Method for inspecting resist pattern, method for manufacturing resist pattern, method for screening substrate, and method for manufacturing printed wiring board

Abstract

An inspection method of a resist pattern includes an appearance inspection process of appearance-inspecting a resist pattern from reflected light from a substrate on which the resist pattern is formed. A manufacturing method of a resist pattern includes a resist pattern forming process of forming a resist pattern on a substrate, and a color development process of developing the resist pattern after the resist pattern forming process. A substrate screening method includes an appearance inspection process of appearance-inspecting a resist pattern from reflected light from a substrate on which the resist pattern is formed, and an evaluation process of evaluating the resist pattern based on the appearance inspection in the appearance inspection process. A manufacturing method of a printed wiring board includes a conductor pattern forming process of etching or plating a substrate on which the evaluation of the resist pattern in the substrate screening method satisfies a criterion to form a conductor pattern.

Description

Technical Field

[0001] This invention relates to a method for inspecting resist patterns, a method for manufacturing resist patterns, a method for screening substrates, and a method for manufacturing printed circuit boards. Background Technology

[0002] In manufacturing printed circuit boards (PCBs), a photosensitive layer is first laminated onto a substrate. Next, active light is irradiated onto a predetermined portion of the photosensitive layer using a photomask to cure the exposed portion. After removing the support, the unexposed portions of the photosensitive layer are removed using a developer, thereby forming a resist pattern on the substrate. Then, using the formed resist pattern as a mask, etching or plating processes are performed on the substrate with the resist pattern to form a conductor pattern. Finally, the cured portion of the photosensitive layer (the resist pattern) is peeled off from the substrate.

[0003] In the manufacturing process of such printed circuit boards, if the exposure of active light is obstructed by foreign matter adhering to the photomask or photosensitive layer, defects may occur in the resist pattern, resulting in defects such as broken lines or short circuits in the conductor pattern. Therefore, in the past, defects such as broken lines or short circuits in the conductor pattern were detected by visual inspection of the conductor pattern.

[0004] Previous technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-207802 Summary of the Invention

[0007] The technical problem to be solved by the invention

[0008] By visually inspecting the resist pattern before the conductor pattern is formed, defects can be detected at an earlier stage in the printed circuit board manufacturing process. Furthermore, evaluating the yield of resist pattern formation can help improve resist pattern formation. Conventionally, visual inspection of the resist pattern has been performed using a scanning electron microscope (hereinafter also referred to as "SEM") (see, for example, Patent Document 1).

[0009] However, the inspection using SEM is to examine 1mm. 2 The area is extremely small, ranging from left to right. Therefore, inspecting the entire resist pattern on a printed circuit board using SEM is extremely time-consuming. Moreover, the accuracy of the inspection varies considerably depending on the inspector and the SEM used.

[0010] Therefore, the purpose of this invention is to provide a method for inspecting resist patterns, manufacturing resist patterns, screening substrates, and manufacturing printed circuit boards that can evaluate resist patterns with high accuracy in a short time.

[0011] means for solving technical problems

[0012] The method for inspecting resist patterns of the present invention includes a visual inspection step of visually inspecting the resist patterns based on reflected light from a substrate on which the resist patterns are formed.

[0013] In this method for inspecting resist patterns, the resist patterns are visually inspected based on reflected light from the substrate on which the resist patterns are formed. Therefore, compared with visual inspection using SEM, defects in the resist patterns can be detected with high accuracy in a short time.

[0014] In the visual inspection process, the outline of the resist pattern can be detected based on reflected light from the substrate, and the resist pattern can be visually inspected based on the detected outline. In this resist pattern inspection method, as a visual inspection of the resist pattern, the outline of the resist pattern detected based on reflected light from the substrate can be used to appropriately perform a visual inspection of the resist pattern.

[0015] In the visual inspection process, the detected contour can be compared with the pattern data used to form the resist pattern. In this resist pattern inspection method, as a visual inspection of the resist pattern, defects in the resist pattern can be detected with high precision by comparing the detected contour with the pattern data used to form the resist pattern.

[0016] In the visual inspection process, the line width of the resist pattern can be measured based on the detected contour. In this resist pattern inspection method, as a visual inspection of the resist pattern, the formation state of the resist pattern can be evaluated by measuring the line width of the resist pattern based on the detected contour.

[0017] The method may further include: a resist pattern forming process, in which a resist pattern is formed on a substrate; and a color development process, in which the resist pattern is developed after the resist pattern forming process. In this resist pattern inspection method, by developing the resist pattern after it has been formed on the substrate, the transmittance is reduced, thereby increasing the contrast between reflected light from the resist pattern and reflected light from areas outside the resist pattern. Therefore, the detection accuracy of the contour of the resist pattern, which is detected based on reflected light from the substrate, can be improved.

[0018] The resist pattern can be exposed during the color development process to develop its color. In this resist pattern inspection method, by exposing the resist pattern to develop its color, the detection accuracy of the contour of the resist pattern, which is detected based on reflected light from the substrate, can be improved.

[0019] The resist pattern can be heated during the color development process to develop its color. In this method for inspecting the resist pattern, heating the resist pattern to develop its color improves the accuracy of detecting the outline of the resist pattern based on reflected light from the substrate.

[0020] In the color development process, the temperature of the resist pattern can be set to 35°C or higher and 150°C or lower to develop the color. In this resist pattern inspection method, by setting the temperature of the resist pattern to 35°C or higher and 150°C or lower to develop the color, the detection accuracy of the contour of the resist pattern detected based on reflected light from the substrate can be improved.

[0021] The resist pattern can be dyed during the color development process to make the resist pattern develop color. In this resist pattern inspection method, by dyeing the resist pattern to make it develop color, the detection accuracy of the contour of the resist pattern, which is detected based on reflected light from the substrate, can be improved.

[0022] In the resist pattern forming process, a resist pattern containing a photosensitive color developer that reacts with light can be formed. In the resist pattern inspection method, by forming a resist pattern containing a photosensitive color developer that reacts with light, the resist pattern can be exposed to light to develop its color.

[0023] In the resist pattern formation process, a resist pattern with a thickness of 1 μm or more and 100 μm or less can be formed. In this resist pattern inspection method, by forming a resist pattern with a thickness of 1 μm or more and 100 μm or less, it is possible to prevent the resist pattern from becoming too thick, while increasing the contrast between reflected light from the resist pattern and reflected light from areas outside the resist pattern. Therefore, the detection accuracy of the resist pattern outline, which is detected based on reflected light from the substrate, can be improved.

[0024] The method for manufacturing resist patterns according to the present invention includes: a resist pattern forming step, forming a resist pattern on a substrate; and a color development step, developing the resist pattern after the resist pattern forming step.

