On-chip integrated optical beam deflector based on phase change material and metasurface

Abstract

The application discloses an on-chip integrated light beam deflector based on a phase change material and a metasurface, and belongs to the light beam deflector field. After incident light is incident on the chip, the incident light passes through a silicon waveguide array, a voltage is applied to a phase change material layer through a pixel electrode layer, the refractive index of the phase change material between different pixels is different, the phase change material and a light outcoupling structure of the metasurface are coupled to perform pixelization modulation on light, and then light beam deflection in a direction perpendicular to the silicon waveguide array is realized. The emergent light is finally transmitted through a light-transmitting cladding and emitted to outside the chip. The application can effectively improve the dimension of light field regulation and control of an existing metasurface device or system.

Description

Technical Field

[0001] This invention relates to the field of beam deflector technology, and in particular to an on-chip integrated beam deflector based on phase change materials and metasurfaces. Background Technology

[0002] A beam deflector is a device used to change the propagation direction or angle of a laser beam. Currently, there are various technologies for achieving laser deflection, including liquid crystal spatial light modulators, microelectromechanical systems (MEMS) based beam deflectors, and reflective beam deflectors and refractive beam deflectors based on integrated optics technology.

[0003] Traditional liquid crystal spatial light modulators utilize the optical properties of liquid crystal materials to control the orientation of liquid crystal molecules through an electric field, thereby achieving phase modulation and beam control of laser light waves. However, they suffer from large pixel sizes, limited phase modulation range, and crosstalk between pixels. Typical commercial transmissive liquid crystal spatial modulators have large pixel pitches and small maximum field of view, severely limiting their potential applications.

[0004] Microelectromechanical systems (MEMS) technology enables precise control and adjustment of light beams through miniaturized mechanical devices. MEMS-based beam deflection technology typically employs tiny, movable mirrors or micro-drive systems to achieve beam deflection and adjustment. Therefore, MEMS mirrors can achieve high-precision beam deflection within a small space, making them suitable for applications with size constraints. However, MEMS device manufacturing requires precision machining techniques and processes, resulting in high manufacturing costs. Furthermore, these devices are sensitive to environmental factors such as vibration and temperature, leading to relatively poor reliability and stability. The integration of MEMS technology is challenging, and it also places high demands on the compatibility of the control system.

[0005] Integrated optics technology integrates miniaturized optical components such as optical waveguides, gratings, and reflective mirrors onto a single platform. Through complex optical path design and control, it can achieve efficient wavefront modulation and beamforming, and is widely used in fields such as lidar and optical communication. The disadvantages are that the performance of integrated optical devices is affected by manufacturing processes and material properties, and there may be limitations in terms of wavelength range, loss, and transmission efficiency. Furthermore, the fabrication of integrated optical devices requires high-precision micro-nano fabrication technology, resulting in high manufacturing complexity and cost, hindering its widespread adoption in practical applications. Summary of the Invention

[0006] This invention provides an on-chip integrated beam deflector based on phase change materials and metasurfaces, which can effectively enhance the dimensionality of optical field manipulation in existing metasurface devices or systems.

[0007] This invention provides an on-chip integrated beam deflector based on phase change materials and metasurfaces, comprising, from bottom to top: a substrate layer, a lower cladding layer, a pixel electrode layer, a micro / nano structure layer, a phase change material layer, an upper electrode layer, and a light-transmitting cladding layer;

[0008] The lower cladding layer, the light-transmitting cladding layer, and the micro / nano structure layer form a refractive index difference, which confines the light to propagate in the waveguide and metasurface layer.

[0009] The micro / nano structure layer includes a silicon waveguide array and a metasurface coupled light-emitting structure, and the pixel electrode layer is disposed below the metasurface coupled light-emitting structure.

[0010] The cladding window is opened on the region of the metasurface coupled light-emitting structure, and the phase change material is disposed in the gap between the metasurface coupled light-emitting structure and the light-transmitting cladding, as well as in the gap between the metasurface coupled light-emitting structures, so that the metasurface coupled light-emitting structure is in direct contact with the phase change material layer and encapsulates the metasurface coupled light-emitting structure.

