Electronic circuit for high voltage single and bipolar voltage current modulation communication of detonators

Abstract

This invention provides a high-voltage unipolar and bipolar voltage-current modulation communication detonator electronic circuit, belonging to the field of electronic detonators. It solves the problem that existing low-voltage powered electronic detonator chips cannot drive high-voltage plasma exciters. The circuit includes a high-voltage unipolar voltage regulator circuit, a unipolar / bipolar voltage modulation communication detonator electronic chip driver circuit, and a high-voltage plasma exciter trigger circuit. The input terminals of the high-voltage unipolar voltage regulator circuit are connected to the detonator pin terminals LINE-A and LINE-B, respectively. The output terminal of the high-voltage unipolar voltage regulator circuit outputs high-voltage electricity to the high-voltage plasma exciter trigger circuit. The other output terminal of the high-voltage bridge is connected to the unipolar voltage modulation communication detonator electronic chip driver circuit. The unipolar / bipolar voltage modulation communication detonator electronic chip driver circuit outputs a driving signal to the high-voltage plasma exciter trigger circuit. This invention is applied to high-voltage plasma exciter electronic detonators without detonating explosives.

Description

Technical Field

[0001] This invention provides a detonator electronic circuit for high-voltage unipolar and bipolar voltage-current modulation communication, belonging to the field of electronic detonator technology. Background Technology

[0002] Existing domestic and international detonator electronic chips operate at voltages below 25V, use capacitors with energy storage of less than 30mJ, and employ resistance bridge wires as the ignition element for capacitor discharge. Therefore, existing detonator electronic chips cannot directly operate at a high voltage of 100V (far exceeding 25V) to control the charging and discharging of high-voltage capacitors to excite plasma igniters (also known as plasma sparkers), instantly generating plasma shock waves to detonate detonators without initiating explosives.

[0003] Figure 1 The diagram 100 shows the pin interface circuit of an electronic chip for detonators, employing bipolar voltage modulation and current modulation non-return-to-zero (NRZ) code communication. VIN1 and VIN2 are the chip pin interfaces, connecting to the detonator's communication interface. The voltage provided by the detonator's communication interface is typically less than 25V (excessive voltage will burn out the electronic chip). Diodes D1-D4 within the electronic chip form a bridge circuit. The VIN1 and VIN2 interfaces connect to the bridge's input terminals. The bridge's input terminals are also connected in parallel to the input terminal of comparator U1 and the negative terminals of diodes D5 and D6, then connected to the drain (D) and source (S) terminals of an NM transistor, which are connected to ground via resistor R1. The bridge's output terminal connects to an LDO regulator, providing 5V and VDD voltages (less than 25V). The output terminal of comparator U1 connects to a digital process management circuit (detonator circuit). The RXD terminal of the sub-chip internal circuit is connected to the G terminal of the digital process management circuit. When the detonator communication interface sends a voltage modulation signal, it is received by the input terminal of comparator U1 through the pin wires and VIN1 and VIN2 interfaces at the input terminal of the bridge. The communication signal at the output terminal of comparator U1 is received by the RXD terminal of the digital process management circuit, completing the master-slave communication. When the TXD terminal of the digital process management circuit sends a communication logic level, it drives the G terminal of the NM transistor through the Driver circuit, making the D and S terminals of the NM transistor conduct and open. The current flows through the diode to D5 or D6, and according to the voltage drop formed on the resistor R1 by the communication logic level, it is converted into the required IF current modulation signal, which is received by the detonator communication interface through the VIN1 and VIN2 interfaces and the pin wire circuit, completing the slave-master communication.

[0004] Figure 1When the VIN1 and VIN2 interfaces are connected to pins LINE-A and LINE-B, their positive and negative polarities can be interchanged. That is, LINE-A connects to either the positive or negative terminal of the detonator communication interface via one pin, and correspondingly, LINE-B connects to either the negative or positive terminal of the detonator communication interface via the other pin. When the detonator communication interface is connected to LINE-A and LINE-B, the amplitude of the positive and negative voltages and the VF voltage modulation signal provided is less than 25V. The bipolar voltage modulation signal refers to the VF voltage modulation signal input to LINE-A and LINE-B, which can be an interchangeable bipolar connection with LINE-A as positive and LINE-B as negative, or vice versa. In this case, the input of comparator U1 is directly connected to the VIN1 and VIN2 interfaces to receive the bipolar VF voltage modulation signal.

