A waveguide-microstrip transition structure and its design method

Abstract

This invention, belonging to the field of electromagnetic fields and microwave technologies, discloses a millimeter-wave waveguide-microstrip transition structure with bandpass filtering capabilities and its design method. The transition structure comprises a metal cavity and a microstrip transmission line. Based on a microstrip probe, the present invention achieves excellent suppression of out-of-passband signals by symmetrically loading cross-shaped metal patches with short-circuit vias on both sides of the probe near the probe end as resonant units, thereby effectively improving the filtering characteristics. The present invention tightly integrates the filter and the transition structure, improving system integration while also facilitating system miniaturization and reducing system complexity. This invention is of great value in millimeter-wave wireless communication systems.

Description

Technical Field

[0001] The present invention belongs to the field of electromagnetic field and microwave technology, and particularly relates to a millimeter wave waveguide-microstrip transition structure with a bandpass filtering function and a design method thereof. Background Art

[0002] In millimeter-wave communications and radar systems, transmission line transition structures are used to convert and transmit signals between different transmission lines. As an important transmission medium in the millimeter-wave frequency band, waveguides are widely used in the millimeter-wave and terahertz frequency bands due to their low transmission loss and high power capacity.

[0003] However, existing solid-state devices are integrated and connected using planar transmission lines. This requires efficient conversion between three-dimensional waveguide transmission lines and planar transmission lines to ensure effective system operation. Furthermore, any system operates within a certain frequency band, and effectively suppressing out-of-band signals and interference is crucial to ensuring high system performance. Existing solutions rely on conversion between different transmission lines and filtering networks to eliminate out-of-band interference, but this approach complicates the system structure and poses challenges in miniaturization and efficient integration.

[0004] Therefore, in order to achieve conversion between different transmission lines and effectively suppress out-of-band interference of the system, an innovative implementation solution is needed to realize selective and efficient signal transmission between different transmission lines to meet the increasingly stringent development needs of millimeter wave communication and radar systems. Summary of the Invention

[0005] The present invention aims to overcome the shortcomings of the existing technology and proposes a millimeter-wave waveguide-microstrip conversion structure with a bandpass filter function to achieve efficient transmission of signals in a specific frequency band and suppress interference signals outside the band.

[0006] The present invention is implemented as follows: a waveguide-microstrip transition structure is used to realize energy conversion between a waveguide and a microstrip transmission line. The structure includes: a standard waveguide cavity for carrying microwave signals in a waveguide mode; a microstrip transmission line for carrying microwave signals in a microstrip mode; a transition cavity, which has a waveguide short-circuit branch with a metal wall terminal and a smooth corner structure, for realizing efficient energy conversion from the waveguide mode to the microstrip mode; and a transition microstrip structure, which consists of a bottom metal layer, a top metal guide strip and a dielectric substrate located therebetween, for transmitting microwave signals in the microstrip transmission line.

[0007] Among them, the cavity for implementing the transition further includes: a transition structure with a T-shaped cross-section and a semi-cylindrical transition structure. These two structures work together to smoothly realize the microwave energy conversion from the waveguide mode to the microstrip mode and reduce energy loss.

[0008] Among them, the microstrip structure implementing the transition further includes: cross-shaped metal patches containing short-circuit metal vias symmetrically loaded on both sides of the microstrip line near the probe end. These metal patches are used to optimize the transmission of microwave signals in the microstrip transmission line, and the performance of the transition structure can be fine-tuned by adjusting the size and position of the metal patches.

[0009] Among them, the design and configuration of the transition cavity and microstrip structure are aimed at jointly achieving efficient and low-loss waveguide to microstrip energy conversion, which is suitable for high-frequency communication systems, radar systems and microwave test equipment to improve the system's communication efficiency and signal transmission quality.

[0010] Furthermore, the characteristic impedance of the microstrip transmission line is 50 ohms, the waveguide transmission line is a WR6 standard waveguide, and a probe is used to extend the metal guide strip into the waveguide.

[0011] Furthermore, cross-shaped metal patches with short-circuit vias are symmetrically loaded on both sides of the microstrip line near the probe end to realize the transmission zero point of the filter. The larger the size of the cross-shaped metal patch, the lower the frequency of the transmission zero point.

