Dopant complexes and electronic assemblies

Abstract

Dopant complexes are disclosed. The dopant complexes can be formed from a dopant ion component encapsulated in a polymer matrix, wherein the dopant ion component is a metal triflate, a metal halide, a metal antimonate, or any combination thereof, and the polymer matrix comprises or consists of a hydroxyl-containing polymer. Electronic assemblies and uses of the dopant complexes are also disclosed.

Description

Technical Field

[0001] This disclosure relates to doped complexes. This disclosure also relates to electronic components. This disclosure further relates to the uses of doped complexes. Background Technology

[0002] Electronic components used in various applications typically include a layer of conductive material on a substrate. Conductive materials can be sensitive to their surrounding environment, thus requiring protection. A dopant layer can be formed on the conductive material to protect it from factors such as humidity, moisture, and temperature. The inventors recognized the need for dopant that is compatible with the conductive material, thermally stable, and protective to prevent aging of the electronic components. Summary of the Invention

[0003] Dopant complexes are disclosed. These dopant complexes are formed from dopant ionic components encapsulated in a polymer matrix, wherein the dopant ionic components are metal trifluoromethanesulfonates, metal antimonates, or any combination thereof, and the polymer matrix comprises or is composed of hydroxyl-containing polymers.

[0004] Furthermore, an electronic component is disclosed. The electronic component includes a transparent layer comprising a transparent conductive material in direct contact with the dopant layer. The dopant layer is formed of a dopant complex, which is formed of a dopant ionic component encapsulated in a polymer matrix, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer.

[0005] The use of dopant complexes formed from dopant ionic components encapsulated in a polymer matrix is ​​also disclosed for improving the aging resistance of electronic components by covering a transparent layer containing a transparent conductive material with a dopant layer formed from the dopant complex, the electronic components including a transparent layer containing a transparent conductive material in direct contact with the dopant layer, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer. Attached Figure Description

[0006] Several embodiments are illustrated in the accompanying drawings, which are included to provide a further understanding of these embodiments and form part of this specification. In the drawings:

[0007] Figure 1 A cross-sectional view of an electronic component according to one embodiment is shown schematically. Detailed Implementation

[0008] This application relates to dopant complexes formed from dopant ionic components encapsulated in a polymer matrix, wherein the dopant ionic components are metal trifluoromethanesulfonates, metal halides, metal antimonates, or any combination thereof, and the polymer matrix comprises or is composed of hydroxyl-containing polymers.

[0009] This application relates to dopant complexes formed from dopant ionic components encapsulated in a polymer matrix, wherein the dopant ionic components are metal trifluoromethanesulfonates, metal antimonates, or any combination thereof, and the polymer matrix comprises or is composed of hydroxyl-containing polymers.

[0010] This application also relates to electronic components comprising a transparent layer containing a transparent conductive material in direct contact with a dopant layer, wherein the dopant layer is formed of a dopant complex, the dopant complex being formed of a dopant ionic component encapsulated in a polymer matrix, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal halide, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer.

[0011] This application also relates to electronic components comprising a transparent layer containing a transparent conductive material in direct contact with a dopant layer, wherein the dopant layer is formed of a dopant complex, the dopant complex being formed of a dopant ionic component encapsulated in a polymer matrix, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer.

[0012] In one embodiment, the electronic component further includes a non-conductive base layer. In another embodiment, the electronic component further includes a non-conductive base layer, wherein the non-conductive base layer, a transparent layer comprising a transparent conductive material, and a dopant layer are arranged to be stacked on top of each other in a vertical direction, such that the transparent layer comprising the transparent conductive material is located between the non-conductive base layer and the dopant layer.

[0013] In one embodiment, the electronic component is a photoelectric component. In one embodiment, the electronic component is a sensor. In one embodiment, the electronic component is a touch sensor, a photovoltaic component, a heating component, a current conductor, a display component, a display electrode, an illumination component, a light switch, or a light control film.

[0014] In one embodiment, the electronic component is formable, flexible, foldable and / or stretchable, or the electronic component is formable and / or stretchable, or the electronic component is formable.

