Electronic device

Abstract

Provided is an electronic device capable of seeing an image with little distortion. The electronic equipment comprises the display device and the optical equipment. The optical equipment comprises a position adjusting mechanism which can perform diopter adjustment. In a display device, a corrected image in which an original image is distorted into a barrel shape in order to correct distorted aberration of a lens is displayed. The corrected image changes a correction amount (size and distortion rate of the image) according to the lens position moved by the position adjustment mechanism. Therefore, even if the lens position is moved for diopter adjustment, the image can be corrected to the most appropriate state all the time, and the quality of the seen image can be improved.

Description

Technical Field

[0001] One embodiment of the present invention relates to an electronic device including an optical device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification, etc., relates to an object, method or manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product or a composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, a camera device, a method for operating these devices or a method for manufacturing these devices can be cited.

[0003] Note that in this specification and the like, a semiconductor device refers to any device that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one form of a semiconductor device. In addition, a storage device, a display device, a camera device, and an electronic device may include a semiconductor device. Background Art

[0004] As electronic devices applied to virtual reality (VR) or augmented reality (AR), goggles-type devices and glasses-type devices have been developed.

[0005] In addition, as a display device that can be applied to the display panel, a display device including a liquid crystal element, a display device including an organic EL (Electro Luminescence) element or a light emitting diode (LED): Light Emitting Diode, etc. can be typically mentioned.

[0006] Since a display device including an organic EL element does not require a backlight source required for a liquid crystal display device, a thin, lightweight, high-contrast, and low-power display device can be realized. For example, Patent Document 1 discloses an example of a display device using an organic EL element. [Prior technical literature] [Patent Document]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2002-324673 Summary of the invention Technical problem to be solved by the invention

[0008] Electronic devices used in VR or AR are one type of wearable devices, and need to be small in order to improve portability and wearability. Therefore, such electronic devices are preferably compatible with the naked eye, and optical devices use a diopter adjustment mechanism. For example, diopter adjustment can be performed by changing the spacing of the components that constitute the optical device.

[0009] In addition, optical devices include a plurality of lenses, and distortion aberration in which a straight line appears curved is often generated. This distortion aberration can be corrected by using an image that is deformed in the opposite direction to the deformation caused by the aberration. For example, when a pincushion-shaped distortion aberration is generated that deforms the image being viewed into a shape that becomes narrow in the middle, the distortion can be corrected by using an image that is corrected in a manner that expands into a barrel shape.

[0010] However, when the intervals between components of an optical device are changed by diopter adjustment, the degree of distortion aberration changes, so there is a problem that the effect of correcting the image is insufficient.

[0011] Therefore, one of the purposes of one embodiment of the present invention is to provide an electronic device that can see images with less distortion regardless of the visual acuity. In addition, one of the purposes of one embodiment of the present invention is to provide a thin and lightweight electronic device. In addition, one of the purposes of one embodiment of the present invention is to provide an electronic device with high quality of images seen. In addition, one of the purposes of one embodiment of the present invention is to provide a novel electronic device.

[0012] Note that the description of these purposes does not prevent the existence of other purposes. Note that one embodiment of the present invention does not necessarily achieve all of the above purposes. Note that purposes other than the above can be naturally known and extracted from the description of the specification, drawings, claims, etc. Solutions to technical problems

[0013] One embodiment of the present invention relates to an electronic device with little distortion aberration.

[0014] One embodiment of the present invention is an electronic device including a display panel, a first lens and a position adjustment mechanism, wherein the optical axis of the first lens intersects vertically with a display portion of the display panel, and the electronic device has a function of changing the size and distortion of an image displayed on the display portion according to the distance between the first lens and the display portion changed by the position adjustment mechanism.

[0015] The position adjustment mechanism may include a cylindrical cam. The position adjustment mechanism may include a stepping motor.

[0016] The position sensor mechanism may include a position sensor. The position sensor may have a function of detecting the position of the first lens.

[0017] The display panel preferably includes an organic EL element.

[0018] The above-mentioned electronic device also includes a linear polarizer, a first phase difference plate, a half-reflecting mirror, a second lens, a second phase difference plate and a reflective polarizer. The display panel, the linear polarizer, the first phase difference plate, the half-reflecting mirror, the second lens, the second phase difference plate, the reflective polarizer and the first lens can be arranged in sequence in a manner having areas overlapping each other.

[0019] Preferably, when the size and the distortion rate of the image displayed on the display unit are 1 when the first lens is at the first position, the size of the image displayed on the display unit is less than 1 and the distortion rate is greater than 1 when the first lens is at a second position closer to the display panel than the first position.

[0020] The image displayed on the display unit may be an image obtained by distorting a rectangular image into a barrel shape. Effects of the Invention

[0021] According to one embodiment of the present invention, an electronic device can be provided that allows viewing of images with less distortion regardless of the visual acuity. In addition, a thin and lightweight electronic device can be provided. In addition, an electronic device that provides high-quality images can be provided. In addition, a novel electronic device can be provided.

[0022] Note that the description of these effects does not prevent the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a diagram for explaining a display device and an optical device. Figure 2 It is a diagram for explaining an optical device. FIG. 3A to FIG. 3C It is a diagram for explaining the position of a virtual image in an optical system. FIG. 4A to FIG. 4C This is a diagram illustrating the angle at which a virtual image is incident on the eye. Figure 5 It is a diagram for explaining distortion aberration. Figure 6 The diagrams illustrate the corrected image and the viewed image relative to the lens position. Fig. 7A This is a diagram illustrating the effective area of ​​an image. Figure 7B This is a diagram for explaining the definition of image size. Figure 7C This is a diagram for explaining the definition of the distortion rate of an image. Fig. 8A and Figure 8B It is a diagram for explaining the position adjustment mechanism. Fig. 9A and Fig. 9B It is a diagram for explaining the position adjustment mechanism. Fig. 10A and Fig. 10B It is a diagram for explaining the position adjustment mechanism. FIG. 11A to FIG. 11C This is a diagram for explaining automatic adjustment of diopter. Fig. 12A is a block diagram illustrating an electronic device. Fig. 12B This is a flowchart illustrating the generation and display of a corrected image. FIG. 13A to FIG. 13C It is a diagram for explaining a display device. Fig.14A and Fig. 14B It is a diagram for explaining a glasses-type device. FIG. 15A to FIG. 15C A diagram illustrating a structural example of a display panel. Fig.16A and Fig. 16B A diagram illustrating a structural example of a display panel. FIG. 17A to FIG. 17F A diagram illustrating an example of the structure of a pixel. Fig.18A and Fig.18B A diagram illustrating a structural example of a display panel. Fig.19 A diagram illustrating a structural example of a display panel. Fig. 20 A diagram illustrating a structural example of a display panel. Fig.21 A diagram illustrating a structural example of a display panel. Fig. 22 A diagram illustrating a structural example of a display panel. Fig.23 A diagram illustrating a structural example of a display panel. Fig.24 A diagram illustrating a structural example of a display panel. Fig.25 A diagram illustrating a structural example of a display panel. FIG. 26A to FIG. 26F is a diagram illustrating a structural example of a light emitting device. FIG. 27A to FIG. 27C is a diagram illustrating a structural example of a light emitting device. Modes for Carrying Out the Invention

[0024] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person of ordinary skill in the art can easily understand the fact that its methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below. Note that in the structure of the invention described below, the same figure marks are used in different drawings to represent the same parts or parts with the same functions, and their repeated descriptions are omitted. Note that the shading of the same constituent elements is sometimes appropriately omitted or changed in different drawings.

[0025] In addition, even if there is one component in the circuit diagram, the component may be composed of multiple components if there is no problem in terms of function. For example, sometimes multiple transistors used as switches may be connected in series or in parallel. In addition, sometimes a capacitor is divided and arranged in multiple locations.

[0026] In addition, sometimes a conductor has multiple functions such as wiring, electrode and terminal, and in this specification, multiple names are sometimes used for the same component. In addition, even if the circuit diagram shows that the components are directly connected, sometimes the components are actually connected through more than one conductor, and this structure is also included in the category of direct connection in this specification.

[0027] (Implementation Method 1) In this embodiment, an electronic device which is one embodiment of the present invention is described.

[0028] One embodiment of the present invention is an electronic device such as a goggle-type device or a glasses-type device, which includes a display device and an optical device. The optical device includes a position adjustment mechanism that can adjust the diopter by moving a specific lens position closer to or farther from a display panel.

[0029] In the display device, a corrected image is displayed by distorting the original image into a barrel shape in order to correct the pincushion distortion aberration of the lens. The correction amount (image size and distortion rate) of the corrected image changes according to the lens position moved by the position adjustment mechanism. Thus, even if the lens position is moved for diopter adjustment, the image can be properly corrected, thereby improving the quality of the image to be viewed.

[0030] Note that the electronic device of one embodiment of the present invention has a structure in which a plurality of optical components are combined. The object in which this structure is housed in a housing is simply called a lens. Alternatively, it is sometimes called a pancake lens because of its thin shape.

[0031] Figure 11 is a perspective view illustrating a display device and an optical device of an electronic device that can be used in one embodiment of the present invention. Figure 1 As shown, the display device 30 and the optical device 40 are separately arranged so as to have areas overlapping each other.

[0032] The user can see the image displayed by the display device 30 by bringing the eye 10 close to the optical device 40. The user can see the image in a state where the viewing angle is enlarged by the optical device 40, thereby obtaining a sense of immersion and reality.

