Neutron activation based power supply and method of making the same
By preparing a non-radioactive power source and activating it with neutron irradiation, the problem of radiation hazards in the preparation of traditional isotope batteries has been solved, realizing safe and low-cost power source production and stable active battery preparation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 中子科学(重庆)研究院有限公司
- Filing Date
- 2026-02-05
- Publication Date
- 2026-06-09
AI Technical Summary
In the traditional isotope battery preparation process, operators need to directly handle highly radioactive raw materials, which poses radiation hazards, safety risks, environmental pollution, and high costs.
First, a non-radioactive power source is prepared, and then activated into an active battery by neutron irradiation, avoiding direct contact with radioactive materials. The neutron activation process is optimized by using structures such as neutron reflector layers and anti-reflector layers to improve neutron utilization efficiency and activation uniformity.
It reduces radiation hazards during the manufacturing process, simplifies the production process, lowers costs, enables the standardization and mass production of power supplies, and ensures the stability of electrical performance and long lifespan.
Smart Images
Figure CN122177544A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of neutron activation technology, specifically to a neutron activation-based power source and its preparation method. Background Technology
[0002] An isotope battery is a device that converts the energy released from the decay of radioactive isotopes into electrical energy. Compared to traditional chemical batteries and solar cells, isotope batteries have significant advantages in energy density, operational lifespan, and environmental adaptability, making them irreplaceable in fields such as aerospace, deep-sea exploration, micro-sensors, and medical implants.
[0003] Traditional isotope battery fabrication processes face a major challenge: the radiation hazards of radioactive sources. Typically, during battery assembly and packaging, operators need to directly handle highly radioactive raw materials.
[0004] The existing solution involves personnel operating through glove boxes or hot chambers and wearing appropriate protective clothing during battery assembly and packaging. This not only places extremely high demands on protective measures, increases construction and manufacturing costs, and reduces production efficiency, but also brings potential safety risks, the possibility of environmental pollution, and difficulties in the decommissioning of radioactive facilities.
[0005] In the existing technology, how to avoid radiation hazards in the process of preparing radiation power sources is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention
[0006] This invention aims to at least partially solve one of the technical problems in related technologies. To this end, embodiments of this invention propose a neutron-activated power source and its preparation method. This power source can overcome the technical problem of how to avoid radiation hazards during the power source preparation process. It first prepares a non-radioactive (passive) power source, and then activates it into an active battery through neutron irradiation, thereby avoiding the risk of radioactive materials.
[0007] The neutron-activated power source of the present invention includes:
[0008] A radioactive source layer to be activated, wherein the radioactive source layer to be activated has particles that can be activated by neutrons into radioactive particles;
[0009] A transducer layer is disposed on the radioactive source layer to be activated in the thickness direction.
[0010] Optionally, the power supply includes:
[0011] A neutron reflector layer is disposed between the radioactive source layer to be activated and the transducer layer in the thickness direction of the radioactive source layer to be activated.
[0012] Optionally, the power supply includes:
[0013] A neutron anti-reflection layer is disposed on the radioactive source layer to be activated in the thickness direction, and the neutron anti-reflection layer and the transducer layer are respectively located on both sides of the radioactive source layer to be activated.
[0014] Optionally, the neutron check-reflecting layer has a groove and a gap, the groove being located on the surface of the neutron check-reflecting layer away from the radiation source layer to be activated, and the gap communicating with the groove.
[0015] Optionally, the neutron check-reflection layer includes a plurality of conical reflective blocks, which are arranged in an array on the radiation source layer to be activated, with adjacent conical reflective blocks spaced apart to form the gap.
[0016] Optionally, the power supply includes:
[0017] A neutron moderator layer is disposed on the surface of the neutron check-reflection layer away from the radiation source layer to be activated.
[0018] Optionally, the transducer layer includes at least one of vacancy trapping particles and interstitial atom trapping particles.
[0019] Optionally, the particles for the vacancy trapping function include at least one of boron and aluminum.
[0020] Optionally, the interstitial atom trap functional particles include at least one of nitrogen and phosphorus.
[0021] Optionally, a neutron irradiation power source can be used;
[0022] The power source is the power source described above. Attached Figure Description
[0023] Figure 1 This is a front sectional view of the power supply in a specific embodiment of the present invention.
[0024] Figure 2 This is a top view of the power supply in a specific embodiment of the present invention.