[0015] This application also relates to the use of dopant complexes formed from dopant ionic components encapsulated in a polymer matrix for improving the aging resistance of electronic components by covering a transparent layer containing a transparent conductive material with a dopant layer formed from the dopant complex, said electronic component including a transparent layer containing a transparent conductive material in direct contact with the dopant layer, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal halide, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer.

[0016] This application also relates to the use of dopant complexes formed from dopant ionic components encapsulated in a polymer matrix for improving the aging resistance of electronic components by covering a transparent layer containing a transparent conductive material with a dopant layer formed from the dopant complex, said electronic component including a transparent layer containing a transparent conductive material in direct contact with the dopant layer, wherein the dopant ionic component is a metal trifluoromethanesulfonate, a metal antimonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer.

[0017] The inventors unexpectedly discovered that encapsulating dopant ionic components within a polymer matrix effectively increased the thermal stability and accelerated environmental stability of the dopant layer. Accelerated aging is a test that uses harsh conditions such as heat, humidity, oxygen, sunlight, and vibration to accelerate the normal aging process of an article. This can also be called accelerated environmental condition testing. It can be used to help determine the long-term effects of expected stress levels in a relatively short time using controlled standard test methods typically conducted in a laboratory. When actual lifespan data is unavailable, accelerated aging can be used to estimate the service life or shelf life of a product or article.

[0018] Unless otherwise stated, the expression "aging resistance" for electronic components in this specification should be understood to mean the electronic component's ability to resist electrical and / or optical aging caused by the surrounding environment. Therefore, aging resistance can be considered, for example, the electronic component's ability to withstand varying conditions such as humidity and temperature, or combinations thereof. The aging resistance of an electronic component can also be referred to as its aging performance.

[0019] Electrical aging can be determined by the increase in sheet resistance (SR) during accelerated aging conditions. Low sheet resistance can be considered an indicator of better electronic component performance, while high sheet resistance can be considered an indicator of poorer performance. Generally, an increase in sheet resistance of less than 10% is considered a good value for the aging performance of optoelectronic components. Sheet resistance can be measured using an Agilent digital multimeter with two silver contacts before and after the accelerated aging process using a four-point probe (by Jandel Engineering Limited). For each measurement, 18 30x30 mm cube samples can be used.

[0020] Optical aging can be assessed by changes in transmittance, haze, and / or yellowness index (b) during accelerated environmental conditions. * The transmittance, haze, and yellowness index are determined by changes in these parameters. Transmittance, haze, and yellowness index can be measured using a Hunterlab spectrometer according to standard ASTM D1003. Typically, for electronic components to pass testing, measurements of transmittance, haze, and yellowness index (b) should be achieved. * The value showed a small change before and after the accelerated environmental condition test.

[0021] Dopant complexes offer the added benefit that the dopant ionic components retain their dopant factor even when encapsulated within or coordinated with hydroxyl-containing polymers. In other words, the doping efficiency is not impaired by encapsulation.

[0022] In one embodiment, the dopant ion composition is a combination of metal trifluoromethanesulfonate, metal halide, and metal antimonate. In another embodiment, the dopant ion composition is a combination of metal trifluoromethanesulfonate and metal halide. In yet another embodiment, the dopant ion composition is a combination of metal trifluoromethanesulfonate and metal antimonate. In yet another embodiment, the dopant ion composition is a combination of metal halide and metal antimonate.

[0023] In one embodiment, the metal trifluoromethanesulfonate is copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, or any combination thereof. In another embodiment, the metal trifluoromethanesulfonate is copper trifluoromethanesulfonate or cerium trifluoromethanesulfonate, or a combination thereof.

[0024] In one embodiment, the metal halide is gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, ferric(III) chloride, antimony(V) chloride, or any combination thereof. In one embodiment, the metal halide is gold(III) chloride.

[0025] In one embodiment, the metal antimonate is sodium hexafluoroantimonate, silver hexafluoroantimonate, or any combination thereof. In another embodiment, the metal antimonate is silver hexafluoroantimonate.

[0026] In one embodiment, the dopant ion component is selected from copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, ferric(III) chloride, antimony(V) chloride, sodium hexafluoroantimonate, silver hexafluoroantimonate, or any combination thereof. In one embodiment, the dopant ion component is selected from copper trifluoromethanesulfonate or cerium trifluoromethanesulfonate, gold chloride, silver hexafluoroantimonate, or any combination thereof.

