A system and method for testing gallium nitride device displacement damage rating
By testing and comparing the electrical performance of gallium nitride devices before and after proton irradiation, the displacement damage level was determined, which solved the problem of performance degradation after irradiation, enabling predictive and regular maintenance, and protecting device performance and lifespan.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI INNOSYS TECH CO LTD
- Filing Date
- 2023-07-03
- Publication Date
- 2026-07-28
AI Technical Summary
Gallium nitride devices suffer displacement damage after neutron irradiation, affecting device performance and lifespan. Existing technologies make it difficult to effectively assess and predict the extent of damage.
Electrical performance tests were performed on gallium nitride devices that were not irradiated with protons. The devices were then connected to a PCB test board and irradiated with protons. The electrical performance results before and after proton irradiation were compared. A laser collimator was used to align with the center of the target chamber to generate dual-cycle test results. The displacement damage level was determined by combining the results with preset reference values.
Effectively assess the degree of displacement damage to gallium nitride devices, predict damage in advance, avoid affecting efficiency and lifespan, and enable regular maintenance to preserve device performance.
Smart Images
Figure CN116754917B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of gallium nitride device testing technology, specifically to a system and method for testing the displacement damage level of gallium nitride devices. Background Technology
[0002] Gallium nitride (GaN) is a third-generation wide-bandgap semiconductor with advantages such as wide bandgap, high breakdown electric field, high saturation electron velocity, high thermal conductivity, stable chemical properties, and strong radiation resistance. It is one of the preferred materials for high-temperature, high-frequency, and high-power microwave devices. Therefore, GaN-based electronic devices have important applications in radiation service environments such as national defense, space, and aerospace. However, semiconductor materials in electronic devices suffer significant displacement damage after neutron irradiation, which affects device performance, reduces efficiency, and shortens lifespan.
[0003] Therefore, it does not meet the existing requirements, so we propose a gallium nitride device displacement damage level testing system and method. Summary of the Invention
[0004] The purpose of this invention is to provide a system and method for testing the displacement damage level of gallium nitride (GaN) devices. The system involves testing the electrical performance of an un-proton-irradiated GaN device, then connecting the GaN device to a PCB test board and using a laser collimator to align the target chamber center with the GaN device under test for proton irradiation. The system then tests the electrical performance of the proton-irradiated GaN device again, comparing the results of the two rounds of tests with preset reference values. This effectively compares the differences between the electrical performance results of the GaN device after proton irradiation and before proton irradiation, thereby obtaining the displacement damage level of the GaN device. This allows for the effective prediction of the degree of displacement damage when the GaN device is subjected to the same level of irradiation, enabling early implementation of repair methods and avoiding impacts on efficiency and lifespan, thus solving the problems mentioned in the background art.
[0005] To achieve the above objectives, the present invention provides the following technical solution: a gallium nitride device displacement damage level testing system, comprising: The gallium nitride (GaN) device module is used to label and count several GaN devices under test, and save the data of the labeled GaN devices under test, thereby obtaining a database of GaN devices under test. The electrical performance testing unit is used to test the electrical performance of several gallium nitride devices under test before and after proton irradiation, thereby generating dual-round test results for the gallium nitride devices under test; the dual-round test results are: electrical performance data before proton irradiation and electrical performance data after proton irradiation. The irradiation module is used to irradiate several gallium nitride devices under test in the gallium nitride device module with protons, thereby obtaining the gallium nitride devices under test after proton irradiation. The electrical data comparison unit is used to compare the electrical performance data measured in the electrical performance testing unit before proton irradiation and after proton irradiation with the preset reference values, thereby obtaining the comparison results and transmitting the comparison results to the cloud server. The cloud server is used to receive the comparison results output by the electrical data comparison unit, save them to the database for backup, and transmit the results to the display terminal for users to view based on wireless communication technology. The display terminal is the user's smartphone, computer, or screen.
[0006] Furthermore, the gallium nitride device module also includes: The numbering module is used to group and number several gallium nitride devices under test, so that each gallium nitride device under test has an independent number, so that test data can be saved in a classified manner according to the number later.
[0007] Furthermore, the electrical performance testing unit includes: The front-end testing module is used to perform electrical performance tests on several gallium nitride devices that have not been irradiated with protons, thereby obtaining the test results without proton irradiation and recording and generating the front-end test results. The backend testing module is used to perform electrical performance tests on several gallium nitride devices under test after proton irradiation, thereby obtaining the test results after proton irradiation and recording and generating the backend test results.