[0033] A portion of the optical device 40 is connected to the position adjustment mechanism 50. The position adjustment mechanism 50 can change the distance between the components included in the optical device 40. Thus, the visual acuity can be adjusted, for example, even if the user suffers from myopia, the image can be clearly seen. In addition, it can also be said that the position adjustment mechanism 50 changes the distance between the display unit of the display device 30 and a specific component included in the optical device 40.

[0034] The display device 30 has a structure in which a display panel 31, a linear polarizing plate 32 (indicated by a dotted line), and a phase difference plate 33 (indicated by a dotted line) are arranged in a manner having overlapping areas. Note that in the following description, the first surface is a surface of each component, and the second surface is a surface on the opposite side of the first surface.

[0035] For example, Figure 1 As shown, the following structure can be adopted: the display portion 34 of the display panel 31 is close to the first surface of the linear polarizing plate 32; and the second surface of the linear polarizing plate 32 is close to the first surface of the phase difference plate 33. Note that the combination of the linear polarizing plate 32 and the phase difference plate 33 is also called a circular polarizing plate that converts non-polarized light into circularly polarized light.

[0036] Note that the linear polarizing plate 32 and the phase difference plate 33 may not be components of the display device 30 but may be provided between the display device 30 (display panel 31) and the optical device 40. Alternatively, they may be arranged on the light incident surface side of the optical device 40 (the incident surface side of the half mirror 41) as components of the optical device 40. Alternatively, the linear polarizing plate 32 and the phase difference plate 33 may be components of the display device 30 and the optical device 40, respectively.

[0037] Here, an image obtained by deforming the original image in order to correct the distortion aberration of the optical device 40 is displayed on the display unit 34 of the display panel 31 . Figure 1 A corrected image is shown in which the rectangular image of the original image is distorted into a barrel shape in order to correct the pincushion distortion aberration of the optical device 40 .

[0038] In one embodiment of the present invention, the position adjustment mechanism 50 changes the correction amount of the corrected image according to the degree of distortion aberration that changes when the distance between components included in the optical device 40 is changed. Therefore, even when the diopter is adjusted, an appropriate image with less distortion can be seen.

[0039] The optical device 40 has an area where a half mirror 41, a lens 42, a phase difference plate 43, a reflective polarizer 44, and a lens 45 overlap each other. In addition, the optical axis 46 of the lens 42 and the lens 45 is configured to intersect perpendicularly with the display unit 34 of the display panel 31. Note that "perpendicular" refers to a state in which two straight lines form an angle of more than 85° and less than 95°. Here, one of the two straight lines represents the optical axis 46 of the lens 42 and the lens 45, and the other represents a straight line parallel to the display unit 34 (display surface).

[0040] For example, Figure 1 As shown, the first surface of the half mirror 41 is close to the first surface of the lens 42. Alternatively, the first surface of the phase difference plate 43 is close to the first surface of the reflective polarizer 44; and the second surface of the reflective polarizer 44 is close to the first surface of the lens 45.

[0041] In order to ensure the required optical path length, the half mirror 41 and the lens 42 may be configured separately. Figure 1 Although the configuration example in which the lens 42 and the phase difference plate 43 are arranged separately is shown, the lens 42 and the phase difference plate 43 may be arranged close to each other.

[0042] Note that in order to realize the structure in which one component is close to another component, it is preferable to use an optical adhesive having high transmittance for the wavelength of light used (for example, the wavelength range of visible light or the wavelength range of blue light to red light) and no absorption and birefringence of specific polarized light to bond the components together. Alternatively, another component in contact with one component may be formed by coating or the like instead of bonding. Alternatively, an adhesive or the like may not be arranged between one component and another component, and the two may be disposed in contact. Alternatively, a gap may be provided between the two.

[0043] Figure 2 FIG. 1 is a diagram of an optical device for explaining one embodiment of the present invention, in which a portion of the optical path is indicated by a dotted line. Figure 1 Note that in Figure 2 Even when the components of the display device 30 and the optical device 40 are separately arranged as shown, the effect of one embodiment of the present invention can be obtained.

[0044] Part of the light emitted from the display panel 31 passes through the linear polarizing plate 32, the phase difference plate 33, the half mirror 41, the lens 42, and the phase difference plate 43, and is reflected by the reflective polarizing plate 44. The light reflected by the reflective polarizing plate 44 passes through the phase difference plate 43 and the lens 42, and is reflected by the half mirror 41. The light reflected by the half mirror 41 passes through the lens 42, the phase difference plate 43, the reflective polarizing plate 44, and the lens 45, and enters the eye 10.

[0045] In this way, since the optical path length can be ensured by repeating reflection in the optical device 40, an optical system with a short focal distance can be realized.

[0046] As the display panel 31, a liquid crystal panel including a liquid crystal element, an organic EL panel including an organic EL element, or an LED panel including a Micro LED can be used. In particular, it is preferable to use an organic EL panel that is self-luminous and easy to form a high-definition display portion. Note that in this specification, Micro LED refers to a chip area of ​​10000μm 2 In addition, in LED panels, it is not limited to Micro LEDs, for example, LEDs with a chip area larger than 10000μm can also be used. 2 And 1mm 2 The following light-emitting diodes (also called Mini LEDs).

[0047] The linear polarizer 32 can extract a linear polarized light from the light vibrating in all directions of 360°. Note that in this embodiment, the transmission axis of the linear polarizer 32 is described as 0°, but 0° is not an absolute value but a reference value. That is, the polarization plane of the linear polarized light extracted by the linear polarizer 32 is taken as 0°. Therefore, for example, the 90° linear polarized light in this embodiment refers to the linear polarized light whose polarization plane is rotated 90° from the linear polarizer 32.

[0048] The phase difference plate 33 has the function of converting linear polarized light into circular polarized light. Here, a λ / 4 plate (1 / 4 wave plate) is used as the phase difference plate 33. The λ / 4 plate is overlapped on the linear polarizing plate 32 in such a way that the angle between the slow axis of the λ / 4 plate and the linear polarization axis emitted from the linear polarizing plate 32 is 45°, thereby becoming right-handed circularly polarized light (right circularly polarized light). In addition, the λ / 4 plate is overlapped on the linear polarizing plate 32 in such a way that the angle between the slow axis of the λ / 4 plate and the linear polarization axis emitted from the linear polarizing plate 32 is -45°, thereby becoming left-handed circularly polarized light (left circularly polarized light). In one embodiment of the present invention, as long as the combination with the characteristics of the reflective polarizing plate 44 described later is appropriate, right circularly polarized light or left circularly polarized light can be used.

[0049] As the half mirror 41, for example, the following structure can be adopted: optical glass or optical resin material with high visible light transmittance is used for substrate 41a; and the surface provided with a metal film or a dielectric film is used as a reflecting surface 41b. In addition, the visible light transmittance and reflectance of the half mirror 41 can be about 50% respectively, and one of the transmittance and reflectance is preferably 40% or more and 60% or less.

[0050] In addition, the reflecting surface 41b of the half mirror 41 preferably has a positive refractive power to collect light in the direction of the eye 10. Therefore, it is preferred that the substrate 41a has a concave curved surface, and the reflecting surface 41b is formed on the concave curved surface.

[0051] Note that Figure 2 In the embodiment, the substrate 41a has a convex meniscus lens shape in which the first surface is a convex surface, the second surface is a concave surface, and the curvature radius of the first surface is smaller than the curvature radius of the second surface when viewed in cross section, but it can also have a shape in which the curvature radii of the first surface and the second surface are equal and do not form a lens. In this case, a reflecting surface 41b can also be provided on the first surface of the substrate 41a.

[0052] Note that as long as light can be collected toward the eye 10 using components other than the half mirror 41 included in the optical device 40 , the substrate 41 a may have a planar shape and the reflecting surface 41 b may be provided on the planar shape.

[0053] A convex lens can be used as the lens 42. Figure 2 An example of using a plano-convex lens as lens 42 is shown, but lens 42 is not limited to the above example. For example, lens 42 may be composed of a plurality of plano-convex lenses. In addition, a biconvex lens may be used as lens 42. Alternatively, a structure in which a plurality of lenses selected from a biconvex lens, a plano-convex lens, a biconcave lens, a plano-concave lens, a convex meniscus lens, and a concave meniscus lens are combined may be used as lens 42. In addition, lens 42 is not limited to a spherical lens, and may be an aspherical lens.

[0054] Note that the lens 45 may be the same lens as the lens 42. In addition, the optical device 40 may be provided with lenses other than the lenses 42 and 45.

[0055] The phase difference plate 43 has a function of reversibly converting linear polarization and circular polarization. As with the phase difference plate 33, a λ / 4 plate (1 / 4 wave plate) can be used as the phase difference plate 43.

[0056] The reflective polarizer 44 can transmit linear polarized light that matches the transmission axis and reflect linear polarized light that is orthogonal to the transmission axis. As the reflective polarizer, for example, a wire grid polarizer or a dielectric multilayer film can be used.

[0057] use Figure 2The optical paths shown illustrate the details of the polarization states of the optical device 40 described above.

[0058] The light emitted from the display panel 31 and vibrating in all directions of 360° enters the linear polarizing plate 32. The transmission axis of the linear polarizing plate 32 is 0°, and the linear polarizing plate 32 emits 0° linearly polarized light.

