Light emitting diode and light emitting device

Abstract

The present application relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode, which comprises a semiconductor stack, a pad electrode, a converging electrode, and a plurality of extension electrodes, the pad electrode is arranged on the semiconductor stack, the converging electrode is arranged on the semiconductor stack and connected to the pad electrode, and the plurality of extension electrodes are all arranged on the semiconductor stack and connected to the converging electrode; viewed from above, the minimum distance from the second extension electrode to the pad electrode is greater than the minimum distance from the first extension electrode to the pad electrode and smaller than the minimum distance from the third extension electrode to the pad electrode, the converging electrode comprises a first region corresponding to the first extension electrode and the second extension electrode and a second region corresponding to the second extension electrode and the third extension electrode, and the width of the first region is greater than the width of the second region. By means of the arrangement, the overall area of the converging electrode can be reduced, the light emitting performance can be improved, the current extension uniformity of the light emitting diode can be improved, and the quality of the light emitting diode can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light-emitting element, typically made of semiconductors such as GaN, GaAs, GaP, and GaAsP. Its core is a PN junction that emits light. LEDs possess advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources available today. LEDs are widely used in lighting, monitoring and command systems, high-definition broadcasting, high-end cinemas, office displays, interactive conferencing, virtual reality, and other fields.

[0003] Vertical light-emitting diodes (LEDs) are obtained by transferring a semiconductor epitaxial stack onto another substrate, such as silicon, silicon carbide, or a metal substrate, and removing the original epitaxial substrate. This process effectively improves the technical problems of light absorption, current congestion, or poor heat dissipation caused by epitaxial substrates. Substrate transfer typically employs a bonding process, primarily metal-to-metal high-temperature, high-pressure bonding, forming a metal bonding layer between one side of the semiconductor epitaxial stack and the substrate. The other side of the semiconductor epitaxial stack provides the light-emitting side, which is equipped with a wire bonding electrode to provide current injection or outflow. The substrate below the semiconductor epitaxial stack provides current inflow or outflow, thus forming an LED where current flows vertically through the semiconductor epitaxial stack.

[0004] Currently, for vertical LEDs, to improve their luminous efficiency, equally spaced extended electrode strips are typically designed to enhance the chip's current spreading capability. When the LED is powered on, the current from all the extended electrode strips converges at the collector electrode. To enable the collector electrode to withstand a large current, it is usually designed as a wide, elongated shape. However, this elongated electrode occupies a large area of ​​the light-emitting region, wasting effective light-emitting area and hindering light extraction, thus reducing the chip's luminous efficiency. Furthermore, the collector electrode is primarily made of precious metals, increasing the cost of the LED.

[0005] It should be noted that the information disclosed in this background section is intended only to enhance the understanding of the overall background of the present invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0006] This invention provides a light-emitting diode (LED) comprising a semiconductor stack, pad electrodes, a converging electrode, a first extended electrode, a second extended electrode, and a third extended electrode. The semiconductor stack has opposing first and second surfaces. The pad electrodes are disposed on the first surface of the semiconductor stack. The converging electrode is disposed on the first surface of the semiconductor stack and connected to the pad electrodes. The first extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. The second extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. The third extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. Viewed from above the semiconductor stack, the minimum spacing between the first extended electrode and the pad electrodes is less than the minimum spacing between the second extended electrode and the pad electrodes, and the minimum spacing between the second extended electrode and the pad electrodes is less than the minimum spacing between the third extended electrode and the pad electrodes. The converging electrode includes a first region and a second region. The first region corresponds between the first and second extended electrodes, and the second region corresponds between the second and third extended electrodes. The width of the first region is greater than the width of the second region.

