Organic light-emitting transistor, preparation method thereof, display panel and display device

Abstract

The application provides an organic light-emitting transistor and a preparation method thereof, a display panel and a display device. The organic light-emitting transistor comprises a substrate, an auxiliary gate electrode, a first gate insulating layer, a source electrode and a drain electrode, an organic semiconductor layer, a second gate insulating layer and a control gate electrode. The auxiliary gate electrode is located on one side of the substrate. The first gate insulating layer is located on the side, away from the substrate, of the auxiliary gate electrode. The source electrode and the drain electrode are located on the side, away from the substrate, of the first gate insulating layer. The organic semiconductor layer is located on the side, away from the substrate, of the first gate insulating layer. The second gate insulating layer is located on the side, away from the substrate, of the organic semiconductor layer. The control gate electrode is located on the side, away from the substrate, of the second gate insulating layer. The auxiliary gate electrode is used for regulating the electrical properties of the organic light-emitting transistor. The organic light-emitting transistor provided by the application can avoid the capture of electrons in the organic semiconductor layer by the interface between the first gate insulating layer and the organic semiconductor layer, ensure the stability of the current in the working process of the device, and avoid the occurrence of brightness fluctuation.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to an organic light-emitting transistor and its fabrication method, a display panel, and a display device. Background Technology

[0002] Organic light-emitting transistors (OLETs) are a new type of multifunctional optoelectronic device that combines the electrical switching function of field-effect transistors (FETs) with the light-emitting characteristics of light-emitting diodes (LEDs). Due to their simple manufacturing process and low potential cost, these devices are expected to become strong competitors for next-generation flat panel display technology.

[0003] However, the performance of current organic light-emitting transistor (OLED) display products needs improvement. Summary of the Invention

[0004] In view of this, the purpose of this application is to propose an organic light-emitting transistor that is beneficial to improving the current stability during device operation, reducing brightness fluctuations, and improving device performance.

[0005] To achieve the above objectives, this application provides an organic light-emitting transistor (OLED), which includes:

[0006] Substrate;

[0007] An auxiliary gate, the auxiliary gate being located on one side of the substrate;

[0008] A first gate insulating layer is located on the side of the auxiliary gate away from the substrate;

[0009] The source and the drain are located on the side of the first gate insulating layer away from the substrate;

[0010] An organic semiconductor layer, wherein the organic semiconductor layer is located on the side of the first gate insulating layer away from the substrate;

[0011] A second gate insulating layer is located on the side of the organic semiconductor layer away from the substrate;

[0012] A control gate, the control gate being located on the side of the second gate insulating layer away from the substrate;

[0013] The auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor.

[0014] In one embodiment, the auxiliary gate is used to receive a control voltage, which is used to control the distribution of electrons and holes in the channel to regulate the electrical properties of the organic light-emitting transistor.

[0015] In one embodiment, the control voltage is greater than the gate voltage of the control gate;

[0016] In one embodiment, the regulating voltage is a constant value.

[0017] In one embodiment, the source and drain are spaced apart and partially cover the side of the first gate insulating layer away from the substrate, a portion of the organic semiconductor layer covers the side of the source and drain away from the substrate, and a portion of the organic semiconductor layer covers the area of ​​the first gate insulating layer not covered by the source and drain.

[0018] In one embodiment, the material of the auxiliary gate includes at least one of aluminum, molybdenum, copper, or ITO;

[0019] In one embodiment, the source electrode is made of at least one of aluminum, molybdenum, copper, or ITO; the drain electrode is made of at least one of aluminum, molybdenum, copper, or ITO.

[0020] In one embodiment, the material of the first gate insulating layer includes at least one of silicon oxide and hafnium dioxide;

[0021] In one embodiment, the material of the second gate insulating layer includes hafnium dioxide;

[0022] In one embodiment, the material of the second gate insulating layer is different from the material of the first gate insulating layer.

[0023] In one embodiment, the control gate comprises a transparent conductive material;

[0024] In one embodiment, the transparent conductive material comprises indium tin oxide;

[0025] In one embodiment, the organic semiconductor layer comprises an organic light-emitting material;

[0026] In one embodiment, the organic light-emitting material includes at least one of Alq3 and C8-BTBT.

[0027] Based on the same inventive concept, this application also discloses a method for fabricating an organic light-emitting transistor, which includes:

[0028] A substrate is provided, and an auxiliary gate is formed on one side of the substrate; wherein the auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor.