[0027] In one embodiment, the dopant ion composition is copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, ferric(III) chloride, antimony(V) chloride, sodium hexafluoroantimonate, or silver hexafluoroantimonate.

[0028] In one embodiment, the dopant ion component is selected from copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, gold chloride, silver hexafluoroantimonate, and any combination thereof. In another embodiment, the dopant ion component is copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, gold chloride, silver hexafluoroantimonate, or any combination thereof.

[0029] In one embodiment, the dopant ion composition is a combination of cerium trifluoromethanesulfonate and gold chloride.

[0030] In one embodiment, the dopant ion composition is a combination of copper trifluoromethanesulfonate and gold chloride.

[0031] Dopant complexes can be formed in a two-step process, during which the hydroxyl moiety of the polymer matrix reacts with the metallic moiety of the dopant ionic component. As an example only, the following illustrates the formation of a complex of a copolymer of polyvinylphenol and polymethyl methacrylate with copper(III) trifluoromethanesulfonate:

[0032] RO-H+Cu 2+ →CuOR + +H + (1)

[0033] RO-H+CuOR + →Cu-(OR)2+H + (2),

[0034] The encapsulation of dopant ions into the polymer copolymer occurs via the bonding of phenolic OH groups with divalent Cu ions.

[0035] The dopant complex can be generated by dissolving a dopant ionic component solution at a concentration of 1 mM to 5 mM (e.g., 2.5 mM) in a solvent or solvent mixture containing, for example, ethanol, isopropanol, acetone, acetic acid, or methyl isobutyl ketone. The polymer concentration used can be from 0.1% to 5%, for example, 1% or 0.5%. The concentration of the dopant ionic component is chosen such that the formed dopant layer does not reduce / decrease / affect the transparency of the transparent layer containing the transparent conductor material, and further, that the dopant layer does not cause discoloration of the transparent layer containing the transparent conductor material during extended aging test times under accelerated environmental aging.

[0036] In one embodiment, the dopant complex is formed from a dopant ionic component coordinated with the polymer matrix. In another embodiment, the dopant complex is formed from a dopant ionic component bonded or coupled to the polymer matrix.

[0037] In one embodiment, the weight ratio of the dopant ion component to the polymer matrix is ​​1:2 to 1:5, or 1:3 to 1:4.

[0038] Then, when a dopant layer composed of dopant complexes is formed on a transparent layer containing a transparent conductive material such as carbon nanotubes, charge transfer can occur between the positively charged carbon nanotubes (CNTs) and the negatively charged dopant complexes, thereby allowing the dopant complexes to bind to the carbon nanotubes, for example, through the following mechanisms:

[0039]

[0040] Encapsulating dopant ionic components within a polymer matrix has the added benefit of enabling the formation of dopant layers on transparent layers containing transparent conductive materials, where the dopant ionic components may not be freely present on the surface of the conductive material. As a result of encapsulation, the dopant ionic components are less likely to react with the surrounding environment, such as moisture or water (which would impair, for example, the electrical properties of the conductive material, thus enhancing its aging). Unbound by any particular theory, the high stability of the formed dopant complexes can be attributed to their hydrogen-bonding properties. For electronic components, the stability of the dopant layer and the prevention of component aging are desirable characteristics, as they can affect the electrical and optical properties of the electronic components.

[0041] Unless otherwise stated, the term "hydroxyl-containing polymer" in this specification should be understood to mean a polymer having at least one hydroxyl group, which is an entity having the formula OH. It contains oxygen atoms bonded to hydrogen. That is, a hydroxyl-containing polymer is a polymer having at least one hydroxyl group bonded to its structure.

[0042] In one embodiment, the hydroxyl-containing polymer is polyvinylphenol or a copolymer of polyvinylphenol and polymethyl methacrylate.

