Magnetic skyrmion computing device

Abstract

A magnetic skyrmion computing device includes a substrate layer, a magnetic film stack disposed on the substrate layer and including at least a magnetic layer, the magnetic film stack including a first region having a first magnetic skyrmion, a second region, and a third region, and first and second electrodes electrically connected to the magnetic film stack and configured to have a current flowing therebetween through the first and third regions. The second region has a first state in which the second region has a second magnetic skyrmion and the first magnetic skyrmion is subject to a first repulsive force from the second magnetic skyrmion, and a second state in which the second region does not have the second magnetic skyrmion and the first magnetic skyrmion is not subject to the first repulsive force.

Description

Technical Field

[0001] At least one embodiment of this disclosure relates to a magnetic skyrmion arithmetic unit. Background Technology

[0002] Magnetic skyrmions are chiral topological magnetic structures that can exist in a variety of magnetic material systems. They are considered ideal building blocks for realizing high-density, low-power spintronic memory devices. However, besides memory devices, magnetic skyrmions also have enormous application potential in other types of electronic devices. Summary of the Invention

[0003] According to embodiments of this disclosure, a magnetic skyrmion arithmetic unit is provided, comprising: a substrate layer; a magnetic film stack disposed on the substrate layer and including at least a magnetic layer, the magnetic film stack including a first region, a second region, and a third region, the first region having a first magnetic skyrmion; and a first electrode and a second electrode, respectively electrically connected to the magnetic film stack and configured such that a current flowing therebetween passes through the first region and the third region, wherein the second region has a first state in which the second region has a second magnetic skyrmion and the first magnetic skyrmion is subjected to a first repulsive force from the second magnetic skyrmion; the second region has a second state in which the second region does not have the second magnetic skyrmion and the first magnetic skyrmion is not subjected to the first repulsive force.

[0004] For example, in the direction from the first region to the third region, the second region is located between the first region and the third region; when the second region is in the first state, the first repulsive force is greater than the driving force of the current flowing between the first electrode and the second electrode applied to the first magnetic skyrmion; when the second region is in the second state, the driving force drives the first magnetic skyrmion to move from the first region to the third region.

[0005] For example, the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure further includes: a third electrode and a fourth electrode, wherein the magnetic film stack includes a first strip and a second strip, which intersect each other and are integrally disposed; the first region and the third region belong to the first strip, and the first electrode and the second electrode are respectively connected to the two ends of the first strip in its extension direction, such that the current flowing between the first electrode and the second electrode passes through the first region and the third region; the third electrode and the fourth electrode are respectively connected to the two ends of the second strip in its extension direction, such that the current flowing between the third electrode and the fourth electrode passes through the second region.

[0006] For example, the substrate layer has pits corresponding to the first region, the second region, and the third region, and the magnetic layer is recessed in response to the pits; the substrate layer has a groove in response to the region between the first region and the third region, the groove connects the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed in response to the groove.

[0007] For example, the magnetic film stack further includes a fourth region, where the lines connecting the first region, the second region, and the third region form a triangle, and the second region and the fourth region are located on opposite sides of the line connecting the first region and the third region. The fourth region has a first state in which it has a third magnetic skyrmion, and the first magnetic skyrmion is subjected to a second repulsive force from the third magnetic skyrmion. The fourth region also has a second state in which it does not have the third magnetic skyrmion, and the first magnetic skyrmion is not subjected to the second repulsive force.

[0008] For example, in the direction from the first region to the third region, the second region and the fourth region are located between the first region and the third region; when the second region is in a first state and the fourth region is in a first state, the resultant force of the first repulsive force and the second repulsive force is greater than the driving force of the current flowing between the first electrode and the second electrode applied to the first magnetic skyrmion; when the second region is in a second state and the fourth region is in a second state, the driving force drives the first magnetic skyrmion to move from the first region to the third region.

[0009] For example, when the second region is in the first state and the fourth region is in the second state, the first repulsive force is greater than the driving force; and when the second region is in the second state and the fourth region is in the first state, the second repulsive force is greater than the driving force.

[0010] For example, the distance between the edge of the second region toward the fourth region and the edge of the fourth region toward the second region is less than the diameter of each of the first magnetic skyrmion, the second magnetic skyrmion, and the third magnetic skyrmion.

[0011] For example, when the second region is in the first state and the fourth region is in the second state, the first repulsive force is less than the driving force; and when the second region is in the second state and the fourth region is in the first state, the second repulsive force is less than the driving force.

[0012] For example, the distance between the edge of the second region toward the fourth region and the edge of the fourth region toward the second region is greater than the diameter of each of the first magnetic skyrmion, the second magnetic skyrmion and the third magnetic skyrmion and less than twice that diameter.

[0013] For example, the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure further includes: a fifth electrode and a sixth electrode, wherein the magnetic film stack includes a first strip and a first branch and a second branch branching from the first strip, the first branch and the second branch being located on opposite sides of the first strip; the first region and the third region belong to the first strip, the first electrode and the second electrode being respectively connected to the two ends of the first strip in its extension direction, such that current flowing between the first electrode and the second electrode passes through the first region and the third region; the fifth electrode is connected to the end of the first branch remote from the first strip, such that current flowing between the fifth electrode and the second electrode passes through the second region; the sixth electrode is connected to the end of the second branch remote from the first strip, such that current flowing between the sixth electrode and the second electrode passes through the fourth region.

[0014] For example, the substrate layer has pits corresponding to the first region, the second region, the third region, and the fourth region, and the magnetic layer is recessed in response to the pits; the substrate layer has a groove in response to the region between the first region and the third region, the groove connects the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed in response to the groove.

[0015] For example, the magnetic film stack further includes a fifth region; in the current direction, at least a portion of each of the second and fourth regions is located on a first side of the first region, and the third and fifth regions are located on a second side of the first region opposite to the first side, wherein the current direction is the direction of the current flowing between the first and second electrodes; relative to an auxiliary line parallel to the current direction and passing through the first region, the second and third regions are located on a first side of the auxiliary line, and the fourth and fifth regions are located on a second side of the auxiliary line opposite to the first side; the distance between the second region and the first region is different from the distance between the fourth region and the first region, and the angle between the line connecting the first and third regions and the auxiliary line is different from the angle between the line connecting the first and fifth regions and the auxiliary line.

[0016] For example, the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure further includes: a seventh electrode and an eighth electrode, wherein the magnetic film stack includes a first strip and a third branch and a fourth branch branching from the first strip, the third branch and the fourth branch being located on both sides of the first strip; the first region, the third region and the fifth region belong to the first strip, the first electrode and the second electrode are respectively connected to the two ends of the first strip in its extension direction, such that the current flowing between the first electrode and the second electrode passes through the first region, the third region and the fifth region; the seventh electrode is connected to the end of the third branch away from the first strip, such that the current flowing between the seventh electrode and the second electrode passes through the second region; the eighth electrode is connected to the end of the fourth branch away from the first strip, such that the current flowing between the eighth electrode and the second electrode passes through the fourth region.

