Silicon carbide crystal wire sawing apparatus and method

Abstract

The application provides a silicon carbide crystal wire cutting device and a cutting method, which comprise a cutting platform, a wire cutting device, a bearing deflection device and the like, wherein the wire cutting device comprises a wire driving wheel, a wire deflection assembly, deflection driving device one, deflection driving device two and the like, the bearing deflection device can control the intermittent rotation of the silicon carbide crystal, after rotating to a predetermined position, the cutting posture of the cutting wire is controlled by deflection driving device one and deflection driving device two to complete the continuous cutting of the silicon carbide crystal, for the cutting of large-size silicon carbide crystals, the silicon carbide crystal can be gradually cut from the outside to the inside, so that the cutting wire and the cutting position of the silicon carbide crystal are point contact, the contact overlapping area is reduced, and the cutting span is reduced. The application can solve the problem of too long single cutting length of the cutting wire in the cutting process of large-size silicon carbide crystals, improve the cutting efficiency, and ensure the cutting quality.

Description

Technical Field

[0001] This invention relates to the field of cutting and processing technology, and in particular to a silicon carbide crystal wire cutting device and cutting method. Background Technology

[0002] Silicon carbide crystals are widely used in semiconductors, electronic components and other fields. Due to their high hardness, large silicon carbide crystals need to be cut for components that require a relatively thin size.

[0003] Cutting silicon carbide using a kerf is a common cutting method. Due to the high hardness of silicon carbide, oscillating cutting can improve cutting efficiency and ensure cutting quality. During oscillating cutting, the silicon carbide is stationary, and the kerf oscillates left and right within the kerf. However, for larger silicon carbide crystals, the actual cutting length of the kerf is greater when cutting to the center, resulting in greater resistance during the cutting process. In addition, the longer cutting time due to the larger size not only increases the wear on the kerf but also reduces the quality of the cut surface of the silicon carbide crystal, making the smoothness unsuitable for subsequent processing. Summary of the Invention

[0004] To address the aforementioned problems, this invention provides a silicon carbide crystal wire cutting device and method, which can solve the problem of excessively long single-cut length of the cutting wire during the cutting process of large-size silicon carbide crystals, thereby improving cutting efficiency while ensuring cutting quality.

[0005] To solve the above problems, the technical solution adopted by the present invention is as follows:

[0006] A silicon carbide crystal wire cutting device, comprising:

[0007] The cutting platform has a first mounting bracket and a second mounting bracket on its surface;

[0008] A bearing deflection device is disposed on one side of the first mounting frame and includes two bearing rollers for placing silicon carbide crystals, which are used to control the silicon carbide crystals to rotate intermittently in the first direction;

[0009] A wire cutting device, disposed on one side of a second mounting bracket, includes two wire drive wheels and two sets of wire deflection assemblies. Each wire deflection assembly includes a deflection mounting bracket and a wire deflection wheel mounted at the end of the deflection mounting bracket. A cutting wire is sleeved between the two wire drive wheels. The cutting wire passes around the top end of the first set of wire deflection assemblies and the bottom end of the second set of wire deflection assemblies. A first deflection drive device is disposed on the side wall of the first set of wire deflection assemblies, and a second deflection drive device is disposed on the side wall of the second set of wire deflection assemblies.

[0010] The silicon carbide crystal is intermittently rotated by a bearing deflection device, and the cutting posture of the cutting line is controlled by deflection drive device one and deflection drive device two to complete the continuous cutting of the silicon carbide crystal.

[0011] Preferably, the wire cutting device further includes a tensioning assembly, which includes a telescopic element and a tensioning wheel installed at the end of the telescopic element, the tensioning wheel being located at the center of the line connecting the two wire drive wheels.

[0012] Preferably, it further includes a limiting device, which includes a rigid first limiting component and an elastic second limiting component. The first limiting component and the second limiting component are parallel to the bearing deflection device and are located on both sides of the silicon carbide crystal, respectively.

[0013] Preferably, the second limiting component includes a first mounting base and a second mounting base. A pressure plate is rotatably disposed on a first side surface of the first mounting base, and a guide rod is fixedly disposed on a second side surface. The guide rod passes through the second mounting base, and an elastic element is disposed between the two.

