High frequency module and communication device

Abstract

Inhibiting the decrease in isolation in the case of simultaneously transmitting transmission signals in different frequency bands. A high-frequency module (1) is provided with a first power amplifier, a second power amplifier, a first switch (20), a second switch (30), a third switch (40), and a mounting substrate (100). The first switch (20), the second switch (30), and the third switch (40) are configured to be able to simultaneously connect the first power amplifier and the second power amplifier to an antenna terminal. When viewed from the thickness direction (D1) of the mounting substrate (100), the first switch (20) is disposed between the second switch (30) and the third switch (40). The second switch (30) and the third switch (40) are disposed on the same main surface of the first main surface (101) and the second main surface (102) of the mounting substrate (100).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module and a communication device for amplifying a first transmitted signal and a second transmitted signal. Background Technology

[0002] Previously, a device for selecting a frequency band was known (for example, see Patent Document 1). The front-end module (FET) of Patent Document 1 includes an SPDT (Single-Pole Double Throw) switch (first switch), two SP4T (Single-Pole 4 Throw) switches (second and third switches), and eight SAW filters. The first switch switches the connection between the antenna and the second switch, and also switches the connection between the antenna and the third switch. The second switch is connected to the first switch. The second switch selects one of the four SAW filters as the connection destination for the first switch. The third switch is connected to the first switch. The third switch selects one of four SAW filters different from the aforementioned four SAW filters as the connection destination for the first switch.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-092201 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] Furthermore, there is a need to simultaneously transmit multiple signals in different frequency bands. For example, in the FET of Patent Document 1, the first switch connects the second and third switches simultaneously to different SAW filters. Thus, the FET of Patent Document 1 simultaneously transmits the transmission signal through one SAW filter connected to the second switch and the transmission signal through one SAW filter connected to the third switch. However, in the FET of Patent Document 1, the isolation may decrease when simultaneously transmitting multiple transmission signals in different frequency bands.

[0008] The present invention was made in view of the above-mentioned problems, and its object is to provide a high-frequency module and communication device that can suppress the decrease in isolation when transmitting multiple transmission signals in different frequency bands at the same time.

[0009] Solution for solving the problem

[0010] One embodiment of the present invention relates to a high-frequency module comprising a first power amplifier, a second power amplifier, a first switch, a second switch, a third switch, and a mounting substrate. The first power amplifier amplifies a first transmitted signal in a first frequency band. The second power amplifier amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch is connected to an antenna terminal. The second switch switches the connection between the first power amplifier and the first switch. The third switch switches the connection between the second power amplifier and the first switch. The mounting substrate has a first main surface and a second main surface facing each other, and the first power amplifier, the second power amplifier, the first switch, the second switch, and the third switch are disposed on the mounting substrate. The first switch, the second switch, and the third switch are configured to allow simultaneous connection of the first power amplifier and the second power amplifier to the antenna terminal. When viewed from the thickness direction of the mounting substrate, the first switch is disposed between the second switch and the third switch. The second switch and the third switch are disposed on the same main surface of the first main surface and the second main surface of the mounting substrate.

[0011] One embodiment of the present invention relates to a high-frequency module comprising a first power amplifier, a second power amplifier, a first switch, a second switch, a third switch, and a mounting substrate. The first power amplifier amplifies a first transmitted signal in a first frequency band. The second power amplifier amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch is connected to an antenna terminal. The second switch switches the connection between the first power amplifier and the first switch. The third switch switches the connection between the second power amplifier and the first switch. The mounting substrate has a first main surface and a second main surface facing each other, and the first power amplifier, the second power amplifier, the first switch, the second switch, and the third switch are disposed on the mounting substrate. The first switch, the second switch, and the third switch are configured to simultaneously connect the first power amplifier and the second power amplifier to the antenna terminal. The second switch and the third switch are disposed on different main surfaces of the first and second main surfaces of the mounting substrate.

[0012] One aspect of the present invention relates to a communication device comprising: the high-frequency module; and a signal processing circuit that processes the first transmission signal and the second transmission signal to be transmitted through the high-frequency module.

[0013] The effects of the invention

[0014] According to the high-frequency module and communication device of the present invention, when transmitting signals in different frequency bands simultaneously, the decrease in isolation can be suppressed. Attached Figure Description

[0015] Figure 1 This is a schematic circuit diagram illustrating a high-frequency module involved in one embodiment.

[0016] Figure 2 This is a top view showing the arrangement of electronic components on the first main surface of the mounting substrate of the aforementioned high-frequency module.

[0017] Figure 3 This is a top view obtained by viewing the arrangement of electronic components on the second main surface of the mounting substrate of the aforementioned high-frequency module from the first main surface of the mounting substrate.

[0018] Figure 4 This illustrates the aforementioned high-frequency module. Figure 2 Cross-sectional view of line X1-X1.

[0019] Figure 5 This is a cross-sectional view of a high-frequency module according to a variation of embodiment 1.

[0020] Figure 6 This is a cross-sectional view of a high-frequency module involved in a variation of embodiment 2.

[0021] Figure 7 This is a cross-sectional view of a high-frequency module involved in a variation of embodiment 3.

[0022] Figure 8 This is a cross-sectional view of a high-frequency module involved in another variation of one implementation method, Variation 3.

[0023] Figure 9 This is a top view showing the arrangement of electronic components on the first main surface of the mounting substrate of a high-frequency module according to a variation 3 of an embodiment. Detailed Implementation

[0024] The following implementation methods, etc., refer to Figures 2-9 All diagrams are schematic and the size and thickness ratios of the structural elements shown may not reflect the actual dimensions.

[0025] (Implementation Method)

[0026] Next, use Figures 1-4 This embodiment will be used to explain the high-frequency module 1 and the communication device 500.

[0027] (1) Summary

[0028] like Figure 1 As shown, the high-frequency module 1 includes a first power amplifier 81, a second power amplifier 82, a first switch 20, a second switch 30, and a third switch 40. The first power amplifier 81 amplifies a first transmitted signal in a first frequency band. The second power amplifier 82 amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch 20 is connected to antenna terminals (here, the first antenna terminal 11 and the second antenna terminal 12). The second switch 30 switches the connection between the first power amplifier 81 and the first switch 20. The third switch 40 switches the connection between the second power amplifier 82 and the first switch 20.

[0029] And, as Figure 4 As shown, the high-frequency module 1 includes a mounting substrate 100, a first resin layer 120, and a second resin layer 125. The mounting substrate 100 has a first main surface 101 and a second main surface 102 facing each other in the thickness direction D1 of the mounting substrate 100. A first power amplifier 81, a second power amplifier 82, a first switch 20, a second switch 30, and a third switch 40 are disposed on the mounting substrate 100.

[0030] The high-frequency module 1 involved in this embodiment is used, for example, to support a multi-mode / multi-band communication device 500. The communication device 500 is, for example, a portable telephone (e.g., a smartphone), but is not limited to this; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module capable of supporting 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The first switch 20 is configured to simultaneously connect the first power amplifier 81 and the second power amplifier 82 to the antenna terminal. That is, the high-frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity. Here, carrier aggregation and dual connectivity refer to communication using radio waves from multiple frequency bands simultaneously.

[0031] The high-frequency module 1 involved in this embodiment simultaneously performs communication of signals in the frequency bands specified in 4G, as well as communication of signals in other frequency bands specified in 4G. The high-frequency module 1 simultaneously performs communication of signals in the frequency bands specified in 4G, as well as communication of signals in the frequency bands specified in 5G. The high-frequency module 1 simultaneously performs communication of signals in the frequency bands specified in 5G, as well as communication of signals in other frequency bands specified in 5G. Hereinafter, communication based on carrier aggregation or dual connectivity will also be referred to as simultaneous communication.