[0008] Furthermore, the electrical data comparison unit includes: The reference value preset module uses big data of previous electrical performance test results as a reference benchmark to preset the qualified threshold of displacement damage level of gallium nitride device before proton irradiation and after proton irradiation, and uses this as a reference value for data comparison. The front-end comparison module is used to compare the test results of several gallium nitride devices under test that have not undergone proton irradiation with the front-end preset threshold in the data preset module, thereby obtaining the front-end comparison result. If the comparison result does not exceed the threshold, it is determined that the displacement damage level of the current gallium nitride device under test is low, that is, the displacement damage effect of the gallium nitride device under test is not obvious; if the comparison result exceeds the threshold, it is determined that the displacement damage level of the current gallium nitride device under test is high, that is, the displacement damage effect of the gallium nitride device under test is obvious. The back-end comparison module is used to compare the test results of several gallium nitride devices under test after proton irradiation with the back-end preset threshold in the data preset module to obtain the back-end comparison result. If the comparison result does not exceed the threshold, the displacement damage level of the current gallium nitride device under test is determined to be low, that is, the displacement damage effect of the gallium nitride device under test is not obvious. If the comparison result exceeds the threshold, the displacement damage level of the current gallium nitride device under test is determined to be high, that is, the displacement damage effect of the gallium nitride device under test is obvious. The comparison result processing module is used to process the comparison results of several gallium nitride devices under test generated by the front-end comparison module and the back-end comparison module. The processing content is as follows: the several gallium nitride devices under test are divided into several front-end comparison results and several back-end comparison results, and the two categories of comparison results are transmitted to the cloud server for storage and display.
[0009] Furthermore, the cloud server also includes: The WIFI communication module establishes a communication connection between the electrical data comparison unit and the cloud server based on wireless communication technology for transmitting comparison results; it also establishes a communication connection between the cloud server and the display terminal for displaying comparison results. The data database is used to store the comparison results transmitted by the electrical data comparison unit, and to classify and save the received comparison results in order by time series and the number of each gallium nitride device under test, so that users can view them as needed later.
[0010] Furthermore, the irradiation module performs proton irradiation on several gallium nitride devices to be tested, specifically as follows: Several gallium nitride devices to be tested are sequentially connected to a PCB test board, and then the PCB test board is fixed on an external moving platform. A laser collimator is used to align the center of the target chamber with the gallium nitride device to be tested.
[0011] Furthermore, the front-end testing module and the back-end testing module test several gallium nitride devices under test, specifically as follows: Several gallium nitride devices to be tested that have not been subjected to proton irradiation were obtained. Voltage stress loading and load capacitor discharge were performed on the gallium nitride devices to be tested based on semiconductor switching devices. If the semiconductor switching device is in the ON position and the gallium nitride device under test is in the OFF position, the voltage stress of the test is borne by the gallium nitride device under test, and the load capacitor discharges through the load resistor. If the semiconductor switching device is in the off state and the gallium nitride device under test is in the on state, the change in the drain-source voltage of the gallium nitride device under test will cause the voltage across the load capacitor to change, thereby generating a pulse current during the turn-on process of the gallium nitride device under test. That is, the electrical performance data of the gallium nitride device under test that has not been irradiated with protons will be generated and recorded to generate the front-end test results. Based on the same method described above, when several gallium nitride devices under test are obtained after proton irradiation, the tests are repeated to obtain the electrical performance data of the gallium nitride devices under test after proton irradiation, and the data are recorded to generate a second test result.
[0012] Furthermore, before driving the semiconductor switching device and the gallium nitride device under test, different driving time points need to be pre-set so that the semiconductor switching device and the gallium nitride device under test are driven at different time points to avoid the two devices being turned on at the same time.
[0013] Furthermore, the gallium nitride device displacement damage level testing system also includes: The irradiation setting module is used to set the irradiation parameters of the irradiation module; The irradiation setting module includes: The parameter determination module is used to determine the irradiation area of the gallium nitride device under test, and to obtain the irradiation dose and change stage of the gallium nitride device under test based on the irradiation area of the gallium nitride device under test. The irradiation parameter acquisition module is used to determine the proton flux and irradiation duration of the gallium nitride device under test based on the irradiation dose and its variation stage; wherein the proton flux and irradiation duration are obtained by the following formula:
[0014]
[0015] in, L Indicates the proton flux of irradiation; Q This indicates the irradiation dose corresponding to each irradiation stage; E Represents proton energy; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; f Indicates a symbolic parameter, when S 0 greater than S At 1 o'clock, f =1; when S 0 less than S At 1 o'clock, f =-1; T 0 indicates the standard area valueS The standard irradiation duration corresponding to 0; T This indicates the irradiation duration corresponding to each irradiation stage; T 0 indicates the preset reference irradiation duration; t This represents the floating factor.