[0005] Figure 2 The detonator electronic chip uses unipolar voltage modulation and current modulation non-return-to-zero code communication. The pin interface circuit diagram is shown in Figure 200. The difference between the detonator electronic chip and bipolar voltage modulation lies in the following: Bipolar voltage modulation obtains the VF voltage modulation signal at the input of the bridge circuit composed of diodes D1-D4 within the electronic chip, and converts it into an output RDX digital logic signal by the reference voltage and polarity at the input of the comparator; while the electronic chip uses unipolar VF voltage modulation, obtaining the unipolar VF voltage modulation signal at the output of the bridge circuit composed of diodes D1-D4 within the electronic chip, and converting it into an output RDX digital logic signal by the resistors R2-R... 3. The conversion circuit composed of NM1 transistors outputs the RDX digital logic signal from the drain of NM1 transistor, which is received by the RXD terminal of the digital process management circuit to complete the master-slave voltage modulation communication. The TDX digital logic signal issued by the TDX terminal of the digital process management circuit in the electronic chip drives the gate of NM2 transistor through the driver circuit, so that the drain and source terminals of NM2 transistor are turned on and off. According to the voltage drop formed on the resistor R1 according to the communication logic level, it is converted into the required IF current modulation signal, which is received by the detonator communication interface through the BUS1 and BUS2 interfaces and the pin circuit of the D1-D4 bridge to complete the slave-master communication. Summary of the Invention

[0006] To address the problem that existing low-voltage powered electronic detonator chips cannot drive high-voltage plasma excitation devices (plasma igniters), this invention proposes a detonator electronic circuit with high-voltage unipolar and bipolar voltage-current modulation communication.

[0007] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: a detonator electronic circuit for high-voltage unipolar voltage-current modulation communication, comprising a high-voltage unipolar voltage regulator circuit, a unipolar voltage modulation communication detonator electronic chip driving circuit, and a high-voltage plasma exciter triggering circuit. The high-voltage unipolar voltage regulator circuit includes: a high-voltage bridge DQ, a high-voltage transistor T21, a Zener diode W21, and a resistor R21. Input terminals 1 and 3 of the high-voltage bridge DQ are respectively connected to the detonator lead wire terminals LINE-A and LINE-B. High-voltage transient suppression diodes TVS1 and TVS2 are also connected in series between input terminals 1 and 3 of the high-voltage bridge DQ. Furthermore, the wire between the series high-voltage transient suppression diodes TVS1 and TVS2 is grounded. The output terminal 2 of the high-voltage bridge DQ outputs high-voltage electricity to the trigger circuit of the high-voltage plasma exciter. The output terminal 2 of the high-voltage bridge DQ is also connected in parallel to one end of the resistor R1 and the collector of the high-voltage transistor T21. The other end of the resistor R21 is connected in parallel to the base of the high-voltage transistor T21 and the cathode of the Zener diode W21. The anode of the Zener diode W21 is connected in parallel to the output terminal 4 of the high-voltage bridge DQ and the BUS2 interface of the unipolar voltage modulation communication detonator electronic chip. The emitter of the high-voltage transistor T21 is connected to the BUS1 interface of the unipolar voltage modulation communication detonator electronic chip.

[0008] The unipolar voltage modulation communication detonator electronic chip driving circuit includes a unipolar voltage modulation communication detonator electronic chip IE1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3; the high-voltage plasma exciter triggering circuit includes a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2.

[0009] Pin 1 of the unipolar voltage modulation communication detonator electronic chip IE1 is connected in parallel to the gate (G) of the high-voltage N-type MOSFET NM1 and the input terminal of the inverter U2. The drain (D) of the high-voltage N-type MOSFET NM1 is connected in series with resistor R1 and then connected to the output terminal 2 of the high-voltage bridge DQ. The source (S) of the MOSFET NM1 is connected in parallel to the input terminal of the linear step-down converter U1 and the positive terminal of diode D1. The output terminal of the linear step-down converter U1 is connected in parallel to pin 5 of the unipolar voltage modulation communication detonator electronic chip IE1 and the gate (G) of the high-voltage P-type MOSFET PM1. The negative terminal of the diode D1 is connected in parallel to one end of resistor R2, one end of the plasma exciter DHJ, and one end of the high-voltage energy storage capacitor C1. The other end of resistor R2 is connected to the drain (D) of the high-voltage N-type MOSFET NM2. The source (S) of the high-voltage N-type MOSFET NM2 is grounded. The gate (G) of the high-voltage N-type MOSFET NM2 is connected to the output terminal of the inverter U2. The power supply terminal of the inverter U2 is connected in parallel to the unipolar voltage modulation communication detonator electronic chip. The circuit consists of: pin 8 of IE1, one end of capacitor C3, the source (S) of high-voltage P-type MOSFET PM1; the other end of capacitor C3 connected in parallel to one end of capacitor C2, one end of resistor R3, pin 6 of unipolar voltage modulation communication detonator electronic chip IE1, the source (S) of high-voltage N-type MOSFET NM3, and the other end of capacitor C1 grounded; the other end of capacitor C2 connected to pin 7 of unipolar voltage modulation communication detonator electronic chip IE1; the other end of resistor R3 connected in parallel to the drain (D) of high-voltage P-type MOSFET PM1 and the gate (G) of high-voltage N-type MOSFET NM3; pin 2 of unipolar voltage modulation communication detonator electronic chip IE1 connected to the emitter of high-voltage transistor T21; and pin 3 of unipolar voltage modulation communication detonator electronic chip IE1 connected to pin 4 of high-voltage bridge DQ. The other end of the plasma exciter DHJ is connected in parallel to the cathode of diode D2 and the drain (D) of high-voltage N-type MOSFET NM3. The anode of diode D2 is connected to pin 4 of unipolar voltage modulation communication detonator electronic chip IE1.

