Semiconductor laser device and method for manufacturing semiconductor laser device

Abstract

In a semiconductor laser device (100, 101, 102), there are provided: a substrate (51); a semiconductor laser element (50) placed on the substrate (51) and integrated in a single chip; a substrate electrode (54) and an electrode (52) provided on the substrate (51) side and the side opposite to the substrate (51) of the semiconductor laser element (50), respectively; a mirror (3, 3a) reflecting incident laser light in a direction perpendicular to the substrate (51); a second mirror (2) reflecting incident laser light in a direction horizontal to the substrate (51); and a lens (4) condensing incident laser light.

Description

Technical Field

[0001] This application relates to semiconductor laser devices and methods for manufacturing semiconductor laser devices. Background Technology

[0002] In existing semiconductor laser devices, a multi-faceted mirror located at the center of the chip is used to extract light from four active layers integrated within a chip in the vertical direction (for example, see Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 9-051147

[0004] The aforementioned semiconductor laser device requires emission faces with active layers in four directions, necessitating end-face coating on all four sides of the chip. Therefore, even if processing is completed on two of the four sides of the chip first, end-face coating must still be applied to the remaining two sides after the chip is broken down into individual chips, resulting in extremely poor productivity. Summary of the Invention

[0005] This application discloses a technology for solving the above-mentioned problems. Its purpose is to provide a semiconductor laser device that can be manufactured by coating the end faces of only two sides of the chip in a semiconductor laser device that can extract light from multiple light sources integrated in a chip in a vertical direction.

[0006] The semiconductor laser device disclosed in this application is characterized by having:

[0007] substrate;

[0008] A semiconductor laser element has a laser source, wherein multiple laser sources are arranged side by side along the length direction of the substrate, and all of the multiple laser sources emit laser light along the length direction of the substrate.

[0009] A reflector, positioned opposite the laser source, reflects the laser light emitted from the laser source in a direction orthogonal to the surface of the substrate; and

[0010] The lens is arranged adjacent to the reflector on the same side as the substrate and the semiconductor laser element, and is placed on the side where the laser reflected by the reflector travels.

[0011] According to the semiconductor laser device disclosed in this application, a semiconductor laser device that can extract light from multiple light sources integrated in a chip in the vertical direction can be manufactured by coating the end faces of only two sides of the chip. Attached Figure Description

[0012] Figure 1 This is a top view of the semiconductor laser device according to Embodiment 1.

[0013] Figure 2 yes Figure 1 A magnified view of a portion of the image.

[0014] Figure 3 This is a cross-sectional view of the semiconductor laser device according to Embodiment 1.

[0015] Figure 4 This is a cross-sectional view of the semiconductor laser device according to Embodiment 1.

[0016] Figure 5 This is a cross-sectional view of the semiconductor laser device according to Embodiment 1.

[0017] Figure 6 This is a cross-sectional view of the semiconductor laser device according to Embodiment 1.

[0018] Figure 7 This is a cross-sectional view of the semiconductor laser device according to Embodiment 1.

[0019] Figure 8 This is a top view of the semiconductor laser device according to Embodiment 2.

[0020] Figure 9 This is a cross-sectional view of the semiconductor laser device according to Embodiment 2.

[0021] Figure 10 This is a cross-sectional view of the semiconductor laser device according to Embodiment 2.

[0022] Figure 11 This is a cross-sectional view of the semiconductor laser device according to Embodiment 2.

[0023] Figure 12 This is a top view of the semiconductor laser device according to Embodiment 3.

[0024] Figure 13 This is a cross-sectional view of the semiconductor laser device according to Embodiment 3.

[0025] Figure 14 This is a cross-sectional view of the semiconductor laser device according to Embodiment 3.

[0026] Figure 15 This is a cross-sectional view of the semiconductor laser device according to Embodiment 3.

[0027] Figure 16 This is a cross-sectional view of the semiconductor laser device according to Embodiment 3.