[0025] In this method of manufacturing a resist pattern, by developing the resist pattern after it has been formed on the substrate, the contrast between reflected light from the resist pattern and reflected light from areas outside the resist pattern is increased. Therefore, for example, when detecting the outline of the resist pattern based on reflected light from the substrate on which the resist pattern is formed, detection accuracy can be improved. Furthermore, when measuring the linewidth of the resist pattern, it is easier to focus on the surface of the resist pattern or its outline.

[0026] The resist pattern can be exposed during the color development process to develop its color. In this method of manufacturing the resist pattern, by exposing the resist pattern to develop its color, the detection accuracy of the contour of the resist pattern, which is detected based on reflected light from the substrate, can be improved, for example.

[0027] The resist pattern can be heated during the color development process to develop its color. In this method of manufacturing the resist pattern, heating the resist pattern to develop its color can, for example, improve the detection accuracy of the outline of the resist pattern detected based on reflected light from the substrate.

[0028] In the color development process, the temperature of the resist pattern can be set to 35°C or higher and 150°C or lower to develop the color of the resist pattern. In this method of manufacturing the resist pattern, by setting the temperature of the resist pattern to 35°C or higher and 150°C or lower to develop the color of the resist pattern, the detection accuracy of the outline of the resist pattern detected based on reflected light from the substrate can be improved, for example.

[0029] The resist pattern can be dyed during the color development process to make the resist pattern develop color. In this method of manufacturing the resist pattern, by dyeing the resist pattern to make it develop color, the detection accuracy of the outline of the resist pattern, which is detected based on reflected light from the substrate, can be improved, for example.

[0030] In the resist pattern forming process, a resist pattern containing a photosensitive color developer that reacts with light can be formed. In this resist pattern manufacturing method, by forming a resist pattern containing a photosensitive color developer that reacts with light, the resist pattern can be exposed to light to develop color.

[0031] In the resist pattern forming process, a resist pattern with a thickness of 1 μm or more and 100 μm or less can be formed. In this resist pattern manufacturing method, by forming a resist pattern with a thickness of 1 μm or more and 100 μm or less, it is possible to prevent the resist pattern from becoming too thick, while simultaneously increasing the contrast between reflected light from the resist pattern and reflected light from areas outside the resist pattern. Therefore, for example, it is possible to improve the detection accuracy of the contour of the resist pattern when detected based on reflected light from the substrate.

[0032] The substrate screening method of the present invention includes: an appearance inspection step, which performs an appearance inspection of the resist pattern based on reflected light from the substrate on which the resist pattern is formed; and an evaluation step, which evaluates the resist pattern based on the appearance inspection in the appearance inspection step.

[0033] In this substrate screening method, the resist pattern is evaluated by visual inspection based on the reflected light from the substrate. Therefore, compared with visual inspection using SEM, substrates can be screened with high accuracy in a short time.

[0034] In the evaluation process, the resist pattern can be evaluated based on the number or shape of defects. In this substrate screening method, by evaluating the resist pattern based on the number or shape of defects, the substrate can be appropriately evaluated.

[0035] The method for manufacturing printed circuit boards according to the present invention includes a conductor pattern forming step of etching or plating a substrate whose resist pattern evaluation in the above-mentioned substrate screening method meets the criteria to form a conductor pattern.

[0036] In this printed circuit board manufacturing method, the substrate whose resist pattern evaluation in the above-mentioned substrate screening method meets the criteria is etched or plated to form a conductor pattern, thereby suppressing defects such as conductor pattern breakage or short circuit.

[0037] Invention Effects

[0038] According to the present invention, the corrosion-resistant pattern can be evaluated with high precision in a short time. Attached Figure Description

[0039] Figure 1 middle, Figure 1 (a) is a schematic perspective view illustrating the photosensitive layer formation process in the resist pattern formation process. Figure 1 (b) is a schematic perspective view illustrating the exposure process in the resist pattern formation process. Figure 1 (c) is a schematic perspective view used to illustrate the developing process in the resist pattern forming process.

[0040] Figure 2 middle, Figure 2 (a) Figure 2 (b) and Figure 2 (c) is a schematic perspective view illustrating the formation of a conductor pattern based on a resist pattern with defects.

[0041] Figure 3 It is a schematic three-dimensional diagram used to illustrate the visual inspection process.

[0042] Figure 4 This is a schematic diagram used to illustrate reflected light from a substrate.

[0043] Figure 5 It is a schematic diagram used to illustrate pattern data.

[0044] Figure 6 middle, Figure 6 (a) Figure 6 (b) and Figure 6 (c) is a schematic three-dimensional diagram used to illustrate the formation of conductor patterns. Detailed Implementation

[0045] Hereinafter, embodiments of the resist pattern inspection method, resist pattern manufacturing method, substrate screening method, and printed circuit board manufacturing method of the present invention will be described with reference to the accompanying drawings. Furthermore, in all figures, identical or equivalent parts are labeled with the same symbols. Moreover, "A or B" may include either A or B, or both.

[0046] [Inspection Method for Anti-corrosion Patterns]

[0047] The method for inspecting resist patterns according to the embodiments includes a visual inspection step of visually inspecting the resist pattern based on reflected light from a substrate on which the resist pattern is formed. The method for inspecting resist patterns may include a resist pattern forming step of forming the resist pattern on the substrate prior to the visual inspection step. Furthermore, the method for inspecting resist patterns may also include other steps. In this specification, the term "step" includes not only independent steps, but also steps that can be clearly distinguished from other steps, as long as the desired effect of the step can be achieved. The resist pattern is also referred to as a photocurable pattern of a photosensitive resin composition, or an embossed pattern.

[0048] <Resistant Pattern Forming Process>

[0049] like Figure 1 As shown, the resist pattern formation process includes a photosensitive layer formation process that laminates a photosensitive layer onto a substrate (see reference). Figure 1 (a) An exposure process in which a predetermined portion of the photosensitive layer is irradiated with active light to form a photocurable portion (see reference) Figure 1 (b) and the development process of the area other than the predetermined portion from which the photosensitive layer is removed from the substrate (see reference). Figure 1 (c) The resist pattern forming process may also include other processes as needed.

[0050] (Photosensitive layer formation process)

[0051] like Figure 1 As shown in (a), in the photosensitive layer formation process, a photosensitive layer 2 and a support 3 are formed on a substrate 1. The substrate 1, for example, includes an insulating layer 1a and a conductor layer 1b formed on the insulating layer 1a. The photosensitive layer 2 is formed on the conductor layer 1b of the substrate 1. The conductor layer 1b is, for example, electroless copper plating.

