Mpcvd diamond growth equipment with seed crystal temperature self-check function

Abstract

The present invention provides an MPCVD diamond growth device with a seed crystal temperature self-detection function, and relates to the technical field of vapor phase deposition. The MPCVD diamond growth device with a seed crystal temperature self-detection function comprises a diamond growth furnace body and an air inlet pipe installed on one side of the diamond growth furnace body and connected to the diamond growth furnace body, and an intermediate pipeline is fixedly connected to the top surface of the inner part of the diamond growth furnace body. The MPCVD diamond growth device with a seed crystal temperature self-detection function enables the fully mixed reaction gas to be further homogenized through the annular equidistantly distributed homogenizing holes through the alternating lifting and lowering of the lifting assembly, and the gas is finally discharged in corresponding directions through the air holes located in the concave part of the second exhaust head and the air holes arranged on the outer surface of the first exhaust head, which not only achieves further mixing of the reaction gas, but also enables the gas to be evenly laid layer by layer, so that the reaction gas can react evenly and fully with graphite.

Description

Technical Field

[0001] The invention relates to a diamond growth device, in particular to an MPCVD diamond growth device with a seed crystal temperature self-detection function, belonging to the technical field of vapor deposition. Background Art

[0002] Chemical vapor deposition is a chemical technology that is widely used to purify substances, develop new crystals, and deposit various single-crystal, polycrystalline or glassy inorganic thin film materials. These materials can be oxides, sulfides, nitrides, carbides, etc. Their physical functions can be precisely controlled through the vapor phase doping deposition process.

[0003] According to the invention of patent number CN 115852342 A, a diamond vapor deposition device is disclosed, including a furnace body and a guide tube rotatably arranged on the top of the furnace body, a bottom plate is fixedly connected to the inner cavity of the furnace body, and a partition is slidably arranged between the bottom plate and the top wall of the furnace body, and the guide tube passes through the partition and is threadedly connected with the partition; a first exhaust hole and a second exhaust hole are opened on the bottom plate, a guide component is arranged between the partition and the guide tube, and a sealing component matched with the guide component is arranged at the bottom end of the bottom plate, and the sealing component can alternately seal the first exhaust hole and the second exhaust hole, so that the gas passing through the guide component is alternately discharged from the bottom plate; this device cooperates with the guide component and the sealing component through the arranged guide component, so that the mixed gas can be continuously transported to the inside of the furnace body, and the partition is used to make the gas be evenly mixed before being discharged downward, thereby improving the uniformity of the later deposition, and the continuity of the gas is good during the downward discharge process.

[0004] The above-mentioned device sets a first exhaust hole and a second exhaust hole in the bottom plate, and through the alternate sealing of the first exhaust hole and the second exhaust hole, the reaction gas is fully mixed and then alternately discharged from the bottom of the bottom plate, and finally passes through the gas equalizing plate to react with the graphite. However, there will be certain problems in actual use. For example, in the process of alternately sealing the first exhaust hole and the second exhaust hole, the gas flow rate discharged from the first exhaust hole decreases during the sealing process of the first exhaust hole. At this time, the second exhaust hole will slowly open, and the gas flow rate discharged from the second exhaust hole will increase, so that the volume of gas discharged from the first exhaust hole and the second exhaust hole is different, resulting in uneven gas distribution. Since the first exhaust hole and the second exhaust hole are not evenly distributed, the gas reaching the gas equalizing plate becomes more uneven at the moment when the first exhaust hole and the second exhaust hole are alternately sealed, and the gas passing through the gas equalizing plate is not uniform enough, which affects the effect of the reaction gas reacting with the graphite surface. Summary of the invention

[0005] 1. Technical issues to be solved

[0006] The purpose of the present invention is to provide an MPCVD diamond growth device with a seed crystal temperature self-detection function in order to solve the above-mentioned problem, so as to solve the problem in the prior art that the first exhaust hole and the second exhaust hole are not evenly distributed. Therefore, at the moment when the first exhaust hole and the second exhaust hole are alternately sealed, the gas reaching the gas uniformizing plate is not uniform, thereby making the gas passing through the gas uniformizing plate not uniform enough, affecting the effect of the reaction gas and the graphite surface reaction.

[0007] (II) Technical solution

[0008] To achieve the above objectives, the present invention is implemented through the following technical solutions: an MPCVD diamond growth device with a seed crystal temperature self-detection function, comprising a diamond growth furnace body and an air inlet pipe installed on one side of the diamond growth furnace body and connected to the diamond growth furnace body, an intermediate pipe is fixedly connected to the top surface of the inner part of the diamond growth furnace body, a first exhaust head and a second exhaust head are fixedly connected to the outer side of the intermediate pipe, a first air outlet hole and a second air outlet hole are opened on the outer side of the intermediate pipe, a lifting assembly is arranged at the position of the first air outlet hole and the second air outlet hole, and the lifting assembly comprises two movable slides that are sealed and slide on the outer side of the intermediate pipe;