[0025] Figure reference numerals: 1000-power source, 100-radioactive source layer to be activated, 200-transducer layer, 300-neutron reflector layer, 400-neutron anti-reflector layer, 410-groove, 420-gap, 500-neutron moderator layer. Detailed Implementation
[0026] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.
[0027] The following description, with reference to the accompanying drawings, describes an embodiment of the neutron-activated power supply 1000 of the present invention. Figures 1 to 2 As shown, the power supply 1000 in this embodiment of the invention includes a radiation source layer 100 to be activated and a transducer layer 200.
[0028] The radioactive source layer 100 to be activated has radioactive particles that can be activated by neutrons, and the transducer layer 200 is disposed on the radioactive source layer 100 to be activated in the thickness direction.
[0029] According to a specific embodiment of the present invention, the power source 1000 is first prepared as a non-radioactive (passive) power source 1000, and then activated into an active battery through neutron irradiation, thereby avoiding the risks associated with radioactive materials. In other words, during the preparation and assembly of the power source 1000, technicians only handle stable, non-radioactive materials, completely avoiding the stringent protection, complex processes, and high costs associated with high-activity radioactive sources. This facilitates the standardization and mass production of the power source 1000, significantly reducing its manufacturing cost and barriers to entry. Figures 1 to 2 As shown, to make the technical solution of this application easier to understand, the technical solution of this application will be described in more detail below with a specific embodiment of the power supply 1000. It should be noted that, as... Figure 1 The vertical direction refers to the thickness direction of the radioactive source layer 100 to be activated.
[0030] In some specific embodiments, such as Figure 1 As shown, the radioactive source layer 100 to be activated contains particles that can be activated into radioactive particles by neutrons. It should be noted that the particles to be activated can be non-radioactive particles or radioactive ions. If the particles to be activated are non-radioactive, during the preparation and assembly of the power source 1000, technicians will only be in contact with stable, non-radioactive materials, completely avoiding the stringent protection, complex processes, and high costs associated with high-activity radioactive sources. Simultaneously, when the power source 1000 is needed, it is activated using neutron irradiation technology, thereby activating the particles to be activated into radioactive particles, that is, activating the non-radioactive (passive) power source 1000 into an active (radioactive) battery. If the particles to be activated are radioactive, neutron irradiation technology can be used to increase the radioactivity of the particles, thereby enhancing the energy of the radioactive source.
[0031] In some specific embodiments, the particles to be activated in this technical solution are preferably non-radioactive particles. Specifically, an easily activated and non-radioactive radioactive source layer 100 is deposited, wherein the radioactive source layer 100 includes non-radioactive particles that can be transformed into α or β radioactive nuclides with long half-lives and high decay energies after capturing neutrons. For example, the radioactive source layer 100 may include nickel-62 (which generates a β radioactive source nickel-63 after activation); carbon-12; nitrogen-14 (which generates a β radioactive source carbon-14 after activation, emitting β particles), etc. At the same time, by using the type of radioactive source layer 100 (such as nickel-62, carbon-12, nitrogen-14, etc.), power supplies based on different nuclides (such as nickel-63, carbon-14, etc.) can be easily prepared to meet the needs of different power levels, lifetime requirements, and application scenarios.
[0032] In some specific embodiments, such as Figure 1 As shown, the transducer layer 200 is disposed on the radioactive source layer 100 to be activated in the thickness direction. Specifically, the transducer layer 200 can convert radiation into electrical energy, thereby generating electricity.
[0033] In some specific embodiments, such as Figure 1 As shown, the transducer layer 200 includes at least one of vacancy-trapping particles and interstitial atom-trapping particles. Specifically, the vacancy-trapping particles, pre-doped into the lattice, differ in size and electronic structure from diamond, forming a "trapping center" in the lattice that can trap vacancies. In practice, when a large number of vacancies generated by neutron irradiation migrate in the lattice, they are easily trapped by these particles. The particles combine with the vacancies to form stable complexes. This process fixes the vacancies, preventing the diffusion and aggregation of free vacancies, and preventing the aggregation of vacancies to form larger defects (such as voids and dislocation rings) that would lead to severe degradation of the material's electrical properties. Additionally, the interstitial atom-trapping particles pre-doped into the lattice are mainly located at or near the interstitial positions of the lattice, forming a "trap." In practice, the highly mobile interstitial carbon atoms generated by irradiation are effectively trapped by these nitrogen traps during their movement. This greatly inhibits the combination of interstitial atoms with other interstitial atoms to form stable, harmful interstitial atom clusters. Simultaneously, the trapped interstitial atoms reduce their chances of recombination with free vacancies, making it more difficult to eliminate vacancies locked by the vacancy-trapping functional particles, thus ensuring the stable existence of the complex. At the same time, the simultaneous presence of vacancy-trapping functional particles and interstitial atom-trapping functional particles in the transducer layer 200 allows for the active suppression of the generation and accumulation of lattice defects caused by neutron irradiation through a synergistic mechanism. This significantly reduces irradiation damage to the transducer layer 200, ensuring the electrical performance stability and service life of the power supply 1000 after activation and during long-term operation.