[0052] Photosensitive layer 2 is a layer formed using a photosensitive resin composition whose properties are altered by light irradiation (e.g., photocuring). The photosensitive resin composition forming photosensitive layer 2 may contain, for example, an adhesive polymer, a photopolymerizable compound, and a photopolymerization initiator. The photosensitive resin composition forming photosensitive layer 2 may also contain, as needed, photosensitizers, polymerization inhibitors, or other components. The photosensitive resin composition forming photosensitive layer 2 may contain, for example, dyes such as malachite green, Victoria pure blue, brilliant green, and methyl violet; photochromic agents such as tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline; heat-developing inhibitors; plasticizers such as p-toluenesulfonamide; pigments; fillers; defoamers; flame retardants; adhesion promoters; leveling agents; peel accelerators; antioxidants; fragrances; developers; and heat-crosslinking agents.

[0053] As the support 3, for example, a polymer film (support film) with heat resistance and solvent resistance, such as polyethylene terephthalate (PET) or other polyesters, polypropylene, polyethylene or other polyolefins, can be used.

[0054] One method for forming the photosensitive layer 2 and the support 3 on the substrate 1 is, for example, using a photosensitive element (not shown). The photosensitive element, for example, sequentially comprises a support, a photosensitive layer, and a protective layer. Furthermore, after removing the protective layer, the photosensitive layer of the photosensitive element is heated and pressed against the substrate 1, thereby forming the photosensitive layer 2 and the support 3 on the substrate 1. This yields a laminate 4 sequentially comprising the substrate 1, the photosensitive layer 2, the support 3, and a support film (not shown). Alternatively, an intermediate layer or the like can be disposed between the support 3 and the photosensitive layer 2.

[0055] (Exposure process)

[0056] like Figure 1 As shown in (b), in the exposure process, the photosensitive layer 2 is exposed to active light through the support 3. The exposed portion, irradiated with active light, is photocured, thereby forming the photocured portion 2a (latent image). Known exposure methods can be used, such as the method of irradiating active light in an image-like manner through a photomask 5 (mask exposure method), the LDI (Laser Direct Imaging) exposure method, or the method of irradiating an image-like manner through a lens using active light projecting an image of the photomask (projection exposure method), etc.

[0057] (Developing process)

[0058] like Figure 1 As shown in (c), in the developing process, the uncured portion 2b of the photosensitive layer 2 is removed from the substrate 1. By means of the developing process, a resist pattern 6 formed by the photocured portion 2a formed by photocuring the photosensitive layer 2 is formed on the substrate 1.

[0059] The thickness of the resist pattern 6 formed on the substrate 1 can be, for example, 1 μm or more, 3 μm or more, or 5 μm or more. Furthermore, the thickness of the resist pattern 6 formed on the substrate 1 can be, for example, 100 μm or less, 60 μm or less, or 40 μm or less. These minimum and maximum thicknesses of the resist pattern 6 can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 can be 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less. The thickness of the resist pattern 6 is its height relative to the substrate 1 in the direction perpendicular to the main surface of the substrate 1.

[0060] <Visual Inspection Procedure>

[0061] In the visual inspection process, the visual inspection of the resist pattern 6 is performed based on the reflected light from the substrate 1 on which the resist pattern 6 is formed.

[0062] In the above exposure process, if the exposure of active light is affected by foreign matter 7 adhering to the photomask 5, support 3, or photosensitive layer 2 (see reference), Figure 1 If the process is hindered by factors such as […], defects 8 may occur on the resist pattern 6. More specifically, for example… Figure 2 (a) Figure 2 (b) and Figure 2 As shown in (c), during the manufacturing of the printed circuit board, the conductor pattern 9 is formed by etching or plating the substrate 1 on which the resist pattern 6 is formed. Therefore, if there is a defect 8 on the resist pattern 6, defects such as broken lines or short circuits may occur on the conductor pattern 9 formed by etching or plating. Moreover, during the exposure process, the line width of the resist pattern 6 may become thicker or thinner depending on the exposure state of the active light.

[0063] Therefore, in the visual inspection process, the resist pattern 6 is visually inspected to detect defects before the conductor pattern is formed. In the visual inspection process, for example, the outline of the resist pattern 6 is detected based on reflected light from the substrate 1, and the resist pattern 6 is visually inspected based on the detected outline.

[0064] like Figure 3As shown, firstly, inspection light is emitted onto the substrate 1 on which the resist pattern 6 is formed, and reflected light from the substrate 1 is received. The wavelength of the inspection light can be set to, for example, 380 nm or more, 430 nm or more, or 600 nm or more. Furthermore, the wavelength of the inspection light can be set to, for example, 830 nm or less, 780 nm or less, or 700 nm or less. These minimum and maximum wavelength values ​​can be appropriately combined. For example, the wavelength of the inspection light can be set to 380 nm or more and 830 nm or less, 430 nm or more and 780 nm or less, or 600 nm or more and 700 nm or less. Alternatively, white light can be used as the inspection light, such as a laser excitation source. The light-receiving area of ​​the substrate 1 receiving the reflected light in the visual inspection process can be, for example, 1 cm. 2 Above and 2500cm 2 Below, 5cm 2 Above and 1200cm 2 Below, 25cm 2 Above and 600cm 2 The following describes the methods for examining the illumination of light, such as using either direct reflection or diffuse reflection, or a combination of both.

[0065] Next, as Figure 4 As shown, the outline 10 of the resist pattern 6 is determined based on the contrast between reflected light from the resist pattern 6 and reflected light from areas outside the resist pattern 6. For example, in the illuminated image of the reflected light, boundaries with increased contrast, such as brightness or chromaticity, are detected. These detected boundaries are then defined as the outline 10 of the resist pattern 6. The detection of the outline 10 of the resist pattern 6 based on reflected light from the substrate 1 is performed, for example, using an optical automated appearance inspection device (hereinafter also referred to as "AOI") such as the AOI Ultra Fusion 600 (manufactured by Orbotech Ltd., trade name).

[0066] For example, an inspection of the appearance of the resist pattern 6 may include checking for defects 8 in the resist pattern 6, checking the shape, position, size, etc. (hereinafter also referred to as "shape etc") of the defects 8 in the resist pattern 6, checking the shape of the resist pattern 6, or measuring the line width of the resist pattern 6.

[0067] In the inspection of whether there are defects 8 in the resist pattern 6, for example, such as Figure 4 and Figure 5As shown, the outline 10 of the resist pattern 6 detected based on reflected light from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming process. The pattern data 11 may be, for example, CAD data of the resist pattern 6. Then, the detected portions 10a of the outline 10 that differ from the pattern data 11 are identified as defects 8 in the resist pattern 6. The number of detected defects 8 is then calculated.

