Substrate processing apparatus and method

Abstract

This application relates to a substrate processing apparatus and method. The substrate processing method includes spraying a desiccant onto a substrate, replacing the water in the substrate with the desiccant; cooling the substrate, causing the solute in the desiccant to precipitate and solidify at the bottom of a deep cavity in the substrate due to the temperature decrease; blowing purge gas onto the substrate, causing the solvent of the desiccant to evaporate from the inside of the deep cavity to the outside; when the solvent inside the deep cavity has completely evaporated to the outside, leaving a solid solute, heating the substrate to a temperature higher than the sublimation point of the solute, causing the solute to sublimate and be discharged to the outside. After the desiccant replaces the water in the substrate, the desiccant undergoes solid-liquid separation, with the solvent evaporating first, followed by the solute evaporating through sublimation. This eliminates the pattern collapse phenomenon caused by the large capillary forces in the drying stage of conventional technologies. Furthermore, since expensive chemical solutions with low surface tension are not required, the cost is lower.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to substrate processing apparatus and methods. Background Technology

[0002] In the manufacturing process of semiconductor integrated circuit devices, wet cleaning of wafers is frequently performed. After wet cleaning, the wafers also need to be dried to prevent watermarks or other residues from remaining on the wafer surface, which could affect subsequent processes.

[0003] As the feature size of semiconductor integrated circuit devices continues to shrink and the aspect ratio increases, pattern collapse is more likely to occur during the drying process, affecting wafer yield. The main reason for pattern collapse during drying is the large capillary force when the solution is dried in the deep cavity.

[0004] The traditional approach is to find chemical solutions with low surface tension or reduce the contact angle. However, chemical solutions with low surface tension are scarce. Furthermore, reducing the contact angle is costly, ineffective, and introduces new technical problems. Summary of the Invention

[0005] Therefore, it is necessary to overcome the shortcomings of the prior art and provide a substrate processing apparatus and method that can prevent the pattern from collapsing during the drying stage.

[0006] The technical solution is as follows: A substrate processing method, the substrate processing method comprising:

[0007] A desiccant is sprayed onto a substrate to replace the water in the substrate. The desiccant is a mixture of a sublimable substance and a volatile organic solvent.

[0008] Cooling the substrate causes the solute of the desiccant to precipitate and solidify at the bottom of the deep cavity of the substrate due to the decrease in temperature.

[0009] A purge gas is provided and blown toward the substrate, causing the solvent of the desiccant to evaporate from the inside of the deep cavity to the outside;

[0010] Sublimation treatment: After the solvent inside the deep cavity has completely evaporated, the substrate is heated to a temperature higher than the sublimation point of the solute, causing the solute to sublimate and be discharged.

[0011] In one embodiment, the step of spraying water onto the substrate is included before the step of spraying the desiccant onto the substrate, replacing the chemical solution in the substrate with water.

[0012] In one embodiment, after the step of replacing the chemical solution in the substrate with water, the method further includes: heating the substrate to maintain the temperature of the substrate within a first preset range, the first preset range being greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

[0013] In one embodiment, the saturation of the desiccant is controlled at a set value.

[0014] In one embodiment, the step of spraying the desiccant onto the substrate further includes: heating the substrate to maintain the temperature of the substrate within a second preset range, the second preset range being greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

[0015] In one embodiment, during the cooling substrate step, the temperature of the substrate is controlled within a third preset range, which is less than the crystallization temperature of the solute in the desiccant.

[0016] In one embodiment, the step of providing purge gas further includes placing the front side of the substrate in a vacuum environment.

[0017] In one embodiment, during the sublimation process, the substrate is heated to maintain its temperature within a fourth preset range, which is greater than or equal to the sublimation point of the solute.

[0018] In one embodiment, the sublimation process further includes: turning on the vacuum device to remove the sublimated gas.

[0019] In one embodiment, the front side of the substrate is heated during the sublimation process.

[0020] In one embodiment, the sublimation process further includes placing the front side of the substrate in a vacuum environment.

[0021] A substrate processing apparatus, the substrate processing apparatus comprising:

[0022] Support mechanism, the support mechanism being used to support the substrate;

[0023] A desiccant supply mechanism is used to spray a desiccant onto the substrate, replacing the water in the substrate with the desiccant.

[0024] A cooling mechanism is provided to reduce the temperature of the substrate, so that the solute of the desiccant will precipitate and solidify at the bottom of the deep cavity of the substrate due to the decrease in temperature.

[0025] A purging mechanism is provided to provide purging gas to the substrate, so that the solvent of the desiccant evaporates from the inside of the deep cavity to the outside;

[0026] A heating mechanism is used to heat the substrate so that the solute inside the deep cavity sublimates and is discharged outward.

[0027] In one embodiment, the substrate processing apparatus further includes a water supply mechanism for spraying water onto the substrate to replace the chemical solutions in the substrate.

[0028] In one embodiment, the substrate processing apparatus further includes a process chamber; the support mechanism is disposed inside the process chamber; the liquid outlet of the desiccant supply mechanism is located inside the process chamber and is disposed above the front surface of the substrate; the air outlet of the purging mechanism is located inside the process chamber and is disposed above the front surface of the substrate.

[0029] In one embodiment, the substrate processing apparatus further includes a vacuum pumping device for evacuating the process chamber to provide a vacuum environment for the front side of the substrate.