[0007] The present invention also provides a light-emitting diode, comprising a semiconductor stack, two pad electrodes, a converging electrode, a first extended electrode, a second extended electrode, and a third extended electrode. The semiconductor stack has opposing first and second surfaces. The two pad electrodes are disposed on the first surface of the semiconductor stack. The converging electrode is disposed on the first surface of the semiconductor stack and connected to the pad electrodes. The first extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. The second extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. The third extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode. Viewed from above the LED and looking down at the semiconductor stack, each of the two pad electrodes has a centerline passing through the center point of its respective pad electrode. These two centerlines are named the first centerline and the second centerline. The vertical line segment between the first and second centerlines is the third line segment. A perpendicular line is drawn from the midpoint of the third line segment to the third line segment. The minimum distance from the first extended electrode to the perpendicular line is less than the minimum distance from the second extended electrode to the perpendicular line. The minimum distance from the second extended electrode to the perpendicular line is less than the minimum distance from the third extended electrode to the perpendicular line. The converging electrode includes a first region and a second region. The first region corresponds to the area between the first and second extended electrodes, and the second region corresponds to the area between the second and third extended electrodes. The width of the first region is greater than the width of the second region.

[0008] The present invention also provides a light-emitting device, which employs the light-emitting diode provided in any of the above embodiments.

[0009] An embodiment of the present invention provides a light-emitting diode and a light-emitting device. By setting the width of the converging electrode to gradually decrease along the direction away from the pad electrode, i.e., a gradual converging electrode method, the overall area of ​​the converging electrode can be reduced. This not only increases the effective light-emitting area, which is beneficial for light extraction and improves luminous efficiency, but also ensures uniform current distribution, improving the reliability of the light-emitting diode. Furthermore, it can also save on the manufacturing cost of the light-emitting diode.

[0010] Other features and advantages of the present invention will be set forth in the following description, and some of the technical features and advantages may be apparent from the description or learned by practicing the invention. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, some of the drawings in the following description are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1A This is a top view schematic diagram of the structure of a light-emitting diode provided in an embodiment of the present invention;

[0013] Figure 1B yes Figure 1A Dimensioning diagram;

[0014] Figure 2 It is along Figure 1A A schematic diagram of the cross-sectional structure intercepted by the intercept line FF;

[0015] Figure 3 This is a top view of the structure of a light-emitting diode provided in another embodiment of the present invention;

[0016] Figure 4A This is a top view of the structure of a light-emitting diode provided in another embodiment of the present invention;

[0017] Figure 4B yes Figure 4A Dimensioning diagram;

[0018] Figure 5 This is a top view schematic diagram of the light-emitting diode provided in another embodiment of the present invention.

[0019] Figure label:

[0020] 10-Semiconductor stack; 101-First surface; 102-Second surface; 103-First semiconductor layer; 104-Light-emitting layer; 105-Second semiconductor layer; 12-Pad electrode; 121-Center line; 122-Center point; 14-Converging electrode; 141-First region; 142-Second region; 143-Third region; 21-First extended electrode; 22-Second extended electrode; 23-Third extended electrode; 24-Fourth extended electrode; 40-Insulating layer; 42-Metallic reflective layer; 44-Bonding layer; 46-Substrate; 48-Back electrode; 51-First line segment; 5 2 - Second line segment; 53 - Third line segment; 54 - Perpendicular line; S2 - Minimum spacing between the second extended electrode and the pad electrode; S3 - Minimum spacing between the third extended electrode and the pad electrode; S4 - Shortest distance from the first line segment to the center line; S5 - Shortest distance from the second line segment to the center line; W1 - Width of the first region; W2 - Width of the second region; W3 - Width of the third region; G1 - Width of the first extended electrode; G2 - Width of the second extended electrode; G3 - Width of the third extended electrode; L1 - Length of the first line segment; L2 - Length of the second line segment; D1, D2, D3 - Minimum spacing. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0022] In the description of this invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Additionally, the term "comprising" and any variations thereof mean "at least comprising."

[0023] Please see Figures 1A to 2 , Figure 1A This is a top view schematic diagram of a light-emitting diode provided in an embodiment of the present invention. Figure 1B yes Figure 1A Dimensioning diagram ( Figure 1A and Figure 1B Their structures are exactly the same. Figure 1B Used to clearly illustrate the relationships between distances, lengths, widths, etc. Figure 2 It is along Figure 1A A schematic diagram of the cross-sectional structure cut by the cut-off line FF. To achieve at least one or more of the aforementioned advantages, an embodiment of the present invention provides a light-emitting diode. As shown in the figure, the light-emitting diode includes a semiconductor stack 10, a pad electrode 12, a converging electrode 14, a first extension electrode 21, a second extension electrode 22, and a third extension electrode 23.