[0032] The high-frequency module 1 involved in this embodiment performs communication in the mid-frequency band (first band) and the high-frequency band (second band). In this embodiment, the high-frequency band specified in 4G can be, for example, Band41 (bandwidth 2496MHz to 2690MHz), and the mid-frequency band specified in 4G can be, for example, Band1 (bandwidth 1920MHz to 1980MHz). The high-frequency band specified in 5G can be, for example, n41 (bandwidth 2496MHz to 2690MHz), and the mid-frequency band specified in 5G can be, for example, n1 (bandwidth 1920MHz to 1980MHz). In addition, Band41 and n41 are used for Time Division Duplex (TDD) communication. Band1 and n1 are used for Frequency Division Duplex (FDD) communication. Furthermore, bands defined as high-frequency bands in 4G, such as Band40, can also be used. Additionally, bands defined as mid-frequency bands in 4G, such as Band3, Band2, Band25, Band4, Band66, Band39, or Band34, can also be used. For example, n3 can be used as a mid-frequency band defined in 5G.

[0033] In this embodiment, the high-frequency module 1 is capable of simultaneous communication based on carrier aggregation or dual connectivity. Therefore, the high-frequency module 1 can simultaneously transmit using the frequency bands specified in 4G (or 5G) and transmit using the frequency bands specified in 4G (or 5G). The high-frequency module 1 can simultaneously receive using the frequency bands specified in 4G (or 5G) and receive using the frequency bands specified in 4G (or 5G). Furthermore, the high-frequency module 1 can simultaneously transmit using the frequency bands specified in 4G (or 5G) and receive using the frequency bands specified in 4G (or 5G). The high-frequency module 1 can simultaneously receive using the frequency bands specified in 4G (or 5G) and transmit using the frequency bands specified in 4G (or 5G).

[0034] In this embodiment, the first transmission filter 61 allows the transmission signal (first transmission signal) of the mid-frequency band (first frequency band) to pass through. The second transmission filter 62 allows the transmission signal (second transmission signal) of the high-frequency band (second frequency band), which is a frequency band different from the first frequency band, to pass through.

[0035] like Figure 1As shown, the high-frequency module 1 further includes a first transmitting filter 61, a second transmitting filter 62, a first receiving filter 63, and a second receiving filter 64. The first receiving filter 63 allows the received signal (first received signal) in the intermediate frequency band to pass through. The second receiving filter 64 allows the received signal (second received signal) in the high-frequency band, which is a frequency band different from the intermediate frequency band, to pass through. That is, the second receiving filter 64 allows the received signal (second received signal) in a frequency band different from the frequency band of the first received signal to pass through.

[0036] (2) Structure

[0037] Below, refer to Figures 1-4 The structure of the high-frequency module 1 and the communication device 500 involved in this embodiment will be explained.

[0038] High-frequency module 1 is configured, for example, to receive signals from signal processing circuit 501 (see reference 501). Figure 1 The input transmitted signal (high-frequency signal) is amplified and output to the first antenna 511 and the second antenna 512. The high-frequency module 1 is configured, for example, to amplify the received signal (high-frequency signal) input from the first antenna 511 and the second antenna 512 and output it to the signal processing circuit 501. The signal processing circuit 501 is not a structural element of the high-frequency module 1, but rather a structural element of the communication device 500 equipped with the high-frequency module 1. The high-frequency module 1 is controlled, for example, by the signal processing circuit 501 of the communication device 500. The communication device 500 includes the high-frequency module 1 and the signal processing circuit 501. The communication device 500 also includes the first antenna 511 and the second antenna 512. The communication device 500 also includes a circuit board on which the high-frequency module 1 is mounted. The circuit board is, for example, a printed circuit board. The circuit board has a ground electrode to which a ground potential is provided.

[0039] The signal processing circuit 501 processes the signals (e.g., received signals and transmitted signals) passing through the high-frequency module 1. The signal processing circuit 501 includes, for example, an RF signal processing circuit 502 and a baseband signal processing circuit 503. The RF signal processing circuit 502 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes the high-frequency signal. For example, the RF signal processing circuit 502 performs up-conversion or other signal processing on the high-frequency signal (transmitted signal) output from the baseband signal processing circuit 503 and outputs the processed high-frequency signal. Additionally, the RF signal processing circuit 502 performs down-conversion or other signal processing on the high-frequency signal (received signal) output from the high-frequency module 1 and outputs the processed high-frequency signal to the baseband signal processing circuit 503.

[0040] The baseband signal processing circuit 503 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 503 generates I-phase and Q-phase signals based on the baseband signal. The baseband signal can be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 503 performs IQ modulation processing by combining the I-phase and Q-phase signals and outputs a transmit signal. At this time, the transmit signal is generated as a modulated signal (IQ signal) obtained by amplitude modulation of a carrier signal of a specified frequency with a period longer than the period of the carrier signal. The received signal, processed in the baseband signal processing circuit 503, is used, for example, as an image signal for image display or as an audio signal for communication. In this embodiment, the high-frequency module 1 transmits high-frequency signals (received signals) between the first antenna 511 and the second antenna 512 and the RF signal processing circuit 502 of the signal processing circuit 501.

[0041] like Figure 1 As shown, the high-frequency module 1 includes a first antenna terminal 11, a second antenna terminal 12, a first switch 20, a second switch 30, and a third switch 40. Additionally, as... Figure 1 As shown, the high-frequency module 1 includes a first matching circuit 51, a second matching circuit 52, a third matching circuit 53, a fourth matching circuit 54, a first transmitting filter 61, a second transmitting filter 62, a first receiving filter 63, and a second receiving filter 64. Furthermore, as... Figure 1 As shown, the high-frequency module 1 includes a fifth matching circuit 71, a sixth matching circuit 72, a seventh matching circuit 73, an eighth matching circuit 74, a first power amplifier 81, a second power amplifier 82, a first low-noise amplifier 83, and a second low-noise amplifier 84. The high-frequency module 1 also includes a first input terminal 91, a second input terminal 92, a first output terminal 93, and a second output terminal 94.

[0042] The first antenna terminal 11 is electrically connected to the first antenna 511. The second antenna terminal 12 is electrically connected to the second antenna 512. Here, "A and B connection" includes not only contact between A and B, but also electrical connection between A and B via conductor electrodes, conductor terminals, wiring or other circuit components.

[0043] The first switch 20 is configured to connect the first antenna 511 to the second switch 30 and the second antenna 512 to the third switch 40. That is, the first switch 20 is configured to simultaneously connect the first antenna 511 and the second antenna 512 to the second switch 30 and the third switch 40.

[0044] The first switch 20 is electrically connected to the antenna terminal. Specifically, the first switch 20 is electrically connected to the first antenna terminal 11 and the second antenna terminal 12. The first switch 20 is also electrically connected to the second switch 30 and the third switch 40. Specifically, the first switch 20 has a first terminal 21, a second terminal 22, a third terminal 23, and a fourth terminal 24. The first switch 20 is controlled by the signal processing circuit 501 to perform connection operations (opening and closing operations) between the first terminal 21 and the second terminal 22 or between the first terminal 21 and the fourth terminal 24, and between the third terminal 23 and the fourth terminal 24 or between the third terminal 23 and the second terminal 22. The first terminal 21 is electrically connected to the first antenna terminal 11. That is, the first terminal 21 is electrically connected to the first antenna 511 via the first antenna terminal 11. The third terminal 23 is electrically connected to the second antenna terminal 12. In other words, terminal 23 is electrically connected to the second antenna 512 via terminal 12. Furthermore, the connection between terminal 21 and the first antenna 511 is not limited to a direct connection. A filter or coupler may be provided between terminal 21 and the first antenna 511. Similarly, the connection between terminal 23 and the second antenna 512 is not limited to a direct connection. A filter or coupler may be provided between terminal 23 and the second antenna 512. Terminal 22 is electrically connected to the second switch 30. Terminal 24 is electrically connected to the third switch 40.