[0030] In one embodiment, the substrate processing apparatus further includes a vacuum device; the vacuum device is used to remove the evaporated solvent; the vacuum device is also used to remove the gas generated by the sublimation of the solute.

[0031] In one embodiment, the cooling mechanism includes a first housing disposed at intervals below the substrate, and a cold air supply mechanism connected to the first housing; the first housing is provided with a plurality of first vent holes disposed opposite to the back side of the substrate.

[0032] In one embodiment, the heating mechanism includes a first heating mechanism disposed on the front side of the substrate, and / or a second heating mechanism disposed on the back side of the substrate.

[0033] In one embodiment, the first heating mechanism includes a second housing spaced apart above the front side of the substrate, and a plurality of first heating lamps spaced apart on the second housing facing the substrate surface; the projection of the second housing onto the substrate along the central axis of the substrate covers a portion of the substrate; the support mechanism can drive the substrate to rotate.

[0034] In one embodiment, the substrate processing apparatus further includes a moving mechanism connected to the first heating mechanism for driving the first heating mechanism to move in a plane parallel to the substrate surface.

[0035] The aforementioned substrate processing apparatus and method, since the desiccant is a mixture of easily sublimable substances and easily volatile organic solvents, after the desiccant replaces the water in the substrate, the desiccant is separated into solid and liquid components. The solvent is first evaporated outwards, and then the solute is evaporated through sublimation. Thus, the pattern collapse phenomenon caused by the large capillary force in the drying stage of conventional technology is eliminated. In addition, since there is no need to use expensive chemical solutions with low surface tension, the cost is lower. Attached Figure Description

[0036] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an undue limitation of this application.

[0037] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram of the flow structure of a substrate processing method according to an embodiment of this application;

[0039] Figure 2 This is a schematic diagram of a substrate deep cavity filled with chemical solution in a substrate processing method according to an embodiment of this application;

[0040] Figure 3 This is a schematic diagram showing that the deep cavity of the substrate is filled with water in a substrate processing method according to an embodiment of this application;

[0041] Figure 4 This is a schematic diagram showing that a deep cavity of a substrate is filled with a desiccant in a substrate processing method according to an embodiment of this application;

[0042] Figure 5 This is a schematic diagram of the solid-liquid separation of the desiccant inside the deep cavity of the substrate in a substrate processing method according to an embodiment of this application.

[0043] Figure 6 This is a schematic diagram showing the solvent evaporation of the desiccant inside the deep cavity of the substrate in a substrate processing method according to an embodiment of this application.

[0044] Figure 7 This is a schematic diagram of the solid solute sublimation inside the deep cavity of the substrate in a substrate processing method according to an embodiment of this application.

[0045] Figure 8 This is a schematic diagram of the structure of a substrate processing apparatus according to an embodiment of this application;

[0046] Figure 9 This is a schematic diagram of a substrate processing apparatus according to an embodiment of the present application, in which a cooling mechanism and a second heating mechanism are integrated together.

[0047] Figure 10 This is a schematic diagram of the structure in which the air extraction device and the first heating mechanism are integrated together in a substrate processing apparatus according to an embodiment of this application.

[0048] 10. Substrate; 11. Deep cavity; 20. Support mechanism; 30. Desiccant supply mechanism; 31. Liquid outlet; 40. Cooling mechanism; 41. First housing; 411. First vent; 50. Purge mechanism; 51. Air outlet; 61. First heating mechanism; 611. Second housing; 612. First heating lamp; 613. Second vent; 62. Second heating mechanism; 621. Second heating lamp; 70. Water supply mechanism; 71. Water outlet; 80. Process chamber; 91. Vacuum device; 911. Suction end; 92. Air extraction device; 921. Suction pipe. Detailed Implementation

[0049] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0050] It should be noted that the substrate in this embodiment includes, but is not limited to, semiconductor workpieces, specifically, wafers, and will be used as an example for further explanation.

[0051] Traditionally, when the depth and width of the pattern gaps on a wafer are large, the pattern is prone to collapse during the drying process, which affects the wafer yield. The main reason for the pattern collapse during the drying process is the large capillary force when the solution is drying in the deep cavity.

[0052] Based on this, see Figure 1 , Figure 1 This illustration shows a schematic flowchart of a substrate processing method according to an embodiment of this application. The substrate processing method provided in this embodiment includes:

[0053] Step S100, please refer to the following: Figure 2 and Figure 3 , Figure 2 This diagram illustrates a substrate processing method according to an embodiment of the present application, in which the deep cavity 11 of the substrate 10 is filled with a chemical solution. Figure 3This diagram illustrates a substrate processing method according to an embodiment of this application, where the deep cavity 11 of the substrate 10 is filled with water. Water is sprayed onto the surface of the substrate 10, and the water sprayed onto the surface of the substrate 10 can force the chemical solution in the deep cavity 11 outwards, replacing the chemical solution in the substrate 10 with water, i.e., from... Figure 2 The status shown is replaced with Figure 3 The state shown;

[0054] In step S100, the substrate 10 is heated to maintain the temperature of the substrate 10 within a first preset range, which is greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

[0055] Specific desiccants include, for example, naphthalene-isopropanol / ethanol, iodine-isopropanol / ethanol mixtures, etc. Of course, other easily sublimable substances combined with volatile organic solvents can also be flexibly selected according to actual needs. It should be noted that the sublimation temperature of iodine is 45℃-77℃, and the sublimation temperature of naphthalene is 145℃-200℃. The chemical supply system heats the solution to a higher temperature (e.g., 25℃-60℃) to ensure a high saturation concentration of the solute (e.g., 70-90%), maintaining a constant solution temperature and substrate temperature to prevent solute precipitation. Specifically, the first preset range is selected as 25℃-60℃, ensuring that the desiccant does not precipitate due to temperature drop during spraying onto the substrate 10 (and the temperature of the desiccant on the substrate 10 before and after spraying is between 25℃-60℃). Of course, other values ​​can be selected for the first preset range, depending on the physical properties of the desiccant. This is not limited here, as long as it can be used to heat the substrate 10 to ensure that the solute in the desiccant does not precipitate.