[0011] The pixel electrode layer and the upper electrode layer form a pixelated electric field, which modulates the optical properties of the phase change material layer.

[0012] After incident light enters the chip and passes through the silicon waveguide array, a voltage is applied to the phase change material layer through the pixel electrode layer, causing the refractive index of the phase change material between different pixels to be different. This causes the phase change material to couple with the metasurface to the light-emitting structure, which performs pixel-based modulation of the light, thereby deflecting the light beam in the direction perpendicular to the silicon waveguide array. The emitted light finally passes through the light-transmitting cladding and exits outside the chip.

[0013] In one embodiment of the present invention, the base layer is a substrate or a CMOS backplane.

[0014] In one embodiment of the present invention, the silicon waveguide array includes an integrated optical phased array and a Y-branch waveguide. The phase difference between the waveguide arrays is generated by the integrated optical phased array, so that after the incident light enters the silicon waveguide array in parallel, the phase difference between the silicon waveguide arrays is used to deflect the light beam parallel to the direction of the silicon waveguide array in the light-coupled region on the metasurface.

[0015] In one embodiment of the present invention, when the integrated optical phased array is a Mach-Zehnder interferometer, the phase difference between the two arms of the Mach-Zehnder interferometer is adjusted by electrodes to generate a phase difference between the waveguide arrays;

[0016] When the integrated optical phased array is a ring resonator, the phase difference between waveguide arrays is generated by adjusting the phase on the ring through electrodes.

[0017] In one embodiment of the present invention, the integrated optical phased array achieves the phase difference between waveguide arrays through thermo-optical effect, plasma dispersion, and electro-optical effect.

[0018] In one embodiment of the present invention, the phase change material includes a liquid crystal material, a VO2 material, a GST material, and a lithium niobate material layer. The phase change characteristics of the material are adjusted according to different applied voltages, thereby pixelating and controlling the beam deflection angle of the light-emitting region.

[0019] In one embodiment of the present invention, the basic unit of the metasurface coupled to the light structure is square and cylindrical.

[0020] In one embodiment of the present invention, the metasurface coupled light-emitting structure is a titanium dioxide material.

[0021] In one embodiment of the present invention, the pixel electrode layer is a strip pixel electrode layer, and the size of the strip pixel electrode layer is subwavelength.

[0022] In one embodiment of the present invention, the light-transmitting cladding is ITO glass.

[0023] This invention discloses an on-chip integrated beam deflector based on phase change materials and metasurfaces. After incident light enters the chip and passes through a silicon waveguide array, a voltage is applied to the phase change material layer via the pixel electrode layer. This causes the refractive index of the phase change material to differ between different pixels, resulting in pixelated modulation of the light by the light-emitting structure coupled between the phase change material and the metasurface. This achieves beam deflection perpendicular to the silicon waveguide array, and the emitted light ultimately passes through the light-transmitting cladding and exits the chip. This invention effectively enhances the dimensionality of optical field manipulation in existing metasurface devices or systems.

[0024] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0025] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0026] Figure 1 This is a schematic diagram of an on-chip integrated beam deflector structure based on phase change materials and metasurfaces according to an embodiment of the present invention.

[0027] Figure 2 This is a top view of an on-chip integrated beam deflector structure based on phase change materials and metasurfaces according to an embodiment of the present invention;

[0028] Figure 3This is a side view of an on-chip integrated beam deflector structure based on phase change materials and metasurfaces according to an embodiment of the present invention.

[0029] Figure 4 This is a top view of a multi-input on-chip integrated beam deflector based on phase change materials and metasurfaces according to an embodiment of the present invention.

[0030] Figure 5 This is a light field distribution diagram projected into free space in a single metasurface structure according to an embodiment of the present invention;

[0031] Figure 6 This is an optical field distribution diagram of an on-chip integrated beam deflector based on phase change materials and metasurfaces provided in an embodiment of the present invention.