[0010] The unipolar voltage modulation communication detonator electronic chip IE1 is a general-purpose low-voltage power supply two-wire unipolar voltage modulation communication electronic chip.

[0011] The high-voltage bridge DQ and the high-voltage transistor T21 are both 200V rated devices.

[0012] The high-voltage transistor T21 can be replaced by a high-voltage MOSFET.

[0013] A high-voltage bipolar voltage-current modulation communication detonator electronic circuit includes a high-voltage bipolar voltage regulator circuit, a bipolar voltage modulation communication detonator electronic chip driving circuit, and a high-voltage plasma excitation trigger circuit. The high-voltage bipolar voltage regulator circuit includes: a high-voltage bridge DQ, high-voltage transistors T1 and T2, high-voltage diodes D11-D14, Zener diodes W1 and W2, and resistors R11 and R12. Input terminal 1 of the high-voltage bridge DQ is connected in parallel to the detonator lead wire terminal LINE-A, one end of resistor R11, the negative terminal of high-voltage diode D11, and the collector of high-voltage transistor T1. Input terminal 3 of the high-voltage bridge DQ is connected in parallel to the detonator lead wire terminal LINE-B, one end of resistor R12, the negative terminal of high-voltage diode D12, the collector of high-voltage transistor T2, and the negative terminal of high-voltage diode D13. The positive terminal of high-voltage diode D11 is connected in parallel to the high-voltage transistor T1... The high-voltage bridge DQ outputs high voltage to the VIN1 interface of the bipolar voltage modulation communication detonator electronic chip. The other end of resistor R11 is connected in parallel to the base of high-voltage diode T1 and the negative terminal of Zener diode W1. The anode of Zener diode W1 is connected to the anode of high-voltage diode D12. The anode of high-voltage diode D14 is connected in series with Zener diode W2 and then in parallel to the other end of resistor R12 and the base of high-voltage transistor T2. The emitter of high-voltage transistor T2 is connected in parallel to the anode of high-voltage diode D13 and the VIN2 interface of the bipolar voltage modulation communication detonator electronic chip. Output terminal 2 of the high-voltage bridge DQ outputs high voltage to the high-voltage plasma exciter trigger circuit. A series high-voltage transient suppression diode TVS1 and TVS2 are also connected in parallel between input terminals 1 and 3 of the high-voltage bridge DQ, and the wire between the series high-voltage transient suppression diodes TVS1 and TVS2 is grounded.

[0014] The bipolar voltage modulation communication detonator electronic chip driving circuit includes: a bipolar voltage modulation communication detonator electronic chip IC1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3. The high-voltage plasma exciter triggering circuit includes: a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2.

[0015] Pin 1 of the bipolar voltage modulation communication detonator electronic chip IC1 is connected in parallel to the gate (G) of the high-voltage N-type MOSFET NM1 and the input terminal of the inverter U2. The drain (D) of the high-voltage N-type MOSFET NM1 is connected in series with resistor R1 and then connected to the output terminal 2 of the high-voltage bridge DQ. The source (S) of the MOSFET NM1 is connected in parallel to the input terminal of the linear step-down transformer U1 and the anode of diode D1. The output terminal of the linear step-down transformer U1 is connected in parallel to pin 5 of the bipolar voltage modulation communication detonator electronic chip IC1 and the anode of diode D2. The cathode of diode D1 is connected in parallel to one end of resistor R2, one end of the plasma exciter DHJ, and one end of the high-voltage energy storage capacitor C1. The cathode of diode D2 is connected in parallel to the other end of the plasma exciter DHJ and the drain (D) of the high-voltage N-type MOSFET NM3. The other end of resistor R2 is connected to the drain (D) of the high-voltage N-type MOSFET NM2. The source (S) of the high-voltage N-type MOSFET NM2 is grounded. The gate (G) of OSFET NM2 is connected to the output of inverter U2. The power supply of inverter U2 is connected in parallel to pin 8 of bipolar voltage modulation communication detonator electronic chip IC1, one end of capacitor C3, and the source (S) of high-voltage P-type MOSFET PM1. The other end of capacitor C3 is connected in parallel to one end of capacitor C2, pin 6 of bipolar voltage modulation communication detonator electronic chip IC1, and then grounded. The other end of capacitor C2 is connected to pin 7 of bipolar voltage modulation communication detonator electronic chip IC1. The drain (D) of high-voltage P-type MOSFET PM1 is connected in parallel to one end of resistor R3 and the gate (G) of high-voltage N-type MOSFET NM3. The other end of resistor R3 is connected in parallel to high-voltage energy storage capacitor C1, pin 4 of bipolar voltage modulation communication detonator electronic chip IC1, and then grounded. Pin 2 of bipolar voltage modulation communication detonator electronic chip IC1 is connected to the emitter of high-voltage transistor T1. Pin 3 of bipolar voltage modulation communication detonator electronic chip IC1 is connected to the emitter of high-voltage transistor T2.