[0017] For example, the substrate layer has pits corresponding to the first region, the second region, the third region, the fourth region, and the fifth region, and the magnetic layer is recessed corresponding to the pits; the substrate layer has a groove corresponding to the region between the first region and the third region, the groove connecting the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed corresponding to the groove; the substrate layer has a groove corresponding to the region between the first region and the fifth region, the groove connecting the pits corresponding to the first region and the pits corresponding to the fifth region, and the magnetic film stack is recessed corresponding to the groove.

[0018] For example, the maximum size of the opening of the pit is less than or equal to 1.5 times the diameter of the corresponding magnetic skyrmion at the pit; and the depth of the pit is greater than the depth of the groove, and the depth difference between the pit and the groove is on the same order of magnitude as the thickness of the magnetic layer.

[0019] For example, the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure further includes a magnetic skyrmion generating device, wherein the magnetic skyrmion generating device includes: a pit disposed in the substrate layer; a control electrode pair, including two control electrodes, respectively electrically connected to the magnetic film stack, wherein the pit of the magnetic skyrmion generating device is disposed between the two control electrodes such that the current flowing between the two control electrodes passes through the pit of the magnetic skyrmion generating device; and a magnetic field applying member, applying a magnetic field to the magnetic film stack, the direction of the magnetic field being parallel to the depth direction of the pit of the magnetic skyrmion generating device. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure.

[0021] Figure 1 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 1 ;

[0022] Figure 2 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 2 ;

[0023] Figure 3 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 3 ;

[0024] Figure 4 This is a cross-sectional schematic diagram of a magnetic film stacked on a substrate in a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure;

[0025] Figure 5 This is a schematic cross-sectional view of the base layer in a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. Based on the described embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0027] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “inner,” “outer,” “upper,” and “lower” are used only to indicate relative positional relationships, which may change accordingly when the absolute position of the described object changes.

[0028] The accompanying drawings in this disclosure are not drawn to scale, and the specific dimensions and quantity of each structure can be determined according to actual needs. The drawings described in this disclosure are only structural schematic diagrams.

[0029] Besides storage devices, magnetic skyrmions have great potential applications in other types of electronic devices. This disclosure provides a magnetic skyrmion arithmetic unit that utilizes the repulsive force between magnetic skyrmions and adjacent magnetic skyrmions to perform logical operations, probabilistic operations, and other computational functions. Figure 1 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 1 ; Figure 2 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 2 ; Figure 3 This is a planar schematic diagram of a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. Figure 3 ; Figure 4 This is a schematic cross-sectional view of a magnetic film stacked on a substrate in a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. See also Figures 1 to 4 According to an embodiment of the present disclosure, a magnetic skyrmion arithmetic unit includes: a substrate layer 1; a magnetic film stack 2 disposed on the substrate layer 1 and including at least a magnetic layer 2a, the magnetic film stack 2 including a first region R1, a second region R2 and a third region R3, wherein a first magnetic skyrmion is present in the first region R1; a first electrode EE1 and a second electrode EE2, respectively electrically connected to the magnetic film stack 2 and configured such that a current flowing therebetween passes through the first region R1 and the third region R3, wherein the second region R2 has a first state in which the second region R2 has a second magnetic skyrmion and the first magnetic skyrmion is subjected to a first repulsive force from the second magnetic skyrmion; the second region R2 has a second state in which the second region R2 does not have a second magnetic skyrmion and the first magnetic skyrmion is not subjected to the first repulsive force.

[0030] According to embodiments of this disclosure, the repulsive force generated between two magnetic skyrmions that are close to each other and the driving force of the current flowing between the two electrodes on the magnetic skyrmions are cleverly utilized. By adjusting the presence or absence of the repulsive force, the presence or absence of the driving force, and the relationship between the repulsive force and the driving force, logical operations, probabilistic operations, and other computational functions can be realized, greatly expanding the application field of magnetic skyrmions. Specifically, by controlling whether a second magnetic skyrmion is present at the second region R2, the first magnetic skyrmion at the first region R1 is controlled to be subjected to a first repulsive force. By controlling whether a current flows between the first electrode EE1 and the second electrode EE2, the first magnetic skyrmion at the first region R1 is controlled to be subjected to a current driving force. Furthermore, by controlling the relationship between the first repulsive force and the current driving force, the first magnetic skyrmion at the first region R1 can be controlled to move from the first region R1 to the second region R3, thereby realizing logical operations, probabilistic operations, and other computational functions.

[0031] For example, according to an embodiment of this disclosure, the base layer 1 includes a first substrate, which is an insulating substrate and may include quartz, glass, sapphire, etc. For example, according to an embodiment of this disclosure, the base layer 1 includes a second substrate and an insulating layer located on the second substrate; the second substrate can be flexibly selected as needed and may include an insulator, a semiconductor, or a conductor; the insulating layer may include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride, or organic insulating materials such as acrylic and epoxy resin.

[0032] For example, according to embodiments of this disclosure, the magnetic layer 2a is at least one of a ferromagnetic material, a ferrimagnetic material, and an antiferromagnetic material. For example, the magnetic layer 2a includes at least one element selected from Li, O, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cs, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Th, Pa, U, Pu, and Am. For example, the magnetic layer 2a includes at least one of Co, Fe, Ni, CoFeB, CoNiB, Ge, Gd, Dy, Tb, Mn, CrI3, Mn3Sn, Ru, and Te. For example, the first magnetic skyrmion, the second magnetic skyrmion, and the third magnetic skyrmion described below all belong to magnetic layer 2a.

[0033] For example, according to embodiments of this disclosure, such as Figure 4As shown, the magnetic film stack 2 further includes a first contact layer 2b in direct contact with the magnetic layer 2a. The material of the first contact layer 2b has spin-orbit coupling. For example, the first contact layer 2b includes at least one of transition metal oxides, heavy metals and their compounds, topological insulators, and transition metal sulfides. For example, the heavy metal is at least one of Ta, Pt, Ir, W, Mo, Cr, Re, Os, Au, Pd, Bi, Te, Ga, Hg, Gd, Tb, Tm, and Ge. The material of the first contact layer 2b has spin-orbit coupling, which, for some magnetic layers 2a (e.g., CoFeB), contributes to the generation of magnetic skyrmions.

[0034] For example, according to embodiments of this disclosure, such as Figure 4 As shown, the magnetic film stack 2 also includes a second contact layer 2c that is in direct contact with the magnetic layer 2a. This second contact layer 2c guides the spins in the magnetic layer 2a to have a tendency to align downwards or upwards in the thickness direction of the magnetic layer 2a. The presence of the second contact layer 2c is beneficial for the magnetic layer 2a to possess perpendicular magnetic anisotropy (PMA), which is advantageous for generating magnetic skyrmions in the magnetic layer 2a. For example, the second contact layer 2c may include MgO, TaO, etc. x At least one of Al2O3.