[0009] The bottom surface of the diamond growth furnace body is provided with a deposition table for reaction, the inner side wall of the diamond growth furnace body is provided with a temperature sensor for detecting the reaction temperature in the diamond growth furnace body, the second exhaust head is recessed upward on the side close to the deposition table, the air holes are distributed in a circular shape and equidistantly at the recessed part of the second exhaust head, the cross-sectional shape of the first exhaust head is set to be a circular ring, and the air holes are distributed in a circular shape and equidistantly at the outer surface of the first exhaust head;

[0010] The deposition table includes a hollow pedestal and a table top, the table top is arranged at the top opening of the hollow pedestal, an actuator is arranged inside the hollow pedestal, the bottom of the actuator is rotatably connected to the hollow pedestal through a bearing, the actuator includes a main electric cylinder, at least two auxiliary electric cylinders are installed at the end of the output end of the main electric cylinder, an arc-shaped protrusion is arranged at the end of the output end of the auxiliary electric cylinder, an embedding groove is arranged on the protrusion, a connecting rod is fixedly connected at the center of the output end of the main electric cylinder, a ball joint connection seat is connected to the end of the connecting rod, and the ball joint connection seat is installed at the bottom of the table top;

[0011] At least two groups of limiting components are fixed to the table top, and the limiting components include a rotating connection seat, and a limiting rod is movably hingedly installed on the rotating connection seat, and a short spring is fixedly connected to the limiting rod toward one side of the table top.

[0012] Preferably, the movable slide is recessed inwardly on one side close to the first exhaust head, and two groups of second springs are fixedly connected to the bottom of the movable slide. Both side walls inside the movable slide are slidably connected with protrusions, and one side of the protrusion is set to an arc surface. The protrusion is fixedly connected to the first spring on one side close to the inner wall of the diamond growth furnace body, and grooves are provided on both sides of the inner wall of the diamond growth furnace body. One end of the protrusion is set in the groove and slidably cooperates with the groove, and the first spring is set in the groove and fixed to the inner wall of the diamond growth furnace body.

[0013] Preferably, one group of the lifting assemblies is matched with an adjusting assembly on the top, and the adjusting assembly includes a pull rod fixedly connected to the top of one of the movable slides, the pull rod passes through the diamond growth furnace body and is slidably connected to the diamond growth furnace body, and a sealing block is fixedly connected to the bottom of the pull rod, the pull rod extends into the air intake pipe and is slidably connected to the air intake pipe, and the air intake pipe includes a first pipe and a second pipe. The first pipe is connected to the second pipe and is combined to form a U shape, and the first pipe and the second pipe can be alternately sealed by lifting and lowering the sealing block.

[0014] Preferably, the second exhaust head is arranged outside the first exhaust head, and air holes are provided on one side wall of the first exhaust head and the second exhaust head, and the air holes of the first exhaust head and the second exhaust head are opposite to each other. Through the alternating lifting of two groups of lifting components, the first air outlet hole and the second air outlet hole can be sealed alternately, so that the reaction gas passes into the middle pipe and is ejected through the first exhaust head and the second exhaust head.

[0015] Preferably, one side of the diamond growth furnace body is connected to a microwave transmitter via a waveguide tube, and the other side of the diamond growth furnace body is connected to a vacuum pump via a connecting pipe.

[0016] Preferably, a partition plate is arranged between the two groups of the lifting assemblies, and the partition plate is fixedly connected between the diamond growth furnace body and the middle pipe, wherein two groups of the second springs are fixedly connected to the upper surface of the second exhaust head, and the other two groups of the second springs are fixedly connected to the upper surface of the partition plate, and the opening of the first pipe close to the diamond growth furnace body is located above the partition plate, and the opening of the second pipe close to the diamond growth furnace body is located below one of the movable slides.

[0017] Preferably, both sides of the movable slide plate are fixedly connected with sliders, four strip grooves are provided inside the diamond growth furnace body, and one end of the slider is arranged inside the strip groove and slidably cooperates therewith.

[0018] Preferably, two gas-uniform holes are arranged on the outside of the middle pipe, and the gas-uniform holes are equidistantly distributed in a circular manner on the outside of the middle pipe. The gas in the middle pipe enters the first exhaust head and the second exhaust head respectively after being uniformly gasified through the gas-uniform holes.

[0019] The data of the temperature sensor is acquired by the temperature control module, which includes a temperature control module and a self-test module. The data between the temperature control module and the self-test module can be output and input in a positive and negative feedback mode. The output end of the temperature control module is connected to the actuator and the temperature sensor. The output end of the temperature sensor is connected to the temperature control module. The actuator is used as a power component to perform motion control. A position sensor for monitoring the position is installed at the actuator;

[0020] The temperature control module includes a temperature control processor, a data storage module and a wireless transmission module. The data transmission between the wireless transmission module and the data storage module and the wireless transmission module can be input and output in a positive and negative feedback mode.

