Himal material and spraying process for improving igbt power cycle test

Abstract

The application discloses a kind of HIMAL material and spraying process for promoting IGBT power cycle test, and the application relates to the technical field of semiconductor packaging, comprising the following steps: DBC marking is carried out on the semiconductor substrate, then chip mounting is carried out, aluminum wire bonding is carried out after one reflow, DBC mounting is carried out twice, then secondary reflow is carried out, shell packaging is carried out again, copper wire bonding is carried out using terminal ultrasonic welding, HIMAL spraying solution is prepared, the semiconductor substrate is sprayed before the whole bonding ends glue pouring process, and glue pouring and curing are carried out.The spraying process for promoting PC experimental reliability using HIMAL material can effectively improve the firmness of bonding weld, enhance the reliability of PC product, improve the service life of PC experimental module by more than 1 times, effectively solve the sealing problem of product anti-sulfurization, and increase the sealing performance of product.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a HIMAL material and spraying process for improving IGBT power cycling performance. Background Technology

[0002] Semiconductor packaging technology is a series of process steps involving mounting semiconductor chip integrated circuits into a protective casing to provide mechanical protection, thermal management, and electrical connection. The main purpose of semiconductor packaging technology is to protect the chip from physical damage, dust, moisture, and other external environmental factors. After semiconductor packaging is completed, copper wire bonding is required, which involves a coating process on the semiconductor. With the rapid development of science and technology, the requirements for semiconductor coating processes are becoming increasingly stringent.

[0003] During semiconductor substrate packaging, copper plating is required at the chip pads to achieve copper wire bonding in order to ensure better conductivity. However, the raw materials used in the spraying process after copper wire bonding cannot effectively improve the strength of the bonding joints, resulting in weaker PC product reliability and limited lifespan extension for PC experimental modules. In addition, the original silicone gel has limited isolation against moisture and harmful gases (halogen gases and sulfide gases) in the air, and cannot effectively solve the sealing problem of product anti-sulfurization, resulting in weak product airtightness.

[0004] Therefore, a HIMAL material and spraying process for improving IGBT power cycling tests are proposed to solve the problems mentioned above. Summary of the Invention

[0005] The purpose of this invention is to provide a HIMAL material and spraying process for improving IGBT power cycling tests, so as to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A spraying process for HIMAL material to improve IGBT power cycling performance includes the following steps:

[0008] Step 1: The normal front-end process involves DBC marking of the semiconductor substrate, followed by chip mounting, aluminum wire bonding after one reflow, DBC mounting after a second reflow, followed by a second reflow, and then encapsulation. Ultrasonic soldering of terminals is used for copper wire bonding, followed by a spray coating process.

[0009] Step 2: Spray coating process. Prepare HIMAL spray coating solution and spray the semiconductor substrate with HIMAL spray coating solution before the encapsulation process is completed.

[0010] Step 3: After the spraying process is completed, the adhesive is poured in and cured.

[0011] Preferably, the spraying environment for the spraying process should be maintained at a temperature of 15-30℃ and a humidity of 50%-70%.

[0012] By adopting the above technical solution, the environmental conditions for the spraying process are met.

[0013] Preferably, the spraying process includes pre-curing and re-curing as part of the preceding normal process, and the coating thickness after pre-curing and re-curing is 10 μm.

[0014] By adopting the above technical solutions, the thickness of the spraying process can be made more specific.

[0015] Preferably, the steps for preparing the HIMAL spraying solution are as follows:

[0016] Step 1: Prepare raw materials, including 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone, aromatic polyamide-imide resin and additives;

[0017] Step 2: Mix and stir the following ingredients according to the following weight ratios: 50%-60% 2-butoxyethyl acetate, 30%-40% 1-methyl-2-pyrrolidone, 5%-15% aromatic polyamide-imide resin, and 1%-2.9% additives.

[0018] Step 3: Mix and stir for 30-60 minutes to obtain the HIMAL spraying solution, then pour it into the spray can.

[0019] By adopting the above technical solution, the raw materials of HIMAL spraying solution include 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone and aromatic polyamide-imide resin. The solubility of water in 2-butoxyethyl acetate is 1.6%, and this miscibility improves the bonding strength of the solder joints of semiconductor chips.