[0016] Furthermore, the parameter determination module includes: An area acquisition module is used to acquire the irradiation area of the gallium nitride device under test; The stage number determination module is used to determine the number of irradiation stages of the gallium nitride device under test based on the irradiation area of the device; wherein, the number of irradiation stages is obtained by the following formula:
[0017] in, N This indicates the number of irradiation stages, rounded up. N 0 represents the preset baseline stage quantity value. N 0 = 1; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; The dose acquisition module is used to determine the irradiation dose for each irradiation stage based on the specific number of irradiation stages; wherein the irradiation dose for each irradiation stage is obtained using the following formula:
[0018] in, Q This indicates the irradiation dose corresponding to each irradiation stage; N i Indicates the first i The stage values corresponding to each irradiation stage; t Indicates the floating factor; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; Q 0 indicates the preset irradiation dose baseline value.
[0019] A method for implementing a gallium nitride device displacement damage level testing system, the method comprising the following steps: S1. Each gallium nitride device under test is grouped and numbered using a numbering module, so that each gallium nitride device under test has an independent number. S2. Based on big data of previous electrical performance test results, pre-set the qualified threshold for displacement damage level of gallium nitride devices before and after proton irradiation. S3. The electrical performance of several gallium nitride devices to be tested before proton irradiation is tested through the front-end testing module, and the test results are compared with the preset reference values. If the value does not exceed the threshold, the displacement damage level of the gallium nitride device to be tested is determined to be low, that is, the displacement damage effect of the gallium nitride device to be tested is not obvious; otherwise, the opposite is true. S4. Connect several gallium nitride devices to be tested sequentially to the PCB test board, then fix the PCB test board to an external moving platform, and use a laser collimator to align the center of the target chamber with the gallium nitride device to be tested, thereby irradiating the gallium nitride device to be tested with protons. S5. The electrical performance of several gallium nitride devices to be tested after proton irradiation is tested through the back-end comparison module, and the test results are compared with the preset reference values. The judgment method of the comparison results is the same as that of S3. S6. Based on wireless communication technology, the results of the dual-wheel comparison are sequentially transmitted to the database and display terminal for storage and display. S7. Users can view the test results of the displacement damage level of gallium nitride devices on the display terminal.
[0020] Compared with the prior art, the beneficial effects of the present invention are: This invention involves testing the electrical performance of a gallium nitride (GaN) device before proton irradiation, connecting the GaN device to a PCB test board, fixing the PCB test board to an external moving platform, and using a laser collimator to center the target chamber on the GaN device for proton irradiation. The electrical performance of the GaN device after proton irradiation is then tested again, and the results of both tests are compared sequentially with preset reference values. This effectively compares the differences between the electrical performance test results of the GaN device before and after proton irradiation and the preset reference values, thereby obtaining the displacement damage level of the GaN device. Based on this test result as a reference factor for subsequent damage, the degree of displacement damage to the GaN device after the same level of irradiation can be effectively predicted, allowing for early implementation of repair methods and avoiding impacts on the efficiency and lifespan of the GaN device. Attached Figure Description
[0021] Figure 1 This is a diagram showing the composition of the gallium nitride device displacement damage level testing system of the present invention; Figure 2 This is a flowchart of the gallium nitride device displacement damage level testing method of the present invention. Detailed Implementation
[0022] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0023] To address the technical problem of significant displacement damage in existing gallium nitride devices after neutron irradiation, which consequently affects device performance, efficiency, and shortens lifespan, please refer to [link to relevant documentation]. Figures 1-2 This embodiment provides the following technical solution: A system for testing the displacement damage level of gallium nitride devices includes: A gallium nitride (GaN) device module is used to label and count several GaN devices under test, and to save the data of the labeled GaN devices, thereby obtaining a database of GaN devices under test. The GaN device module also includes a numbering module, which is used to group and number the several GaN devices under test, so that each GaN device under test has an independent number, so that test data can be saved according to the number later. Specifically, the numbering module sorts the several GaN devices under test by number, so that the measured results can be saved with the corresponding GaN device number later. In a preferred embodiment, for example, if there are 10 GaN devices under test, the numbering module divides the 10 GaN devices under test into: A1, A2, A3....A10, and saves the 10 numbers and the corresponding GaN device data to the database. The measured results are then saved to the corresponding number.