[0059] The 0° linearly polarized light emitted from the linear polarizing plate 32 is converted into right circularly polarized light by the phase difference plate 33 . The right circularly polarized light emitted from the phase difference plate 33 passes through the half mirror 41 and enters the lens 42 .

[0060] The right circularly polarized light emitted from the lens 42 is incident on the phase difference plate 43 and converted into 0° linearly polarized light. The 0° linearly polarized light emitted from the phase difference plate 43 is reflected by the reflective polarizing plate 44 having a reflection axis of 0° and is incident on the phase difference plate 43 and converted into right circularly polarized light.

[0061] The right circularly polarized light emitted from the phase difference plate 43 passes through the lens 42, is reflected by the half mirror 41, and is inverted into the left circularly polarized light. The left circularly polarized light inverted by the half mirror 41 passes through the lens 42 and enters the phase difference plate 43, and is converted into 90° linear polarized light. The 90° linear polarized light emitted from the phase difference plate 43 passes through the reflective polarizer 44 and the lens 45 with a transmission axis of 90°, and is incident on the eye 10.

[0062] Thus, by utilizing linear polarized light and circular polarized light, as well as a half mirror and a reflective polarizing plate, selective reflection and transmission can be achieved, thereby ensuring an optical path length within a limited space and shortening the focal length of the optical device.

[0063] Note that, although the example in which right circularly polarized light is used as the light that passes through the half mirror 41 and enters the lens 42 is described above, left circularly polarized light may also be used.

[0064] Notice, Figure 1 and Figure 2 The structures of the display device 30 and the optical device 40 shown are just examples, and other structures may be adopted.

[0065] Next, the diopter adjustment will be described. FIG. 3A to FIG. 3C is a diagram illustrating the position of a virtual image in an optical system. Figure 2 In the lens 42 of the optical device 40 shown, light is transmitted multiple times because the components before and after it reflect light. This means that multiple lenses are arranged on the optical path. Here, the virtual image position when using one lens and when using two lenses is described.

[0066] Figure 3AThis is a diagram showing the position of a virtual image when using a single lens. Here, F1 is the focal point of lens L1, and there is a light source A on the left side of lens L1. Figure 3A In [reference], the virtual image B is located at the intersection point where the line (represented by a dashed line) extending the optical path BM1 of the light that is parallel to the light source A and enters the focal point F1 on the right side of lens L1 to the left side of lens L1 intersects with the line (represented by a dashed line) extending the optical path BM2 of the light that enters the center of lens L1 from the light source A to the left side of lens L1.

[0067] Next, the position of the virtual image when using two lenses is described. Figure 3B A structure is shown where lens L2 is disposed at a certain position on the right side of lens L1. F2 is the focal point of lens L2. Here, in lens L2, the virtual image B of lens L1 is regarded as the light source. At this time, the virtual image C1 of lens L2 is located at a position farther from lens L1.

[0068] Next, as Figure 3C shown, starting from the Figure 3B state, only lens L2 is moved closer to lens L1. At this time, the position of the virtual image C2 of lens L2 is closer to lens L1 than the position of the virtual image C1. Note that although Figure 3B and Figure 3C show examples of moving lens L2 to change the position of the virtual image, lens L1 can also be moved.

[0069] Next, the case where light enters the eye is described using the formula of the lens. Figure 4A This is a diagram showing the imaging position when applying the position of each of the virtual images C1 and C2 to the lens formula (1 / S1) + (1 / S2) = 1 / F. Note that assuming that the focal point F is almost the same in the case of using two lenses, the lenses are simplified to one for illustration. Here, S1 is the distance from the center of lens L to the virtual image C1, S2 is the distance from the center of lens L to the imaging position, and F is the focal point of lens L.

[0070] Similarly to the above, when the distance from the center of lens L to the virtual image C2 is set to S3 (S3 < S1), the distance S4 from the center of the lens to the virtual image C2 is longer than S2 (S4 > S2).

[0071] Here, the light enters the eye at a position at a certain distance from lens L. From Figure 4A , it can be seen that since S4 > S2, the incident angle (θ C2 ) of the light of the virtual image C2 is smaller than the incident angle (θ C1 ) of the light of the virtual image C1.

[0072] As Figure 4B shown, in the virtual image C1 located at a position farther from lens L, the angle (θ C1In the case of myopia, the refractive power of the cornea and the lens is greater than that of emmetropia or the eye axis is too long than that of emmetropia, so it cannot be adjusted to form an image on the retina 11, but forms an image in front of the retina 11. Therefore, the image looks blurred.

[0073] On the other hand, Figure 4C As shown, in the virtual image C2 located closer to the lens L, the incident angle (θ C2 ) is smaller and closer to parallel light, so the angle of incidence to the eye 10 is smaller than that of the virtual image C1 (θ C2 <θ C1 ). Therefore, due to the imaging position ratio Figure 4B The object is far away, so even if you are nearsighted, an image can be formed on the retina 11, thereby correcting the blur of the image.

[0074] As described above, the diopter can be adjusted by changing the distance between the components included in the optical device 40. Note that although the above example deals with myopia, it is also possible to deal with hyperopia by changing the distance between the components in the opposite manner.

[0075] Next, the distortion aberration of the lens is explained. The distortion aberration appears obviously in the peripheral part of the imaging surface, which refers to the phenomenon that the rectangular shape is distorted into a barrel or pillow shape. This is because there is a difference between the image magnification of the center of the convex lens and the image magnification of the periphery, and the difference in magnification appears as a distortion of the image.

[0076] Distortion changes depending on the position of the aperture that adjusts the amount of light. If the aperture is closer to the image than the lens, it becomes positive distortion (pincushion shape). On the contrary, if the aperture is closer to the object (light source) than the lens, it becomes negative distortion (barrel shape).

[0077] exist Figure 2 In the optical system shown, the aperture can be regarded as the vicinity of the pupil of the eye 10. Therefore, Figure 5 As shown in FIG. 1 , when the display image of the display panel is a rectangular image (without correction), the image seen through the lens is a pincushion-shaped image. In this case, by deforming the display image into a barrel-shaped image (with correction), a rectangular image can be seen.

[0078] However, distortion is an aberration specific to the optical system, and the degree of distortion varies due to the above-mentioned diopter adjustment by moving the lens position. In other words, in a correction image produced based on a certain lens position, it is not possible to fully correct it when the lens position is different.

[0079] Therefore, in one embodiment of the present invention, the correction image displayed on the display panel is appropriately changed according to the position of the lens moved for diopter adjustment. Figure 6 Is the description based on the use Figure 2A diagram of a corrected image envisioned from the simulation results of some of the constituent elements of the optical device 40 shown, which is a diagram showing the relationship between the position of the lens 45 and the display image (the shape of the corrected image) on the display panel 31. When performing the simulation, the optical design analysis software CODE V manufactured by Synopsys was used.

[0080] In the optical device 40, pincushion distortion aberration occurs, and a barrel-shaped image showing a corrected rectangular image is shown as the display image.

[0081] Here, taking the correction amount of the image when the interval between the lens 42 and the lens 45 shown in the middle part of Figure 6 is D2 as a reference, the size and distortion curvature of the corrected image (IMA2) are 1.

[0082] Note that the size of the image refers to the size of the effective area of the image. For example, as shown in Fig. 7A , near the end of the display unit 80, the black display area 82 outside the corrected image is not included in the effective area 83. In addition, the size of the image can be referred to as any one of the length a between the opposite sides of the effective area 83, the length b of the diagonal of the rectangle inscribed in the effective area 83, and the area s of the effective area 83 (refer to Figure 7B ). In addition, the distortion curvature can be, for example, the ratio (d / c) of the length c of the chord to the length d of the camber (the distance between the center of the chord and the center of the arc), and the larger the value, the greater the distortion (refer to Figure 7C ). Note that the shape of the distortion is not limited to a circular arc.

[0083] As shown in the upper part of Figure 6 , when the interval between the lens 42 and the lens 45 is set to D1 (D1 > D2), the corrected image (IMA1) has an appropriate shape with a size greater than 1 and a distortion curvature less than 1. In other words, the position of the lens 45 is farther from the display panel 31 compared to the case shown in the middle part of Figure 6 .

[0084] As shown in the lower part of Figure 6 , when the interval between the lens 42 and the lens 45 is set to D3 (D3 < D2), the corrected image (IMA3) has an appropriate shape with a size less than 1 and a distortion curvature greater than 1. In other words, the position of the lens 45 is closer to the display panel 31 compared to the case shown in the middle part of Figure 6 .

[0085] The closer the distance between lens 42 and lens 45 is, the closer the position of the virtual image seen is to eye 10. Therefore, by making the distance between lens 42 and lens 45 closer, the size of the corrected image is smaller, and the size of the image seen can be made equal regardless of the position of lens 42. In addition, since IMA1, IMA2, and IMA3 have different curvatures, they are not similar shapes.

[0086] In this way, by changing the correction amount of the correction image according to the lens position, a rectangular image can be viewed. In other words, even if the diopter adjustment is performed, an image with distortion corrected can be viewed.

[0087] Next, the position adjustment mechanism 50 will be described. Fig. 8A and Figure 8B Yes Description Figure 1 FIG. 2 is a diagram showing an example of a position adjustment mechanism 50 in the manner shown. Fig. 8A The lens 45 is shown to be located in front (close to the eye 10, see Figure 6 The state of the upper part, Figure 8B The lens 45 is shown to be located at the rear (away from the eye 10, see Figure 6 of the lower part).