[0014] Preferably, both the first deflection drive device and the second deflection drive device are hydraulic deflection devices, which are connected through a pumping pipeline and have opposite deflection directions.

[0015] Preferably, the deflection drive device includes a first deflection cylinder and a first deflection shaft. The first deflection shaft is fixedly connected to a corresponding line deflection component. A first deflection plate is fixedly connected to the inner wall of the first deflection cylinder. A second deflection plate is fixedly connected to the side wall of the first deflection shaft. A first control chamber is provided between the first deflection plate and the second deflection plate on the first side, and a second control chamber is provided between the second sides.

[0016] The second deflection drive device includes a second deflection cylinder and a second deflection shaft. The second deflection shaft is fixedly connected to a corresponding line deflection component. A third deflection plate is fixedly connected to the inner wall of the second deflection cylinder. A fourth deflection plate is fixedly connected to the side wall of the second deflection shaft. A third control chamber is provided between the first side of the third deflection plate and the fourth deflection plate, and a first elastic reset component is provided between the second side. The third control chamber and the second control chamber are in a communicating state.

[0017] Preferably, the deflection drive device includes a third deflection cylinder, a first deflection control plate is slidably disposed inside the third deflection cylinder, a third deflection shaft is rotatably disposed on the inner wall of the third deflection cylinder, the third deflection shaft passes through the first deflection control plate, a first deflection control ring is fixedly connected to the surface of the first deflection control plate and sleeved on the outside of the third deflection shaft, a first deflection control protrusion is provided on the inner wall of the first deflection control ring, a matching arc-shaped first deflection groove is opened on the surface of the third deflection shaft, a fourth control bladder is provided on the first side of the first deflection control plate and a fifth control bladder is provided on the second side;

[0018] The second deflection drive device includes a fourth deflection cylinder, inside which a second deflection control plate is slidably disposed. A fourth deflection shaft is rotatably disposed on the inner wall of the fourth deflection cylinder, and the fourth deflection shaft passes through the second deflection control plate. A second deflection control ring is fixedly connected to the surface of the second deflection control plate and sleeved on the outside of the fourth deflection shaft. A second deflection control protrusion is provided on the inner wall of the second deflection control ring. A matching arc-shaped first deflection groove is opened on the surface of the fourth deflection shaft. A sixth control bladder is provided on the first side of the second deflection control plate, and a second elastic reset component is provided on the second side. The fifth control bladder and the sixth control bladder are in a communicating state.

[0019] Preferably, the hydraulic deflection device further includes a position control sensor for detecting the deflection angle of the hydraulic deflection device, and the position control sensor is electrically connected to the bearing deflection device.

[0020] Preferably, the bearing deflection device further includes a first drive assembly disposed between the two bearing rollers, and a second drive assembly for driving the first bearing roller to rotate.

[0021] A method for wire cutting silicon carbide crystals includes the following steps:

[0022] S1. Place the silicon carbide crystal at the predetermined position on the upper end of the bearing deflection device to complete the preparation for feeding the silicon carbide crystal.

[0023] S2. Adjust the positions of deflection drive device one and deflection drive device two to put the cutting line in the first cutting posture, and at the same time control the directional movement of the cutting line to complete the wire cutting of the silicon carbide crystal surface.

[0024] S3. During the cutting process, the cutting line is controlled to deflect towards the second cutting posture to complete the continuous cutting of the silicon carbide surface.

[0025] S4. After one cut is completed, control the cutting line to return to the first cutting posture, and then control the silicon carbide crystal to rotate in the first direction by a predetermined angle through the bearing deflection device.

[0026] S5. Repeat steps S2-S4 above to complete the continuous cutting of the silicon carbide crystal surface.

