Probe card

Abstract

The present invention aims to easily recognize an alignment mark formed on a probe by suppressing reflected light from a wiring substrate in which an insulating film is formed on an interlayer wiring. A wiring substrate (103) in which an insulating film (304) and an electrode pad (3) are formed, and a probe (5) mounted on the electrode pad (3) are provided. The probe (5) has an alignment mark (7) that can be recognized from the side opposite the wiring substrate (103). The alignment mark (7) is located on the wiring substrate (103) at a position further outside than the electrode pad (3). The insulating film (304) is a light-transmissive thin film that covers an interlayer wiring (314). A reflection-preventing film (6) having a lower light transmittance than the insulating film (304) is formed on a part of the area of the insulating film (304). The reflection-preventing film (6) is formed on an area including a position corresponding to the alignment mark (7) and the periphery thereof.

Description

Technical Field

[0001] This invention relates to probe cards, and more specifically, to improvements in probe cards that form alignment marks on probes. Background Technology

[0002] A probe card is an inspection device used to inspect the electrical characteristics of semiconductor devices formed on a semiconductor wafer. Multiple probes that contact the electrode terminals on the semiconductor wafer are disposed on a wiring substrate.

[0003] The inspection of semiconductor equipment is performed as follows: The semiconductor wafer is brought close to the probe card, and the tip of the probe contacts the electrode terminals on the semiconductor wafer. The test device is then connected to the semiconductor equipment via the probe and the wiring board. Before inspection, the probe card and the semiconductor wafer are aligned to ensure that the tip of the probe contacts the corresponding electrode terminals.

[0004] Alignment is performed by identifying alignment marks set on the probe card. For example, one or more alignment marks set on the wiring board or the probe are photographed, the alignment marks are extracted from the photographic image, and their positions are determined, thereby determining the position and orientation of the probe card (e.g., Patent Documents 1-4).

[0005] Prior art literature

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2011-27538

[0008] Patent Document 2: Japanese Patent Publication No. 2005-533263

[0009] Patent Document 3: Japanese Patent Application Publication No. 2010-182749

[0010] Patent Document 4: Japanese Patent Application Publication No. 2004-138393 Summary of the Invention

[0011] -The problem the invention aims to solve-

[0012] An insulating film is formed on the probe setting surface of the wiring substrate to cover interlayer wiring. If a photosensitive polymer is used in this insulating film, the insulating film can be patterned by exposure and development without forming a photoresist on the insulating film, which simplifies the manufacturing process.

[0013] However, photosensitive polymers need to be light-transmitting materials. Therefore, when using photosensitive polymers in the insulating film, the reflected light from the wiring substrate increases when photographing alignment marks, making it difficult to identify the alignment marks. For example, there are problems such as: illumination light transmitted through the insulating film undergoes positive reflection at the interlayer wiring, becoming strongly reflected light; furthermore, diffuse reflection at the edges of the interlayer wiring becomes stray light within the insulating film, making the entire insulating film brighter due to diffuse reflection.

[0014] In particular, when an alignment mark is formed on the probe, the insulating film that serves as the background of the alignment mark reflects the illumination light and becomes brighter, which reduces the contrast of the alignment mark and makes it difficult to identify.

[0015] The present invention was made in view of the above circumstances, and its object is to enable easy identification of alignment marks formed on probes. In particular, its object is to enable easy identification of alignment marks formed on probes by suppressing reflected light from a wiring substrate on which a light-transmitting insulating film is formed on interlayer wiring. Furthermore, its object is to simplify the manufacturing method of probe cards.

[0016] -Methods for solving problems-

[0017] A probe card based on a first embodiment of the present invention comprises: a wiring substrate having an insulating film and electrode pads formed thereon; and a probe mounted on the electrode pads, the probe having an alignment mark identifiable from the side opposite to the wiring substrate, the alignment mark being located on the wiring substrate at a position further outward than the electrode pads, the insulating film being a light-transmitting thin film covering interlayer wiring, and a reflection-preventing film having a lower light transmittance than the insulating film being formed in a portion of the insulating film, the reflection-preventing film being formed in a region including the position corresponding to the alignment mark and its periphery.

[0018] With this structure, when photographing the alignment mark under illumination, reflected light from the insulating film can be suppressed. Therefore, it is possible to prevent the alignment mark from being difficult to identify due to reflected light from the interlayer wiring covered by the insulating film or stray light within the insulating film.

[0019] Based on the second embodiment of the present invention, the probe card has the anti-reflection film configured to be light-nontransmissive in addition to the structure described above. This structure effectively prevents difficulty in identifying alignment marks.

[0020] Based on the third embodiment of the present invention, the probe card has the above-described structure, wherein the insulating film comprises a photosensitive polymer, and the probe is patterned by exposure and development processes. This structure simplifies the formation process of the insulating layer compared to patterning using photolithography with photosensitive photoresist.