[0068] In the inspection of the shape, etc., of the defect 8 in the anti-corrosion pattern 6, for example, such as Figure 4 and Figure 5 As shown, the outline 10 of the resist pattern 6 detected based on reflected light from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming process. Then, the portion 10a of the detected outline 10 that differs from the pattern data 11 is identified as a defect 8 in the resist pattern 6. Subsequently, the shape, etc., of the detected defect 8 are inspected based on its outline.

[0069] In the inspection of the shape of the resist pattern 6, for example, as Figure 4 and Figure 5 As shown, the outline 10 of the resist pattern 6 detected based on reflected light from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming process. Then, the degree of difference between the shape of the resist pattern 6 and the pattern data 11 is examined.

[0070] In the inspection of measuring the line width of the resist pattern 6, for example, the line width of the resist pattern 6 is measured by measuring the interval of the outline 10 of the resist pattern 6 detected based on the reflected light from the substrate 1.

[0071] <Color Development Process>

[0072] The method for inspecting resist patterns according to the embodiments may include, as needed, a color development process to make the resist pattern 6 formed on the substrate 1 develop color. Here, color development refers not only to the situation where color appears from a colorless and transparent state, but also to the situation where the color becomes more intense from a state where color has already appeared. Intensified color refers, for example, to a decrease in light transmittance. The color development process may be performed, for example, after the resist pattern formation process and before the inspection process and the appearance inspection process. As a color development process, at least one of the following processes may be performed: exposure treatment, heat treatment, exposure and heat treatment, and dyeing treatment.

[0073] (Exposure processing)

[0074] In the exposure process, the resist pattern 6 is exposed to develop color. For example, in the resist pattern formation process, a resist pattern 6 containing a photochromic agent is first formed. The photochromic agent is a color developer that develops color through exposure (by reacting with light). The photochromic agent can be, for example, a color developer that develops color through exposure and heating, or a color developer that promotes color development by heating. The resist pattern 6 containing the photochromic agent is formed, for example, by containing the photochromic agent in the photosensitive layer 2. As such a photochromic agent, for example, tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline can be used. Subsequently, in the exposure process, the substrate 1 on which the resist pattern 6 is formed is exposed using active light. Thereby, the photochromic agent contained in the resist pattern 6 develops color. In the exposure process, for example, the resist pattern 6 is exposed such that the ratio of the transmittance of the inspection light emitted to the substrate 1 in the appearance inspection process to the transmittance of the resist pattern 6 after exposure to the exposure process is 98% or less, 96% or less, or 90% or less.

[0075] The wavelength range of the active light is, for example, the wavelength range in which the photochromic agent contained in the resist pattern 6 can develop color by irradiating the active light. The irradiation time of the active light depends on the output of the active light and the type of photochromic agent. For example, when the photochromic agent is leuco crystal violet, the energy (exposure) of the irradiated active light can be set to 0.5J or more, 1.0J or more, or 1.5J or more. Similarly, when the photochromic agent is leuco crystal violet, it can be set to 5.0J or less, 3.0J or less, or 2.5J or less. These minimum and maximum energy values ​​can be appropriately combined. For example, the energy of the irradiated active light can be set to 0.5J or more and 5.0J or less, 1.0J or more and 3.0J or less, or 1.5J or more and 2.5J or less.

[0076] (Heat treatment)

[0077] In the heat treatment, the resist pattern 6 is heated to develop color in the resist pattern 6. For example, the resist pattern 6 containing a thermal color developer is formed in the resist pattern forming process. The thermal color developer is a color developer that promotes color development by heating. The thermal color developer can be, for example, a color developer that develops color by heating, or a color developer that develops color by exposure and promotes color development by heating. The resist pattern 6 containing the thermal color developer is formed, for example, by containing the color developer in the photosensitive layer 2. As such a thermal color developer, for example, the same color developer as the photochromic color developer can be used. Subsequently, in the heat treatment, the substrate 1 on which the resist pattern 6 is formed is heated. Thereby, the thermal color developer contained in the resist pattern 6 develops color. In the heat treatment, for example, the resist pattern 6 is heated such that the ratio of the transmittance of the inspection light emitted to the substrate 1 in the appearance inspection process to the transmittance of the resist pattern 6 after heat treatment to the resist pattern 6 before heat treatment is 98% or less, 96% or less, or 90% or less.

[0078] During heat treatment, the temperature of the resist pattern 6 can be set to 35°C or higher, 50°C or higher, or 60°C or higher. Similarly, the temperature of the resist pattern 6 can be set to 150°C or lower, 120°C or lower, or 100°C or lower. These minimum and maximum temperatures can be appropriately combined. For example, the temperature of the resist pattern 6 can be set to 35°C or higher and 150°C or lower, 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower. Furthermore, if the ambient temperature around the substrate 1 is within these temperature ranges, no additional heat source needs to be prepared. The temperature of the resist pattern 6 can be the temperature of the resist pattern 6 itself, the temperature of the substrate 1 on which the resist pattern 6 is formed, or the temperature near the resist pattern 6. The temperature near the resist pattern 6 is, for example, the temperature at a location within 50cm, 30cm or 10cm of the resist pattern 6.

[0079] (Exposure and heat treatment)

[0080] In the exposure and heat treatment, the resist pattern 6 is exposed and heated to develop color. For example, in the resist pattern formation process, a resist pattern 6 containing a photothermal color developer is first formed. The photothermal color developer is a color developer that promotes color development through exposure and heating. For example, the photothermal color developer can be a color developer that develops color through exposure and promotes color development through heating. The resist pattern 6 containing the photothermal color developer is formed, for example, by containing the photothermal color developer in the photosensitive layer 2. As such a photothermal color developer, for example, the same color developer as a photochromic color developer can be used. Subsequently, in the exposure and heat treatment, the substrate 1 on which the resist pattern 6 is formed is exposed using active light and heated. Thereby, the photothermal color developer contained in the resist pattern 6 develops color. In the exposure and heat treatment, for example, the resist pattern 6 is exposed and heated, and in the appearance inspection process, the ratio of the transmittance of the inspection light emitted to the substrate 1 to the resist pattern 6 after exposure and heat treatment to the transmittance of the resist pattern 6 before exposure and heat treatment is 98% or less, 96% or less, or 90% or less.

[0081] The wavelength range of the active light is, for example, the wavelength range in which the photothermal color developer contained in the resist pattern 6 can develop color by irradiating the active light. The irradiation time of the active light depends on the output of the active light and the type of photothermal color developer. For example, when the photothermal color developer is leuco crystal violet, the energy (exposure) of the irradiated active light can be set to 0.5J or more, 1.0J or more, or 1.5J or more. Similarly, when the photothermal color developer is leuco crystal violet, it can be set to 5.0J or less, 3.0J or less, or 2.5J or less. These minimum and maximum energy values ​​can be appropriately combined. For example, the energy of the irradiated active light can be set to 0.5J or more and 5.0J or less, 1.0J or more and 3.0J or less, or 1.5J or more and 2.5J or less.