[0027] The beneficial effects of this invention are as follows:

[0028] By incorporating a deflection device and a wire cutting device, the cutting posture of the cutting wire can be adjusted through deflection drive device one and deflection drive device two within the wire cutting device. This enables continuous cutting of the silicon carbide crystal surface, reducing the depth and length of a single cut, lowering the resistance of a single cut, ensuring the smoothness of the silicon carbide crystal cut surface, and guaranteeing quality. Simultaneously, the cutting wire maintains point contact at its tip during deflection, improving cutting efficiency. Its linear change and stable cutting force state ensure cutting quality while reducing wear on the cutting wire. This equipment allows for continuous circumferential cutting of the silicon carbide crystal surface, enabling batch-by-batch continuous cutting control. It is particularly suitable for continuous cutting of large-sized silicon carbide crystals, improving cutting efficiency and ensuring the quality of the cut end face. Attached Figure Description

[0029] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0030] Figure 2 This is a schematic diagram of the main structure of the present invention;

[0031] Figure 3 This is a top view of the structure of the present invention;

[0032] Figure 4 This is a side view of the structure of the present invention;

[0033] Figure 5 This is a three-dimensional structural diagram of the silicon carbide crystal in the cutting state according to the present invention;

[0034] Figure 6 This is a schematic diagram of the first cutting posture structure of this cutting line;

[0035] Figure 7 This is a schematic diagram of the second cutting posture structure of this cutting line;

[0036] Figure 8 This is a schematic diagram of the structure of Embodiment 1 of the deflection driving method of the present invention;

[0037] Figure 9 This is a schematic diagram of the structure of Embodiment 2 of the deflection driving method of the present invention.

[0038] In the diagram: 100, Cutting platform; 110, First mounting bracket; 120, Second mounting bracket; 200, Silicon carbide crystal; 300, Bearing deflection device; 310, Bearing roller; 320, First drive assembly; 330, Second drive assembly; 400, Limiting device; 410, First limiting assembly; 420, Second limiting assembly; 421, Pressing plate; 422, First mounting base; 423, Guide rod; 424, Second mounting base; 500, Wire cutting device; 510, Wire drive wheel; 520, Wire deflection assembly; 521, Deflection mounting bracket; 522, Wire deflection wheel; 530, Deflection drive device one; 5311, First deflection cylinder; 5312, First deflection shaft; 5313, First control chamber; 5314, Second deflection plate; 5315, Second control chamber; 5316, First... 5321, deflection plate; 5322, third deflection cylinder; 5323, first deflection control plate; 5324, fourth control chamber; 5325, first deflection control ring; 5326, third deflection shaft; 540, second deflection drive device; 5411, second deflection cylinder; 5412, second deflection shaft; 5413, third control chamber; 5414, third deflection plate; 5415, first elastic reset assembly; 5416, fourth deflection plate; 5421, fourth deflection cylinder; 5422, second deflection control plate; 5423, sixth control chamber; 5424, second deflection control ring; 5425, fourth deflection shaft; 5426, second elastic reset assembly; 550, pumping pipe; 560, tensioning assembly; 561, telescopic element; 562, tensioning wheel; 570, cutting line. Implementation

[0039] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0040] See attached document Figure 1 -Appendix Figure 9A silicon carbide crystal wire cutting device includes a cutting platform 100, a wire cutting device 500, and a bearing deflection device 300. The wire cutting device 500 includes a wire drive wheel 510, a wire deflection assembly 520, a first deflection drive device 530, and a second deflection drive device 540. The bearing deflection device 300 controls the intermittent rotation of the silicon carbide crystal 200. After rotating to a predetermined position, the first deflection drive device 530 and the second deflection drive device 540 collaboratively control the cutting posture of the cutting wire 570 to complete the cutting of the silicon carbide crystal. The continuous cutting of body 200, for cutting large-sized silicon carbide crystals 200, can gradually cut the silicon carbide crystal 200 from the outside to the inside, so as to ensure that the cutting line 570 and the cutting position of the silicon carbide crystal 200 are in point contact, reducing the contact overlap area and the cutting span, reducing cutting resistance and improving cutting efficiency. It is suitable for continuous cutting of large-sized silicon carbide crystals 200. The force is stable during the cutting process, ensuring the smoothness of the surface of the silicon carbide crystal 200 after cutting, while shortening the cutting time.

[0041] The surface of the cutting platform 100 is provided with a first mounting bracket 110 and a second mounting bracket 120. The bearing deflection device 300 is provided on one side of the first mounting bracket 110 and includes two bearing rollers 310 for placing silicon carbide crystals 200. It is used to control the silicon carbide crystals 200 to rotate intermittently in the first direction. It can adjust the rotation of the silicon carbide crystals 200 after one cut, so that they can rotate to the next position and adjust the cutting posture.