[0034] In some specific embodiments, such as Figure 1 As shown, the particles with vacancy trapping function include at least one of boron and aluminum.
[0035] In some specific embodiments, such as Figure 1 As shown, the particles of the interstitial atom trap functional particles include at least one of nitrogen and phosphorus.
[0036] A neutron reflector layer 300 is disposed between the radioactive source layer 200 and the transducer layer 200 in the thickness direction of the radioactive source layer 100 to be activated. Specifically, the neutron reflector layer 300 not only confines neutrons to optimize activation, but also effectively blocks and reduces the irradiation flux of escaping neutrons to the transducer layer 200. At the same time, during conventional neutron activation, neutrons can cause irradiation damage to the transducer layer 200, generating lattice defects, which leads to a significant decrease in its electrical properties (such as carrier lifetime and mobility), thereby affecting the battery's output power and long-term stability. The neutron reflector layer 300 can effectively avoid the above-mentioned situations.
[0037] It should be noted that the neutron reflector layer 300 utilizes the principle of a neutron supermirror. Neutrons exhibit wave-particle duality; when low-energy neutrons are incident on the interface between two materials, some neutrons are reflected at the interface due to the difference in refractive index. Similar to X-rays, this low-energy reflection effect also follows Fresnel's law of reflection. The coherent superposition of neutron beams reflected from multiple interfaces constitutes the neutron reflection effect of the multilayer film, thereby achieving efficient neutron guidance and reflection.
[0038] In some specific embodiments, such as Figure 1 and Figure 2 As shown, the neutron anti-reflection layer 400 is disposed on the radioactive source layer 100 to be activated in the thickness direction of the radioactive source layer 100 to be activated. The neutron anti-reflection layer 400 and the transducer layer 200 are respectively located on both sides of the radioactive source layer 100 to be activated. Specifically, the neutron anti-reflection layer 400 can allow neutrons to pass through on one side, and can prevent neutrons from passing through on the other side.
[0039] In some specific embodiments, such as Figure 1 and Figure 2 As shown, the neutron anti-reflection layer 400 has a groove 410 and a gap 420. The groove 410 is located on the surface of the neutron anti-reflection layer 400 away from the radioactive source layer 100 to be activated, and the gap 420 is connected to the groove 410. Specifically, when the incident neutron reaches the structural surface of the neutron anti-reflection layer 400, the neutron will be reflected multiple times between the inclined surfaces of the groove 410, and the direction of motion of the neutron will be effectively deflected. Finally, it will enter the radioactive source layer 100 to be activated through the gap 420, thereby activating the particles to be activated.
[0040] It should be noted that the neutron anti-reflection layer 400 utilizes the principle of a neutron supermirror. Neutrons exhibit wave-particle duality; when low-energy neutrons are incident on the interface of two materials, some neutrons are reflected at the interface due to the difference in refractive index. Similar to X-rays, this low-energy reflection effect also follows Fresnel's law of reflection. The coherent superposition of neutron beams reflected from multiple interfaces constitutes the neutron reflection effect of the multilayer film, thereby achieving efficient neutron guidance and reflection.
[0041] In some specific embodiments, such as Figure 1 and Figure 2 As shown, the neutron check-reflection layer 400 includes multiple conical reflective blocks, which are arranged in an array on the radiation source layer 100 to be activated, with adjacent conical reflective blocks spaced apart to form gaps.