[0082] In the exposure heat treatment, for example, as a heat source for developing the color of the resist pattern 6, the temperature of the resist pattern 6 can be set to 35°C or higher, 50°C or higher, or 60°C or higher. Similarly, the temperature of the resist pattern 6 can be set to 150°C or lower, 120°C or lower, or 100°C or lower. These minimum and maximum temperatures can be appropriately combined. For example, the temperature of the resist pattern 6 can be set to 35°C or higher and 150°C or lower, or 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower. Furthermore, if the ambient temperature around the substrate 1 is within these temperature ranges, no additional heat source needs to be prepared. The temperature of the resist pattern 6 can be the temperature of the resist pattern 6 itself, the temperature of the substrate 1 on which the resist pattern 6 is formed, or the temperature near the resist pattern 6. The temperature near the resist pattern 6 is, for example, the temperature at a location within 50 cm, 30 cm or 10 cm of the resist pattern 6.

[0083] (Staining treatment)

[0084] In the dyeing process, the resist pattern 6 is dyed to make the resist pattern 6 visible. For example, the substrate 1 on which the resist pattern 6 is formed is immersed in a dyeing solution. As the dyeing solution, for example, resin dye SDN black (manufactured by Osaka Kasei Co., Ltd., trade name) can be used. At this time, the entire substrate 1 can be immersed in the dyeing solution, or a portion of the substrate 1 can be immersed in the dyeing solution in such a way that the entire resist pattern 6 is immersed. Moreover, for example, the dyeing solution can also be added dropwise to the substrate 1 on which the resist pattern 6 is formed. At this time, the dyeing solution can be added dropwise to the entire substrate 1, or a portion of the substrate 1 can be added dropwise to the entire resist pattern 6.

[0085] [Method for manufacturing anti-corrosion patterns]

[0086] The method for manufacturing a resist pattern according to the embodiment includes: a resist pattern forming step, forming a resist pattern 6 on a substrate 1; and a color development step, developing the resist pattern 6 in color after the resist pattern forming step. The resist pattern forming step in the resist pattern manufacturing method can, for example, be the same as the resist pattern forming step in the resist pattern inspection method described above. Furthermore, the color development step in the resist pattern manufacturing method can, for example, be the same as the color development step in the resist pattern inspection method described above. The resist pattern manufacturing method may include other steps.

[0087] [Substrate Selection Method]

[0088] The substrate screening method according to this embodiment includes: a visual inspection step, in which the resist pattern 6 is visually inspected based on reflected light from the substrate 1 on which the resist pattern 6 is formed; and an evaluation step, in which the resist pattern 6 is evaluated based on the visual inspection in the visual inspection step. The visual inspection step in the substrate screening method may, for example, be the same as the visual inspection step in the resist pattern inspection method described above. The substrate screening method may include other steps.

[0089] <Evaluation Process>

[0090] In the evaluation process, the anti-corrosion pattern 6 is evaluated based on a predetermined benchmark.

[0091] For example, if a visual inspection is performed in the visual inspection process to check for defects 8 in the resist pattern 6, the resist pattern 6 is evaluated in the evaluation process based on the number of defects 8. For example, in the evaluation process, if the number of defects 8 in the resist pattern 6 is less than a predetermined benchmark number, it is evaluated as good; if the number of defects 8 in the resist pattern 6 is more than the predetermined benchmark number, it is evaluated as poor.

[0092] Furthermore, for example, if the shape of the defect 8 in the resist pattern 6 is inspected during the visual inspection process, the resist pattern 6 is evaluated during the evaluation process based on the size of the defect 8. For example, if the shape of the defect 8 in the resist pattern 6 is within a predetermined allowable range, it is evaluated as good; if the shape of the defect 8 in the resist pattern 6 is outside the predetermined allowable range, it is evaluated as poor.

[0093] Furthermore, if the shape of the resist pattern 6 is inspected during the visual inspection process, the resist pattern 6 is evaluated based on its shape during the evaluation process. For example, if the difference between the shape of the resist pattern 6 and the pattern data 11 is within a predetermined tolerance range, it is considered good; if the difference between the shape of the resist pattern 6 and the pattern data 11 is outside the predetermined tolerance range, it is considered bad.

[0094] Furthermore, if, for example, the line width of the resist pattern 6 is measured during the visual inspection process, the resist pattern 6 is evaluated based on its line width during the evaluation process. For instance, in the evaluation process, if the line width of the resist pattern 6 is within a predetermined reference range, it is evaluated as good; if the line width of the resist pattern 6 is outside the predetermined reference range, it is evaluated as poor.

[0095] [Manufacturing methods for printed circuit boards]

[0096] The printed circuit board manufacturing method according to this embodiment includes a conductor pattern forming step, which involves etching or plating a substrate whose resist pattern evaluation meets the criteria in the substrate screening method to form a conductor pattern. That is, in the conductor pattern forming step, substrates whose resist pattern evaluation does not meet the criteria in the substrate screening method are not etched or plating processed to form a conductor pattern. The printed circuit board manufacturing method according to this embodiment may include other steps, such as a resist pattern removal step, as needed.

[0097] In the etching process, the resist pattern formed on the substrate with the conductor layer is used as a mask to etch away the conductor layer of the substrate that is not covered by the resist. After the etching process, the resist is removed by removing the resist pattern 6 to form the conductor pattern.

[0098] like Figure 6 As shown in (a), in the plating process, the resist pattern 6 formed on the substrate 1 having the conductor layer 1b is used as a mask to plate copper or solder, etc., onto the conductor layer 1b of the substrate 1 that is not covered by the resist. After the plating process, as... Figure 6 As shown in (b), the resist is removed by removing the resist pattern 6, and as... Figure 6 As shown in (c), the conductor layer 1b covered by the resist is etched to form a conductor pattern 9. The plating process can be electroplating or electroless plating, wherein electroplating is permitted.

[0099] As described above, in the resist pattern inspection method of this embodiment, the resist pattern 6 is visually inspected based on reflected light from the substrate 1 on which the resist pattern 6 is formed. Therefore, compared with visual inspection using SEM, defects 8 in the resist pattern 6 can be detected with high accuracy in a short time.

[0100] Furthermore, in this method for inspecting resist patterns, as an appearance inspection of the resist pattern 6, the outline 10 of the resist pattern 6, which is detected based on the reflected light from the substrate 1, is used to perform an appropriate appearance inspection of the resist pattern 6.

[0101] Furthermore, in this method for inspecting the resist pattern, as an appearance inspection of the resist pattern 6, the detected contour 10 is compared with the pattern data 11 used to form the resist pattern 6, thereby enabling the detection of defects 8 in the resist pattern 6 with high precision.