[0024] The electrical performance testing unit is used to test the electrical performance of several gallium nitride (GaN) devices under test before and after proton irradiation, thereby generating dual-round test results for the GaN devices under test. The dual-round test results include electrical performance data before and after proton irradiation. Specifically, voltage stress loading and load capacitor discharge are performed on the GaN devices under test based on semiconductor switching devices. In one embodiment, before proton irradiation, the electrical performance testing unit sequentially tests A1, A2, A3... The A10 gallium nitride device under test undergoes a first round of voltage stress loading and load capacitor discharge to obtain the pulse current of the gallium nitride device under test, i.e., the front-end test result. Then, the A1, A2, A3...A10 gallium nitride devices under test are subjected to proton irradiation, and then the proton-irradiated A1, A2, A3...A10 gallium nitride devices under test are subjected to a second round of voltage stress loading and load capacitor discharge to obtain the pulse current of the gallium nitride device under test, i.e., the back-end test result. The results of both rounds are then transmitted to the cloud server in sequence.
[0025] The irradiation module is used to irradiate several gallium nitride devices under test in a gallium nitride device module with protons, thereby obtaining the gallium nitride devices under test after proton irradiation. In one embodiment, the irradiation module irradiates several gallium nitride devices under test with protons, specifically: gallium nitride devices A1, A2, A3...A10 under test are sequentially connected to a PCB test board, and the PCB test board is fixed on an external moving platform. A laser collimator is used to align the center of the target chamber with the gallium nitride device under test. Based on this method, gallium nitride devices A1, A2, A3...A10 under test are sequentially irradiated with protons, and each gallium nitride device under test after proton irradiation is subjected to a second round of electrical performance testing.
[0026] The electrical data comparison unit is used to compare the electrical performance data measured in the electrical performance testing unit before and after proton irradiation with preset reference values, thereby obtaining comparison results, and transmitting the comparison results to the cloud server. In one implementation, after performing two rounds of electrical performance tests on gallium nitride devices A1, A2, A3...A10 under test through the electrical performance testing unit, two rounds of test results are obtained, and the two rounds of results are compared with preset reference values. If the comparison results of both rounds do not exceed the threshold range, it indicates that the displacement damage level of the gallium nitride device under test is low, that is, the displacement damage effect of the gallium nitride device under test is not obvious; if the comparison result exceeds the threshold, it is determined that the displacement damage level of the gallium nitride device under test is high, that is, the displacement damage effect of the gallium nitride device under test is obvious; and vice versa.
[0027] The cloud server is used to receive the comparison results output by the electrical data comparison unit, save them to the database for backup, and transmit the results to the display terminal for users to view based on wireless communication technology. The display terminal is the user's smartphone, computer, or screen.
[0028] The electrical performance testing unit includes: The front-end testing module is used to perform electrical performance tests on several gallium nitride devices under test that have not undergone proton irradiation, thereby obtaining test results for the un-proton irradiated devices and recording and generating front-end test results. In one embodiment, the front-end testing module performs voltage stress loading and load capacitance discharge tests on gallium nitride devices A1, A2, A3...A10 that have not undergone proton irradiation, thereby obtaining front-end test results for each of the A1, A2, A3...A10 gallium nitride devices under test, and then sequentially transmits the ten sets of front-end test results to the electrical data comparison unit for comparison with preset reference values.
[0029] The back-end testing module is used to perform electrical performance tests on several gallium nitride devices under test after proton irradiation, thereby obtaining the test results after proton irradiation and recording them to generate back-end test results. In one implementation, the back-end testing module performs voltage stress loading and load capacitance discharge tests on gallium nitride devices A1, A2, A3...A10 after proton irradiation, thereby obtaining the back-end test results of gallium nitride devices A1, A2, A3...A10 respectively, and transmitting the ten sets of back-end test results sequentially to the electrical data comparison unit for comparison with preset reference values.
[0030] The electrical data comparison unit includes: The reference value preset module, based on a large dataset of past electrical performance test results, pre-sets acceptable thresholds for the displacement damage levels of gallium nitride (GaN) devices before and after proton irradiation, serving as reference values for data comparison. Specifically, by reviewing a large dataset of past electrical performance test results, including both those of GaN devices before and after proton irradiation, and considering the current displacement damage status of GaN devices, reference values are preset for the electrical performance of the GaN device under test before and after proton irradiation. These two reference values are then used for subsequent data comparison.
[0031] The front-end comparison module compares the test results of several gallium nitride devices under test that have not undergone proton irradiation with the front-end preset threshold in the data preset module to obtain the front-end comparison result. If the comparison result does not exceed the threshold, the displacement damage level of the current gallium nitride device under test is determined to be low, that is, the displacement damage effect of the gallium nitride device under test is relatively insignificant; if the comparison result exceeds the threshold, the displacement damage level of the current gallium nitride device under test is determined to be high, that is, the displacement damage effect of the gallium nitride device under test is relatively significant. In one implementation, for example, the front-end reference value is preset to a pulse current of 200A-230A through the reference value preset module, therefore 200A is the reference value for the front-end test result; By comparing the results measured by the front-end testing module, if the test results of the gallium nitride devices under test A1, A2, A3...A10 are all ≤200A-230A, it indicates that the displacement damage level of the gallium nitride devices under test A1, A2, A3...A10 is low, that is, the displacement loss is not obvious; if the test results of the gallium nitride devices under test A1, A2, A3...A10 are all ≥200A-230A, it indicates that the displacement damage level of the gallium nitride devices under test A1, A2, A3...A10 is high, that is, the displacement loss is obvious; based on this, it can be concluded that gallium nitride devices produce different displacement damage levels when subjected to different levels of pulse current.