[0016] The bipolar voltage modulation communication detonator electronic chip IC1 is selected from the general-purpose low-voltage power supply two-wire bipolar voltage modulation communication series electronic chip.

[0017] The high-voltage bridge DQ, high-voltage transistors T1 and T2, and high-voltage diodes D11-D14 are all 200V rated devices.

[0018] The high-voltage transistors T1 and T2 can be replaced by high-voltage MOSFETs.

[0019] The beneficial effects of this invention compared to the prior art are as follows: By improving the circuit of low-voltage electronic detonator chips at home and abroad, and by using circuit devices with a voltage resistance of ≥100V, high-voltage energy storage capacitors and plasma exciters, this invention enables the driving of high-voltage plasma exciters by low-voltage electronic detonator chips, thereby further improving the safety of detonator electronic chips. Attached Figure Description

[0020] The present invention will be further described below with reference to the accompanying drawings:

[0021] Figure 1 This is a circuit diagram of the internal communication interface of an existing low-voltage bipolar voltage and current modulation electronic chip.

[0022] Figure 2 This is a circuit diagram of the internal communication interface of an existing low-voltage unipolar voltage-current modulation electronic chip.

[0023] Figure 3 This is a circuit diagram of the communication interface of the high-voltage bipolar voltage-current modulation electronic chip of the present invention;

[0024] Figure 4 This is a circuit diagram of the communication interface of the high-voltage unipolar voltage-current modulation electronic chip of the present invention;

[0025] Figure 5 This is a MOS circuit diagram of the communication interface for the high-voltage bipolar detonator electronic chip of the present invention;

[0026] Figure 6 This is a MOS circuit diagram of the communication interface for the high-voltage unipolar detonator electronic chip of the present invention;

[0027] Figure 7 This is the electronic circuit diagram of the detonator for high-voltage bipolar voltage-current modulation communication according to the present invention;

[0028] Figure 8 This is the electronic circuit diagram of the detonator for high-voltage unipolar voltage-current modulation communication according to the present invention;

[0029] In the diagram: 100 represents the internal communication interface circuit of an existing low-voltage bipolar voltage-current modulation electronic chip, and 200 represents the internal communication interface circuit of an existing low-voltage unipolar voltage-current modulation electronic chip. Detailed Implementation

[0030] like Figure 3 The diagram shown is a communication interface circuit diagram of the high-voltage bipolar voltage-current modulation electronic chip provided by the present invention. It includes: detonator pin terminals LINE-A and LINE-B, a high-voltage bridge DQ, high-voltage transistors T1 and T2, high-voltage diodes D11-D14, Zener diodes W1 and W2, resistors R11 and R12, and an internal communication interface circuit 100 for the low-voltage bipolar voltage-current modulation electronic chip. The detonator pin terminals LINE-A and LINE-B are connected to the input terminals 1 and 3 of the high-voltage bridge DQ via contacts a and b. The high-voltage bridge DQ, high-voltage transistors T1 and T2, and high-voltage diodes D11-D14 are 200V withstand devices. The output terminal 2 of the high-voltage bridge DQ outputs a high-voltage voltage VH, and the output terminal 4 is grounded.

[0031] The high-voltage bridge DQ, high-voltage transistors T1 and T2, high-voltage diodes D11-D14, Zener diodes W1 and W2, and resistors R11 and R12 constitute a bipolar high-voltage regulated (20V) circuit, ensuring that the operating voltage between VIN1 and VIN2 of the internal communication interface circuit 100 of the low-voltage bipolar voltage-current modulation electronic chip is within the maximum safe voltage range; the input voltage of the detonator lead wire terminals LINE-A and LINE-B can be selected within the range of 10V-150V.

[0032] When the detonator communication interface provides high voltage (e.g., 100V) and connects the detonator pin terminals LINE-A (positive) and LINE-B (negative), the 20V regulated circuit, composed of transistor T1, diode D12, Zener diode W1 (20V), and resistor R11, provides 20V voltage to the electronic chip's interface terminals VIN1 and VIN2. In this state, the current from the detonator pin terminal LINE-A flows through transistor T1, causing the collector and emitter to flow into the electronic chip interface VIN1. The current then flows through the electronic chip's internal components and out through the electronic chip interface VIN2. The current flowing out of VIN2 flows through diode D13 into the LINE-B pin terminal and returns to the negative terminal of the detonator communication interface. In this state, the output voltage VH from the output terminal 2 of the high-voltage bridge DQ is 100V.

[0033] When the detonator communication interface provides high voltage (e.g., 100V) to the detonator pin terminals LINE-B (positive) and LINE-A (negative), a 20V regulated circuit composed of transistor T2, diode D14, Zener diode W2 (20V), and resistor R12 provides voltage to the electronic chip's interface terminals VIN2 and VIN1. In this state, the current at the detonator pin terminal LINE-B flows through transistor T2, causing the collector and emitter to flow into the electronic chip interface VIN2. The current then flows through the electronic chip's internal components and out through the electronic chip interface VIN1. The current flowing out of VIN1 flows through diode D11 back to the negative terminal of the detonator communication interface via the LINE-A pin terminal. In this state, the output voltage VH at the output terminal 2 of the high-voltage bridge DQ is 100V.