[0032] Figure reference numerals: 1-Silicon waveguide array; 2-Metasurface coupled light-emitting structure; 3-Windowed region of the cladding layer above the metasurface coupled light-emitting structure region; 4-Micro / nano structure layer; 5-Pixel electrode layer; 6-Lower cladding layer; 7-Substrate layer; 8-Transparent cladding layer; 9-Upper electrode layer; 10-Phase change material layer. Detailed Implementation

[0033] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0034] like Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the on-chip integrated beam deflector based on phase change materials and metasurfaces includes, from bottom to top: a substrate layer, a lower cladding layer, a pixel electrode layer, a micro / nano structure layer, a phase change material layer, an upper electrode layer, and a light-transmitting cladding layer.

[0035] Among them, the lower cladding, the light-transmitting cladding and the micro-nano structure layer form a refractive index difference, which confines the light to propagate in the waveguide and metasurface layer.

[0036] The micro / nano structure layer includes a silicon waveguide array and a metasurface coupled light-emitting structure, with the pixel electrode layer disposed below the metasurface coupled light-emitting structure;

[0037] A window is opened in the cladding of the metasurface coupled light-emitting structure region. The phase change material is placed in the gap between the metasurface coupled light-emitting structure and the light-transmitting cladding, as well as in the gap between the metasurface coupled light-emitting structures, so that the metasurface coupled light-emitting structure is in direct contact with the phase change material layer and encapsulates the metasurface coupled light-emitting structure.

[0038] The pixel electrode layer and the upper electrode layer form a pixelated electric field, which modulates the optical properties of the phase change material layer.

[0039] After incident light enters the chip and passes through the silicon waveguide array, a voltage is applied to the phase change material layer through the pixel electrode layer, so that the refractive index of the phase change material between different pixels is different. This causes the phase change material and the metasurface to couple the light out of the structure, which modulates the light in a pixelated manner, thereby achieving beam deflection in the direction perpendicular to the silicon waveguide array. The outgoing light finally passes through the light-transmitting cladding and exits outside the chip.

[0040] The embodiments of the present invention utilize phase change materials and metasurfaces to generate phase gradients between pixel units, thereby achieving beam deflection parallel to the waveguide direction, which can realize one-dimensional control of the emitted light and is mainly used for beam deflection.

[0041] The deflected light in this embodiment of the invention can be in the visible light band or the near-infrared optical communication band.

[0042] In the embodiments of this application, the base layer may be a substrate or a CMOS backplane.

[0043] It is understandable that by opening a window in the cladding of the region where the optical structure is coupled out of the metasurface, the optical structure coupled out of the metasurface can be in direct contact with the phase change material layer, thereby changing the optical properties of the phase change material layer and thus the optical response of the optical structure coupled out of the metasurface.

[0044] In an embodiment of the present invention, the silicon waveguide array includes an integrated optical phased array and a Y-branch waveguide. The phase difference between the waveguide arrays is generated by the integrated optical phased array, so that after the incident light enters the silicon waveguide array in parallel, the phase difference between the silicon waveguide arrays is used to deflect the light beam in the light-coupled region of the metasurface parallel to the direction of the silicon waveguide array.

[0045] Specifically, the beam array modulated by the integrated optical phased array will propagate to the metasurface emission region, be again modulated by the metasurface pixelation, and then be emitted in the light-transmitting cladding.

[0046] The embodiments of the present invention integrate an optical phased array to generate a phase difference between waveguide arrays, which can realize two-dimensional control of the outgoing light. It can be used for two-dimensional beam deflection and light field scanning, as well as for dynamic holographic imaging.

[0047] Specifically, the integrated optical phased array part is connected to the phase change material and the metasurface light-emitting part by a waveguide.

[0048] In embodiments of the present invention, the integrated optical phased array can be selected from a Mach-Zehnder interferometer, an arrayed waveguide grating, and a ring resonator. When the integrated optical phased array is a Mach-Zehnder interferometer, the phase difference between the two arms of the Mach-Zehnder interferometer is adjusted by electrodes to generate the phase difference between the waveguide arrays; when the integrated optical phased array is a ring resonator, the phase difference between the waveguide arrays is generated by adjusting the phase on the ring by electrodes.

[0049] In embodiments of the present invention, the integrated optical phased array can be realized through principles such as thermo-optical effect, plasma dispersion, and electro-optic effect. Since the waveguide array can be modulated through different modulation mechanisms to form a phase difference between each waveguide, dynamic deflection of the outgoing light can be achieved.