[0021] Based on the probe card of the fourth embodiment of the present invention, the anti-reflection film is formed by selective coating using a micro-nozzle, according to the above structure. This structure simplifies the anti-reflection film formation process compared to patterning using photolithography with a photosensitive photoresist.

[0022] Based on the fifth embodiment of the present invention, the probe card has the anti-reflection film configured to have a lower reflectivity than the insulating film, in addition to the structure described above. This structure facilitates the identification of alignment marks.

[0023] Based on the sixth embodiment of the present invention, the probe card has the anti-reflection film formed so as not to overlap with the electrode pads, in addition to the structure described above. This structure prevents probe conduction problems caused by the miniaturization of the electrode pads.

[0024] Based on the probe card of the seventh embodiment of the present invention, a plurality of probes are arranged in a given direction to form a probe group, and the anti-reflection film is formed in an elongated shape extending along the probe group, in a region including positions corresponding to the alignment marks of the plurality of probes belonging to the probe group and their surrounding areas. This structure facilitates the identification of the alignment marks of each probe belonging to the probe group. Furthermore, it facilitates the formation of the anti-reflection film.

[0025] Based on the probe card of the eighth embodiment of the present invention, two probe groups are arranged parallel to each other in the above-described structure, and the anti-reflection film is formed between the two probe groups, in a region including the position corresponding to the alignment marks of the plurality of probes belonging to the two probe groups respectively and the area surrounding thereon. With this structure, the identification of the alignment marks of each probe belonging to the two probe groups can be facilitated. Furthermore, the formation of the anti-reflection film can be facilitated.

[0026] Based on the ninth embodiment of the present invention, the probe card is configured such that the distance from both ends of the anti-reflection film along its long side to the position corresponding to the nearest alignment mark is longer than the distance from both ends of the anti-reflection film along its short side to the position corresponding to the alignment mark. This structure further facilitates the identification of the alignment marks of each probe belonging to the probe group.

[0027] -Invention Effects-

[0028] According to the present invention, alignment marks formed on the probe can be easily identified. In particular, by suppressing reflected light from the wiring substrate from the light-transmitting insulating film formed on the interlayer wiring, alignment marks formed on the probe can be easily identified. Furthermore, the manufacturing method of the probe card can be simplified. Attached Figure Description

[0029] Figure 1 This is a diagram illustrating an example of the overall outline structure of a system including the probe card 10 based on Embodiment 1 of the present invention.

[0030] Figure 2 It is a diagram showing what it looks like when aligned.

[0031] Figure 3 This is a three-dimensional view of the probe mounting surface 13 viewed from below.

[0032] Figure 4 Is Figure 3 A sectional view of the section cut by the AA cutting line (AA section view).

[0033] Figure 5 This is a diagram illustrating an example of the formation process of insulating films 303 and 304 in chronological order.

[0034] Figure 6 This is a diagram illustrating an example of the formation process of the anti-reflection film 6 in a time sequence.

[0035] Figure 7 This is a diagram showing the appearance of probe mounting surface 13 from above.

[0036] Figure 8 This is a diagram showing a comparative example to be compared with the present invention.

[0037] Figure 9 It means Figure 7 Region R1 Figure 8 An example of a photographic image of region R2.

[0038] Figure 10 This is a diagram illustrating other structural examples of the probe card 10 based on Embodiment 1 of the present invention.

[0039] Figure 11 This is a diagram showing an example of the main parts of the probe card 10 based on Embodiment 2 of the present invention, and is a perspective view of the probe setting surface 13 viewed from below.

[0040] Figure 12 This is a diagram showing the appearance of probe mounting surface 13 from above.

[0041] Figure 13 This is a diagram showing an example of the main parts of the probe card 10 based on embodiment 3, and is a perspective view of the probe mounting surface 13 viewed from below.

[0042] Figure 14 This is a diagram showing the appearance of probe mounting surface 13 from above.

[0043] Figure 15 This is a diagram showing another example of the main parts of the probe card 10 based on embodiment 3, and is a perspective view of the probe mounting surface 13 viewed from below.

[0044] Figure 16 This is a diagram showing the appearance of probe mounting surface 13 from above. Detailed Implementation

[0045] Implementation method 1.

[0046] [A] System Overview

[0047] Figure 1 This diagram illustrates an example of the overall schematic structure of a system including the probe card 10 based on Embodiment 1 of the present invention, showing a cross-section of the probe card 10 disposed on the wafer detector when cut vertically. The probe card 10 is mounted on the wafer detector with the probe mounting surface 13, on which the probe 5 is mounted, facing downwards. The probe mounting surface 13 is opposite to the semiconductor wafer 20 on the stage 200, and by moving the stage 200 up and down, the probe 5 can be brought into contact with the electrode terminal 21 on the semiconductor wafer 20.

