etching, a photoresist pattern formed on the surface of the thin metal film using chemical reagents via photolithography is used as a shield for chemical etching, thus forming the pattern on the metal film. Compared to dry etching, wet etching is more economical, requiring less expensive equipment and using relatively inexpensive chemical reagents. This wet etching technique allows for the uniform etching of large substrate areas while achieving high production yield per unit time.
[0004] Aluminum etching solution is a colorless, transparent liquid with an acidic odor. The book *Microfabrication Technology*, published by Chemical Industry Press in 2004, describes a chemical etching solution for aluminum, primarily an aqueous solution composed of phosphoric acid and nitric acid. The drawback of this etching solution is its slow etching rate. In existing technologies, etching solutions are mainly prepared by stirring, mixing, and filtering phosphoric acid, nitric acid, and acetic acid. These etching solution compositions are widely used in methods for forming wiring and electrodes on the surfaces of semiconductor substrates and glass substrates.
[0005] Patent CN102181867A describes a wet etching process for multilayer films, where two metal films, aluminum and molybdenum, are simultaneously etched using the same solution. Due to the galvanic reaction occurring between the different metal layers, different etching behaviors occur, resulting in a higher etching rate compared to single-layer etching (see, for example, the Conference Record of the 1994 International Display Research Conference, p. 424). This means that the molybdenum-aluminum etching solution composition has a slow etching rate when etching a single aluminum metal film. Furthermore, controlling the etching angle and etching amount is often difficult when etching pure aluminum materials, affecting product yield and etching rate.
[0006] In recent years, as the demand for semiconductor devices and liquid crystal displays has continued to increase, the requirements for miniaturization and high performance of the wiring and electrodes in these devices have also become increasingly stringent. The etching effect directly affects the quality of circuit board manufacturing processes and the accuracy and quality of high-density fine wire images. To meet the higher demands for product miniaturization and high performance, it is necessary for those skilled in the art to further improve existing aluminum etching solutions. Summary of the Invention
[0007] The purpose of this invention is to provide a low-tension aluminum etching solution for displays and its preparation method. The preparation process is simple and the conditions are mild. Compared with existing aluminum etching solutions, it has a high etching rate for aluminum, stable reaction, no residue, and virtually no side etching phenomenon, and has broad application prospects.
[0008] The technical solution of this invention is implemented as follows:
[0009] This invention provides a low-tension aluminum etching solution for displays, comprising the following raw materials: phosphoric acid, nitric acid, sulfuric acid, acetic acid, stabilizer, surfactant, and water; the method for preparing the stabilizer is as follows:
[0010] S1. Sodium alginate was dissolved in water, and calcium chloride solution was added dropwise to emulsify and obtain nanospheres;
[0011] S2. Add the nanospheres obtained in step S1 to an ethanol solution, add a silane coupling agent, heat and stir to react, and obtain double bond modified nanospheres;
[0012] The silane coupling agent is a silane coupling agent with double bonds;
[0013] S3. Mix the double bond modified nanospheres obtained in step S2, dimethylaminoethyl methacrylate and initiator, heat and stir to react, centrifuge, filter, wash to obtain modified nanospheres;
[0014] S4. Add the modified nanospheres obtained in step S3 to an organic solvent, add alkali and alkyl chlorocarbon, heat and stir to react, centrifuge, filter, wash and dry to obtain a stabilizer.
[0015] As a further improvement of the present invention, it is prepared from the following raw materials in parts by weight: 10-20 parts of phosphoric acid, 7-12 parts of nitric acid, 4-7 parts of sulfuric acid, 5-10 parts of acetic acid, 3-5 parts of stabilizer, 2-4 parts of surfactant, and 30-50 parts of water.
[0016] As a further improvement of the present invention, the surfactant is selected from at least one of sodium dodecylbenzenesulfonate, sodium dodecyl sulfonate, sodium dodecyl sulfate, sodium tetradecyl sulfonate, sodium tetradecylbenzenesulfonate, sodium hexadecylbenzenesulfonate, sodium hexadecyl sulfonate, sodium hexadecyl sulfate, sodium octadecyl sulfonate, sodium octadecylbenzenesulfonate, and sodium octadecyl sulfate.