[0088] Fig. 8A and Figure 8B The position adjustment mechanism 50 shown includes a cylinder 51, a pin 52, and a cylinder cam 53, which can move the position of the lens 45. In addition, it also includes a position sensor 54, which can indirectly detect the position of the lens 45. The lens 45 is fixed to the inner side of the cylinder 51, and the pin 52 and the ring 56 are fixed to the outer side of the cylinder 51. In addition, the ring 56 can also be a part of the cylinder 51.

[0089] By fixing the cylindrical cam 53 and rotating the ring 56, the pin 52 can be moved along the groove obliquely provided on the side surface of the cylindrical cam 53. That is, by rotating the ring 56, the cylinder 51 and the lens 45 fixed to the pin 52 can be moved in the front-rear direction.

[0090] The position sensor 54 can detect the position of the end of the cylinder 51, for example. Since the relative position between the end of the cylinder 51 and the lens 45 does not change, the position of the lens 45 can be indirectly detected by detecting the position of the end of the cylinder 51. In addition, the position sensor 54 can also be used to detect the position of the pin 52 or a mark provided on the surface of the cylinder 51. As the position sensor 54, in addition to non-contact sensors such as photoelectric sensors, displacement sensors, length measurement sensors, image sensors, proximity sensors, and ultrasonic sensors, contact sensors can also be used.

[0091] The position adjustment mechanism for moving the lens 45 may also be Fig. 9A The method shown. Fig. 9A The position adjustment mechanism 60 shown is connected to a cylinder 62 inside which the lens 45 is fixed via a support 61. Alternatively, the cylinder 62 may be directly connected to the position adjustment mechanism 60 without using the support 61.

[0092] The position adjustment mechanism 60 is, for example, Fig. 9B The rack and pinion mechanism shown is a rack and pinion mechanism. The support 61 is fixed to the rack 63, and the rack 63 can be slid by rotating the pinion 64. The shaft 65 of the pinion 64 is connected to the knob 66.

[0093] The rack 63 is provided with a mark 55, and the position sensor 54 detects the mark to indirectly detect the position of the lens 45. The mark 55 may be provided on the shaft 65. In addition, the position of the lens 45 may be indirectly detected by detecting the teeth of the rack 63 or the teeth of the pinion 64 instead of the mark 55. In addition, the position sensor 54 may use any of the above-mentioned sensors.

[0094] Note that although Fig. 9B The manual rotation of the knob 66 ​​is shown, but Fig. 10A As shown, a stepper motor 67 may also be connected to the shaft 65. The stepper motor 67 can control the rotation angle according to the pulse signal, so the position adjustment can be performed accurately. In addition, when the stepper motor 67 is used, the position sensor 54 may also be omitted.

[0095] In addition, if Fig. 10B As shown, a ball screw mechanism can also be used for the position adjustment mechanism 60. The support 61 is fixed to the nut 85, and the nut 85 can be slid by rotating the screw shaft 84. The screw shaft 84 can be connected to the stepping motor 67, and the position adjustment can be performed accurately.

[0096] If using Fig. 10A and Fig. 10B The position adjustment mechanism 60 shown in the figure can adjust the diopter by button operation, etc., and can also store the lens position at that time. For example, if the lens position is registered as account information, the diopter setting can be performed by logging in to the electronic device without the user's diopter adjustment work.

[0097] In addition, the vision adjustment can also be performed automatically. Fig.11A and Fig. 11B As shown, the light source 86 is arranged so as to irradiate light to the eye 10 through the position-adjusted lens 45, and the reflected light from the retina 11 can be detected by the optical sensor 87. Fig.11A Indicates the state where the diopter is not adjusted. Fig. 11B Indicates the status of adjusting the diopter.

[0098] When the lens 45 is moved by the position adjustment mechanism 60 while the intensity of the reflected light is detected by the optical sensor, the intensity of the detection light increases and decreases. Fig. 11C The relationship between the lens position and the reflected light intensity is shown. Thus, when the reflected light intensity is maximum ( Fig. 11B ), it can be regarded as forming an image on the retina 11 (reflection surface). Therefore, by detecting the position where the intensity of the reflected light becomes the maximum, the diopter adjustment is ended. Here, infrared light is preferably used as the light source. Infrared light is invisible, and the diopter adjustment work can be performed in a state where it is not seen.

[0099] Fig. 12A 1 is a block diagram of some components of an electronic device according to one embodiment of the present invention. The electronic device includes a control circuit 35, a computing circuit 36, a communication device 37, a storage device M1, and a storage device M2 in addition to the display device 30 and the optical device 40. Fig. 12B The flowchart for correcting the image shown illustrates these components.

[0100] First, the lens position of the optical device 40 is determined according to the eyesight of the user of the electronic device (S1). The control circuit 35 reads the information of the lens position from the optical device 40 (S2), and reads the correction coefficient according to the lens position from the lookup table (LUT) stored in the storage device M2 (S3). In addition, the control circuit 35 reads the image data to be displayed from the storage device M1 (S4). The calculation circuit 36 ​​generates the correction image data from the correction coefficient and the image data read out (S5), and displays the correction image on the display device 30 (S6).

[0101] In addition, the image data may be inputted from the outside to the storage device M1 via the communication device 37. In addition, the corrected image data generated by the operation circuit 36 ​​may be once stored in the storage device M1, read out from the storage device M1, and displayed on the display device 30.

[0102] In addition, the above description describes a method of reading the correction coefficient from the LUT stored in the storage device M2, but the function stored in the storage device M2 and the information on the lens position in the optical device 40 may be read separately, and the correction coefficient may be calculated by the calculation circuit 36.

[0103] Fig.13A 1 is a diagram for explaining a display panel 31 included in an electronic device according to one embodiment of the present invention. The display panel 31 includes a pixel array 74, a circuit 75, and a circuit 76. The pixel array 74 includes pixels 70 arranged in the column direction and the row direction.

[0104] The pixel 70 may include a plurality of sub-pixels 71. The sub-pixels 71 have a function of emitting light for display.

[0105] Note that in this specification, although the minimum unit that performs independent operation in a "pixel" is defined as a "sub-pixel" for convenience, "pixel" can be replaced with "region" and "sub-pixel" can be replaced with "pixel".

[0106] The sub-pixel 71 includes a light-emitting device that emits visible light. As the light-emitting device, it is preferred to use an EL element such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode). As the luminescent material contained in the EL element, there can be cited substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.), etc. In addition, as a light-emitting device, LEDs such as Micro LED (Light Emitting Diode) can also be used.

[0107] The circuit 75 and the circuit 76 are driving circuits for driving the sub-pixel 71. The circuit 75 can be used as a source driving circuit, and the circuit 76 can be used as a gate driving circuit. As the circuit 75 and the circuit 76, for example, a shift register circuit or the like can be used.

[0108] In addition, if Fig. 13B As shown, the following structure may be adopted: circuits 75 and 76 are provided in layer 77; pixel array 74 is provided in layer 78; and layer 77 overlaps layer 78. By adopting this structure, a display device with a narrow frame can be formed.

[0109] In addition, by providing the driving circuit in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance can be reduced. Thus, a display panel capable of high-speed operation and low power consumption operation can be realized.

[0110] In addition, if Fig. 13B As shown, by dividing and arranging the circuit 75 and the circuit 76, the pixel array 74 can be partially driven. For example, the image data can be partially rewritten in the pixel array 74. In addition, a part of the pixel array 74 can be operated at a different operating frequency.

[0111] Notice, Fig. 13BThe configuration and area of ​​the circuit 75 and the circuit 76 shown are only examples and can be changed appropriately. In addition, a part of the circuit 75 and the circuit 76 can also be formed in the same layer as the pixel array 74. In addition, the layer 77 can also be provided with circuits such as a storage circuit, a calculation circuit, and a communication circuit.

[0112] In this structure, for example, layer 77 may be provided on a single crystal silicon substrate, circuits 75 and 76 may be formed using transistors containing silicon in a channel formation region (hereinafter, Si transistors), and pixel circuits included in pixel array 74 provided in layer 78 may be formed using transistors containing metal oxide in a channel formation region (hereinafter, OS transistors). The OS transistor may be formed by stacking a thin film on the Si transistor.

[0113] Note that Fig. 13C As shown, a layer 79 provided with an OS transistor may be included between layer 77 and layer 78. In layer 79, an OS transistor may be used to form a portion of a pixel circuit included in pixel array 74. Alternatively, an OS transistor may be used to form a portion of circuits 75 and 76. Alternatively, an OS transistor may be used to form a portion of a circuit such as a storage circuit, a computing circuit, and a communication circuit that may be provided in layer 77.

[0114] Fig.14A and Fig. 14B It is shown that Figure 1 FIG. 1 is a diagram of an example of a glasses-type device including a display device 30 and an optical device 40. Here, the display device 30 and the optical device 40 are combined into a display unit 92 and indicated by a dotted line. The glasses-type device includes two sets of display units 92, and is sometimes referred to as VR glasses, etc., depending on the purpose.

[0115] Two sets of display units 92 are installed in the frame 90 in such a way that the surface of the lens 45 is exposed inside. One display unit 92 is a right-eye display unit, and the other display unit 92 is a left-eye display unit. By using each display unit 92 to display an image corresponding to the parallax, the user can feel the three-dimensional effect of the image.