[0021] The self-check module includes a cache comparison module, erroneous data, standard value and deletion;

[0022] The cache comparison module is connected to the temperature control processor and the data storage module and receives instructions from the temperature control processor and data information from the data storage module. The cache comparison module compares the obtained data with the standard value multiple times, deletes the generated erroneous data, and the standard value data is pre-entered into the data storage module.

[0023] Compared with the prior art, the beneficial effects of the present invention are as follows: by setting the first exhaust head and the second exhaust head, the reaction gas can be fully compressed and mixed in the diamond growth furnace body by changing the channel through which the gas enters the diamond growth furnace body through the adjusting component, and then the first gas outlet and the second gas outlet are alternately sealed by the alternating lifting and lowering of the lifting component, so that the fully mixed reaction gas can be further homogenized through the annular evenly distributed gas holes, and then enter the first exhaust head and the second exhaust head respectively through two branches, and the gas is finally discharged in corresponding directions through the gas holes located in the recessed part of the second exhaust head and the gas holes arranged on the outer surface of the first exhaust head, which not only achieves further mixing of the reaction gas, but also enables the gas to be evenly laid layer by layer, so that the reaction gas can react evenly and fully with the graphite. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0025] Figure 2 It is a schematic diagram of the structure of the intermediate pipeline of the present invention;

[0026] Figure 3 It is a schematic diagram of the structure of the vacuum pump of the present invention;

[0027] Figure 4 It is a structural schematic diagram of the pull rod of the present invention;

[0028] Figure 5 For the present invention Figure 4 A magnified view of the structure of part A;

[0029] Figure 6 For the present invention Figure 4 A magnified view of the structure of part B;

[0030] Figure 7 It is a structural schematic diagram of the movable slide plate of the present invention;

[0031] Figure 8 is a schematic structural diagram of the first spring of the present invention;

[0032] Fig. 9 This is a schematic diagram of the structure of the first air outlet on the side of the present invention;

[0033] Fig.10 It is a structural schematic diagram of the slider of the present invention;

[0034] Fig.11 It is a structural schematic diagram of the bump of the present invention;

[0035] Fig.12 This is a schematic diagram of the temperature control module flow of the present invention;

[0036] Fig.13 This is a schematic diagram of the self-check module flow of the present invention;

[0037] Fig.14 It is a structural schematic diagram of the hollow pedestal of the present invention;

[0038] Fig.15 It is a structural schematic diagram of the master electric cylinder of the present invention;

[0039] Fig.16 It is a structural schematic diagram of the limiting rod of the present invention.

[0040] In the figure: 1, diamond growth furnace body; 2, middle pipe; 3, first exhaust head; 4, second exhaust head; 5, moving slide plate; 6, bump; 7, first spring; 8, second spring; 9, pull rod; 10, sealing block; 11, first pipe; 12, second pipe; 13, groove; 14, slider; 15, spacer; 16, temperature sensor; 17, deposition table; 1701, hollow base; 1702, table; 1703, limit rod; 1704, rotating connection seat; 1705, short spring; 18, vacuum pump; 19, microwave generator emitter; 20, first air outlet; 21, air uniformity hole; 22, second air outlet; 801, temperature control module; 8011, temperature control processor; 8012, data storage module; 8013, wireless transmission module; 802, self-check module; 8021, cache comparison module; 8022, incorrect data; 8023, standard value; 8024, delete; 803, actuator; 804, position sensor; 8031, main electric cylinder; 8032, auxiliary electric cylinder; 8033, protrusion; 8034, connecting rod; 8035, ball joint connector. DETAILED DESCRIPTION

[0041] The embodiment of the present invention provides an MPCVD diamond growth device with a seed crystal temperature self-detection function.

[0042] See also Figure 1 - Figure 4 As shown, it includes a diamond growth furnace body 1 and an air inlet pipe installed on one side of the diamond growth furnace body 1 and connected to the diamond growth furnace body 1. During implementation, reaction gas can be introduced into the diamond growth furnace body 1 through the air inlet pipe, so that the reaction gas reacts with graphite to produce diamond.

[0043] Furthermore, a microwave transmitter 19 is connected to one side of the diamond growth furnace body 1 through a waveguide tube to facilitate the introduction of microwaves into the interior of the diamond growth furnace body 1. A vacuum pump 18 is connected to the other side of the diamond growth furnace body 1 through a connecting pipe to facilitate the vacuum operation of the interior of the diamond growth furnace body 1. A deposition table 17 for reaction is arranged on the bottom surface of the interior of the diamond growth furnace body 1. The deposition table 17 of the present technology adopts a high thermal resistance hollow substrate workbench to increase the contact area between graphite and the reaction gas, and increases the deposition quality between the reaction gas and graphite, so that the graphite and the reaction gas can fully react. A temperature sensor 16 for detecting the reaction temperature in the diamond growth furnace body 1 is installed on the inner wall of the diamond growth furnace body 1, so as to facilitate self-inspection of the reaction temperature inside the diamond growth furnace body 1, and then transmit the signal to the main control console, and issue an instruction to adjust the temperature in the diamond growth furnace body 1 through the main control console.