[0042] The wire cutting device 500 is disposed on one side of the second mounting bracket 120 and includes two wire drive wheels 510 and two sets of wire deflection assemblies 520. Each wire deflection assembly 520 includes a deflection mounting bracket 521 and a wire deflection wheel 522 mounted at the end of the deflection mounting bracket 521. A cutting wire 570 is sleeved between the two wire drive wheels 510, and the cutting wire 570 passes around the top end of the first set of wire deflection assemblies 520 and the bottom end of the second set of wire deflection assemblies 520. A first deflection drive device 530 is disposed on the side wall of the first set of wire deflection assemblies 520, and a second deflection drive device 540 is disposed on the side wall of the second set of wire deflection assemblies 520. The first and second deflection drive devices 530 and 540 can coordinately adjust the positions of the two sets of wire deflection assemblies 520, controlling the wire deflection during the cutting process. The first set of wire drive wheels 510 deflects upwards, and the second set of wire deflection components 520 deflects downwards, enabling adjustment of the cutting posture of the cutting wire 570. This allows the cutting wire 570 to gradually transition from a first cutting posture to a second cutting posture. With the silicon carbide crystal 200 in a fixed position, continuous cutting of the surface of the silicon carbide crystal 200 is possible. Furthermore, the cutting position of the cutting wire 570 has minimal contact with the silicon carbide crystal 200, with the very end being a point contact, which greatly improves cutting efficiency. At the same time, the cutting wire 570 deflects regularly, resulting in a stable cutting state and low wear, making it suitable for continuous cutting of large-sized silicon carbide crystals 200. This ensures stable surface quality of the silicon carbide crystal 200 after cutting while improving the cutting efficiency.

[0043] Please refer to the appendix for details. Figure 6 and appendix Figure 7 , attached Figure 6 The first cutting posture of cutting line 570, attached. Figure 7 This is the second cutting posture for cutting line 570.

[0044] After a single cut, the silicon carbide crystal 200 is intermittently rotated by the bearing deflection device 300. The cutting posture of the cutting wire 570 is controlled collaboratively by the deflection drive device 1 530 and the deflection drive device 2 540 to achieve continuous cutting of the silicon carbide crystal 200, that is, gradually changing from the first cutting posture to the second cutting posture, thus completing continuous cutting of the surface of the silicon carbide crystal 200. This cutting method enables continuous cutting of the surface of the silicon carbide crystal 200, and is particularly suitable for continuous cutting of large-sized silicon carbide crystals 200. The cutting wire experiences stable force during the cutting process, and the cutting length within the silicon carbide crystal 200 is short, reducing the cutting resistance and wear of the cutting wire 570 while ensuring the smoothness of the surface of the silicon carbide crystal 200 after cutting, and shortening the cutting time.

[0045] The wire cutting device 500 also includes a tensioning assembly 560, which includes a telescopic element 561 and a tensioning wheel 562 installed at the end of the telescopic element 561. The tensioning wheel 562 is located at the center of the line connecting the two wire drive wheels 510. The telescopic element 561 can be an electrically controlled telescopic rod, which can control the tensioning wheel 562 to move up and down so that the cutting wire 570 can remain taut during the posture adjustment process, thus ensuring the stability of the cutting wire 570 during the cutting process.

[0046] The cutting device also includes a limiting device 400, which includes a rigid first limiting component 410 and an elastic second limiting component 420. The first limiting component 410 and the second limiting component 420 are parallel to the bearing deflection device 300 and are located on both sides of the silicon carbide crystal 200. The first limiting component 410 and the second limiting component 420 can clamp and position the silicon carbide crystal 200 from both sides to ensure its accurate and stable position during the cutting process and to ensure the normal progress of the cutting.

[0047] Please refer to the appendix for details. Figure 3 The second limiting component 420 includes a first mounting base 422 and a second mounting base 424. A pressing plate 421 is rotatably provided on the first side surface of the first mounting base 422, and a guide rod 423 is fixedly provided on the second side surface. The guide rod 423 passes through the second mounting base 424 and an elastic element, which can be a spring, is provided between the two. A locking device is provided on the outside to adjust the position of the second mounting base 424 and lock it. After the silicon carbide crystal 200 is placed to the predetermined position, the silicon carbide crystal 200 is pressed against from the outside by the second limiting component 420 to ensure the stability of the pressing process.