[0116] In addition, the frame 90 or the belt 91 may also be provided with an input terminal and an output terminal. A cable for supplying an image signal from an image output device or the like or power for charging a battery provided in the frame 90 may be connected to the input terminal. The output terminal is used as a sound output terminal, for example, and may be connected to an earphone or a headset. In addition, in the case where sound data can be output via wireless communication or sound is output from an external image output device, the sound output terminal may not be provided.

[0117] In addition, a wireless communication module and a storage module may also be provided inside the frame 90 or the belt 91. The wireless communication module may be used to wirelessly download the content to be viewed and store it in the storage module. Thus, the user may view the downloaded content at any time offline.

[0118] In addition, a sight detection sensor may be provided in the frame 90. For example, operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, confirmation, return, and operation buttons such as video play, stop, pause, fast forward, and fast rewind are displayed so that the user can see the operation buttons and perform various operations.

[0119] By using the optical device 40 of one embodiment of the present invention in a glasses-type device, a small, thin, low-power, and highly reliable electronic device can be realized.

[0120] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0121] (Implementation Method 2) In this embodiment, a structural example of a display panel that can be used in an electronic device according to one embodiment of the present invention is described. The display panel described below can be used as the display panel 31 in Embodiment 1 described above.

[0122] One embodiment of the present invention is a display panel including a light-emitting element (also referred to as a light-emitting device). The display panel includes two or more pixels with different luminous colors. Each pixel includes a light-emitting element. Each light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The two or more light-emitting elements with different luminous colors each include an EL layer containing different luminescent materials. For example, a full-color display panel can be achieved by including three light-emitting elements that emit red (R), green (G) or blue (B) light, respectively.

[0123] When manufacturing a display panel including a plurality of light-emitting elements with different luminous colors, it is necessary to form at least a layer containing a light-emitting material (light-emitting layer) into an island shape. Here, a method of forming an island-shaped organic film by a vapor deposition method using a shadow mask such as a metal mask is known when forming a part or all of the EL layer separately. However, this method is difficult to achieve high definition and high aperture ratio of the display panel because the shape and position of the island-shaped organic film deviate from the shape and position at the time of design due to various influences such as the accuracy of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the enlargement of the outline of the deposited film caused by vapor scattering. In addition, during vapor deposition, the film thickness at the end is sometimes reduced due to the blurred outline of the layer. That is, the film thickness of the island-shaped light-emitting layer is sometimes different depending on the position. In addition, when manufacturing a large-scale and high-resolution or high-definition display panel, there is the following concern: due to the low dimensional accuracy of the metal mask and deformation caused by heat, etc., the manufacturing yield is reduced. Therefore, the following measures have been taken: the definition (also called pixel density) is simulated by adopting a special pixel arrangement such as a Pentile arrangement.

[0124] Note that in this specification, etc., "island-shaped" means a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-shaped light-emitting layer means a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0125] In one embodiment of the present invention, the EL layer is processed into a fine pattern by photolithography without using a shadow mask such as a high-definition metal mask (FMM). Therefore, a display panel with high definition and high aperture ratio, which is difficult to achieve at present, can be realized. In addition, since the EL layer can be manufactured separately, a display panel with a very clear and high contrast display quality can be realized. In addition, for example, the EL layer can also be processed into a fine pattern using both a metal mask and photolithography.

[0126] In addition, part or all of the EL layer can be physically separated. Thus, leakage current between light-emitting elements through a layer (also referred to as a common layer) commonly used by adjacent light-emitting elements can be suppressed. Therefore, crosstalk caused by unintentional light emission can be suppressed, thereby realizing a display panel with very high contrast. In particular, a display panel with high current efficiency at low brightness can be realized.

[0127] One embodiment of the present invention can also realize a display panel that combines a white light-emitting light-emitting element and a color filter. In this case, light-emitting elements of the same structure can be used for each light-emitting element in a pixel (sub-pixel) that emits light of different colors, and all layers in each light-emitting element can be used as a common layer. Furthermore, a part or all of each EL layer can be separated by a process utilizing a photolithography method. Thus, the leakage current through the common layer can be suppressed and a display panel with high contrast can be realized. In particular, in an element having a series structure in which a plurality of light-emitting layers are stacked with an intermediate layer having high conductivity, the leakage current through the intermediate layer can be effectively prevented, so a display panel with high brightness, high definition and high contrast can be realized.

[0128] When the EL layer is processed by photolithography, degradation is sometimes caused by the exposure of a portion of the light-emitting layer. Therefore, it is preferred to provide an insulating layer that covers at least the side of the island-shaped light-emitting layer. The insulating layer may also cover a portion of the top surface of the island-shaped EL layer. The insulating layer is preferably made of a material that has a barrier property against water and oxygen. For example, an inorganic insulating film that does not easily diffuse water or oxygen can be used. Thus, the degradation of the EL layer can be suppressed and a display panel with high reliability can be realized.

[0129] In addition, there is an area (recess) between two adjacent light-emitting elements where the EL layer of each light-emitting element is not provided. When a common electrode or a common electrode and a common layer are formed in a manner covering the recess, the common electrode is sometimes broken due to a step at the end of the EL layer (also called disconnection), resulting in the insulation of the common electrode on the EL layer. Therefore, it is preferable to adopt a structure (also called LFP: Local Filling Planarization) in which a resin layer used as a planarization film is used to fill the local step between two adjacent light-emitting elements. The resin layer is used as a planarization film. As a result, the disconnection of the common layer or the common electrode can be suppressed, and a display panel with high reliability can be achieved.

[0130] Hereinafter, a more specific structural example of a display panel according to one embodiment of the present invention will be described with reference to the drawings.

[0131] [Structural example 1] Fig.15A FIG. 1 is a schematic top view of a display panel 100 according to one embodiment of the present invention. The display panel 100 includes a plurality of red light emitting elements 110R, a plurality of green light emitting elements 110G, and a plurality of blue light emitting elements 110B on a substrate 101. Fig.15A In order to distinguish the light-emitting elements, the symbols "R", "G" and "B" are attached to the light-emitting area of ​​each light-emitting element.

[0132] The light emitting elements 110R, the light emitting elements 110G, and the light emitting elements 110B are arranged in a matrix. Fig.15A A so-called stripe arrangement in which light-emitting elements of the same color are arranged in one direction is shown. Note that the arrangement method of the light-emitting elements is not limited to this, and other arrangement methods such as S stripe arrangement, Delta arrangement, Bayer arrangement, zigzag arrangement, etc. can also be used, and Pentile arrangement, Diamond arrangement, etc. can also be used.

[0133] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used. As the light-emitting substance included in the EL element, an inorganic compound (such as a quantum dot material) can also be used in addition to the organic compound.

[0134] In addition, Fig.15A A connection electrode 111C electrically connected to the common electrode 113 is shown. The connection electrode 111C is supplied with a potential (for example, an anode potential or a cathode potential) supplied to the common electrode 113. The connection electrode 111C is provided outside the display area in which the light-emitting elements 110R, etc. are arranged.

[0135] The connection electrode 111C can be provided along the outer periphery of the display area. For example, it can be provided along one side of the outer periphery of the display area, or can straddle two or more sides of the outer periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped (rectangular), L-shaped, "冂"-shaped (bracket-shaped), or quadrangular, etc. Note that in this specification, etc., the top surface shape refers to the shape when viewed from above, that is, the shape when viewed from above.

[0136] Fig. 15B And Fig. 15C Are respectively cross-sectional schematic views corresponding to Fig.15A The dotted lines A1 - A2 and the dotted lines A3 - A4 in. Fig. 15B A cross-sectional schematic view of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B is shown, Fig. 15C A cross-sectional schematic view of the connection portion 140 where the connection electrode 111C is connected to the common electrode 113 is shown.

[0137] The light emitting element 110R includes a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light emitting element 110G includes a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light emitting element 110B includes a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B share the common layer 114 and the common electrode 113.

[0138] The organic layer 112R included in the light-emitting element 110R includes a light-emitting organic compound that emits at least red light. The organic layer 112G included in the light-emitting element 110G includes a light-emitting organic compound that emits at least green light. The organic layer 112B included in the light-emitting element 110B includes a light-emitting organic compound that emits at least blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B can each be referred to as an EL layer, and include at least a layer having a light-emitting substance (light-emitting layer).

[0139] Hereinafter, when describing the common contents among the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, they are sometimes referred to as the light-emitting element 110. Similarly, when describing the common contents among the constituent elements distinguished by letters, such as the organic layer 112R, the organic layer 112G, and the organic layer 112B, the symbols without letters are sometimes used for description.

[0140] The organic layer 112 and the common layer 114 may independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 has a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from one side of the pixel electrode 111, and the common layer 114 includes an electron injection layer.

[0141] The pixel electrode 111R, the pixel electrode 111G and the pixel electrode 111B are all arranged in each light-emitting element. In addition, the common electrode 113 and the common layer 114 are set as a layer commonly used by each light-emitting element. A conductive film that is translucent to visible light is used as one of the pixel electrodes and the common electrode 113, and a conductive film that is reflective is used as the other. By making each pixel electrode translucent and the common electrode 113 reflective, a bottom emission type (bottom emission structure) display panel can be realized. Conversely, by making each pixel electrode reflective and the common electrode 113 translucent, a top emission type (top emission structure) display panel can be realized. In addition, by making both the pixel electrode and the common electrode 113 translucent, a double-sided emission type (double-sided emission structure) display panel can also be realized.

[0142] A protective layer 121 is provided on the common electrode 113 so as to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above to each light emitting element.