[0028] Figure 17 This is a cross-sectional view showing the semiconductor laser device according to embodiments 1 to 3.

[0029] Figure 18 These are top views and cross-sectional views of the semiconductor laser device according to Embodiment 4.

[0030] Figure 19 This is a process diagram illustrating the end-face coating process in the semiconductor laser device according to Embodiment 1.

[0031] Figure 20 This is an explanatory diagram illustrating the use of a fixture for end-face coating in the semiconductor laser device according to Embodiment 1. Detailed Implementation

[0032] This application relates to a semiconductor laser device comprising a mirror, a lens, and multiple active layers for changing the direction of light travel. Hereinafter, a specific embodiment of this semiconductor laser device will be described using the accompanying drawings.

[0033] Implementation Method 1

[0034] The following uses Figures 1 to 7 The semiconductor laser device 100 according to Embodiment 1 will be described in detail.

[0035] in addition, Figure 2 Is this the Figure 1 The image shows an enlarged view of the central portion P of the semiconductor laser device 100. Additionally, Figure 3 yes Figure 1 The figure shows a cross-sectional view of the EE. Hereinafter, using these figures, the general structure of the semiconductor laser device 100 related to Embodiment 1 will be described first.

[0036] from Figure 3 It can be seen that the semiconductor laser device 100 has a sub-base 30 disposed on its entire lower surface in the thickness direction, and a semiconductor laser element 50 (equivalent to) is mounted on top of it, which is bonded to the sub-base electrode 31 in contact with the sub-base 30 by solder 33. Figure 3 (The portion surrounded by dashed lines). Furthermore, the semiconductor laser element 50 is disposed in the aforementioned central portion P (refer to...). Figure 1 The optical system consists of a mirror and a lens, multiple light sources disposed in the periphery of the optical system, and a substrate 51 for mounting the optical system and the light sources (these components will be described in detail below). The lead wire 5 is connected via a sub-base electrode 32, which is separate from the sub-base electrode 31 and disposed at different positions on the sub-base 30.

[0037] Here, the sub-base 30 is made of aluminum nitride (AlN), the sub-base electrodes 31 and 32 formed on the sub-base 30 are made of Au, the solder 33 is made of Sn / Ag, and the lead wire 5 is made of Au.

[0038] In addition, ceramic materials such as alumina (Al2O3) can be used as the material for the sub-base 30; conductive materials such as Cu, Pt, and Si can be used as the materials for the sub-base electrodes 31 and 32; lead-free solders such as Sn / Ag / Cu, Sn / Ag / Bi / In, Sn / Ag / Cu / Ni / Ge, Sn / Bi, Sn / Bi / Ag, and Sn / Bi / Cu can be used as the material for the solder 33; and metallic materials such as Au alloy, Cu, Al, and Ag can be used as the material for the lead wire 5.

[0039] Next, use Figure 1 , Figure 2 The trajectory (light trail) of the laser in the semiconductor laser device 100 according to Embodiment 1 will be described. Here, in particular, Figure 1 The light sources 1a and 1b shown are representative examples. First, the trajectories (light trails) of the lasers emitted from the six light sources 1a to 1f of the semiconductor laser device 100 will be explained. Furthermore, in Figure 1 In the figure, the two ends of the lead 5 are connected to the electrode 52 and the sub-base electrode 32. In addition, the two electrodes 52 arranged on the left and right sides of the figure are disposed on the common insulating film 53 described later.

[0040] An optical system consisting of a mirror and a lens (here, a lens that functions as a condenser lens) mounted on the central portion P is used to direct the emitted light from light sources 1a to 1f to... Figure 1 The semiconductor laser device 100 shown can change its direction of travel in the left-right direction (hereinafter also referred to as the length direction) or in the direction perpendicular to the plane of the paper. Furthermore, the optical system described above is arranged symmetrically with respect to the shape centerline of the semiconductor laser device 100; here, the cross-section BB line is a line corresponding to the shape centerline. Additionally, the light source groups 1a to 1c and light source groups 1d to 1f are also arranged approximately symmetrically with respect to the shape centerline.