[0043] The negatively charged hydroxyl groups in hydroxyl-containing polymers can help accumulate positive ions. For example, the polar polyvinylphenol moiety in the polymer matrix can accelerate the binding of dopant ionic components on the polymer, thereby initiating dopant encapsulation. The hydroxyl groups can then be deprotonated upon reaction with water or moisture, retaining the negatively charged phenoxy anions on the carbon nanotube surface, which maintains the balance of dopant ionic components on the carbon nanotube surface. Furthermore, inserting, for example, less polar polymethyl methacrylate groups into polar polyvinylphenol polymers can inhibit water absorption and thus improve aging resistance.

[0044] A non-conductive base layer, a transparent layer containing a transparent conductive material, and a dopant layer may be stacked on top of each other in the vertical direction, such that the transparent layer containing the transparent conductive material is located between the non-conductive base layer and the dopant layer. Unless otherwise stated, the expression "on" another layer in this specification should be understood to mean that the layer is disposed on or above another layer, formed to be on or above another layer, or at least partially embedded therein. For example, the non-conductive base layer may be used as a carrier or support structure for the transparent layer containing the transparent conductive material and the dopant layer.

[0045] In one embodiment, a transparent layer comprising a transparent conductive material is in direct contact with a non-conductive base layer and a dopant layer.

[0046] In one embodiment, a non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material on or over the entire surface of the transparent layer containing the transparent conductive material. In one embodiment, a non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material on at least a portion of the surface of the transparent layer containing the transparent conductive material. In one embodiment, a non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material only on a portion of the surface of the transparent layer containing the transparent conductive material. For example, "freestanding regions" may be formed such that separate portions of the transparent layer containing the transparent conductive material are formed that are not in contact with the non-conductive base layer.

[0047] The term "comprising" is used in this specification to mean including the features or actions that follow it, without excluding the presence of one or more additional features or actions.

[0048] It will also be understood that a reference to a project refers to one or more of these projects.

[0049] Unless otherwise stated, the description of the base layer as "non-conductive" in this specification shall be understood to mean that the sheet resistance of the base layer is 10 megohms / square or higher.

[0050] Unless otherwise stated, the expression "transparent" in this specification should be understood to mean the optical transparency of the layer or portion thereof and the material within the relevant wavelength range in question. In other words, a "transparent" material or structure is one that allows light or general electromagnetic radiation to propagate through it at such relevant wavelengths. The relevant wavelength range may depend on the application using the layer or electronic components. In one embodiment, the relevant wavelength range is the visible wavelength range from about 390 nm to about 700 nm. In one embodiment, the relevant wavelength range is the infrared radiation wavelength range from about 700 nm to about 1000 nm.

[0051] Furthermore, the transparency of a layer or portion thereof primarily refers to its transparency in the thickness direction; therefore, in order to be "transparent," a sufficient portion of the light energy incident on the layer or portion thereof should propagate through it in the thickness direction. Such a sufficient portion can depend on the application in which the layer or electronic components are used. In one embodiment, the transmittance of the layer or portion thereof is between 20% and 99.99% of the energy of light incident perpendicularly thereon. In one embodiment, the transmittance is 20% or higher, or 30% or higher, or 40% or higher, or 50% or higher, or 60% or higher, or 70% or higher, or 80% or higher, or 90% or higher. Transmittance can be measured according to standards JIS-K7361 and ASTM D1003.

[0052] In one embodiment, the non-conductive base layer is a non-conductive, non-transparent base layer. In one embodiment, the non-conductive base layer is a non-conductive, transparent base layer. In one embodiment, the non-conductive base layer is translucent and / or opaque.

[0053] In one embodiment, the non-conductive base layer is made of a dielectric material. In one embodiment, the material used to form the non-conductive base layer should be suitable for use as a transparent layer containing a transparent conductive material and as a substrate for a dopant layer. In one embodiment, the non-conductive base layer comprises or is composed of a polymer or glass. In one embodiment, the non-conductive base layer is formed of a transparent plastic material. In one embodiment, the material of the non-conductive base layer is selected from polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), cyclic olefin polymer (COP), triacetate (TAC), cyclic olefin copolymer (COC), poly(vinyl chloride) (PVC), poly(2,6-naphthalenedicarboxylate) (PEN), polyimide (PI), polypropylene (PP), polyethylene (PE), and any combination thereof. In one embodiment, the material of the non-conductive base layer is selected from float glass (containing SiO2, Na2O, CaO, MgO), soda-lime glass, aluminosilicate glass, and borosilicate glass. However, the material of the non-conductive base layer is not limited to these examples.