[0050] In embodiments of the present invention, the phase change material includes liquid crystal material, VO2 material, GST material, and lithium niobate material layer. The phase change characteristics of the material are adjusted according to different applied voltages, thereby pixelating and controlling the beam deflection angle of the light-emitting region.

[0051] Combination Figure 1 and Figure 2 As shown, the basic units of the metasurface coupling optical structures are square and cylindrical. Other shapes are also possible, and the shape of each metasurface unit can be the same or different; there are no specific restrictions on this.

[0052] In an embodiment of the present invention, the metasurface-coupled light structure is made of titanium dioxide.

[0053] In an embodiment of the present invention, the pixel electrode layer is a strip-shaped pixel electrode layer. A voltage is applied to the phase change material layer through the pixel electrode layer, causing different pixels in the phase change material layer to have different refractive indices, thus enabling the phase change material and metasurface to perform pixelated modulation of light. The size of the strip-shaped pixel electrode layer is subwavelength, requiring a relatively small driving voltage and reducing inter-pixel crosstalk.

[0054] Furthermore, in specific implementations, the micro / nano structure layer includes a coupled grating structure, a waveguide structure, an integrated modulator, and a metasurface coupled light-emitting structure.

[0055] In embodiments of the present invention, the phase change material layer is located in the gap between the micro / nanostructure layer and the light-transmitting cladding, and also in the gap between multiple micro / nanostructures, thus encapsulating the micro / nanostructures. When no power is applied, the refractive index of the phase change material is n1; when a voltage is applied, the refractive index of the phase change material is n... 2， The refractive index of the phase change material layer varies with voltage, with the refractive index changing between n1 and n2.

[0056] When incident light is incident on the chip, it is modulated by the silicon waveguide array and emitted out of the surface in the light-emitting region coupled by the metasurface. The pixelated electrode is used to adjust the refractive index of the phase change material layer. By changing the modulation of light by the phase change material and the metasurface, a phase gradient is formed, which changes the angle of the emitted light.

[0057] In an embodiment of the present invention, the light-transmitting cladding is ITO glass, which is beneficial for both light beam emission and the formation of an electric field with the pixel electrode below, thereby controlling the change in refractive index of the phase change material layer.

[0058] The on-chip integrated beam deflector based on phase change materials and metasurfaces of the present invention will be described below through two specific embodiments.

[0059] Example 1

[0060] Dynamic modulation is achieved by using liquid crystal as a phase change material layer.

[0061] The metasurface units mentioned in this invention are generally composed of high-refractive-index dielectric materials, such as TiO2, GaN, Si3N4, and Si. In metasurface design, to achieve subwavelength device dimensions and sufficiently high operating efficiency, a fabrication process capable of achieving fine dimensions is required.

[0062] In this embodiment of the invention, a metasurface is prepared using microfabrication processes such as electron beam lithography (EBL). A highly focused electron beam is used to expose the resist, thereby changing its solubility in the subsequent development process. This is combined with a subsequent pattern transfer process to form the designed structure.

[0063] After fabricating the waveguide structure and the metasurface coupled light emission region structure using multi-step processes such as EBL and splicing methods, a local windowing process is needed to etch away the cladding above the metasurface region so that it can directly contact the liquid crystal.

[0064] In an example, liquid crystal encapsulation is performed, with an alignment layer spin-coated onto the light-transmitting cladding.

[0065] First, the glass needs to be ultrasonically cleaned and plasma-treated to prevent dirt from adversely affecting the film quality. Next, an alignment layer is spin-coated onto the cleaned glass substrate using a spin coater.

[0066] After spin coating, alignment and curing steps are required. Pre-baking is necessary to remove solvent from the alignment layer, delamination, and film formation; this process requires baking at 80°C. Next, an ultraviolet light source and photoalignment machine are used to align the alignment layer using a photoalignment method, employing color filters to obtain the desired wavelength of ultraviolet light. Polarization is adjusted to align with the alignment direction, and power and exposure time are adjusted accordingly. Baking at 110°C enhances alignment. Finally, baking at 230°C allows the alignment layer to undergo a cyclization reaction, thus achieving curing. After completing these steps, the substrate fabrication is complete.