[0035] For example, according to embodiments of this disclosure, such as Figure 4 As shown, in the case where the magnetic film stack 2 includes a second contact layer 2c and the second contact layer 2c is located on the side of the magnetic layer 2a away from the substrate layer 10, the magnetic film stack 2 also includes a protective layer 2d, which is located on the side of the second contact layer 2c away from the substrate layer 1 and covers the second contact layer 2c. Some second contacts 2c (e.g., MgO) will deteriorate in quality when exposed to air; therefore, a protective layer 2d is provided to prevent the second contact layer 2c from deteriorating. For example, the protective layer 2d includes an inert metal, such as at least one of Pt, Ta, Au, Ag, Ti, Al, Ru, and Cr. For example, the protective layer 2d includes a stable oxide, such as SiO2 or TaO. x At least one of Al2O3, ITO, and ZrO2. For example, the protective layer 2d includes a stable nitride, such as Si3N4.

[0036] It should be noted that the magnetic film stack 2 does not necessarily include the first contact layer 2b and the second contact layer 2c; these can be flexibly selected based on the specific material properties of the magnetic layer 2a. It should also be noted that the magnetic film stack 2 does not necessarily include the protective layer 2d; these can be flexibly selected based on the location and specific material properties of the second contact layer 2c.

[0037] For example, the first electrode EE1 and the second electrode EE2 are electrically connected to the magnetic layer 2a of the magnetic film stack 2, respectively. For example, if the magnetic film stack 2 includes the first contact layer 2b as described above, the first electrode EE1 and the second electrode EE2 are electrically connected to at least one of the magnetic layer 2a and the first contact layer 2b of the magnetic film stack 2. For example, if the magnetic film stack 2 does not include the first contact layer 2b as described above, the first electrode EE1 and the second electrode EE2 are electrically connected to the magnetic layer 2a of the magnetic film stack 2. For example, if a current is applied between the first electrode EE1 and the second electrode EE2, this current applies a driving force to the first magnetic skyrmion at the first region R1; if no current is applied between the first electrode EE1 and the second electrode EE2, the first magnetic skyrmion at the first region R1 is not subject to this driving force.

[0038] For example, the first region R1 and the third region R3 are located on a first straight line so that the current flowing between the first electrode EE1 and the second electrode EE2 passes through both the first region R1 and the third region R3.

[0039] For example, the first magnetic skyrmion, the second magnetic skyrmion, and the third magnetic skyrmion, as described below, can be generated by a generating device included in a magnetic skyrmion arithmetic unit, as described below, and then moved to the first region R1, the second region R2, and the fourth region R4, as described below, respectively. For example, the first magnetic skyrmion, the second magnetic skyrmion, and the third magnetic skyrmion, as described below, can be moved from other magnetic skyrmion devices connected to the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure into the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure, and then moved to the first region R1, the second region R2, and the fourth region R4, as described below, respectively.

[0040] For example, see Figure 1 In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, in the direction from the first region R1 to the third region R3, the second region R2 is located between the first region R1 and the third region R3; when the second region R2 is in a first state, the first repulsive force is greater than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion; when the second region R2 is in a second state, the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion drives the first magnetic skyrmion to move from the first region R1 to the third region R3. Figure 1The magnetic skyrmion arithmetic unit shown can be used as a NOT gate logic unit. Specifically, the second region R2 is the input bit, and the third region R3 is the output bit. When the second region R2 is in the first state, the second region R2 has a second magnetic skyrmion, the input is "1", and the first repulsive force is greater than the driving force applied to the first magnetic skyrmion by the current flowing between the first electrode EE1 and the second electrode EE2, so that the first magnetic skyrmion cannot move from the first region R1 to the third region R3, and the output is "0". When the second region R2 is in the second state, the second region R2 does not have a magnetic skyrmion, the input is "0", and the current driving force drives the first magnetic skyrmion to move from the first region R1 to the third region R3, and the output is "1".

[0041] For example, in Figure 1 In this configuration, the lines connecting the first region R1, the second region R2, and the third region R3 form a triangle. This ensures that the second region R2 is not collinear with the first and third regions R1 and R3. In the second state where the second region R2 does not contain a second magnetic skyrmion, the second region R2 (e.g., having a pit, as described below) does not impede the movement of the first magnetic skyrmion as it is driven by a current-driven force from the first region R1 to the third region R3. In this case, for example, the current flowing between the first electrode EE1 and the second electrode EE2 does not pass through the second region R2.

[0042] However, it should be noted that the first region R1, the second region R2, and the third region R3 can also be located on the same straight line; in the second state where the second region R2 does not have the second magnetic skyrmion, as long as the intensity of the current flowing between the first electrode EE1 and the second electrode EE2 is sufficiently large, the first magnetic skyrmion can be smoothly moved from the first region R1 to the third region R3. In this case, for example, the current flowing between the first electrode EE1 and the second electrode EE2 passes through the second region R2.

[0043] For example, see continue. Figure 1According to an embodiment of this disclosure, the magnetic skyrmion arithmetic unit further includes a third electrode EE3 and a fourth electrode EE4; the magnetic film stack 2 includes a first strip ST1 and a second strip ST2, which intersect each other and are integrally disposed; a first region R1 and a third region R3 belong to the first strip ST1, and the first electrode EE1 and the second electrode EE2 are respectively connected to the two ends of the first strip ST1 in its extension direction, so that the current flowing between the first electrode EE1 and the second electrode EE2 passes through the first region R1 and the third region R3; the third electrode EE3 and the fourth electrode EE4 are respectively connected to the two ends of the second strip ST2 in its extension direction, so that the current flowing between the third electrode EE3 and the fourth electrode EE4 passes through the second region R2. By setting the third electrode EE3 and the fourth electrode EE4, the current flowing between the third electrode EE3 and the fourth electrode EE4 can conveniently move the second magnetic skyrmion into or out of the second region R2, conveniently realizing an input of "0" or an input of "1". By setting the first strip ST1, the current flowing between the first electrode EE1 and the second electrode EE2 can be concentrated within the range defined by the first strip ST1; by setting the second strip ST2, the current flowing between the third electrode EE3 and the fourth electrode EE4 can be concentrated within the range defined by the second strip ST2. This improves the stability and controllability of the movement of the first and second magnetic skyrmions, increases the current driving efficiency, and enhances the performance of the magnetic skyrmion arithmetic unit. For example, the first strip ST1 is perpendicular to the second strip ST2. For example, to facilitate the current flowing between the third electrode EE3 and the fourth electrode EE4 through the second region R2, the second region R2 is at least partially located in the second strip ST2. For example, at least part of the second region R2 is located in the first strip ST1, so that the second region R2 is close enough to the first region R1 that the second magnetic skyrmion exerts the aforementioned first repulsive force on the first magnetic skyrmion.