[0143] The end of the pixel electrode 111 preferably has a tapered shape. When the end of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the end of the pixel electrode 111 may also have a tapered shape. By making the side of the pixel electrode 111 have a tapered shape, the coverage of the organic layer 112 provided across the end of the pixel electrode 111 can be improved. In addition, by making the side of the pixel electrode 111 have a tapered shape, foreign matter (for example, dust or particles, etc.) in the manufacturing process can be easily removed by washing treatment, etc., so it is preferred.

[0144] Note that in this specification, etc., a tapered shape means a shape in which at least a portion of the side surface of a component is inclined relative to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also referred to as a taper angle) is less than 90 degrees.

[0145] The organic layer 112 is processed into an island shape by photolithography. Therefore, the organic layer 112 has a shape at its end where the angle between the top surface and the side surface is close to 90°. On the other hand, the film thickness of the organic film formed using FMM (Fine Metal Mask) tends to become thinner as it approaches the end. For example, its top surface is formed in a slope shape within a range of 1 μm to 10 μm, so it is difficult to distinguish the top surface from the side surface.

[0146] An insulating layer 125 , a resin layer 126 , and a layer 128 are provided between two adjacent light emitting elements.

[0147] Between two adjacent light-emitting elements, the side surfaces of each organic layer 112 face each other via the resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements and is provided in a manner to fill the end of each organic layer 112 and the area between the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and the common layer 114 and the common electrode 113 are provided in a manner to cover the top surface of the resin layer 126.

[0148] The resin layer 126 is used as a planarization film for filling the step between two adjacent light-emitting elements. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being disconnected (also called disconnected) due to the step at the end of the organic layer 112, thereby preventing the common electrode on the organic layer 112 from being insulated. The resin layer 126 may also be referred to as LFP (Local Filling Planarization).

[0149] As the resin layer 126, an insulating layer containing an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as the resin layer 126. In addition, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used.

[0150] In addition, a photosensitive resin may be used as the resin layer 126. A photoresist may be used as the photosensitive resin. A positive type material or a negative type material may be used as the photosensitive resin.

[0151] The resin layer 126 may also contain a material that absorbs visible light. For example, the resin layer 126 itself may be composed of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. As the resin layer 126, for example, the following resins may be used: a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light; or a resin that contains carbon black as a pigment and is used as a black matrix; etc.

[0152] The insulating layer 125 is in contact with the side surface of the organic layer 112. In addition, the insulating layer 125 covers the upper end portion of the organic layer 112. In addition, a portion of the insulating layer 125 is in contact with the top surface of the substrate 101.

[0153] The insulating layer 125 is located between the resin layer 126 and the organic layer 112 and is used as a protective film to prevent the resin layer 126 from contacting the organic layer 112. When the organic layer 112 and the resin layer 126 are in contact, the organic layer 112 may be dissolved by an organic solvent or the like used when forming the resin layer 126. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, the side surface of the organic layer 112 can be protected.

[0154] The insulating layer 125 may be an insulating layer containing an inorganic material. As the insulating layer 125, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film may be used. The insulating layer 125 may be a single-layer structure or a stacked-layer structure. As the oxide insulating film, a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film may be mentioned. As the nitride insulating film, a silicon nitride film and an aluminum nitride film may be mentioned. As the oxynitride insulating film, an oxynitride silicon film and an oxynitride aluminum film may be mentioned. As the nitride oxide insulating film, a nitride oxide silicon film and an oxynitride aluminum film may be mentioned. In particular, by using a metal oxide film such as an aluminum oxide film or a hafnium oxide film or an inorganic insulating film such as a silicon oxide film formed by an ALD method for the insulating layer 125, the insulating layer 125 can have fewer pinholes and have an excellent function of protecting the EL layer.

[0155] In this specification, etc., "oxynitride" refers to a material whose composition contains more oxygen than nitrogen, and "nitride oxide" refers to a material whose composition contains more nitrogen than oxygen. For example, "silicon oxynitride" refers to a material whose composition contains more oxygen than nitrogen, and "silicon nitride oxide" refers to a material whose composition contains more nitrogen than oxygen.

[0156] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method having good coverage.

[0157] Alternatively, a reflective film (e.g., a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted by the light-emitting layer. This can further improve light extraction efficiency.

[0158] The layer 128 is a portion of a protective layer (also referred to as a mask layer or a sacrificial layer) that is used to protect the organic layer 112 when etching the organic layer 112. The layer 128 can use a material that can be used for the insulating layer 125. In particular, the layer 128 and the insulating layer 125 are preferably made of the same material, so that the same equipment for processing can be used.

[0159] In particular, metal oxide films such as aluminum oxide films and hafnium oxide films and inorganic insulating films such as silicon oxide films formed by the ALD method have fewer pinholes and are therefore excellent in the function of protecting the EL layer and can be suitably used for the insulating layers 125 and 128 .

[0160] The protective layer 121 may have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, a semiconductor material or conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide may be used as the protective layer 121.

[0161] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferred to sandwich an organic insulating film between a pair of inorganic insulating films. In addition, the organic insulating film is preferably used as a planarizing film. Therefore, the top surface of the organic insulating film can be made flat, so the coverage of the inorganic insulating film thereon is improved, thereby improving the barrier property. In addition, the top surface of the protective layer 121 becomes flat, so when a structure (for example, a color filter, an electrode or a lens array of a touch sensor, etc.) is set above the protective layer 121, the influence of the concave-convex shape caused by the lower structure can be reduced, so it is preferred.

[0162] Fig. 15C The connecting portion 140 that electrically connects the connecting electrode 111C and the common electrode 113 is shown. In the connecting portion 140, an opening is provided in the insulating layer 125 and the resin layer 126 above the connecting electrode 111C. The connecting electrode 111C and the common electrode 113 are electrically connected in the opening.

[0163] Notice, Fig. 15C The connection portion 140 electrically connecting the connection electrode 111C and the common electrode 113 is shown, but the common electrode 113 may be provided on the connection electrode 111C via the common layer 114. In particular, when a carrier injection layer is used as the common layer 114, the resistivity of the material used for the common layer 114 is sufficiently low and the film thickness is also thin, so in many cases there is no problem in positioning the common layer 114 at the connection portion 140. Thus, the common electrode 113 and the common layer 114 can be formed using the same shadow mask, so that the manufacturing cost can be reduced.

[0164] [Structural example 2] Hereinafter, a display panel having a partially different structure from that of the above-described structural example 1 will be described. Note that regarding the same parts as those of the above-described structural example 1, the above-described structural example 1 may be referred to and the description thereof may be omitted.

[0165] Fig.16A 1 is a schematic cross-sectional view of the display panel 100a. The main differences between the display panel 100a and the display panel 100 are: the structure of the light emitting element; and the former includes a coloring layer.

[0166] The display panel 100a includes a light-emitting element 110W that emits white light. The light-emitting element 110W includes a pixel electrode 111, an organic layer 112W, a common layer 114, and a common electrode 113. The organic layer 112W emits white light. For example, the organic layer 112W may include two or more light-emitting materials whose luminescent colors are in a complementary color relationship. For example, the organic layer 112W may include a light-emitting organic compound that emits red light, a light-emitting organic compound that emits green light, and a light-emitting organic compound that emits blue light. In addition, it may also include a light-emitting organic compound that emits blue light and a light-emitting organic compound that emits yellow light.

[0167] Each organic layer 112W is separated between two adjacent light emitting elements 110W. Thus, leakage current flowing between adjacent light emitting elements 110W through the organic layer 112W can be suppressed, and crosstalk caused by the leakage current can be suppressed. Therefore, a display panel with high contrast and color reproducibility can be realized.

[0168] An insulating layer 122 serving as a planarization film is provided over the protective layer 121 , and the colored layers 116R, 116G, and 116B are provided over the insulating layer 122 .

[0169] As the insulating layer 122, an organic resin film or an inorganic insulating film with a flat top surface can be used. Since the insulating layer 122 is the surface on which the colored layer 116R, the colored layer 116G, and the colored layer 116B are formed, the thickness of the colored layer 116R and the like can be made uniform when the top surface of the insulating layer 122 is flat, thereby improving the color purity. Note that when the thickness of the colored layer 116R and the like is not uniform, the amount of light absorption varies depending on the region in the colored layer 116R, which may cause a decrease in color purity.

[0170] [Structural example 3] Fig. 16B is a schematic cross-sectional view of the display panel 100 b.

[0171] The light emitting element 110R includes a pixel electrode 111, a conductive layer 115R, an organic layer 112W, and a common electrode 113. The light emitting element 110G includes a pixel electrode 111, a conductive layer 115G, an organic layer 112W, and a common electrode 113. The light emitting element 110B includes a pixel electrode 111, a conductive layer 115B, an organic layer 112W, and a common electrode 113. The conductive layer 115R, the conductive layer 115G, and the conductive layer 115B are all light-transmissive and are used as optical adjustment layers.

[0172] A microcavity resonator (microcavity) structure can be realized by using a film that reflects visible light as the pixel electrode 111 and using a film that is both reflective and transparent to visible light as the common electrode 113. At this time, by adjusting the thickness of the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B so as to realize the most suitable optical path length, even if the organic layer 112 that emits white light is used, light of different wavelengths can be extracted from the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, respectively, and the light can be enhanced.

[0173] Furthermore, by providing the colored layer 116R, the colored layer 116G, and the colored layer 116B on the optical paths of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B, respectively, light with high color purity can be extracted.