[0024] The semiconductor stack 10 has a first surface 101 and a second surface 102 opposite to each other. The semiconductor stack 10 includes a first semiconductor layer 103, a light-emitting layer 104 and a second semiconductor layer 105 in sequence along the direction from the first surface 101 to the second surface 102. The first surface 101 can be a light-emitting surface.

[0025] The first semiconductor layer 103 and the second semiconductor layer 105 can be doped with n-type or p-type doping, respectively, to provide at least electrons or holes. The first semiconductor layer 103 can be doped with n-type dopants such as Si, Ge, or Sn, and the second semiconductor layer 105 can be doped with p-type dopants such as Mg, Zn, Ca, Sr, or Ba. Specifically, the first semiconductor layer 103, the light-emitting layer 104, and the second semiconductor layer 105 can be formed from materials such as aluminum gallium indium nitride, gallium nitride, aluminum gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, gallium arsenide, or aluminum gallium arsenide. The light-emitting layer 104 is the region that provides light radiation by providing electron-hole recombination. Different materials can be selected according to different emission wavelengths. The light-emitting layer 104 can be a periodic structure of a single quantum well or multiple quantum wells. By adjusting the composition ratio of the semiconductor materials in the light-emitting layer 104, it is desired to radiate light of different wavelengths. Optionally, the semiconductor stack 10 is composed of AlGaInP-based, GaAs-based, or GaN-based materials.

[0026] The pad electrode 12 is disposed on the first surface 101 of the semiconductor stack 10. The pad electrode 12 can be formed using a metallic material, such as Cr, Pt, Au, Ni, Ti, Al, etc. The pad electrode 12 can be used for subsequent wire bonding to conduct electricity. It should be noted that in the illustrated embodiment, the pad electrode 12, the converging electrode 14, and the extending electrode are illustrated with different shades, such as the extending electrode being illustrated with a black shade, the converging electrode 14 being illustrated with a cross line, and the pad electrode 12 being illustrated with a slanted line.

[0027] A converging electrode 14 is disposed on the first surface 101 of the semiconductor stack 10 and connected to the pad electrode 12. The converging electrode 14 can be formed using a metallic material, such as Cr, Pt, Au, Ni, Ti, Al, etc. The converging electrode 14 can be used to collect the current conducted by multiple extended electrodes.

[0028] A first extended electrode 21 is disposed on the first surface 101 of the semiconductor stack 10 and connected to the converging electrode 14. A second extended electrode 22 is disposed on the first surface 101 of the semiconductor stack 10 and connected to the converging electrode 14. A third extended electrode 23 is disposed on the first surface 101 of the semiconductor stack 10 and connected to the converging electrode 14. The first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 can be a single-layer structure, a double-layer structure, or a multi-layer structure. The extended electrodes can be made of metallic materials, such as Cr, Pt, Au, Ni, Ti, Al, etc. In some embodiments, when viewed from above the light-emitting diode towards the semiconductor stack 10, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are parallel to each other. When viewed from above the light-emitting diode towards the semiconductor stack 10, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 do not overlap.

[0029] Viewed from above the LED towards the semiconductor stack 10, the minimum spacing between the first extended electrode 21 and the pad electrode 12 (which is 0 in the illustration, but may be >0 in some embodiments) is less than the minimum spacing S2 between the second extended electrode 22 and the pad electrode 12, and the minimum spacing S2 between the second extended electrode 22 and the pad electrode 12 is less than the minimum spacing S3 between the third extended electrode 23 and the pad electrode 12. The converging electrode 14 includes a first region 141 and a second region 142. The first region 141 corresponds to the area between the first extended electrode 21 and the second extended electrode 22, and the second region 142 corresponds to the area between the second extended electrode 22 and the third extended electrode 23. Taking the first region 141 as an example, the correspondence means that, for example, in the top view of the figure, the converging electrode 14 located between the line containing the first extended electrode 21 and the line containing the second extended electrode 22 is the first region 141; similarly, the converging electrode 14 located between the line containing the second extended electrode 22 and the line containing the third extended electrode 23 is the second region 142.