[0044] Figure 5 This is a schematic cross-sectional view of the substrate layer in a magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure. For example, see... Figure 1 and Figure 5 In the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure, the substrate layer 1 is provided with pits PN' corresponding to the first region R1, the second region R2, and the third region R3, respectively, and the magnetic layer 2a is recessed corresponding to the pits PN'; the substrate layer 1 is provided with a groove TN' corresponding to the region between the first region R1 and the third region R3, the groove TN' connecting the pits PN' corresponding to the first region R1 and the third region R3, and the magnetic film stack 2 is recessed corresponding to the groove TN'. It should be noted that in Figure 5In the diagram, the magnetic film stack 2 covering the substrate 1 is omitted, so the pits PN' and grooves TN' of the substrate 1 are clearly shown; Figure 1 In the figure, since the magnetic film stack 2 covers the substrate layer 1, the depression PN corresponding to the pit PN' of the magnetic film stack 2 is shown, and the depression TN corresponding to the groove TN' of the magnetic film stack 2 is shown.

[0045] For example, multiple recesses PN' and multiple grooves TN' are provided on the travel path of the first strip ST1 to facilitate the movement of the first magnetic skyrmion. For example, multiple recesses PN' and multiple grooves TN' are provided on the travel path of the second strip ST2 to facilitate the movement of the second magnetic skyrmion.

[0046] According to embodiments of this disclosure, the increase in magnetic anisotropy caused by the presence of the Dzyaloshinskii-Moriya Interaction (DMI) can be significantly reduced at the pit PN', thereby reducing the overall energy of the magnetic skyrmion at the pit PN'. In this way, on the one hand, once the first and second magnetic skyrmions are in place, they can be stably located in the first region R1 and the second region R2; on the other hand, as the first magnetic skyrmion moves from the first region R1 to the third region R3 under the drive of the current, it will move towards the pit PN' in the third region R3, where the energy is lower, and fall into the pit PN'. This realizes the movement of the first magnetic skyrmion from one pit to another, allowing it to move stably and controllably a predetermined distance and reach a predetermined position, thus significantly improving the controllability and stability of the magnetic skyrmion arithmetic unit according to embodiments of this disclosure.

[0047] According to the embodiments of this disclosure, by setting a groove TN', the magnetic skyrmion has a lower energy at the groove TN', so the first magnetic skyrmion can easily move along the groove TN' with lower energy. This allows the first magnetic skyrmion to move from the first region R1 to the third region R3 along the fixed trajectory defined by the groove TN', further increasing the stability and controllability of the movement of the first magnetic skyrmion. This significantly improves the controllability and stability of the magnetic skyrmion arithmetic unit according to the embodiments of this disclosure.

[0048] For example, see Figure 1 The absence of a groove TN' between the first region R1 and the second region R2, and the absence of a groove TN' between the third region R3 and the second region R2, further ensures the stable movement of the first magnetic skyrmion from the first region R1 to the third region R3 without any extraneous interference.

[0049] For example, see Figure 2 and Figure 3In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, the magnetic film stack 2 further includes a fourth region R4, the lines connecting the first region R1, the second region R2 and the third region R3 form a triangle, the lines connecting the first region R1, the third region R3 and the fourth region R4 form a triangle, and the second region R2 and the fourth region R4 are respectively located on both sides of the line connecting the first region R1 and the third region R3; the fourth region R4 has a first state, in which the fourth region R4 has a third magnetic skyrmion, and the first magnetic skyrmion is subjected to a second repulsive force from the third magnetic skyrmion; the fourth region R4 has a second state, in which the fourth region R4 does not have a third magnetic skyrmion, and the first magnetic skyrmion is not subjected to the second repulsive force. By controlling whether a second magnetic skyrmion exists at the second region R2, the first magnetic skyrmion at the first region R1 is controlled to be subjected to a first repulsive force. By controlling whether a third magnetic skyrmion exists at the fourth region R4, the first magnetic skyrmion at the first region R1 is controlled to be subjected to a second repulsive force. By controlling whether current flows between the first electrode EE1 and the second electrode EE2, the first magnetic skyrmion at the first region R1 is controlled to be subjected to a current driving force. Furthermore, the relationship between the magnitude of one or both of the first and second repulsive forces and the current driving force can be controlled. In this way, it is possible to control whether the first magnetic skyrmion at the first region R1 can move from the first region R1 to the second region R3, thereby realizing logical operations, probability operations, and other computational functions.

[0050] For example, see Figure 2In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, in the direction from the first region R1 to the third region R3, the second region R2 and the fourth region R4 are located between the first region R1 and the third region R3; when the second region R2 is in the first state and the fourth region R4 is in the first state, the resultant force of the first repulsive force and the second repulsive force is greater than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion; when the second region R2 is in the second state and the fourth region R4 is in the second state, the driving force drives the first magnetic skyrmion to move from the first region R1 to the third region R3. For example, the second region R2 and the fourth region R4 are input bits, and the third region R3 is an output bit. When both the second region R2 and the fourth region R4 are in the first state, the second region R2 has a second magnetic skyrmion, and the input is "1". The fourth region R4 has a third magnetic skyrmion, and the input is also "1". The resultant force of the first repulsive force and the second repulsive force is greater than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion, so that the first magnetic skyrmion cannot move from the first region R1 to the third region R3, and the output is "0". When both the second region R2 and the fourth region R4 are in the second state, the second region R2 does not have a second magnetic skyrmion, and the input is "0". The fourth region R4 does not have a third magnetic skyrmion, and the input is also "0". The current driving force drives the first magnetic skyrmion to move from the first region R1 to the third region R3, and the output is "1".

[0051] For example, see continue. Figure 2 In the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure, when the second region R2 is in the first state and the fourth region R4 is in the second state, the first repulsive force is greater than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion; and when the second region R2 is in the second state and the fourth region R4 is in the first state, the second repulsive force is greater than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion. In this case, Figure 2 The magnetic skyrmion arithmetic unit shown is used as a NOR gate logic arithmetic unit. Specifically, when the second region R2 is in the first state (input "1") and the fourth region R4 is in the second state (input "0"), the first repulsive force is greater than the driving force, and the first magnetic skyrmion cannot move from the first region R1 to the third region R3, so the output is "0"; when the second region R2 is in the second state (input "0") and the fourth region R4 is in the first state (input "1"), the second repulsive force is greater than the driving force, and the first magnetic skyrmion cannot move from the first region R1 to the third region R3, so the output is "0".

[0052] For example, see continue. Figure 2 The distance T between the edge of the second region R2 toward the fourth region R4 and the edge of the fourth region R4 toward the second region R2 is less than the diameter of each of the first, second, and third magnetic skyrmions. In this way, both the second region R2 and the fourth region R4 are very close to the first region R1, easily making the first repulsive force greater than the current driving force and the second repulsive force also greater than the current driving force, thus realizing a NOR gate logic operator.