[0048] Both deflection drive device 1 (530) and deflection drive device 2 (540) are hydraulic deflection devices, connected by a pumping pipe 550. Their deflection directions are opposite. The hydraulic deflection devices are connected to an external hydraulic pumping system, enabling coordinated control of the deflection directions of both devices. This allows them to synchronously control the two sets of line deflection components 520 to rotate in opposite directions by a predetermined angle, thus controlling the deflection angle of the cutting line 570 and ensuring stable cutting posture control. Hydraulic control provides high precision and stable control effect. Furthermore, the connection between the two devices via the pumping pipe 550 allows for synchronous deflection, reducing the difficulty of controlling the deflection angle of the cutting line 570 and increasing the automation level of the deflection control.

[0049] Please refer to the appendix for details. Figure 8As an embodiment of the deflection drive method, the deflection drive device 530 includes a first deflection cylinder 5311 and a first deflection shaft 5312. The first deflection shaft 5312 rotates within the inner axis of the first deflection cylinder 5311. The first deflection shaft 5312 is fixedly connected to the corresponding line deflection assembly 520. A first deflection plate 5316 is fixedly connected to the inner wall of the first deflection cylinder 5311. A second deflection plate 5314 is fixedly connected to the side wall of the first deflection shaft 5312. A first control capsule 5313 is provided between the first deflection plate 5316 and the second deflection plate 5314 on the first side, and a second control capsule 5315 is provided between the second sides.

[0050] The second deflection drive device 540 includes a second deflection cylinder 5411 and a second deflection shaft 5412. The second deflection shaft 5412 is fixedly connected to the corresponding line deflection assembly 520. A third deflection plate 5414 is fixedly connected to the inner wall of the second deflection cylinder 5411. A fourth deflection plate 5416 is fixedly connected to the side wall of the second deflection shaft 5412. A third control capsule 5413 is disposed between the first side of the third deflection plate 5414 and the fourth deflection plate 5416, and a first elastic reset assembly 5415 is disposed between the second side. The third control capsule 5413 and the second control capsule 5415 are in a communicating state. Furthermore, the first control bladder 5313 is externally connected to a hydraulic control device. The hydraulic control device pumps control oil into the first control bladder 5313, which can drive the second deflection plate 5314 to drive the first deflection shaft 5312 to deflect, thereby controlling the deflection angle of the first set of linear deflection components 520. At the same time, the oil inside the second control bladder 5315 after compression is pumped into the third control bladder 5413, which can also drive the third deflection plate 5414 and the second deflection shaft 5412 to deflect, thereby controlling the deflection angle of the second set of linear deflection components 520 and thus controlling the deflection attitude.

[0051] Simultaneously, the first deflection shaft 5312 and the second deflection shaft 5412 deflect at opposite angles, enabling opposite control processes. This allows the two sets of line deflection components 520 to deflect at opposite predetermined angles, gradually transforming the cutting line 570 from the first cutting posture to the second cutting posture, achieving a continuous cutting process. During the return stroke, under the action of the first elastic reset component 5415, the squeezed oil flows in opposite directions, controlling the cutting line 570 to gradually transform from the second cutting posture to the first cutting posture, thus achieving cut reset. The deflection control achieved through the above deflection drive method has a fast deflection response, good control effect, and high cutting efficiency, meeting the requirements for rapid cutting of silicon carbide crystal 200. It should be noted that a limiting device can be set around the control capsule to control its expansion direction. For cutting scenarios with a small deflection angle range, an arc-shaped elastic telescopic rod can also be selected for deflection control.

[0052] Please refer to the appendix for details. Figure 9 Example 2 of the deflection drive method; wherein the deflection drive device 530 includes a third deflection cylinder 5321, a first deflection control plate 5322 is slidably disposed inside the third deflection cylinder 5321, a third deflection shaft 5325 is rotatably disposed on the inner wall of the third deflection cylinder 5321, the third deflection shaft 5325 passes through the first deflection control plate 5322, a first deflection control ring 5324 is fixedly connected to the surface of the first deflection control plate 5322 and sleeved on the outside of the third deflection shaft 5325, and the inner wall of the first deflection control ring 5324 is provided with a first deflection control... The first deflection control plate 5322 has a protrusion and a matching arc-shaped first deflection groove on its surface. The first deflection control plate 5322 has a fourth control bladder 5323 on its first side and a fifth control bladder 5326 on its second side. The fourth control bladder 5323 is connected to a hydraulic pump and can be controlled to expand and push the first deflection control plate 5322 to move outward. During this process, under the limit of the first deflection control ring 5324, the third deflection shaft 5325 can be controlled to rotate in a specific direction, thereby controlling the first set of linear deflection components 520 to deflect and rotate, thus achieving deflection control.