[0032] The back-end comparison module compares the test results of several gallium nitride devices under test after proton irradiation with the back-end preset threshold in the data preset module to obtain the back-end comparison result. If the comparison result does not exceed the threshold, the displacement damage level of the current gallium nitride device under test is determined to be low, that is, the displacement damage effect of the gallium nitride device under test is not obvious; if the comparison result exceeds the threshold, the displacement damage level of the current gallium nitride device under test is determined to be high, that is, the displacement damage effect of the gallium nitride device under test is obvious. In one implementation, for example, the front-end reference value is preset by the reference value preset module to be: pulse current 200A-230A; combined with the results measured by the back-end test module, if the gallium nitride devices under test A1, A2, A3...A10 are subjected to proton irradiation, the comparison result is determined to be high. If the test results after proton irradiation are all ≤200A-230A, it indicates that the displacement damage level of the gallium nitride devices under test (A1, A2, A3...A10) is low, meaning the displacement loss is not significant. If the test results after proton irradiation of gallium nitride devices (A1, A2, A3...A10) are all ≥200A-230A, it indicates that the displacement damage level of the gallium nitride devices under test (A1, A2, A3...A10) is high, meaning the displacement loss is significant. Based on this, the different displacement damage levels of gallium nitride devices after proton irradiation and before proton irradiation can be determined. This serves as a benchmark for predicting the displacement damage level of gallium nitride devices in the future, allowing for the early implementation of maintenance methods to avoid affecting their efficiency and shortening their service life.
[0033] The comparison result processing module is used to process the comparison results of several gallium nitride devices under test generated by the front-end comparison module and the back-end comparison module. The processing content is as follows: the several gallium nitride devices under test are divided into several front-end comparison results and several back-end comparison results, and the two categories of comparison results are transmitted to the cloud server for storage and display.
[0034] Cloud servers also include: The WIFI communication module establishes a communication connection between the electrical data comparison unit and the cloud server based on wireless communication technology for transmitting comparison results; it also establishes a communication connection between the cloud server and the display terminal for displaying comparison results. The data repository stores the comparison results transmitted by the electrical data comparison unit. The received comparison results are categorized and saved sequentially according to time sequence and the serial number of each gallium nitride device under test, allowing users to view them as needed later. In one implementation, corresponding folders are created sequentially based on the serial numbers of the gallium nitride devices under test, and labeled with the numbers: A1 test result folder, A2 test result folder, A3 test result folder...A10 test result folder. Each folder is further divided into two subfolders. For example, the A1 test result folder is further divided into: A1 test results without proton irradiation and A1 test results after proton irradiation, and so on. A1-A10 are set up in the same way. Thus, the two rounds of test results for the ten groups of gallium nitride devices under test are sequentially saved to the corresponding folders, with timestamps marked in each folder for easy viewing and reference by the user later.
[0035] In one implementation, the front-end test module and the back-end test module test several gallium nitride devices under test, specifically: Several gallium nitride devices to be tested that have not been subjected to proton irradiation were obtained. Voltage stress loading and load capacitor discharge were performed on the gallium nitride devices to be tested based on semiconductor switching devices. If the semiconductor switching device is in the ON position and the gallium nitride device under test is in the OFF position, the voltage stress of the test is borne by the gallium nitride device under test, and the load capacitor discharges through the load resistor. If the semiconductor switching device is in the off state and the gallium nitride device under test is in the on state, the change in the drain-source voltage of the gallium nitride device under test will cause the voltage across the load capacitor to change, thereby generating a pulse current during the turn-on process of the gallium nitride device under test. That is, the electrical performance data of the gallium nitride device under test that has not been irradiated with protons will be generated and recorded to generate the front-end test results. Based on the same method described above, when several gallium nitride devices under test are obtained after proton irradiation, the tests are repeated to obtain the electrical performance data of the gallium nitride devices under test after proton irradiation, and the data are recorded to generate a second test result.
