Semiconductor mask precision alignment system

Abstract

The invention relates to the field of semiconductor manufacturing technology, and discloses a semiconductor mask precision alignment system, including a laser data acquisition module, an image data acquisition module, and a data processing unit. The semiconductor mask precision alignment system determines whether the semiconductor and the semiconductor mask are aligned by respectively calculating a fitting reference value and a similarity coefficient and comparing the fitting reference value and the similarity coefficient with a corresponding threshold value. When only any one value appears within the corresponding threshold value range, it is determined that the semiconductor position needs to be adjusted. When semiconductor masks and semiconductors of different shapes and sizes are replaced, it can be determined whether to process or adjust according to the fitting reference values ​​and similarity coefficient values ​​of multiple points. The control unit controls the semiconductor processing equipment to process or adjust the position of the semiconductor deviation according to the corresponding signal, thereby reducing the number of repeated adjustments, improving the efficiency of the adjustment, and shortening the calibration time.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor mask precision alignment system. Background Art

[0002] The semiconductor mask is one of the key tools used to manufacture integrated circuits. It is similar to a transparent film with precise patterns on it, which is used to define the circuit structure on the chip. These patterns determine the position and size of each component in the circuit, affecting the performance and function of the chip. It is very important that the semiconductor needs to be aligned with the semiconductor mask before processing, because the accuracy of the mask directly affects the performance and manufacturing cost of the circuit. Alignment means ensuring that the pattern on the mask exactly matches the position on the chip surface, so as to ensure that the circuit structure on the chip is correctly defined and manufactured. If the alignment is inaccurate, it may cause circuit connection errors or device function failure, which in turn affects the performance and reliability of the entire chip. Therefore, alignment is one of the key steps to ensure the quality of chip manufacturing.

[0003] At present, the alignment between semiconductors and semiconductor masks mainly utilizes mechanical devices to accurately align the mask with the chip surface. This method uses a precision mechanical platform or fixture to achieve alignment by adjusting the position and angle. However, when the shape of the semiconductor mask and the semiconductor changes, the operating end of the fixture and the mechanical platform needs to be readjusted for alignment. Repeated calibration is required in this process, which increases the calibration time. Summary of the invention

[0004] 1. Technical issues to be solved

[0005] In view of the deficiencies in the prior art, the present invention provides a semiconductor mask precision alignment system, which has the ability to determine whether the semiconductor and the semiconductor mask are aligned by respectively calculating a fitting reference value and a similarity coefficient and comparing the fitting reference value and the similarity coefficient with a corresponding threshold value. When the fitting reference value and the similarity coefficient are both within the corresponding threshold value range, it indicates that semiconductor processing can be performed. When only any one value is within the corresponding threshold value range, it is determined that the semiconductor position needs to be adjusted. When semiconductor masks and semiconductors of different shapes and sizes are replaced, it can be determined whether processing or adjustment is required based on the fitting reference values ​​and similarity coefficient values ​​of multiple points. The control unit controls the semiconductor processing equipment to process or adjust the position of the semiconductor deviation according to the corresponding signal, thereby reducing the number of repeated adjustments, improving the adjustment efficiency, shortening the calibration time, etc., and solving the above-mentioned problems.

[0006] (II) Technical solution

[0007] To achieve the above-mentioned object, the present invention provides the following technical solutions: A semiconductor mask precision alignment system, comprising a laser data acquisition module, an image data acquisition module, a data processing unit, a data analysis unit and a control unit;

[0008] The laser data acquisition module is composed of a laser emitting unit and a laser acquisition unit. The laser emitting unit is used to emit laser rays to the semiconductor mask and the semiconductor placed on the surface thereof. The laser acquisition unit is used to collect the position data W of the laser rays that penetrate the semiconductor mask and the semiconductor placed on the surface thereof, the incident angle data J of the laser rays, and the laser intensity data Q.