[0054] In one embodiment, the thickness of the non-conductive base layer is 1 μm to 5000 μm, or 10 μm to 2000 μm, or 30 μm to 500 μm, or 50 μm to 300 μm. However, the non-conductive base layer can be thicker in some applications.

[0055] Transparent conductor materials can include any suitable, sufficiently transparent conductor material or any combination of such materials.

[0056] In one embodiment, the electronic component includes a transparent layer comprising or composed of a transparent conductive material. In another embodiment, the electronic component includes a transparent layer of a transparent conductive material.

[0057] In one embodiment, the transparent conductor material comprises or is composed of a conductive high aspect ratio molecular structure (HARMS) network or graphene. In another embodiment, the transparent conductor material comprises or is composed of graphene.

[0058] Conductive “HARMS” or “HARM structures” refer to conductive “nanostructures,” that is, structures with characteristic dimensions of one or more nanometers (i.e., less than or equal to about 100 nanometers). “High aspect ratio” refers to the significantly different sizes of the conductive structure in two perpendicular directions. For example, nanostructures can have lengths that are tens or hundreds of times larger than their thickness and / or width. In a HARMS network, a large number of these nanostructures interconnect each other to form a network of electrically interconnected molecules. As considered on a macroscopic scale, HARMS networks form solid, monolithic materials in which the individual molecular structures are either undirected or non-oriented (i.e., substantially randomly oriented) or oriented. Various types of HARMS networks can be produced in the form of thin, transparent layers with reasonable resistivity.

[0059] In one embodiment, the conductive HARM structure includes metal nanowires, such as silver nanowires.

[0060] In one embodiment, the conductive HARM network comprises carbon nanostructures. In one embodiment, the carbon nanostructures include carbon nanotubes, carbon nanobuds, carbon nanoribbons, or any combination thereof. In one embodiment, the carbon nanostructures include carbon nanobuds, i.e., carbon nanobud molecules. Carbon nanobuds or carbon nanobud molecules have fullerenes or fullerene-like molecules covalently bonded to the sides of tubular carbon molecules. Carbon nanostructures, especially carbon nanobuds, can provide advantages not only from an electrical, optical (transparency) perspective but also from a mechanical (robustness combined with flexibility and / or deformability) perspective.

[0061] The thickness of the transparent layer containing the transparent conductor material can be designed based on the properties of the transparent conductor material, particularly its resistivity or conductivity. For example, in the case of a transparent conductor material containing carbon nanostructures, the transparent layer can have a thickness of, for example, 1 nm to 1000 nm. In one embodiment, the thickness of the transparent layer containing the transparent conductor material is 0.1 nm to 1000 nm, or 10 nm to 100 nm, or 100 nm to 500 nm.

[0062] In one embodiment, the thickness of the dopant layer is 30 nm to 80 nm, or 100 nm to 200 nm.

[0063] The non-conductive base layer can be provided through an extrusion process and / or a casting process. The non-conductive base layer can be formed from at least two layers of different materials or layers of the same material. That is, the non-conductive base layer can be formed from, for example, extruded layers or coated layers stacked on top of each other.

[0064] Depending on the material comprising the transparent layer of the transparent conductor material, various processes existing in the art can be used to provide the transparent layer comprising the transparent conductor material. In the case of transparent conductor materials comprising carbon nanostructures such as carbon nanobud molecules, deposition can be performed, for example, by using known methods such as filtration from the gas phase or from the liquid phase, deposition in a force field, or deposition from the solution using spraying or spin drying. Carbon nanobud molecules can be synthesized, for example, using the methods disclosed in WO 2007 / 057501, and deposited onto the substrate, for example, directly from an aerosol stream with the assistance of, for example, electrophoresis or thermophoresis; or synthesized by the methods described in Nasibulin et al., “Multifunctional Free-Standing Single-Walled 20 Carbon Nanotube Films”, ACS NANO, Vol. 5, No. 4, 3214-3221, 2011.