[0029] A first gate insulating layer is formed on the side of the auxiliary gate away from the substrate;

[0030] The source and drain are formed on the side of the first gate insulating layer away from the substrate;

[0031] An organic semiconductor layer is formed on the side of the first gate insulating layer away from the substrate;

[0032] A second gate insulating layer is formed on the side of the organic semiconductor layer away from the substrate;

[0033] A control gate is formed on the side of the second gate insulating layer away from the substrate.

[0034] In one embodiment, the auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor, including:

[0035] The auxiliary gate is used to receive a control voltage, which is used to control the distribution of electrons and holes in the channel, so as to regulate the electrical properties of the organic light-emitting transistor.

[0036] In one embodiment, the control voltage is greater than the gate voltage of the control gate;

[0037] In one embodiment, the regulating voltage is a constant value.

[0038] Based on the same inventive concept, this application also discloses a display panel that includes the organic light-emitting transistors described in any of the above claims.

[0039] Based on the same inventive concept, this application also discloses a display device, which includes the above-described display panel.

[0040] Compared with the prior art, the organic light-emitting transistor provided in this application provides an auxiliary gate on the side of the organic semiconductor layer away from the control gate. The electrical properties of the organic light-emitting transistor are regulated by the auxiliary gate, which prevents electrons in the organic semiconductor layer from being captured by the interface between the first gate insulating layer and the organic semiconductor layer. This ensures stable current during device operation and avoids brightness fluctuations, thereby effectively improving the display performance of the device. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the layer structure of a related organic light-emitting transistor;

[0043] Figure 2 A schematic diagram of the layer structure of an organic light-emitting transistor provided in an embodiment of this application;

[0044] Figure 3 A schematic diagram of the layer structure of an organic light-emitting transistor provided in another embodiment of this application;

[0045] Figure 4 A flowchart illustrating a method for fabricating an organic light-emitting transistor according to another embodiment of this application;

[0046] Figure 5 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 1 ;

[0047] Figure 6 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 2 ;

[0048] Figure 7 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 3 ;

[0049] Figure 8 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 4 ;

[0050] Figure 9 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 5 ;

[0051] Figure 10 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 6 ;

[0052] Figure 11 A schematic diagram of the fabrication method of an organic light-emitting transistor provided in another embodiment of this application. Figure 7 .

[0053] Marker explanation:

[0054] 100. Organic light-emitting transistor; 101. Electron; 102. Hole;

[0055] 1. Substrate; 11. First conductive layer; 2. Auxiliary gate; 21. Second conductive layer; 3. First gate insulating layer; 4. Source; 5. Drain; 6. Organic semiconductor layer; 7. Second gate insulating layer; 8. Control gate. Detailed Implementation

[0056] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0057] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0058] Reference Figure 1 As shown, an organic light-emitting transistor 100 includes an organic semiconductor layer 6, a first gate insulating layer 3 is disposed on one side of the organic semiconductor layer 6, a control gate 8 is disposed on the side of the first gate insulating layer 3 away from the organic semiconductor layer 6, and a source 4 and a drain 5 are disposed on the side of the organic semiconductor layer 6 away from the first gate insulating layer 3.

[0059] During operation, under the influence of the gate voltage and the source-drain voltage, holes 102 and electrons 101 are injected into the organic semiconductor layer 6 from the source 4 and drain 5, respectively. The diffused charge carriers in the organic semiconductor material meet to form excitons. Subsequently, some of the formed excitons recombine, radiating light within the device's channel. By adjusting the gate voltage of the control gate 8, the luminous intensity and current density of the device can be changed.

[0060] Through long-term research, the inventors discovered that the current organic light-emitting transistor 100 has a problem of poor stability. It is prone to changes in operating current due to threshold voltage (Vth) deviation, which leads to brightness fluctuations and makes it impossible to achieve mass production.

[0061] Specifically, since the display screen changes dynamically when the device is working, the gate voltage of the control gate 8 also changes dynamically. This causes some electrons in the organic semiconductor layer 6 to be captured at the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, thereby affecting the light emission stability of the organic light-emitting transistor 100.

[0062] Based on this, this application provides an organic light-emitting transistor solution to solve the above problems.

[0063] Please refer to Figure 2 As shown, an embodiment of this application provides an organic light-emitting transistor 100, which includes a substrate 1, an auxiliary gate 2, a first gate insulating layer 3, a source 4, a drain 5, an organic semiconductor layer 6, a second gate insulating layer 7, and a control gate 8.