[0056] Step S200, please refer to Figure 3 and Figure 4 , Figure 4 This diagram illustrates a substrate processing method according to an embodiment of this application, in which a deep cavity 11 of the substrate 10 is filled with a desiccant. The desiccant is sprayed onto the substrate 10, and the sprayed desiccant can squeeze water out of the deep cavity 11, replacing the water in the substrate 10 with the desiccant, i.e., from... Figure 3 The status shown is replaced with Figure 4 The state shown is indicated. The desiccant is a mixture comprising easily sublimable substances and volatile organic solvents.

[0057] Optionally, the saturation of the desiccant is controlled within, but is not limited to, 70%-90%. Specific examples include 70%, 72%, 75%, 79%, 80%, 83%, 86%, 88%, or 90%, etc. Of course, the saturation of the desiccant can also be set to 30%-70% according to actual needs. The inventors have found that the higher the selected saturation value of the desiccant, the more crystals will precipitate subsequently. The precipitated solid solute fills the gaps in the pattern, which helps prevent the pattern from collapsing.

[0058] Specifically, heating the substrate 10 maintains the temperature of the substrate 10 within a second preset range, which is greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

[0059] Specifically, the second preset range is selected to be the same as the first preset range, for example, 25℃-60℃, which allows the desiccant to successfully replace the water on the substrate 10 during the spraying process without any desiccant solute precipitation. Alternatively, it can be higher than the first preset range. The second preset range can be different from the first preset range, and can be flexibly adjusted and set according to actual needs. There is no limitation here, as long as it can be used to heat the substrate 10 to ensure that the solute in the desiccant is not precipitated.

[0060] Step S300, please refer to Figure 4 and Figure 5 , Figure 5 This diagram illustrates the solid-liquid separation of the desiccant inside the deep cavity 11 of the substrate 10 in a substrate processing method according to an embodiment of this application. Cooling the substrate 10 causes the solute of the desiccant to precipitate and solidify at the bottom of the deep cavity 11 of the substrate 10 due to the decrease in temperature. Figure 4 The status shown is replaced with Figure 5 The state shown;

[0061] Optionally, the temperature of the substrate 10 is controlled within a third preset range, which is lower than the crystallization temperature of the desiccant solute. Specifically, the third preset range is selected, for example, as -25°C to 25°C. Of course, other values ​​can also be selected for the third preset range, depending on the physical properties of the solute, as long as it can lower the temperature of the substrate 10 and allow the desiccant solute to form a solid after cooling.

[0062] Step S400, please refer to Figure 5 and Figure 6 , Figure 6 This diagram illustrates the evaporation of solvent from the desiccant inside the deep cavity 11 of the substrate 10 in a substrate processing method according to an embodiment of this application. A purge gas is provided and blown onto the substrate 10, causing the solvent from the desiccant to evaporate from the inside of the deep cavity 11 outwards. Figure 5 The status shown is replaced with Figure 6 The state shown;

[0063] Specifically, the purge gas is a gas that does not react with the solvent or solute, including but not limited to inert gases such as nitrogen, helium, argon, xenon, etc., and of course, hydrogen, carbon dioxide, etc. can also be selected. In this embodiment, nitrogen, which is abundant in the atmosphere and easy to produce, is specifically used as the purge gas.

[0064] Optionally, during the cooling process of the substrate 10, purge gas is simultaneously blown onto the substrate 10. As the purge gas acts on the front side of the substrate 10, it accelerates the solidification of the solute at the bottom of the deep cavity 11 and causes the solvent to evaporate from the inside of the deep cavity 11 to the outside, thereby reducing the process time. Ultimately, the remaining space between the patterns on the substrate 10 is entirely composed of desiccant solid solute.

[0065] Specifically, the front side of the substrate 10 is placed in a vacuum environment, that is, a front vacuum system is introduced. In this way, during the process of solute precipitation and solidification at the bottom of the deep cavity 11, the boiling point of the solvent is reduced under the action of the vacuum system, and with the action of the purging gas, it can evaporate quickly.

[0066] Step S500, please refer to Figure 6 and Figure 7 , Figure 7 This diagram illustrates the sublimation of solid solute inside the deep cavity 11 of substrate 10 in a substrate processing method according to an embodiment of this application. In the sublimation process, after all the solvent inside the deep cavity 11 has completely evaporated, the bottom of the deep cavity 11 will remain entirely in a solid state as solute. Specifically, this involves stopping the cooling process and stopping the supply of purge gas, and then heating the substrate 10 to a temperature higher than the sublimation point of the solute, causing the solute to sublimate and dissipate outwards. Figure 6 The status shown is replaced with Figure 7 The state shown.

[0067] Optionally, heating the substrate 10 maintains the temperature of the substrate 10 within a fourth preset range, where the fourth preset range is greater than or equal to the sublimation point of the solute.