[0065] In one embodiment, a transparent conductive material is formed or deposited on a non-conductive base layer in a predetermined pattern. In another embodiment, after the transparent conductive material is formed or deposited on the non-conductive base layer, a predetermined pattern is formed in the transparent layer. Various processes can be used in this patterning. In one embodiment, patterning is performed using laser processing, etching, direct printing, mechanical processing, combustion processing, or any combination thereof. In one embodiment, the laser processing is laser ablation. In one embodiment, the etching process is photolithography. In one embodiment, the pattern is formed simultaneously with or after the formation or deposition of the transparent layer containing the transparent conductive material on the non-conductive base layer.

[0066] In one embodiment, the transparent layer containing the transparent conductor material is at least partially covered with a dopant layer by using at least one of the following processes: dip coating, slot die coating, liquid surface coating, roll coating, screen printing, gravure coating, flexo coating, offset coating, knife coating, and physical vapor deposition.

[0067] In one embodiment, at least one metal contact pad is provided. In one embodiment, at least one metal contact pad is provided on a transparent layer comprising a transparent conductive material. In one embodiment, at least one metal contact pad is provided by using screen printing or inkjet printing. In one embodiment, at least one metal contact pad comprises silver, gold, copper, or any combination thereof.

[0068] The embodiments described above can be used in any combination with each other. Multiple embodiments can be combined together to form other embodiments. Dopant complexes, electronic components, or uses related to this application may include at least one of the embodiments described above. It will be understood that the benefits and advantages described herein may relate to one embodiment or may relate to multiple embodiments. The embodiments are not limited to any or all of the embodiments that solve the problems set forth or to having any or all of the benefits and advantages set forth. It will also be understood that references to items refer to one or more of those items. The term "comprising" is used in this specification to mean including the feature or action that follows it, without excluding the presence of one or more additional features or actions.

[0069] Because the conductive material is covered or protected by a dopant layer formed by dopant complexes, electronic components as described in this application have the additional benefit of improved aging resistance. The dopant complexes as described in this application have the additional benefit that the polymer matrix embeds the dopant ionic components, preventing them from freely existing on the surface of the transparent layer containing the transparent conductive material, thereby hindering their reaction with ambient humidity and moisture. Furthermore, the dopant complexes as described in this application have the additional benefit of reduced hygroscopicity and thus reduced reactivity of the dopant ionic components with moisture and humidity. The dopant complexes as described in this application have the additional benefit of exhibiting improved stability even at high temperatures, such as 120°C, for extended testing times, such as 2000 hours.

[0070] Example

[0071] The described implementation scheme will now be described in detail, examples of which are shown in the accompanying drawings.

[0072] The following detailed description discloses several embodiments that enable those skilled in the art to utilize doped complexes and electronic components based on this disclosure. Not all steps of the embodiments are discussed in detail, as many steps will be obvious to those skilled in the art based on this specification.

[0073] For the sake of simplicity, in the case of duplicate components, the item number will be retained in the following exemplary implementation.

[0074] Figure 1 A cross-sectional view of electronic component 1 according to one embodiment described in this specification is schematically shown. Figure 1As can be seen, electronic component 1 includes a non-conductive base layer 2, a transparent layer 3 containing a transparent conductive material, and a dopant layer 4. The non-conductive base layer 2, the transparent layer 3 containing the transparent conductive material, and the dopant layer 4 are stacked on top of each other in the vertical direction. The transparent layer 3 containing the transparent conductive material is located between the dopant layer 4 and the non-conductive base layer 2. The transparent layer 3 containing the transparent conductive material is in direct contact with the dopant layer 4 and the non-conductive base layer.

[0075] Example 1 - Production of Doped Complexes and Electronic Components

[0076] In this embodiment, different sensors were manufactured as electronic components. The sensors include a non-conductive base layer, a transparent layer containing a transparent conductive material, and a dopant layer.

[0077] The materials used in the production of dopant complexes and sensors are presented in the table below:

[0078]

[0079]

[0080] In addition, the comparative example was made by fabricating a similar sensor in other ways, but in which the dopant ion component was not encapsulated in the polymer matrix but was used as a bare dopant layer.