[0009] The image data acquisition module is used to acquire the grayscale value YHd of the corner position of the semiconductor mask, the grayscale value BHd of the corner position of the semiconductor, the overall grayscale feature ZVHd of the semiconductor mask, and the overall grayscale feature ZVHd of the semiconductor;

[0010] The laser data acquisition module and the image data acquisition module send the acquired data to the data processing unit;

[0011] The data processing unit calculates a fitting reference value Nh through the position data W of the laser beam, the incident angle data J of the laser beam, and the laser intensity data Q. The data processing unit calculates a similarity coefficient XS according to the grayscale value YHd of the corner position of the semiconductor mask, the grayscale value BHd of the corner position of the semiconductor, the overall grayscale feature ZYHd of the semiconductor mask, and the overall grayscale feature ZBHd of the semiconductor. The data processing unit sends the calculated fitting reference value Nh and similarity coefficient XS to the data analysis unit;

[0012] The data analysis unit is preset with a fitting reference value threshold Nhyz, and the data analysis unit compares the fitting reference value threshold Nhyz with the fitting reference value Nh to determine whether the semiconductor mask and the semiconductor placed on its surface are aligned. When the semiconductor mask and the semiconductor placed on its surface are aligned, an alignment signal 1 is issued. The data analysis unit is preset with a similarity coefficient threshold XSyz, and the data analysis unit compares the similarity coefficient XS with the similarity coefficient threshold XSyz to determine whether the semiconductor mask and the semiconductor placed on its surface have an aligned corner image. When the semiconductor mask and the semiconductor placed on its surface have an aligned corner image, an alignment signal 2 is issued. When the alignment signal 1 and the alignment signal 2 appear at the same time, the data analysis unit sends an execution operation signal to the control unit. When the alignment signal 1 or the alignment signal 2 appears, the data analysis unit sends a semiconductor adjustment signal to the control unit.

[0013] The control unit is used to execute the signal sent by the data analysis unit.

[0014] Preferably, the laser emitting unit irradiates laser rays to the four corners of the semiconductor respectively, and the laser collection unit collects the four corners to form a first angle data set, a second angle data set, a third angle data set and a fourth angle data set respectively, the first angle data set is expressed as {1_W, 1_J, 1_Q}, the second angle data set is expressed as {2_W, 2_J, 2_Q}, the third angle data set is expressed as {3_W, 3_J, 3_Q}, and the fourth angle data set is expressed as {4_W, 4_J, 4_Q}.

[0015] Preferably, the fitting reference value Nh algorithm expression is as follows:

[0016]

[0017] In the formula, jh_i indicates that all the values ​​in the first angle data set, the second angle data set, the third angle data set and the fourth angle data set formed by the four corners are respectively brought into the calculation, i=1 indicates that the calculation of the first data set starts, mckjh indicates the reference data set, which includes reference position data, reference laser ray incident angle data and reference laser intensity data. The values ​​in this set are fixed values, jj indicates the intercept, and the square of the error between each data in each data set and the reference data and the intercept is calculated to obtain the fitting reference value Nh.

[0018] Preferably, the fitting reference value threshold Nhyz preset in the data analysis unit has a value range of 0 to 0.01, and the data analysis unit compares the fitting reference value Nh with the fitting reference value threshold Nhyz. When the fitting reference value Nh is within the value range of the fitting reference value threshold Nhyz, it is determined that the semiconductor mask and the semiconductor placed on its surface are aligned, and an alignment signal 1 is issued. When the fitting reference value Nh exceeds the value range of the fitting reference value threshold Nhyz, it is determined to be misaligned, and no alignment signal 1 is issued.

[0019] Preferably, the corner position of the semiconductor mask is expressed in coordinate form, and its expression is (m, n); the semiconductor corner position is expressed in coordinate form, and its expression is (M, N); the grayscale value at the corner position (m, n) of the semiconductor mask is YHd, and the grayscale value at the corner position (M, N) of the semiconductor is BHd.