[0041] Specifically, firstly, the outgoing light emitted from the light source 1a reaches the horizontal direction of the 45-degree triangular prism using a reflector 2 (hereinafter also referred to as the second reflector). Figure 1The center line of the semiconductor laser device 100 shown (here, the section BB line becomes the line corresponding to the center line of the second reflector) is reflected on its surface, and its direction of travel is bent by about 90°, entering in a certain direction of the reflector 3 (hereinafter also simply referred to as the reflector) in a 45-degree angle perpendicular to the truncated quadrangular shape of the central part of the semiconductor laser element 50 (see reference). Figure 1 , Figure 2 The light trace 10a). The light that reaches the 45-degree vertical direction is reflected by the inclined surface of the reflector 3 at a 45-degree angle relative to the substrate, and then passes through the hemispherical lens 4. Figure 1 and Figure 2 Proceeding in the forward direction (perpendicular to the paper) (refer to) Figure 2 The reflection point rp a ).

[0042] Next, the emitted light from the light source 1b bypasses the 45-degree triangular prism-shaped horizontal reflector 2 and directly reaches the 45-degree vertical reflector 3 placed in the central part of the semiconductor laser element 50. After being reflected by the inclined surface of the truncated square 45-degree vertical reflector 3, it passes through the hemispherical lens 4 and... Figure 1 and Figure 2 It is emitted in the direction of near-forward (perpendicular to the paper) (refer to) Figure 1 , Figure 2 Light trace 10b and Figure 2 The reflection point rp b ).

[0043] Furthermore, the emitted light from light source 1c, light source 1d, and light source 1f follows the same light path as the emitted light from light source 1a (refer to the above-mentioned light sources 1c, 1d, and 1f respectively). Figure 1 , Figure 2 The light trails 10c, 10d, and 10f follow the same path as the light trail emitted from light source 1e (see reference). Figure 1 , Figure 2 The light trail (10e) is moving.

[0044] The optical system described above is arranged symmetrically with respect to the shape centerline of the semiconductor laser device 100, and the BB line in this section corresponds to the shape centerline. Furthermore, the light source groups 1a to 1c and 1d to 1f are also arranged approximately symmetrically with respect to the shape centerline.

[0045] Next, the detailed structure of the semiconductor laser device representing the light trace described above will be discussed based on... Figure 1 This is illustrated using sectional views from multiple locations. Here, based on representation... Figure 1The sectional view of section AA shown ( Figure 4 B), representing the sectional view of section BB ( Figure 5 B), representing the sectional view of section CC ( Figure 6 B), representing the sectional view of section DD ( Figure 7 The following will explain in turn.

[0046] First, use Figure 4 The detailed structure of the semiconductor laser element 50 is described below. Figure 4 Depend on Figure 4 A and Figure 4 The two diagrams, B and C, constitute the structure. Figure 4 A is a schematic diagram of the manufacturing process of a semiconductor laser element, enclosed by a dashed box on the left side of the diagram, and its outline is shown in three steps. Figure 4 B is shown on the right side of the figure. Figure 1 It is a cross-sectional view of section AA, and is a structural diagram used to illustrate the structure of the semiconductor laser element 50 when it is placed on the sub-base 30, as well as the detailed contents of the constituent elements of the semiconductor laser element.

[0047] In the above Figure 4 In B, the semiconductor laser element 50 is composed of the following components: an InP substrate 51; an InGaAsP active layer 55 formed on the substrate 51; an InGaAsP diffraction grating 56 formed on the active layer 55; a p-InP blocking layer 57 and an n-InP blocking layer 58 formed on one side of the substrate 51, the active layer 55, and the diffraction grating 56; an InP cladding layer 59 formed on the p-InP blocking layer 57; an InGaAs contact layer 60 formed on the cladding layer 59; an SiN insulating film 53 formed on the contact layer 60; an Au electrode 52 formed on the portion of the contact layer 60 exposed at the opening of the insulating film 53; and an Au substrate electrode 54 formed on the side opposite to the active layer.