[0012] In addition, the present invention also provides a microstrip line tuning method, which includes:

[0013] The location, number, and size of the cross-shaped metal patches and short-circuit vias are determined based on the center frequency and bandwidth of the bandpass filter. Adjusting the location and number of the metal patches adjusts the operating frequency band of the bandpass filter.

[0014] The present invention also provides a design method for the above-mentioned waveguide-microstrip transition structure, the specific process of which is as follows:

[0015] Step 1: Waveguide and dielectric substrate selection: Determine the waveguide and dielectric substrate specifications based on technical indicators, including operating center frequency, operating bandwidth, out-of-band suppression, in-band return loss, etc.

[0016] Step 2: Design of the transition cavity: Based on the first step, adjust the waveguide short-circuit branch at the smooth part (theoretically, it is one-quarter of the center frequency wavelength), the radius of the semi-cylindrical transition structure, and the length and width parameters of the T-shaped transition structure.

[0017] Step 3: Design of the transition section microstrip structure: By loading the microstrip structure and combining it with the aforementioned cavity structure, the electromagnetic wave transmission loss is reduced. At the same time, the electromagnetic energy transmission outside the working frequency band is suppressed, that is, the frequency selection characteristic is achieved.

[0018] Step 4: Overall circuit optimization design: Use full-wave simulation to optimize the overall layout and design of the transition cavity and transition microstrip structure;

[0019] Step 5: Physical production and debugging: Implement the design results of step 4 into physical form, assemble it into a complete machine and debug it online.

[0020] Furthermore, in the first step, the technical indicators are: operating center frequency of 130GHz, bandwidth of 20GHz, and in-band echo ≤-15dB; the dielectric substrate is a quartz substrate with a thickness of 0.127mm and a dielectric constant of 3.78;

[0021] Furthermore, the transition microstrip structure in the third step includes a cross-shaped metal patch structure to increase the transmission zero point and perform out-of-band suppression.

[0022] The present invention has the following effects:

[0023] First, this transition structure has low insertion loss, which helps improve conversion efficiency. Compared to rectangular patches, the use of cross-shaped metal patches creates two transmission zeros, effectively improving out-of-band suppression. Compared to conventional structures, this invention efficiently integrates transition and filtering, effectively improving system integration and creating a compact structure that facilitates miniaturization. Furthermore, by optimizing the position, number, and size of the metal patches, signal transmission within different frequency bands and suppression of out-of-band interference are achieved.

[0024] Second, the waveguide-microstrip transition structure demonstrates several significant technological advancements compared to existing technologies:

[0025] 1) Efficient Energy Conversion: A sophisticated transition cavity design, including a T-shaped and semi-cylindrical transition structure, optimizes the microwave energy conversion process from waveguide mode to microstrip mode. This design significantly improves energy conversion efficiency and reduces energy loss during the conversion process, making the entire system more efficient and reliable in high-frequency signal transmission.

[0026] 2) Signal Transmission Optimization: The symmetrically loaded cross-shaped metal patch containing short-circuit metal vias introduced into the transitional microstrip structure significantly improves the transmission quality of microwave signals in the microstrip transmission line through fine-tuning of both sides of the microstrip line. This design optimizes signal stability and transmission efficiency, playing a significant role in improving system communication quality and reducing interference.

[0027] 3) Structural Design Innovation: This waveguide-microstrip transition structure achieves a smooth transition between waveguide and microstrip by utilizing innovative designs such as T-shaped and semi-cylindrical transition structures, as well as cross-shaped metal patches. This innovative structural design not only enables efficient energy conversion but also provides a strong guarantee for the stable transmission of microwave signals, demonstrating technological innovation capabilities in the microwave and RF fields.

[0028] 4) Expanded Applications: Thanks to these technological advances, this waveguide-to-microstrip transition structure can be widely used in demanding technical fields such as high-frequency communications systems, radar systems, and microwave test equipment. Its efficient energy conversion and optimized signal transmission solutions offer new solutions for the design and optimization of complex communications systems, significantly expanding its application and practicality.