[0017] As a further improvement of the present invention, the sulfuric acid is concentrated sulfuric acid with a concentration greater than 98%.
[0018] As a further improvement of the present invention, the concentration of the calcium chloride solution in step S1 is 2-4 wt%; the emulsification speed is 12000-15000 r / min, and the time is 5-10 min.
[0019] As a further improvement of the present invention, the concentration of the ethanol solution in step S2 is 50-70 wt%; the silane coupling agent with double bonds is selected from at least one of KH570, A171, A172, and A151; the mass ratio of the nanospheres to the silane coupling agent is 10:2-3; the temperature of the heating and stirring reaction is 70-90°C, and the time is 30-50 min.
[0020] As a further improvement of the present invention, the mass ratio of the double bond modified nanospheres, dimethylaminoethyl methacrylate and the initiator in step S3 is 20:3-5:0.1-0.2; the initiator is selected from at least one of sodium persulfate, potassium persulfate and ammonium persulfate; the heating and stirring reaction temperature is 40-60℃ and the time is 1-2h.
[0021] As a further improvement of the present invention, the organic solvent in step S4 is selected from at least one of dichloromethane, chloroform, ethyl acetate, methyl acetate, butyl acetate, petroleum ether, cyclohexane, and n-hexane; the base is selected from at least one of triethylamine, diethylamine, NaOH, and KOH; the alkyl chloride has 12-18 carbon atoms in its alkyl chain and is a straight-chain alkyl chain; the mass ratio of the modified nanospheres, the base, and the alkyl chloride is 20:4-6:5-7; and the temperature of the stirred reaction is 40-60℃, and the time is 2-3 hours.
[0022] As a further improvement of the present invention, the method for preparing the stabilizer is as follows:
[0023] S1. Dissolve 10-30 parts by weight of sodium alginate in 50 parts by weight of water, then add 2-4 wt% calcium chloride solution dropwise, emulsify at 12000-15000 r / min for 5-10 min to obtain nanospheres;
[0024] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 50-70 wt% ethanol solution, add 2-3 parts by weight of silane coupling agent, heat to 70-90℃, stir and react for 30-50 min to obtain double bond modified nanospheres.
[0025] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 3-5:1;
[0026] S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 3-5 parts by weight of dimethylaminoethyl methacrylate and 0.1-0.2 parts by weight of initiator and dissolve them in 100 parts by weight of water. Heat to 40-60℃, stir and react for 1-2 hours, centrifuge, filter, and wash to obtain modified nanospheres.
[0027] S4. Add 20 parts by weight of the modified nanospheres obtained in step S3 to 100 parts by weight of organic solvent, add 4-6 parts by weight of alkali and 5-7 parts by weight of alkyl chloro hydrocarbon, heat to 40-60℃, stir for 2-3 hours, centrifuge, filter, wash, and dry to obtain stabilizer.
[0028] The alkyl chlorides described herein have 12-18 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
[0029] The present invention further protects a method for preparing the above-mentioned low-tension aluminum etching solution for displays, comprising the following steps: stirring and mixing phosphoric acid, nitric acid, sulfuric acid, acetic acid, surfactant and water evenly, adding a stabilizer, stirring and mixing to obtain the low-tension aluminum etching solution for displays.
[0030] The present invention has the following beneficial effects: In the present invention, the appropriate proportions of phosphoric acid, nitric acid, sulfuric acid and acetic acid are mixed to effectively etch aluminum alloys, effectively decompose the passivation layer on the aluminum surface and improve etching efficiency.
[0031] The added stabilizer, on the one hand, forms sodium alginate spheres that decompose in acid to form sodium alginate gel, which has a good locking and controlled release effect on acid, thereby controlling the etching rate. On the other hand, the structure of long-chain alkyl quaternary ammonium salt has a good effect on reducing surface tension. The synergistic compounding with surfactants can improve the wetting and corrosion uniformity of the etching solution on the metal film, that is, improve the smoothness of the surface after etching and reduce the amount of side etching.