[0045] The second switch 30 is electrically connected to the first transmitting filter 61 and the first receiving filter 63. The second switch 30 is also electrically connected to the first switch 20. Specifically, the second switch 30 has a common terminal 31 and multiple (three in the example) selection terminals 32, 33, and 34. The second switch 30, under the control of the signal processing circuit 501, selects at least one of the multiple selection terminals 32, 33, and 34 as the connection destination of the common terminal 31. The common terminal 31 is electrically connected to the second terminal 22 of the first switch 20. That is, the common terminal 31 is electrically connected to the first antenna terminal 11 via the first switch 20. In other words, the common terminal 31 is electrically connected to the first antenna 511 via the first antenna terminal 11. The selection terminal 32 is electrically connected to the first transmitting filter 61 and the first receiving filter 63. Due to the accompanying drawings, the connection destinations of the selection terminals 33 and 34 are omitted. The connection destinations of terminals 33 and 34 are electrically connected to the transmitting and receiving filters that allow signals to pass through the following frequency band: this frequency band is a mid-frequency band and is a different frequency band from the frequency band through which signals pass in the first transmitting filter 61 and the first receiving filter 63.

[0046] The third switch 40 is electrically connected to the second transmit filter 62 and the second receive filter 64. The third switch 40 is also electrically connected to the first switch 20. Specifically, the third switch 40 has a common terminal 41 and multiple (three in the example) selectable terminals 42, 43, and 44. The third switch 40, under the control of the signal processing circuit 501, selects at least one of the selectable terminals 42, 43, and 44 as the connection destination of the common terminal 41. The common terminal 41 is electrically connected to the fourth terminal 24 of the first switch 20. That is, the common terminal 41 is electrically connected to the second antenna terminal 12 via the first switch 20. In other words, the common terminal 41 is electrically connected to the second antenna 512 via the second antenna terminal 12. The selectable terminals 42 are electrically connected to the second transmit filter 62 and the second receive filter 64. For the sake of the accompanying drawings, the connection destinations of the selectable terminals 43 and 44 are omitted. The respective connection destinations of terminals 43 and 44 are electrically connected to the transmitting and receiving filters that allow signals to pass through the following frequency band: this frequency band is a high-frequency band and is a different frequency band from the frequency band through which signals pass in the second transmitting filter 62 and the second receiving filter 64.

[0047] The first switch 20 can be connected simultaneously to the second switch 30 and the third switch 40. Specifically, the first switch 20 is configured to connect the first power amplifier 81 and the second power amplifier 82 simultaneously to the antenna terminal. More specifically, the first switch 20 is configured to connect the first power amplifier 81 to the first antenna terminal 11 and the second power amplifier 82 to the second antenna terminal 12 simultaneously. That is, the first switch 20 can be connected simultaneously to the first transmit filter 61 and the second transmit filter 62. By connecting simultaneously to the first transmit filter 61 and the second transmit filter 62, simultaneous communication can be performed using the first transmit filter 61 and the second transmit filter 62. "Able to perform simultaneous communication" is defined as meaning that simultaneous communication is possible as long as it is a frequency band determined by the 3GPP LTE standard to be capable of simultaneous communication.

[0048] The first matching circuit 51 is, for example, an inductor. More specifically, the first matching circuit 51 is a chip inductor. The first matching circuit 51 is electrically connected in the path between the second switch 30 and the first transmitting filter 61 to achieve impedance matching between the second switch 30 and the first transmitting filter 61.

[0049] The second matching circuit 52 is, for example, an inductor. More specifically, the second matching circuit 52 is a chip inductor. The second matching circuit 52 is electrically connected in the path between the third switch 40 and the second transmitting filter 62 to achieve impedance matching between the third switch 40 and the second transmitting filter 62.

[0050] The third matching circuit 53 is, for example, an inductor. More specifically, the third matching circuit 53 is a chip inductor. The third matching circuit 53 is electrically connected in the path between the second switch 30 and the first receiving filter 63 to achieve impedance matching between the second switch 30 and the first receiving filter 63.

[0051] The fourth matching circuit 54 is, for example, an inductor. More specifically, the fourth matching circuit 54 is a chip inductor. The fourth matching circuit 54 is electrically connected in the path between the third switch 40 and the second receiving filter 64 to achieve impedance matching between the third switch 40 and the second receiving filter 64.

[0052] In this embodiment, the first matching circuit 51 and the third matching circuit 53 are integrated into a single chip, and the second matching circuit 52 and the fourth matching circuit 54 are integrated into a single chip. In this embodiment, the component after the first matching circuit 51 and the third matching circuit 53 are integrated into a single chip is called the first matching chip 50a, and the component after the second matching circuit 52 and the fourth matching circuit 54 are integrated into a single chip is called the second matching chip 50b.

[0053] The first transmitting filter 61 is a filter that allows the transmitting signal (first transmitting signal) in the mid-frequency band output from the first power amplifier 81 to pass through. The first transmitting filter 61 is electrically connected to the second switch 30 via the first matching circuit 51. That is, the first transmitting filter 61 is connected to the second switch 30 to allow the first transmitting signal to pass through. The first transmitting filter 61 is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The first transmitting filter 61 is, for example, an elastic wave filter. In an elastic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are each composed of elastic wave resonators. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In a SAW filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW (Surface Acoustic Wave) resonators. Furthermore, the first transmitting filter 61 is not limited to a SAW filter. The first transmitting filter 61 can be a SAW filter, or for example, a BAW (Bulk Acoustic Wave) filter. The resonator in the BAW filter is, for example, an FBAR (Film Bulk Acoustic Resonator) or an SMR (Solidly Mounted Resonator). The BAW filter has a substrate. The substrate of the BAW filter is, for example, a silicon substrate.

[0054] The second transmitting filter 62 is a filter that allows the transmitting signal (the second transmitting signal) in the high-frequency band output from the second power amplifier 82 to pass through. The second transmitting filter 62 is electrically connected to the third switch 40 via the second matching circuit 52. That is, the second transmitting filter 62 is connected to the third switch 40 to allow the second transmitting signal, which has a frequency band different from the first transmitting signal, to pass through. The second transmitting filter 62 is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The second transmitting filter 62 is, for example, an elastic wave filter. In an elastic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are each composed of elastic wave resonators. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In a SAW filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW resonators. Furthermore, the second transmitting filter 62 is not limited to a SAW filter. Besides being a SAW filter, the second transmitting filter 62 can also be, for example, a BAW filter.

[0055] The first receiving filter 63 is a filter that allows the received signal (first received signal) in the intermediate frequency band input to the first low-noise amplifier 83 to pass through. The first receiving filter 63 is electrically connected to the second switch 30 via the third matching circuit 53. That is, the first receiving filter 63 is connected to the second switch 30 to allow the first received signal to pass through. The first receiving filter 63 is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The first receiving filter 63 is, for example, an elastic wave filter. In an elastic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are each composed of elastic wave resonators. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In a SAW filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW resonators. Furthermore, the first receiving filter 63 is not limited to a SAW filter. Besides being a SAW filter, the first receiving filter 63 can also be, for example, a BAW filter.

[0056] The second receiving filter 64 is a filter that allows the received signal (the second received signal) in the high-frequency band input to the second low-noise amplifier 84 to pass through. The second receiving filter 64 is electrically connected to the third switch 40 via the fourth matching circuit 54. That is, the second receiving filter 64 is connected to the third switch 40 to allow the second received signal in a frequency band different from that of the first received signal to pass through. The second receiving filter 64 is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The second receiving filter 64 is, for example, an elastic wave filter. In an elastic wave filter, the multiple series-arm resonators and the multiple parallel-arm resonators are each composed of elastic wave resonators. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In a SAW filter, the multiple series-arm resonators and the multiple parallel-arm resonators are, for example, SAW resonators. Furthermore, the second receiving filter 64 is not limited to a SAW filter. The second receiving filter 64 can be a SAW filter, or for example, a BAW filter.

[0057] The fifth matching circuit 71 is, for example, an inductor. More specifically, the fifth matching circuit 71 is a chip inductor. The fifth matching circuit 71 is electrically connected in the path between the first transmitting filter 61 and the first power amplifier 81 to achieve impedance matching between the first transmitting filter 61 and the first power amplifier 81.

[0058] The sixth matching circuit 72 is, for example, an inductor. More specifically, the sixth matching circuit 72 is a chip inductor. The sixth matching circuit 72 is electrically connected in the path between the second transmitting filter 62 and the second power amplifier 82 to achieve impedance matching between the second transmitting filter 62 and the second power amplifier 82.