[0042] In some specific embodiments, such as Figure 1 and Figure 2 As shown, the neutron reflector layer 300 and the neutron anti-reflector layer 400 are located on both sides of the radioactive source layer 100 to be activated, respectively. The neutron reflector layer 300 and the neutron anti-reflector layer 400 work together to achieve efficient guidance and spatial confinement of neutrons. That is, when the incident neutron reaches the surface of the neutron anti-reflector layer 400, the neutron will be reflected multiple times between the inclined surfaces of the groove 410, and its direction of motion will be effectively deflected. Finally, it will enter the radioactive source layer 100 to be activated through the gap 420 of the neutron anti-reflector layer 400. Meanwhile, after the neutrons enter the radioactive source layer 100 to be activated, the neutron reflector layer 300 on the other side works in conjunction with the neutron check-reflector layer 400 to confine the neutrons between the two layers. That is, the neutrons are repeatedly scattered and reflected between the two layers, making escape difficult, and are thus effectively "trapped" within the radioactive source layer 100 until captured by the target nuclide. The synergistic effect of the neutron reflector layer 300 and the neutron check-reflector layer 400 creates a confinement environment where neutrons are "easy to enter but difficult to escape," greatly improving neutron utilization efficiency and activation uniformity. This ensures that the radioactive source layer 100 is fully and uniformly activated during irradiation, resulting in a radioactive source layer 100 with consistent performance and stable output, while significantly reducing irradiation damage to the transducer layer 200 caused by escaping neutrons.
[0043] In some specific embodiments, such as Figure 1As shown, the neutron moderator layer 500 is disposed on the surface of the neutron check-reflector layer 400 away from the radioactive source layer 100 to be activated. Specifically, the neutron moderator layer 500 moderates potentially escaping, high-energy neutrons into thermal neutrons, thereby increasing the probability of neutrons being captured by the radioactive source layer 100 to be activated, and further improving neutron utilization efficiency. At the same time, the neutron moderator layer 500, disposed on the surface of the neutron check-reflector layer 400, can enhance the mechanical stability of the neutron check-reflector layer 400.
[0044] In some specific embodiments, such as Figure 1 As shown, the method for preparing the power source includes using a neutron irradiation power source, wherein the power source is the aforementioned power source. Specifically, the packaged passive power source is placed in a thermal neutron field of moderated thermal neutrons generated by a high-current accelerator for irradiation, thereby activating the particles to be activated in the radioactive source layer 100, transforming the passive power source into an active power source capable of stably outputting electrical energy. This method allows for the initial preparation of a non-radioactive "passive" battery structure, which is then activated into an active battery through neutron irradiation, thus avoiding the risks of directly handling radioactive materials and facilitating mass production. Throughout the entire preparation and assembly stage, technicians only handle stable, non-radioactive materials, completely avoiding the stringent protection, complex processes, and high costs associated with handling high-activity radioactive sources in traditional methods. This makes the standardization and mass production of the power source possible, significantly reducing manufacturing costs and barriers to entry.
[0045] Example 1:
[0046] 1. A single-crystal diamond semiconductor with dimensions of 10mm in length × 10mm in width and a thickness of 100μm-300μm is selected as the transducer layer 200. During the growth process, the transducer layer 200 has been co-doped with boron at a concentration of 0.5ppm and nitrogen at a concentration of 5ppm by chemical vapor deposition. The depletion layer thickness is 5-10μm.
[0047] 2. The transducer layer 200 is placed in a high-vacuum magnetron sputtering coating apparatus. After argon ion bombardment cleaning, a neutron reflector layer 300 with a total thickness of approximately 100-500 nm is deposited on the transducer layer 200 using multi-target alternating sputtering technology. The single-layer thicknesses of the Ni and Ti layers are optimized to 2-10 nm and 1-5 nm, respectively, and are periodically alternating for approximately 30 cycles. The magnetron sputtering coating power is controlled at 30-90 W to ensure that the root mean square roughness of the surface does not exceed 1.5 nm.
[0048] 3. After the neutron reflector layer 300 is deposited, without breaking the vacuum, a thin film of 1-5 μm is deposited on the surface of the neutron reflector layer 300 as the radioactive source layer 100 to be activated by sputtering using a nickel-62 target with an abundance of 90-95% in the same equipment.