[0032] The low-tension aluminum etching solution for displays prepared in this invention has a simple preparation process and mild conditions. Compared with existing aluminum etching solutions, it has a high etching rate for aluminum, stable reaction, no residue, and virtually no side etching, and has broad application prospects. Detailed Implementation
[0033] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Example 1
[0034] Raw material composition (parts by weight): 10 parts phosphoric acid, 7 parts nitric acid, 4 parts 98% concentrated sulfuric acid, 5 parts acetic acid, 3 parts stabilizer, 2 parts sodium dodecyl sulfonate, and 30 parts water.
[0035] The specific method for preparing the stabilizer is as follows:
[0036] S1. Dissolve 10 parts by weight of sodium alginate in 50 parts by weight of water, then add 2 wt% calcium chloride solution dropwise, emulsify at 12000 r / min for 5 min to obtain nanospheres;
[0037] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 50 wt% ethanol solution, add 2 parts by weight of silane coupling agent, heat to 70°C, stir and react for 30 min to obtain double bond modified nanospheres.
[0038] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 3:1;
[0039] S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 3 parts by weight of dimethylaminoethyl methacrylate and 0.1 parts by weight of potassium persulfate and dissolve them in 100 parts by weight of water. Heat to 40°C, stir and react for 1 hour, centrifuge, filter, wash and obtain modified nanospheres.
[0040] S4. Add 20 parts by weight of the modified nanospheres obtained in step S3 to 100 parts by weight of dichloromethane, add 4 parts by weight of KOH and 5 parts by weight of alkyl chloro hydrocarbons, heat to 40°C, stir and react for 2 hours, centrifuge, filter, wash and dry to obtain the stabilizer.
[0041] The alkyl chlorides described herein have 12 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
[0042] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: stirring and mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium dodecyl sulfonate and water until homogeneous, adding a stabilizer, stirring and mixing to obtain the low-tension aluminum etching solution for displays. Example 2
[0043] Raw material composition (parts by weight): 20 parts phosphoric acid, 12 parts nitric acid, 7 parts 98% concentrated sulfuric acid, 10 parts acetic acid, 5 parts stabilizer, 4 parts sodium octadecyl sulfate, and 50 parts water.
[0044] The specific method for preparing the stabilizer is as follows:
[0045] S1. Dissolve 30 parts by weight of sodium alginate in 50 parts by weight of water, then add 4 wt% calcium chloride solution dropwise, emulsify at 15000 r / min for 10 min to obtain nanospheres;
[0046] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 70 wt% ethanol solution, add 3 parts by weight of silane coupling agent, heat to 90°C, stir and react for 50 min to obtain double bond modified nanospheres.
[0047] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 5:1;
[0048] S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 5 parts by weight of dimethylaminoethyl methacrylate and 0.2 parts by weight of potassium persulfate and dissolve them in 100 parts by weight of water. Heat to 60°C, stir and react for 2 hours, centrifuge, filter, wash and obtain modified nanospheres.
[0049] S4. Add 20 parts by weight of the modified nanospheres obtained in step S3 to 100 parts by weight of chloroform, add 6 parts by weight of triethylamine and 7 parts by weight of alkyl chloro hydrocarbon, heat to 60°C, stir for 3 hours, centrifuge, filter, wash, and dry to obtain the stabilizer.
[0050] The alkyl chlorides described herein have 18 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
[0051] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium octadecyl sulfate and water evenly, adding a stabilizer, and mixing to obtain the low-tension aluminum etching solution for displays. Example 3
[0052] Raw material composition (parts by weight): 15 parts phosphoric acid, 10 parts nitric acid, 5 parts 98% concentrated sulfuric acid, 7 parts acetic acid, 4 parts stabilizer, 3 parts sodium hexadecyl sulfate, and 40 parts water.
