A laser-assisted chemical vapor deposition system

Abstract

The application discloses a laser-assisted chemical vapor deposition system and belongs to the technical field of chemical vapor deposition, which can solve the problems of poor deposition quality, high deposition cost and narrow application range of the existing chemical vapor deposition system. The system comprises a deposition module, a laser module and a temperature monitoring module. The deposition module is used for depositing a thin film on a sample surface by using a chemical vapor deposition method. The laser module is connected with the deposition module and is used for providing an irradiation laser beam to the sample surface. The temperature monitoring module is connected with the deposition module and is used for monitoring the temperature of the sample surface. The control module is connected with the laser module and the temperature monitoring module and is used for controlling the power of the irradiation laser beam according to the temperature of the sample surface. The application is used for chemical vapor deposition.

Description

Technical Field

[0001] This invention relates to a laser-assisted chemical vapor deposition system, belonging to the field of chemical vapor deposition technology. Background Technology

[0002] Chemical vapor deposition (CVD) forms thin films through chemical reactions on the sample surface. Traditional CVD is typically performed at high temperatures, which can lead to material instability or incompatibility with the substrate, resulting in quality problems or increased costs. Furthermore, traditional CVD may generate byproducts and contaminants that affect material quality and purity. In some applications, particularly in microelectronic device manufacturing, these impurities and contaminants can severely impact device performance. Additionally, traditional CVD is limited by substrate size and shape, which can restrict its processing of non-planar or irregularly shaped substrates. Especially when fabricating nanostructures or materials with complex shapes, CVD may not provide the necessary control and precision. Summary of the Invention

[0003] This invention provides a laser-assisted chemical vapor deposition system that can solve the problems of poor deposition quality, high deposition cost, and narrow application range of existing chemical vapor deposition systems.

[0004] This invention provides a laser-assisted chemical vapor deposition system, the system comprising:

[0005] Deposition module, used to deposit thin films on the surface of a sample using chemical vapor deposition;

[0006] A laser module, disposed on one side of the deposition module, is used to provide an irradiation laser beam to the sample surface;

[0007] A temperature monitoring module, connected to the deposition module, is used to monitor the temperature of the sample surface;

[0008] The control module, which is connected to both the laser module and the temperature monitoring module, is used to control the power of the irradiation laser beam according to the temperature of the sample surface.

[0009] Optionally, the laser module includes multiple laser units, which are used to provide irradiation laser beams of different wavelengths to the sample surface.

[0010] Optionally, the laser unit includes:

[0011] A laser used to emit a laser beam of a preset wavelength;

[0012] A beam splitter unit is disposed in the output optical path of the laser and is used to split the preset wavelength laser beam into an irradiation laser beam and a monitoring laser beam; the irradiation laser beam is used to irradiate the surface of the sample.

[0013] A monitoring subunit is disposed in the optical path of the monitoring laser beam and is used to monitor the power and spot size of the monitoring laser beam.

[0014] Optionally, the photonic unit includes:

[0015] A reflector is disposed in the output light path of the laser;

[0016] A beam splitter is disposed on the reflected light path or the incident light path of the reflector.

[0017] The transmitted laser beam from the reflector and the reflected laser beam from the beam splitter constitute the monitoring laser beam; the transmitted laser beam from the beam splitter is the irradiation laser beam.

[0018] Optionally, the monitoring subunit includes:

[0019] A power monitoring component is disposed in the transmission optical path of the reflector and is used to monitor the power of the transmitted laser beam of the reflector.

[0020] A spot monitoring device is disposed on the reflected light path of the beam splitter to acquire the spot of the reflected laser beam from the beam splitter; the optical path from the beam splitter to the spot monitoring device is the same as the optical path from the beam splitter to the sample surface.

[0021] Optionally, the power monitoring component includes:

[0022] A focusing element is disposed in the transmission optical path of the reflector and is used to focus the transmission laser beam of the reflector.

[0023] A power monitoring device is disposed in the output optical path of the focusing device to obtain the power of the focused laser beam.

[0024] Optionally, the first beam splitting unit further includes:

[0025] A beam expander is disposed on the incident light path of the beam splitter and is used to expand the incident laser beam of the beam splitter.

[0026] Optionally, the laser unit further includes:

[0027] A beam combiner is disposed on the transmission optical path of the beam splitter and is used to reflect the transmitted laser beam of the beam splitter to the sample surface; the beam combiner of each laser unit can transmit the irradiation laser beam provided by the other laser units.