[0044] In a specific operation process, a first exhaust hole and a second exhaust hole are set in the bottom plate, and the first exhaust hole and the second exhaust hole are alternately sealed so that the reaction gas is fully mixed and then alternately discharged from the bottom of the bottom plate, and finally passes through the gas equalizing plate to react with the graphite. However, there are certain problems in actual use. For example, in the process of alternately sealing the first exhaust hole and the second exhaust hole, the flow rate of the gas discharged from the first exhaust hole decreases during the sealing process of the first exhaust hole. At this time, the second exhaust hole will slowly open, and the flow rate of the gas discharged from the second exhaust hole will increase, so that the volume of the gas discharged from the first exhaust hole and the second exhaust hole is different, resulting in uneven gas distribution. Since the first exhaust hole and the second exhaust hole are not evenly distributed, the gas reaching the gas equalizing plate becomes more uneven at the moment when the first exhaust hole and the second exhaust hole are alternately sealed, and the gas passing through the gas equalizing plate is not uniform enough, which affects the effect of the reaction gas reacting with the graphite surface. Therefore, in the present solution, an intermediate pipe 2 is fixedly connected to the inner top surface of the diamond growth furnace body 1, a first gas outlet 20 and a second gas outlet 22 are provided on the outer side of the intermediate pipe 2, and lifting components are provided at the positions of the first gas outlet 20 and the second gas outlet 22. When in use, the first gas outlet 20 and the second gas outlet 22 can be alternately sealed by alternately lifting and lowering the two groups of lifting components, so that the reaction gas can be compressed and the gas can be better mixed.

[0045] Furthermore, a first exhaust head 3 and a second exhaust head 4 are fixedly connected to the outside of the intermediate pipe 2, and the second exhaust head 4 is arranged on the outside of the first exhaust head 3. Air holes are arranged on one side wall of the first exhaust head 3 and the second exhaust head 4, and the air holes of the first exhaust head 3 and the second exhaust head 4 are opposite to each other. Specifically, the lifting component located at the top rises, so that the first air outlet 20 is opened and the second air outlet 22 is sealed. When the lifting component located at the bottom rises, the first air outlet 20 is sealed and the second air outlet 22 is opened. No matter whether the first air outlet 20 or the second air outlet 22 is opened, the reaction gas can enter the intermediate pipe 2 through the first air outlet 20. The reaction gas finally introduced into the intermediate pipe 2 is ejected relatively through the air holes of the first exhaust head 3 and the second exhaust head 4, so that the gas is further mixed and evenly moved downward to react with the graphite.

[0046] Please refer again Figure 1 - Fig.11The lifting assembly includes two moving slides 5 that are sealed and slide on the outside of the middle pipe 2. The side of the moving slide 5 close to the first exhaust head 3 is recessed inward. Two sets of second springs 8 are fixedly connected to the bottom of the moving slide 5. Both side walls inside the moving slide 5 are slidably connected with protrusions 6. The side of the protrusion 6 close to the inner wall of the diamond growth furnace body 1 is fixedly connected with the first spring 7. Grooves 13 are provided on both sides of the inner wall of the diamond growth furnace body 1. One end of the protrusion 6 is arranged inside the groove 13 and slidably cooperates with it. The first spring 7 is arranged inside the groove 13 and fixed to the inner wall of the diamond growth furnace body 1.

[0047] The top of one of the lifting assemblies is matched with an adjusting assembly, which includes a pull rod 9 fixedly connected to the top of one of the moving slides 5. The pull rod 9 passes through the diamond growth furnace body 1 and is slidably connected to the diamond growth furnace body 1. A sealing block 10 is fixedly connected to the bottom of the pull rod 9. The pull rod 9 extends into the air inlet pipe and is slidably connected to the air inlet pipe.

[0048] In actual use, the reaction gas is firstly introduced into the diamond growth furnace body 1 through the air inlet pipe. The air inlet pipe includes two parts, a first pipe 11 and a second pipe 12. The first pipe 11 and the second pipe 12 are connected and combined to form a U shape. The first pipe 11 and the second pipe 12 can be alternately sealed by lifting the sealing block 10. In the initial state, the bottom surface of the sealing block 10 contacts the inner bottom surface of the second pipe 12, so that the second pipe 12 is in a sealed state, and the first pipe 11 is in an open state. A partition plate 15 is arranged between the two lifting components. The partition plate 15 is fixedly connected between the diamond growth furnace body 1 and the intermediate pipe 2. Since the first pipe 11 is close to the diamond The opening of the diamond growth furnace body 1 is located above the partition plate 15. At this time, the reaction gas can be introduced between the partition plate 15 and the movable slide plate 5 located above. As the gas is continuously introduced, the gas between the partition plate 15 and the movable slide plate 5 is compressed, so that the reaction gas can be fully mixed. When the introduced gas is compressed to a critical point, the protrusions 6 arranged on both sides of the movable slide plate 5 can be pushed to overcome the force of the first spring 7 and move toward the inner wall of the diamond growth furnace body 1, so that the protrusions 6 and the movable slide plate 5 are separated. The two groups of second springs 8 are fixedly connected to the upper surface of the partition plate 15. At this moment, the movable slide plate 5 overcomes the force of the second spring 8 under the pressure of the reaction gas and moves upward;