[0020] Preferably, the additive comprises one or more combinations of water, manganese, magnesium, titanium, and boron.

[0021] By adopting the above technical solutions, 1-methyl-2-pyrrolidone can effectively improve product quality and production efficiency, especially in applications requiring high solubility and reactivity. Aromatic polyamide-imide resin enhances the heat resistance and mechanical strength of the joint and provides better insulation protection.

[0022] Preferably, the additives are formulated in proportions of 1%-10% water, 1%-2% manganese, 0.1%-1% magnesium, 2%-3% titanium, and 2%-5% boron, respectively, based on the total weight of the additives.

[0023] By adopting the above technical solution, the HIMAL spraying solution includes an additive, which is composed of N-acetyl groups. Caprolactam is composed of water, manganese, magnesium, titanium, and boron, and also contains N-acetyl groups. Caprolactam improves the stability of the weld interface and the quality of the weld by adjusting the solvent chemistry of the electrolyte and reducing side reactions caused by active water molecules. Manganese can effectively react with free oxygen generated during the welding process, reducing the formation of porosity and inclusions, thereby enhancing the strength and toughness of the weld joint.

[0024] Preferably, the additive also includes N-acetyl groups. Caprolactam, the N-acetyl Caprolactam accounts for 1%-10% of the total weight of the additives.

[0025] By adopting the above technical solutions, magnesium can enhance the mechanical properties of weld metal and help improve the stability of the welding arc and the welding process. Titanium can effectively prevent the formation of porosity in the weld and refine the grains by forming fine carbonitride particles, thereby improving the strength and toughness of the weld.

[0026] Preferably, the N-acetyl group Caprolactam was stirred with water, manganese, magnesium, titanium, and boron at a temperature of 10-30℃ for 20-30 minutes.

[0027] By adopting the above technical solutions, boron can significantly improve the hardness and wear resistance of welds. Boron can also improve the microstructure of welded structures, enhance their crack resistance, and further improve the reliability and stability of PC experiments.

[0028] Compared with the prior art, the beneficial effects of the present invention are:

[0029] In this invention, the HIMAL spraying solution is prepared by means of raw materials including 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone, aromatic polyamide-imide resin, and additives. The additives include water, manganese, magnesium, titanium, boron, and N-acetyl groups. Caprolactam, by spraying the prepared HIMAL spray solution onto the semiconductor substrate and then potting and curing it, can effectively improve the strength of the bonding joints, enhance the reliability of PC products, and increase the lifespan of PC experimental modules by more than 100%. At the same time, the original silicone gel effectively solves the sealing problem of product anti-sulfurization by enhancing the degree of isolation against water vapor and harmful gases (halogen gases and sulfide gases) in the air, and increases the product's airtight performance. Attached Figure Description

[0030] Figure 1This is a schematic diagram of the overall process flow of HIMAL material and spraying process for improving IGBT power cycling test according to the present invention. Detailed Implementation

[0031] Example 1

[0032] Please see Figure 1 A HIMAL material and spraying process for improving IGBT power cycling tests includes the following steps:

[0033] Step 1: The normal front-end process involves DBC marking of the semiconductor substrate, followed by chip mounting, aluminum wire bonding after one reflow, DBC mounting after a second reflow, followed by a second reflow, and then encapsulation. Ultrasonic soldering of terminals is used for copper wire bonding, followed by a spray coating process.

[0034] Step 2: Spray coating process. Prepare HIMAL spray coating solution and spray the semiconductor substrate with HIMAL spray coating solution before the encapsulation process is completed.

[0035] Step 3: After the spraying process is completed, the adhesive is poured in and cured.

[0036] The spraying environment should be maintained at a temperature of 15-30℃ and a humidity of 50%-70%.

[0037] The spraying process includes pre-curing and re-curing in the previous normal process. The coating thickness after pre-curing and re-curing is 10µm.

[0038] The steps for preparing the HIMAL spraying solution are as follows:

[0039] Step 1: Prepare raw materials, including 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone, aromatic polyamide-imide resin and additives;

[0040] Step 2: Mix and stir the following ingredients according to the following weight ratios: 50%-60% 2-butoxyethyl acetate, 30%-40% 1-methyl-2-pyrrolidone, 5%-15% aromatic polyamide-imide resin, and 1%-2.9% additives.