[0028] Optionally, the laser module further includes:

[0029] An adjustment prism is placed on the incident light path on the sample surface to adjust the laser power of the incident laser beam on the sample surface.

[0030] Optionally, the control module includes:

[0031] A hub, one side of which is connected to the laser and the monitoring subunit;

[0032] The controller, connected to the other side of the hub, is used to send control information to the laser and the monitoring subunit through the hub, and to receive monitoring information sent by the monitoring subunit.

[0033] Optionally, the spot monitoring device is a camera or a beam quality analyzer.

[0034] The beneficial effects that this invention can produce include:

[0035] (1) The laser-assisted chemical vapor deposition system provided by this invention, by setting up a laser module and a temperature monitoring module, can provide a laser beam of appropriate power to the sample surface in the deposition module to assist the chemical vapor deposition process. The laser-assisted technology of this invention can significantly promote chemical reactions, allowing deposition to be carried out at lower temperatures, thus allowing deposition on temperature-sensitive substrates, thereby reducing the risk of material damage and lowering deposition costs. Simultaneously, the direct excitation of the reaction by the laser reduces byproducts and contaminants. Since a given molecule only absorbs photons of a specific wavelength, the selection of photon energy determines which chemical bonds are broken, thus allowing for better control of the film's purity and structure, improving deposition quality.

[0036] (2) This invention uses a laser beam to directly process the sample surface, enabling high-precision local control. This means that material can be precisely deposited in specific areas without affecting other areas. This is very useful for applications requiring high precision, such as manufacturing microstructures or microchips.

[0037] (3) The laser-assisted chemical vapor deposition system provided by the present invention can be used to deposit different types of materials, or even to prepare composite materials, by using single-beam laser or multi-beam laser combination irradiation. Since the laser beam can be easily controlled and adjusted, it has a wide range of application prospects in industrial and research fields.

[0038] (4) The laser-assisted chemical vapor deposition system provided by the present invention can externally adjust and monitor the laser energy density and the spot size can be adjusted, thus enabling coating of different sizes. Attached Figure Description

[0039] Figure 1 A block diagram of a laser-assisted chemical vapor deposition system provided in an embodiment of the present invention;

[0040] Figure 2 This is a schematic diagram of the laser module structure provided in an embodiment of the present invention.

[0041] List of components and reference numerals:

[0042] 100. Laser module; 101. First laser; 102. First reflector; 103. First focusing element; 104. First power monitoring element; 105. First optical path adjustment element; 106. First beam expander; 107. First beam splitter; 108. First beam spot monitoring element; 109. First beam combiner; 111. Second laser; 112. Second optical path adjustment element; 113. Second reflector; 114. Second focusing element; 115. Second power monitoring element; 116. Second beam expander; 117. Second beam splitter; 118. Second beam spot monitoring element; 119. Second beam combiner; 121. Third laser; 122. Third beam expander; 123. Third beam splitter; 124. Third beam spot monitoring device; 125. Third optical path adjustment device; 126. Third reflector; 127. Third focusing device; 128. Third power monitoring device; 129. Adjustment prism; 200. In-situ monitoring module; 300. Deposition module; 301. Vacuum chamber; 400. Temperature monitoring module; 500. Gas delivery module; 600. Waste gas treatment module; 700. Control module; 701. Controller; 702. Hub. Detailed Implementation

[0043] The present invention will now be described in detail with reference to the embodiments, but the present invention is not limited to these embodiments.

[0044] This invention provides a laser-assisted chemical vapor deposition system, such as... Figure 1 and Figure 2 As shown, the system includes:

[0045] Deposition module 300 is used to deposit thin films on the surface of a sample using chemical vapor deposition.

[0046] The deposition module 300 includes a vacuum chamber 301 and a base disposed within the vacuum chamber 301. The base is used to place the sample of the thin film to be deposited.

[0047] A laser module 100 is disposed on one side of the deposition module 300 and is used to provide an irradiation laser beam to the sample surface.

[0048] The laser module 100 includes a laser, a water chiller, and some devices for adjusting and monitoring the laser power.

[0049] Temperature monitoring module 400, connected to deposition module 300, is used to monitor the temperature of the sample surface.