[0068] Specifically, the fourth preset range is, for example, 25℃-200℃. This temperature range is greater than the sublimation point of the solute, thus enabling the sublimation of the solute.

[0069] In one embodiment, during the sublimation process, a vacuum device 92 is activated to promptly remove the preheated sublimation gas, thereby preventing the sublimated solute from cooling and adhering back to the surface of the substrate 10, thus preventing contamination. Furthermore, when the vacuum device 92 is operating, it also simultaneously removes vapor from the surface of the substrate 10, thus accelerating the sublimation of the solute.

[0070] The inventors discovered that during the sublimation process, when the back side of the substrate 10 is heated, the solute at the bottom of the deep cavity 11 will be vaporized first, impacting the solute at the top of the deep cavity 11 that has not yet vaporized, thus causing contamination defects.

[0071] Based on this, during the sublimation process, the front side of the substrate 10 is heated, while the back side of the substrate 10 is not heated. Compared with heating the back side of the substrate 10, the sublimation effect of the solute inside the deep cavity 11 is better, and contamination can be avoided.

[0072] Optionally, the front side of the substrate 10 is placed in a vacuum environment, that is, a vacuum system is introduced into the front side of the substrate 10. In this way, the heating device and the vacuum system on the front side of the substrate 10 are turned on simultaneously. Under the synergistic effect of the two devices, the sublimation temperature of the solute is reduced and the sublimation rate is increased, thereby reducing the process time.

[0073] The above-described substrate processing method uses a mixture of easily sublimable substances and volatile organic solvents as the desiccant. After the desiccant replaces the water in the substrate 10, it causes solid-liquid separation. The solvent evaporates first, and then the solute evaporates through sublimation. This eliminates the pattern collapse caused by the large capillary force in the drying stage of traditional technologies. In addition, the cost is lower because it does not require expensive chemical solutions with low surface tension.

[0074] Please see Figures 8 to 10 , Figure 8 A schematic diagram of a substrate processing apparatus according to an embodiment of this application is shown. Figure 9 This diagram shows a schematic representation of a substrate processing apparatus according to an embodiment of the present application, in which a cooling mechanism 40 and a second heating mechanism 62 are integrated together. Figure 10 This diagram illustrates a substrate processing apparatus according to an embodiment of the present application, in which the vacuum device 92 and the first heating mechanism 61 are integrated. In one embodiment, a substrate processing apparatus includes: a support mechanism 20, a desiccant supply mechanism 30, a cooling mechanism 40, a purging mechanism 50, and a heating mechanism. The support mechanism 20 supports a substrate 10. The desiccant supply mechanism 30 sprays desiccant onto the substrate 10, replacing water in the substrate 10 with desiccant. The cooling mechanism 40 lowers the temperature of the substrate 10, causing the solute of the desiccant to precipitate and solidify at the bottom of the deep cavity 11 of the substrate 10 due to the temperature decrease. The purging mechanism 50 provides purging gas to the substrate 10, causing the solvent of the desiccant to evaporate from the inside of the deep cavity 11. The heating mechanism heats the substrate 10, causing the solute inside the deep cavity 11 to sublimate and be discharged.

[0075] The aforementioned substrate processing apparatus uses a mixture of easily sublimable substances and volatile organic solvents as the desiccant. After the desiccant replaces the water in the substrate 10, it causes solid-liquid separation, first evaporating the solvent and then evaporating the solute through sublimation. This eliminates the pattern collapse phenomenon caused by the large capillary force in the drying stage of conventional technologies. Furthermore, since it does not require expensive chemical solutions with low surface tension, the cost is lower.

[0076] It should be noted that the support mechanism 20 is used to keep the substrate 10 in a horizontal or basically horizontal state with the opening of the deep cavity 11 facing upward. This way, when the desiccant is sprayed onto the surface of the substrate 10, the desiccant can smoothly enter the interior of the deep cavity 11 and completely squeeze the water in the gaps between the patterns of the substrate 10 outward.

[0077] Please see Figure 8 In one embodiment, the substrate processing apparatus further includes a water supply mechanism 70. The water supply mechanism 70 is used to spray water onto the substrate 10, replacing the chemical solutions in the substrate 10 with water. Thus, after the substrate 10 has undergone relevant chemical treatment, the water supply mechanism 70 sprays water onto the substrate 10 to clean it, ensuring that all chemical solutions on the substrate 10 are completely removed, before proceeding to the drying process of the substrate 10.

[0078] Please see Figure 8 In one embodiment, the substrate processing apparatus further includes a process chamber 80. A support mechanism 20 is disposed inside the process chamber 80. The liquid outlet 31 of the desiccant supply mechanism 30 is located inside the process chamber 80 and is disposed above the front surface of the substrate 10. In addition, the air outlet 51 of the purging mechanism 50 is located inside the process chamber 80 and is disposed above the front surface of the substrate 10.

[0079] Please see Figure 8 In one embodiment, the water outlet 71 of the water supply mechanism 70 is located inside the process chamber 80 and is disposed above the front side of the substrate 10.