[0053] The second deflection drive device 540 includes a fourth deflection cylinder 5421. A second deflection control plate 5422 is slidably disposed inside the fourth deflection cylinder 5421. A fourth deflection shaft 5425 is rotatably disposed on the inner wall of the fourth deflection cylinder 5421, and the fourth deflection shaft 5425 passes through the second deflection control plate 5422. A second deflection control ring 5424 is fixedly connected to the surface of the second deflection control plate 5422 and sleeved on the outside of the fourth deflection shaft 5425. A second deflection control protrusion is provided on the inner wall of the second deflection control ring 5424. A matching arc-shaped first deflection groove is opened on the surface of the fourth deflection shaft 5425. A sixth control capsule 5423 is provided on the first side of the second deflection control plate 5422, and a second elastic reset component 5426 is provided on the second side. The fifth control capsule 5326 and the sixth control capsule 5423 are in a communicating state. During the movement of plate 5322, the oil in the fifth control bladder 5326 on the other side can be pumped into the sixth control bladder 5423, which can control its expansion and push the second deflection control plate 5422 to move, thereby controlling the rotation of the fourth deflection shaft 5425 and realizing the deflection control of the second side line deflection assembly 520. At the same time, during the return stroke, the second elastic reset assembly 5426 can push the second deflection control plate 5422 to reset, squeezing the oil in the corresponding control bladder back to achieve the reset of the cutting posture of the cutting line 570. Through the above settings, the position of the deflection shaft can be locked during the cutting process by cooperating with the deflection control protrusion and the deflection groove, controlling the accuracy of the cutting process, ensuring the stability of the cutting line 570 during the cutting process, and ensuring the quality of the cutting end face of the silicon carbide crystal 200.

[0054] Meanwhile, the hydraulic deflection device also includes a position control sensor for detecting the deflection angle of the hydraulic deflection device. The position control sensor is electrically connected to the bearing deflection device 300. The position control sensor can select a laser sensing element and read the cutting posture of the cutting line 570 by sensing the deflection angle of the line deflection component 520. At the same time, it can control its rapid reset. After reset, it controls the bearing deflection device 300 to drive the silicon carbide crystal 200 to rotate, realizing continuous cutting of the next position on the surface of the silicon carbide crystal 200, improving the automation level of silicon carbide crystal 200 cutting, and further improving the efficiency of silicon carbide crystal 200 cutting.

[0055] The bearing deflection device 300 also includes a first drive assembly 320 disposed between two bearing rollers 310, and a second drive assembly 330 for driving the first bearing roller 310 to rotate. The bearing rollers 310 and the first drive assembly 320 can be selected as belt drives, which can coordinate the control of the bearing rollers 310 on both sides, so that the deflection of the silicon carbide crystal 200 can be controlled more stably and the deflection position can be accurate, thus ensuring the accuracy of the structure.

[0056] A method for wire cutting silicon carbide crystals, using the aforementioned cutting apparatus, includes the following steps:

[0057] S1. Place the silicon carbide crystal 200 at a predetermined position on the upper end of the bearing deflection device 300 to complete the feeding preparation of the silicon carbide crystal 200. Position the silicon carbide crystal 200 by the first limiting component 410 and the second limiting component 420 on both sides to ensure its position accuracy and stability during the cutting process.

[0058] S2. Adjust the positions of deflection drive device 1 530 and deflection drive device 2 540 to put the cutting line 570 in the first cutting posture, and control the directional movement of the cutting line 570 to complete the wire cutting of the surface of the silicon carbide crystal 200. For large-sized silicon carbide crystals 200, the depth of single cutting is limited. By cutting the silicon carbide crystal 200 circumferentially, the cutting length at the center position is reduced, the effective cutting length of the cutting line 570 during a single cutting process is reduced, the cutting resistance is reduced, the smoothness of the cutting section is ensured, and the cutting efficiency is guaranteed.