[0050] Typically, an auxiliary heating structure is installed on the base within the vacuum chamber 301 to heat the base and ensure the deposition process reaches the required temperature. The temperature monitoring module 400 can simultaneously monitor both the base temperature and the sample surface temperature. In this embodiment of the invention, the temperature monitoring module 400 can employ an infrared thermal imaging temperature monitoring system to detect the surface temperature of the laser-irradiated base through indirect measurement using infrared thermal imaging.

[0051] In practical applications, chemical vapor deposition systems may also include:

[0052] In-situ monitoring module 200. This in-situ monitoring module 200 can adopt the Rheed system, specifically consisting of an electron beam source, a power supply, and matching optical cables.

[0053] The vacuum cavity 301 of the deposition module 300 is provided with four sealed optical windows, two of which are connected to the in-situ monitoring module 200 and the temperature monitoring module 400 respectively. The irradiation laser beam emitted from the laser module 100 irradiates the sample surface obliquely downward through one optical window to form an elliptical light spot, and the other is the observation window.

[0054] The gas delivery module 500 is connected to the deposition module 300 and is used to deliver the gas required for the chemical vapor deposition process to the deposition module 300.

[0055] The gas delivery module 500 mainly consists of a precursor raw material tank, storage cylinders for carrier gas and dilution gas, delivery pipelines, and flow controllers. The gas delivery module 500 can provide precise, stable, and continuous vapor, solving the problem of serious raw material waste; it also precisely controls the proportions of various metal elements in the mixed raw material vapor.

[0056] The waste gas treatment module 600 is connected to the deposition module 300 and is used to treat the waste gas generated during the chemical vapor deposition process.

[0057] The control module 700 is connected to the laser module 100, the in-situ monitoring module 200, the deposition module 300, the temperature monitoring module 400, and the gas delivery module 500, and is used to control the operation of the laser module 100, the in-situ monitoring module 200, the deposition module 300, the temperature monitoring module 400, and the gas delivery module 500.

[0058] Specifically, the control module 700 can control the power of the irradiation laser beam based on the temperature of the sample surface monitored by the temperature monitoring module 400.

[0059] The control module 700 can automatically and precisely control each step, achieving intelligent control.

[0060] Furthermore, the laser module 100 may include multiple laser units, which are used to provide irradiation laser beams of different wavelengths to the sample surface.

[0061] The present invention does not limit the number of laser units; for example, there may be two, three or more laser units.

[0062] This invention describes the specific structure of a laser module 100, which includes three laser units, as an example.

[0063] First, the specific structure of each laser unit will be explained, referring to... Figure 2 As shown, each laser unit includes:

[0064] A laser is used to emit a laser beam of a preset wavelength. The laser module 100 of the present invention has three lasers, which are respectively referred to as the first laser 101, the second laser 111 and the third laser 121.

[0065] The preset wavelength is a pre-set wavelength, which can be set by those skilled in the art according to actual conditions, and the embodiments of the present invention do not limit this. For example, the first laser 101 can emit a 355nm laser beam, the second laser 111 can emit a 532nm laser beam, and the third laser 121 can emit a 1064nm laser beam.

[0066] The photonics unit is located in the output light path of the laser and is used to split the laser beam of a preset wavelength into an irradiation laser beam and a monitoring laser beam; the irradiation laser beam is used to irradiate the sample surface.

[0067] Specifically, the photonic unit may include:

[0068] A reflector is disposed in the output optical path of the laser; the laser module 100 of this invention has three reflectors, referred to as the first reflector 102, the second reflector 113, and the third reflector 126. In practical applications, the first reflector 102 is a high-reflection mirror that reflects a 355nm laser beam, the second reflector 113 is a high-reflection mirror that reflects a 532nm laser beam, and the third reflector 126 is a high-reflection mirror that reflects a 1064nm laser beam.

[0069] A beam splitter is disposed in the reflected light path or the incident light path of a reflector; in practical applications, the beam splitter can be a beam splitter plate. The laser module 100 of this invention has three beam splitters, referred to as the first beam splitter 107, the second beam splitter 117, and the third beam splitter 123, respectively.

[0070] The transmitted laser beam from the reflector and the reflected laser beam from the beam splitter constitute the monitoring laser beam; the transmitted laser beam from the beam splitter is the irradiation laser beam.

[0071] The monitoring subunit is located in the optical path of the monitoring laser beam and is used to monitor the power and spot size of the monitoring laser beam.