[0059] The seventh matching circuit 73 is, for example, an inductor. More specifically, the seventh matching circuit 73 is a chip inductor. The seventh matching circuit 73 is electrically connected in the path between the first receiving filter 63 and the first low-noise amplifier 83 to achieve impedance matching between the first receiving filter 63 and the first low-noise amplifier 83.

[0060] The eighth matching circuit 74 is, for example, an inductor. More specifically, the eighth matching circuit 74 is a chip inductor. The eighth matching circuit 74 is electrically connected in the path between the second receiving filter 64 and the second low-noise amplifier 84 to achieve impedance matching between the second receiving filter 64 and the second low-noise amplifier 84.

[0061] The first power amplifier 81 amplifies the mid-frequency band (first frequency band) transmission signal (first transmission signal) output by the RF signal processing circuit 502 of the signal processing circuit 501. The input terminal of the first power amplifier 81 is electrically connected to the first input terminal 91. The output terminal of the first power amplifier 81 is electrically connected to the fifth matching circuit 71. That is, the first power amplifier 81 is electrically connected to the first transmission filter 61 via the fifth matching circuit 71. In other words, the first power amplifier 81 is electrically connected to the second switch 30 via the first transmission filter 61.

[0062] The second power amplifier 82 amplifies the high-frequency band (second frequency band) transmission signal (second transmission signal) output by the RF signal processing circuit 502 of the signal processing circuit 501. The input terminal of the second power amplifier 82 is electrically connected to the second input terminal 92. The output terminal of the second power amplifier 82 is electrically connected to the sixth matching circuit 72. That is, the second power amplifier 82 is electrically connected to the second transmission filter 62 via the sixth matching circuit 72. In other words, the second power amplifier 82 is electrically connected to the third switch 40 via the second transmission filter 62.

[0063] The first low-noise amplifier 83 amplifies the received signal that has passed through the first receiving filter 63. The input terminal of the first low-noise amplifier 83 is electrically connected to the seventh matching circuit 73, and the output terminal of the first low-noise amplifier 83 is electrically connected to the first output terminal 93. That is, the first low-noise amplifier 83 is electrically connected to the first receiving filter 63 via the seventh matching circuit 73. In other words, the first low-noise amplifier 83 is electrically connected to the second switch 30 via the first receiving filter 63.

[0064] The second low-noise amplifier 84 amplifies the received signal that has passed through the second receiving filter 64. The input terminal of the second low-noise amplifier 84 is electrically connected to the eighth matching circuit 74, and the output terminal of the second low-noise amplifier 84 is electrically connected to the second output terminal 94. That is, the second low-noise amplifier 84 is electrically connected to the second receiving filter 64 via the eighth matching circuit 74. In other words, the second low-noise amplifier 84 is electrically connected to the third switch 40 via the second receiving filter 64.

[0065] The first input terminal 91, the second input terminal 92, the first output terminal 93, and the second output terminal 94 are connected to the RF signal processing circuit 502. Specifically, the first power amplifier 81 is electrically connected to the RF signal processing circuit 502 via the first input terminal 91. The second power amplifier 82 is electrically connected to the RF signal processing circuit 502 via the second input terminal 92. The first low-noise amplifier 83 is electrically connected to the RF signal processing circuit 502 via the first output terminal 93. The second low-noise amplifier 84 is electrically connected to the RF signal processing circuit 502 via the second output terminal 94.

[0066] The high-frequency module 1 also includes a mounting substrate 100, multiple (two in the example) external connection terminals 200, a first resin layer 120, and a second resin layer 125 (see reference). Figure 4 ).

[0067] The mounting substrate 100 has a first main surface 101 and a second main surface 102 facing each other in the thickness direction D1 of the mounting substrate 100.

[0068] The mounting substrate 100 is, for example, a printed circuit board, an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. Here, the mounting substrate 100 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers, and is a ceramic substrate. The multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D1 of the mounting substrate 100. The multiple conductive layers are formed in a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 100. The material of each conductive layer is, for example, copper. The multiple conductive layers include a ground layer. In the high-frequency module 1, one or more ground terminals included in the multiple external connection terminals 200 are electrically connected to the ground layer via conductive paths provided by the mounting substrate 100.

[0069] The mounting substrate 100 is not limited to printed circuit boards or LTCC substrates, but can also be a wiring structure. The wiring structure can be, for example, a multilayer structure. A multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. If there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. If there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first surface of two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 101 of the mounting substrate 100, and the second surface is the second main surface 102 of the mounting substrate 100. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate, or it can be a substrate constructed in a multilayer manner.

[0070] The first main surface 101 and the second main surface 102 of the mounting substrate 100 are separated in the thickness direction D1 of the mounting substrate 100 and intersect the thickness direction D1 of the mounting substrate 100. The first main surface 101 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but it may also include, for example, the side surface of the conductor portion, as a surface not orthogonal to the thickness direction D1. Similarly, the second main surface 102 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but it may also include, for example, the side surface of the conductor portion, as a surface not orthogonal to the thickness direction D1. Furthermore, fine irregularities or recesses or protrusions may be formed on the first main surface 101 and the second main surface 102 of the mounting substrate 100. When viewed from above in the thickness direction D1 of the mounting substrate 100, the mounting substrate 100 is rectangular in shape, but it is not limited to this; for example, it may also be square in shape. Here, viewing the mounting substrate 100 from above means viewing the mounting substrate 100 and the electronic components mounted on the mounting substrate 100 by projecting them onto a plane parallel to the main surface (e.g., the first main surface 101) of the mounting substrate 100.

[0071] The high-frequency module 1 includes multiple electronic components. These components include a first switch 20, a second switch 30, a third switch 40, a first matching chip 50a, a second matching chip 50b, a first transmitting filter 61, a second transmitting filter 62, a first receiving filter 63, a second receiving filter 64, fifth matching circuits 71 to eighth matching circuits 74, a first power amplifier 81, a second power amplifier 82, a first low-noise amplifier 83, and a second low-noise amplifier 84. The first matching chip 50a includes a first matching circuit 51 and a third matching circuit 53. The second matching chip 50b includes a second matching circuit 52 and a fourth matching circuit 54.

[0072] Multiple electronic components of the high-frequency module 1 are respectively mounted on the first main surface 101 or the second main surface 102 of the mounting substrate 100. That is, in the high-frequency module 1, multiple electronic components are respectively disposed on the first main surface 101 or the second main surface 102 of the mounting substrate 100. These multiple electronic components are not limited to components mounted on the mounting substrate 100, but may also include circuit elements disposed within the mounting substrate 100. Figure 4 The diagram of the multiple wirings consisting of the conductor portion and the through conductor of the mounting substrate 100 described above is omitted.

[0073] In this embodiment, the first matching chip 50a, the second matching chip 50b, the first transmitting filter 61, the second transmitting filter 62, the first receiving filter 63, the second receiving filter 64, the fifth matching circuit 71 to the eighth matching circuit 74, the first power amplifier 81, and the second power amplifier 82 are disposed on the first main surface 101 (see reference). Figure 2 Here, "electronic components (such as the first transmitting filter 61) are disposed on the first main surface 101" refers not only to electronic components being directly mounted on the first main surface 101, but also to electronic components being mechanically connected to the mounting substrate 100 and disposed in the space on the first main surface 101 side, which is separated from the space on the second main surface 102 side by the mounting substrate 100. In other words, this includes cases where electronic components are mounted on the first main surface 101 via other circuit elements, electrodes, etc.