[0081] The materials used in the production of the comparison sensor are shown in the table below:

[0082]

[0083] First, the dopant layer is generated by a dopant complex, which is formed from a dopant ionic component encapsulated in a polymer matrix. The dopant ionic component used in this embodiment is silver hexafluoroantimonate, gold(III) chloride, cerium(III) chloride, or copper(II) chloride, and the polymer matrix is ​​a copolymer of polyvinylphenol and polymethyl methacrylate. In the comparative example, the dopant ionic component is not encapsulated in a polymer matrix.

[0084] The dopant complex was prepared by dissolving a 2.5 mM dopant ion component solution in a solvent mixture of acetone, acetic acid, and isopropanol in a ratio of 20:25:55. The polymer concentration used was 0.5%.

[0085] A transparent layer comprising a transparent conductive material (carbon nanobuds in this embodiment) is provided. The transparent layer is disposed on a non-conductive base layer, and then a dopant layer is disposed on the transparent layer comprising the transparent conductive material.

[0086] To evaluate the behavior of the formed sensors under varying climatic or environmental conditions (e.g., humidity and temperature), accelerated aging tests were performed, in which the sensors were aged in a laboratory setting at 85°C and 85% relative humidity (RH) for 100 hours. The apparatus used was a Weiss WKL 100 environmental chamber. The sheet resistance (ohms / square) of each of the sensors was measured. Sheet resistance measurements were performed after the sensors were subjected to accelerated aging, using an Agilent digital multimeter with two silver contacts before and after accelerated aging, and a four-point probe (by Jandel Engineering Limited) to measure the sheet resistance. For each measurement, 18 samples of 30x30 mm carbon nanotube sprout cubes were used. The results are shown in the table below:

[0087]

[0088] As can be seen from the table above, compared with sensors formed using bare dopant ionic components, sensors formed using dopant ionic components formulated with copolymers of polyvinylphenol and polymethyl methacrylate have a lower increase in sheet resistance and therefore greater resistance to aging.

[0089] Example 2 - Production of Dopant Complexes and Sensors

[0090] According to the process described in Example 1, additional sensors as shown in the table below were produced.

[0091] To evaluate the behavior of the formed sensor under varying conditions (such as humidity and temperature), accelerated aging tests were conducted, in which the sensor aging process was performed in a laboratory by maintaining the sensor at a temperature of 85°C and 85% relative humidity (RH) or at 120°C for 2000 hours. The apparatus used was an environmental chamber of model Espec SH-241 and a heating oven of model Memmert Universal oven UN30-1060.

[0092] The sheet resistance (ohms / square) of each sensor was measured. Sheet resistance measurements were performed after the sensors underwent accelerated aging. Using an Agilent digital multimeter with two silver contacts, a four-point probe (with Jandel Engineering Limited) was used to measure the sheet resistance before and after accelerated aging. For each measurement, 18 samples of 30x30mm CNB cubes were used. The results are shown in the table below:

[0093]

[0094]

[0095] As can be seen from the table above, compared with sensors formed using bare dopant ionic components, sensors formed using dopant ionic components that are combined with copolymers of polyvinylphenol and polymethyl methacrylate have lower sheet resistance and therefore greater resistance to aging.

[0096] Example 3 - Production of Doped Complexes and Electronic Components

[0097] In this embodiment, 5 mM copper trifluoromethanesulfonate and 1% of a copolymer of polyvinylphenol and polymethyl methacrylate (PVP-copolymer-PMMA) were mixed in a solvent mixture containing 100 ml acetone, 150 ml acetic acid, and 250 ml isopropanol. A coordination reaction caused the copper trifluoromethanesulfonate dopant ionic component to couple with the polymer matrix. The resulting dopant complex was obtained as a transparent dispersion.

[0098] An electronic component (in this embodiment, a sensor) is fabricated on a 250 μm polycarbonate substrate (as a non-conductive base layer) on which a layer of carbon nanobuds is deposited. A dopant layer is then dip-coated onto the top of the carbon nanobud layer. The dopant layer has a thickness of approximately 50 nm. An acrylic-based topcoat of approximately 400 nm is then deposited on top of the dopant layer.

[0099] The sensor measures a sheet resistance of 35 ohms / square. Optical values ​​of the sensor were measured before and after reliability testing. The results are presented in the table below:

[0100]

[0101]

[0102] As can be seen from the table above, the difference between the values ​​measured before and after reliability testing is quite small for the most advanced photoelectric sensors.