[0072] Specifically, the monitoring sub-units include:

[0073] A power monitoring component is installed in the transmission optical path of the reflector to monitor the power of the transmitted laser beam of the reflector.

[0074] A spot monitoring element is disposed on the reflected optical path of the beam splitter to acquire the spot of the reflected laser beam from the beam splitter; the optical path from the beam splitter to the spot monitoring element is the same as the optical path from the beam splitter to the sample surface. In practical applications, the spot monitoring element can be a camera or a beam quality analyzer. The laser module 100 of this invention has three spot monitoring elements, referred to as the first spot monitoring element 108, the second spot monitoring element 118, and the third spot monitoring element 124.

[0075] The power monitoring component may include:

[0076] A focusing element, disposed in the transmission optical path of the reflector, is used to focus the transmitted laser beam from the reflector. The laser module 100 of this invention has three focusing elements, designated as the first focusing element 103, the second focusing element 114, and the third focusing element 127. In practical applications, the first focusing element 103 is a 355nm focusing lens, the second focusing element 114 is a 532nm focusing lens, and the third focusing element 127 is a 1064nm focusing lens.

[0077] A power monitoring element is disposed in the output optical path of the focusing element to obtain the power of the focused laser beam. In practical applications, the power monitoring element can be a photodiode, an energy meter, or a power meter. The laser module 100 of this invention has three power monitoring elements, referred to as the first power monitoring element 104, the second power monitoring element 115, and the third power monitoring element 128.

[0078] Furthermore, the first beam-splitting unit also includes:

[0079] A beam expander, disposed in the incident light path of the beam splitter, is used to expand the incident laser beam of the beam splitter. The laser module 100 of this invention has three beam expanders, designated as the first beam expander 106, the second beam expander 116, and the third beam expander 122. In practical applications, the first beam expander 106 is a 355nm beam expander, the second beam expander 116 is a 532nm beam expander, and the third beam expander 122 is a 1064nm beam expander.

[0080] The laser unit also includes:

[0081] A beam combiner, disposed in the transmission path of a beam splitter, is used to reflect the transmitted laser beam from the beam splitter to the sample surface; each beam combiner of a laser unit can transmit the irradiation laser beams provided by the other laser units. The laser module 100 of this invention has two beam combiners, designated as the first beam combiner 109 and the second beam combiner 119. In practical applications, the first beam combiner 109 is a dichroic mirror that reflects a 355nm laser beam and transmits a 1064nm laser beam, while the second beam combiner 119 is a dichroic mirror that reflects a 532nm laser beam and transmits both 355nm and 1064nm laser beams.

[0082] Preferably, the laser module 100 also includes:

[0083] An adjusting prism 129 is positioned on the incident light path on the sample surface to adjust the laser power of the incident laser beam on the sample surface. In practical applications, the adjusting prism 129 can be a Glan Taylor prism.

[0084] Furthermore, the laser unit also includes an optical path adjustment component for changing the direction of the irradiating laser beam. The laser module 100 of this invention has three optical path adjustment components, referred to as the first optical path adjustment component 105, the second optical path adjustment component 112, and the third optical path adjustment component 125. In practical applications, the first optical path adjustment component 105 is a high-reflection mirror reflecting a 355nm laser beam, the second optical path adjustment component 112 is a high-reflection mirror reflecting a 532nm laser beam, and the third optical path adjustment component 125 is a high-reflection mirror reflecting a 1064nm laser beam.

[0085] The three laser units in the laser module 100 of the present invention can be referred to as the first laser unit, the second laser unit, and the third laser unit, respectively.

[0086] refer to Figure 2 As shown, in the first laser unit, the first laser 101 emits a 355nm laser beam, which is then reflected twice by the first reflector 102 and the first optical path adjustment member 105. Next, the beam is expanded by the first beam expander 106, and then split into two laser beams by the first beam splitter 107. One laser beam reaches the first spot monitoring member 108 to form a spot, while the other laser beam is reflected by the first beam combiner 109 and passes through the adjustment prism 129 to irradiate the sample surface inside the vacuum cavity 301. The first focusing member 103 is disposed in the transmission optical path of the first reflector 102 to focus the 355nm laser beam transmitted by the first reflector 102 onto the first power monitoring member 104 for power monitoring.