[0064] The auxiliary gate 2 is located on one side of the substrate 1, the first gate insulating layer 3 is located on the side of the auxiliary gate 2 away from the substrate 1, the source 4 and the drain 5 are located on the side of the first gate insulating layer 3 away from the substrate 1, the organic semiconductor layer 6 is located on the side of the first gate insulating layer 3 away from the substrate 1, the second gate insulating layer 7 is located on the side of the organic semiconductor layer 6 away from the substrate 1, and the control gate 8 is located on the side of the second gate insulating layer 7 away from the substrate 1; wherein, the auxiliary gate 2 is used to regulate the electrical properties of the organic light-emitting transistor 100.

[0065] The control gate 8 has the following main functions: First, it regulates the charge distribution and current magnitude within the channel by applying a gate voltage, thereby effectively controlling the device's conductivity. Second, it affects the injection and transport efficiency of charge carriers (electrons and holes), thus indirectly regulating the formation and recombination processes of excitons in the organic semiconductor layer 6, thereby adjusting and controlling luminous characteristics such as luminous intensity and luminous efficiency. Third, it determines the device's switching characteristics to a certain extent, enabling the organic light-emitting transistor 100 to switch between on and off states as needed to meet different application requirements.

[0066] The organic light-emitting transistor 100 provided in this embodiment has an auxiliary gate 2 provided on the side of the organic semiconductor layer 6 away from the control gate 8. The auxiliary gate 2 regulates the electrical properties of the organic light-emitting transistor 100, preventing electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6. This ensures stable current during device operation, avoids brightness fluctuations, and effectively improves the display performance of the device.

[0067] In one embodiment, the auxiliary gate 2 is used to receive a control voltage, which is used to regulate the distribution of electrons 101 and holes 102 in the channel to regulate the electrical properties of the organic light-emitting transistor 100. The control voltage can suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6, thereby preventing electrons in the organic semiconductor layer 6 from being captured at the interface between the first gate insulating layer 3 and the organic semiconductor layer 6.

[0068] Preferably, the control voltage is a constant value, as a constant control voltage can better suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6. Preferably, the control voltage is greater than the gate voltage controlling the gate 8, which can further improve the suppression effect. Here, the gate voltage is dynamically changing, and the control voltage is greater than the maximum value of the gate voltage, thereby better suppressing the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6.

[0069] Please continue to refer to Figure 2 As shown, in one embodiment, the source electrode 4 and drain electrode 5 are spaced apart and partially cover the side of the first gate insulating layer 3 away from the substrate 1. A portion of the organic semiconductor layer 6 covers the side of the source electrode 4 and drain electrode 5 away from the substrate 1, and also covers the area of ​​the first gate insulating layer 3 not covered by the source electrode 4 and drain electrode 5. This helps ensure the flatness of the organic semiconductor layer 6 on the side away from the substrate 1, facilitating the fabrication of the second gate insulating layer 7. Please refer to... Figure 3 As shown, in another embodiment, the organic semiconductor layer 6 covers the side of the source electrode 4 and the drain electrode 5 away from the substrate 1, and the second gate insulating layer 7 covers the organic semiconductor layer 6, the source electrode 4 and the drain electrode 5 away from the substrate 1.

[0070] In one embodiment, the auxiliary gate 2 is made of a metal oxide such as aluminum, molybdenum, copper, or ITO to ensure good conductivity, thereby ensuring the performance of the organic light-emitting transistor 100.

[0071] In one embodiment, the source electrode 4 is made of a medium metal oxide such as aluminum, molybdenum, copper or ITO, and the drain electrode 5 is made of a medium metal oxide such as aluminum, molybdenum, copper or ITO, to ensure good conductivity and thus ensure the performance of the organic light-emitting transistor 100.

[0072] In one embodiment, the material of the first gate insulating layer 3 is a conventional insulating material such as silicon oxide, or it can be a material with a high dielectric constant such as hafnium dioxide.

[0073] In one embodiment, the second gate insulating layer 7 is made of hafnium dioxide, preferably a material with a high dielectric constant, to ensure the performance of the organic light-emitting transistor 100. The material of the second gate insulating layer 7 may be the same as or different from the material of the first gate insulating layer 3.

[0074] In one embodiment, the control gate 8 comprises a transparent conductive material, which ensures conductivity while avoiding affecting light emission, allowing the organic light-emitting transistor 100 to emit light from the side of the control gate 8 away from the substrate 1. Preferably, the transparent conductive material is indium tin oxide or the like.

[0075] Preferably, the organic semiconductor layer 6 includes an organic light-emitting material, such as Alq3 or C8-BTBT.