[0174] In addition, an insulating layer 123 is provided to cover the ends of the pixel electrode 111, the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B. The ends of the insulating layer 123 preferably have a tapered shape. By providing the insulating layer 123, the coverage of the organic layer 112W, the common electrode 113, the protective layer 121, etc. formed thereon can be improved.

[0175] The organic layer 112W and the common electrode 113 are respectively provided as a continuous film in each light emitting element. By adopting this structure, the manufacturing process of the display panel can be greatly simplified, so it is preferred.

[0176] Here, the end of the pixel electrode 111 preferably has a substantially vertical shape. Thus, a steeply inclined portion can be formed on the surface of the insulating layer 123, and a thin portion can be formed in a portion of the organic layer 112W covering the portion, or a portion of the organic layer 112W can be separated. Thus, the leakage current generated between adjacent light-emitting elements through the organic layer 112W can be suppressed without processing the organic layer 112W using photolithography or the like.

[0177] The above is a description of the structural example of the display panel.

[0178] [Pixel layout] The following mainly describes Fig.15A Different pixel layouts: There is no particular restriction on the arrangement of light-emitting elements (sub-pixels), and various arrangements can be used.

[0179] As the top surface shape of the sub-pixel, for example, there can be cited polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, shapes with rounded corners of these polygons, ellipses, circles, etc. Here, the top surface shape of the sub-pixel is equivalent to the top surface shape of the light-emitting region of the light-emitting element.

[0180] Fig.17AThe pixels 150 are shown in an S-stripe arrangement. Fig.17A The pixel 150 shown is composed of three sub-pixels, namely, light emitting elements 110a, 110b, and 110c. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c may be a blue light emitting element, a red light emitting element, and a green light emitting element, respectively.

[0181] Fig. 17B The pixel 150 shown includes a light-emitting element 110a having a top surface shape that is approximately trapezoidal or triangular with rounded corners, a light-emitting element 110b having a top surface shape that is approximately trapezoidal or triangular with rounded corners, and a light-emitting element 110c having a top surface shape that is approximately quadrilateral or hexagonal with rounded corners. In addition, the light-emitting area of ​​the light-emitting element 110a is larger than that of the light-emitting element 110b. In this way, the shape and size of each light-emitting element can be determined independently. For example, the size of a light-emitting element with high reliability can be smaller. For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c can be a green light-emitting element, a red light-emitting element, and a blue light-emitting element, respectively.

[0182] Fig. 17C The pixels 124a and 124b shown are arranged in a Pentile arrangement. Fig. 17C The example of alternately arranging pixel 124a including light emitting element 110a and light emitting element 110b and pixel 124b including light emitting element 110b and light emitting element 110c is shown. For example, light emitting element 110a, light emitting element 110b and light emitting element 110c may be a red light emitting element, a green light emitting element and a blue light emitting element, respectively.

[0183] Fig.17D and Fig.17E The pixels 124a and 124b shown are arranged in a Delta arrangement. The pixel 124a includes two light-emitting elements (light-emitting elements 110a and 110b) in the upper row (first row) and one light-emitting element (light-emitting element 110c) in the lower row (second row). The pixel 124b includes one light-emitting element (light-emitting element 110c) in the upper row (first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the lower row (second row). For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c may be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively.

[0184] Fig.17D An example is shown in which each light emitting element has a top surface shape that is approximately quadrangular with rounded corners. Fig.17E An example is shown in which each light emitting element has a circular top surface shape.

[0185] Fig.17FAn example in which the light emitting elements of each color are arranged in a zigzag shape is shown. Specifically, when viewed from above, the positions of the upper sides of two light emitting elements arranged in the column direction (for example, the light emitting element 110a and the light emitting element 110b or the light emitting element 110b and the light emitting element 110c) are not consistent. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c may be a red light emitting element, a green light emitting element, and a blue light emitting element, respectively.

[0186] In photolithography, the finer the pattern being processed, the more important it is to not ignore the effect of light diffraction. Therefore, when the pattern of the photomask is transferred by exposure, its fidelity decreases, and it is difficult to process the resist mask into a desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the light-emitting element is sometimes a polygonal shape with rounded corners, an ellipse, or a circle.

[0187] Furthermore, in a method for manufacturing a display panel according to one embodiment of the present invention, an EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material of the EL layer and the curing temperature of the resist material, the curing of the resist film is sometimes insufficient. The insufficiently cured resist film sometimes has a shape that is far from the desired shape when processed. As a result, the top surface shape of the EL layer is sometimes a polygonal shape with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface shape is to be formed, a resist mask having a circular top surface shape is sometimes formed and the top surface shape of the EL layer is circular.

[0188] In order to make the top surface shape of the EL layer a desired shape, a technique (OPC (Optical Proximity Correction) technique) of pre-correcting the mask pattern so that the design pattern and the transfer pattern coincide with each other can be used. Specifically, in the OPC technique, correction patterns are added to the pattern corners on the mask pattern.

[0189] The above describes the layout of pixels.

[0190] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0191] (Implementation 3) In this embodiment, another structural example of a display panel that can be used for an electronic device according to one embodiment of the present invention is described.

[0192] The display panel of this embodiment is a high-definition display panel, which is particularly suitable for use in the display portion of wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and glasses-type AR devices.

[0193] [Display module] Fig.18A 2 is a perspective view of a display module 280. The display module 280 includes a display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and may be any one of the display panels 200B to 200F to be described later.

[0194] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is a region that displays an image.

[0195] Fig.18B Schematic perspective view showing the structure of one side of the substrate 291. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. In addition, a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected via a wiring portion 286 composed of a plurality of wirings.

[0196] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Fig.18B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a includes a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0197] The pixel circuit unit 283 includes a plurality of pixel circuits 283a arranged periodically. One pixel circuit 283a controls the light emission of three light emitting devices included in one pixel 284a. One pixel circuit 283a may include three circuits for controlling the light emission of one light emitting device. For example, the pixel circuit 283a may adopt a structure having at least one selection transistor, one current control transistor (driving transistor) and a capacitor for one light emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. Thus, an active matrix display panel can be realized.

[0198] The circuit section 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to include one or both of a gate line driving circuit and a source line driving circuit. In addition, it may also include at least one of an operation circuit, a storage circuit, and a power supply circuit. In addition, the transistor provided in the circuit section 282 may also constitute a part of the pixel circuit 283a. That is, the pixel circuit 283a may also be constituted by the transistor included in the pixel circuit section 283 and the transistor included in the circuit section 282.

[0199] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. In addition, an IC may be mounted on the FPC 290.

[0200] The display module 280 can adopt a structure in which one or both of the pixel circuit unit 283 and the circuit unit 282 are overlapped on the lower side of the pixel unit 284, so that the display unit 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display unit 281 have an extremely high definition. For example, the display unit 281 preferably arranges the pixels 284a with a definition of 2000ppi or more, more preferably 3000ppi or more, more preferably 5000ppi or more, and more preferably 6000ppi or more and 20000ppi or less or 30000ppi or less.

[0201] This display module 280 is very clear, so it is suitable for use in VR devices such as head-mounted displays or glasses-type AR devices. For example, because the display module 280 has a display unit 281 with extremely high clarity, in the structure of viewing the display unit of the display module 280 through a lens, even if the display unit is magnified by a lens, the user cannot see the pixels, thereby achieving a highly immersive display. In addition, the display module 280 can also be applied to electronic devices with a relatively small display unit. For example, it is suitable for use in the display unit of wearable electronic devices such as watch-type devices.

[0202] [Display panel 200A] Fig.19 The display panel 200A shown includes a substrate 301 , light emitting elements 110R, 110G, 110B, a capacitor 240 , and a transistor 310 .

[0203] Substrate 301 is equivalent to Fig.18A and Fig.18B The substrate 291 in.

[0204] The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311, and is used as a gate insulating layer. The low resistance region 312 is a region doped with impurities in the substrate 301, and is used as one of a source and a drain. The insulating layer 314 covers the side of the conductive layer 311.

[0205] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0206] In addition, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0207] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 therebetween. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as a dielectric of the capacitor 240.

[0208] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through the plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 via the insulating layer 243.

[0209] The cover capacitor 240 is provided with an insulating layer 255 a , an insulating layer 255 b is provided on the insulating layer 255 a , and an insulating layer 255 c is provided on the insulating layer 255 b .

[0210] Inorganic insulating films can be used as appropriate for the insulating layers 255a, 255b, and 255c. For example, it is preferable to use silicon oxide films as the insulating layers 255a and 255c, and to use a silicon nitride film as the insulating layer 255b. Thus, the insulating layer 255b can be used as an etching protection film. Although an example in which a portion of the insulating layer 255c is etched to provide a recess is shown in this embodiment, the recess may not be provided in the insulating layer 255c.

[0211] The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B are provided on the insulating layer 255 c. The structure of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B can refer to Embodiment 2.

[0212] The display panel 200A forms light-emitting elements for each light-emitting color, so the chromaticity change between low-brightness light and high-brightness light is small. In addition, the organic layers 112R, 112G, and 112B are separated from each other, so even if a high-definition display panel is used, crosstalk between adjacent sub-pixels can be suppressed. Therefore, a high-definition and high-quality display panel can be realized.

[0213] An insulating layer 125 , a resin layer 126 , and a layer 128 are provided in a region between adjacent light emitting elements.

[0214] The pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B of the light-emitting element are electrically connected to one of the source and the drain of the transistor 310 via the plug 256 embedded in the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c is the same as or substantially the same as the height of the top surface of the plug 256. Various conductive materials can be used as the plug.