[0059] S3. During the cutting process, the cutting line 570 is controlled to deflect towards the second cutting posture to complete the continuous cutting of the silicon carbide 200 surface. During the posture adjustment of the cutting line 570, its front end is always in point contact in the initial stage, which reduces the cutting length in the front cutting process. In addition, the cutting change is stable during the continuous change, and there will be no sudden change in the cutting load, which reduces the wear on the surface of the cutting line 570, ensures the stability of the cutting, and reduces the cutting cost.

[0060] S4. After one cut is completed, the cutting line 570 is controlled to return to the first cutting posture. Then, the silicon carbide crystal 200 is controlled to rotate in the first direction by a predetermined angle through the bearing deflection device 300. At this time, the cutting line 570 is controlled to return to the initial cutting position, and the silicon carbide crystal 200 is controlled to rotate in the first direction. (Refer to the attached diagram.) Figure 7 The clockwise rotation allows for subsequent recutting of the silicon carbide crystal 200 surface.

[0061] S5. Repeat steps S2-S4 above to complete the continuous cutting of the surface of silicon carbide crystal 200. After the silicon carbide crystal 200 rotates once, the diameter of the internal cutting area of ​​the silicon carbide crystal 200 can be reduced, and the resistance of subsequent cutting can be reduced. At the same time, the above operation can be repeated until the silicon carbide crystal 200 is completely cut off.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A silicon carbide crystal wire cutting device, characterized in that, include: The cutting platform (100) has a first mounting bracket (110) and a second mounting bracket (120) on its surface. The bearing deflection device (300) is disposed on one side of the first mounting frame (110) and includes two bearing rollers (310) for placing the silicon carbide crystal (200), which are used to control the silicon carbide crystal (200) to rotate intermittently in a first direction; A wire cutting device (500) is disposed on one side of a second mounting bracket (120) and includes two wire drive wheels (510) and two sets of wire deflection assemblies (520). The wire deflection assembly (520) includes a deflection mounting bracket (521) and a wire deflection wheel (522) mounted at the end of the deflection mounting bracket (521). A cutting wire (570) is sleeved between the two wire drive wheels (510). The cutting wire (570) passes around the top end of the first set of wire deflection assemblies (520) and the bottom end of the second set of wire deflection assemblies (520). A deflection drive device (530) is disposed on the side wall of the first set of wire deflection assemblies (520), and a deflection drive device (540) is disposed on the side wall of the second set of wire deflection assemblies (520). The silicon carbide crystal (200) is intermittently rotated by the bearing deflection device (300), and the cutting posture of the cutting line (570) is controlled by the deflection drive device one (530) and the deflection drive device two (540) to complete the continuous cutting of the silicon carbide crystal (200). Both the first deflection drive device (530) and the second deflection drive device (540) are hydraulic deflection devices. They are connected through a pumping pipe (550) and have opposite deflection directions. The two sets of linear deflection components are synchronously controlled to rotate in opposite directions by a predetermined angle. The specific configurations of the deflection drive device one and the deflection drive device two are as follows: The deflection drive device (530) includes a first deflection cylinder (5311) and a first deflection shaft (5312). The first deflection shaft (5312) is fixedly connected to a corresponding line deflection assembly (520). A first deflection plate (5316) is fixedly connected to the inner wall of the first deflection cylinder (5311). A second deflection plate (5314) is fixedly connected to the side wall of the first deflection shaft (5312). A first control bladder (5313) is provided between the first side of the first deflection plate (5316) and the second deflection plate (5314), and a second control bladder (5315) is provided between the second side. The second deflection drive device (540) includes a second deflection cylinder (5411) and a second deflection shaft (5412). The second deflection shaft (5412) is fixedly connected to the corresponding line deflection assembly (520). A third deflection plate (5414) is fixedly connected to the inner wall of the second deflection cylinder (5411). A fourth deflection plate (5416) is fixedly connected to the side wall of the second deflection shaft (5412). A third control bladder (5413) is provided between the first side of the third deflection plate (5414) and the fourth deflection plate (5416), and a first elastic reset assembly (5415) is provided between the second side. The third control bladder (5413) and the second control bladder (5315) are in a communicating state. or; The deflection drive device (530) includes a third deflection cylinder (5321), a first deflection control plate (5322) is slidably disposed inside the third deflection cylinder (5321), a third deflection shaft (5325) is rotatably disposed on the inner wall of the third deflection cylinder (5321), the third deflection shaft (5325) passes through the first deflection control plate (5322), a first deflection control ring (5324) is fixedly connected to the surface of the first deflection control plate (5322) and sleeved on the outside of the third deflection shaft (5325), a first deflection control protrusion is provided on the inner wall of the first deflection control ring (5324), a matching arc-shaped first deflection groove is opened on the surface of the third deflection shaft (5325), a fourth control bladder (5323) is provided on the first side of the first deflection control plate (5322), and a fifth control bladder (5326) is provided on the second side. The second deflection drive device (540) includes a fourth deflection cylinder (5421), inside which a second deflection control plate (5422) is slidably disposed. A fourth deflection shaft (5425) is rotatably disposed on the inner wall of the fourth deflection cylinder (5421). The fourth deflection shaft (5425) passes through the second deflection control plate (5422), and a sleeve on the fourth deflection shaft (5425) is fixedly connected to the surface of the second deflection control plate (5422). The outer second deflection control ring (5424) has a second deflection control protrusion on its inner wall. The surface of the fourth deflection shaft (5425) has a matching arc-shaped second deflection groove. The second deflection control plate (5422) has a sixth control bladder (5423) on its first side and a second elastic reset assembly (5426) on its second side. The fifth control bladder (5326) and the sixth control bladder (5423) are in a communicating state.