[0049] Slide blocks 14 are fixedly connected to both sides of the moving slide plate 5. Four strip grooves are provided inside the diamond growth furnace body 1. One end of the slide block 14 is arranged inside the strip groove and slides with the strip groove to increase the stability of the moving slide plate 5. The moving slide plate 5 moves upward so that the first gas outlet 20 is opened. The reaction gas located above the partition plate 15 and between the moving slide plate 5 is compressed into the middle pipe 2 through the first gas outlet 20. Two uniform gas holes 21 are arranged on the outside of the middle pipe 2. The uniform gas holes 21 are equidistantly distributed on the outside of the middle pipe 2 in an annular manner. The gas in the middle pipe 2 is compressed into the middle pipe 2 through the uniform gas outlet 20. After further homogenization, the holes 21 enter the first exhaust head 3 and the second exhaust head 4 respectively. The second exhaust head 4 is concave upward on one side close to the deposition platform 17, and the pores are distributed in a ring shape at the concave part of the second exhaust head 4. The cross-sectional shape of the first exhaust head 3 is set to be a circular ring, and the pores are distributed in a ring shape on the outer surface of the first exhaust head 3, so that the gas entering the first exhaust head 3 and the second exhaust head 4 can be ejected from the pores relatively, which not only achieves further mixing of the reaction gas, but also enables the gas to be evenly laid layer by layer, so that the reaction gas can react evenly and fully with the graphite;

[0050] During the upward movement of the upper movable slide plate 5, the pull rod 9 can be driven to move upward. The upward movement of the pull rod 9 drives the sealing block 10 to move upward. At this moment, the upper surface of the sealing block 10 is in contact with the inner top surface of the first pipe 11, and the second pipe 12 is opened. At this moment, the reaction gas above the partition plate 15 is still discharged into the intermediate pipe 2 through the first outlet hole 20. The second pipe 12 is close to the opening of the diamond growth furnace body 1 and below one of the movable slide plates 5. The working principle is the same as above. The reaction gas is discharged into between the second exhaust head 4 and the movable slide plate 5 below through the second pipe 12. Two groups of second springs 8 are fixedly connected to the upper surface of the second exhaust head 4, so that the movable slide plate 5 can overcome the force of the second spring 8 and move upward, so that the second outlet hole 22 is opened. When the second outlet hole 22 is fully opened, the gas pressure above the partition plate 15 is reduced, so that the movable slide plate 5 is subjected to the force of the second spring 8 located below the movable slide plate 5, and drives the movable slide plate 5 located above to move downward.

[0051] At the same time, since one side of the protrusion 6 is set as an arc surface, when the movable slide plate 5 moves downward, the protrusion 6 is squeezed to overcome the force of the first spring 7 and moves toward the inner wall of the diamond growth furnace body 1. As the movable slide plate 5 moves, when the protrusion 6 is aligned with the card slots set on both sides of the movable slide plate 5, the protrusion 6 can be inserted into the card slot, so that the movable slide plate 5 and the protrusion 6 are fixed together, so that the first air outlet 20 is completely sealed, and the gas between the movable slide plate 5 and the second exhaust head 4 is evenly ejected through the first exhaust head 3 and the second exhaust head 4;

[0052] In summary, by setting the first exhaust head 3 and the second exhaust head 4, the reaction gas can be fully compressed and mixed in the diamond growth furnace body 1 by changing the channel through which the gas enters the diamond growth furnace body 1 through the adjusting component, and then the first gas outlet 20 and the second gas outlet 22 are alternately sealed by the alternating lifting and lowering of the lifting component, so that the fully mixed reaction gas can be further homogenized through the annular evenly distributed gas holes 21, and then enter the first exhaust head 3 and the second exhaust head 4 respectively through two branches, and the gas is finally discharged in corresponding directions through the gas holes located in the recessed part of the second exhaust head 4 and the gas holes arranged on the outer surface of the first exhaust head 3, which not only achieves further mixing of the reaction gas, but also enables the gas to be evenly laid layer by layer, so that the reaction gas can react evenly and fully with the graphite.

[0053] For details, please participate Fig.14 , Fig.15 and Fig.16 The deposition table 17 includes a hollow pedestal 1701 and a table 1702. The table 1702 is arranged at the top opening of the hollow pedestal 1701. An actuator 803 is arranged inside the hollow pedestal 1701. The bottom of the actuator 803 is rotatably connected to the hollow pedestal 1701 through a bearing. The actuator 803 includes a main electric cylinder 8031. At least two auxiliary electric cylinders 8032 are installed at the output end of the main electric cylinder 8031. The output end of the auxiliary electric cylinder 8032 is provided with an arc-shaped protruding portion 8033. The protruding portion 8033 is provided with an embedding groove. A connecting rod 8034 is fixedly connected to the center of the output end of the main electric cylinder 8031. A ball joint connecting seat 8035 is connected to the end of the connecting rod 8034. The ball joint connecting seat 8035 is installed at the bottom of the table 1702.