[0048] (1) Probe card 10

[0049] The probe card 10 consists of a main substrate 100, a reinforcing plate 101, an interpolator 102, an ST (Space transformer) substrate 103, and two or more probes 5.

[0050] The main substrate 100 is a wiring substrate detachably mounted on the wafer detector, such as a disc-shaped glass epoxy board. The outer periphery of the lower surface of the main substrate 100 is supported by the wafer detector's retainer 201 and is arranged substantially horizontally. Two or more external terminals 11 for connecting signal terminals of a test device (not shown) are provided on the outer periphery of the upper surface of the main substrate 100.

[0051] The reinforcing plate 101 is a component used to suppress deformation of the main substrate 100, and is made of stainless steel, for example. The reinforcing plate 101 is mounted on the center of the upper surface of the main substrate 100.

[0052] The interposer 102 is a connection unit between the main substrate 100 and the ST substrate 103. The interposer 102 is disposed on the lower surface side of the main substrate 100 and has multiple spring pins that conduct the wiring of the main substrate 100 and the wiring of the ST substrate 103.

[0053] ST substrate 103 is a wiring substrate for changing electrode spacing, and wiring is formed on probe mounting surface 13 at a smaller spacing than that of main substrate 100. ST substrate 103 is an insulating multilayer wiring substrate, for example, a laminate formed by bonding two or more ceramic plates can be used. ST substrate 103 is disposed on the lower surface side of main substrate 100 via interposer 102. Furthermore, ST substrate 103 is supported by main substrate 100 via substrate holder 12 and is disposed substantially horizontally.

[0054] The probe mounting surface 13 is the lower surface of the ST substrate 103, and two or more electrode pads 3 are formed thereon. The electrode pads 3 are electrodes on which probes 5 are mounted, and are configured to correspond to the electrode terminals 21 on the semiconductor wafer 20.

[0055] (2) Platform 200

[0056] The stage 200 is a mounting platform for the semiconductor wafer 20. The semiconductor wafer 20, which is the object to be inspected, is placed on the stage 200 such that the electrode terminals 21 are on the upper surface side. The stage 200 is capable of horizontal movement, rotation, and vertical movement. In addition, a camera 22 for alignment and a lighting device 23 are mounted on the stage 200.

[0057] Camera 22 is an imaging unit used to capture alignment marks (not shown) formed on probe 5, and can be, for example, a CCD or CMOS image sensor. Camera 22 is configured such that its light-receiving axis 24 is substantially perpendicular to probe setting surface 13.

[0058] The illumination device 23 is an illumination unit that supplies illumination light for camera photography; for example, an LED or laser diode can be used. The illumination device 23 is positioned near the camera 22, facing approximately the same direction as the camera 22, and illuminates the alignment mark that becomes the subject of the camera 22. The projection axis of the illumination device 23 is preferably approximately coaxial with the light receiving axis 24 of the camera 22.

[0059] (3) Alignment

[0060] Figure 2 It is a diagram showing what it looks like when aligned, and Figure 1Similarly, this is a cross-sectional view showing the cross-section of the probe card 10 installed on the wafer detector when cut vertically. During inspection, the tip of the probe 5 is brought into contact with the corresponding electrode terminal 21, so the probe card 10 and the semiconductor wafer 20 are aligned before inspection. Alignment is performed by identifying alignment marks and determining the position and orientation of the probe card 10.

[0061] Alignment mark identification is performed by sequentially photographing the probe mounting surface 13 with the camera 22 while the stage 200 is moved or rotated in the horizontal plane, and the alignment marks are extracted from the obtained photographic images. By identifying one or more alignment marks, the position and orientation of the probe card 10 within the wafer detector can be determined. Given that the positions of the electrode terminals 21 on the stage 200 are known, the stage 200 is moved or rotated based on the determined position and orientation of the probe card 10, thereby aligning the tip of the probe 5 with the corresponding electrode terminal 21. Subsequently, if the stage 200 is raised, the probe 5 can be brought into contact with the corresponding electrode terminal 21 for inspection.

[0062] Figure 3 as well as Figure 4 This is a diagram showing what it looks like when focusing on a probe 5 for alignment. Figure 3 This is a three-dimensional view of the probe mounting surface 13 viewed from below. Figure 4 Therefore Figure 3 A sectional view of the section cut by the AA cutting line (AA section view). Additionally, Figure 3 as well as Figure 4 All of them are Figure 1 The diagram is represented by the top and bottom reversed.

[0063] (4) Probe 5

[0064] The probe 5 includes a contact portion 50, a beam portion 51, and a base portion 52. The contact portion 50 is the front end of the probe 5 that contacts the electrode terminal 21 of the object being inspected, and is provided at one end of the beam portion 51. The base portion 52 is a support portion having a mating surface that engages with the electrode pad 3, and is provided at the other end of the beam portion 51. The beam portion 51 is a connecting portion that connects the contact portion 50 and the base portion 52, and has an elongated shape extending along the ST substrate 103.