2. The silicon carbide crystal wire cutting device according to claim 1, characterized in that, The wire cutting device (500) further includes a tensioning assembly (560), which includes a telescopic element (561) and a tensioning wheel (562) installed at the end of the telescopic element (561). The tensioning wheel (562) is located at the center of the line connecting the two wire drive wheels (510).

3. The silicon carbide crystal wire cutting device according to claim 1, characterized in that, It also includes a limiting device (400), which includes a rigid first limiting component (410) and an elastic second limiting component (420). The first limiting component (410) and the second limiting component (420) are parallel to the bearing deflection device (300) and are located on both sides of the silicon carbide crystal (200).

4. The silicon carbide crystal wire cutting device according to claim 3, characterized in that, The second limiting component (420) includes a first mounting base (422) and a second mounting base (424). A pressure plate (421) is rotatably provided on the first side surface of the first mounting base (422), and a guide rod (423) is fixedly provided on the second side surface. The guide rod (423) passes through the second mounting base (424), and an elastic element is provided between the two.

5. The silicon carbide crystal wire cutting device according to claim 1, characterized in that, The hydraulic deflection device also includes a position control sensor for detecting the deflection angle of the hydraulic deflection device, and the position control sensor is electrically connected to the bearing deflection device (300).

6. The silicon carbide crystal wire cutting device according to claim 1, characterized in that, The bearing deflection device (300) further includes a first drive assembly (320) disposed between the two bearing rollers (310) and a second drive assembly (330) for driving the first bearing roller (310) to rotate.

7. A method for wire cutting silicon carbide crystals, characterized in that, Using the silicon carbide crystal wire cutting apparatus according to any one of claims 1-6, the process includes the following steps: S1. Place the silicon carbide crystal (200) at the predetermined position on the upper end of the bearing deflection device (300) to complete the feeding preparation of the silicon carbide crystal (200); S2. Adjust the positions of the first deflection drive device (530) and the second deflection drive device (540) so that the cutting line (570) is in the first cutting posture, and at the same time control the cutting line (570) to move in a specific direction to complete the wire cutting of the silicon carbide crystal (200) surface. S3. During the cutting process, the cutting line (570) is controlled to deflect towards the second cutting posture to complete the continuous cutting of the surface of the silicon carbide crystal (200). S4. After one cut is completed, control the cutting line (570) to return to the first cutting posture, and then control the silicon carbide crystal (200) to rotate in the first direction by a predetermined angle through the bearing deflection device (300). S5. Repeat steps S2-S4 above to complete the continuous cutting of the surface of the silicon carbide crystal (200).

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