[0102] Furthermore, in this method for inspecting the resist pattern, as an appearance inspection of the resist pattern 6, the line width of the resist pattern 6 is measured based on the detected contour 10, thereby enabling the evaluation of the formation state of the resist pattern 6.

[0103] Furthermore, in this method for inspecting resist patterns, the transmittance is reduced by making the resist pattern 6 colored after it is formed on the substrate 1. As a result, the contrast between the reflected light from the resist pattern 6 and the reflected light from areas other than the resist pattern 6 is increased. Therefore, the detection accuracy of the outline 10 of the resist pattern 6, which is detected based on the reflected light from the substrate 1, can be improved.

[0104] Furthermore, in this method for inspecting resist patterns, the resist pattern 6 is exposed to make the resist pattern 6 colored, thereby improving the detection accuracy of the outline 10 of the resist pattern 6 which is detected based on reflected light from the substrate 1.

[0105] Furthermore, in this method for inspecting resist patterns, the resist pattern 6 is heated to make the resist pattern 6 develop color, thereby improving the detection accuracy of the outline 10 of the resist pattern 6 which is detected based on reflected light from the substrate 1.

[0106] Furthermore, in this method for inspecting resist patterns, the temperature of the resist pattern 6 is set to 35°C or higher and 150°C or lower, 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower to make the resist pattern 6 develop color, thereby improving the detection accuracy of the outline 10 of the resist pattern 6 when detected based on reflected light from the substrate 1.

[0107] Furthermore, in this method for inspecting resist patterns, the resist pattern 6 is stained to make it colorimetric, thereby improving the detection accuracy of the outline 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1.

[0108] Furthermore, in this method for inspecting resist patterns, a resist pattern 6 containing a photochromic agent that reacts with light to develop color is formed, thereby enabling the resist pattern 6 to develop color by exposing it to light.

[0109] The thicker the resist pattern 6 becomes, the more the reflected light from the resist pattern 6 attenuates and the darker it becomes. That is, the thicker the resist pattern 6 becomes, the greater the contrast between the reflected light from the resist pattern 6 and the reflected light from areas outside the resist pattern 6. Therefore, from the viewpoint of increasing the contrast between the reflected light from the resist pattern 6 and the reflected light from areas outside the resist pattern 6, the thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 1 μm or more, 3 μm or more, or 5 μm or more. Furthermore, the thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 100 μm or less, 60 μm or less, or 40 μm or less. These minimum and maximum values ​​of the photosensitive layer 2 thickness can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 can be set to 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less.

[0110] In this method for inspecting resist patterns, a resist pattern 6 with a thickness of 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less is formed. This prevents the resist pattern 6 from becoming too thick and increases the contrast between reflected light from the resist pattern 6 and reflected light from areas outside the resist pattern 6. Therefore, the detection accuracy of the contour 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1, can be improved.

[0111] In the method for manufacturing the resist pattern according to this embodiment, after the resist pattern 6 is formed on the substrate 1, the resist pattern 6 is colored, thereby increasing the contrast between the reflected light from the resist pattern 6 and the reflected light from areas other than the resist pattern 6. Therefore, for example, when detecting the outline 10 of the resist pattern 6 based on the reflected light from the substrate 1 on which the resist pattern 6 is formed, the detection accuracy can be improved. Moreover, when measuring the linewidth of the resist pattern 6, it is easier to focus on the surface of the resist pattern 6 or the outline of the resist pattern 6.

[0112] Furthermore, in this method of manufacturing the resist pattern, the resist pattern 6 is exposed to make the resist pattern 6 colored, thereby improving, for example, the detection accuracy of the outline 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1.

[0113] Furthermore, in this method of manufacturing the resist pattern, the resist pattern 6 is heated to make the resist pattern 6 develop color, thereby improving, for example, the detection accuracy of the outline 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1.

[0114] Furthermore, in the method for manufacturing the resist pattern, the temperature of the resist pattern 6 is set to 35°C or higher and 150°C or lower, 50°C or higher and 120°C or lower, or 60°C or higher and 100°C or lower to make the resist pattern 6 develop color, thereby improving, for example, the detection accuracy of the outline 10 of the resist pattern 6 detected based on reflected light from the substrate 1.

[0115] Furthermore, in this method of manufacturing the resist pattern, the resist pattern 6 is dyed to make the resist pattern 6 colored, thereby improving, for example, the detection accuracy of the outline 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1.

[0116] Furthermore, in the method for manufacturing the resist pattern, a resist pattern 6 containing a photochromic agent that reacts with light to develop color is formed, thereby enabling the resist pattern 6 to develop color by exposing it to light.

[0117] Furthermore, in this method of manufacturing the resist pattern, a resist pattern 6 with a thickness of 1 μm or more and 100 μm or less, 3 μm or more and 60 μm or less, or 5 μm or more and 40 μm or less is formed. This prevents the resist pattern 6 from becoming too thick and increases the contrast between reflected light from the resist pattern 6 and reflected light from areas outside the resist pattern 6. Therefore, for example, the detection accuracy of the contour 10 of the resist pattern 6, which is detected based on reflected light from the substrate 1, can be improved.

[0118] In the substrate screening method of this embodiment, the resist pattern 6 is evaluated by visual inspection based on the reflected light from the substrate 1. Therefore, compared with visual inspection using SEM, the substrate 1 can be screened with high accuracy in a short time.

[0119] Furthermore, in this substrate screening method, the substrate 1 is evaluated based on the number or shape of defects in the resist pattern 6, thereby enabling appropriate evaluation of the substrate 1.

[0120] In the printed circuit board manufacturing method of this embodiment, the substrate 1 that meets the evaluation criteria of the resist pattern 6 in the above-mentioned substrate screening method is etched or plated to form the conductor pattern 9, thereby suppressing defects such as broken lines or short circuits in the conductor pattern 9.

[0121] This invention is not limited to the above-described embodiments, and appropriate modifications can be made without departing from the spirit of this invention.

[0122] Example

[0123] Next, embodiments of the present invention will be described. However, the present invention is not limited to the following embodiments.

[0124] 1. Photosensitive elements and substrates

[0125] In Examples 1-12 and Comparative Example 1, the photosensitive elements and substrates shown in Table 1 and below were used. Additionally, the last two digits of the trade name of the photosensitive element indicate the film thickness of the photosensitive layer (unit: μm).

[0126] (Photosensitive element)

[0127] F-1: RY-5115 (manufactured by Showa Denko Materials Co., Ltd., trade name)

[0128] F-2: RY-5125 (manufactured by Showa Denko Materials Co., Ltd., trade name, photosensitive layer composition is the same as (F-1))

[0129] F-3: FL-7225 (manufactured by Showa Denko Materials Co., Ltd., trade name)

[0130] F-4: ME-3606SG (manufactured by Showa Denko Materials Co., Ltd., trade name)

[0131] F-5: A photosensitive element manufactured by using 10 times the amount of MKG (malachite green) from RY-5115 (manufactured by Showa Denko Materials Co., Ltd., trade name).