[0054] At least two groups of limiting components are fixed to the table 1702 , and the limiting components include a rotating connection seat 1704 , on which a limiting rod 1703 is movably hingedly installed, and the limiting rod 1703 is fixedly connected to a short spring 1705 on the side facing the table 1702 .

[0055] By setting the table 1702, the table 1702 is embedded in the top opening of the hollow base 1701. When the direction of the table 1702 needs to be adjusted to facilitate the generation of materials above, the actuator 803 can be controlled. The main electric cylinder 8031 ​​is the electrical component that mainly increases the height. When the height of the main electric cylinder 8031 ​​is adjusted, the table 1702 and the auxiliary electric cylinder 8032 are connected by the connecting rod 8034. The height of the table 1702 will follow the extension and contraction of the main electric cylinder 8031. It changes to adapt to the appropriate height, obtains better temperature transfer, and flexibly adjusts its relative height, which is beneficial to the growth and generation of seed crystals. Furthermore, by arranging multiple auxiliary electric cylinders 8032 on the main electric cylinder 8031, the auxiliary electric cylinders 8032 are mainly used to push the table 1702 to deflect at an angle. When the auxiliary electric cylinder 8032 is extended, due to its pushing effect on the table 1702, the table 1702 can deflect at an angle to adapt to a better temperature radiation angle and promote the growth of seed crystals.

[0056] Furthermore, by setting multiple groups of limiting components at the bottom of the table 1702, the limit rod 1703 is set to be arc-shaped, so that both ends of the limit rod can be inserted into the embedding groove opened on the protrusion 8033. When the relative position of the seed crystal on the table 1702 needs to be rotated, the rotation position of the actuator 803 can be directly adjusted, and the limit rod 1703 can be driven by any place inserted into the embedding groove. The limit rod 1703 is set to be arc-shaped, and a short spring 1705 is installed, so that the end of the limit rod 1703 can be inserted into the embedding groove more smoothly. The above design can achieve adaptive adjustment in angle deflection and relative rotation direction, so that the seed crystal can get a better temperature environment and grow better.

[0057] In addition, please continue to read Fig.12 and Fig.13 The data of the temperature sensor 16 is obtained by the temperature control module. The temperature control module includes a temperature control module 801 and a self-test module 802. The data between the temperature control module 801 and the self-test module 802 can be output and input in a positive and negative feedback mode. The output end of the temperature control module 801 is connected to the actuator 803 and the temperature sensor 16. The output end of the temperature sensor 16 is connected to the temperature control module 801. The actuator 803 is used as a power component to control the action. A position sensor 804 for monitoring the position is installed at the actuator 803; the temperature control module 801 includes a temperature control processor 8011, a data storage module 8012 and a wireless transmission module 8013. The data transmission between the wireless transmission module 8013 and the data storage module 8012 and the wireless transmission module 8013 can be input and output in a positive and negative feedback mode.

[0058] The self-check module 802 includes a cache comparison module 8021, erroneous data 8022, a standard value 8023 and deletion 8024; the cache comparison module 8021 is connected to the temperature control processor 8011 and the data storage module 8012 and receives instructions from the temperature control processor 8011 and data information from the data storage module 8012. The cache comparison module 8021 compares the obtained data with the standard value 8023 multiple times, deletes 8024 the generated erroneous data 8022, and the data of the standard value 8023 is pre-entered into the data storage module 8012.

[0059] Specifically, the temperature sensor 16 is used to monitor the temperature during the growth of the seed crystal, and transmit the temperature data to the temperature control module 801 in real time. The temperature control module 801 makes control feedback according to the temperature required for the growth of the seed crystal and the data obtained by the temperature sensor 16. The temperature control module 801 can control the actuator 803 to take action. The actuator 803 of this design can be a power element for adjusting the angle and position of the seed crystal rod and the temperature control plate, such as a rotatable and deflectable structure (this design can be flexibly selected and modified). At the same time, in order to ensure that the seed crystal can obtain a relatively good temperature range, a position sensor 804 is used to detect the actuator 803 (actually the position of the seed crystal rod or the temperature control plate, which is determined according to the components used in the specific scenario), and the obtained position data is transmitted to the temperature control module 801, so that the temperature control module 801 can be adjusted in real time according to the feedback temperature and the position of the seed crystal relative to the temperature control component, so that the growth of the seed crystal can obtain the most suitable temperature environment, and the seed crystal growth effect is better.