[0030] Compared to traditional wide, elongated converging electrodes, this invention employs a gradually narrowing converging electrode 14. The width of the converging electrode 14 gradually decreases along the direction away from the pad electrode 12, meaning the width W1 of the first region 141 is greater than the width W2 of the second region 142. This not only reduces the overall area of ​​the converging electrode 14 and increases the effective light-emitting area, which is beneficial for light extraction and improves luminous efficiency, but also ensures uniform current distribution, improving the reliability of the light-emitting diode. Furthermore, it saves on the manufacturing cost of the light-emitting diode. It should be noted that the converging electrode 14 in the illustrated embodiment has a stepped gradually narrowing width; however, this invention is not limited to this. In some embodiments, the converging electrode 14 may also employ a linearly narrowing or other forms of gradually narrowing width. When a linearly narrowing width is used, such as... Figure 3 As shown ( Figure 3 Only the width W1 of the first region 141 and the width W2 of the second region 142 are marked; the rest can be referenced. Figure 1A , Figure 1B In this case, the width W1 of the first region 141 can refer to the maximum width of the converging electrode 14 between the first extended electrode 21 and the second extended electrode 22, and the width W2 of the second region 142 can refer to the maximum width of the converging electrode 14 between the second extended electrode 22 and the third extended electrode 23.

[0031] In some embodiments, the width W1 of the first region 141 is 1.05 to 2 times the width W2 of the second region 142, which can further improve the current spreading capability and enhance the quality of the light-emitting diode. Optionally, the width W1 of the first region 141 can be 10 to 30 μm, preferably 20 μm, and the width W2 of the second region 142 can be 5 to 25 μm, preferably 15 μm.

[0032] In some embodiments, viewed from above the light-emitting diode and over the semiconductor stack 10, the first extended electrode 21 is vertically connected to the converging electrode 14, the second extended electrode 22 is vertically connected to the converging electrode 14, and the third extended electrode 23 is vertically connected to the converging electrode 14. Viewed from above the light-emitting diode and over the semiconductor stack 10, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are located on the same side of the pad electrode 12. However, this embodiment is not limited to this; the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 may also be located on different sides of the pad electrode 12.

[0033] In some embodiments, when viewed from above the light-emitting diode toward the semiconductor stack 10, the area of ​​the converging electrode 14 accounts for 1 to 10% of the area of ​​the semiconductor stack 10. This reduces the overall area of ​​the converging electrode 14, which not only increases the effective light-emitting area, which is beneficial for light extraction and improves luminous efficiency, but also saves on the manufacturing cost of the light-emitting diode.

[0034] In some embodiments, viewed from above the light-emitting diode towards the semiconductor stack 10, the pad electrode 12 has a center line 121 (shown as a dashed line in the figure), which passes through the center point 122 of the pad electrode 12. The first extended electrode 21 is parallel to the center line 121, the second extended electrode 22 is parallel to the center line 121, and the third extended electrode 23 is parallel to the center line 121. In actual fabrication, due to the influence of fabrication errors, this parallelism is not absolute. Rather, it means that the first extended electrode 21, the center line 121, the second extended electrode 22, and the third extended electrode 23 are generally parallel to each other. For example, an angle of less than 5 degrees between the first extended electrode 21 and the center line 121 can also be considered parallel.