[0080] Please see Figure 8 In one embodiment, the substrate processing apparatus further includes a vacuum pumping device 91. The vacuum pumping device 91 is used to evacuate the process chamber 80 to provide a vacuum environment for the front side of the substrate 10. Specifically, the vacuum pumping device 91 is disposed on the chamber wall of the process chamber 80, and the suction end 911 of the vacuum pumping device 91 is connected to the process chamber 80. Thus, before the substrate processing apparatus operates, the process chamber 80 is evacuated to the required vacuum level by the vacuum pumping device 91, thereby reducing the boiling point and sublimation point of the solvent and solute in the subsequent desiccant, and consequently shortening the process time.

[0081] Please see Figure 8In one embodiment, the substrate processing apparatus further includes a vacuum device 92. The vacuum device 92 is used to remove the evaporated solvent. The vacuum device 92 is also used to remove the gas generated by the sublimation of the solute. Thus, during the process of the solid solute being heated and sublimating to generate gas, the vacuum device 92 is simultaneously activated to remove and discharge the gas generated by the sublimation of the solid solute, thereby preventing the solute from cooling and sticking back to form contaminants. Furthermore, when the vacuum device 92 is operating, it can also simultaneously remove vapor from the surface of the substrate 10, which also accelerates the sublimation of the solute.

[0082] In one embodiment, the extraction device 92 and the vacuuming device 91 share a common extraction pipeline, eliminating the need for a separate extraction pipeline for the extraction device 92, thus simplifying the device structure and reducing costs. Specifically, valves are installed at both ends of the shared extraction pipeline. By controlling the opening and closing of the valves, the extraction pipeline can be connected to either the extraction device 92 or the vacuuming device 91. When the extraction pipeline is connected to the extraction device 92, the extraction device 92, which includes, but is not limited to, a vacuum pump or a blower, operates to extract the vaporized solution and sublimated desiccant. After the vaporized solution and sublimated desiccant are extracted, the desiccant is recovered by an externally designed desiccant recovery device for recycling, reducing costs. Furthermore, when the extraction pipeline is connected to the vacuuming device 91, the vacuuming device 91 acts on the process chamber 80, creating a vacuum environment inside the process chamber 80.

[0083] Please see Figures 8 to 10 In one embodiment, the cooling mechanism 40 includes a first housing 41 spaced below the substrate 10 and a cold air supply mechanism (not shown) connected to the first housing 41. The first housing 41 has a plurality of first vent holes 411 disposed opposite to the back surface of the substrate 10. Thus, when the cooling mechanism 40 is in operation, the cold air supply mechanism inputs cold air into the first housing 41 and outputs it outward through the first vent holes 411. When the cold air contacts the back surface of the substrate 10, it reduces the temperature of the substrate 10. Furthermore, since the first housing 41 is spaced below the substrate 10, the gas discharged from the first housing 41 contacts the back surface of the substrate 10 and reduces its temperature, rather than directly entering the front surface of the substrate 10. This avoids affecting the gas purging operation of the purging mechanism 50 on the front surface of the substrate 10.

[0084] Please see Figures 8 to 10 In one embodiment, the first vent holes 411 are evenly arranged on the surface of the first housing 41 facing the substrate 10, which provides a better cooling effect for various parts of the substrate 10.

[0085] Please see Figures 8 to 10In one embodiment, the first vent holes 411 are arranged in multiple rings with the center of the plate surface of the first housing 41 as the center.

[0086] Of course, the first vent 411 is not limited to being uniformly arranged on the surface of the first housing 41 facing the substrate 10 as described in the above embodiments. It can also be arranged in a non-uniform manner. The specific arrangement can be flexibly adjusted and set according to actual needs.

[0087] In one embodiment, the cooling mechanism 40 is not limited to using air cooling to reduce the temperature of the substrate 10, but may also be in direct or indirect contact with the substrate 10 and transfer the cooling energy to the substrate 10.

[0088] Please see Figures 8 to 10 In one embodiment, the heating mechanism includes a first heating mechanism 61 disposed on the front side of the substrate 10, and / or a second heating mechanism 62 disposed on the back side of the substrate 10. Thus, the first heating mechanism 61 and / or the second heating mechanism 62 can be flexibly selected to heat the substrate 10 according to actual needs.

[0089] Specifically, after water is sprayed onto the substrate 10, the back side of the substrate 10 is heated by the second heating mechanism 62 to raise the temperature of the substrate 10 to a first preset range. Of course, in this step, the front side of the substrate 10 can also be heated separately or simultaneously by the first heating mechanism 61.

[0090] After the desiccant is sprayed onto the substrate 10, the back side of the substrate 10 is also heated by the second heating mechanism 62 to raise the temperature of the substrate 10 to a second preset range. Similarly, in this step, the front side of the substrate 10 can also be heated by the first heating mechanism 61 alone or simultaneously.

[0091] In one embodiment, during the sublimation process, a first heating mechanism 61 is used to heat the front side of the substrate 10, thereby maintaining the temperature of the substrate 10 within a fourth preset range. Compared to heating the back side of the substrate 10, this method achieves better sublimation of the solute and avoids contamination.

[0092] In one embodiment, the specific heating methods of the first heating mechanism 61 and the second heating mechanism 62 on the substrate 10 include, but are not limited to, one or more of the following: light radiation heating, hot air heating, and heat conduction by direct or indirect contact between the heating wire and the substrate 10. The specific selection can be flexibly adjusted and set according to actual needs, and is not limited here.