[0053] The specific method for preparing the stabilizer is as follows:
[0054] S1. Dissolve 20 parts by weight of sodium alginate in 50 parts by weight of water, then add 3 wt% calcium chloride solution dropwise, emulsify at 13500 r / min for 7 min to obtain nanospheres;
[0055] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 60 wt% ethanol solution, add 2.5 parts by weight of silane coupling agent, heat to 80°C, stir and react for 40 min to obtain double bond modified nanospheres.
[0056] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 4:1;
[0057] S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 4 parts by weight of dimethylaminoethyl methacrylate and 0.15 parts by weight of sodium persulfate and dissolve them in 100 parts by weight of water. Heat to 50°C, stir and react for 1.5 h, centrifuge, filter, wash and obtain modified nanospheres.
[0058] S4. Add 20 parts by weight of the modified nanospheres obtained in step S3 to 100 parts by weight of ethyl acetate, add 5 parts by weight of NaOH and 6 parts by weight of alkyl chloro hydrocarbon, heat to 50°C, stir and react for 2.5 h, centrifuge, filter, wash and dry to obtain the stabilizer.
[0059] The alkyl chlorides described herein have 16 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
[0060] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium hexadecyl sulfate and water evenly, adding a stabilizer, and mixing to obtain the low-tension aluminum etching solution for displays. Example 4
[0061] The difference from Example 3 is that the silane coupling agent is a single KH570. Example 5
[0062] The difference compared to Example 3 is that the silane coupling agent is a single A151.
[0063] Comparative Example 1
[0064] The difference compared to Example 3 is that step S2 was not performed during the preparation of the stabilizer.
[0065] Raw material composition (parts by weight): 15 parts phosphoric acid, 10 parts nitric acid, 5 parts 98% concentrated sulfuric acid, 7 parts acetic acid, 4 parts stabilizer, 3 parts sodium hexadecyl sulfate, and 40 parts water.
[0066] The specific method for preparing the stabilizer is as follows:
[0067] S1. Dissolve 20 parts by weight of sodium alginate in 50 parts by weight of water, then add 3 wt% calcium chloride solution dropwise, emulsify at 13500 r / min for 7 min to obtain nanospheres;
[0068] S2. Mix 20 parts by weight of the nanospheres obtained in step S1, 4 parts by weight of dimethylaminoethyl methacrylate and 0.15 parts by weight of sodium persulfate and dissolve them in 100 parts by weight of water. Heat to 50°C, stir and react for 1.5 h, centrifuge, filter, wash and obtain modified nanospheres.
[0069] S3. Add 20 parts by weight of the modified nanospheres obtained in step S2 to 100 parts by weight of ethyl acetate, add 5 parts by weight of NaOH and 6 parts by weight of alkyl chloro hydrocarbon, heat to 50°C, stir and react for 2.5 h, centrifuge, filter, wash and dry to obtain the stabilizer.
[0070] The alkyl chlorides described herein have 16 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
[0071] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium hexadecyl sulfate and water evenly, adding a stabilizer, and mixing to obtain the low-tension aluminum etching solution for displays.
[0072] Comparative Example 2
[0073] The difference compared to Example 3 is that steps S3 and S4 were not performed during the preparation of the stabilizer.
[0074] Raw material composition (parts by weight): 15 parts phosphoric acid, 10 parts nitric acid, 5 parts 98% concentrated sulfuric acid, 7 parts acetic acid, 4 parts stabilizer, 3 parts sodium hexadecyl sulfate, and 40 parts water.
[0075] The specific method for preparing the stabilizer is as follows:
[0076] S1. Dissolve 20 parts by weight of sodium alginate in 50 parts by weight of water, then add 3 wt% calcium chloride solution dropwise, emulsify at 13500 r / min for 7 min to obtain nanospheres;
[0077] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 60 wt% ethanol solution, add 2.5 parts by weight of silane coupling agent, heat to 80°C, stir and react for 40 min to obtain double bond modified nanospheres.
[0078] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 4:1.
[0079] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium hexadecyl sulfate and water evenly, adding a stabilizer, and mixing to obtain the low-tension aluminum etching solution for displays.