[0035] Compared to the traditional method of gradually varying the width of the extended electrodes near the pad electrode 12, this invention addresses the issue that when the LED is energized, the current concentrates closer to the center line 121 of the pad electrode 12, resulting in a higher current intensity on the extended electrodes near the center line 121, which can easily cause metal migration or burn-in. This invention improves the current spreading performance of the LED and enhances its current carrying capacity by increasing the width of the extended electrodes near the center line 121 of the pad electrode 12. Specifically, the width G1 of the first extended electrode 21 is greater than the width G2 of the second extended electrode 22, and the width G2 of the second extended electrode 22 is greater than the width G3 of the third extended electrode 23. This prevents current from accumulating near the center line 121 of the pad electrode 12, thus avoiding the high current intensity on the extended electrodes that could cause metal migration or burn-in. The width G3 of the first extended electrode 21, the second extended electrode 22 and the third extended electrode 23 can be substantially constant, or it can be a width that gradually decreases in the direction away from the pad electrode 12. In the case of gradual decrease, the width G1 of the first extended electrode 21 and the width G2 of the second extended electrode 22 being compared refer to the width in the same direction, as shown by drawing a horizontal line through the respective widths of the first extended electrode 21 and the second extended electrode 22 in the figure.

[0036] In some embodiments, the width G1 of the first extended electrode 21 is 1.05 to 2 times the width G2 of the second extended electrode 22, which can further improve the current spreading capability and improve the quality of the light-emitting diode. Optionally, the width G1 of the first extended electrode 21 can be 5-15 μm, preferably 8 μm, and the width G2 of the second extended electrode 22 can be 4-10 μm, preferably 7 μm.

[0037] In some embodiments, viewed from above the light-emitting diode and over the semiconductor stack 10, the pad electrode 12 has a centerline 121 passing through the center point 122 of the pad electrode 12. The first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are all parallel to the centerline 121. A vertical line connecting the first extended electrode 21 and the second extended electrode 22 is defined as a first line segment 51, and a vertical line connecting the second extended electrode 22 and the third extended electrode 23 is defined as a second line segment 52. The shortest distance S4 from the first line segment 51 to the centerline 121 is less than the shortest distance S5 from the second line segment 52 to the centerline 121, and the length L1 of the first line segment 51 is greater than the length L2 of the second line segment 52. This embodiment improves the uniformity of current spreading by increasing the spacing between two adjacent extended electrodes near the center line 121 of the pad electrode 12, thus preventing current from accumulating near the center line 121 of the pad electrode 12, which would result in a large current intensity on the extended electrodes, causing metal migration or burning. In some embodiments, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are elongated. In some embodiments, viewed from above the light-emitting diode towards the semiconductor stack 10, the first extended electrode 21 and the second extended electrode 22 may be located on the same side of the center line 121, or they may be distributed on the left and right sides of the center line 121.

[0038] In some embodiments, when viewed from above the light-emitting diode towards the semiconductor stack 10, the pad electrode 12 can be circular, elliptical, nearly circular, polygonal, or irregular in shape. When the pad electrode 12 is square or rectangular, the midpoint is the intersection of the diagonals; when the pad electrode 12 is elliptical or nearly circular, the midpoint is the center point; when the pad electrode 12 is more polygonal or irregular in shape, the midpoint is its center point 122. In some embodiments, the pad electrode 12 can be disposed on the side of the semiconductor stack 10 or in the middle of the semiconductor stack 10.

[0039] The light-emitting diode also includes an insulating layer 40, a metal reflective layer 42, a bonding layer 44, a substrate 46, and a back electrode 48. In some embodiments, the light-emitting diode is a vertical light-emitting diode.

[0040] An insulating layer 40 is disposed on the second surface 102 of the semiconductor stack 10. The insulating layer 40 has multiple through holes that expose the semiconductor stack 10. The insulating layer 40 is light-transmitting. The material of the insulating layer 40 may include transparent compounds such as silicon nitride, silicon oxide, and titanium oxide, as well as their stacked combinations. For example, it may be a Bragg mirror (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0041] A metal reflective layer 42 is disposed on the side of the insulating layer 40 away from the semiconductor stack 10, and the metal reflective layer 42 is connected to the semiconductor stack 10 through a via. The metal reflective layer 42 can be made of a metal material. The metal reflective layer 42 can have a reflectivity of % or more, and can be formed of a metal or alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Ti, Cr, Zn, Pt, Au, and Hf. This metal reflective layer 42 can reflect light radiated from the semiconductor stack 10 toward the substrate 46 back to the semiconductor stack 10, and radiate it out from the first surface 101 side, which serves as the light-emitting surface.