[0093] Please see Figures 8 to 10In one embodiment, the first heating mechanism 61 includes a second housing 611 spaced apart above the front surface of the substrate 10, and a plurality of first heating lamps 612 spaced apart on the second housing 611 facing the substrate 10. Furthermore, the projection of the second housing 611 onto the substrate 10 along the central axis of the substrate 10 covers a portion of the substrate 10. Specifically, the support mechanism 20 can drive the substrate 10 to rotate. Thus, on the one hand, since the projection of the second housing 611 onto the substrate 10 along the central axis of the substrate 10 covers a portion of the substrate 10, the first heating mechanism 61, the liquid outlet 31 of the desiccant supply mechanism 30, the water outlet 71 of the water supply mechanism 70, and the air outlet 51 of the purging mechanism 50 can be arranged simultaneously in the area above the substrate 10; on the other hand, since the second housing 611 has multiple first heating lamps 612 facing the substrate 10, when the first heating lamps 612 are working, they can heat the part of the substrate 10 corresponding to the second housing 611. At the same time, since the substrate 10 rotates under the drive of the support mechanism 20, the entire surface of the substrate 10 can be heated.

[0094] Specifically, the surface of the second housing 611 facing the substrate 10 is fan-shaped, and the surface of the second housing 611 facing the substrate 10 is coaxially arranged with the substrate 10. Thus, the projection of the second housing 611 onto the substrate 10 along the central axis of the substrate 10 is a fan-shaped area, which can be heated by the first heating mechanism 61. During the rotation of the substrate 10 driven by the support mechanism 20, uniform heating of the entire surface of the substrate 10 can be achieved.

[0095] In one embodiment, the diameter of the sector is, for example, 150mm-180mm, and the maximum arc length of the sector (i.e., the length of the outer edge of the sector) is, for example, 100mm-500mm.

[0096] In one embodiment, the first heating lamps 612 are evenly arranged on the entire surface of the second housing 611 facing the substrate 10, which provides a better heating effect on various parts of the substrate 10.

[0097] Of course, the first heating lamp 612 is not limited to being uniformly arranged on the surface of the second housing 611 facing the substrate 10 as described in the above embodiments. It can also be arranged in a non-uniform manner. The specific arrangement can be flexibly adjusted and set according to actual needs.

[0098] In one embodiment, the substrate processing apparatus further includes a moving mechanism (not shown in the figure). The moving mechanism is disposed inside the process chamber 80 and is connected to the first heating mechanism 61, for driving the first heating mechanism 61 to move on a plane parallel to the surface of the substrate 10. In this way, by driving the first heating mechanism 61 to move on a plane parallel to the surface of the substrate 10, the center and periphery of the substrate 10 can be heated more uniformly, and the heating uniformity of various positions of the substrate 10 is better.

[0099] In one embodiment, the moving mechanism drives the first heating mechanism 61 to move back and forth along the radial direction of the substrate 10 and parallel to the surface of the substrate 10. That is, the first heating mechanism 61 can move both close to the center of the substrate 10 and away from the center of the substrate 10. Of course, the moving mechanism can also move back and forth along a direction that is at an angle to the radial direction of the substrate 10 and parallel to the surface of the substrate 10, which can also achieve the goal of the first heating mechanism 61 moving both close to the center of the substrate 10 and away from the center of the substrate 10, thereby facilitating uniform heating of all positions of the substrate 10.

[0100] In one embodiment, the moving mechanism can also drive the first heating mechanism 61 to move back and forth in a direction perpendicular to the surface of the substrate 10, so as to adjust the distance between the first heating mechanism 61 and the surface of the substrate 10, thereby improving the heating effect accordingly.

[0101] In one embodiment, the moving mechanism only needs to be able to drive the first heating mechanism 61 to move. Specifically, it can be a motor screw moving mechanism, a transmission belt moving mechanism, a transmission chain moving mechanism, a gear and rack moving mechanism, a cylinder moving mechanism, a hydraulic cylinder moving mechanism, etc. The specific mechanism can be flexibly selected and set according to actual needs, and is not limited here.

[0102] Please see Figures 8 to 10 In one embodiment, the evacuation device 92 includes a suction pipe 921. The suction pipe 921 is connected to the second housing 611. The second housing 611 has a plurality of second vent holes 613 on its surface facing the substrate 10. The suction pipe 921 extends through the wall of the process chamber 80 and connects to a vacuum pump or a blower. Thus, the evacuation device 92 and the first heating mechanism 61 are centrally located together. In the sublimation process, after the first heating mechanism 61 heats the substrate 10, the solid solute on the substrate 10 sublimates into gas, which can then enter the interior of the second housing 611 through the second vent holes 613 and be promptly discharged to the outside.

[0103] Of course, as some alternative solutions, the air extraction device 92 is set separately from the first heating mechanism 61. That is, the second vent 613 is not set on the second housing 611 facing the substrate 10, but the second vent 613 is set in other positions to achieve the extraction of gas above the front of the substrate 10.

[0104] In one embodiment, the second vent 613 is evenly arranged on the entire surface of the second housing 611 facing the substrate 10, which provides a better heating effect for various parts of the substrate 10.

[0105] Of course, the second vent 613 is not limited to being uniformly arranged on the surface of the second housing 611 facing the substrate 10 as described in the above embodiments. It can also be arranged in a non-uniform manner. The specific arrangement can be flexibly adjusted and set according to actual needs.