[0076] Reference Figure 4 As shown, another embodiment of this application discloses a method for fabricating an organic light-emitting transistor (OLED), which includes the following steps:

[0077] Step S10: Provide a substrate 1, and form an auxiliary gate 2 on one side of the substrate 1; wherein the auxiliary gate 2 is used to regulate the electrical properties of the organic light-emitting transistor 100.

[0078] Specifically, step S10 includes: first forming a first conductive layer 11 on one side of the substrate 1, referring to... Figure 5 As shown; then the first conductive layer 11 is patterned to form the auxiliary gate 2, as shown in the figure. Figure 6 .

[0079] Preferably, the material of the first conductive layer 11 is a metal oxide such as aluminum, molybdenum, copper or ITO, to ensure good conductivity of the auxiliary gate 2, thereby ensuring the performance of the organic light-emitting transistor 100.

[0080] Step S20: A first gate insulating layer 3 is formed on the side of the auxiliary gate 2 away from the substrate 1, referring to... Figure 7 .

[0081] Preferably, the material of the first gate insulating layer 3 is a conventional insulating material such as silicon oxide, or it can be a material with a high dielectric constant such as hafnium dioxide.

[0082] Step S30: Form the source 4 and drain 5 on the side of the first gate insulating layer 3 away from the substrate 1;

[0083] Specifically, step S30 includes: first forming a second conductive layer 21 on the side of the first gate insulating layer 3 away from the substrate 1, referring to... Figure 8 As shown; then the second conductive layer 21 is patterned to form the source 4 and drain 5, as shown in the figure. Figure 9 .

[0084] Preferably, the material of the second conductive layer 21 is a medium metal oxide such as aluminum, molybdenum, copper or ITO, to ensure good conductivity of the source 4 and drain 5, thereby ensuring the performance of the organic light-emitting transistor 100.

[0085] Step S40: An organic semiconductor layer 6 is formed on the side of the first gate insulating layer 3 away from the substrate 1, referring to... Figure 10 .

[0086] Preferably, the organic semiconductor layer 6 includes an organic light-emitting material, such as Alq3 or C8-BTBT.

[0087] Step S50: A second gate insulating layer 7 is formed on the side of the organic semiconductor layer 6 away from the substrate 1, referring to... Figure 11 .

[0088] Preferably, the material of the second gate insulating layer 7 is hafnium dioxide, and materials with high dielectric constants are preferred to ensure the performance of the organic light-emitting transistor 100. The material of the second gate insulating layer 7 may be the same as or different from the material of the first gate insulating layer 3.

[0089] Step S60: A control gate 8 is formed on the side of the second gate insulating layer 7 away from the substrate 1, referring to... Figure 2 .

[0090] Preferably, the control gate 8 comprises a transparent conductive material, which ensures conductivity while avoiding affecting light emission, allowing the organic light-emitting transistor 100 to emit light from the side of the control gate 8 away from the substrate 1. Preferably, the transparent conductive material is indium tin oxide or the like.

[0091] The method for fabricating an organic light-emitting transistor provided in this embodiment involves setting an auxiliary gate 2 on the side of the organic semiconductor layer 6 away from the control gate 8. The electrical properties of the organic light-emitting transistor 100 are regulated by the auxiliary gate 2, which prevents electrons in the organic semiconductor layer 6 from being captured at the interface between the first gate insulating layer 3 and the organic semiconductor layer 6. This ensures stable current during device operation, avoids brightness fluctuations, and effectively improves the display performance of the device.

[0092] In one embodiment, in step S10, the auxiliary gate 2 is used to regulate the electrical properties of the organic light-emitting transistor 100, including: the auxiliary gate 2 receiving a regulation voltage, which is used to regulate the distribution of electrons 101 and holes 102 in the channel, thereby regulating the electrical properties of the organic light-emitting transistor 100. The regulation voltage can suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6, thereby preventing electrons in the organic semiconductor layer 6 from being captured at the interface between the first gate insulating layer 3 and the organic semiconductor layer 6.

[0093] Preferably, the control voltage is a constant value, as a constant control voltage can better suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6. Preferably, the control voltage is greater than the gate voltage controlling the gate 8, which can further improve the suppression effect. Here, the gate voltage is dynamically changing, and the control voltage is greater than the maximum value of the gate voltage, thereby better suppressing the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer 6.

[0094] Another embodiment of this application provides a display panel that includes the organic light-emitting transistor 100 described above.

[0095] The display panel provided in this embodiment has an organic light-emitting transistor 100 with an auxiliary gate 2 disposed on the side of the organic semiconductor layer 6 away from the control gate 8. The auxiliary gate 2 regulates the electrical properties of the organic light-emitting transistor 100, preventing electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, ensuring stable current during device operation, avoiding brightness fluctuations, and thus effectively improving the display performance of the display panel.