[0065] The probe 5 employs a cantilever beam structure, where the beam 51 elastically deforms under the load received from the electrode terminal 21 via the contact portion 50, achieving overdrive. Furthermore, with the base portion 52 mounted on the electrode pad 3, the contact portion 50 is located outside the electrode pad 3.

[0066] The contact portion 50 is formed in a shape that protrudes toward the semiconductor wafer 20. The cross-sectional shape near the front end of the contact portion 50 is a trapezoid that narrows toward the front end, and a contact surface 500 and conical surfaces 501 and 502 are formed along its periphery. The contact surface 500 is a rectangular plane that contacts the electrode terminal 21 and is arranged substantially parallel to the probe mounting surface 13. The conical surfaces 501 and 502 are both rectangular planes adjacent to the contact surface 500 and are arranged at an angle relative to the probe mounting surface 13. Furthermore, the conical surfaces 501 and 502 are arranged to be spaced apart from the contact surface 500 along the long side of the beam portion 51.

[0067] The contact surface 500 and the conical surfaces 501 and 502 are formed as smooth surfaces to reflect the illumination light orally. Therefore, illumination light emanating from a direction that is approximately perpendicular to the probe setting surface 13 is reflected at the contact surface 500 in a direction that is approximately the same as the incident direction, but at the conical surfaces 501 and 502 in a direction that is significantly different from the incident direction.

[0068] Therefore, by aligning the light-receiving axis 24 of the camera 22 and the projection axis of the illumination device 23 approximately, and by making them approximately perpendicular to the probe setting surface 13, strong reflected light based on orthographic reflection is incident on the camera 22 from the contact surface 500, while strong reflected light is not incident from the conical surfaces 501 and 502. Thus, in the photographic image, the contact surface 500 becomes a bright area, while the conical surfaces 501 and 502 become dark areas. Edges with contrast differences at the boundaries of the contact surface 500 and the conical surfaces 501 and 502 can be extracted through image processing. In other words, the contact surface 500, separated by the conical surfaces 501 and 502, can be used as an alignment mark 7.

[0069] Furthermore, when the angle between the conical surfaces 501 and 502 and the contact surface 500 is large enough, it is not necessary for the light-receiving axis 24 of the camera 22 to be strictly aligned with the light-projecting axis of the illumination device 23. In addition, it is not necessary for these axes to be strictly perpendicular to the probe setting surface 13.

[0070] (5)ST substrate 103

[0071] ST substrate 103 has one or more insulating films 303 and 304 stacked on a laminate of two or more ceramic substrates 301 and 302. Interlayer wirings 312 to 314 are wirings formed between these layers 301 to 304 and are connected to vias 321 to 324 that pass through each layer 301 to 304. Electrode pads 3 and anti-reflection films 6 are formed on the outermost insulating film 304, and the electrode pads 3 are connected to the interlayer wirings 314 through the vias 324 that pass through the insulating film 304. Interlayer wirings 312 to 314, vias 321 to 324, and electrode pads 3 can be made of metals with good conductivity, such as copper (Cu), gold (Au), or aluminum (Al).

[0072] The insulating films 303 and 304 use photosensitive polymers, such as photosensitive polyimide. The photosensitive polymers patterned through exposure and development require transmissibility to the illumination light used for photosensitive applications. Therefore, the insulating films 303 and 304 use materials that are transmissive in the visible light wavelength range. As a result, the interlayer wiring 313 and 314 embedded within the insulating films 303 and 304 can be visually identified from the outside.

[0073] The anti-reflection film 6 is a light-nontransmissive thin film formed on the insulating film 304, covering the insulating film 304 at the position corresponding to the alignment mark 7 and the surrounding area of ​​that position. For example, a vertical line from the center of the alignment mark 7 is formed as a circular area centered at the position 601 where it intersects the insulating film 304.

[0074] By forming the anti-reflection film 6, reflected light from the insulating film 304 can be blocked during camera photography. Therefore, the background becomes brighter due to reflected light at the interlayer wirings 313 and 314 and stray light within the insulating films 303 and 304, preventing difficulty in identifying the alignment mark 7. Furthermore, instead of a light-transmitting film, a film with lower light transmittance in the visible light area than the insulating film 304 can be used as the anti-reflection film 6.

[0075] Furthermore, the anti-reflection film 6 is formed as a thin film with sufficiently low light reflectivity. For example, a black resin coating containing carbon can be used. By using such an anti-reflection film 6, reflected light from the insulating film 304 can be suppressed, and reflections at the surface of the anti-reflection film 6 can also be suppressed. As a result, in the photographed image of the camera 22, the anti-reflection film 6 can be made darker than the insulating film 304.