[0049] 4. On the surface of the radioactive source layer 100 to be activated, a neutron anti-reflection layer 400 with a microscopic pyramid array structure is prepared using multi-target alternating sputtering technology and nanoimprinting and tilting deposition techniques. This supermirror also adopts a Ni / Ti multilayer film structure, with the pyramid structure unit size being 0.1 mm long × 0.1 mm wide, and the total thickness being 100-500 nm. The gaps between the pyramid arrays are 100-500 nm to ensure that neutrons can pass through the gaps 420 into the radioactive source layer 100 to be activated and be effectively confined. The single-layer thicknesses of the Ni layer and Ti layer are optimized to be 2-10 nm and 1-5 nm, respectively, and are periodically alternated for approximately 30 cycles. The magnetron sputtering power is controlled at 30-90 W to ensure that the root mean square roughness of the surface does not exceed 1.5 nm. Subsequently, beryllium oxide material is sputtered and filled into the gaps 420 of the pyramid array to fix the structure and slow down any fast neutrons that may escape.
[0050] 5. On the prepared sandwich structure unit, metal electrodes are prepared by electron beam evaporation, and wires are led out using gold wire bonding technology. Subsequently, the core power generation unit is welded and fixed to the prefabricated alumina ceramic encapsulation base, and the whole is placed in a shell made of high-purity aluminum (purity >99.99%), finally forming a complete, non-radioactive "passive" power source.
[0051] 6. Place the encapsulated passive power supply into the thermal neutron irradiation channel of the high-current accelerator neutron source. When the thermal neutron fluence rate stabilizes at 1×10⁻⁶... 13 cm⁻²•s -1 Under these conditions, it was irradiated continuously for 180 days. During this period, the nickel-62 nucleus underwent a neutron capture reaction (…). 6 ²Ni(n,γ) 63 Ni was activated into a pure β-radioactive source, nickel-63, with a half-life of approximately 100.1 years. 6 (³Ni). After irradiation, a cooling period of 30-50 days is required to complete the preparation of the active power source.
[0052] 7. Electrical performance tests were conducted on the activated battery. The maximum output power of the battery was measured to be approximately 150-210 nW. Theoretical calculations and analysis of activation products confirmed that, thanks to the asymmetric roughness design of the sandwich configuration, the activation rate of nickel-62 reached 30-42%, and the neutron utilization efficiency was improved by 5-8 times compared to the structure without a reflective layer, effectively verifying the technical advantages of this invention. Compared with diamond semiconductors using undoped boron and nitrogen, the boron and nitrogen co-doped device used in this invention showed a 30%-50% reduction in carrier lifetime decay rate after experiencing the same dose of neutron irradiation, effectively verifying its technical advantages in suppressing irradiation damage.
[0053] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0054] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0055] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0056] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0057] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0058] Although the above embodiments have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Any changes, modifications, substitutions and variations made to the above embodiments by those skilled in the art are within the protection scope of the present invention.
Claims
1. A power source based on neutron activation, characterized in that, include: A radioactive source layer to be activated, wherein the radioactive source layer to be activated has particles that can be activated by neutrons into radioactive particles; A transducer layer is disposed on the radioactive source layer to be activated in the thickness direction.
2. The neutron-activated power source according to claim 1, characterized in that, include: A neutron reflector layer is disposed between the radioactive source layer to be activated and the transducer layer in the thickness direction of the radioactive source layer to be activated.
3. The neutron-activated power source according to claim 1, characterized in that, include: A neutron anti-reflection layer is disposed on the radioactive source layer to be activated in the thickness direction, and the neutron anti-reflection layer and the transducer layer are respectively located on both sides of the radioactive source layer to be activated.
4. The neutron-activated power source according to claim 3, characterized in that, The neutron check-reflecting layer has a groove and a gap. The groove is located on the surface of the neutron check-reflecting layer away from the radiation source layer to be activated, and the gap communicates with the groove.
5. The neutron-activated power source according to claim 4, characterized in that, The neutron check-back reflector layer includes multiple conical reflector blocks, which are arranged in an array on the radiation source layer to be activated, with adjacent conical reflector blocks spaced apart to form the gap.
6. The neutron-activated power source according to claim 3, characterized in that, include: A neutron moderator layer is disposed on the surface of the neutron anti-reflection layer away from the radiation source layer to be activated.
7. The neutron-activated power source according to claim 1, characterized in that, The transducer layer includes at least one of particles with vacancy trapping function and particles with interstitial atom trapping function.
8. The neutron-activated power source according to claim 7, characterized in that, The particles used for vacancy trapping include at least one of boron and aluminum.
9. The neutron-activated power source according to claim 7, characterized in that, The interstitial atom trap functional particles include at least one of nitrogen and phosphorus.
10. A method for preparing a power source based on neutron activation, characterized in that, Using neutron irradiation power sources; The power supply is the power supply according to any one of claims 1-9.