[0067] The orientation is achieved through photoorientation.

[0068] Next, sealing adhesive is used to fix the upper and lower substrates together. Spacers are mixed into UV-curable adhesive and stirred thoroughly to control the thickness of the liquid crystal cell, then applied to both sides of the cell. The cell is then exposed to UV light for 100 seconds to cure. Next, on a 40°C hot plate, E7 liquid crystal is dripped into the uncoated sides of the cell through a capillary tube, ensuring complete filling. Finally, the remaining sides are sealed using the same method, completing the liquid crystal cell fabrication.

[0069] This on-chip integrated beam deflector based on a liquid crystal metasurface can be used for holographic displays in the visible light band. In the visible light band, holographic displays can be achieved using this emission platform, where the hologram is encoded on the metasurface's exit surface and, after diffraction, forms an image at the target location.

[0070] Orientation can be achieved using photoorientation methods with wavelengths in the visible light band.

[0071] In this example, end-face coupling is used to couple off-plane light to in-plane light.

[0072] By applying a transverse hologram to an integrated optical phased array, the phase difference between the waveguide arrays allows for beam deflection parallel to the waveguides, such as... Figure 4 As shown, the integrated optical phased array uses a Mach-Zehnder interferometer based on thermo-optical effect modulation as its basic component.

[0073] For liquid crystal materials, whose refractive index is continuously tunable, the phase of the emitted light at the interface between the light-emitting structure coupled to the liquid crystal metasurface and air is continuously tunable within the range of 0-2π. A longitudinal hologram can be applied to the liquid crystal metasurface at the emitting end, such as... Figure 3 As shown.

[0074] In this way, the desired two-dimensional image can be generated at the target position at a certain diffraction distance from the exit end face.

[0075] Example 2

[0076] VO2 is used as a phase change material layer for dynamic control.

[0077] Silicon waveguides and silicon metasurface layers to be etched were prepared using plasma-enhanced chemical vapor deposition (PECVD).

[0078] This invention utilizes focused ion beam etching (FIB) to prepare silicon metasurfaces. Focused ion beams can directly and rapidly process and manufacture subwavelength micro- and nano-planar patterned structures.

[0079] The arrangement of metasurfaces is a regular, periodic arrangement.

[0080] VO2 thin films were prepared by physical vapor deposition and located between the light-transmitting cladding and the metasurface coupled light-emitting structure.

[0081] The optical response of VO2 is modulated by controlling the charge carriers inside VO2 through pixelated electrodes.

[0082] In this example, Al is chosen as the pixel electrode material, and the pixel electrode size is 1 micrometer. A CMOS backplane lies beneath the pixel electrode layer, facilitating pixel-level control of the optical properties of VO2.

[0083] In the 1550nm band, metasurface beam deflectors can be used as lidar. The incident light is coupled into the surface through a coupling grating, and the outgoing light is deflected in two dimensions using a thermo-optical phased array and a pixelated VO2 metasurface to achieve continuous modulation.

[0084] The material for the optical structure coupled from the metasurface can be monocrystalline silicon, polycrystalline silicon, or amorphous silicon, and its shape can be cylindrical, square, etc.

[0085] The wavelength is in the near-infrared band, for example, 1550nm.

[0086] A transverse beam deflection phase is applied to the integrated optical phased array, achieving deflection parallel to the waveguide direction at the beam exit end.

[0087] In this embodiment, the topology composed of multiple Mach-Zehnder interferometers is a y-branch row structure. The phase difference between the waveguide arrays can be adjusted using the thermo-optical effect.

[0088] By utilizing the liquid crystal metasurface at the emission end, a longitudinal beam deflection phase is applied to achieve a phase gradient between pixels, thereby realizing beam deflection perpendicular to the waveguide direction.

[0089] This allows for two-dimensional beam deflection at the exit surface, which can be used in lidar. For example... Figure 5 and Figure 6 As shown.