[0020] Preferably, the similarity coefficient XS algorithm expression is as follows:

[0021]

[0022] In the formula, Represents the mean value of the overall grayscale feature ZYHd of the semiconductor mask. Represents the mean value of the overall grayscale characteristic ZBHd of the semiconductor, It represents the sum of the products of the grayscale values ​​of the semiconductor mask and the semiconductor at the same position and the difference between the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to compare the difference in grayscale values ​​between the two images. It represents the square root of the sum of the squares of the differences between the grayscale values ​​of the conductor mask and the semiconductor at the same position and the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to calculate the variance of the grayscale values ​​of the two images.

[0023] Preferably, the data analysis unit is preset with a similarity coefficient threshold XSyz having a value range of 0.95 to 1. The data analysis unit compares the similarity coefficient XS with the similarity coefficient threshold XSyz. When the similarity coefficient XS is within the value range of the similarity coefficient threshold XSyz, it is determined that the semiconductor mask and the corner image of the semiconductor placed on its surface are aligned, and an alignment signal 2 is issued. When the similarity coefficient XS exceeds the value range of the similarity coefficient threshold XSyz, it is determined that the semiconductor mask and the corner image of the semiconductor placed on its surface are not aligned, and no alignment signal 2 is issued.

[0024] Preferably, when the data analysis unit receives both the alignment signal 1 and the alignment signal 2 at the same time, the data analysis unit determines to execute semiconductor processing and sends an execution operation signal to the control unit.

[0025] Preferably, when the data analysis unit only displays either alignment signal 1 or alignment signal 2, the data analysis unit determines that the semiconductor mask and the semiconductor placed on its surface are not aligned, the data analysis unit determines that the semiconductor needs to be adjusted, and sends an adjustment semiconductor signal to the control unit.

[0026] Preferably, when the control unit receives the execution operation signal, the control unit controls the semiconductor processing equipment to process the semiconductor;

[0027] When the control unit receives the semiconductor adjustment signal, the control unit controls the semiconductor processing equipment to adjust the semiconductor position until the data analysis unit sends an execution operation signal.

[0028] Compared with the prior art, the present invention provides a semiconductor mask precision alignment system having the following features:

[0029] Beneficial effects:

[0030] The present invention determines whether the semiconductor and the semiconductor mask are aligned by respectively calculating a fitting reference value and a similarity coefficient and comparing the fitting reference value and the similarity coefficient with a corresponding threshold value. When the fitting reference value and the similarity coefficient are both within the corresponding threshold value range, it indicates that the semiconductor can be processed. When only any one value is within the corresponding threshold value range, it is determined that the semiconductor position needs to be adjusted. When semiconductor masks and semiconductors of different shapes and sizes are replaced, it can be determined whether to process or adjust based on the fitting reference values ​​and similarity coefficient values ​​of multiple points. The control unit controls the semiconductor processing equipment to process or adjust the position of the semiconductor deviation according to the corresponding signal, thereby reducing the number of repeated adjustments, improving the adjustment efficiency, and shortening the calibration time. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic diagram of the system flow of the present invention. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] At present, the mask and the chip surface are precisely aligned by mechanical devices. When semiconductor masks of different shapes and sizes are replaced, the semiconductor and the semiconductor mask need to be accurately aligned by repeated calibration through the mechanical platform, which takes a long time in the alignment process and reduces the efficiency of subsequent production. To solve this problem, a system that can quickly control the mechanical device to accurately align the semiconductor and the semiconductor mask is needed. For this purpose, a semiconductor mask precision alignment system is proposed. Figure 1 The system is composed of a laser data acquisition module, an image data acquisition module, a data processing unit, a data analysis unit and a control unit, wherein:

[0034] The laser data acquisition module is composed of a laser emitting unit and a laser acquisition unit. The laser emitting unit is used to emit laser rays to the semiconductor mask and the semiconductor placed on the surface thereof. By emitting laser rays to the semiconductor and the semiconductor mask, corresponding data of the laser rays when irradiated is generated. According to the corresponding data, whether the semiconductor and the semiconductor mask are aligned can be calculated. The laser acquisition unit is used to collect the position data W of the laser rays that penetrate the semiconductor mask and the semiconductor placed on the surface thereof, the incident angle data J of the laser rays, and the laser intensity data Q, and the position data W, the incident angle data J of the laser rays, and the laser intensity data Q;