[0042] A bonding layer 44 is disposed on the side of the metal reflective layer 42 away from the semiconductor stack 10. The bonding layer 44 is used to bond the substrate 46 and the metal reflective layer 42, improving the overall structural connection strength. The bonding layer 44 can be made of metal elements such as gold, tin, titanium, tungsten, nickel, platinum, indium, etc., and can be a single-layer structure or a multi-layer structure, or a combination of various materials.

[0043] The substrate 46 is disposed on the side of the bonding layer 44 away from the semiconductor stack 10. The substrate 46 is a conductive substrate, which can be silicon, silicon carbide, or a metal substrate, preferably copper, tungsten, copper-tungsten, or molybdenum. To provide sufficient mechanical strength to support the semiconductor stack 10, the thickness of the substrate 46 can be greater than μm. In this embodiment, the substrate 46 is a silicon substrate or a CuW substrate.

[0044] The back electrode 48 is disposed on the side of the substrate 46 away from the semiconductor stack 10. The back electrode 48 may be made of metal.

[0045] In some embodiments, with Figure 1A , Figure 1B For example, the illustration shows eight extended electrodes from left to right (named sequentially as left 1, left 2, left 3, left 4, right 4, right 3, right 2, and right 1). For ease of understanding, the extended electrodes are arranged in a symmetrical order in the accompanying drawings, but this is not a limitation in practice. In some embodiments, the multiple extended electrodes may be arranged asymmetrically from left to right. For example, the first extended electrode is located on... Figure 1A The second extended electrode is located at the fourth position from the left. Figure 1A The third extended electrode is located at the second position from the right. Figure 1A At the rightmost position, the first region 141 still corresponds to the region between the first extended electrode and the second extended electrode, and its width is still greater than the width of the region between the second extended electrode and the third extended electrode.

[0046] In some embodiments, the light-emitting diode may further include more extended electrodes, such as the Nth extended electrode, the (N+1)th extended electrode, etc., parallel to the second extended electrode 22, where N can be ≥ 3. The shortest distance between the Nth extended electrode and the center line 121 is smaller than the shortest distance between the (N+1)th extended electrode and the center line 121, meaning the Nth extended electrode is closer to the center line 121 than the (N+1)th extended electrode. Therefore, the width of the Nth extended electrode is larger than the width of the (N+1)th extended electrode, i.e., G... N >G N+1 For example, it can be 1.05 to 2 times larger. Similarly, more extended electrodes mean forming more regions, for example, Figure 1A and Figure 1B In the middle, the region 143 between the fourth extended electrode 24 and the third extended electrode 23 has a width of W3, so W3 < W2 < W1. Similarly, the Nth extended electrode and the (N+1)th extended electrode form the Nth region, so the width of the Nth region is W. N Width W of the (N-1)th region N-1 Small, that is, W N <W N-1 Similarly, more extended electrodes mean more extended electrode spacing. For example, the first segment length L1 between the second extended electrode 22 and the first extended electrode 21, and the second segment length L2 between the second extended electrode 22 and the third extended electrode 23, can be extended to include the Nth segment between the Nth extended electrode and the (N+1)th extended electrode, etc. The relationship between the lengths of the Nth segment and the (N-1)th segment continues according to the relationship between the lengths of the second segment and the first segment, i.e., L... N-1 >L N .