[0132] (Substrate)

[0133] S-1: Cu sputtered PET film (manufactured by GEOMATEC Co., Ltd., thickness: 125μm, Ra<50nm)

[0134] S-2: GL-102 (manufactured by Ajinomoto Fine-Techno Co., Inc., trade name, Ra: approx. 100nm)

[0135] S-3: MCL-E67 (manufactured by Showa Denko Materials Co., Ltd., trade name, Ra: approximately 300nm)

[0136] 2. Fabrication of Layered Bodies

[0137] In Examples 1-5, 7, and 8-11, S-1, stored under dehumidification conditions, was used as a substrate having a copper layer as a conductive layer. In Examples 6, 8, and Comparative Example 1, the substrate having a copper layer as a conductive layer was acid-washed and water-washed, dried with airflow, and then heated to 80°C. Subsequently, in Examples 1-12 and Comparative Example 1, a photosensitive element was laminated (stacked) onto the surface of the copper layer of the substrate. While peeling off the protective layer of the photosensitive element to bring the photosensitive layer of the photosensitive element into contact with the surface of the copper layer of the substrate, lamination was performed using a 110°C hot roller at a pressing pressure of 0.4 MPa and a roller speed of 1.0 m / min. Thus, laminates of Examples 1-12 and Comparative Example 1, in which a substrate, a photosensitive layer, and a support are sequentially stacked, were obtained. The obtained laminates were used as test pieces for the tests shown below.

[0138] 3. Fabrication of the pattern substrate

[0139] [Examples 1-7, 9-12 and Comparative Example 1]

[0140] A glass-chrome type photomask (for resolution evaluation or pattern inspection) was used, and the photosensitive layer was exposed (exposure processing) at a predetermined energy using a projection exposure apparatus (manufactured by Ushio Inc., trade name "UX-2240SM") with an ultra-high pressure mercury lamp (365nm) as the light source. Furthermore, the photomask for resolution evaluation used a photomask with a linewidth / spacing width of x / x (x: 1~30, unit: μm), and the photomask for pattern inspection used a photomask with a linewidth / spacing width of x / x (x: 10, 15, 20, unit: μm) (pattern area: 90mm × 90mm).

[0141] After exposure, the support is peeled off to expose the photosensitive layer. A 1% sodium carbonate aqueous solution at 30°C is sprayed for twice the shortest development time (the shortest time to remove unexposed portions) to remove the unexposed portions (development treatment). The substrate after development treatment, exposed using a resolution evaluation photomask, is called a resolution evaluation pattern substrate, and the substrate after development treatment, exposed using a pattern inspection photomask, is called an inspection pattern substrate. In the resolution evaluation pattern substrate, the resolution is evaluated based on the minimum linewidth / space width value in the resist pattern formed where the spacer portions (unexposed portions) are cleanly removed and the line portions (exposed portions) do not exhibit distortion, meandering, or defects.

[0142] [Example 8]

[0143] The photosensitive layer was exposed using a direct-image exposure apparatus (manufactured by Orbotech Ltd., trade name "Nuvogo Fine 8") that uses a semiconductor laser (a mixed line of 375nm and 405nm, with the wavelength ratio arbitrarily adjustable (375nm:405nm = 0:100 to 100:0)) as the light source, at a predetermined energy. After exposure, the photosensitive layer was developed using the same procedures as in Examples 1-7, 9-10, and Comparative Example 1 to produce a patterned substrate for resolution evaluation and a patterned substrate for inspection.

[0144] 4. Coloring process

[0145] The following processing was performed using a patterned substrate for inspection.

[0146] [Example 1]

[0147] A 300ml solution (25°C) of SDN Black resin dye (manufactured by Osaka Kasei Co., Ltd., trade name) diluted 20 times with water was prepared and filled into a stainless steel dish with an outer diameter of 20×25×5cm. The developed substrate was immersed in the solution, and staining was performed for 3 hours while gently moving the substrate slightly. After the predetermined time, the substrate was removed, rinsed with water, and dried.

[0148] [Example 2]

[0149] The entire developed substrate was exposed to approximately 2.0 J using a parallel exposure machine (manufactured by ORC MANUFACTURING CO.,LTD., trade name "EXM-1201", 365nm and 405nm mixed line). The temperature near the substrate surface during exposure was 31°C.

[0150] [Examples 3-9]

[0151] A large UV irradiation apparatus (manufactured by ORC MANUFACTURING CO.,LTD., trade name "QRM-2317-F-00") was used to expose the developed substrate by conveying it along a conveyor belt at a speed of approximately 0.5 J per exposure. In Example 3, one exposure was performed with an exposure amount of 0.5 J. The temperature near the substrate surface during exposure in Example 3 was 35°C. In Examples 4, 6-8, two exposures were performed, with a total exposure amount of 1 J. The temperature near the substrate surface during exposure in Examples 4, 6-8 was 50°C. In Examples 5 and 9, three exposures were performed, with a total exposure amount of 1.5 J. The temperature near the substrate surface during exposure in Example 5 was 35°C. The temperature near the substrate surface during exposure in Examples 5 and 9 was 62°C.

[0152] 5. Transmittance measurement (after coloring treatment)

[0153] The photosensitive element of F-1 was laminated onto the surface of a glass slide (manufactured by Matsunami Glass Ind., Ltd., trade name "White Glass Slide Cut No. 1S1126"). While peeling off the protective layer to bring the photosensitive layer of the photosensitive element into contact with the slide surface, lamination was performed using a 110°C hot roller at a pressing pressure of 0.2 MPa and a roller speed of 1.0 m / min. After the photosensitive layer was laminated onto the glass slide, exposure and coloring processes were performed under the same conditions as when fabricating the patterned substrate. The support was then peeled off to produce a sample for transmittance measurement. The absorbance of the photosensitive layer was measured using a U-3310 spectrophotometer (manufactured by Hitachi High-Tech Science Corporation, measurement conditions: wavelength range: 330–700 nm, scan speed: 300 nm / min, scan interval: 0.50 nm). Baseline measurements were performed using an untreated glass slide as both a reference and a sample. The absorbance of the test light at the wavelength (635 nm) was recorded based on the obtained measurement spectrum, and the transmittance of the test light was calculated.