[0034] When the voltage supplied by the detonator communication interface to the detonator lead terminals LINE-A and LINE-B is ≤20V, the 20V voltage regulator circuit composed of transistor T1 or T2, diode D12 or D14, Zener diode W1 or W2, and resistor R11 or R12 is ineffective. When the detonator communication interface provides a voltage of ≤20V for voltage modulation communication, and the detonator communication interface is connected to the detonator lead terminal LINE-A as the positive or negative terminal and LINE-B is connected to the communication interface as the negative or positive terminal, the modulated voltage directly passes through the resistor R11 or R12 connected between the collector and base of transistor T1 or T2, and then through the emitter of transistor T1 or T2 and diode D11 or R12. The loop voltage modulation signal formed by 13 or D11 is input to the VIN1 and VIN2 interfaces of the electronic chip. Then, the voltage comparator U1 in the electronic chip performs voltage polarity conversion and outputs the RXD digital logic signal, which is received by the digital process management circuit to complete the master-slave voltage modulation communication. The TDX digital logic signal issued by the digital process management circuit in the electronic chip drives the gate of the NM transistor through the Driver circuit, so that the drain and source of the NM transistor are turned on and off. The current flows through the diode to D5 or D6, and the voltage drop formed on the resistor R1 according to the communication logic level is converted into the required modulation current value. The VIN1 and VIN2 interfaces and the pin wire circuit are received by the detonator communication interface to complete the slave-master communication.

[0035] like Figure 4The diagram shows the communication interface circuit of the high-voltage unipolar voltage-current modulation electronic chip of the present invention. The internal communication interface circuit 200 of the low-voltage unipolar voltage-current modulation electronic chip connects the voltage modulation signals input from BUS1 and BUS2 interfaces to the input terminal of a bridge circuit composed of diodes D1-D4. The bridge circuit rectifies and outputs a unipolar voltage modulation signal, which is then output from the output terminal. A logic level RXD signal is then formed by transistor NM1 and resistors R2-R4, and is received by the RXD terminal of the digital process management circuit to complete master-slave voltage modulation communication. The digital process management circuit outputs a TXD digital logic signal. The signal drives the gate (G) of transistor NM2 via the Driver circuit, causing the drain (D) and source (S) of NM2 to conduct and open respectively. The current, through the output of the D1-D4 bridge, forms a voltage drop across resistor R1 according to the communication logic level, which is converted into the required modulated current value. This value is then received by the detonator's communication interface via the BUS1 and BUS2 interfaces and the pin circuit to complete slave-master communication. Therefore, the high-voltage unipolar voltage-current modulation electronic chip communication interface circuit is composed of a high-voltage bridge DQ, a high-voltage transistor T21, a Zener diode W21, a resistor R21, and a unipolar voltage-current modulation electronic chip 200. The high-voltage bridge DQ, high-voltage transistor T21, Zener diode W21, and resistor R21 form a high-voltage regulated (20V) circuit to ensure that the operating voltage between BUS1 and BUS2 of the internal communication interface circuit 200 of the low-voltage unipolar voltage-current modulation electronic chip is within the maximum safe voltage range; the input voltage of the detonator lead terminals LINE-A and LINE-B can be selected within the range of 10V-150V; when the voltage provided by the detonator lead terminals LINE-A and LINE-B is ≤20V, the circuit consists of transistor T21, Zener diode W21, and resistor R21. The 20V regulated circuit is ineffective; the detonator communication interface provides a voltage ≤20V for voltage modulation communication. When the detonator communication interface is connected to the detonator pin terminal LINE-A as the positive or negative voltage terminal and LINE-B is connected to the communication interface as the negative or positive voltage terminal, the modulated voltage is rectified by the high-voltage bridge DQ to output a unipolar modulated voltage signal. This signal is directly input to the electronic chip BUS1 and BUS2 interfaces through the circuit voltage modulation signal formed by the emitter of the transistor T21 and the negative terminal of the bridge DQ, via the resistor R21 connected between the collector and base of the transistor T21.

[0036] Figure 5 The diagram shown is a MOS circuit diagram of the communication interface of the high-voltage bipolar detonator electronic chip of the present invention. The MOS circuit of the communication interface of the high-voltage bipolar detonator electronic chip is composed of a high-voltage bridge DQ, high-voltage MOSFETs NM31 and NM32, transistors T31 and T32, diodes D31 and D32, Zener diodes W1 and W2, and resistors R31 and R32.

[0037] Figure 6 The diagram shown is a MOS circuit diagram of the communication interface of the high-voltage unipolar detonator electronic chip of the present invention. The MOS circuit of the communication interface of the high-voltage unipolar detonator electronic chip is composed of a high-voltage bridge DQ, a high-voltage MOSFET NM41, a transistor T41, a Zener diode W1, and a resistor R41.