[0029] In summary, the development of this waveguide-microstrip transition structure reflects significant technological progress in microwave signal processing and transmission technology, and provides important technical support for the development and application of high-frequency communication technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of the waveguide-microstrip transition structure of the present invention;

[0031] Figure 2 A top view of the waveguide-microstrip transition structure of the present invention;

[0032] Figure 3 This is a front view of the waveguide-microstrip transition structure of the present invention;

[0033] Figure 4 It is a left side view of the waveguide-microstrip transition structure of the present invention;

[0034] Figure 5 Schematic diagram of the transitional microstrip structure and dielectric substrate of the present invention;

[0035] Figure 6 is an S parameter curve diagram described in the embodiment;

[0036] In the figure: 1. Transition cavity; 2. Microstrip structure; 1-1. T-type transition structure; 1-2. Semi-cylindrical transition structure; 2-1. Metal guide strip; 2-2. Dielectric substrate; 2-3. Resonant unit; 2-4. Metallized via; 2-5. 50-ohm microstrip line. DETAILED DESCRIPTION

[0037] The present invention will be further described below with reference to the accompanying drawings and examples.

[0038] Example 1: Application in high-frequency communication systems

[0039] In a high-frequency communication system, it is necessary to convert the microwave signal in waveguide mode received by the antenna into a microstrip mode so that the signal can be processed and analyzed on the microstrip transmission line on the printed circuit board (PCB). This system uses the waveguide-microstrip transition structure described above, with the following specific applications:

[0040] 1) Waveguide cavity: Receives the waveguide mode microwave signal from the antenna. The signal needs to be sent to the subsequent amplification and mixing units within the system for further processing.

[0041] 2) Transition cavity: A transition structure with a T-shaped and semi-cylindrical cross-section is used to smoothly convert the waveguide mode signal into the microstrip mode signal while minimizing the signal loss during the conversion process.

[0042] 3) Microstrip transmission line: The converted microstrip mode signal is transmitted through the microstrip transmission line on the dielectric substrate to subsequent amplification and mixing units.

[0043] 4) Enhanced design of microstrip structure: Symmetrically loaded cross-shaped metal patches containing short-circuit metal vias are used at key locations of the microstrip transmission line to optimize signal transmission quality and stability, ensuring signal integrity and high quality before reaching subsequent units.

[0044] The application of this embodiment in a high-frequency communication system significantly improves the efficiency and quality of signal conversion and ensures the communication performance of the system.

[0045] Example 2: Application in microwave testing equipment

[0046] In a device used to test microwave signal characteristics, it is necessary to convert the microstrip mode signal generated by the device into a waveguide mode so that it can be transmitted to the test object through a waveguide interface. This device also uses the above-mentioned waveguide-microstrip transition structure, and its specific applications are as follows:

[0047] 1) Microstrip transmission line: The microstrip mode microwave signal generated inside the device is amplified or otherwise processed by corresponding units such as amplifiers through the microstrip transmission line on the dielectric substrate.

[0048] 2) Implementing a transitional microstrip structure: By enhancing the designed microstrip structure (including cross-shaped metal patches and short-circuit metal vias), the stability and transmission efficiency of the signal before the transition are ensured.

[0049] 3) Transition cavity: Through specially designed transition cavities (including T-shaped and semi-cylindrical structures), microstrip mode signals are efficiently converted into waveguide mode signals, reducing energy loss during the conversion process.

[0050] 4) Waveguide cavity: The converted waveguide mode signal is transmitted through the waveguide cavity and finally sent out through the waveguide interface of the device.

[0051] The application of this embodiment in microwave testing equipment significantly improves the efficiency of signal conversion and the accuracy of testing, enabling the equipment to efficiently perform microwave signal characteristic testing.

[0052] These two embodiments demonstrate the flexibility and effectiveness of the waveguide-microstrip transition structure in different application scenarios, fully demonstrating its significant technological advancement in improving the efficiency and quality of microwave signal processing.

[0053] like Figure 1 As shown, the millimeter wave waveguide-microstrip transition structure with bandpass filtering characteristics provided by the present invention is a two-port network, wherein one port corresponds to the waveguide and the other port corresponds to the microstrip line. The two-port network includes a standard waveguide cavity, a standard microstrip transmission line (whose characteristic impedance is 50 ohms), a transition cavity, and a microstrip structure 2 (including its substrate) for transition. Figure 3 As shown, the transition cavity 1 structure further includes: a waveguide short-circuit branch with a terminal provided by a metal wall and a smooth corner structure, a T-shaped transition structure 1-1 in cross section, and a semi-cylindrical transition structure 1-2 ( Figure 4 ).like Figure 2 As shown, the microstrip line includes: a bottom metal layer, a top metal conducting strip 2-1, and a dielectric substrate 2-2 located between the bottom and top surfaces.