[0035] The laser emitting unit needs to irradiate the laser beam to the four corners of the semiconductor. The same is true for the polygonal conductor. The four corners with the farthest distance are selected to irradiate the laser beam. The laser collection unit collects the data corresponding to the laser beam generated at the four corners and forms a first angle data set, a second angle data set, a third angle data set and a fourth angle data set. The expression of the first angle data set is {1_W, 1_J, 1_Q}, the expression of the second angle data set is {2_W, 2_J, 2_Q}, the expression of the third angle data set is {3_W, 3_J, 3_Q}, and the expression of the fourth angle data set is {4_W, 4_J, 4_Q}.

[0036] The image data acquisition module is used to collect the grayscale value YHd of the corner position of the semiconductor mask, the grayscale value BHd of the corner position of the semiconductor, the overall grayscale feature ZYHd of the semiconductor mask, and the overall grayscale feature ZBHd of the semiconductor.

[0037] When the image acquisition module acquires the grayscale value YHd of the corner position of the semiconductor mask and the grayscale value BHd of the corner position of the semiconductor, the corner position of the semiconductor mask and the corner position of the conductor are expressed in coordinate form. The coordinate expression of the corner position of the semiconductor mask is (m, n), and the coordinate expression of the corner position of the semiconductor is (M, N). The coordinates (m, n) and (M, N) are in the same position, that is, the position of the semiconductor mask (m, n) is in the same position as the semiconductor corner (M, N), and there is at least one corner position coordinate of the semiconductor mask and at least one corner position coordinate of the semiconductor.

[0038] When the above data collection is completed, the laser data collection module and the image data collection module send the collected data to the data processing unit.

[0039] The data processing unit calculates the fitting reference value Nh through the laser beam position data W, the laser beam incident angle data J and the laser intensity data Q. The algorithm expression is as follows:

[0040]

[0041] In the formula, jh_i indicates that all the values ​​in the first angle data set, the second angle data set, the third angle data set and the fourth angle data set formed by the four corners are respectively brought into the calculation, i=1 indicates that the calculation of the first angle data set starts, mckjh indicates the reference data set, which includes reference position data, reference laser ray incident angle data and reference laser intensity data. The values ​​in this set are fixed values, jj indicates the intercept, which is the vertical distance between the laser emitting unit and the semiconductor mask. The square of the error between each data in each data set and the reference data and the intercept is calculated to obtain the fitting reference value Nh.

[0042] After the fitting reference value Nh is calculated, the data processing unit sends it to the data analysis unit for analysis. The data analysis unit is preset with a fitting reference value threshold Nhyz, and the fitting reference value threshold Nhyz ranges from 0 to 0.01. The data analysis unit compares the fitting reference value threshold Nhyz with the fitting reference value Nh to determine whether the semiconductor mask and the semiconductor placed on the surface thereof are aligned. The specific comparison method is as follows:

[0043] When the fitting reference value Nh is within the value range of the fitting reference value threshold Nhyz, it is determined that the semiconductor mask and the semiconductor placed on the surface thereof are aligned, and an alignment signal 1 is sent;

[0044] When the fitting reference value Nh exceeds the value range of the fitting reference value threshold Nhyz, it is determined to be misaligned and no alignment signal 1 is issued.

[0045] By calculating the focal position of the laser on the semiconductor and the semiconductor mask, and fitting the relationship between the laser positions, when the laser beam is aligned with the focal position on the semiconductor and the semiconductor mask, the residual of the two values ​​is very small, that is, it is within the value range of the fitting reference value threshold Nhyz. At this time, it is determined that they are aligned. On the contrary, when the residual exceeds the value range of the fitting reference value threshold Nhyz, it means that the semiconductor and the semiconductor mask are not aligned and need to be adjusted.