[0087] The first focusing element 103 and the first power monitoring element 104 are power monitoring devices for the first laser 101, which can monitor the laser power or energy at the sample irradiated in the vacuum cavity 301 in real time. The first beam expander 106 can adjust the size of the 355nm laser spot at the sample to achieve different coating requirements. The first spot monitoring element 108 monitors the beam quality of the 355nm laser at the sample. The optical path from the first beam splitter 107 to the first spot monitoring element 108 is the same as the optical path from the first beam splitter 107 to the sample in the vacuum cavity 301. The size of the spot at the sample can be obtained by observing the spot at the first spot monitoring element 108. The first power monitoring element 104, in combination with the first spot monitoring element 108, can calculate the laser power density or energy density at the sample. Furthermore, the control module 700 includes a display unit, which can display the laser power density or energy density at the sample in real time.

[0088] In the second laser unit, the second laser 111 emits a 532nm laser beam, which is then reflected twice by the second optical path adjustment component 112 and the second reflector 113. Next, the beam is expanded by the second beam expander 116, and then split into two laser beams by the second beam splitter 117. One laser beam reaches the second spot monitoring component 118 to form a spot, while the other laser beam is reflected by the second beam combiner 119 and passes through the adjustment prism 129 to illuminate the sample surface inside the vacuum cavity 301. The second focusing component 114 is disposed in the transmission optical path of the second reflector 113 to focus the 532nm laser beam transmitted by the second reflector 113 onto the second power monitoring component 115 for power monitoring.

[0089] The second focusing element 114 and the second power monitoring element 115 are power monitoring devices for the second laser 111, which can monitor the laser power or energy irradiated at the sample in the vacuum cavity 301 in real time. The second beam expander 116 can adjust the size of the 532nm laser spot at the sample to achieve different coating requirements. The second spot monitoring element 118 monitors the beam quality of the 532nm laser at the sample. The optical path from the second beam splitter 117 to the second spot monitoring element 118 is the same as the optical path from the second beam splitter 117 to the sample in the vacuum cavity 301. The size of the spot at the sample can be obtained by observing the spot at the second spot monitoring element 118. The second power monitoring element 115, in combination with the second spot monitoring element 118, can calculate the laser power density or energy density at the sample, which can be displayed in real time by the display unit in the control module 700.

[0090] In the third laser unit, the third laser 121 emits a 1064nm laser beam, which is then expanded by the third beam expander 122 and split into two beams by the third beam splitter 123. One beam reaches the third spot monitoring device 124 to form a spot, while the other beam is reflected twice by the third optical path adjustment device 125 and the third reflector 126, and then passes through the first beam combiner 109, the second beam combiner 119, and the adjustment prism 129 before irradiating the sample surface inside the vacuum cavity 301. The third focusing device 127 is disposed in the transmission optical path of the third reflector 126 and is used to focus the 1064nm laser beam transmitted by the third reflector 126 onto the third power monitoring device 128 for power monitoring.

[0091] The third focusing element 127 and the third power monitoring element 128 are power monitoring devices for the third laser 121, which can monitor the laser power or energy at the sample irradiated in the vacuum cavity 301 in real time. The third beam expander 122 can adjust the size of the 1064nm laser spot at the sample to achieve different coating requirements. The third spot monitoring element 124 monitors the beam quality of the 1064nm laser at the sample. The optical path from the third beam splitter 123 to the third spot monitoring element 124 is the same as the optical path from the third beam splitter 123 to the sample in the vacuum cavity 301. The size of the spot at the sample can be obtained by observing the spot at the third spot monitoring element 124. The third power monitoring element 128, in combination with the third spot monitoring element 124, can calculate the laser power density or energy density at the sample, which can be displayed in real time through the display unit in the control module 700.

[0092] Furthermore, the control module 700 also includes:

[0093] Hub 702 is connected to the laser and monitoring subunit on one side; specifically, one side of hub 702 is connected to the first laser 101, the first power monitoring device 104, the first spot monitoring device 108, the second laser 111, the second power monitoring device 115, the second spot monitoring device 118, the third laser 121, the third power monitoring device 128, the third spot monitoring device 124 and the vacuum cavity 301 respectively via wires.

[0094] The controller 701, connected to the other side of the hub 702, is used to send control information to the laser and the monitoring subunit through the hub 702, and to receive monitoring information sent by the monitoring subunit.

[0095] In this embodiment, the controller 701 can control any one of the three laser units to operate according to actual needs, or it can control any two or all three laser units to operate simultaneously. This invention does not limit this.