[0096] Another embodiment of this application provides a display device, which includes the display panel of the above embodiment. Further, the display device includes mobile phones, VR devices, computers, televisions, vehicle display devices, etc.

[0097] The display device provided in this embodiment includes an organic light-emitting transistor 100 in its display panel. The organic light-emitting transistor 100 has an auxiliary gate 2 disposed on the side of the organic semiconductor layer 6 away from the control gate 8. The auxiliary gate 2 regulates the electrical properties of the organic light-emitting transistor 100, preventing electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6. This ensures stable current during device operation, avoids brightness fluctuations, and effectively improves the display performance of the display device.

[0098] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0099] It should be noted that the above description describes some embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0100] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. An organic light-emitting transistor, characterized by comprising: include: Substrate; An auxiliary gate, the auxiliary gate being located on one side of the substrate; A first gate insulating layer is located on the side of the auxiliary gate away from the substrate; The source and the drain are located on the side of the first gate insulating layer away from the substrate; An organic semiconductor layer, wherein the organic semiconductor layer is located on the side of the first gate insulating layer away from the substrate; A second gate insulating layer is located on the side of the organic semiconductor layer away from the substrate; A control gate, the control gate being located on the side of the second gate insulating layer away from the substrate; The auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor. The auxiliary gate is used to receive a control voltage, which is a constant value and is greater than the gate voltage of the control gate. The control voltage is used to regulate the distribution of electrons and holes in the channel to regulate the electrical properties of the organic light-emitting transistor. The control voltage can suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer, thereby preventing electrons in the organic semiconductor layer from being captured at the interface between the first gate insulating layer and the organic semiconductor layer.

2. The organic light-emitting transistor according to claim 1, characterized in that, The source and drain are spaced apart and partially cover the side of the first gate insulating layer away from the substrate. Part of the organic semiconductor layer covers the side of the source and drain away from the substrate. Part of the organic semiconductor layer covers the area of ​​the first gate insulating layer not covered by the source and drain.

3. The organic light-emitting transistor according to claim 1, characterized in that, The auxiliary gate is made of at least one of aluminum, molybdenum, copper, or ITO.

4. The organic light-emitting transistor according to claim 1, characterized in that, The source electrode is made of at least one of aluminum, molybdenum, copper, or ITO; the drain electrode is made of at least one of aluminum, molybdenum, copper, or ITO.

5. The organic light-emitting transistor according to claim 1, characterized in that, The material of the first gate insulating layer includes at least one of silicon oxide and hafnium dioxide.

6. The organic light-emitting transistor according to claim 1, characterized in that, The material of the second gate insulating layer includes hafnium dioxide.

7. The organic light-emitting transistor according to claim 1, characterized in that, The material of the second gate insulating layer is different from the material of the first gate insulating layer.

8. The organic light-emitting transistor according to claim 1, characterized in that, The control gate comprises a transparent conductive material.

9. The organic light-emitting transistor according to claim 8, characterized in that, The transparent conductive material includes indium tin oxide.

10. The organic light-emitting transistor according to claim 1, characterized in that, The organic semiconductor layer includes an organic light-emitting material.

11. The organic light-emitting transistor according to claim 10, characterized in that, The organic light-emitting material includes at least one of Alq3 and C8-BTBT.

12. A method for fabricating an organic light-emitting transistor, characterized in that, include: A substrate is provided, and an auxiliary gate is formed on one side of the substrate; wherein the auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor. A first gate insulating layer is formed on the side of the auxiliary gate away from the substrate; The source and drain are formed on the side of the first gate insulating layer away from the substrate; An organic semiconductor layer is formed on the side of the first gate insulating layer away from the substrate; A second gate insulating layer is formed on the side of the organic semiconductor layer away from the substrate; A control gate is formed on the side of the second gate insulating layer away from the substrate; The auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor, including: The auxiliary gate is used to receive a control voltage, which is used to control the distribution of electrons and holes in the channel to regulate the electrical properties of the organic light-emitting transistor. The control voltage can suppress the influence of dynamic changes in the gate voltage on electrons in the organic semiconductor layer, thereby preventing electrons in the organic semiconductor layer from being captured by the interface between the first gate insulating layer and the organic semiconductor layer. The regulating voltage is a constant value; The regulating voltage is greater than the gate voltage of the control gate.

13. A display panel, characterized in that, Including the organic light-emitting transistor as described in any one of claims 1-11.

14. A display device, characterized in that, Includes the display panel as described in claim 13.

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