[0038] like Figure 7 The diagram shown is an electronic circuit diagram of a detonator for high-voltage bipolar voltage-current modulation communication according to the present invention, including: a high-voltage bipolar voltage regulator circuit 100A, a bipolar voltage modulation communication detonator electronic chip driving circuit 100B, and a high-voltage plasma exciter triggering circuit 100C.

[0039] The high-voltage bipolar voltage regulator circuit 100A includes: high-voltage transient suppression diodes TVS1 and TVS2, high-voltage bridge DQ, high-voltage transistors T1 and T2, high-voltage diodes D11-D14, Zener diodes W1 and W2, and resistors R11 and R12.

[0040] The bipolar voltage modulation communication detonator electronic chip driving circuit 100B includes: a bipolar voltage modulation communication detonator electronic chip IC1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3.

[0041] The high-voltage plasma exciter trigger circuit 100C includes: a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2.

[0042] The bipolar voltage modulation communication detonator electronic chip IC1 is selected from the general-purpose detonator JQ2012 series electronic chip. When the JQ2012 chip is powered on, its internal program defaults to a low-level output at pin 1. At this time, NM1 is open, preventing the high-voltage voltage VH output from the bridge from charging the high-voltage capacitor C1. The high-voltage inverter U2 drives NM2 to conduct, and the energy in the high-voltage capacitor C1 is discharged through resistor R2. When pin 1 of the JQ2012 chip is high, NM2 is open, NM1 is conducted, and the high-voltage voltage VH output from the bridge charges the high-voltage capacitor C1. Pin 5 of the JQ2012 chip is defaulted to a high-impedance state by the internal program, and the PM transistor is in an open-circuit state. In this state, the high-voltage voltage VH is connected to the input terminal VN of the linear step-down transformer U1, and the output terminal Vout is connected to pin 5 of the JQ2012 chip for high-voltage voltage detection. The small current pulse voltage output from pin 5 of the JQ2012 chip is detected by diode D2 to check whether the plasma exciter is open-circuited and the connection status between the plasma exciter and the high-voltage capacitor circuit. The internal program controls the delay of pin 5 of the JQ2012 chip to make pin 5 momentarily in a low-resistance conducting state. At this time, the PM tube conducts and triggers the gate of the high-voltage NM3 tube, making the drain and source terminals conduct. The high-voltage capacitor C1 instantaneously discharges a large current in the plasma exciter to generate a plasma shock wave that excites the explosive inside the detonator to form a detonation output.

[0043] The pins LINE-A and LINE-B of the detonator electronic circuit for high-voltage bipolar voltage-current modulation communication are connected to the detonator. The detonator provides a voltage of 20V or less for voltage modulation communication, while the high-voltage capacitor C1 is charged with a voltage of 100V or greater.

[0044] like Figure 8 The diagram shows the detonator electronic circuit for high-voltage unipolar voltage-current modulation communication of the present invention, including: a high-voltage unipolar voltage regulator circuit 200A, a unipolar voltage modulation communication detonator electronic chip driving circuit 200B, and a high-voltage plasma exciter triggering circuit 200C.

[0045] The high-voltage unipolar voltage regulator circuit 200A includes: high-voltage transient suppression diodes TVS1 and TVS2, high-voltage bridge DQ, high-voltage transistor T21, Zener diode W21, and resistor R21.

[0046] The unipolar voltage modulation communication detonator electronic chip driving circuit 200B includes: a unipolar voltage modulation communication detonator electronic chip IE1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3.

[0047] The high-voltage plasma exciter trigger circuit 200C includes: a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2.

[0048] The working principle of the detonator electronic circuit for high-voltage unipolar voltage-current modulation communication is similar to that of the bipolar voltage modulation communication detonator electronic chip drive circuit 200B and the high-voltage plasma exciter trigger circuit 200C, except that the working principles of the high-voltage unipolar voltage regulator circuit 200A and the high-voltage bipolar voltage regulator circuit 100A are different.