[0074] The first switch 20, the second switch 30, the third switch 40, the first low-noise amplifier 83, and the second low-noise amplifier 84 are integrated into a single chip, thus forming the switch IC 300 (see reference). Figure 3 The switch IC 300 is mounted on the second main surface 102 of the mounting substrate 100 (see reference). Figure 3 That is, the second switch 30 and the third switch 40 are disposed on the same main surface (here, the second main surface 102) of the first main surface 101 and the second main surface 102 of the mounting substrate 100. Furthermore, the first switch 20 is disposed on the same main surface (here, the second main surface 102) as the main surface on which the second switch 30 and the third switch 40 are disposed. Here, "electronic components (the first switch 20, etc.) are disposed on the second main surface 102" refers not only to the electronic components being directly mounted on the second main surface 102, but also to the electronic components being mechanically connected to the mounting substrate 100 and disposed in the space on the second main surface 102 side, which is separated from the space on the first main surface 101 side by the mounting substrate 100. In other words, this includes cases where the electronic components are mounted on the second main surface 102 via other circuit elements, electrodes, etc.

[0075] Multiple external connection terminals 200 are disposed on the second main surface 102. More specifically, multiple external connection terminals 200 are disposed on the second main surface 102 of the mounting substrate 100. Each of the multiple external connection terminals 200 is composed of a columnar electrode. Furthermore, in Figure 3 The external connection terminal 200 is omitted.

[0076] The multiple external connection terminals 200 include a first antenna terminal 11, a second antenna terminal 12, one or more ground terminals, a first input terminal 91, a second input terminal 92, a first output terminal 93, and a second output terminal 94. The one or more ground terminals are connected to the ground plane of the mounting substrate 100 as described above. The ground plane is the circuit ground of the high-frequency module 1, and the multiple electronic components of the high-frequency module 1 include electronic components connected to the ground plane.

[0077] The first resin layer 120 covers a plurality of electronic components disposed on the first main surface 101 of the mounting substrate 100. Here, the first resin layer 120 seals the plurality of electronic components disposed on the first main surface 101 of the mounting substrate 100. The first resin layer 120 comprises a resin (e.g., epoxy resin). In addition to resin, the first resin layer 120 may also include fillers. Furthermore, in… Figure 2 The first resin layer 120 is omitted. Furthermore, in... Figure 3 The second resin layer 125 is omitted.

[0078] A second resin layer 125 is disposed on the second main surface 102 of the mounting substrate 100. The second resin layer 125 covers a plurality of electronic components mounted on the second main surface 102 of the mounting substrate 100, and a portion of each of a plurality of external connection terminals 200. The second resin layer 125 is formed such that the top surface of each of the plurality of external connection terminals 200 is exposed. The second resin layer 125 comprises a resin (e.g., epoxy resin). In addition to resin, the second resin layer 125 may also include fillers. The material of the second resin layer 125 may be the same as or a different material from the material of the first resin layer 120. Furthermore, in… Figure 3 The second resin layer 125 is omitted.

[0079] The following describes the configuration of the various electronic components in the high-frequency module 1. Here, the direction orthogonal to the first direction D1 (which is the thickness direction D1) is designated as the second direction D2 (refer to...). Figure 2 The direction orthogonal to both the first direction D1 and the second direction is designated as the third direction D3.

[0080] The fifth matching circuit 71 and the first power amplifier 81 are disposed adjacent to each other on the first main surface 101 along the second direction D2. The fifth matching circuit 71 is positioned in the second direction D2 at a position closer to the end of the mounting substrate 100 than the first power amplifier 81. The sixth matching circuit 72 and the second power amplifier 82 are disposed adjacent to each other on the first main surface 101 along the second direction D2. The sixth matching circuit 72 is positioned in the second direction D2 at a position closer to the end of the mounting substrate 100 than the second power amplifier 82. When the mounting substrate 100 is viewed from the third direction D3, the first power amplifier 81 and the second power amplifier 82 are disposed between the fifth matching circuit 71 and the sixth matching circuit 72 (see reference). Figure 2 Here, "the fifth matching circuit 71 and the first power amplifier 81 are adjacent along the second direction D2" means that there are no other electronic components between the fifth matching circuit 71 and the first power amplifier 81 along the second direction D2. Similarly, "the sixth matching circuit 72 and the second power amplifier 82 are adjacent along the second direction D2" means that there are no other electronic components between the sixth matching circuit 72 and the second power amplifier 82 along the second direction D2.

[0081] The first transmitting filter 61 is disposed adjacent to the fifth matching circuit 71 along the third direction D3 on the first main surface 101. When the mounting substrate 100 is viewed from the third direction D3, the first transmitting filter 61 overlaps with the fifth matching circuit 71. The second transmitting filter 62 is disposed adjacent to the sixth matching circuit 72 along the third direction D3 on the first main surface 101. When the mounting substrate 100 is viewed from the third direction D3, the second transmitting filter 62 overlaps with the sixth matching circuit 72. Here, "when the mounting substrate 100 is viewed from the third direction D3, electronic component A overlaps with electronic component B" includes: when the mounting substrate 100 is viewed from the third direction D3, at least a portion of electronic component A overlaps with at least a portion of electronic component B.

[0082] A first matching chip 50a and a first receiving filter 63 are disposed adjacent to each other on the first main surface 101 along the second direction D2. The first receiving filter 63 is positioned in the second direction D2 at a position closer to the end of the mounting substrate 100 than the first matching chip 50a. A second matching chip 50b and a second receiving filter 64 are disposed adjacent to each other on the first main surface 101 along the second direction D2. The second receiving filter 64 is positioned in the second direction D2 at a position closer to the end of the mounting substrate 100 than the second matching chip 50b. When the mounting substrate 100 is viewed from the third direction D3, the first matching chip 50a and the second matching chip 50b are disposed between the first receiving filter 63 and the second receiving filter 64 (see reference). Figure 2 When the mounting substrate 100 is viewed from the third direction D3, the first transmitting filter 61 overlaps with the first matching chip 50a. When the mounting substrate 100 is viewed from the third direction D3, the second transmitting filter 62 overlaps with the second matching chip 50b.

[0083] The seventh matching circuit 73 is disposed adjacent to the first receiving filter 63 along the third direction D3 on the first main surface 101. The eighth matching circuit 74 is disposed adjacent to the second receiving filter 64 along the third direction D3 on the first main surface 101. When the mounting substrate 100 is viewed from the third direction D3, the first matching chip 50a and the second matching chip 50b are disposed between the seventh matching circuit 73 and the eighth matching circuit 74.

[0084] As described above, a switch IC 300 including a first switch 20, a second switch 30, a third switch 40, a first low-noise amplifier 83, and a second low-noise amplifier 84 is mounted on the second main surface 102 of the mounting substrate 100.

[0085] When the mounting substrate 100 is viewed from the first direction (thickness direction) D1, the first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2 (see reference). Figure 3 At this time, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, the first switch 20 is disposed between the second switch 30 and the third switch 40. Here, "when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, the first switch 20 is disposed between the second switch 30 and the third switch 40" means that when viewed from the mounting substrate 100, at least one of the multiple line segments connecting any point in the second switch 30 and any point in the third switch 40 passes through the area of ​​the first switch 20.

[0086] When the mounting substrate 100 is viewed from the first direction (thickness direction) D1, the first matching chip 50a, the second matching chip 50b, the first receiving filter 63, the second receiving filter 64, the seventh matching circuit 73, and the eighth matching circuit 74 overlap with the switch IC 300 (see reference). Figure 2 ).

[0087] More specifically, when viewed from the first direction D1 of the mounting substrate 100, the first matching circuit 51 included in the first matching chip 50a overlaps with the second switch 30. When viewed from the first direction D1 of the mounting substrate 100, the second matching circuit 52 included in the second matching chip 50b overlaps with the third switch 40 (see reference). Figure 4 ).

[0088] Furthermore, when viewed from the first direction D1 of the mounting substrate 100, the first receiving filter 63 overlaps with the second switch 30 (see reference). Figure 4 When viewed from the first direction D1 of the mounting substrate 100, the second receiving filter 64 overlaps with the third switch 40 (see reference). Figure 4 ).

[0089] Here, "when the mounting substrate 100 is viewed from the first direction D1, electronic component A and electronic component B overlap" includes: when the mounting substrate 100 is viewed from the first direction D1, at least a portion of electronic component A overlaps with at least a portion of electronic component B.