[0041] Step 3: Mix and stir for 30-60 minutes to obtain HIMAL spraying solution, then pour it into the spraying can. Acetic acid-2-butoxyethyl ester can increase the barrier properties of harmful gases and effectively improve the overall stability and durability of composite materials.

[0042] The invention involves the following steps: During the encapsulation and spraying process of a semiconductor substrate, a HIMAL spraying solution is prepared by adding ingredients. The raw materials of the HIMAL spraying solution include 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone, and aromatic polyamide-imide resin. Water has a solubility of 1.6% in 2-butoxyethyl acetate. This miscibility improves the bonding strength of the solder joints on the semiconductor chip. 1-methyl-2-pyrrolidone effectively improves product quality and production efficiency, especially in applications requiring high solubility and reactivity. The aromatic polyamide-imide resin enhances the heat resistance and mechanical strength of the bonding joints, provides better insulation protection, and improves the overall quality of the soldering, further enhancing the reliability of PC experiments.

[0043] Example 2

[0044] Please see Figure 1 Based on Example 1, a HIMAL material and spraying process for improving IGBT power cycling test is described. The front-end normal process involves DBC marking of the semiconductor substrate, followed by chip mounting, aluminum wire bonding after one reflow, DBC mounting again, reflow again, and then encapsulation. Copper wire bonding is performed using terminal ultrasonic welding, and spraying is performed after copper wire bonding.

[0045] Step 2: Spray coating process. Prepare HIMAL spray coating solution and spray the semiconductor substrate with HIMAL spray coating solution before the encapsulation process is completed.

[0046] Step 3: After the spraying process is completed, the adhesive is poured in and cured.

[0047] The additives include one or more combinations of water, manganese, magnesium, titanium, and boron.

[0048] The additives are formulated in proportions of 1%-10% water, 1%-2% manganese, 0.1%-1% magnesium, 2%-3% titanium, and 2%-5% boron, respectively, based on their total weight.

[0049] The additive also includes N-acetyl groups. Caprolactam, N-acetyl Caprolactam accounts for 1%-10% of the total weight of the additives.

[0050] N-acetyl Caprolactam was stirred with water, manganese, magnesium, titanium and boron at a temperature of 10-30℃ for 20-30 minutes.

[0051] The present invention is used in the following steps: During the packaging and coating process of a semiconductor substrate, the present invention involves adding a HIMAL coating solution. The HIMAL coating solution includes an additive, which is composed of N-acetyl groups. Caprolactam is composed of water, manganese, magnesium, titanium, and boron, and also contains N-acetyl groups. Caprolactam improves the stability and quality of the weld interface by adjusting the solvent chemistry of the electrolyte and reducing side reactions caused by active water molecules. Manganese effectively reacts with free oxygen generated during welding, reducing the formation of porosity and inclusions, thus enhancing the strength and toughness of the weld joint. Magnesium enhances the mechanical properties of the weld metal and also helps improve the stability of the welding arc and the welding process. Titanium effectively prevents the formation of porosity in the weld and refines the grains by forming fine carbonitride particles, thereby improving the strength and toughness of the weld. Boron significantly improves the hardness and wear resistance of the weld. Boron also improves the microstructure of the weld structure, enhancing its crack resistance and further improving the reliability and stability of PC experiments.

[0052] Comparative Example

[0053] S1: The normal front-end process involves DBC marking on the semiconductor substrate, followed by chip mounting, aluminum wire bonding after one reflow, DBC mounting again, reflow again, and then encapsulation. Ultrasonic welding of terminals is used for copper wire bonding, followed by a spray coating process.

[0054] S2: Spraying process, preparing HIMAL spraying solution, and spraying the semiconductor substrate with HIMAL spraying solution before the encapsulation process after all bonding is completed.

[0055] S3: Spray coating process, prepare HIMAL spray coating solution, and spray the semiconductor substrate with HIMAL spray coating solution before the encapsulation process is completed.