[0054] For the waveguide short-circuit branch, the corners are smoothed using a cylinder with a radius of R2 = 0.3 mm.

[0055] The central operating frequency of this embodiment is 130 GHz, and the microstrip probe is placed at a quarter-wavelength position at the short-circuit end of the WR6 waveguide. The parameters of the T-shaped transition structure are: bottom width W1 = 1 mm, top width W2 = 0.5 mm, two-layer heights H1 = 0.36 mm, H2 = 0.14 mm, and length L1 = 0.8 mm. The parameters of the semi-cylindrical transition structure are: height H3 = 1.327 mm, radius R1 = 0.5 mm. The output section (corresponding to the shielded microstrip line) has the following parameters: height H = H3 = 1.327 mm, width W = W1 = 1 mm, and length L is set to 0.7 mm.

[0056] The waveguide transition cavity structure is relatively smooth, and the T-shaped and semi-cylindrical air cavities make the transition smooth, which can effectively overcome the stray and high-order modes in the transition conversion and reduce the insertion loss.

[0057] The microstrip transmission line uses a quartz substrate with a dielectric constant of 3.78 and a thickness of 0.127mm. The corresponding 50-ohm microstrip line width is Wt1 = 0.22mm. At the probe end, a conductive strip with a width of Wt2 = 0.19mm and a length of Lg1 = 0.16mm is used for impedance transformation. The probe end still has a transmission line with a width of Wt1 and a length of Lt1 = 0.65mm. Near the probe end, a cross-shaped metal patch with a short-circuit via is loaded at a symmetrical position (d1 = 0.15mm) on both sides. The patch is symmetrical around the center of the patch, with parameters of Wpl1 = 0.2mm, Wpl2 = 0.1mm, Lpl1 = 0.42mm, Lpl2 = 0.32mm, Wpr1 = 0.2mm, Wpr2 = 0.1mm, Lpr1 = 0.52mm, Lpr2 = 0.42mm, and d0 = 0.1mm.

[0058] like Figure 5 As shown in the figure, in the waveguide-microstrip transition structure, the structure corresponding to the microstrip line and its parameter markings include a metal guide strip 2-1, four independent polygonal structures are the corresponding resonant units 2-3, the circle at the center of each resonant unit is a metalized via 2-4, and the microstrip line 2-5 is 50 ohms.

[0059] The innovation of this invention lies in the symmetrical loading of cross-shaped metal patches with short-circuit vias. By optimizing the position, size, and number of the cross-shaped metal patches, precise control of the filtering characteristics can be achieved. The cross-shaped metal patches with short-circuit vias serve as resonant units 2-3 to achieve the absorption effect of RF energy at their resonant frequencies. They are designed outside the desired operating frequency band to form a suppression effect in out-of-band energy transmission, and are integrated into the high-pass characteristics of the waveguide itself to form a bandpass filtering effect in the transition conversion. Through this approach, the fusion and integration of filtering characteristics and transition structures are achieved, providing support for system miniaturization, integration, and high performance.

[0060] Based on the above ideas, a millimeter-wave waveguide-microstrip transition structure with filtering function was proposed and designed, with an in-band return loss better than 15dB and excellent out-of-band suppression effect. The specific simulation results are as follows Figure 6 shown.

[0061] Specifically, Figure 6 This is the effect curve achieved by the patent of this invention. Figure 6 As can be seen from the figure, within a certain bandwidth range with a center frequency of 131 GHz, it has the characteristics of low insertion loss (small |S21|) and good echo (small |S11|). The data corresponding to this curve is obtained by full-wave electromagnetic numerical simulation.

[0062] The numerical simulation process is as follows: first, a transitional structural model is constructed in the corresponding full-wave electromagnetic numerical simulation software (such as CST MicrowaveStudio, Ansys HFSS, etc.);

[0063] Then, the materials of the corresponding structures are set, including setting the metal cavity of the waveguide to air, setting the corresponding substrate parameters of the microstrip line, namely thickness, dielectric constant, loss tangent, and setting the microstrip line guide strip to gold;

[0064] Third, perform simulation settings of the simulator, including simulation frequency range, mesh frequency, excitation port, numerical simulation convergence standard, etc.

[0065] Finally, simulation calculations are performed on corresponding devices, such as servers, and the desired effect is obtained based on the optimized structural parameters.