[0080] Comparative Example 3
[0081] The difference compared to Example 3 is that step S4 was not performed during the preparation of the stabilizer.
[0082] Raw material composition (parts by weight): 15 parts phosphoric acid, 10 parts nitric acid, 5 parts 98% concentrated sulfuric acid, 7 parts acetic acid, 4 parts stabilizer, 3 parts sodium hexadecyl sulfate, and 40 parts water.
[0083] The specific method for preparing the stabilizer is as follows:
[0084] S1. Dissolve 20 parts by weight of sodium alginate in 50 parts by weight of water, then add 3 wt% calcium chloride solution dropwise, emulsify at 13500 r / min for 7 min to obtain nanospheres;
[0085] S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 60 wt% ethanol solution, add 2.5 parts by weight of silane coupling agent, heat to 80°C, stir and react for 40 min to obtain double bond modified nanospheres.
[0086] The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 4:1;
[0087] S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 4 parts by weight of dimethylaminoethyl methacrylate and 0.15 parts by weight of sodium persulfate and dissolve them in 100 parts by weight of water. Heat to 50°C, stir and react for 1.5 h, centrifuge, filter, and wash to obtain modified nanospheres.
[0088] A method for preparing a low-tension aluminum etching solution for displays includes the following steps: mixing phosphoric acid, nitric acid, 98% concentrated sulfuric acid, acetic acid, sodium hexadecyl sulfate and water evenly, adding a stabilizer, and mixing to obtain the low-tension aluminum etching solution for displays.
[0089] Test Example 1
[0090] The displays prepared in Examples 1-5 and Comparative Examples 1-3 of this invention were subjected to performance tests using a low-tension aluminum etching solution. The results are shown in Table 1.
[0091] Foaming height: Place 20ml of the test solution into a 100ml measuring cup, fix it in a TS-type shaker, and shake for two minutes. After shaking stops, measure the foaming height after 30 seconds and 5 minutes to evaluate the foaming properties.
[0092] Etching rate: The substrate with the barrier layer is placed on an amorphous aluminum film with a film thickness of À, and immersed in an etching solution at 40°C for 1 minute. After washing with water and drying, the barrier layer is peeled off, and the etching amount is measured using a stylus-type film thickness gauge.
[0093] Etching residue:
[0094] (1) The substrate with the formed aluminum film is placed on a glass substrate and etched for 1.8 times the etching time calculated by the etching rate. Then, it is observed by an electron microscope and the residue after etching is evaluated.
[0095] (2) The substrate that forms the cable film and then the aluminum film is placed on a glass plate and etched for 1.8 times the etching time calculated by the etching rate. The substrate is then observed by an electron microscope and the residue after etching is evaluated.
[0096] Table 1
[0097]
[0098] As can be seen from the table above, the low-tension aluminum etching solution for displays prepared in Examples 1-3 of this invention has a fast etching speed, leaves no etching residue, and is not prone to foaming.
[0099] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A low-tension aluminum etching solution for displays, characterized in that, The raw materials include: phosphoric acid, nitric acid, sulfuric acid, acetic acid, stabilizer, surfactant, and water; the method for preparing the stabilizer is as follows: S1. Sodium alginate was dissolved in water, and calcium chloride solution was added dropwise to emulsify and obtain nanospheres; S2. Add the nanospheres obtained in step S1 to an ethanol solution, add a silane coupling agent, heat and stir to react, and obtain double bond modified nanospheres; The silane coupling agent is a silane coupling agent with double bonds; S3. Mix the double bond modified nanospheres obtained in step S2, dimethylaminoethyl methacrylate and initiator, heat and stir to react, centrifuge, filter, wash to obtain modified nanospheres; S4. Add the modified nanospheres obtained in step S3 to an organic solvent, add alkali and alkyl chlorocarbon, heat and stir to react, centrifuge, filter, wash and dry to obtain a stabilizer.
2. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, It is prepared from the following raw materials in parts by weight: 10-20 parts phosphoric acid, 7-12 parts nitric acid, 4-7 parts sulfuric acid, 5-10 parts acetic acid, 3-5 parts stabilizer, 2-4 parts surfactant, and 30-50 parts water.
3. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, The surfactant is selected from at least one of sodium dodecylbenzenesulfonate, sodium dodecyl sulfonate, sodium dodecyl sulfate, sodium tetradecyl sulfonate, sodium tetradecylbenzenesulfonate, sodium hexadecylbenzenesulfonate, sodium hexadecyl sulfonate, sodium hexadecyl sulfate, sodium octadecyl sulfonate, sodium octadecylbenzenesulfonate, and sodium octadecyl sulfate.
4. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, The sulfuric acid is concentrated sulfuric acid with a concentration greater than 98%.
5. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, The concentration of the calcium chloride solution in step S1 is 2-4 wt%; the emulsification speed is 12000-15000 r / min, and the time is 5-10 min.
6. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, The concentration of the ethanol solution in step S2 is 50-70 wt%; the silane coupling agent with double bonds is selected from at least one of KH570, A171, A172, and A151; the mass ratio of the nanospheres to the silane coupling agent is 10:2-3; the temperature of the heating and stirring reaction is 70-90℃, and the time is 30-50 min.
7. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, In step S3, the mass ratio of the double bond modified nanospheres, dimethylaminoethyl methacrylate, and initiator is 20:3-5:0.1-0.2; the initiator is selected from at least one of sodium persulfate, potassium persulfate, and ammonium persulfate; the heating and stirring reaction is carried out at a temperature of 40-60℃ for 1-2 hours.
8. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, In step S4, the organic solvent is selected from at least one of dichloromethane, chloroform, ethyl acetate, methyl acetate, butyl acetate, petroleum ether, cyclohexane, and n-hexane; the base is selected from at least one of triethylamine, diethylamine, NaOH, and KOH; the alkyl chloride has 12-18 carbon atoms in its alkyl chain and is a straight-chain alkyl chain; the mass ratio of the modified nanospheres, base, and alkyl chloride is 20:4-6:5-7; the heating and stirring reaction is carried out at a temperature of 40-60℃ for 2-3 hours.
9. The low-tension aluminum etching solution for displays according to claim 1, characterized in that, The specific method for preparing the stabilizer is as follows: S1. Dissolve 10-30 parts by weight of sodium alginate in 50 parts by weight of water, then add 2-4 wt% calcium chloride solution dropwise, emulsify at 12000-15000 r / min for 5-10 min to obtain nanospheres; S2. Add 10 parts by weight of the nanospheres obtained in step S1 to a 50-70 wt% ethanol solution, add 2-3 parts by weight of silane coupling agent, heat to 70-90℃, stir and react for 30-50 min to obtain double bond modified nanospheres. The silane coupling agent is a mixture of KH570 and A151 in a mass ratio of 3-5:1; S3. Mix 20 parts by weight of the double bond modified nanospheres obtained in step S2, 3-5 parts by weight of dimethylaminoethyl methacrylate and 0.1-0.2 parts by weight of initiator and dissolve them in 100 parts by weight of water. Heat to 40-60℃, stir and react for 1-2 hours, centrifuge, filter, and wash to obtain modified nanospheres. S4. Add 20 parts by weight of the modified nanospheres obtained in step S3 to 100 parts by weight of organic solvent, add 4-6 parts by weight of alkali and 5-7 parts by weight of alkyl chloro hydrocarbon, heat to 40-60℃, stir for 2-3 hours, centrifuge, filter, wash, and dry to obtain stabilizer. The alkyl chlorides described herein have 12-18 carbon atoms in their alkyl chains, and are all straight-chain alkyl chains.
10. A method for preparing a low-tension aluminum etching solution for displays as described in any one of claims 1-9, characterized in that, The process includes the following steps: mixing phosphoric acid, nitric acid, sulfuric acid, acetic acid, surfactant, and water until homogeneous; adding a stabilizer; and mixing again to obtain a low-tension aluminum etching solution for displays.