[0076] The reflectivity at the surface of the anti-reflection film 6 is preferably lower than that of the insulating film 304. Where the reflectivity of the insulating film 304 is uneven across regions, it is preferably lower than the average reflectivity of the insulating film 304.

[0077] Furthermore, the anti-reflection film 6 is formed so as not to overlap with the electrode pad 3. By forming the anti-reflection film 6 in the area separated from the electrode pad 3, the electrode pad 3 can be made smaller, preventing poor contact between the probe 5 and the electrode pad 3.

[0078] (6) Manufacturing method

[0079] Figure 5 (a) to (d) are diagrams showing an example of the formation process of insulating films 303 and 304 in a time sequence. (a) is a diagram showing the ST substrate 103 before the formation of insulating films 303 and 304.

[0080] (b) is a diagram showing the state in which the coating 800 is formed entirely on the upper surface of the ST substrate 103. The coating 800 is formed by applying or transferring a photosensitive polymer onto the ST substrate 103 and then pre-baking it. For example, the photosensitive polymer is spin-coated to form the coating 800 entirely on the upper surface of the ST substrate 103. Afterward, a pre-baking process is performed to evaporate the solvent by heating, thereby fixing the coating 800 onto the ST substrate 103.

[0081] (c) is a diagram showing the state during exposure. The pre-baked coating 800 is selectively exposed using a patterned mask or a direct drawing device to perform photocrosslinking of the photosensitive polymer. The coating 800 is divided into an exposed region 801 irradiated by a photosensitive illumination light 805 and a non-exposed region 802 not irradiated by the photosensitive illumination light 805; photocrosslinking occurs only in the exposed region 801. Afterward, post-exposure baking is performed to perform thermal crosslinking.

[0082] (d) is a diagram showing the appearance after development. The exposed and baked coating 800 is developed using a developer, which selectively dissolves and removes the coating 800. If the photosensitive polymer is negative, the unexposed area 802 is dissolved and removed. Afterwards, curing is performed to solidify the coating 800, thereby forming insulating films 303 and 304.

[0083] In this way, by forming insulating films 303 and 304 from photosensitive materials, the insulating films 303 and 304 can be patterned by selective exposure and development without forming photoresist on them. Therefore, the process of applying and stripping photoresist is eliminated, simplifying the manufacturing process.

[0084] The photosensitive illumination light 805 needs to reach not only the surface of the coating 800 but also its interior, requiring the photosensitive material used in the coating 800 to be transmissive to the photosensitive illumination light 805. Therefore, photosensitive materials that are transmissive in the visible light wavelength region are used in the insulating films 303 and 304.

[0085] Figure 6 Figures (a) to (e) show an example of the formation process of the anti-reflection film 6 in time sequence. Figures (a) and (b) show the application of resin coating 810 using a micro-nozzle 815. Figure (a) shows the initial application, and figure (b) shows the application process. Resin coating 810 is ejected from the tip of the micro-nozzle 815. While moving the micro-nozzle 815 along the upper surface of the ST substrate 103, resin coating 810 is ejected, thereby forming a resin film 811 in the formation area of ​​the anti-reflection film 6.

[0086] (c) is a diagram showing the state at the end of coating. At the end of coating, the spraying of resin coating 810 is stopped, and the micro nozzle 815 is moved away from the ST substrate 103. At this time, an angled protrusion 812 extending from the coating end position toward the micro nozzle 815 is formed on the resin film 811.

[0087] Figures (d) and (e) show the appearance after removing the protrusion 812. After coating is completed, the micro-nozzle 815 moves along the ST substrate 103 in the opposite direction to the direction of travel before the end of coating, and then moves to approach the resin film 811 (see (d)). Then, without spraying the resin coating 810, the micro-nozzle 815 moves in the same direction as the direction of travel before the end of coating and passes the coating end position, moving to a position that is not opposite to the resin film 811. At this time, the resin coating 810 constituting the protrusion 812 adheres to the tip of the micro-nozzle 815, and the resin film 811 with the protrusion 812 removed becomes the anti-reflection film 6 (see (e)). Afterwards, the micro-nozzle 815 is cleaned to remove the resin coating 810 adhering to the tip.

[0088] By employing this method, the anti-reflection film 6 can be formed without patterning based on exposure and development. The pattern of the anti-reflection film 6 does not require the high precision of interlayer wirings 312-314 and vias 321-324, so it can be formed by applying resin coating 810 using a nozzle.

[0089] Furthermore, by removing the protrusion 812 formed by applying the coating through a micro-nozzle, the maximum height of the anti-reflection film 6 can be suppressed, preventing the protrusion 812 from contacting the probe 5 or the electrode terminal 21 of the object being inspected.

[0090] [B] Effects

[0091] Figure 7 This diagram shows the appearance of the probe mounting surface 13 from above, equivalent to a photographic image taken by camera 22. Because an anti-reflection film 6 is formed in the background surrounding the alignment mark 7, there is no bright area around the alignment mark 7, making the alignment mark 7 easily identifiable.