[0090] Furthermore, in this embodiment, when viewed from the first direction D1 of the mounting substrate 100, a ground path 130 is formed between the second switch 30 and the third switch 40 of the mounting substrate 100. The ground path 130 includes at least one of one or more ground layers and one or more conductive paths included in the mounting substrate 100, and is connected to ground.

[0091] (3) Effect

[0092] As described above, the high-frequency module 1 of this embodiment includes a first power amplifier 81, a second power amplifier 82, a first switch 20, a second switch 30, a third switch 40, and a mounting substrate 100. The first power amplifier 81 amplifies a first transmitted signal in a first frequency band. The second power amplifier 82 amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch 20 is connected to antenna terminals (first antenna terminal 11 and second antenna terminal 12). The second switch 30 switches the connection between the first power amplifier 81 and the first switch 20. The third switch 40 switches the connection between the second power amplifier 82 and the first switch 20. The mounting substrate 100 has a first main surface 101 and a second main surface 102 facing each other, and the first power amplifier 81, the second power amplifier 82, the first switch 20, the second switch 30, and the third switch 40 are disposed on the mounting substrate 100. The first switch 20, the second switch 30, and the third switch 40 are configured to simultaneously connect the first power amplifier 81 and the second power amplifier 82 to the antenna terminal. Viewed from the thickness direction D1 of the mounting substrate 100, the first switch 20 is positioned between the second switch 30 and the third switch 40. The second switch 30 and the third switch 40 are located on the same main surface of the first main surface 101 and the second main surface 102 of the mounting substrate 100.

[0093] According to this structure, the first switch 20 is positioned between the second switch 30 and the third switch 40. This increases the distance between the path from the first switch 20 via the second switch 30 to the first power amplifier 81 and the path from the first switch 20 via the third switch 40 to the second power amplifier 82. As a result, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0094] When two signals with different frequency bands are transmitted simultaneously, the two transmitted signals may cause IMD (Intermodulation Distortion) on the receiving side.

[0095] For example, transmitting two signals simultaneously generates new frequency components not present in the original two transmitted signals. These new frequency components may pass through the receiving filter if they are contained within the frequency band of the signal passing through at least one of the receiving filters, the first receiving filter 63 and the second receiving filter 64. Therefore, by separating the path from the first switch 20 via the second switch 30 to the first power amplifier 81 from the path from the first switch 20 via the third switch 40 to the second power amplifier 82, the likelihood of IMD (Instantaneous Damage) caused by the two transmitted signals on the receiving side can be reduced.

[0096] (4) Variations

[0097] The following describes variations of the implementation method.

[0098] (4.1) Variation Example 1

[0099] Reference Figure 5 The high-frequency module 1A involved in Modification 1 will be described below. Regarding the high-frequency module 1A involved in Modification 1, the same reference numerals are used for structural elements that are the same as those in the high-frequency module 1 involved in the embodiment, and descriptions are omitted as appropriate.

[0100] The high-frequency module 1A in Modified Example 1 differs from the high-frequency module 1 in the embodiment in that the external connection terminals, which are multiple external connection terminals 200, are spherical bumps 250. Furthermore, the high-frequency module 1A in Modified Example 1 differs from the high-frequency module 1 in the embodiment in that it lacks the second resin layer 125 of the high-frequency module 1 in the embodiment. The high-frequency module 1A in Modified Example 1 may also include a bottom filling portion disposed in the gap between the switch IC 300 and the second main surface 102 of the mounting substrate 100.

[0101] The material of the spherical bumps 250 constituting each of the multiple external connection terminals 200 is, for example, gold, copper, solder, etc.

[0102] Regarding the multiple external connection terminals 200, it is also possible that external connection terminals 200 composed of spherical bumps 250 and external connection terminals 200 composed of columnar electrodes coexist.

[0103] In Modification 1, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0104] (4.2) Variation Example 2

[0105] In the above embodiments, the first switch 20, the second switch 30, and the third switch 40 are assumed to be included in the structure of the switch IC 300 after being integrated into a single chip, but are not limited to this structure. The first switch 20, the second switch 30, and the third switch 40 may also not be integrated into a single chip.

[0106] When the first switch 20, the second switch 30, and the third switch 40 are not integrated into a single chip, at least the second switch 30 and the third switch 40 are configured on the same main surface, namely the first main surface 101 or the second main surface 102. For example, in the high-frequency module 1B according to Modification 2, such as Figure 6As shown, the second switch 30 and the third switch 40 are configured on the first main surface 101, and the first switch 20 is configured on the second main surface 102. Alternatively, the second switch 30 and the third switch 40 may be configured on the second main surface 102, and the first switch 20 may be configured on the first main surface 101.

[0107] In Modification 2, when the mounting substrate 100 is viewed from the first direction (thickness direction) D1, the first switch 20, the second switch 30, and the third switch 40 are arranged along the second direction D2. At this time, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, the first switch 20 is arranged between the second switch 30 and the third switch 40.

[0108] (4.3) Variation Example 3

[0109] If the first switch 20, the second switch 30, and the third switch 40 are not integrated into a single chip, the second switch 30 and the third switch 40 can also be configured on different main surfaces.

[0110] For example, in the high-frequency module 1C involved in Modification Example 3, such as Figure 7 As shown, the second switch 30 is disposed on the first main surface 101, and the third switch 40 and the first switch 20 are disposed on the second main surface 102. Alternatively, the first switch 20 may also be disposed on the first main surface 101. In the high-frequency module 1C, when the mounting substrate 100 is viewed from the first direction (thickness direction) D1, the first switch 20, the second switch 30, and the third switch 40 may or may not be disposed along the second direction D2. Similarly, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, the first switch 20 may or may not be disposed between the second switch 30 and the third switch 40.

[0111] In addition, in another example of variation 3, the high-frequency module 1D, such as Figure 8 As shown, the first switch 20 and the second switch 30 are disposed on the second main surface 102, and the third switch 40 is disposed on the first main surface 101. Alternatively, the first switch 20 may also be disposed on the first main surface 101. In the high-frequency module 1D, when the mounting substrate 100 is viewed from the first direction (thickness direction) D1, the first switch 20, the second switch 30, and the third switch 40 may or may not be disposed along the second direction D2. Similarly, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, the first switch 20 may or may not be disposed between the second switch 30 and the third switch 40.

[0112] (4.4) Variation Example 4

[0113] In the high-frequency module 1E involved in Variation Example 4, the difference from the high-frequency module 1 of the embodiment is that, as Figure 9 As shown, the first matching chip 50a is disposed on the second direction D2 at a position closer to the end of the mounting substrate 100 than the first receiving filter 63. Furthermore, in the high-frequency module 1E according to Modification 4, the difference from the high-frequency module 1 of the embodiment is that, as... Figure 9 As shown, the second matching chip 50b is positioned on the second direction D2 at an end closer to the mounting substrate 100 than the second receiving filter 64. Furthermore, in Figure 9 In the text, the first resin layer 120 is omitted.

[0114] As described in the embodiment, the first transmitting filter 61 is electrically connected to the second switch 30 via the first matching chip 50a (the first matching circuit 51). The second transmitting filter 62 is electrically connected to the third switch 40 via the second matching chip 50b (the second matching circuit 52). Additionally, the first receiving filter 63 is electrically connected to the second switch 30 via the first matching chip 50a (the third matching circuit 53).

[0115] That is, by setting the configuration relationship between the first matching chip 50a and the first receiving filter 63 as follows: Figure 9 As shown, the path L3 between the first receiving filter 63 and the second switch 30 is configured between the following paths: the path L1 between the second switch 30 and the first power amplifier 81; and the path L2 between the third switch 40 and the second power amplifier 82.

[0116] Similarly, by setting the configuration relationship between the second matching chip 50b and the second receiving filter 64 as follows: Figure 9 As shown, the path L4 between the second receiving filter 64 and the third switch 40 is configured between the following paths: the path L1 between the second switch 30 and the first power amplifier 81; and the path L2 between the third switch and the second power amplifier.

