A passivated contact recombination layer for a solar cell and a method of making and using the same

By employing a layered design with multiple tunneling oxide layers and doped polycrystalline silicon layers, the problem of metal electrode sintering penetration was solved, improving the conversion efficiency and current conversion efficiency of TOPCon cells and simplifying the fabrication process.

CN117059679BActive Publication Date: 2026-05-29ZHONGHUAN XINNENG (ANHUI) ADVANCED BATTERY MFG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHONGHUAN XINNENG (ANHUI) ADVANCED BATTERY MFG CO LTD
Filing Date
2023-08-16
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In the existing passivation contact structure of TOPCon cells, the problem of metal electrode sintering through the doped polycrystalline silicon layer leads to an excessively thick doped polycrystalline silicon layer, which affects the cell efficiency. Furthermore, the light absorption effect of doped polycrystalline silicon is severe, making it difficult to balance passivation effect and current conversion efficiency.

Method used

A layered design of multilayer tunneling oxide layer and doped polysilicon layer is adopted. By adjusting the doping concentration and thickness of different layers, a first doped polysilicon layer with high doping and low thickness and a second doped polysilicon layer with low doping and high thickness are formed, which avoids metal electrode sintering through and omits silicon nitride layer to form ohmic contact.

Benefits of technology

This improved the open-circuit voltage and short-circuit current of the solar cell, reduced the light absorption of the doped polycrystalline silicon layer, enhanced the cell's conversion efficiency, and simplified the fabrication process.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application relates to the technical field of solar cells, in particular to a passivated contact composite layer of a solar cell and a preparation method and application thereof. The passivated contact composite layer covers the back surface of a silicon substrate, a plurality of metal electrodes are arranged in the passivated contact composite layer, the passivated contact composite layer comprises at least two layers of tunneling oxide layers and at least two layers of doped polysilicon layers, the at least two layers of tunneling oxide layers and the doped polysilicon layers are arranged alternately, at least one layer of tunneling oxide layer is arranged on the top surface of the passivated contact composite layer, and at least one layer of doped polysilicon layer is arranged on the bottom surface of the passivated contact composite layer; the doping concentration of the at least two layers of doped polysilicon layers gradually decreases from high to low along the passivated contact composite layer, and the thickness gradually increases from high to low along the passivated contact composite layer; the passivated contact composite layer can effectively reduce the thickness of the doped polysilicon layer in ohmic contact with the metal electrode under the premise of avoiding sintering penetration of the metal electrode, so that the conversion efficiency of the solar cell is improved.
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