[0036] In one embodiment, the gallium nitride device displacement damage level testing system further includes: The irradiation setting module is used to set the irradiation parameters of the irradiation module; The irradiation setting module includes: The parameter determination module is used to determine the irradiation area of the gallium nitride device under test, and to obtain the irradiation dose and change stage of the gallium nitride device under test based on the irradiation area of the gallium nitride device under test. The irradiation parameter acquisition module is used to determine the proton flux and irradiation duration of the gallium nitride device under test based on the irradiation dose and its variation stage; wherein the proton flux and irradiation duration are obtained by the following formula:
[0037]
[0038] in, L Indicates the proton flux of irradiation; Q This indicates the irradiation dose corresponding to each irradiation stage; E Represents proton energy; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; f Indicates a symbolic parameter, when S 0 greater than S At 1 o'clock, f =1; when S 0 less than S At 1 o'clock, f =-1; T 0 indicates the standard area value S The standard irradiation duration corresponding to 0; T This indicates the irradiation duration corresponding to each irradiation stage; T 0 indicates the preset reference irradiation duration; t This represents the floating factor.
[0039] The technical advantages of the above solution are as follows: The parameter determination module can automatically calculate and determine the irradiation dose and variation stage based on the irradiation area of the gallium nitride device under test. This avoids manual calculation and tedious operations, improving work efficiency. Depending on the irradiation area of different devices, the parameter determination module can provide customized irradiation dose and variation stage settings for each device under test to meet specific experimental needs and testing requirements. The irradiation parameter acquisition module accurately calculates the required proton flux and irradiation duration based on the irradiation dose and variation stage of the gallium nitride device under test. This ensures accurate control of proton flux and irradiation duration during the experiment to meet specific irradiation requirements. By determining appropriate proton flux and irradiation duration based on the irradiation dose and variation stage of the device under test, the irradiation parameter acquisition module can help optimize experimental parameters to achieve more precise experimental control and more accurate test results. Therefore, the above technical solution achieves automated irradiation parameter setting and calculation, improving experimental efficiency and accuracy.
[0040] In one implementation, the parameter determination module includes: An area acquisition module is used to acquire the irradiation area of the gallium nitride device under test; The stage number determination module is used to determine the number of irradiation stages of the gallium nitride device under test based on the irradiation area of the device; wherein, the number of irradiation stages is obtained by the following formula:
[0041] in, N This indicates the number of irradiation stages, rounded up. N 0 represents the preset baseline stage quantity value. N 0 = 1; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; The dose acquisition module is used to determine the irradiation dose for each irradiation stage based on the specific number of irradiation stages; wherein the irradiation dose for each irradiation stage is obtained using the following formula:
[0042] in, Q This indicates the irradiation dose corresponding to each irradiation stage; N i Indicates the first i The stage values corresponding to each irradiation stage; t Indicates the floating factor; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; Q 0 indicates the preset irradiation dose baseline value.
[0043] The technical advantages of the above solution are as follows: the area acquisition module can automatically acquire the irradiation area of the gallium nitride device under test, eliminating the need for manual measurement and calculation. This improves work efficiency and reduces the possibility of human error. The accurate irradiation area information provided by the area acquisition module ensures the accuracy of subsequent parameter calculations and settings. This is crucial for accurate calculation of irradiation dose and the number of stages.
[0044] The stage number determination module automatically calculates and determines the required number of irradiation stages based on the irradiation area of the gallium nitride device under test. This eliminates the tedious process of manual calculation and improves work efficiency. For different irradiation areas, the stage number determination module can provide customized irradiation stage number settings to meet specific experimental needs and testing requirements. The dose acquisition module accurately calculates the irradiation dose for each irradiation stage based on the specific number of irradiation stages. This ensures accurate control and achievement of the irradiation dose for each stage. Depending on experimental or testing needs, the dose acquisition module can flexibly adjust the irradiation dose for each stage based on the number of irradiation stages to meet specific testing requirements and experimental objectives.
[0045] In one implementation, before driving the semiconductor switching device and the gallium nitride device under test, different driving time points need to be pre-set so that the semiconductor switching device and the gallium nitride device under test are driven at different time points to avoid the two devices being turned on at the same time.