[0053] For example, see continue. Figure 2 In the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure, when the second region R2 is in the first state and the fourth region R4 is in the second state, the first repulsive force is less than the driving force of the current flowing between the first electrode EE1 and the second electrode EE2 applied to the first magnetic skyrmion; and when the second region R2 is in the second state and the fourth region R4 is in the first state, the second repulsive force is less than the driving force. In this case, Figure 2 The magnetic skyrmion arithmetic unit shown is used as a NAND gate logic unit. Specifically, when the second region R2 is in the first state (input "1") and the fourth region R4 is in the second state (input "0"), the first repulsive force is less than the current driving force, and the first magnetic skyrmion moves from the first region R1 to the third region R3 under the action of the current driving force, with an output of "1"; when the second region R2 is in the second state (input "0") and the fourth region R4 is in the first state (input "1"), the second repulsive force is less than the current driving force, and the first magnetic skyrmion moves from the first region R1 to the third region R3 under the action of the current driving force, with an output of "1".

[0054] For example, see continue. Figure 2 The distance T between the edge of the second region R2 toward the fourth region R4 and the edge of the fourth region R4 toward the second region R2 is greater than the diameter of each of the first magnetic skyrmion, the second magnetic skyrmion and the third magnetic skyrmion and less than twice that diameter. This conveniently makes the first repulsive force less than the current driving force, and the second repulsive force also less than the current driving force. However, the resultant force of the first repulsive force and the second repulsive force is greater than the current driving force, thus realizing the NAND gate logic operator.

[0055] For example, see Figure 2According to an embodiment of the present disclosure, the magnetic skimming arithmetic unit further includes a fifth electrode EE5 and a sixth electrode EE6; the magnetic film stack 2 includes a first strip ST1 and a first branch BR1 and a second branch BR2 branching from the first strip ST1, the first branch BR1 and the second branch BR2 being located on both sides of the first strip ST1; a first region R1 and a third region R3 belong to the first strip ST1, the first electrode EE1 and the second electrode EE2 are respectively connected to the two ends of the first strip ST1 in its extension direction, such that the current flowing between the first electrode EE1 and the second electrode EE2 passes through the first region R1 and the third region R3; the fifth electrode EE5 is connected to the end of the first branch BR1 away from the first strip ST1, such that the current flowing between the fifth electrode EE5 and the second electrode EE2 passes through the second region R2; the sixth electrode EE6 is connected to the end of the second branch BR2 away from the first strip ST1, such that the current flowing between the sixth electrode EE6 and the second electrode EE2 passes through the fourth region R4. By setting the first strip ST1, the current flowing between the first electrode EE1 and the second electrode EE2 can be concentrated within the range defined by the first strip ST1. By setting the first branch BR1, the current flowing between the fifth electrode EE5 and the second electrode EE2 can be concentrated within the range defined by the first branch BR1 and a portion of the first strip ST1. By setting the second branch BR2, the current flowing between the sixth electrode EE6 and the second electrode EE2 can be concentrated within the range defined by the second branch BR2 and a portion of the first strip ST1. This improves the stability and controllability of the motion of the first, second, and third magnetic skyrmions, increases the current driving efficiency, and enhances the performance of the magnetic skyrmion arithmetic unit. For example, to facilitate the current flowing between the fifth electrode EE5 and the second electrode EE2 through the second region R2, the second region R2 is at least partially located in the first branch BR1. For example, at least a portion of the second region R2 is located in the first strip ST1, so that the second region R2 is close enough to the first region R1 that the second magnetic skyrmion exerts the aforementioned first repulsive force on the first magnetic skyrmion. For example, to facilitate the flow of current between the sixth electrode EE6 and the second electrode EE2 through the fourth region R4, the fourth region R4 is at least partially located in the second branch BR2. For example, at least part of the fourth region R4 is located in the first strip ST1, so that the fourth region R4 is close enough to the first region R1 that the third magnetic skyrmion exerts the aforementioned second repulsive force on the first magnetic skyrmion.

[0056] It should be noted that, in the above description, as an example, the distance T is conveniently controlled to cooperate with the first, second, and third magnetic skyrmions to implement NOR gate logic operators or NAND gate logic operators. However, the embodiments disclosed herein are not limited to this. Those skilled in the art can... Figure 2The magnetic skyrmion arithmetic unit allows for more flexible and diverse designs. For example, it is possible to implement NOR gate logic units or NAND gate logic units by controlling factors such as the depth difference between the pit PN' and the groove TN', the spacing S between the first region R3 and the third region R3, and the current density of the current flowing between the first electrode EE1 and the second electrode EE2, and their combinations thereof.

[0057] For example, see Figure 2 In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, the substrate layer 1 is provided with pits PN' corresponding to the first region R1, the second region R2, the third region R3, and the fourth region R4, respectively, and the magnetic layer 2a is recessed corresponding to the pits PN'; the substrate layer 1 is provided with a groove TN' corresponding to the region between the first region R1 and the third region R3, the groove TN' connecting the pits PN' corresponding to the first region R1 and the third region R3, and the magnetic film stack 2 is recessed corresponding to the groove TN'. (Refer to reference...) Figure 1 Similarly, the pit PN' is provided to facilitate the stable placement of the first to third magnetic skyrmions at the low-energy pit PN', respectively. The combination of pit PN' and groove TN' is for the stable and controllable movement of the first magnetic skyrmion from the first region R1 to the third region R3, which will not be elaborated further here. For example, no groove TN' is provided between the first region R1 and each of the second region R2 and the fourth region R4, and no groove TN' is provided between the third region R3 and each of the second region R2 and the fourth region R4, to ensure the stable movement of the first magnetic skyrmion from the first region R1 to the third region R3 and avoid unnecessary complications.

[0058] See Figure 3 In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, the magnetic film stack 2 further includes a fifth region R5; in the current direction, at least a portion of each of the second region R2 and the fourth region R4 is located on a first side of the first region R1, and the third region R3 and the fifth region R5 are located on a second side of the first region R1 opposite to the first side, wherein the current direction is the direction of the current flowing between the first electrode EE1 and the second electrode EE2; relative to the auxiliary line LL which is parallel to the current direction and passes through the first region R1, the second region R2 and the third region R3 are located on a first side of the auxiliary line LL, and the fourth region R4 and the fifth region R5 are located on a second side of the auxiliary line LL opposite to the first side; the distance between the second region R2 and the first region R1 is different from the distance between the fourth region R4 and the first region R1, and the angle θ1 between the line connecting the first region R1 and the third region R3 and the auxiliary line LL is different from the angle θ2 between the line connecting the first region R1 and the fifth region R5 and the auxiliary line LL.