[0106] Please see Figures 8 to 10 In one embodiment, the second heating mechanism 62 includes a plurality of second heating lamps 621 spaced apart on the first housing 41 facing the substrate 10. Thus, since the first housing 41 has a plurality of second heating lamps 621 on its surface facing the substrate 10, the second heating lamps 621 can heat the surface of the substrate 10 when they are in operation. In this way, the second heating mechanism 62 and the first vent 411 are concentrated on the first housing 41, which reduces the product volume.

[0107] Please see Figures 8 to 10 In one embodiment, the second heating lamps 621 are arranged in multiple rings with the center of the first housing 41 plate surface as the center.

[0108] Please see Figures 8 to 10 In one embodiment, the second heating lamps 621 are evenly arranged on the entire surface of the first housing 41 facing the substrate 10, so that the heating effect on various parts of the substrate 10 is better.

[0109] Of course, the second heating lamp 621 is not limited to being uniformly arranged on the surface of the first housing 41 facing the substrate 10 as described in the above embodiments. It can also be arranged in a non-uniform manner. The specific arrangement can be flexibly adjusted and set according to actual needs.

[0110] In one embodiment, the substrate processing apparatus further includes a controller (not shown). The controller is electrically connected to the desiccant supply mechanism 30, cooling mechanism 40, purging mechanism 50, heating mechanism, water supply mechanism 70, vacuum device 91, air extraction device 92, and moving mechanism, respectively. Under the control of the controller, the operation of the desiccant supply mechanism 30, cooling mechanism 40, purging mechanism 50, heating mechanism, water supply mechanism 70, vacuum device 91, air extraction device 92, and moving mechanism can be controlled respectively, resulting in a high degree of automation and reduced labor costs.

[0111] In one embodiment, the substrate processing apparatus further includes a temperature sensor (not shown). The temperature sensor is capable of sensing the temperature of the substrate 10, and the controller is electrically connected to the temperature sensor. Thus, after the temperature sensor senses the temperature of the substrate 10, it feeds back the temperature signal of the substrate 10 to the controller, and the controller controls the cooling mechanism 40 and the heating mechanism to operate accordingly based on the temperature signal sensed by the temperature sensor.

[0112] In summary, this application has at least the following advantages:

[0113] 1. Since the desiccant is a mixture of easily sublimable substances and easily volatile organic solvents, after the desiccant replaces the water in the substrate 10, the desiccant is separated into solid and liquid. The solvent is first evaporated outward, and then the solute is evaporated through sublimation. Thus, the pattern collapse phenomenon caused by the large capillary force in the drying stage of traditional technology does not exist. In addition, since there is no need to use expensive chemical solutions with low surface tension, the cost is lower.

[0114] 2. During the cooling process of substrate 10, purge gas is simultaneously blown onto substrate 10. As the purge gas acts on the front side of substrate 10, it accelerates the solidification of solute at the bottom of deep cavity 11 and causes the solvent to evaporate from inside deep cavity 11 to the outside, thereby reducing process time. Ultimately, all that remains in the pattern gaps of substrate 10 is solid desiccant solute.

[0115] 3. The front side of the substrate 10 is also placed in a vacuum environment, that is, a front vacuum system is introduced. In this way, during the process of solute precipitation and solidification at the bottom of the deep cavity 11, the boiling point of the solvent can be reduced under the action of the vacuum system, and with the action of the purging gas, it can be quickly evaporated.

[0116] 4. During the sublimation process, the vacuum device 92 is activated to promptly remove the preheated sublimation gas, preventing the sublimated solute from cooling and adhering back to the surface of the substrate 10, thus preventing contamination. Furthermore, the vacuum device 92 simultaneously removes vapor from the surface of the substrate 10, accelerating solute sublimation. Specifically, during the sublimation process, only the front side of the substrate 10 is heated, while the back side is not. Compared to heating only the back side, the sublimation effect of the solute inside the deep cavity 11 is better, avoiding contamination. The front side of the substrate 10 is also placed in a vacuum environment, i.e., a vacuum system is introduced onto the front side of the substrate 10. By simultaneously activating the heating device and the vacuum system on the front side of the substrate 10, the synergistic effect of these two devices lowers the sublimation temperature and increases the sublimation rate, thereby reducing process time.

[0117] 5. By driving the first heating mechanism 61 to move on a plane parallel to the surface of the substrate 10 through the moving mechanism, the center and periphery of the substrate 10 can be heated more evenly, and the heating uniformity of each position of the substrate 10 is better.

[0118] 6. The vacuum device 92 and the first heating mechanism 61 are arranged together. In this way, during the sublimation process, after the first heating mechanism 61 heats the substrate 10, the solid solute on the substrate 10 sublimates into gas, which can then enter the interior of the second housing 611 through the second vent 613 and be discharged to the outside in a timely manner.

[0119] 7. Under the control of the controller, the desiccant supply mechanism 30, cooling mechanism 40, purging mechanism 50, heating mechanism, water supply mechanism 70, vacuum device 91, air extraction device 92 and moving mechanism can be controlled to work respectively, with a high degree of automation and reduced labor costs.

[0120] 8. After the temperature sensor detects the temperature of the substrate 10, it feeds back the temperature signal of the substrate 10 to the controller. The controller controls the cooling mechanism 40 and the heating mechanism to work accordingly based on the temperature signal detected by the temperature sensor.