[0046] A method for testing the displacement damage level of gallium nitride devices includes the following steps: S1. Each gallium nitride device under test is grouped and numbered using a numbering module, so that each gallium nitride device under test has an independent number. S2. Based on big data of previous electrical performance test results, pre-set the qualified threshold for displacement damage level of gallium nitride devices before and after proton irradiation. S3. The electrical performance of several gallium nitride devices to be tested before proton irradiation is tested through the front-end testing module, and the test results are compared with the preset reference values. If the value does not exceed the threshold, the displacement damage level of the gallium nitride device to be tested is determined to be low, that is, the displacement damage effect of the gallium nitride device to be tested is not obvious; otherwise, the opposite is true. S4. Connect several gallium nitride devices to be tested sequentially to the PCB test board, then fix the PCB test board to an external moving platform, and use a laser collimator to align the center of the target chamber with the gallium nitride device to be tested, thereby irradiating the gallium nitride device to be tested with protons. S5. The electrical performance of several gallium nitride devices to be tested after proton irradiation is tested through the back-end comparison module, and the test results are compared with the preset reference values. The judgment method of the comparison results is the same as that of S3. S6. Based on wireless communication technology, the results of the dual-wheel comparison are sequentially transmitted to the database and display terminal for storage and display. S7. Users can view the test results of the displacement damage level of gallium nitride devices on the display terminal.
[0047] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0048] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A system for testing the displacement damage level of gallium nitride devices, characterized in that, include: The gallium nitride (GaN) device module is used to label and count several GaN devices under test, and save the data of the labeled GaN devices under test, thereby obtaining a database of GaN devices under test. The electrical performance testing unit is used to test the electrical performance of several gallium nitride devices under test before and after proton irradiation, thereby generating dual-round test results for the gallium nitride devices under test. The results of the dual-cycle test are: electrical performance data before proton irradiation and electrical performance data after proton irradiation; The irradiation module is used to irradiate several gallium nitride devices under test in the gallium nitride device module with protons, thereby obtaining the gallium nitride devices under test after proton irradiation. The electrical data comparison unit is used to compare the electrical performance data measured in the electrical performance testing unit before and after proton irradiation with the preset reference values, thereby obtaining the comparison results and transmitting the comparison results to the cloud server. The cloud server is used to receive the comparison results output by the electrical data comparison unit, save them to the database for backup, and transmit the results to the display terminal for users to view based on wireless communication technology. The display terminal is the user's smartphone, computer or screen. Also includes: The irradiation setting module is used to set the irradiation parameters of the irradiation module; The irradiation setting module includes: The parameter determination module is used to determine the irradiation area of the gallium nitride device under test, and to obtain the irradiation dose and change stage of the gallium nitride device under test based on the irradiation area of the gallium nitride device under test. The irradiation parameter acquisition module is used to determine the proton flux and irradiation duration of the irradiation based on the irradiation dose and its variation stage of the gallium nitride device under test; wherein the proton flux and irradiation duration are obtained by the following formula: in, L Indicates the proton flux of irradiation; Q This indicates the irradiation dose corresponding to each irradiation stage; E Represents proton energy; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; f Indicates a symbolic parameter, when S 0 greater than S At 1 o'clock, f =1; when S 0 less than S At 1 o'clock, f =-1; T 0 indicates the standard area value S The standard irradiation duration corresponding to 0; T This indicates the irradiation duration corresponding to each irradiation stage; T 0 indicates the preset reference irradiation duration; t Indicates the floating factor; The parameter determination module includes: An area acquisition module is used to acquire the irradiation area of the gallium nitride device under test; The stage number determination module is used to determine the number of irradiation stages of the gallium nitride device under test based on the irradiation area of the device; wherein, the number of irradiation stages is obtained by the following formula: in, N This indicates the number of irradiation stages, rounded up. N 0 represents the preset baseline stage quantity value. N 0 = 1; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; The dose acquisition module is used to determine the irradiation dose for each irradiation stage based on the specific number of irradiation stages; wherein the irradiation dose for each irradiation stage is obtained using the following formula: in, Q This indicates the irradiation dose corresponding to each irradiation stage; N i Indicates the first i The stage values corresponding to each irradiation stage; t Indicates the floating factor; S 1 represents the irradiated area of the gallium nitride device under test; S This represents the total surface area of the gallium nitride device under test corresponding to the irradiated surface. S 0 indicates the preset area standard value; Q 0 indicates the preset irradiation dose baseline value.
2. The gallium nitride device displacement damage level testing system according to claim 1, characterized in that: The gallium nitride device module also includes: The numbering module is used to group and number several gallium nitride devices under test, so that each gallium nitride device under test has an independent number, so that test data can be saved in a classified manner according to the number later.
3. The gallium nitride device displacement damage level testing system according to claim 1, characterized in that: The electrical performance testing unit includes: The front-end testing module is used to perform electrical performance tests on several gallium nitride devices that have not been irradiated with protons, thereby obtaining the test results without proton irradiation and recording and generating the front-end test results. The backend testing module is used to perform electrical performance tests on several gallium nitride devices under test after proton irradiation, thereby obtaining the test results after proton irradiation and recording and generating the backend test results.