[0092] The anti-reflection film 6 is formed to cover the insulating film 304 in the area including the position corresponding to the alignment mark 7. For example, the anti-reflection film 6 is formed in a circular area centered on the position corresponding to the alignment mark 7.

[0093] Because insulating films 303 and 304 are transmissive, when illuminated, strong total internal reflection occurs on the main surfaces of interlayer wirings 313 and 314. Furthermore, diffuse reflection from interlayer wirings 313 and 314 and the edges of electrode pads 3 becomes stray light within insulating films 303 and 304, making the entire insulating film 303 and 304 bright. Therefore, except for the area forming the anti-reflection film 6, the observed area is bright.

[0094] In contrast, in the area where the anti-reflection film 6 is formed, reflected light from the insulating film 304 is cut off, and the light reflectivity of the surface of the anti-reflection film 6 is also low, resulting in a sufficiently dark area. Therefore, in the background adjacent to the alignment mark 7, there is no bright area that could be easily confused with the alignment mark 7, and since the contrast of the alignment mark 7 is not reduced, the alignment mark 7 can be easily identified.

[0095] Furthermore, in the short side direction of the beam 51, the width W1 of the anti-reflection film 6 can be made sufficiently larger than the width W2 of the probe 5. The shape of the probe 5 is constrained by various conditions such as elastic properties, electrical properties, and arrangement spacing, making it difficult to significantly increase the width W2 of the probe 5. Therefore, compared to the case where an area for anti-reflection is provided on the probe 5, the recognizability of the alignment mark 7 can be improved more effectively.

[0096] Figure 8 This diagram illustrates a comparative example to be compared with the present invention. If... Figure 8 and Figure 7 In comparison, the difference lies in the absence of the anti-reflective film 6. Without the anti-reflective film 6, the background surrounding the alignment mark 7 becomes a bright area, making the identification of the alignment mark 7 difficult.

[0097] Figure 9 This is a diagram showing an example of a photographed image from camera 22. Figure (a) shows an image with... Figure 7 The photographic image corresponding to region R1, shown in figure (b) is the same as... Figure 8 The photographic image corresponding to region R2. Compare. Figure 9 As can be seen from (a) and (b), the identification of alignment mark 7 is facilitated by the present invention.

[0098] [C] Other structural examples

[0099] Figure 10 This is a diagram illustrating other structural examples of the probe card 10 based on Embodiment 1 of the present invention, and... Figure 4 Similarly, it means to Figure 3 A sectional view of the section cut by the AA cutting line (AA section view).

[0100] exist Figure 4 In the middle, electrode pads 3 are formed on the outermost insulating film 304, and in contrast, in Figure 9 In the middle, it is formed on the insulating film 303 which is lower than the insulating film 304, and is exposed through the through hole 340 of the insulating film 304.

[0101] One or more insulating films 303 and 304 are formed on the probe setting surface 13 of the ST substrate 103, and the electrode pads 3 are exposed. In other words, the present invention is not limited to the case where the electrode pads 3 are formed only on the outermost insulating film 304.

[0102] Furthermore, in this embodiment, an example has been described in which the front end of the contact portion 50 of the probe 5 is used as the alignment mark 7, but the present invention is not limited to this case. For example, the alignment mark 7 can also be formed on the beam portion 51 near the contact portion 50, and the present invention can also be applied to such a probe card 10.

[0103] Implementation method 2.

[0104] In Embodiment 1, an example was described where an anti-reflection film 6 was formed corresponding to the probe 5. In contrast, in this embodiment, an anti-reflection film 6 is formed corresponding to a probe group 530 consisting of two or more probes 5.

[0105] Figure 11 as well as Figure 12 This is a diagram showing an example of the main parts of the probe card 10 based on Embodiment 2 of the present invention, focusing on a probe group 530 and showing its alignment. Figure 11 This is a three-dimensional view of the probe mounting surface 13 viewed from below. Figure 12 This is a diagram showing what the probe mounting surface 13 looks like from above, equivalent to a photographic image taken by camera 22.

[0106] The probe group 530 consists of two or more probes 5 corresponding to two or more electrode terminals 21 arranged on the same straight line. Each probe 5 is arranged parallel to each other with a fixed interval and is arranged in a direction intersecting the long side direction of the beam 51. Therefore, the alignment marks 7 of each probe 5 are also arranged on the same straight line.

[0107] The electrode pad group 330 consists of two or more electrode pads 3 on which probes 5 belonging to the probe group 530 are mounted. In other words, the electrode pads 3 belonging to the electrode pad group 330 are arranged at fixed intervals in the same direction as the arrangement direction of the probe group 530.