[0048] The substrate 51 can be replaced by materials such as GaAs; the active layer 55 can be replaced by materials such as AlGaInAs or GaInAsP; the barrier layer 57 can be replaced by materials such as Fe-InP; the insulating film 53 can be replaced by materials such as SiO2; and the electrodes 52 and the substrate electrode 54 can be replaced by materials such as Pt, Ag, or Cu.

[0049] Next, use Figure 5 The detailed structure of the semiconductor laser element 50 is described below. Figure 5 Depend on Figure 5 A and Figure 5The two diagrams, B and C, constitute the structure. Figure 5 A is a schematic diagram of the manufacturing process of a semiconductor laser element, enclosed by a dashed box on the left side of the diagram, and its outline is shown in three steps. Figure 5 B is shown on the right side of the figure. Figure 1 It is a cross-sectional view of section BB, and is a structural diagram used to illustrate the structure of the semiconductor laser element 50 when it is placed on the sub-base 30, as well as the detailed contents of the constituent elements of the semiconductor laser element.

[0050] In the above Figure 5 In B, the semiconductor laser element 50 is composed of the following components: a substrate electrode 54; a substrate 51; a multilayer sandwich structure consisting of a p-InP barrier layer 57, an n-InP barrier layer 58 and a p-InP barrier layer 57 formed on the substrate; the aforementioned cladding layer 59 formed on the p-InP barrier layer 57; a contact layer 60 formed on the cladding layer 59; an insulating film 53 formed on the p-InP barrier layer 57 in the portion except around the lens periphery; a photosensitive acrylic resin 61 formed by embedding it into the unevenness of the substrate to make it planar; and a hemispherical lens 4 formed by processing the photosensitive acrylic resin 61.

[0051] Next, use Figure 6 The detailed structure of the semiconductor laser element 50 is described below. Figure 6 Depend on Figure 6 A and Figure 6 The two diagrams, B and C, constitute the structure. Figure 6 A is a schematic diagram of the manufacturing process of a semiconductor laser element, enclosed by a dashed box on the left side of the diagram, and its outline is shown in three steps. Figure 6 B is shown on the right side of the figure. Figure 1 It is a cross-sectional view of the CC section, and is a structural diagram used to illustrate the structure of the semiconductor laser element 50 when it is placed on the sub-base 30, as well as the detailed contents of the constituent elements of the semiconductor laser element.

[0052] Figure 6 B represents Figure 1 A cross-sectional view of the CC section. For the semiconductor laser element 50, the periphery of lens 4 is... Figure 5 The cross section is the same as that in case B, except for the other parts. Figure 4 The cross-section inside the range shown by X1 in B is the same.

[0053] at last, Figure 7 express Figure 1 A cross-sectional view of section DD in the image. For the semiconductor laser element 50, the periphery of lens 4 is... Figure 5 The cross section is the same as that in case B, except for the other parts. Figure 4 The cross-section inside the range shown by X1 in B is the same.

[0054] Next, an example of the manufacturing method of the semiconductor laser element 50 described above will be described using the accompanying drawings. After forming the active layer 55 and the diffraction grating 56 on the substrate 51 by epitaxial growth, as follows... Figure 4 As shown in A, these layers are embedded with cladding 59a. This is in addition to the waveguide portion, i.e. Figure 4 The area outside the region (0.5–2 μm) indicated by symbol X1 in section B is dry etched down to the substrate 51 layer disposed below the active layer 55. After this dry etching, a sandwich structure consisting of three barrier layers—a p-InP barrier layer 57, an n-InP barrier layer 58, and another p-InP barrier layer 57—is embedded by epitaxial growth. Another cladding layer 59b is then formed on top of the cladding layer 59a and the barrier layers by epitaxial growth. Furthermore, after forming a contact layer 60 on top of the cladding layer 59b by epitaxial growth, the p-InP barrier layer 57 is etched completely away from the region (8–30 μm) indicated by symbol X2. At this time, by simultaneously etching, a layer is also fabricated... Figure 7 The 45-degree angled triangular prism horizontally is represented by mirror 2.