[0117] Alternatively, one of the configuration relationships between the first matching chip 50a and the first receiving filter 63 and between the second matching chip 50b and the second receiving filter 64 may be as follows: Figure 9 The relationship is as shown. That is, the high-frequency module 1E has a receiving filter that is connected to one of the second switch 30 and the third switch 40 and allows the received signal to pass through. When viewed from the thickness direction D1 of the mounting substrate 100, the path between the receiving filter and the aforementioned switch is configured between the following paths: path L1 between the second switch 30 and the first power amplifier 81; and path L2 between the third switch 40 and the second power amplifier 82.

[0118] According to this structure, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0119] (4.5) Variation Example 5

[0120] In this embodiment, the first receiving filter 63 is configured to overlap with the second switch 30 when viewed from the first direction D1 of the mounting substrate 100, but this configuration is not limited to this structure. Alternatively, the first transmitting filter 61 may overlap with the second switch 30 when viewed from the first direction D1 of the mounting substrate 100. Or, both the first transmitting filter 61 and the first receiving filter 63 may overlap with the second switch 30 when viewed from the first direction D1 of the mounting substrate 100. That is, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, at least one of the first transmitting filter 61 and the first receiving filter 63 overlaps with the second switch 30.

[0121] Similarly, in this embodiment, the second receiving filter 64 is configured to overlap with the third switch 40 when viewed from the first direction D1 of the mounting substrate 100, but this configuration is not limited to this structure. Alternatively, the second transmitting filter 62 may overlap with the third switch 40 when viewed from the first direction D1 of the mounting substrate 100. Or, both the second transmitting filter 62 and the second receiving filter 64 may overlap with the third switch 40 when viewed from the first direction D1 of the mounting substrate 100. That is, when viewed from the first direction (thickness direction) D1 of the mounting substrate 100, at least one of the second transmitting filter 62 and the second receiving filter 64 overlaps with the third switch 40.

[0122] (4.6) Variation Example 6

[0123] Below are some variations.

[0124] In this embodiment, the switch IC 300 is configured to be disposed on the second main surface 102 of the mounting substrate 100, but it is not limited to this configuration. The switch IC 300 may also be disposed on the first main surface 101.

[0125] In this embodiment, the high-frequency module 1 is configured to have multiple antenna terminals (first antenna terminal 11, second antenna terminal 12), but it is not limited to this configuration. Alternatively, the high-frequency module 1 may have only one antenna terminal. That is, the high-frequency module 1 may transmit both mid-frequency band and high-frequency band signals via a single antenna.

[0126] In this embodiment, the first matching circuit 51, the second matching circuit 52, the third matching circuit 53, and the fourth matching circuit 54 are each configured as chip inductors, but are not limited to this configuration. Each of the first matching circuit 51, the second matching circuit 52, the third matching circuit 53, and the fourth matching circuit 54 may be a patterned conductor, a capacitor, or a circuit combining an inductor and a capacitor. Similarly, the fifth matching circuit 71, the sixth matching circuit 72, the seventh matching circuit 73, and the eighth matching circuit 74 may each be a patterned conductor, a capacitor, or a circuit combining an inductor and a capacitor.

[0127] (Summarize)

[0128] As described above, the high-frequency module (1; 1A; 1B; 1E) of the first type includes a first power amplifier (81), a second power amplifier (82), a first switch (20), a second switch (30), a third switch (40), and a mounting base plate (100). The first power amplifier (81) amplifies a first transmitted signal in a first frequency band. The second power amplifier (82) amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch (20) is connected to antenna terminals (first antenna terminal 11, second antenna terminal 12). The second switch (30) switches the connection between the first power amplifier (81) and the first switch (20). The third switch (40) switches the connection between the second power amplifier (82) and the first switch (20). The mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other, and a first power amplifier (81), a second power amplifier (82), a first switch (20), a second switch (30), and a third switch (40) are disposed on the mounting substrate (100). The first switch (20), the second switch (30), and the third switch (40) are configured to simultaneously connect the first power amplifier (81) and the second power amplifier (82) to the antenna terminal. When viewed from the thickness direction (D1) of the mounting substrate (100), the first switch (20) is disposed between the second switch (30) and the third switch (40). The second switch (30) and the third switch (40) are disposed on the same main surface of the first main surface (101) and the second main surface (102) of the mounting substrate (100).

[0129] According to this structure, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0130] The second type of high-frequency module (1C; 1D) includes a first power amplifier (81), a second power amplifier (82), a first switch (20), a second switch (30), a third switch (40), and a mounting base plate (100). The first power amplifier (81) amplifies a first transmitted signal in a first frequency band. The second power amplifier (82) amplifies a second transmitted signal in a second frequency band different from the first frequency band. The first switch (20) is connected to antenna terminals (first antenna terminal 11, second antenna terminal 12). The second switch (30) switches the connection between the first power amplifier (81) and the first switch (20). The third switch (40) switches the connection between the second power amplifier (82) and the first switch (20). The mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other, and a first power amplifier (81), a second power amplifier (82), a first switch (20), a second switch (30), and a third switch (40) are disposed on the mounting substrate (100). The first switch (20), the second switch (30), and the third switch (40) are configured to simultaneously connect the first power amplifier (81) and the second power amplifier (82) to the antenna terminal. The second switch (30) and the third switch (40) are disposed on different main surfaces of the first main surface (101) and the second main surface (102) of the mounting substrate (100).

[0131] According to this structure, the distance between the path from the first switch (20) through the second switch (30) to the first power amplifier (81) and the path from the first switch (20) through the third switch (40) to the second power amplifier (82) can be increased. As a result, the decrease in isolation can be suppressed when transmitting signals in different frequency bands at the same time.

[0132] The high-frequency module (1; 1A; 1B; 1E) of the third type is based on the first type, wherein the first switch (20) is disposed on the same main surface of the mounting substrate (100) on which the second switch (30) and the third switch (40) are disposed.

[0133] According to this structure, the wiring length between the first switch (20) and the second switch (30) and the wiring length between the first switch (20) and the second switch (30) can be shortened respectively.

[0134] The high-frequency module (1; 1A; 1B; 1E) of the fourth type is based on the third type and also has a plurality of external connection terminals (200) disposed on the second main surface (102). The first switch (20), the second switch (30) and the third switch (40) are disposed on the second main surface (102) of the mounting substrate (100).

[0135] This structure enables the miniaturization of the mounting substrate (100).

[0136] The high-frequency module (1; 1A; 1B; 1E) of the fifth method is based on the fourth method, and the first switch (20), the second switch (30) and the third switch (40) are integrated into a single chip.

[0137] This structure enables the miniaturization of the mounting substrate (100).

[0138] The high-frequency module (1; 1A; 1B; 1E) of the sixth type is based on the fourth or fifth type and further includes a first transmit filter (61) and a first matching circuit (51). The first transmit filter (61) allows the first transmit signal output from the first power amplifier (81) to pass through. The first matching circuit (51) is used to achieve impedance matching between the first transmit filter (61) and the second switch (30). The first transmit filter (61) and the first matching circuit (51) are disposed on the first main surface (101) of the mounting substrate (100). When viewed from the thickness direction (D1) of the mounting substrate (100), the first matching circuit (51) overlaps with the second switch (30).

[0139] According to this structure, the path length between the second switch (30) and the first matching circuit (51) can be shortened.

[0140] The high-frequency module (1; 1A; 1B; 1E) of the seventh method is based on the sixth method and includes a first receiving filter (63). The first receiving filter (63) is connected to the second switch (30) to allow the first received signal to pass through. The first receiving filter (63) is disposed on the first main surface (101) of the mounting substrate (100). When viewed from the thickness direction (D1) of the mounting substrate (100), at least one of the first transmitting filter (61) and the first receiving filter (63) overlaps with the second switch (30).

[0141] According to this structure, the path length between the second switch (30) and the filter mentioned above can be shortened.

[0142] The high-frequency module (1; 1A; 1B; 1E) of the eighth type is based on any of the fourth to seventh types and further includes a second transmit filter (62) and a second matching circuit (52). The second transmit filter (62) allows the second transmit signal output from the second power amplifier (82) to pass through. The second matching circuit (52) is used to achieve impedance matching between the second transmit filter (62) and the third switch (40). The second transmit filter (62) and the second matching circuit (52) are disposed on the first main surface (101) of the mounting substrate (100). When viewed from the thickness direction (D1) of the mounting substrate (100), the second matching circuit (52) overlaps with the third switch (40).