[0049] Regarding the specific structure of this invention, it should be noted that the connection relationships between the various component modules used in this invention are definite and achievable. Except as specifically described in the embodiments, their specific connection relationships can bring about corresponding technical effects and solve the technical problems proposed by this invention without relying on the execution of corresponding software programs. The models of the components, modules, and specific components appearing in this invention, the connection methods between them, and the conventional usage methods and expected technical effects brought about by the above technical features, unless specifically described, are all publicly disclosed content in patents, journal articles, technical manuals, technical dictionaries, and textbooks that can be obtained by those skilled in the art before the application date, or belong to conventional technology, common knowledge, and other existing technologies in this field. There is no need to elaborate, which makes the technical solution provided in this case clear, complete, and achievable, and can reproduce or obtain corresponding physical products based on this technical means.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A detonator electronic circuit for high-voltage unipolar voltage-current modulation communication, characterized in that: The device includes a high-voltage unipolar voltage regulator circuit, a unipolar voltage modulation communication detonator electronic chip driving circuit, and a high-voltage plasma exciter triggering circuit. The high-voltage unipolar voltage regulator circuit includes a high-voltage bridge DQ, a high-voltage transistor T21, a Zener diode W21, and a resistor R21. The unipolar voltage modulation communication detonator electronic chip driving circuit includes a unipolar voltage modulation communication detonator electronic chip IE1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3. The high-voltage plasma exciter triggering circuit includes a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2. The input terminals 1 and 3 of the high-voltage bridge DQ are respectively connected to the detonator lead wire terminals LINE-A and LINE-B. A series high-voltage transient suppression diode TVS1 and TVS2 are also connected in parallel between the input terminals 1 and 3 of the high-voltage bridge DQ, and the wire between the series high-voltage transient suppression diodes TVS1 and TVS2 is grounded. The output terminal 2 of the high-voltage bridge DQ outputs high-voltage electricity to the high-voltage plasma exciter trigger circuit. The output terminal 2 of the high-voltage bridge DQ is also connected in parallel to one end of resistor R1 and the collector of high-voltage transistor T21. The other end of resistor R21 is connected in parallel to the base of high-voltage transistor T21 and the cathode of Zener diode W21. The anode of Zener diode W21 is connected in parallel to the output terminal 4 of the high-voltage bridge DQ and the BUS2 interface of the unipolar voltage modulation communication detonator electronic chip. The emitter of high-voltage transistor T21 is connected to the BUS1 interface of the unipolar voltage modulation communication detonator electronic chip.

2. The detonator electronic circuit for high-voltage unipolar voltage-current modulation communication according to claim 1, characterized in that: Pin 1 of the unipolar voltage modulation communication detonator electronic chip IE1 is connected in parallel to the gate (G) of the high-voltage N-type MOSFET NM1 and the input terminal of the inverter U2. The drain (D) of the high-voltage N-type MOSFET NM1 is connected in series with resistor R1 and then connected to the output terminal 2 of the high-voltage bridge DQ. The source (S) of the MOSFET NM1 is connected in parallel to the input terminal of the linear step-down converter U1 and the positive terminal of diode D1. The output terminal of the linear step-down converter U1 is connected in parallel to pin 5 of the unipolar voltage modulation communication detonator electronic chip IE1 and the gate (G) of the high-voltage P-type MOSFET PM1. The negative terminal of the diode D1 is connected in parallel to one end of resistor R2, one end of the plasma exciter DHJ, and one end of the high-voltage energy storage capacitor C1. The other end of resistor R2 is connected to the drain (D) of the high-voltage N-type MOSFET NM2. The source (S) of the high-voltage N-type MOSFET NM2 is grounded. The gate (G) of the high-voltage N-type MOSFET NM2 is connected to the output terminal of the inverter U2. The power supply terminal of the inverter U2 is connected in parallel to the unipolar voltage modulation communication detonator electronic chip. The circuit consists of: pin 8 of IE1, one end of capacitor C3, the source (S) of high-voltage P-type MOSFET PM1; the other end of capacitor C3 connected in parallel to one end of capacitor C2, one end of resistor R3, pin 6 of unipolar voltage modulation communication detonator electronic chip IE1, the source (S) of high-voltage N-type MOSFET NM3, and the other end of capacitor C1 grounded; the other end of capacitor C2 connected to pin 7 of unipolar voltage modulation communication detonator electronic chip IE1; the other end of resistor R3 connected in parallel to the drain (D) of high-voltage P-type MOSFET PM1 and the gate (G) of high-voltage N-type MOSFET NM3; pin 2 of unipolar voltage modulation communication detonator electronic chip IE1 connected to the emitter of high-voltage transistor T21; and pin 3 of unipolar voltage modulation communication detonator electronic chip IE1 connected to pin 4 of high-voltage bridge DQ. The other end of the plasma exciter DHJ is connected in parallel to the cathode of diode D2 and the drain (D) of high-voltage N-type MOSFET NM3. The anode of diode D2 is connected to pin 4 of unipolar voltage modulation communication detonator electronic chip IE1.

3. The detonator electronic circuit for high-voltage unipolar voltage-current modulation communication according to claim 2, characterized in that: The unipolar voltage modulation communication detonator electronic chip IE1 is a general-purpose low-voltage power supply two-wire unipolar voltage modulation communication electronic chip. The high-voltage bridge DQ and the high-voltage transistor T21 are both 200V rated devices.

4. The detonator electronic circuit for high-voltage unipolar voltage-current modulation communication according to any one of claims 1-3, characterized in that: The high-voltage transistor T21 can be replaced by a high-voltage MOSFET.