[0056] By comparing the existing HIMAL material and spraying process for improving IGBT power cycling tests with the spraying process in this application, and noting that existing semiconductor chip packaging coating processes typically utilize high-temperature plasma to melt ceramic materials such as alumina or zirconium oxide and spray them onto the substrate surface, or use high-temperature flames generated by combustion gases to melt materials and spray them onto the substrate surface, or use high-temperature, high-pressure gas flows generated by the combustion of mixed gas and oxygen to spray the coating material onto the substrate surface at supersonic speeds, forming a high-density, low-porosity coating, while the spraying process in this invention uses HL1210N HIMAL material to spray onto the semiconductor substrate surface, it can be found that the spraying process in this application has two significant differences from the existing technology: it can effectively improve the strength of the bonding solder joints, thereby enhancing the reliability of PC products and increasing the lifespan of PC experimental modules by more than 100%, while the original silicone gel effectively solves the sealing problem of product anti-sulfurization by enhancing the isolation degree of moisture and harmful gases in the air.

[0057] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A spraying process for HIMAL material to improve IGBT power cycling test, characterized in that, Includes the following steps: Step 1: The normal front-end process involves DBC marking of the semiconductor substrate, followed by chip mounting, aluminum wire bonding after one reflow, DBC mounting after a second reflow, followed by a second reflow, and then encapsulation. Ultrasonic soldering of terminals is used for copper wire bonding, followed by a spray coating process. Step 2: Spray coating process. Prepare HIMAL spray coating solution and spray the semiconductor substrate with HIMAL spray coating solution before the encapsulation process is completed. The HIMAL spraying solution comprises 50%-60% 2-butoxyethyl acetate, 30%-40% 1-methyl-2-pyrrolidone, 5%-15% aromatic polyamide-imide resin, and 1%-2.9% additives. The additives are distributed as follows by weight: 1%-10% water, 1%-2% manganese, 0.1%-1% magnesium, 2%-3% titanium, and 2%-5% boron. The additives also include N-acetyl groups. Caprolactam, the N-acetyl Caprolactam accounts for 1%-10% of the total weight of the additives; Step 3: After the spraying process is completed, perform glue pouring and curing.

2. The HIMAL material spraying process for improving IGBT power cycling test according to claim 1, characterized in that: The spraying environment for the aforementioned spraying process should be maintained at a temperature of 15-30℃ and a humidity of 50%-70%.

3. The HIMAL material spraying process for improving IGBT power cycling test according to claim 1, characterized in that: The spraying process includes pre-curing and re-curing in the previous normal process, and the coating thickness after pre-curing and re-curing is 10 μm.

4. The HIMAL material spraying process for improving IGBT power cycling test according to claim 1, characterized in that: The steps for preparing the HIMAL spraying solution are as follows: Step 1: Prepare the raw materials, which include 2-butoxyethyl acetate, 1-methyl-2-pyrrolidone, aromatic polyamide-imide resin and additives; Step 2: Mix and stir the following ingredients according to the following weight ratios: 50%-60% 2-butoxyethyl acetate, 30%-40% 1-methyl-2-pyrrolidone, 5%-15% aromatic polyamide-imide resin, and 1%-2.9% additives. Step 3: Mix and stir for 30-60 minutes to obtain HIMAL spray solution, then pour it into the spray can.

5. The HIMAL material spraying process for improving IGBT power cycling test according to claim 4, characterized in that: The additives include one or more combinations of water, manganese, magnesium, titanium, and boron.

6. The HIMAL material spraying process for improving IGBT power cycling test according to claim 5, characterized in that: The additives are formulated in proportions of 1%-10% water, 1%-2% manganese, 0.1%-1% magnesium, 2%-3% titanium, and 2%-5% boron, respectively, based on the total weight of the additives.

7. The HIMAL material spraying process for improving IGBT power cycling test according to claim 6, characterized in that: The additive also includes N-acetyl groups. Caprolactam, the N-acetyl Caprolactam accounts for 1%-10% of the total weight of the additives.

8. The HIMAL material spraying process for improving IGBT power cycling test according to claim 7, characterized in that: The N-acetyl group Caprolactam was stirred with water, manganese, magnesium, titanium and boron at a temperature of 10-30℃ for 20-30 minutes.

9. HIMAL material prepared by the spraying process according to any one of claims 1-8.

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