[0060] In addition, when data is transmitted, the wireless transmission module 8013 is used in a wireless manner, and data transmission can be performed in the form of Bluetooth or local area network to ensure the stability of data transmission between the temperature control processor 8011 and the data storage module 8012. The data storage module 8012 has preset positions and temperature data. The real-time data of the temperature sensor 16 obtained by the temperature control module 801 is stored in the data storage module 8012 through the temperature control processor 8011 and the wireless transmission module 8013. The real-time data is subjected to the standard value 8023 operation through the cache comparison module 8021 to ensure that the erroneous data 8022 in the real-time data is cleared after comparison, so as to avoid the large error data affecting the temperature control module 801 to make correct regulation and realize the temperature self-check function. This operation will ensure the temperature stability of the seed crystal during the growth process, and avoid the temperature changes caused by data errors, so as to improve the yield rate of seed crystal molding.

[0061] Working principle: In the initial state, the bottom surface of the sealing block 10 contacts the bottom surface of the second pipe 12, so that the second pipe 12 is in a sealed state, and the first pipe 11 is in an open state, and the reaction gas is introduced between the partition plate 15 and the movable slide plate 5 located above. As the gas is continuously introduced, the gas between the partition plate 15 and the movable slide plate 5 is compressed, so that the reaction gas can be fully mixed. When the introduced gas is compressed to the critical point, the protrusions 6 arranged on both sides of the movable slide plate 5 can be pushed to overcome the force of the first spring 7 and move toward the inner wall of the diamond growth furnace body 1, so that the protrusions 6 and the movable slide plate 5 are separated;

[0062] The reaction gas located above the partition plate 15 and between the movable slide plate 5 is compressed into the intermediate pipe 2 through the first gas outlet 20, and the gas in the intermediate pipe 2 is further uniformed through the uniform gas holes 21 and then enters the first exhaust head 3 and the second exhaust head 4 respectively, so that the gas entering the first exhaust head 3 and the second exhaust head 4 can be ejected from the gas holes relative to each other;

[0063] During the upward movement of the upper movable slide plate 5, the upper surface of the sealing block 10 is fitted with the inner top surface of the first pipe 11, and the reaction gas is discharged into between the second exhaust head 4 and the lower movable slide plate 5 through the second pipe 12, so that the movable slide plate 5 can overcome the force of the second spring 8 and move upward, so that the second gas outlet 22 is opened. When the second gas outlet 22 is fully opened, the gas pressure above the partition plate 15 is reduced, so that the movable slide plate 5 is driven by the force of the second spring 8 located below the movable slide plate 5 to move downward;

[0064] One side of the protrusion 6 is set to an arc surface, so that when the movable slide plate 5 moves downward, the protrusion 6 is squeezed to overcome the force of the first spring 7 and move toward the inner wall of the diamond growth furnace body 1. As the movable slide plate 5 moves, when the protrusion 6 is aligned with the slots set on both sides of the movable slide plate 5, the protrusion 6 can be inserted into the slots, so that the movable slide plate 5 and the protrusion 6 are fixed together, so that the first air outlet 20 is completely sealed, and the gas between the movable slide plate 5 and the second exhaust head 4 is evenly ejected through the first exhaust head 3 and the second exhaust head 4.