[0046] The data processing unit calculates the similarity coefficient XS according to the gray value YHd of the corner position of the semiconductor mask, the gray value BHd of the corner position of the semiconductor, the overall gray feature ZYHd of the semiconductor mask, and the overall gray feature ZBHd of the semiconductor. The algorithm expression is as follows:

[0047]

[0048] In the formula, Represents the mean value of the overall grayscale feature ZYHd of the semiconductor mask. Represents the mean value of the overall grayscale characteristic ZBHd of the semiconductor, It represents the sum of the products of the grayscale values ​​of the semiconductor mask and the semiconductor at the same position and the difference between the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to compare the difference in grayscale values ​​between the two images. It represents the square root of the sum of the squares of the differences between the grayscale values ​​of the conductor mask and the semiconductor at the same position and the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to calculate the variance of the grayscale values ​​of the two images.

[0049] The data processing unit sends the similarity coefficient XS to the data analysis unit for analysis. The data analysis unit is preset with a fitting reference value threshold Nhyz, and its value range is 0.95-1. The data analysis unit compares the similarity coefficient XS with the similarity coefficient threshold XSyz to determine whether the corner images of the semiconductor mask and the semiconductor placed on its surface are aligned. The specific comparison method is as follows:

[0050] When the similarity coefficient XS is within the value range of the similarity coefficient threshold value XSyz, it is determined that the corner images of the semiconductor mask and the semiconductor placed on the surface thereof are aligned, and an alignment signal 2 is sent;

[0051] When the similarity coefficient XS exceeds the value range of the similarity coefficient threshold value XSyz, it is determined that the corner images of the semiconductor mask and the semiconductor placed on the surface thereof are not aligned, and no alignment signal 2 is issued.

[0052] By calculating the image grayscale values ​​of the semiconductor mask and the semiconductor at the same position, the similarity of the grayscale distribution between the two is determined. When the semiconductor mask and the semiconductor are aligned and in the same position, the grayscale values ​​of the two are almost the same, that is, the similarity coefficient XS is close to 1. When the similarity coefficient XS is close to 1 and within the similarity coefficient threshold value range, it means that the semiconductor mask and the semiconductor image are aligned. Otherwise, it means that the grayscale value distribution between the two is quite different, and they are not aligned and need to be adjusted.

[0053] When the data analysis unit simultaneously generates the alignment signal one and the alignment signal two, the data analysis unit determines to execute semiconductor processing, and sends an execution operation signal to the control unit. When the control unit receives the execution operation signal, the control unit controls the semiconductor processing equipment to process the semiconductor. The execution of semiconductor processing can be determined only when the alignment signal one and the alignment signal two appear at the same time, and the execution operation is issued. This can reduce the calculation deviation and misjudgment caused by the error in collecting data in the actual environment, thereby achieving the accuracy of alignment.

[0054] When only one of the alignment signal one or the alignment signal two appears in the data analysis unit, the data analysis unit determines that the semiconductor mask and the semiconductor placed on its surface are not aligned, and the data analysis unit determines that the semiconductor needs to be adjusted, and sends an adjustment semiconductor signal to the control unit. By only appearing any one of the signals, it is determined that the semiconductor needs to be adjusted, and an adjustment semiconductor signal is sent. In this way, the probability of misalignment can be reduced and the accuracy of alignment can be improved through double judgment.

[0055] When the control unit receives a semiconductor adjustment signal, the control unit controls the semiconductor processing equipment to adjust the semiconductor position until the data analysis unit sends an execution operation signal. When an adjustment signal appears, the control unit controls the semiconductor processing equipment to repeatedly adjust the semiconductor position, and after each adjustment, collects corresponding data and calculates again until alignment signal 1 and alignment signal 2 appear at the same time and the data analysis unit sends an execution operation signal. In this way, the calculated data can be used to control the semiconductor processing equipment to adjust the semiconductor position or start processing, thereby improving the efficiency of calibration.