[0096] This invention, by incorporating a laser module 100 and a temperature monitoring module 400, can provide a suitably powerful laser beam to the sample surface in the deposition module 300 to assist the chemical vapor deposition process. The laser-assisted technology employed in this invention can significantly promote chemical reactions, allowing deposition to occur at lower temperatures. This enables deposition on temperature-sensitive substrates, thereby reducing the risk of material damage and lowering deposition costs. Simultaneously, direct laser excitation of the reaction reduces byproducts and contaminants. Since a given molecule only absorbs photons of a specific wavelength, the selection of photon energy determines which chemical bonds are broken, thus allowing for better control over the purity and structure of the thin film and improving deposition quality.

[0097] This invention uses a laser beam to directly process the sample surface, enabling high-precision local control. This means that material can be precisely deposited in specific areas without affecting other areas. This is extremely useful for applications requiring high precision, such as the fabrication of microstructures or microchips.

[0098] This invention employs single-beam laser or multi-beam laser combination irradiation. Since the laser beam can be easily controlled and adjusted, it can be used to deposit different types of materials, and even to prepare composite materials, which makes it have broad application prospects in industrial and research fields.

[0099] The present invention allows for external adjustment and monitoring of laser energy density, and the spot size is adjustable, thus enabling coatings of different sizes.

[0100] The above description is merely a few embodiments of this application and is not intended to limit this application in any way. Although this application discloses preferred embodiments as described above, it is not intended to limit this application. Any changes or modifications made by those skilled in the art without departing from the scope of the technical solution of this application using the disclosed technical content are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A laser-assisted chemical vapor deposition system, characterized in that, The system includes: Deposition module, used to deposit thin films on the surface of a sample using chemical vapor deposition; A laser module, disposed on one side of the deposition module, is used to provide an irradiation laser beam to the sample surface; A temperature monitoring module, connected to the deposition module, is used to monitor the temperature of the sample surface; A control module, connected to both the laser module and the temperature monitoring module, is used to control the power of the irradiating laser beam based on the temperature of the sample surface. The laser module includes multiple laser units, which are used to provide irradiation laser beams of different wavelengths to the sample surface. The laser unit includes: a laser for emitting a laser beam of a preset wavelength; a beam splitter unit disposed in the output optical path of the laser for splitting the laser beam of the preset wavelength into an irradiation laser beam and a monitoring laser beam; the irradiation laser beam is used to irradiate the surface of the sample; and a monitoring subunit disposed in the optical path of the monitoring laser beam for monitoring the power and spot size of the monitoring laser beam. The beam splitter unit includes: a reflector disposed in the output light path of the laser; and a beam splitter disposed in the reflected light path or the incident light path of the reflector; the transmitted laser beam of the reflector and the reflected laser beam of the beam splitter constitute the monitoring laser beam; the transmitted laser beam of the beam splitter is the irradiation laser beam. The laser unit further includes a beam combiner, disposed in the transmission optical path of the beam splitter, for reflecting the transmitted laser beam of the beam splitter to the sample surface; the beam combiner of each laser unit can transmit the irradiation laser beam provided by the other laser units.

2. The system according to claim 1, characterized in that, The monitoring subunit includes: A power monitoring component is disposed in the transmission optical path of the reflector and is used to monitor the power of the transmitted laser beam of the reflector. A spot monitoring device is disposed on the reflected light path of the beam splitter to acquire the spot of the reflected laser beam from the beam splitter; the optical path from the beam splitter to the spot monitoring device is the same as the optical path from the beam splitter to the sample surface.

3. The system according to claim 2, characterized in that, The power monitoring component includes: A focusing element is disposed in the transmission optical path of the reflector and is used to focus the transmission laser beam of the reflector. A power monitoring device is disposed in the output optical path of the focusing device to obtain the power of the focused laser beam.

4. The system according to claim 1, characterized in that, The photonic unit further includes: A beam expander is disposed on the incident light path of the beam splitter and is used to expand the incident laser beam of the beam splitter.

5. The system according to claim 1, characterized in that, The laser module also includes: An adjustment prism is placed on the incident light path on the sample surface to adjust the laser power of the incident laser beam on the sample surface.

6. The system according to claim 1, characterized in that, The control module includes: A hub, one side of which is connected to the laser and the monitoring subunit; The controller, connected to the other side of the hub, is used to send control information to the laser and the monitoring subunit through the hub, and to receive monitoring information sent by the monitoring subunit.

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