[0059] Figure 3The magnetic skyrmion arithmetic unit shown can be used as a probability arithmetic unit. For example, the first region R1 is the input bit of the probability arithmetic unit, the second region R2 and the fourth region R4 are two control bits used to adjust the output weights, and the third region R3 and the fifth region R5 are two output bits. The first magnetic skyrmion located in the first region R1 will move to the third region R3 and the fifth region R5 with a certain probability under the driving force of the current flowing between the first electrode EE1 and the second electrode EE2. This probability can be modulated by the presence or absence of the first repulsive force and the second repulsive force. For example, when the second region R2 is in a second state without a second magnetic skyrmion and the fourth region R4 is in a second state without a third magnetic skyrmion, because θ1 is different from θ2, the probability of the first magnetic skyrmion located in the first region R1 moving to the two output bits of the third region R3 and the fifth region R5 under the action of the current driving force is different; for example, if θ1 is less than θ2, then the probability of the first magnetic skyrmion moving from the first region R1 to the third region R3 is greater than the probability of moving to the fifth region R5; furthermore, for example, if θ2 is twice θ1, then the probability of the first magnetic skyrmion moving from the first region R1 to the third region R3 and the probability of moving to the fifth region R5 are 2 / 3 and 1 / 3, respectively. For example, when the second region R2 is in a first state with a second magnetic skyrmion and the fourth region R4 is in a second state without a third magnetic skyrmion, then under the action of the first repulsive force, the probability of the first magnetic skyrmion moving from the first region R1 to the third region R3 and the probability of moving to the fifth region R5 are 0 and 1, respectively. For example, when the second region R2 is in a second state without a second magnetic skyrmion and the fourth region R4 is in a first state with a third magnetic skyrmion, under the action of the second repulsive force, the probability of the first magnetic skyrmion moving from the first region R1 to the third region R3 and the probability of moving to the fifth region R5 are 1 and 0, respectively. For example, when the second region R2 is in a first state with a second magnetic skyrmion and the fourth region R4 is in a first state with a third magnetic skyrmion, since the distance between the second region R2 and the first region R1 is different from the distance between the fourth region R4 and the first region R1, the probability of the first magnetic skyrmion located in the first region R1 moving to the two output bits of the third region R3 and the fifth region R5 under the action of the resultant force of the first and second repulsive forces and the current driving force is different; for example, if the distance between the second region R2 and the first region R1 is less than the distance between the fourth region R4 and the first region R1, the probability of the first magnetic skyrmion moving from the first region R1 to the third region R3 is less than the probability of moving to the fifth region R5.

[0060] For example, the current direction mentioned above is from the first electrode EE1 to the second electrode EE2; in Figure 1In the direction from the first region R1 to the third region R3, the second region R2 is located between the first region R1 and the third region R3. Figure 2 In the direction from the first region R1 to the third region R3, the second region R2 and the fourth region R4 are located between the first region R1 and the third region R3. Therefore, the component of the first repulsive force in the current direction is opposite to the current direction, and the component of the second repulsive force in the current direction is also opposite to the current direction. Figure 3 In this context, since at least a portion of each of the second region R2 and the fourth region R4 is located on the first side of the first region R1 in the current direction, while the third region R3 and the fifth region R5 are located on the second side of the first region R1 opposite to the first side, the component of the first repulsive force in the current direction is the same as the current direction in the direction, and the component of the second repulsive force in the current direction is the same as the current direction in the direction.

[0061] For example, see Figure 3According to an embodiment of the present disclosure, the magnetic skimming arithmetic unit further includes a seventh electrode EE7 and an eighth electrode EE8. The magnetic film stack 2 includes a first strip ST1 and a third branch BR3 and a fourth branch BR4 branching from the first strip ST1. The third branch BR3 and the fourth branch BR4 are located on opposite sides of the first strip ST1. A first region R1, a third region R3, and a fifth region R5 belong to the first strip ST1. The first electrode EE1 and the second electrode EE2 are respectively connected to the two ends of the first strip ST1 in its extending direction, such that the current flowing between the first electrode EE1 and the second electrode EE2 passes through the first region R1, the third region R3, and the fifth region R5. The seventh electrode EE7 is connected to the end of the third branch BR3 away from the first strip ST1, such that the current flowing between the seventh electrode EE7 and the second electrode EE2 passes through the second region R2. The eighth electrode EE8 is connected to the end of the fourth branch BR4 away from the first strip ST1, such that the current flowing between the eighth electrode EE8 and the second electrode EE2 passes through the fourth region R4. By setting the first strip ST1, the current flowing between the first electrode EE1 and the second electrode EE2 can be concentrated within the range defined by the first strip ST1. By setting the third branch BR3, the current flowing between the seventh electrode EE7 and the second electrode EE2 can be concentrated within the range defined by the third branch BR3 and a portion of the first strip ST1. By setting the fourth branch BR4, the current flowing between the eighth electrode EE8 and the second electrode EE2 can be concentrated within the range defined by the fourth branch BR4 and a portion of the first strip ST1. This improves the stability and controllability of the motion of the first, second, and third magnetic skyrmions, increases the current driving efficiency, and enhances the performance of the magnetic skyrmion arithmetic unit. For example, to facilitate the current flowing between the seventh electrode EE7 and the second electrode EE2 through the second region R2, the second region R2 is at least partially located in the third branch BR3. For example, at least a portion of the second region R2 is located in the first strip ST1, so that the second region R2 is close enough to the first region R1 that the second magnetic skyrmion exerts the aforementioned first repulsive force on the first magnetic skyrmion. For example, to facilitate the flow of current between the eighth electrode EE8 and the second electrode EE2 through the fourth region R4, the fourth region R4 is at least partially located in the fourth branch BR4. For example, at least part of the fourth region R4 is located in the first strip ST1, so that the fourth region R4 is close enough to the first region R1 that the third magnetic skyrmion exerts the aforementioned second repulsive force on the first magnetic skyrmion.

[0062] For example, see Figure 3In the magnetic skyrmion arithmetic unit according to an embodiment of the present disclosure, the substrate layer 1 is provided with pits PN' corresponding to the first region R1, the second region R2, the third region R3, the fourth region R4, and the fifth region R5, respectively, and the magnetic layer 2a is recessed corresponding to the pits PN'; the substrate layer 1 is provided with a groove TN' corresponding to the region between the first region R1 and the third region R3, the groove TN' connecting the pits PN' corresponding to the first region R1 and the third region R3, and the magnetic film stack 2 is recessed corresponding to the groove TN'; the substrate layer 1 is provided with a groove TN' corresponding to the region between the first region R1 and the fifth region R5, the groove TN' connecting the pits PN' corresponding to the first region R1 and the fifth region R5, and the magnetic film stack 2 is recessed corresponding to the groove TN'. (Refer to reference...) Figure 1 Similarly, the pit PN' is provided to facilitate the stable placement of the first to third magnetic skyrmions at the low-energy pit PN', respectively. The combination of pit PN' and groove TN' is to ensure the stable and controllable movement of the first magnetic skyrmion from the first region R1 to the third region R3 or the fifth region R5, which will not be elaborated further here. For example, no groove TN' is provided between the first region R1 and each of the second region R2 and the fourth region R4, no groove TN' is provided between the third region R3 and each of the second region R2 and the fourth region R4, and no groove TN' is provided between the fifth region R5 and each of the second region R2 and the fourth region R4, to ensure the stable movement of the first magnetic skyrmion from the first region R1 to the third region R3 or the fifth region R5, avoiding unnecessary complications.