[0066] In summary, the millimeter-wave waveguide-microstrip transition structure of the present invention, which has bandpass filtering capabilities, uses T-shaped and semi-cylindrical cavities to achieve a smooth transition, overcomes spurious and high-order modes during the transition, and reduces insertion loss. At the same time, by loading a cross-shaped metal patch with a short-circuit via as a resonator, out-of-band suppression is achieved, achieving a filtering effect. This invention tightly integrates transition and filtering, effectively improving system integration and providing support for the development of miniaturized, high-performance systems. It has important value in millimeter-wave communication systems and radar systems.

[0067] This waveguide-to-microstrip transition structure is designed to achieve efficient energy conversion between waveguides and microstrip transmission lines, which has important applications in high-frequency communication systems, radar systems, and microwave test equipment. The following details the connection and positional relationships of this transition structure and its operating principle:

[0068] 1) Waveguide Cavity and Transition Cavity: A standard waveguide cavity is connected to a transition cavity. This cavity, terminated with metal walls, effectively reflects microwave energy, ensuring energy concentration. Waveguide short-circuit stubs with rounded corners help reduce reflections and losses, ensuring efficient microwave energy transfer.

[0069] 2) Transition cavity structure: The transition cavity contains a T-shaped transition structure and a semi-cylindrical transition structure. These structures are designed to smooth the energy conversion process from the waveguide mode to the microstrip mode and achieve effective coupling of the waveguide energy to the microstrip line.

[0070] 3) Microstrip Transmission Line Structure: A microstrip transmission line consists of a bottom metal layer, a top metal conducting strip, and a dielectric substrate between them. This structure helps create a good transmission line environment and provides an efficient propagation path for microwave signals.

[0071] 4) Enhanced design of the microstrip structure: Symmetrically loaded cross-shaped metal patches containing short-circuit metal vias on both sides of the microstrip line near the probe end further optimize the transmission efficiency and stability of the microwave signal. By adjusting the specific size and position of these metal patches, the performance of the transition structure can be fine-tuned.

[0072] The detailed working principle of the present invention:

[0073] 1) The microwave signal in waveguide mode first propagates within a standard waveguide cavity. When the microwave signal enters the transition cavity, the microwave energy is effectively converted from the waveguide mode to the microstrip mode through specially designed transition structures (including T-shaped and semi-cylindrical structures, as well as probe structures inserted from the broadside of the waveguide into the waveguide cavity).

[0074] 2) During the energy conversion process, the transition cavity and microstrip structure are carefully designed to minimize energy loss and reflection, ensuring maximum energy transfer efficiency.

[0075] 3) The microwave signal in the microstrip transmission line is transmitted along the metal conduction strip on the dielectric substrate. The closed environment formed by the metal layers on the bottom and top surfaces further ensures the stability and efficiency of signal transmission.

[0076] 4) The application of signal enhancement design (such as cross-shaped metal patches and short-circuit metal vias) is to further optimize the signal transmission characteristics in microstrip transmission lines, such as reducing reflections by adjusting impedance matching, or enhancing signal transmission quality through specific layout.

[0077] The waveguide-microstrip transition structure provided by the present invention realizes efficient and low-loss energy conversion between the waveguide mode and the microstrip mode through sophisticated design and process, and is suitable for a variety of high-frequency communication and microwave signal processing applications.

[0078] The specific embodiments of the present invention are not limited to the above examples. Any changes and improvements within the spirit and scope of the present invention are included in the scope of the claims of the present invention. Please refer to the attached claims and their equivalents to determine the scope of the claims of the present invention.

Claims

1. A waveguide-microstrip transition structure, characterized in that: include: A standard waveguide cavity is used to carry microwave signals in waveguide mode; a microstrip transmission line is used to carry microwave signals in microstrip mode; A transition cavity having a waveguide short-circuit stub with a metal wall terminal and a rounded corner structure, for achieving efficient energy conversion from waveguide mode to microstrip mode; and a microstrip structure implementing a transition, the microstrip structure consisting of a bottom metal layer, a top metal conducting strip, and a dielectric substrate located therebetween, for conducting microwave signals in a microstrip transmission line; The microstrip structure implementing the transition further includes: cross-shaped metal patches containing short-circuit metal vias symmetrically loaded on both sides of the microstrip line near the probe end. These metal patches are used to optimize microwave signal transmission in the microstrip transmission line. The performance of the transition structure can be finely adjusted by adjusting the size and position of the metal patches. The design and configuration of the transition cavity and microstrip structure are aimed at jointly achieving efficient and low-loss waveguide to microstrip energy conversion, which is suitable for high-frequency communication systems, radar systems and microwave test equipment to improve the communication efficiency of the system and the signal transmission quality.