[0108] An anti-reflection film 6 is formed corresponding to the probe group 530. The anti-reflection film 6 comprises an elongated rectangle extending along the arrangement direction of the probe group 530, and within the forming area of ​​the anti-reflection film 6, includes positions 601 corresponding to the alignment marks 7 of each probe 5 belonging to the probe group 530. In other words, the anti-reflection film 6 is formed such that it covers the corresponding positions 601 and their periphery on the probe setting surface 13 with respect to all the alignment marks 7 belonging to the probe group 530.

[0109] Therefore, for any alignment mark 7, an anti-reflection film 6 is also formed in the background surrounding the alignment mark 7, and there is no bright area around the alignment mark 7, making it easy to identify all alignment marks 7.

[0110] Furthermore, by establishing a corresponding anti-reflection film 6 with two or more probes 5, compared to the case where the anti-reflection film 6 is formed according to each alignment mark 7, the number of times the resin coating is applied can be reduced, and the number of cleaning processes of the micro-nozzle 815 after the coating is completed can be reduced.

[0111] Furthermore, the anti-reflection film 6 is formed so as not to overlap with the electrode pads 3, preventing the electrode pads 3 from becoming too narrow. The width of the anti-reflection film 6 in the short side direction is limited by the electrode pads 3. In contrast, there is no such limitation in the length of the anti-reflection film 6 in the long side direction, so the anti-reflection film 6 is formed such that the two ends 620, 621 in the long side direction extend to a position further outward than the electrode pad group 330. Therefore, regarding the long side direction of the anti-reflection film 6, compared with the short side direction, it is possible to prevent the identification of the alignment mark 7 from becoming difficult due to the background far from the alignment mark 7.

[0112] In the figure, distance S1 is the distance from the position 601 corresponding to the alignment mark 7 to the end 610 of the anti-reflection film 6 in the short side direction, which is shorter than the distance to the electrode pad 3. In addition, distances L1 and L2 in the figure are the distances from the ends 620 and 621 of the anti-reflection film 6 in the long side direction to the position 601 corresponding to the nearest alignment mark 7, which are both longer than the distance S1 from the end 610 in the short side direction.

[0113] Implementation method 3.

[0114] In Embodiment 2, an example was described where an anti-reflection film 6 was formed corresponding to one probe group 530. In contrast, in this embodiment, a case was described where an anti-reflection film 6 was formed corresponding to two adjacent probe groups 531 and 532.

[0115] Figure 13 as well as Figure 14 This is a diagram showing an example of the main parts of the probe card 10 based on embodiment 3, focusing on the two probe groups 531, 532 and showing how they are aligned. Figure 13 This is a three-dimensional view of the probe mounting surface 13 viewed from below. Figure 14 This is a diagram showing what the probe mounting surface 13 looks like from above, equivalent to a photographic image taken by camera 22.

[0116] Probe groups 531 and 532 each have the same structure as probe group 530 (Embodiment 2). That is, they are composed of two or more probes 5 corresponding to two or more electrode terminals 21 arranged on the same straight line. The two probe groups 531 and 532 are arranged to be adjacent to each other in parallel, and the contact portions 50 belonging to different probe groups 531 and 532 are arranged to be opposite each other.

[0117] Electrode pad groups 331 and 332 have the same structure as electrode pad group 330 (Embodiment 2). Furthermore, electrode pad groups 331 and 332 correspond to probe groups 531 and 532, respectively.

[0118] An anti-reflection film 6 is formed corresponding to two probe groups 531, 532 and disposed between two electrode pad groups 331, 332. The formation area of ​​the anti-reflection film 6 includes an elongated rectangle extending along the arrangement direction of the probe groups 531, 532, including a position 601 corresponding to the alignment mark 7 of each probe 5 belonging to the two probe groups 531, 532. In other words, the anti-reflection film 6 is formed such that the alignment mark 7 belonging to the two probe groups 531, 532 covers the corresponding position 601 and its periphery on the probe setting surface 13.

[0119] Therefore, for any alignment mark 7, an anti-reflection film 6 is also formed in the background surrounding the alignment mark 7, and there is no bright area around the alignment mark 7, making it easy to identify all alignment marks 7.

[0120] Furthermore, by establishing a corresponding anti-reflection film 6 with the two probe groups 531 and 532, compared to the case where the anti-reflection film 6 is formed for each probe group 531 and 532, the number of times the resin coating is applied can be reduced, and the number of cleaning processes of the micro-nozzle 815 after the coating is completed can be reduced.

[0121] Furthermore, the anti-reflection film 6 is formed so as not to overlap with the electrode pads 3, preventing the electrode pads 3 from becoming too narrow. Additionally, the anti-reflection film 6 is formed such that its two ends 620, 621 in the long side direction extend to positions further outward than the electrode pad groups 331, 332. Therefore, regarding the long side direction of the anti-reflection film 6, compared to the short side direction, it is possible to prevent the identification of the alignment mark 7 from becoming difficult due to a background far from the alignment mark 7.