[0055] Next, an anisotropic etching process using ClF3 gas clusters was employed to form a shape at an angle of 45 degrees relative to the upper surface. Figure 5 B, Figure 6 The groove 62 shown in B forms a truncated quadrangular mirror 3 at a 45-degree angle vertically. After forming an insulating film 53 by CVD, the insulating film 53 on the upper part of the waveguide is removed by dry etching. Then, an electrode 52 is formed at the opening of the insulating film 53 by sputtering.

[0056] Photosensitive acrylic resin 61 is applied by spin coating, thereby filling the tank 62 with photosensitive acrylic resin 61 and planarizing the surface. The photosensitive acrylic resin 61 on the electrode pads is removed by a developing process. The photosensitive acrylic resin 61 on the upper part of the frustum-shaped mirror 3 at a 45-degree angle is used to form a lens 4 by grayscale photolithography. Finally, the substrate electrode 54 is formed by sputtering.

[0057] The above describes the process of using photosensitive acrylic resin 61 to fill the groove 62 and planarize its surface. However, when the incident material is InP, other materials can also be used as long as the critical angle for total internal reflection is less than 45 degrees (refractive index less than 2.3). Furthermore, other anisotropic etching methods can also be used to form the groove 62. Additionally, the insulating film 53 can be formed by sputtering or similar methods, or the electrode 52 and substrate electrode 54 can be formed by vapor deposition.

[0058] Next, use Figure 19 , 20 The method of separating the semiconductor laser element 50, which is fabricated by wafer technology in the semiconductor laser device of Embodiment 1, into individual chips and applying end-face coating will be described. Figure 19 The process for describing the end-face coating is described below. Figure 19 A, Figure 19 B, Figure 19 The C component.

[0059] Here, Figure 19 Figure A represents the semiconductor laser element 50a in its wafer state. Figure 19 Figure B represents a semiconductor laser element 50b fabricated in a rod state (also known as a rod-state semiconductor laser element 50b). Figure 19 C is a diagram representing the semiconductor laser element 50c in its chip state. Additionally, Figure 20 This diagram is a view from the surface side (the near front side in the direction perpendicular to the paper, hereinafter the same) when the semiconductor laser element 50 is arranged in the fixture to illustrate the end-face coating. It is a diagram of the semiconductor laser element after it has been processed into a rod-shaped semiconductor laser element 50b, in order to coat the a-side and b-side (the two ends in the length direction of the chip state are the a-side and b-side).

[0060] Semiconductor laser devices are transformed from wafer state (refer to...) through a cleaving process. Figure 19 A) is processed into a rod state (refer to) Figure 19 (B). The semiconductor laser element 50b in this rod state is used Figure 20The clamps 70 shown are arranged in multiple configurations, with side a as the surface and side b as the back side (the inner side perpendicular to the paper surface). While held by Si dummy rods 71 ​​on both sides, they are adjusted using multiple adjusting screws 73 arranged longitudinally and laterally until the voids 72 disappear, and then fixed using the rod end fittings 74 provided on the clamps. Si dummy rods are used because Si material does not cause strain like metallic materials, thus avoiding localized stress on the semiconductor laser element during clamping. It is a stable material whose state remains unchanged through the formation of a natural oxide film on its surface, and has minimal surface unevenness. When coating the end faces of the semiconductor laser element, films are formed on each surface and back face of the multiple rod-shaped semiconductor laser element 50b (as a whole) arranged with the clamps using a sputtering method, thereby forming a Si, SiO2, and Al2O3 coating with the desired reflectivity on each of the a and b faces. After coating the a and b faces, the components are separated... Figure 19 The chip state is shown in C.