[0063] For example, see Figures 1 to 4 In the magnetic skyrmion arithmetic unit according to embodiments of the present disclosure, the maximum size of the opening of the pit PN' is less than or equal to 1.5 times the diameter of the corresponding magnetic skyrmion at the pit PN'. This ensures that only one magnetic skyrmion can be accommodated at the location of one pit PN', preventing the aggregation of multiple magnetic skyrmions at the pit PN' and thus avoiding logical or probabilistic operational disorder, thereby guaranteeing the normal operation of the magnetic skyrmion arithmetic unit according to embodiments of the present disclosure. More preferably, the maximum size of the opening of the pit PN' is less than or equal to the diameter of the magnetic skyrmion to further ensure that only one magnetic skyrmion can be accommodated at the location of one pit PN'.

[0064] For example, see Figure 5In the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure, the depth H1 of the pit PN' is greater than the depth H2 of the groove TN', and the depth difference between the pit PN' and the groove TN' is on the same order of magnitude as the thickness of the magnetic layer 2a. If the depth difference between the pit PN' and the groove TN' is too small, the energy difference of the first magnetic skyrmion at the pit PN' and the groove TN' will not be significant, causing the first magnetic skyrmion to potentially remain at the groove TN' during movement and not reach the pit PN', which is detrimental to stably controlling the first magnetic skyrmion to move to the desired third region R3. If the depth difference between the pit PN' and the groove TN' is too large, it may cause the magnetic layer 2a to break or become discontinuous, preventing the magnetic skyrmion from moving. Therefore, considering all factors, the embodiment of this disclosure sets the depth difference between the pit PN' and the groove TN' to be on the same order of magnitude as the thickness of the magnetic layer 2a. For example, the depth difference and the thickness of the magnetic layer 2a are both on the nanometer scale. For example, the depth difference and the thickness of the magnetic layer 2a are both on the micrometer scale. According to the embodiments of this disclosure, there are design requirements only for the depth difference between the recess PN' and the groove TN', while there are no restrictions on the depth of the recess PN' and the groove TN' themselves, which increases the design flexibility.

[0065] For example, the magnetic skyrmion arithmetic unit according to an embodiment of this disclosure further includes a magnetic skyrmion generating device, which includes: a recess disposed in the substrate layer 1; a control electrode pair, including two control electrodes EG, respectively electrically connected to the magnetic film stack 2, wherein the recess of the magnetic skyrmion generating device is disposed between the two control electrodes EG, so that the current flowing between the two control electrodes EG passes through the recess of the magnetic skyrmion generating device; and a magnetic field applying member, which applies a magnetic field to the magnetic film stack 2, the direction of the magnetic field being parallel to the depth direction of the recess of the magnetic skyrmion generating device. For example, in Figure 1 and Figure 2 The diagram schematically shows two control electrodes EG and a recess belonging to the skyrmion generating device located between the two control electrodes. Figure 1 and Figure 2 In the diagram, since the magnetic film stack 2 covers the substrate layer 1, the magnetic film stack 2 is shown to correspond to the pit PN. Figure 1 and Figure 2The magnetic field applicator is not shown, but it is understood that it can be a magnet, a current-carrying coil, etc., and can be manually placed at a suitable position relative to the magnetic skyrmion arithmetic unit, as long as the magnetic field it provides reaches the recess of the magnetic skyrmion arithmetic unit and its direction meets the above requirements. At the recess position of the magnetic skyrmion generating device, the overall energy of the magnetic skyrmion is reduced, making it easier to generate magnetic skyrmions at the position corresponding to the recess. Furthermore, with the cooperation of the magnetic field provided by the magnetic field applicator and the current provided by the two control electrodes EG, magnetic skyrmions can be generated only at the recess through which the current flows, enabling the electronic device according to the embodiments of this disclosure to stably and controllably generate magnetic skyrmions at predetermined positions. For example, see... Figure 1 and Figure 2 The two control electrodes EG intersect with the first stripe ST1 of the magnetic film stack. See, for example, [link to documentation]. Figure 1 and Figure 2 First, under the combined action of a magnetic field and an electric current, a first magnetic skyrmion is generated at the recess of the magnetic skyrmion generating device. Then, a current pulse is applied between the first electrode EE1 and the second electrode EE2, driving the generated first magnetic skyrmion to move to the first region R1. Similarly, magnetic skyrmion generating devices can be respectively provided corresponding to the second strip ST2, the first branch BR1, the second branch BR2, the third branch BR3, and the fourth branch BR4, so that the second region R2 can have a second magnetic skyrmion, and the fourth region R4 can have a third magnetic skyrmion. Therefore, the magnetic skyrmion arithmetic unit according to the embodiments of this disclosure achieves both controllable movement and controllable generation of magnetic skyrmions, thereby ensuring the stable and reliable implementation of logical operations, probability operations, and other computational functions. Figure 1 In this embodiment, the recesses belonging to the magnetic skyrmion generating device are different from the recesses in the first region R1, the second region R2, the third region R3, and the fourth region R4. This allows for a more reasonable planar layout of the magnetic skyrmion arithmetic unit and avoids unnecessary inter-structural interference. However, it should be noted that the embodiments disclosed herein are not limited to this. The recesses belonging to the magnetic skyrmion generating device can be reused as recesses in one of the first region R1, the second region R2, and the fourth region R4. For example, if the recesses belonging to the magnetic skyrmion generating device can be reused as recesses in the first region R1, then the magnetic skyrmion generating device can directly generate the first magnetic skyrmion in the first region R1.

[0066] The above are merely exemplary embodiments of this disclosure and are not intended to limit the scope of protection of this disclosure, which is determined by the appended claims.

Claims

1. A magnetic skyrmion arithmetic unit, comprising: basal layer; A magnetic film stack disposed on the substrate and including at least a magnetic layer, the magnetic film stack including a first region, a second region and a third region, wherein a first magnetic skyrmion is present in the first region; as well as The first electrode and the second electrode are electrically connected to the magnetic film stack, respectively, and are configured such that a current flowing therebetween passes through the first region and the third region, wherein... The second region has a first state in which the second region has a second magnetic skyrmion and the first magnetic skyrmion is subjected to a first repulsive force from the second magnetic skyrmion; The second region has a second state in which the second region does not have the second magnetic skyrmion and the first magnetic skyrmion is not subject to the first repulsive force; In the direction from the first region to the third region, the second region is located between the first region and the third region; When the second region is in the first state, the first repulsive force is greater than the driving force of the current flowing between the first electrode and the second electrode applied to the first magnetic skyrmion. When the second region is in the second state, the driving force drives the first magnetic skyrmion to move from the first region to the third region.

2. The magnetic skyrmion arithmetic unit according to claim 1, further comprising: The third and fourth electrodes, among which... The magnetic film stack includes a first strip and a second strip, which intersect each other and are integrally formed; The first region and the third region belong to the first strip, and the first electrode and the second electrode are respectively connected to the two ends of the first strip in its extension direction, so that the current flowing between the first electrode and the second electrode passes through the first region and the third region. The third electrode and the fourth electrode are respectively connected to the two ends of the second strip in its extending direction, so that the current flowing between the third electrode and the fourth electrode passes through the second region.