[0121] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

[0123] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0124] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0125] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0126] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0127] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

Claims

1. A substrate processing method, characterized in that, The substrate processing method includes: A desiccant is sprayed onto a substrate to replace the water in the substrate. The desiccant is a mixture of a sublimable substance and a volatile organic solvent. Cooling the substrate causes solid-liquid separation of the desiccant within the deep cavity of the substrate. The solute of the desiccant precipitates and solidifies at the bottom of the deep cavity of the substrate due to the decrease in temperature, while the solvent of the desiccant is located above the solute of the desiccant. In the step of cooling the substrate, the temperature of the substrate is controlled within a third preset range, which is less than the crystallization temperature of the solute of the desiccant. The third preset range is selected as -25℃ to 25℃. A purge gas is provided and blown toward the substrate, causing the solvent of the desiccant to evaporate from the inside of the deep cavity to the outside; Sublimation treatment: After the solvent inside the deep cavity has completely evaporated, the substrate is heated to a temperature higher than the sublimation point of the solute, causing the solute to sublimate and be discharged.

2. The substrate processing method according to claim 1, characterized in that, The step prior to the step of spraying the desiccant onto the substrate includes a step of spraying water onto the substrate, replacing the chemical solution in the substrate with water.

3. The substrate processing method according to claim 2, characterized in that, After the step of replacing the chemical solution in the substrate with water, the method further includes: heating the substrate to maintain the temperature of the substrate within a first preset range, the first preset range being greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

4. The substrate processing method according to claim 1, characterized in that, The saturation of the desiccant is controlled at a set value.

5. The substrate processing method according to claim 1, characterized in that, The step of spraying the desiccant onto the substrate further includes: heating the substrate to maintain the temperature of the substrate within a second preset range, the second preset range being greater than the crystallization temperature of the solute in the desiccant and less than the boiling point temperature of the organic solvent in the desiccant.

6. The substrate processing method according to claim 1, characterized in that, The step of providing purge gas further includes placing the front side of the substrate in a vacuum environment.

7. The substrate processing method according to claim 1, characterized in that, In the sublimation process, the substrate is heated to maintain its temperature within a fourth preset range, which is greater than or equal to the sublimation point of the solute.

8. The substrate processing method according to claim 1, characterized in that, The sublimation process further includes: turning on the vacuum device to remove the sublimated gas.

9. The substrate processing method according to claim 1, characterized in that, In the sublimation process, the front side of the substrate is heated.

10. The substrate processing method according to any one of claims 1 to 9, characterized in that, The sublimation process further includes placing the front side of the substrate in a vacuum environment.

11. A substrate processing apparatus, characterized in that, The substrate processing apparatus includes: Support mechanism, the support mechanism being used to support the substrate; A desiccant supply mechanism is used to spray a desiccant onto the substrate to replace the water in the substrate. The desiccant is a mixture comprising a sublimable substance and a volatile organic solvent. A cooling mechanism is used to reduce the temperature of the substrate, causing solid-liquid separation of the desiccant in the deep cavity of the substrate. The solute of the desiccant will precipitate and solidify at the bottom of the deep cavity of the substrate due to the temperature reduction, and the solvent of the desiccant is located above the solute of the desiccant. The cooling mechanism is used to control the temperature of the substrate within a third preset range, which is less than the crystallization temperature of the solute of the desiccant. The third preset range is selected as -25℃ to 25℃. A purging mechanism is provided to provide purging gas to the substrate, so that the solvent of the desiccant evaporates from the inside of the deep cavity to the outside; A heating mechanism is used to heat the substrate so that the solute inside the deep cavity sublimates and is discharged outward.

12. The substrate processing apparatus according to claim 11, characterized in that, The substrate processing apparatus further includes a water supply mechanism; the water supply mechanism is used to spray water onto the substrate to replace the chemical solution in the substrate.

13. The substrate processing apparatus according to claim 11, characterized in that, The substrate processing apparatus further includes a process chamber; the support mechanism is disposed inside the process chamber; the liquid outlet of the desiccant supply mechanism is located inside the process chamber and is disposed above the front surface of the substrate; the air outlet of the purging mechanism is located inside the process chamber and is disposed above the front surface of the substrate.

14. The substrate processing apparatus according to claim 13, characterized in that, The substrate processing apparatus further includes a vacuum pumping device; the vacuum pumping device is used to evacuate the process chamber to provide a vacuum environment for the front side of the substrate.

15. The substrate processing apparatus according to claim 11, characterized in that, The substrate processing apparatus further includes a gas extraction device; the gas extraction device is used to remove the evaporated solvent; the gas extraction device is also used to remove the gas generated by the sublimation of the solute.

16. The substrate processing apparatus according to claim 11, characterized in that, The cooling mechanism includes a first housing disposed at intervals below the substrate, and a cold air supply mechanism connected to the first housing; the first housing is provided with a plurality of first vent holes disposed opposite to the back side of the substrate.

17. The substrate processing apparatus according to claim 11, characterized in that, The heating mechanism includes a first heating mechanism disposed on the front side of the substrate, and / or a second heating mechanism disposed on the back side of the substrate.

18. The substrate processing apparatus according to claim 17, characterized in that, The first heating mechanism includes a second housing spaced apart above the front surface of the substrate, and a plurality of first heating lamps spaced apart on the second housing facing the substrate surface; the projection of the second housing onto the substrate along the central axis of the substrate covers a portion of the substrate; the support mechanism can drive the substrate to rotate.

19. The substrate processing apparatus according to claim 18, characterized in that, The substrate processing apparatus further includes a moving mechanism connected to the first heating mechanism, which drives the first heating mechanism to move on a plane parallel to the substrate surface.

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