[0061] Since the end-face coating in the semiconductor laser device of Embodiment 1 only needs to be applied to the a-side and the b-side, the process can be completed up to the step of end-face coating (also called end-face coating) in the rod state, as described above. On the other hand, in the device of Patent Document 1, it is necessary to... Figure 19 As shown in C, all four end faces (a, b, c, and d) of a chip are coated. For example, after coating end faces a and b in the rod state, the chip is processed and then coated with end faces c and d for each processed chip.

[0062] According to the semiconductor laser device of Embodiment 1, by using a reflector that reflects light in a direction horizontal to the substrate, the light travel path is changed to a direction perpendicular to the resonator, and the light is focused at the center of the substrate. Furthermore, by using a reflector that reflects light in a direction perpendicular to the substrate, the light focused at the center of the substrate is reflected in a direction perpendicular to the substrate, thereby enabling the extraction of 4 to 6 beams of light in a direction perpendicular to the substrate. Therefore, a semiconductor laser device that can be manufactured using only end-face coatings on two sides of the chip can be provided.

[0063] Furthermore, it is possible to extract light by combining the light reflected by a mirror that reflects light in a direction horizontal to the substrate and a mirror that reflects light in a direction perpendicular to the substrate, making coupling with an external optical fiber easier.

[0064] Implementation Method 2

[0065] The following is for reference Figures 8-11The semiconductor laser device 101 according to Embodiment 2 will be described in detail.

[0066] Figure 8 This is a top view of the semiconductor laser device related to Embodiment 2. The 45-degree vertical reflector 3 in Embodiment 1 (shaped like a frustum) is replaced with a 45-degree vertical reflector 3a (shaped like a pyramid). An Al coating 6 is applied to the surfaces of both the 45-degree vertical reflector 3a and the 45-degree horizontal reflector 2 (shaped like a triangular prism). Since the structure of the semiconductor laser element 50 surrounding the lens 4 differs from that in Embodiment 1, a cross-sectional view is used for explanation.

[0067] Figure 9 express Figure 8 BB cross-sectional view. The fabricated shape of the semiconductor laser element 50 is the same as that in Embodiment 1. Figure 5 Unlike the substrate shown in B, an Al coating 6 is applied to the processed surface.

[0068] Figure 10 express Figure 8 The CC cross-sectional view in [the image]. For semiconductor laser element 50, the lens periphery is [the area shown in the image]. Figure 9 The same cross-section, except for the parts in embodiment 1. Figure 4 The cross section inside X1 of B is the same.

[0069] Figure 11 express Figure 8 The DD cross-sectional view in the image. For semiconductor laser element 50, the lens periphery is... Figure 9 The same cross-section, except for the parts in embodiment 1. Figure 4 The cross section inside X1 of B is the same.

[0070] In this embodiment, an Al coating 6 is applied to the surfaces of a 45-degree angle vertical mirror 3a and a 45-degree angle triangular prism-shaped horizontal mirror 2. However, in the case of semiconductor laser elements that do not require high light output, even a structure that cannot induce total internal reflection is not a problem. Therefore, the same effect can be achieved even without applying the Al coating 6.

[0071] According to Embodiment 2, when a material with a refractive index that cannot induce total internal reflection is used in the formation of the reflector, light can be reflected with low loss.

[0072] Implementation Method 3

[0073] The following is for reference Figures 12-16 The semiconductor laser device according to Embodiment 3 will be described in turn.