5. A detonator electronic circuit for high-voltage bipolar voltage-current modulation communication, characterized in that: The device includes a high-voltage bipolar voltage regulator circuit, a bipolar voltage modulation communication detonator electronic chip driving circuit, and a high-voltage plasma exciter triggering circuit. The high-voltage bipolar voltage regulator circuit includes: a high-voltage bridge DQ, high-voltage transistors T1 and T2, high-voltage diodes D11-D14, Zener diodes W1 and W2, and resistors R11 and R12. The bipolar voltage modulation communication detonator electronic chip driving circuit includes: a bipolar voltage modulation communication detonator electronic chip IC1, a linear step-down converter U1, an inverter U2, high-voltage N-type MOSFETs NM1 and NM2, a P-type MOSFET PM1, a high-voltage diode D1, resistors R1-R3, and capacitors C2 and C3. The high-voltage plasma exciter triggering circuit includes: a plasma exciter DHJ, a high-voltage energy storage capacitor C1, a high-voltage MOSFET NM3, and a diode D2. The input terminal 1 of the high-voltage bridge DQ is connected in parallel to the detonator lead wire terminal LINE-A, one end of resistor R11, the negative terminal of high-voltage diode D11, and the collector of high-voltage transistor T1. The input terminal 3 of the high-voltage bridge DQ is connected in parallel to the detonator lead wire terminal LINE-B, one end of resistor R12, the negative terminal of high-voltage diode D12, the collector of high-voltage transistor T2, and the negative terminal of high-voltage diode D13. The positive terminal of high-voltage diode D11 is connected in parallel to the emitter of high-voltage transistor T1, the negative terminal of high-voltage diode D14, and the VIN1 interface of the bipolar voltage modulation communication detonator electronic chip. The other end of resistor R11 is connected in parallel to the base of high-voltage diode T1 and a Zener diode. The negative terminal of W1 is connected to the positive terminal of the Zener diode W1, which is connected to the positive terminal of the high-voltage diode D12. The positive terminal of the high-voltage diode D14 is connected in series with the Zener diode W2 and then in parallel with the other end of the resistor R12 and the base of the high-voltage transistor T2. The emitter of the high-voltage transistor T2 is connected in parallel with the positive terminal of the high-voltage diode D13 and the VIN2 interface of the bipolar voltage modulation communication detonator electronic chip. The output terminal 2 of the high-voltage bridge DQ outputs high voltage to the trigger circuit of the high-voltage plasma exciter. A series high-voltage transient suppression diode TVS1 and TVS2 are also connected in parallel between the input terminals 1 and 3 of the high-voltage bridge DQ, and the wire between the series high-voltage transient suppression diodes TVS1 and TVS2 is grounded.

6. The detonator electronic circuit for high-voltage bipolar voltage-current modulation communication according to claim 5, characterized in that: Pin 1 of the bipolar voltage modulation communication detonator electronic chip IC1 is connected in parallel to the gate (G) of the high-voltage N-type MOSFET NM1 and the input terminal of the inverter U2. The drain (D) of the high-voltage N-type MOSFET NM1 is connected in series with resistor R1 and then connected to the output terminal 2 of the high-voltage bridge DQ. The source (S) of the MOSFET NM1 is connected in parallel to the input terminal of the linear step-down transformer U1 and the anode of diode D1. The output terminal of the linear step-down transformer U1 is connected in parallel to pin 5 of the bipolar voltage modulation communication detonator electronic chip IC1 and the anode of diode D2. The cathode of diode D1 is connected in parallel to one end of resistor R2, one end of the plasma exciter DHJ, and one end of the high-voltage energy storage capacitor C1. The cathode of diode D2 is connected in parallel to the other end of the plasma exciter DHJ and the drain (D) of the high-voltage N-type MOSFET NM3. The other end of resistor R2 is connected to the drain (D) of the high-voltage N-type MOSFET NM2. The source (S) of the high-voltage N-type MOSFET NM2 is grounded. The gate (G) of OSFET NM2 is connected to the output of inverter U2. The power supply of inverter U2 is connected in parallel to pin 8 of bipolar voltage modulation communication detonator electronic chip IC1, one end of capacitor C3, and the source (S) of high-voltage P-type MOSFET PM1. The other end of capacitor C3 is connected in parallel to one end of capacitor C2, pin 6 of bipolar voltage modulation communication detonator electronic chip IC1, and then grounded. The other end of capacitor C2 is connected to pin 7 of bipolar voltage modulation communication detonator electronic chip IC1. The drain (D) of high-voltage P-type MOSFET PM1 is connected in parallel to one end of resistor R3 and the gate (G) of high-voltage N-type MOSFET NM3. The other end of resistor R3 is connected in parallel to high-voltage energy storage capacitor C1, pin 4 of bipolar voltage modulation communication detonator electronic chip IC1, and then grounded. Pin 2 of bipolar voltage modulation communication detonator electronic chip IC1 is connected to the emitter of high-voltage transistor T1. Pin 3 of bipolar voltage modulation communication detonator electronic chip IC1 is connected to the emitter of high-voltage transistor T2.

7. The detonator electronic circuit for high-voltage bipolar voltage-current modulation communication according to claim 6, characterized in that: The bipolar voltage modulation communication detonator electronic chip IC1 is selected from the general-purpose low-voltage power supply two-wire bipolar voltage modulation communication series electronic chip. The high-voltage bridge DQ, high-voltage transistors T1 and T2, and high-voltage diodes D11-D14 are all 200V rated devices.

8. The detonator electronic circuit for high-voltage bipolar voltage-current modulation communication according to any one of claims 5-7, characterized in that: The high-voltage transistors T1 and T2 can be replaced by high-voltage MOSFETs.

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