[0056] By respectively calculating the fitting reference value and the similarity coefficient and comparing the fitting reference value and the similarity coefficient with the corresponding threshold value, it is determined whether the semiconductor and the semiconductor mask are aligned. When the fitting reference value and the similarity coefficient are both within the corresponding threshold value range, it means that the semiconductor can be processed. When only any one value is within the corresponding threshold value range, it is determined that the semiconductor position needs to be adjusted. When replacing semiconductor masks and semiconductors of different shapes and sizes, it can be determined whether to process or adjust based on the fitting reference values ​​and similarity coefficient values ​​of multiple points. The control unit controls the semiconductor processing equipment to process or adjust the position of the semiconductor deviation according to the corresponding signal, thereby reducing the number of repeated adjustments, improving the adjustment efficiency, and shortening the calibration time.

[0057] The following table shows the comparison of the alignment quality achieved by the method of the present invention and the existing alignment method when the semiconductor mask and the semiconductor shape change:

[0058] Test bench 1 Test bench 2 Test bench 3 Test bench 4 Test bench 5 Mechanical device 4.6s 7.2s 5.6s 7.5s 6.8s The present invention 13ms 15ms 13ms 14ms 13ms

[0059] It can be seen from the above table that the calibration time is significantly shortened by the laser combined with image alignment method in the present invention, which significantly improves the adjustment efficiency and shortens the calibration time.

[0060] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. Semiconductor mask precision alignment system, characterized by: It includes a laser data acquisition module, an image data acquisition module, a data processing unit, a data analysis unit and a control unit; The laser data acquisition module is composed of a laser emitting unit and a laser acquisition unit. The laser emitting unit is used to emit laser rays to the semiconductor mask and the semiconductor placed on the surface thereof. The laser acquisition unit is used to collect the position data W of the laser rays that penetrate the semiconductor mask and the semiconductor placed on the surface thereof, the incident angle data J of the laser rays, and the laser intensity data Q. The image data acquisition module is used to acquire the grayscale value YHd of the corner position of the semiconductor mask, the grayscale value BHd of the corner position of the semiconductor, the overall grayscale feature ZYHd of the semiconductor mask, and the overall grayscale feature ZBHd of the semiconductor; The laser data acquisition module and the image data acquisition module send the acquired data to the data processing unit; The data processing unit calculates a fitting reference value Nh through the position data W of the laser beam, the incident angle data J of the laser beam, and the laser intensity data Q. The data processing unit calculates a similarity coefficient XS according to the grayscale value YHd of the corner position of the semiconductor mask, the grayscale value BHd of the corner position of the semiconductor, the overall grayscale feature ZYHd of the semiconductor mask, and the overall grayscale feature ZBHd of the semiconductor. The data processing unit sends the calculated fitting reference value Nh and similarity coefficient XS to the data analysis unit; The data analysis unit is preset with a fitting reference value threshold Nhyz, and the data analysis unit compares the fitting reference value threshold Nhyz with the fitting reference value Nh to determine whether the semiconductor mask and the semiconductor placed on its surface are aligned. When the semiconductor mask and the semiconductor placed on its surface are aligned, an alignment signal 1 is issued. The data analysis unit is preset with a similarity coefficient threshold XSyz, and the data analysis unit compares the similarity coefficient XS with the similarity coefficient threshold XSyz to determine whether the semiconductor mask and the semiconductor placed on its surface have an aligned corner image. When the semiconductor mask and the semiconductor placed on its surface have an aligned corner image, an alignment signal 2 is issued. When the alignment signal 1 and the alignment signal 2 appear at the same time, the data analysis unit sends an execution operation signal to the control unit. When only one of the alignment signal 1 and the alignment signal 2 appears in the data analysis unit, the data analysis unit determines that the semiconductor mask and the semiconductor placed on its surface are not aligned, and the data analysis unit determines that the semiconductor needs to be adjusted, and sends the semiconductor adjustment signal to the control unit. The control unit is used to execute the signal sent by the data analysis unit.