[0074] first, Figure 12This is a top view of the semiconductor laser device 102 according to Embodiment 3. The 45-degree vertical reflector 3a and the 45-degree triangular prism horizontal reflector 2 of Embodiment 2 are formed by etching the semiconductor laser element 50 into a concave shape, without applying the Al coating 6. A lens 4 is formed on the back side of the semiconductor laser element 50, and the electrode on the active layer 55 side of the semiconductor laser element 50 is used in a junction-down manner for chip bonding. Therefore, the following describes the structure of the semiconductor laser element 50 around the lens 4, which differs from that of Embodiment 2, using a cross-sectional view.

[0075] Next, Figure 13 express Figure 12 A cross-sectional view of EE in [the image]. For the semiconductor laser element 50, relative to Embodiment 1... Figure 4 In section B, the outer periphery of the substrate is not etched but remains, and a buffer layer 63 is formed on the contact layer 60 on the outer periphery of the substrate. This is to reduce the thermal stress applied to the active layer 55 when the chip is bonded in a junction manner.

[0076] Next, Figure 14 express Figure 12 The BB cross-sectional view in the figure. For the semiconductor laser element 50, the textured shape of the substrate is different from that in Embodiment 2. Figure 9 In reverse, the Al coating 6 and photosensitive acrylic resin 61 are absent. Additionally, a lens 4 is formed on the side facing the active layer.

[0077] Next, Figure 15 express Figure 12 The CC cross-sectional view in [the image]. For semiconductor laser element 50, the lens periphery is [the area shown in the image]. Figure 14 The same cross-section, except for the parts that are the same as Figure 13 The cross-section inside X1 is the same.

[0078] at last, Figure 16 express Figure 12 The DD cross-sectional view in the image. For semiconductor laser element 50, the lens periphery is... Figure 14 The same cross-section, except for the parts that are the same as Figure 13 The cross-section inside X1 is the same.

[0079] According to Embodiment 3, the semiconductor laser device simplifies the manufacturing process because it eliminates the need for a planarization process to form a lens. Furthermore, since it has multiple light-emitting layers, the total current and heat generation during operation are high; however, by using it in a junction configuration, efficient heat dissipation is achieved.

[0080] In embodiments 1, 2, and 3 described above, a lens 4 is included in the semiconductor laser element 50. However, from the viewpoint of improving productivity, light combining can also be performed using an external lens. In this case, for example, from... Figure 5 The semiconductor laser device shown in B is obtained by removing the photosensitive acrylic resin 61 and the lens 4. Figure 17 The construction shown is also valid.

[0081] Implementation Method 4

[0082] The following uses Figure 18 A, Figure 18 B Figure 18 C will describe the semiconductor laser device according to Embodiment 4. Here, Figure 18 B is Figure 18 The cross-sectional view of point M1-M1 of A (dash line). Figure 18 C is Figure 18 A cross-sectional view at point M2-M2 of the dashed line A.

[0083] In embodiments 1, 2, and 3 above, the angles of the 45-degree triangular prism horizontal reflector and the 45-degree vertical reflector are the most standard 45 degrees, but as long as the final output light has a 90-degree angle relative to the substrate, it is acceptable (see reference). Figure 2 and Figure 18 A), therefore, for example, as Figure 18 A, Figure 18 As shown in B, a non-45-degree angled triangular prism horizontally can also be formed at an angle α of 80 degrees relative to the substrate using a reflector 7 (also called the third reflector 7), such as... Figure 18 A, Figure 18 As shown in C, a non-45-degree vertical direction can also be formed with a 35-degree tilt angle β relative to the substrate using a reflector 8 (also called a fourth reflector 8).

[0084] This application describes various exemplary embodiments and examples, but the various features, forms, and functions described in one or more embodiments are not limited to the application of specific embodiments, and can also be applied to embodiments alone or in various combinations. Therefore, countless modifications not illustrated can be conceived within the scope of the technology disclosed in this application. For example, this includes modifications, additions, or omissions of at least one constituent element, and even cases where at least one constituent element is extracted and combined with constituent elements of other embodiments. Specifically, for example, the end-face coating described in Embodiment 1 is also applicable to Embodiments 2-4.