[0143] According to this structure, the path length between the third switch (40) and the second matching circuit (52) can be shortened.

[0144] The high-frequency module (1; 1A; 1B; 1E) of the ninth type is based on the eighth type and includes a second receiving filter (64). The second receiving filter (64) is connected to the third switch (40) to allow the second received signal to pass through. The second receiving filter (64) is disposed on the first main surface (101) of the mounting substrate (100). When viewed from the thickness direction (D1) of the mounting substrate (100), at least one of the second transmitting filter (62) and the second receiving filter (64) overlaps with the third switch (40).

[0145] According to this structure, the path length between the third switch (40) and the filter mentioned above can be shortened.

[0146] The high-frequency module of the 10th method (1; 1A; 1B; 1C; 1D; 1E) is based on any of the 1st to 9th methods, and when viewed from the thickness direction (D1) of the mounting substrate (100), a path (e.g., ground path 130) is formed between the second switch (30) and the third switch (40) of the mounting substrate (100) for ground connection.

[0147] According to this structure, when viewed from the thickness direction (D1) of the mounting substrate (100), a path connected to ground is provided between the second switch (30) and the third switch (40), thereby suppressing the decrease in isolation when transmitting signals in different frequency bands at the same time.

[0148] The high-frequency module of the 11th type (1; 1A; 1B; 1C; 1D; 1E) is based on any of the 1st to 10th types and further includes a receiving filter (first receiving filter 63, second receiving filter 64). The receiving filter is connected to one of the second switch (30) and the third switch (40) to allow the received signal to pass through. When viewed from the thickness direction (D1) of the mounting substrate (100), the path (path L3, path L4) between the receiving filter and the switch is arranged between the following paths: the path (L1) between the second switch (30) and the first power amplifier (81); and the path (L2) between the third switch (40) and the second power amplifier (82).

[0149] According to this structure, a path for receiving signals (paths L3, L4) is configured between the path (L1) between the second switch (30) and the first power amplifier (81) and the path (L2) between the third switch (40) and the second power amplifier (82). Therefore, the path (L1) between the second switch (30) and the first power amplifier (81) can be separated from the path (L2) between the third switch (40) and the second power amplifier (82). As a result, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0150] The communication device (500) of the 12th mode includes a high-frequency module (1; 1A; 1B; 1C; 1D; 1E) of any of the 1st to 11th modes, and a signal processing circuit (501). The signal processing circuit (501) processes the first transmission signal and the second transmission signal to be transmitted through the high-frequency module (1; 1A; 1B; 1C; 1D; 1E).

[0151] According to this structure, the decrease in isolation can be suppressed when transmitting signals in different frequency bands simultaneously.

[0152] Explanation of reference numerals in the attached figures

[0153] 1. 1A, 1B, 1C, 1D, 1E: High-frequency module; 11: Antenna terminal 1; 12: Antenna terminal 2; 20: Switch 1; 21: Terminal 1; 22: Terminal 2; 23: Terminal 3; 24: Terminal 4; 30: Switch 2; 31: Common terminal; 32, 33, 34: Selection terminals; 40: Switch 3; 41: Common terminal; 42, 43, 44: Selection terminals; 50a: Matching chip 1; 50b: Matching chip 2; 51: Matching circuit 1; 52: Matching circuit 2; 53: Matching circuit 3; 54: Matching circuit 4; 61: Transmit filter 1; 62: Transmit filter 2; 63: Receive filter 1; 64: Receive filter 2; 71: Matching circuit 5; 72: Matching circuit 6; 73: Matching circuit 7 ; 74: 8th matching circuit; 81: 1st power amplifier; 82: 2nd power amplifier; 83: 1st low noise amplifier; 84: 2nd low noise amplifier; 91: 1st input terminal; 92: 2nd input terminal; 93: 1st output terminal; 94: 2nd output terminal; 100: Mounting substrate; 101: 1st main surface; 102: 2nd main surface; 120: 1st resin layer; 125: 2nd resin layer; 130: Ground path; 200: External connection terminal; 250: Spherical bump; 300: Switch IC; 500: Communication device; 501: Signal processing circuit; 502: RF signal processing circuit; 503: Baseband signal processing circuit; 511: 1st antenna; 512: 2nd antenna; D1: 1st direction (thickness direction); D2: 2nd direction; D3: 3rd direction; L1, L2, L3, L4: Paths.

Claims

1. A high-frequency module, comprising: The first power amplifier amplifies the first transmitted signal in the first frequency band; The second power amplifier amplifies the second transmitted signal in a second frequency band that is different from the first frequency band; The first switch is connected to the antenna terminal; The second switch switches the connection between the first power amplifier and the first switch. A third switch, which switches the connection between the second power amplifier and the first switch; and A mounting substrate has a first main surface and a second main surface facing each other, and a first power amplifier, a second power amplifier, a first switch, a second switch, and a third switch are disposed on the mounting substrate. in, The first switch, the second switch, and the third switch are configured to simultaneously connect the first power amplifier and the second power amplifier to the antenna terminal. Viewed from the thickness direction of the mounting substrate, the first switch is positioned between the second switch and the third switch. The second switch and the third switch are disposed on the same main surface of the first main surface and the second main surface of the mounting substrate.

2. The high-frequency module according to claim 1, wherein, The first switch is disposed on the same main surface of the mounting substrate on which the second switch and the third switch are disposed.

3. The high-frequency module according to claim 2, wherein, It also has multiple external connection terminals configured on the second main surface. The first switch, the second switch, and the third switch are disposed on the second main surface of the mounting substrate.

4. The high-frequency module according to claim 3, wherein, The first switch, the second switch, and the third switch are integrated into a single chip.

5. The high-frequency module according to claim 3 or 4 further comprises: A first transmitting filter that allows the first transmitting signal output from the first power amplifier to pass through; and The first matching circuit is used to achieve impedance matching between the first transmitting filter and the second switch. The first transmitting filter and the first matching circuit are disposed on the first main surface of the mounting substrate. When viewed from the thickness direction of the mounting substrate, the first matching circuit overlaps with the second switch.

6. The high-frequency module according to claim 5, wherein, It also includes a first receiving filter, which is connected to the second switch, and the first receiving filter allows the first received signal to pass through. The first receiving filter is disposed on the first main surface of the mounting substrate. When viewed from the thickness direction of the mounting substrate, at least one of the first transmitting filter and the first receiving filter overlaps with the second switch.

7. The high-frequency module according to claim 3 or 4 further comprises: A second transmit filter that allows the second transmit signal output from the second power amplifier to pass through; and The second matching circuit is used to achieve impedance matching between the second transmitting filter and the third switch. The second transmitting filter and the second matching circuit are disposed on the first main surface of the mounting substrate. When viewed from the thickness direction of the mounting substrate, the second matching circuit overlaps with the third switch.

8. The high-frequency module according to claim 7, wherein, It also includes a second receiving filter, which is connected to the third switch, and allows the second received signal to pass through. The second receiving filter is disposed on the first main surface of the mounting substrate. When viewed from the thickness direction of the mounting substrate, at least one of the second transmitting filter and the second receiving filter overlaps with the third switch.

9. The high-frequency module according to any one of claims 1 to 4, wherein, When viewed from the thickness direction of the mounting substrate, a path for ground connection is formed between the second switch and the third switch on the mounting substrate.

10. The high-frequency module according to any one of claims 1 to 4, wherein, It also includes a receiving filter, which is connected to one of the second and third switches, and the receiving filter allows the received signal to pass through. When viewed from the thickness direction of the mounting substrate, the path between the receiving filter and one of the switches is configured between the following paths: the path between the second switch and the first power amplifier; and the path between the third switch and the second power amplifier.

11. A communication device comprising: The high-frequency module according to any one of claims 1 to 10; and A signal processing circuit that processes the first and second transmitted signals to be transmitted through the high-frequency module.

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