[0122] In the figure, distances S1 and S2 are the distances from the position 601 corresponding to the alignment mark 7 to the short-side ends 610 and 611 of the anti-reflection film 6, which are shorter than the distance to the electrode pad 3. Furthermore, distances L1 and L2 in the figure are the distances from the long-side ends 620 and 621 of the anti-reflection film 6 to the position 601 corresponding to the nearest alignment mark 7, which are both longer than the distances S1 and S2 from the short-side ends 610 and 611.

[0123] Figure 15 as well as Figure 16 This is a diagram showing another example of the main part of the probe card 10 based on embodiment 3, focusing on the two probe groups 531, 532 and showing how they are aligned. Figure 15 This is a three-dimensional view of the probe mounting surface 13 viewed from below. Figure 16 This is a diagram showing what the probe mounting surface 13 looks like from above, equivalent to a photographic image taken by camera 22.

[0124] Probes 5 belonging to different probe groups 531 and 532 are arranged alternately, and the contact portions 50 of each probe 5 belonging to the two probe groups 531 and 532 are arranged on the same straight line. This other structure is similar to... Figure 13 as well as Figure 14 The situation is exactly the same. This invention can also be applied to such a probe card 10.

[0125] -Symbol Explanation-

[0126] 3 electrode pads

[0127] 5 probes

[0128] 6. Anti-reflective film

[0129] 7 Alignment Marks

[0130] 10 probe cards

[0131] 11 External terminals

[0132] 12. Substrate holder

[0133] 13 Probe Setting Surface

[0134] 20 Semiconductor wafers

[0135] 21 Electrode terminals

[0136] 22 cameras

[0137] 23 lighting fixtures

[0138] 24 Light receiving axis

[0139] 50 Contact Department

[0140] 51. Beam section

[0141] 52. Base section

[0142] 100 main base board

[0143] 101 Reinforced Plate

[0144] 102 Intercalator

[0145] 103 ST substrate

[0146] 200 platforms

[0147] 201 Locking Holder

[0148] 301 and 302 ceramic substrates

[0149] 303 and 304 insulating films

[0150] Inter-layer wiring (312-314)

[0151] Vias 321-324

[0152] 330-332 Electrode Pad Group

[0153] 340 through hole

[0154] 500 contact surface

[0155] 501, 502 Conical surfaces

[0156] Probe group 530-532

[0157] The corresponding position on the 601 anti-reflection film

[0158] Ends of anti-reflective films 610, 611, 620, and 621

[0159] 800 coating

[0160] 801 Exposure Area

[0161] 802 Unexposed Area

[0162] 805 Photosensitive Illuminating Light

[0163] 810 Resin Coating

[0164] 811 Resin Film

[0165] 812 Protrusion

[0166] 815 Micro Nozzle

[0167] Distance along the longer side of L1 and L2

[0168] S1 and S2 are the distances along the shorter side.

Claims

1. A probe card comprising: a wiring substrate having an insulating film and electrode pads formed thereon; and probes mounted on the electrode pads, characterized in that, The probe has alignment marks that can be identified from the side opposite to the wiring substrate. The alignment mark is located on the wiring substrate at a position further out than the electrode pads. The insulating film is a light-transmitting thin film covering the interlayer wiring, and a reflection-preventing film with lower light transmittance than the insulating film is formed in a certain area on the insulating film. The anti-reflective film is formed in the area including the position corresponding to the alignment mark and its surrounding area.

2. The probe card according to claim 1, characterized in that, The anti-reflective film is light-nontransmissive.

3. The probe card according to claim 1, characterized in that, The insulating film contains a photosensitive polymer and is patterned through exposure and development processes.

4. The probe card according to claim 1, characterized in that, The anti-reflective film is formed by selective application using micro-nozzles.

5. The probe card according to claim 1, characterized in that, The reflectivity of the anti-reflection film is lower than that of the insulating film.

6. The probe card according to claim 1, characterized in that, The anti-reflection film is formed so as not to overlap with the electrode pads.

7. The probe card according to any one of claims 1 to 6, characterized in that, Multiple probes are arranged in a given direction to form a probe group. The anti-reflection film is formed in an elongated shape extending along the probe group, in a region including the position corresponding to the alignment mark of the plurality of probes belonging to the probe group and the area surrounding it.

8. The probe card according to claim 7, characterized in that, The two probe groups are arranged in parallel to each other. The anti-reflection film is formed between the two probe groups, in a region including the position corresponding to the alignment mark of the plurality of probes belonging to the two probe groups respectively, and the area surrounding it.

9. The probe card according to claim 7, characterized in that, The distance from both ends of the anti-reflective film along its long side to the position corresponding to the nearest alignment mark is longer than the distance from both ends of the anti-reflective film along its short side to the position corresponding to the alignment mark.

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