[0090] According to embodiments of the present invention, an on-chip integrated beam deflector based on phase change materials and metasurfaces is proposed. Incident light, after entering the chip, passes through a silicon waveguide array. A voltage is applied to the phase change material layer through pixel electrode layers, causing the refractive index of the phase change material to differ between different pixels. The phase change material and the metasurface coupling structure modulate the light pixel by pixelation, thereby achieving beam deflection perpendicular to the silicon waveguide array. The emitted light ultimately passes through the light-transmitting cladding and exits the chip. By integrating an optical phased array to generate a phase difference between the waveguide arrays, the incident light enters the silicon waveguide array parallel to it. This phase difference allows for beam deflection parallel to the silicon waveguide array direction in the metasurface coupling region. This invention effectively enhances the dimensionality of optical field manipulation in existing metasurface devices or systems.

[0091] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0092] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

Claims

1. An on-chip integrated beam deflector based on phase change materials and metasurfaces, characterized in that, From bottom to top, it includes: a substrate layer, a lower cladding layer, a pixel electrode layer, a micro / nano structure layer, a phase change material layer, an upper electrode layer, and a light-transmitting cladding layer; The lower cladding layer, the light-transmitting cladding layer, and the micro / nano structure layer form a refractive index difference, which confines the light to propagate in the waveguide and metasurface layer. The micro / nano structure layer includes a silicon waveguide array and a metasurface coupled light-emitting structure, and the pixel electrode layer is disposed below the metasurface coupled light-emitting structure. The cladding window is opened on the region of the metasurface coupled light-emitting structure, and the phase change material is disposed in the gap between the metasurface coupled light-emitting structure and the light-transmitting cladding, as well as in the gap between the metasurface coupled light-emitting structures, so that the metasurface coupled light-emitting structure is in direct contact with the phase change material layer and encapsulates the metasurface coupled light-emitting structure. The pixel electrode layer and the upper electrode layer form a pixelated electric field, which modulates the optical properties of the phase change material layer. After incident light enters the chip and passes through the silicon waveguide array, a voltage is applied to the phase change material layer through the pixel electrode layer, so that the refractive index of the phase change material between different pixels is different. The phase change material and the metasurface couple light-emitting structure to perform pixelated modulation of the light, thereby achieving beam deflection in the direction perpendicular to the silicon waveguide array. The emitted light finally passes through the light-transmitting cladding and exits outside the chip.

2. The on-chip integrated beam deflector according to claim 1, characterized in that, The base layer is a substrate or a CMOS backplane.

3. The on-chip integrated beam deflector according to claim 1, characterized in that, The silicon waveguide array includes an integrated optical phased array and a Y-branch waveguide. The phase difference between the waveguide arrays is generated by the integrated optical phased array, so that after the incident light enters the silicon waveguide array in parallel, the phase difference between the silicon waveguide arrays is used to deflect the light beam parallel to the direction of the silicon waveguide array in the light coupling region on the metasurface.

4. The on-chip integrated beam deflector according to claim 3, characterized in that, When the integrated optical phased array is a Mach-Zehnder interferometer, the phase difference between the two arms of the Mach-Zehnder interferometer is adjusted by electrodes to generate the phase difference between the waveguide arrays. When the integrated optical phased array is a ring resonator, the phase difference between waveguide arrays is generated by adjusting the phase on the ring through electrodes.

5. The on-chip integrated beam deflector according to claim 3, characterized in that, The integrated optical phased array achieves the phase difference between waveguide arrays through thermo-optical effect, plasma dispersion, and electro-optical effect.

6. The on-chip integrated beam deflector according to claim 1, characterized in that, The phase change material includes liquid crystal material, VO2 material, GST material, and lithium niobate material layer. The phase change characteristics of the material are adjusted according to different applied voltages, thereby pixelating and controlling the beam deflection angle of the light-emitting region.

7. The on-chip integrated beam deflector according to claim 1, characterized in that, The basic units of the metasurface coupled light structure are square and cylindrical.

8. The on-chip integrated beam deflector according to claim 1 or 7, characterized in that, The metasurface-coupled light-emitting structure is made of titanium dioxide.

9. The on-chip integrated beam deflector according to claim 1, characterized in that, The pixel electrode layer is a strip-shaped pixel electrode layer, and the size of the strip-shaped pixel electrode layer is subwavelength.

10. The on-chip integrated beam deflector according to claim 1, characterized in that, The light-transmitting cladding is ITO glass.

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