4. The gallium nitride device displacement damage level testing system according to claim 1, characterized in that: The electrical data comparison unit includes: The reference value preset module uses big data of previous electrical performance test results as a reference benchmark to preset the qualified threshold of displacement damage level of gallium nitride device before proton irradiation and after proton irradiation, and uses this as a reference value for data comparison. The front-end comparison module is used to compare the test results of several gallium nitride devices under test that have not been irradiated with the front-end preset threshold in the data preset module to obtain the front-end comparison result. If the comparison result does not exceed the threshold, the displacement damage level of the current gallium nitride device under test is determined to be low; if the comparison result exceeds the threshold, the displacement damage level of the current gallium nitride device under test is determined to be high. The back-end comparison module is used to compare the test results of several gallium nitride devices under test after proton irradiation with the back-end preset threshold in the data preset module to obtain the back-end comparison result. If the comparison result does not exceed the threshold, the displacement damage level of the current gallium nitride device under test is determined to be low; if the comparison result exceeds the threshold, the displacement damage level of the current gallium nitride device under test is determined to be high. The comparison result processing module is used to process the comparison results of several gallium nitride devices under test generated by the front-end comparison module and the back-end comparison module. Specifically, it divides the several gallium nitride devices under test into several front-end comparison results and several back-end comparison results, and transmits the two categories of comparison results to the cloud server for storage and display.
5. The gallium nitride device displacement damage level testing system according to claim 1, characterized in that: The cloud server also includes: The WIFI communication module establishes a communication connection between the electrical data comparison unit and the cloud server based on wireless communication technology for transmitting comparison results; it also establishes a communication connection between the cloud server and the display terminal for displaying comparison results. The data database is used to store the comparison results transmitted by the electrical data comparison unit, and to classify and save the received comparison results in order by time series and the number of each gallium nitride device under test, so that users can view them as needed later.
6. The gallium nitride device displacement damage level testing system according to claim 1, characterized in that: The irradiation module performs proton irradiation on several gallium nitride devices to be tested, specifically as follows: Several gallium nitride devices to be tested are sequentially connected to a PCB test board, and then the PCB test board is fixed on an external moving platform. A laser collimator is used to align the center of the target chamber with the gallium nitride device to be tested.
7. The gallium nitride device displacement damage level testing system according to claim 3, characterized in that: The front-end testing module and the back-end testing module test several gallium nitride devices under test, specifically: Several gallium nitride devices to be tested that have not been subjected to proton irradiation were obtained. Voltage stress loading and load capacitor discharge were performed on the gallium nitride devices to be tested based on semiconductor switching devices. If the semiconductor switching device is in the ON position and the gallium nitride device under test is in the OFF position, the voltage stress of the test is borne by the gallium nitride device under test, and the load capacitor discharges through the load resistor. If the semiconductor switching device is in the off state and the gallium nitride device under test is in the on state, the change in the drain-source voltage of the gallium nitride device under test will cause the voltage across the load capacitor to change, thereby generating a pulse current during the turn-on process of the gallium nitride device under test. Based on the same method described above, when several gallium nitride devices under test are obtained after proton irradiation, the test is repeated to obtain the electrical performance data of the gallium nitride devices under test after proton irradiation, and the data is recorded to generate a second test result. Before the drive test, different drive time points are preset for the semiconductor switching device and the gallium nitride device under test, and the drive test is performed on the semiconductor switching device and the gallium nitride device under test at different time points.
8. A method for implementing the gallium nitride device displacement damage level testing system as described in any one of claims 1-7, characterized in that: Includes the following steps: S1. Each gallium nitride device under test is grouped and numbered using a numbering module, so that each gallium nitride device under test has an independent number. S2. Based on big data of previous electrical performance test results, pre-set the qualified threshold for displacement damage level of gallium nitride devices before and after proton irradiation. S3. The electrical performance of several gallium nitride devices to be tested before proton irradiation is tested through the front-end testing module, and the test results are compared with the preset reference values. If the value does not exceed the threshold, the displacement damage level of the gallium nitride device to be tested is determined to be low, that is, the displacement damage effect of the gallium nitride device to be tested is not obvious; otherwise, the opposite is true. S4. Connect several gallium nitride devices to be tested sequentially to the PCB test board, then fix the PCB test board to an external moving platform, and use a laser collimator to align the center of the target chamber with the gallium nitride device to be tested, thereby irradiating the gallium nitride device to be tested with protons. S5. The electrical performance of several gallium nitride devices to be tested after proton irradiation is tested through the back-end comparison module, and the test results are compared with the preset reference values. The judgment method of the comparison results is the same as that of S3. S6. Based on wireless communication technology, the results of the dual-wheel comparison are sequentially transmitted to the database and display terminal for storage and display. S7. Users can view the test results of the displacement damage level of gallium nitride devices on the display terminal.