3. The magnetic skyrmion arithmetic unit according to claim 1, wherein, The base layer is provided with pits corresponding to the first region, the second region, and the third region, and the magnetic layer is recessed corresponding to the pits. The substrate layer has a groove in the area between the first region and the third region, the groove connecting the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed in the groove.

4. A magnetic skyrmion arithmetic unit, comprising: basal layer; A magnetic film stack disposed on the substrate and including at least a magnetic layer, the magnetic film stack including a first region, a second region, a third region and a fourth region, wherein a first magnetic skyrmion is present in the first region; as well as The first electrode and the second electrode are electrically connected to the magnetic film stack, respectively, and are configured such that a current flowing therebetween passes through the first region and the third region, wherein... The second region has a first state in which the second region has a second magnetic skyrmion and the first magnetic skyrmion is subjected to a first repulsive force from the second magnetic skyrmion; The second region has a second state in which the second region does not have the second magnetic skyrmion and the first magnetic skyrmion is not subject to the first repulsive force; The lines connecting the first region, the second region, and the third region form a triangle, and the lines connecting the first region, the third region, and the fourth region form a triangle, with the second region and the fourth region located on opposite sides of the line connecting the first region and the third region. The fourth region has a first state in which the fourth region has a third magnetic skyrmion and the first magnetic skyrmion is subjected to a second repulsive force from the third magnetic skyrmion. The fourth region has a second state in which the fourth region does not have the third magnetic skyrmion and the first magnetic skyrmion is not subject to the second repulsive force. In the direction from the first region to the third region, the second region and the fourth region are located between the first region and the third region; When the second region is in the first state and the fourth region is in the first state, the resultant force of the first repulsive force and the second repulsive force is greater than the driving force of the current flowing between the first electrode and the second electrode applied to the first magnetic skyrmion. When the second region is in the second state and the fourth region is in the second state, the driving force drives the first magnetic skyrmion to move from the first region to the third region.

5. The magnetic skyrmion arithmetic unit according to claim 4, wherein, When the second region is in the first state and the fourth region is in the second state, the first repulsive force is greater than the driving force. and When the second region is in the second state and the fourth region is in the first state, the second repulsive force is greater than the driving force.

6. The magnetic skyrmion arithmetic unit according to claim 5, wherein, The distance between the edge of the second region toward the fourth region and the edge of the fourth region toward the second region is less than the diameter of each of the first magnetic skyrmion, the second magnetic skyrmion, and the third magnetic skyrmion.

7. The magnetic skyrmion arithmetic unit according to claim 4, wherein, When the second region is in the first state and the fourth region is in the second state, the first repulsive force is less than the driving force; and When the second region is in the second state and the fourth region is in the first state, the second repulsive force is less than the driving force.

8. The magnetic skyrmion arithmetic unit according to claim 7, wherein, The distance between the edge of the second region toward the fourth region and the edge of the fourth region toward the second region is greater than the diameter of each of the first magnetic skyrmion, the second magnetic skyrmion and the third magnetic skyrmion and less than twice that diameter.

9. The magnetic skyrmion arithmetic unit according to claim 4, further comprising: The fifth and sixth electrodes, among which, The magnetic film stack includes a first strip and a first branch and a second branch that branch off from the first strip, with the first branch and the second branch located on opposite sides of the first strip, respectively. The first region and the third region belong to the first strip, and the first electrode and the second electrode are respectively connected to the two ends of the first strip in its extension direction, so that the current flowing between the first electrode and the second electrode passes through the first region and the third region. The fifth electrode is connected to the end of the first branch away from the first strip, so that the current flowing between the fifth electrode and the second electrode passes through the second region; The sixth electrode is connected to the end of the second branch away from the first strip, so that the current flowing between the sixth electrode and the second electrode passes through the fourth region.

10. The magnetic skyrmion arithmetic unit according to claim 4, wherein, The base layer has pits corresponding to the first region, the second region, the third region, and the fourth region, and the magnetic layer is recessed corresponding to the pits; The substrate layer has a groove in the area between the first region and the third region, the groove connecting the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed in the groove.

11. The magnetic skyrmion arithmetic unit according to claim 4, wherein, The magnetic film stack also includes a fifth region; In the current direction, at least a portion of each of the second region and the fourth region is located on a first side of the first region, and the third region and the fifth region are located on a second side of the first region opposite to the first side, wherein the current direction is the direction of the current flowing between the first electrode and the second electrode; Relative to the auxiliary line parallel to the current direction and passing through the first region, the second region and the third region are located on the first side of the auxiliary line, and the fourth region and the fifth region are located on the second side of the auxiliary line opposite to the first side; The distance between the second region and the first region is different from the distance between the fourth region and the first region, and the angle between the line connecting the first region and the third region and the auxiliary line is different from the angle between the line connecting the first region and the fifth region and the auxiliary line.

12. The magnetic skyrmion arithmetic unit according to claim 11, further comprising: The seventh and eighth electrodes, among which, The magnetic film stack includes a first strip and a third branch and a fourth branch branching from the first strip, the third branch and the fourth branch being located on both sides of the first strip; The first region, the third region, and the fifth region belong to the first strip, and the first electrode and the second electrode are respectively connected to the two ends of the first strip in its extension direction, so that the current flowing between the first electrode and the second electrode passes through the first region, the third region, and the fifth region; The seventh electrode is connected to the end of the third branch away from the first strip, so that the current flowing between the seventh electrode and the second electrode passes through the second region; The eighth electrode is connected to the end of the fourth branch away from the first strip, so that the current flowing between the eighth electrode and the second electrode passes through the fourth region.

13. The magnetic skyrmion arithmetic unit according to claim 11, wherein, The base layer is provided with pits corresponding to the first region, the second region, the third region, the fourth region, and the fifth region, and the magnetic layer is recessed corresponding to the pits; The substrate layer has a groove in the area between the first region and the third region, the groove connecting the pits corresponding to the first region and the pits corresponding to the third region, and the magnetic film stack is recessed in the groove. The substrate layer has a groove in the area between the first region and the fifth region, the groove connecting the pits corresponding to the first region and the pits corresponding to the fifth region, and the magnetic film stack is recessed in the groove.

14. The magnetic skyrmion arithmetic unit according to claim 10 or 13, wherein, The maximum size of the opening of the pit is less than or equal to 1.5 times the diameter of the corresponding magnetic skyrmion at the pit; and The depth of the pit is greater than the depth of the groove, and the depth difference between the pit and the groove is on the same order of magnitude as the thickness of the magnetic layer.

15. The magnetic skyrmion arithmetic unit according to any one of claims 4-13, further comprising a magnetic skyrmion generating device, wherein, The magnetic skyrmion generating device includes: The pit is provided in the base layer; The control electrode pair includes two control electrodes, which are electrically connected to the magnetic film stack respectively. The recess of the magnetic skyrmion generating device is disposed between the two control electrodes so that the current flowing between the two control electrodes passes through the recess of the magnetic skyrmion generating device. A magnetic field applicator applies a magnetic field to the magnetic film stack, the direction of which is parallel to the depth direction of the pit in the magnetic skyrmion generating device.

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