[0047] Please see Figure 4A and Figure 4B , Figure 4A This is a top view schematic diagram of a light-emitting diode provided in another embodiment of the present invention. Figure 4B yes Figure 4A A dimensioned diagram. Compared to Figure 1AThe main difference in this embodiment of the light-emitting diode is that there are two pad electrodes 12. In this embodiment, viewed from above, the two pad electrodes 12 are distributed on the top and bottom sides. Each pad electrode 12 has its own center line 121, and each center line 121 passes through the center point 122 of its respective pad electrode 12. The two center lines 121 are named the first center line and the second center line respectively (the left side is the first center line and the right side is the second center line in the figure). The vertical line segment between the first center line and the second center line is the third line segment 53. A perpendicular line 54 is drawn through the midpoint of the third line segment 53, perpendicular to the third line segment 53. This perpendicular line 54 is parallel to the center line 121. The minimum distance D1 between the first extended electrode 21 and the perpendicular line 54 is less than the minimum distance D2 between the second extended electrode 22 and the perpendicular line 54. The minimum distance D2 between the second extended electrode 22 and the perpendicular line 54 is less than the minimum distance D3 between the third extended electrode 23 and the perpendicular line 54. The converging electrode 14 also includes a first region 141 and a second region 142. The first region 141 corresponds to the area between the first extended electrode 21 and the second extended electrode 22, and the second region 142 corresponds to the area between the second extended electrode 22 and the third extended electrode 23. The width W1 of the first region 141 is greater than the width W2 of the second region 142. Compared with the traditional wide and long strip-shaped converging electrode, the present invention adopts a converging electrode 14 with a gradually decreasing width. The width of the converging electrode 14 gradually decreases along the direction away from the pad electrode 12, that is, the width W1 of the first region 141 is greater than the width W2 of the second region 142. In this way, not only can the overall area of ​​the converging electrode 14 be reduced, but the effective light-emitting area can also be increased, which is beneficial to light extraction and improves luminous efficiency. At the same time, it can also ensure the uniformity of current spread and improve the reliability of the light-emitting diode. It can also save the manufacturing cost of the light-emitting diode. Optionally, the width W1 of the first region 141 is 1.05 to 2 times the width W2 of the second region 142.

[0048] In some embodiments, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are parallel to the perpendicular line 54. The width G1 of the first extended electrode 21 is greater than the width G2 of the second extended electrode 22, and the width G2 of the second extended electrode 22 is greater than the width G3 of the third extended electrode 23. In some embodiments, the first extended electrode 21, the second extended electrode 22, and the third extended electrode 23 are parallel to each other.

[0049] In some embodiments, such as Figure 5 As shown, compared to Figure 4A The main difference in this embodiment of the light-emitting diode is that the two pad electrodes 12 are distributed on the same side, such as on the lower side.

[0050] One embodiment of the present invention provides a light-emitting device including a light-emitting diode (LED), wherein the LED is an LED as described in any of the foregoing embodiments. The LED can be mounted on a circuit board.

[0051] In summary, the light-emitting diode and light-emitting device provided in one embodiment of the present invention, by setting the width of the converging electrode 14 to gradually decrease along the direction away from the pad electrode 12, i.e., the gradual decrease in the width of the converging electrode 14, can reduce the overall area of ​​the converging electrode 14. This not only increases the effective light-emitting area, which is beneficial for light extraction and improves luminous efficiency, but also ensures uniform current distribution, improving the reliability of the light-emitting diode. Furthermore, it can also save on the manufacturing cost of the light-emitting diode.

[0052] Furthermore, those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of the present invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or the background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting diode, characterized in that: The light-emitting diode includes: A semiconductor stack having opposing first and second surfaces; The pad electrode is disposed on the first surface of the semiconductor stack; A converging electrode is disposed on the first surface of the semiconductor stack and connected to the pad electrode; A first extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; The second extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; A third extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; Viewed from above the light-emitting diode toward the semiconductor stack, the minimum spacing between the first extended electrode and the pad electrode is less than the minimum spacing between the second extended electrode and the pad electrode, the minimum spacing between the second extended electrode and the pad electrode is less than the minimum spacing between the third extended electrode and the pad electrode, and the converging electrode includes a first region and a second region, the first region corresponding to the space between the first extended electrode and the second extended electrode, the second region corresponding to the space between the second extended electrode and the third extended electrode, and the width of the first region is greater than the width of the second region; Viewed from above the light-emitting diode toward the semiconductor stack, the pad electrode has a centerline passing through the center point of the pad electrode. The first extended electrode is parallel to the centerline, the second extended electrode is parallel to the centerline, and the third extended electrode is parallel to the centerline. The width of the first extended electrode is greater than the width of the second extended electrode, and the width of the second extended electrode is greater than the width of the third extended electrode.

2. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the first extended electrode, the second extended electrode, and the third extended electrode are parallel to each other.

3. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the first extended electrode is perpendicularly connected to the converging electrode, the second extended electrode is perpendicularly connected to the converging electrode, and the third extended electrode is perpendicularly connected to the converging electrode.

4. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the first extended electrode, the second extended electrode, and the third extended electrode are located on the same side of the pad electrode.

5. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the first extended electrode, the second extended electrode, and the third extended electrode do not overlap.

6. The light-emitting diode according to claim 1, characterized in that: The width of the first region is 1.05 to 2 times the width of the second region.

7. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode towards the semiconductor stack, the pad electrode has a centerline passing through the center point of the pad electrode. The first extended electrode is parallel to the centerline, the second extended electrode is parallel to the centerline, and the third extended electrode is parallel to the centerline. A vertical line connecting the first and second extended electrodes is defined as a first line segment, and a vertical line connecting the second and third extended electrodes is defined as a second line segment. The shortest distance from the first line segment to the centerline is less than the shortest distance from the second line segment to the centerline, and the length of the first line segment is greater than the length of the second line segment.

8. The light-emitting diode according to claim 1, characterized in that: The light-emitting diode further includes an insulating layer, a metal reflective layer, a bonding layer, a substrate, and a back electrode. The insulating layer is disposed on the second surface of the semiconductor stack and has a plurality of through holes that expose the semiconductor stack. The metal reflective layer is disposed on the side of the insulating layer away from the semiconductor stack and is connected to the semiconductor stack through the through holes. The bonding layer is disposed on the side of the metal reflective layer away from the semiconductor stack. The substrate is disposed on the side of the bonding layer away from the semiconductor stack, and the back electrode is disposed on the side of the substrate away from the semiconductor stack.

9. The light-emitting diode according to claim 1, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the area of ​​the converging electrode occupies 1 to 10% of the area of ​​the semiconductor stack.

10. A light-emitting diode, characterized in that: The light-emitting diode includes: A semiconductor stack having opposing first and second surfaces; Two pad electrodes are disposed on the first surface of the semiconductor stack; A converging electrode is disposed on the first surface of the semiconductor stack and connected to the pad electrode; A first extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; The second extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; A third extended electrode is disposed on the first surface of the semiconductor stack and connected to the converging electrode; Viewed from above the light-emitting diode towards the semiconductor stack, each of the two pad electrodes has a centerline passing through the center point of its respective pad electrode. These two centerlines are named the first centerline and the second centerline. The vertical line segment between the first centerline and the second centerline is a third line segment. A perpendicular line is drawn from the midpoint of the third line segment to the third line segment. The minimum distance from the first extended electrode to the perpendicular line is less than the minimum distance from the second extended electrode to the perpendicular line, and the minimum distance from the second extended electrode to the perpendicular line is less than the minimum distance from the third extended electrode to the perpendicular line. The converging electrode includes a first region and a second region. The first region corresponds to the area between the first extended electrode and the second extended electrode, and the second region corresponds to the area between the second extended electrode and the third extended electrode. The width of the first region is greater than the width of the second region. The first extended electrode is parallel to the vertical line, the second extended electrode is parallel to the vertical line, and the third extended electrode is parallel to the vertical line. The width of the first extended electrode is greater than the width of the second extended electrode, and the width of the second extended electrode is greater than the width of the third extended electrode.

11. The light-emitting diode according to claim 10, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the first extended electrode, the second extended electrode, and the third extended electrode are parallel to each other.

12. The light-emitting diode according to claim 10, characterized in that: The width of the first region is 1.05 to 2 times the width of the second region.

13. The light-emitting diode according to claim 10, characterized in that: Viewed from above the light-emitting diode toward the semiconductor stack, the area of ​​the converging electrode occupies 1 to 10% of the area of ​​the semiconductor stack.

14. A light-emitting device, characterized in that: The light-emitting device includes a light-emitting diode, and the light-emitting diode is the light-emitting diode as described in any one of claims 1 to 13.

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