[0085] Explanation of reference numerals in the attached figures

[0086] 1a, 1b, 1c, 1d, 1e, 1f... Light source; 2... 45-degree angled triangular prism horizontal reflector (second reflector); 3, 3a... 45-degree angled vertical reflector (reflector); 4... Lens; 5... Lead wire; 6... Al coating; 7... Non-45-degree angled triangular prism horizontal reflector (third reflector); 8... Non-45-degree angled vertical reflector (fourth reflector); 10a, 10b, 10c, 10d, 10e, 10f... Light trace; 30... Sub-base; 31, 32... Sub-base electrodes; 33... Solder; 50... Semiconductor laser element; 50a... Wafer state Semiconductor laser element; 50b... Semiconductor laser element in rod state; 50c... Semiconductor laser element in chip state; 51... Substrate; 52... Electrode; 53... Insulating film; 54... Substrate electrode; 55... Active layer; 56... Diffraction grating; 57, 58... Barrier layer; 59, 59a, 59b... Cladding layer; 60... Contact layer; 61... Photosensitive acrylic resin; 62... Groove; 63... Buffer layer; 70... Fixture; 71... Si dummy rod; 72... Void; 73... Adjusting screw; 74... Rod end setting part; 100, 101, 102... Semiconductor laser device.

Claims

1. A semiconductor laser device, characterized in that, have: substrate; A semiconductor laser element has a laser source, wherein multiple laser sources are mounted side by side along the length direction of the substrate, and all of the multiple laser sources emit laser light along the length direction of the substrate. A reflector, positioned opposite the laser source, reflects the laser light emitted from the laser source in a direction orthogonal to the surface of the substrate; and A lens is disposed adjacent to the mirror on the same side as the substrate and the semiconductor laser element, and is placed on the side on which the laser reflected by the mirror travels.

2. The semiconductor laser device according to claim 1, characterized in that, The reflector is a frustum or pyramid shape with a 45-degree inclined surface relative to the substrate.

3. The semiconductor laser device according to claim 1 or 2, characterized in that, The device includes a second reflector, which is different from the first reflector. The second reflector reflects multiple laser beams emitted from the semiconductor laser element in an in-plane direction along the surface of the substrate in a direction orthogonal to the emitted laser beams.

4. The semiconductor laser device according to claim 3, characterized in that, The second reflector is a triangular columnar body with a 45-degree angle when viewed from the surface of the substrate.

5. The semiconductor laser device according to claim 3, characterized in that, The surface of the second reflector has an Al coating film.

6. The semiconductor laser device according to claim 4, characterized in that, The surface of the second reflector has an Al coating film.

7. A semiconductor laser device, characterized in that, have: substrate; A semiconductor laser element having multiple laser sources that emit laser light along the length of the substrate arranged side by side; A triangular prism-shaped third reflecting mirror is mounted opposite the laser source and reflects the laser emitted from the laser source in a direction that is in-plane along the surface of the substrate and is not perpendicular to the emitted laser. The fourth reflector is mounted at the end of the laser source and is in the shape of a truncated pyramid or a multi-faceted pyramid with an angle other than 45 degrees relative to the substrate. It reflects the laser reflected by the third reflector in a direction orthogonal to the surface of the substrate. as well as A lens is configured to be adjacent to the fourth reflector and placed on the side in which the laser reflected by the fourth reflector travels.

8. The semiconductor laser device according to claim 7, characterized in that, The surface of the third reflector has an Al coating film.

9. A method for manufacturing a semiconductor laser device, which is the method for manufacturing a semiconductor laser device according to claim 1 or 7, characterized in that, It has a secondary base. The semiconductor laser element is mounted by bonding the chip to the sub-base in a junction manner.

Images