[0103] It will be apparent to those skilled in the art that, with advancements in technology, the basic concept can be implemented in various ways. Therefore, the embodiments are not limited to the above-described examples; rather, they may vary within the scope of the claims.

Claims

1. A dopant complex formed from a dopant ionic component encapsulated in a polymer matrix, wherein the dopant ionic component is a metal trifluoromethanesulfonate, the metal trifluoromethanesulfonate being copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, or any combination thereof, and the polymer matrix comprises or is composed of a hydroxyl-containing polymer, wherein the dopant complex is formed from the dopant ionic component coupled to the polymer matrix, and wherein the hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ionic component.

2. The dopant complex according to any one of the preceding claims, wherein the hydroxyl-containing polymer is polyvinylphenol or a copolymer of polyvinylphenol and polymethyl methacrylate.

3. An electronic component (1) comprising a transparent layer (3) containing a transparent conductive material in direct contact with a dopant layer (4), wherein the dopant layer is formed of a dopant complex, the dopant complex being formed of a dopant ionic component encapsulated in a polymer matrix, wherein the dopant ionic component is a metal trifluoromethanesulfonate, the metal trifluoromethanesulfonate being copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, or any combination thereof, and the polymer matrix comprising or composed of a hydroxyl-containing polymer, wherein the dopant complex is formed of the dopant ionic component coupled to the polymer matrix, and wherein the hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ionic component.

4. The electronic component according to claim 3, wherein the electronic component (1) further comprises a non-conductive base layer (2), wherein the non-conductive base layer, the transparent layer (3) comprising a transparent conductive material and the dopant layer (4) are arranged to be stacked on top of each other in a vertical direction such that the transparent layer comprising a transparent conductive material is located between the non-conductive base layer and the dopant layer.

5. The electronic component according to any one of claims 3 to 4, wherein the hydroxyl-containing polymer is polyvinylphenol or a copolymer of polyvinylphenol and polymethyl methacrylate.

6. The electronic component according to any one of claims 3 to 5, wherein the transparent conductor material comprises a conductive high aspect ratio molecular structure (HARMS) network or graphene, or is composed of a conductive high aspect ratio molecular structure (HARMS) network or graphene.

7. The electronic component according to any one of claims 3 to 6, wherein the electronic component is formable, flexible, foldable and / or stretchable, or wherein the electronic component is formable and / or stretchable, or wherein the electronic component is formable.

8. The electronic component according to any one of claims 3 to 7, wherein the electronic component is a touch sensor, a photovoltaic component, a heating component, a current conductor, a display component, a display electrode, an illumination component, a lamp switch, or a light control film.

9. Use of a dopant complex formed from a dopant ionic component encapsulated in a polymer matrix for improving the aging resistance of electronic components by covering a transparent layer comprising a transparent conductive material with a dopant layer formed from the dopant complex, the electronic component including the transparent layer comprising a transparent conductive material in direct contact with the dopant layer, wherein the dopant ionic component is a metal trifluoromethanesulfonate, the metal trifluoromethanesulfonate being copper trifluoromethanesulfonate, cerium trifluoromethanesulfonate, aluminum trifluoromethanesulfonate, holmium trifluoromethanesulfonate, terbium trifluoromethanesulfonate, nickel trifluoromethanesulfonate, hafnium trifluoromethanesulfonate, or any combination thereof, and the polymer matrix comprising or composed of a hydroxyl-containing polymer, wherein the dopant complex is formed from the dopant ionic component coupled to the polymer matrix, and wherein the hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ionic component.

10. Use of the dopant complex according to claim 9, wherein the electronic component further comprises a non-conductive base layer, wherein the non-conductive base layer (2), the transparent layer (3) comprising a transparent conductive material and the dopant layer (4) are arranged to be stacked on top of each other in a vertical direction such that the transparent layer comprising a transparent conductive material is located between the non-conductive base layer and the dopant layer and is in direct contact with the dopant layer.

11. The use according to any one of claims 9 to 10, wherein the hydroxyl-containing polymer is polyvinylphenol or a copolymer of polyvinylphenol and polymethyl methacrylate.

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