2. The waveguide-microstrip transition structure according to claim 1, characterized in that: The cavity for implementing the transition further includes: a transition structure with a T-shaped cross-section and a semi-cylindrical transition structure. The two structures work together to smoothly realize the microwave energy conversion from the waveguide mode to the microstrip mode and reduce energy loss.

3. The waveguide-microstrip transition structure according to claim 1, wherein: The transition cavity includes: a waveguide short-circuit branch with a metal wall at the end and a smooth corner structure, a transition structure with a T-shaped cross section, and a semi-cylindrical transition structure.

4. A design method for a millimeter-wave waveguide-microstrip transition structure with bandpass filtering function, characterized in that: For designing the transition structure described in claim 1, the specific process is as follows: Step 1: Waveguide and dielectric substrate selection: Determine the waveguide and dielectric substrate specifications based on technical indicators, including operating center frequency, operating bandwidth, out-of-band suppression, and in-band return loss; Step 2: Design of the transition section cavity: Based on the first step, adjust the radius of the waveguide short-circuit branch at the smooth part and the semi-cylindrical transition structure, as well as the length and width parameters of the T-shaped transition structure; Step 3: Design of the transition section microstrip structure: By loading the microstrip structure and combining it with the aforementioned cavity structure, the electromagnetic wave transmission loss is reduced. At the same time, the electromagnetic energy transmission outside the working frequency band is suppressed, that is, the frequency selection characteristic is achieved. Step 4: Overall circuit optimization design: Use full-wave simulation to optimize the overall layout and design of the transition cavity and transition microstrip structure; Step 5: Physical production and debugging: Implement the design results of step 4 into physical form, assemble it into a complete machine and debug it online.

5. The design method according to claim 4, wherein: In the first step, the technical indicators are: operating center frequency of 130 GHz, bandwidth of 20 GHz, and in-band echo ≤ -15 dB; the dielectric substrate is a quartz substrate with a thickness of 0.127 mm and a dielectric constant of 3.78; The transitional microstrip structure in the third step includes a cross-shaped metal patch structure to increase the transmission zero point and perform out-of-band suppression.

6. The design method according to claim 4, wherein: The corners are smoothed using a cylinder with a radius of R2 = 0.3mm. The central operating frequency is 130GHz, and the microstrip probe is placed at a quarter-wavelength position at the short-circuit end of the WR6 waveguide. It also includes a T-shaped transition structure with a bottom width of W1 = 1mm, a top width of W2 = 0.5mm, two-layer heights of H1 = 0.36mm, H2 = 0.14mm, and a length of L1 = 0.8mm. In addition, it also includes a semi-cylindrical transition structure with a height of H3 = 1.327mm and a radius of R1 = 0.5mm. The waveguide transition cavity structure is relatively smooth. The T-shaped and semi-cylindrical air cavity make the transition smooth, which can effectively overcome spurious and high-order modes in the transition conversion and reduce insertion loss.

7. The design method according to claim 4, wherein: The transmission line uses a quartz substrate with a dielectric constant of 3.78 and a thickness of 0.127mm. The corresponding 50-ohm microstrip line width is Wt1 = 0.22mm. At the probe end, a conductive strip with a width of Wt2 = 0.19mm and a length of Lg1 = 0.16mm is used for impedance transformation. The probe end also contains a transmission line with a width of Wt1 and a length of Lt1 = 0.65mm. Near the probe end, a cross-shaped metal patch with a short-circuit via is loaded at a symmetrical position (d1 = 0.15mm) on both sides. The patch is symmetrical around the center of the patch. The parameters are Wpl1 = 0.2mm, Wpl2 = 0.1mm, Lpl1 = 0.42mm, Lpl2 = 0.32mm, Wpr1 = 0.2mm, Wpr2 = 0.1mm, Lpr1 = 0.52mm, Lpr2 = 0.42mm, and d0 = 0.1mm. This structure is designed to optimize impedance matching and reduce signal transmission loss.

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