[0154] 6. Visual inspection of the anti-corrosion pattern

[0155] In Examples 1-12, defects in the resist patterns were detected using an AOI Ultra Fusion 600 (manufactured by Orbotech Ltd., trade name) for visual inspection. The panel polarity was set to negative, the light intensity was set to positive reflection: 120, diffuse reflection: 60, and only red light was used. In Comparative Example 1, defects in the resist patterns were observed using a SEM with a SU-1500 (manufactured by Hitachi High-Tech Corporation, trade name). The accelerating voltage was set to 15kV, and the current was set to 10μA. Subsequently, the visual inspection time was evaluated for Examples 1-12 and Comparative Example 1, and the pattern detection rate of resist pattern defects was evaluated for Examples 1-12. The pattern detection rate refers to the probability that the inspection device successfully identifies the outline of the resist pattern during visual inspection. That is, before performing visual inspection, the inspection device is used to set appropriate gray levels (thresholds for light and dark binarization) corresponding to Examples 1-12 respectively. If the setting is completed, it is OK; if the setting is not completed and an error occurs, it is NG. Subsequently, in evaluating the pattern detection rate of defects in the resist pattern, cases where all are OK are designated as A, cases where the probability of NG is low even if not always OK are designated as B, and cases where the probability of NG is high are designated as C. In evaluating the visual inspection time, a time of less than 10 minutes / cm is considered acceptable. 2 Let A be the value, and let 10 points / cm be the value.2 Above and below 5000 points / 100cm 2 Let's set it as B, and calculate 5000 points / 100cm. 2 The above is set as C.

[0156] [Table 1]

[0157]

[0158] 7. Evaluation

[0159] As shown in Table 1, in Examples 1 to 12, the inspection time was significantly shortened compared to Comparative Example 1. This result indicates that by visually inspecting the resist pattern using reflected light from the substrate with the resist pattern, defects in the resist pattern can be detected in a shorter time compared to visual inspection using SEM.

[0160] Furthermore, in Examples 1-10, the pattern detection rate was higher compared to Examples 11-12. This result indicates that in the visual inspection of resist patterns based on reflected light from a substrate with a resist pattern, the outline of the resist pattern is easily detected by making the resist pattern visible, thereby improving inspection accuracy.

[0161] Symbol Explanation

[0162] 1-Substrate, 1a-Insulating layer, 1b-Conductive layer, 2-Photosensitive layer, 2a-Cureable part, 2b-Uncured part, 3-Support, 4-Laminated body, 5-Photomask, 6-Resist pattern, 7-Foreign matter, 8-Defect, 9-Conductor pattern, 10-Outline, 11-Pattern data.

Claims

1. A method for inspecting resist patterns, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process, following the resist pattern formation process, develops the color of the resist pattern; and The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The resist pattern is exposed during the color development process to make the resist pattern develop color.

2. A method for inspecting resist patterns, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process, following the resist pattern formation process, develops the color of the resist pattern; and The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. In the color development process, the resist pattern is heated to develop its color.

3. A method for inspecting resist patterns, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process, following the resist pattern formation process, develops the color of the resist pattern; and The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. In the color development process, the temperature of the resist pattern is set to above 35°C and below 150°C to make the resist pattern develop color.

4. A method for inspecting resist patterns, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process, following the resist pattern formation process, develops the color of the resist pattern; and The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The resist pattern is formed in the resist pattern forming process by forming a photochromic agent that reacts with light to develop color.

5. The method for inspecting the resist pattern according to any one of claims 1 to 4, wherein, In the visual inspection process, the outline of the resist pattern is detected based on the reflected light from the substrate, and the visual inspection of the resist pattern is performed based on the detected outline.

6. The method for inspecting resist patterns according to claim 5, wherein, In the visual inspection process, the detected contour is compared with the pattern data used to form the corrosion-resistant pattern.

7. The method for inspecting resist patterns according to claim 5, wherein, In the visual inspection process, the line width of the resist pattern is measured based on the detected contour.

8. The method for inspecting the resist pattern according to any one of claims 1 to 4, wherein, In the color development process, the resist pattern is dyed to make the resist pattern develop color.

9. The method for inspecting the resist pattern according to any one of claims 1 to 4, wherein, The resist pattern is formed in the resist pattern forming process with a thickness of 1 μm or more and 100 μm or less.

10. A method for manufacturing a resist pattern, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; and The color development process, which occurs after the resist pattern formation process, develops the color of the resist pattern. The resist pattern is exposed during the color development process to make the resist pattern develop color.

11. A method for manufacturing a resist pattern, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; and The color development process, which occurs after the resist pattern formation process, develops the color of the resist pattern. The resist pattern is formed in the resist pattern forming process by forming a photochromic agent that reacts with light to develop color.

12. The method for manufacturing the resist pattern according to claim 10 or 11, wherein, In the color development process, the resist pattern is heated to develop its color.

13. The method for manufacturing the resist pattern according to claim 10 or 11, wherein, In the color development process, the temperature of the resist pattern is set to above 35°C and below 150°C to make the resist pattern develop color.

14. The method for manufacturing the resist pattern according to claim 10 or 11, wherein, The resist pattern is formed in the resist pattern forming process with a thickness of 1 μm or more and 100 μm or less.

15. A substrate screening method, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process is performed after the resist pattern formation process to develop the color of the resist pattern; The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The evaluation process involves evaluating the corrosion-resistant pattern based on the visual inspection performed in the visual inspection process. The resist pattern is exposed during the color development process to make the resist pattern develop color.

16. A substrate screening method, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process is performed after the resist pattern formation process to develop the color of the resist pattern; The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The evaluation process involves evaluating the corrosion-resistant pattern based on the visual inspection performed in the visual inspection process. In the color development process, the resist pattern is heated to develop its color.

17. A substrate screening method, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process is performed after the resist pattern formation process to develop the color of the resist pattern; The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The evaluation process involves evaluating the corrosion-resistant pattern based on the visual inspection performed in the visual inspection process. In the color development process, the temperature of the resist pattern is set to above 35°C and below 150°C to make the resist pattern develop color.

18. A substrate screening method, the method comprising: The resist pattern forming process forms a resist pattern on the substrate; The color development process is performed after the resist pattern formation process to develop the color of the resist pattern; The visual inspection process involves visually inspecting the resist pattern based on reflected light from the substrate on which the resist pattern is formed. The evaluation process involves evaluating the corrosion-resistant pattern based on the visual inspection performed in the visual inspection process. The resist pattern is formed in the resist pattern forming process by forming a photochromic agent that reacts with light to develop color.

19. The substrate screening method according to any one of claims 15 to 18, wherein, In the evaluation process, the anti-corrosion pattern is evaluated based on the number or shape of defects in the anti-corrosion pattern.

20. A method for manufacturing a printed circuit board, the method comprising a conductor pattern forming step of etching or plating a substrate in which the evaluation criteria of the resist pattern in the substrate screening method of any one of claims 15 to 19 are satisfied to form a conductor pattern.

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