[0065] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. An mpcvd diamond growth device with a seed crystal temperature self-detection function, comprising a diamond growth furnace body (1) and an air inlet pipe installed on one side of the diamond growth furnace body (1) and connected to the diamond growth furnace body (1), Features: The inner top surface of the diamond growth furnace body (1) is fixedly connected to an intermediate pipe (2), the outer side of the intermediate pipe (2) is fixedly connected to a first exhaust head (3) and a second exhaust head (4), the outer side of the intermediate pipe (2) is provided with a first outlet hole (20) and a second outlet hole (22), and a lifting assembly is provided at the positions of the first outlet hole (20) and the second outlet hole (22), and the lifting assembly comprises two movable slide plates (5) which are sealed and slide on the outer side of the intermediate pipe (2); The movable slide plate (5) is recessed inwardly on a side close to the first exhaust head (3); two groups of second springs (8) are fixedly connected to the bottom of the movable slide plate (5); both side walls inside the movable slide plate (5) are slidably connected to protrusions (6); one side of the protrusion (6) is arranged as an arc surface; the protrusion (6) is fixedly connected to a first spring (7) on a side close to the inner wall of the diamond growth furnace body (1); grooves (13) are provided on both sides of the inner wall of the diamond growth furnace body (1); one end of the protrusion (6) is arranged inside the groove (13) and slidably cooperates with the groove; the first spring (7) is arranged inside the groove (13) and is fixed to the inner wall of the diamond growth furnace body (1); The top of one of the lifting assemblies is matched with an adjustment assembly, the adjustment assembly comprising a pull rod (9) fixedly connected to the top of one of the moving slides (5), the pull rod (9) passing through the diamond growth furnace body (1) and being slidably connected to the diamond growth furnace body (1), the bottom of the pull rod (9) being fixedly connected to a sealing block (10), the pull rod (9) extending into the air intake pipe and being slidably connected to the air intake pipe, the air intake pipe comprising a first pipe (11) and a second pipe (12), the first pipe (11) and the second pipe (12) being connected and combined to form a U shape, the first pipe (11) and the second pipe (12) being able to be alternately sealed by lifting and lowering the sealing block (10); A partition plate (15) is provided between the two groups of the lifting assemblies, and the partition plate (15) is fixedly connected between the diamond growth furnace body (1) and the intermediate pipe (2), wherein two groups of the second springs (8) are fixedly connected to the upper surface of the second exhaust head (4), and the other two groups of the second springs (8) are fixedly connected to the upper surface of the partition plate (15), the first pipe (11) is located above the partition plate (15) near the opening of the diamond growth furnace body (1), and the second pipe (12) is located below one of the movable slides (5) near the opening of the diamond growth furnace body (1); The bottom surface of the diamond growth furnace body (1) is provided with a deposition table (17) for reaction, the inner wall of the diamond growth furnace body (1) is provided with a temperature sensor (16) for detecting the reaction temperature in the diamond growth furnace body (1), the second exhaust head (4) is recessed upward on one side close to the deposition table (17), the air holes are distributed in a circular shape and at equal intervals at the recessed part of the second exhaust head (4), the cross-sectional shape of the first exhaust head (3) is set to be a circular ring, and the air holes are distributed in a circular shape and at equal intervals at the outer surface of the first exhaust head (3); The deposition platform (17) comprises a hollow pedestal (1701) and a tabletop (1702), wherein the tabletop (1702) is arranged at the top opening of the hollow pedestal (1701), an actuator (803) is arranged inside the hollow pedestal (1701), the bottom of the actuator (803) is rotatably connected to the hollow pedestal (1701) via a bearing, and the actuator (803) comprises a main electric cylinder (8031), wherein the output end of the main electric cylinder (8031) is provided with a At least two auxiliary electric cylinders (8032) are installed, the output end of the auxiliary electric cylinder (8032) is provided with an arc-shaped protruding portion (8033), the protruding portion (8033) is provided with an embedding groove, the center of the output end of the main electric cylinder (8031) is fixedly connected with a connecting rod (8034), the end of the connecting rod (8034) is connected with a ball joint connecting seat (8035), and the ball joint connecting seat (8035) is installed at the bottom of the table (1702); At least two groups of limiting components are fixed to the table top (1702), and the limiting components include a rotating connection seat (1704), a limiting rod (1703) is movably hingedly installed on the rotating connection seat (1704), and a short spring (1705) is fixedly connected to the limiting rod (1703) on the side facing the table top (1702).

2. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 1, Features: The second exhaust head (4) is arranged outside the first exhaust head (3); one side wall of the first exhaust head (3) and the second exhaust head (4) is provided with air holes, and the air holes of the first exhaust head (3) and the second exhaust head (4) are opposite to each other. By alternately lifting and lowering the two sets of lifting components, the first air outlet hole (20) and the second air outlet hole (22) can be alternately sealed, so that the reaction gas is introduced into the intermediate pipe (2) and ejected through the first exhaust head (3) and the second exhaust head (4).

3. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 1, Features: One side of the diamond growth furnace body (1) is connected to a microwave transmitter (19) via a waveguide tube, and the other side of the diamond growth furnace body (1) is connected to a vacuum pump (18) via a connecting pipe.

4. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 2, Features: Slide blocks (14) are fixedly connected to both sides of the movable slide plate (5); four strip grooves are provided inside the diamond growth furnace body (1); one end of the slide block (14) is arranged inside the strip groove and slidably cooperates with the strip groove.

5. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 4, Features: Two gas-uniform holes (21) are arranged on the outside of the middle pipe (2), and the gas-uniform holes (21) are equidistantly distributed in an annular manner on the outside of the middle pipe (2). The gas in the middle pipe (2) enters the first exhaust head (3) and the second exhaust head (4) respectively after being uniformly gasified through the gas-uniform holes (21).

6. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 5, Features: The data of the temperature sensor (16) is acquired by the temperature control module, the temperature control module comprises a temperature control module (801) and a self-test module (802), the data between the temperature control module (801) and the self-test module (802) can be output and input in a positive and negative feedback mode, the output end of the temperature control module (801) is connected to the actuator (803) and the temperature sensor (16), the output end of the temperature sensor (16) is connected to the temperature control module (801), the actuator (803) is used as a power component to perform motion control, and a position sensor (804) for monitoring the position is installed at the actuator (803); The temperature control module (801) comprises a temperature control processor (8011), a data storage module (8012) and a wireless transmission module (8013); data transmission between the wireless transmission module (8013) and the data storage module (8012) and the wireless transmission module (8013) can be input and output in a positive and negative feedback mode.

7. The MPCvd diamond growth device with a seed crystal temperature self-checking function according to claim 6, Features: The self-check module (802) includes a cache comparison module (8021), erroneous data (8022), a standard value (8023) and deletion (8024); The cache comparison module (8021) is connected to the temperature control processor (8011) and the data storage module (8012) and receives instructions from the temperature control processor (8011) and data information from the data storage module (8012). The cache comparison module (8021) compares the acquired data with the standard value (8023) for multiple times, deletes (8024) the generated erroneous data (8022), and the data of the standard value (8023) is pre-entered into the data storage module (8012).

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