2. The semiconductor mask precision alignment system according to claim 1, characterized in that: The laser emitting unit irradiates laser rays to the four corners of the semiconductor respectively, and the laser collecting unit collects the four corners to form a first angle data set, a second angle data set, a third angle data set and a fourth angle data set respectively. The first angle data set is expressed as {1_W, 1_J, 1_Q}, the second angle data set is expressed as {2_W, 2_J, 2_Q}, the third angle data set is expressed as {3_W, 3_J, 3_Q}, and the fourth angle data set is expressed as {4_W, 4_J, 4_Q}.

3. The semiconductor mask precision alignment system according to claim 2, characterized in that: The fitting reference value Nh algorithm expression is as follows: In the formula, jh_i indicates that all the values ​​in the first angle data set, the second angle data set, the third angle data set and the fourth angle data set formed by the four corners are respectively brought into the calculation, i=1 indicates that the calculation of the first data set starts, mckjh indicates the reference data set, which includes reference position data, reference laser ray incident angle data and reference laser intensity data. The values ​​in the reference data set are fixed values, jj indicates the intercept, and the square of the error between each data in each data set and the reference data and the intercept is calculated to obtain the fitting reference value Nh.

4. The semiconductor mask precision alignment system according to claim 3, characterized in that: The fitting reference value threshold Nhyz preset in the data analysis unit has a value range of 0 to 0.

01. The data analysis unit compares the fitting reference value Nh with the fitting reference value threshold Nhyz. When the fitting reference value Nh is within the value range of the fitting reference value threshold Nhyz, it is determined that the semiconductor mask and the semiconductor placed on its surface are aligned, and an alignment signal 1 is issued. When the fitting reference value Nh exceeds the value range of the fitting reference value threshold Nhyz, it is determined to be misaligned, and no alignment signal 1 is issued.

5. The semiconductor mask precision alignment system according to claim 1, characterized in that: The corner position of the semiconductor mask is expressed in coordinate form, and its expression is (m, n). The corner position of the semiconductor is expressed in coordinate form, and its expression is (M, N). The grayscale value at the corner position (m, n) of the semiconductor mask is YHd, and the grayscale value at the corner position (M, N) of the semiconductor is BHd.

6. The semiconductor mask precision alignment system according to claim 5, characterized in that: The similarity coefficient XS algorithm expression is as follows: In the formula, Represents the mean value of the overall grayscale feature ZYHd of the semiconductor mask. Represents the mean value of the overall grayscale characteristic ZBHd of the semiconductor, It represents the sum of the products of the grayscale values ​​of the semiconductor mask and the semiconductor at the same position and the difference between the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to compare the difference in grayscale values ​​between the two images. It represents the square root of the sum of the squares of the differences between the grayscale values ​​of the conductor mask and the semiconductor at the same position and the mean of the overall grayscale feature ZYHd of the semiconductor mask and the mean of the overall grayscale feature ZBHd of the semiconductor. It is used to calculate the variance of the grayscale values ​​of the two images.

7. The semiconductor mask precision alignment system according to claim 6, characterized in that: The data analysis unit is preset with a similarity coefficient threshold value XSyz having a value range of 0.95 to 1. The data analysis unit compares the similarity coefficient XS with the similarity coefficient threshold value XSyz. When the similarity coefficient XS is within the value range of the similarity coefficient threshold value XSyz, it is determined that the semiconductor mask and the corner image of the semiconductor placed on its surface are aligned, and an alignment signal 2 is issued. When the similarity coefficient XS exceeds the value range of the similarity coefficient threshold value XSyz, it is determined that the semiconductor mask and the corner image of the semiconductor placed on its surface are not aligned, and no alignment signal 2 is issued.

8. The semiconductor mask precision alignment system according to claim 4 or 7, characterized in that: When the data analysis unit generates the alignment signal 1 and the alignment signal 2 at the same time, the data analysis unit determines to execute semiconductor processing and sends an execution operation signal to the control unit.

9. The semiconductor mask precision alignment system according to claim 8, characterized in that: When the control unit receives the execution operation signal, the control unit controls the semiconductor processing equipment to process the semiconductor; When the control unit receives the semiconductor adjustment signal, the control unit controls the semiconductor processing equipment to adjust the semiconductor position until the data analysis unit sends an execution operation signal.

Images