[0215] Furthermore, a protective layer 121 is provided on the light emitting elements 110R, 110G, and 110B. A substrate 170 is bonded to the protective layer 121 via an adhesive layer 171 .

[0216] No insulating layer covering the top end of the pixel electrode 111 is provided between two adjacent pixel electrodes 111. Therefore, the interval between adjacent light emitting elements can be made very small. Therefore, a high-definition or high-resolution display panel can be realized.

[0217] [Display panel 200B] Fig. 20 The display panel 200B shown has a structure in which a transistor 310A and a transistor 310B are stacked, each of which forms a channel in a semiconductor substrate. Note that in the description of the display panel described later, description of the same parts as the display panel described previously may be omitted.

[0218] The display panel 200B has the following structure: a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device and a substrate 301A provided with a transistor 310A are bonded together.

[0219] Here, an insulating layer 345 is provided on the bottom surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress diffusion of impurities into the substrates 301B and 301A. As the insulating layers 345 and 346, an inorganic insulating film that can be used for the protective layer 121 or the insulating layer 332 can be used.

[0220] The substrate 301B is provided with a plug 343 that passes through the substrate 301B and the insulating layer 345. Here, it is preferable that an insulating layer 344 serving as a protective layer is provided to cover the side surface of the plug 343.

[0221] A conductive layer 342 is provided on the lower side of the substrate 301B via an insulating layer 345. The conductive layer 342 is embedded in the insulating layer 335, and the bottom surfaces of the conductive layer 342 and the insulating layer 335 are planarized. The conductive layer 342 is electrically connected to a plug 343.

[0222] On the other hand, in the substrate 301A, a conductive layer 341 is provided over an insulating layer 346. The conductive layer 341 is embedded in the insulating layer 336, and top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0223] It is preferable to use the same conductive material as the conductive layer 341 and the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above elements as a component can be used. It is particularly preferable to use copper as the conductive layer 341 and the conductive layer 342. Thus, a Cu-Cu (copper-copper) direct bonding technology (a technology for electrically conducting by connecting Cu (copper) pads to each other) can be used.

[0224] [Display panel 200C] Fig.21 The display panel 200C shown has a structure in which a conductive layer 341 and a conductive layer 342 are connected via a bump 347 .

[0225] like Fig.21 As shown, by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material including gold (Au), nickel (Ni), indium (In), tin (Sn), etc. In addition, for example, solder is sometimes used as the bump 347. In addition, an adhesive layer 348 can also be provided between the insulating layer 345 and the insulating layer 346. In addition, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0226] [Display panel 200D] Fig. 22 The main difference between the display panel 200D shown and the display panel 200A is the structure of the transistors.

[0227] The transistor 320 is a transistor (OS transistor) using a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer forming a channel.

[0228] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0229] Substrate 331 is equivalent to Fig.18A and Fig.18B The substrate 291 in.

[0230] An insulating layer 332 is provided over the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from escaping from the semiconductor layer 321 to the insulating layer 332 side. As the insulating layer 332, for example, a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

[0231] A conductive layer 327 is provided on the insulating layer 332, and an insulating layer 326 is provided so as to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that contacts the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0232] The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film exhibiting semiconductor characteristics. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0233] An insulating layer 328 is provided so as to cover the top surface and side surfaces of the pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 is used as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the insulating layer 264 to the semiconductor layer 321 and oxygen from being released from the semiconductor layer 321. As the insulating layer 328, an insulating film similar to the insulating layer 332 described above can be used.

[0234] The insulating layer 328 and the insulating layer 264 are provided with openings reaching the semiconductor layer 321. The insulating layer 323 and the conductive layer 324 are embedded in the openings and are in contact with the top surface of the semiconductor layer 321. The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

[0235] The top surfaces of the conductive layer 324 , the insulating layer 323 , and the insulating layer 264 are planarized so that their heights are uniform or substantially uniform, and the insulating layer 329 and the insulating layer 265 are provided to cover them.

[0236] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the insulating layer 265 and the like into the transistor 320. The insulating layer 329 can use an insulating film similar to the insulating layer 328 and the insulating layer 332 described above.

[0237] The plug 274 electrically connected to one of the pair of conductive layers 325 is embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a portion of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. At this time, it is preferable to use a conductive material that does not easily diffuse hydrogen and oxygen as the conductive layer 274a.

[0238] There is no particular limitation on the structure of the transistor included in the display panel of this embodiment. For example, a planar transistor, a staggered transistor, or an inversely staggered transistor may be used. In addition, a top-gate or bottom-gate transistor structure may be used. Alternatively, a gate may be provided above and below the semiconductor layer forming the channel.

[0239] As the transistor 320, a structure in which two gates sandwich a semiconductor layer forming a channel is adopted. Alternatively, the two gates may be connected and the transistor may be driven by supplying the same signal to the two gates. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0240] There is no particular restriction on the crystallinity of the semiconductor material used for the semiconductor layer of the transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor other than a single crystal semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystallized region in part thereof) can be used. When a single crystal semiconductor or a semiconductor having crystallinity is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0241] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide with a wide band gap, the off-state current of the OS transistor can be reduced.

[0242] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and cobalt) and zinc.

[0243] Alternatively, the semiconductor layer of the transistor may also include silicon. Examples of silicon include amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.), and the like.

[0244] As metal oxides that can be used for the semiconductor layer, for example, indium oxide, gallium oxide and zinc oxide can be cited. In addition, the metal oxide preferably contains two or three selected from indium, element M and zinc. Element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium and tin.

[0245] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium, gallium and zinc (also referred to as IGZO) is preferably used. Alternatively, an oxide containing indium, tin and zinc (also referred to as ITZO (registered trademark)) is preferably used. Alternatively, an oxide containing indium, gallium, tin and zinc is preferably used. Alternatively, an oxide containing indium, aluminum and zinc (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium, aluminum, gallium and zinc (also referred to as IAGZO) is preferably used.

[0246] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or in the vicinity thereof, a composition of In:M:Zn=1:1:1.2 or in the vicinity thereof, a composition of In:M:Zn=1:3:2 or in the vicinity thereof, a composition of In:M:Zn=1:3:4 or in the vicinity thereof, a composition of In:M:Zn=2:1:3 or in the vicinity thereof, a composition of In:M:Zn=3:1:2 or in the vicinity thereof, and a composition of In:M:Zn=1:3:4 or in the vicinity thereof. Zn=4:2:3 or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof. Note that the nearby compositions include a range of ±30% of the desired atomic ratio.

[0247] For example, when the composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabouts is described, the following cases are included: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. In addition, when the composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabouts is described, the following cases are included: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. In addition, when the composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabouts is described, the following cases are included: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0248] The semiconductor layer may also include two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having a composition of In:M:Zn=1:3:4 [atomic ratio] or a composition close thereto and a second metal oxide layer having a composition of In:M:Zn=1:1:1 [atomic ratio] or a composition close thereto disposed on the first metal oxide layer may be appropriately used. In addition, gallium or aluminum is particularly preferably used as the element M.

[0249] In addition, for example, a stacked-layer structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0250] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0251] Compared with transistors using amorphous silicon, the field effect mobility of OS transistors is very high. In addition, the leakage current between the source and the drain (also called the off-state current) of the OS transistor in the off state is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. In addition, by using OS transistors, the power consumption of the display panel can be reduced.

[0252] In addition, when the luminance of the light-emitting device included in the pixel circuit is increased, it is necessary to increase the amount of current flowing through the light-emitting device. To this end, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain withstand voltage of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased to improve the luminance of the light-emitting device.

[0253] In addition, when the transistor operates in the saturation region, the change in source-drain current of the OS transistor for the change in gate-source voltage is smaller than that of the Si transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail according to the change in gate-source voltage, so the amount of current flowing through the light-emitting device can be controlled. As a result, the number of grayscales of the pixel circuit can be increased.

[0254] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can make a stable current (saturation current) flow even if the source-drain voltage is gradually increased. Therefore, by using the OS transistor as a driving transistor, even if, for example, the current-voltage characteristics of the EL device are uneven, a stable current can flow through the light-emitting device. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current is almost unchanged, so the light-emitting brightness of the light-emitting device can be stabilized.

[0255] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, “reduction in power consumption”, “increase in light emission brightness”, “multi-gradation”, “suppression of unevenness in light emitting devices”, etc. can be achieved.

[0256] [Display panel 200E] Fig.23 The display panel 200E shown has a structure in which a transistor 320A and a transistor 320B are stacked, each of which includes an oxide semiconductor in a semiconductor forming a channel.

[0257] The structures of the transistor 320A, the transistor 320B and their peripheries may refer to the above-mentioned display panel 200D.

[0258] Note that although a structure in which two transistors including oxide semiconductors are stacked is used here, the present invention is not limited to this structure and, for example, a structure in which three or more transistors are stacked may be used.

[0259] [Display panel 200F] exist Fig.24 In the display panel 200F shown, a transistor 310 having a channel formed in a substrate 301 and a transistor 320 having a semiconductor layer containing a metal oxide forming the channel are stacked.

[0260] An insulating layer 261 is provided in a manner covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. In addition, an insulating layer 262 is provided in a manner covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. Both the conductive layer 251 and the conductive layer 252 are used as wiring. In addition, an insulating layer 263 and an insulating layer 332 are provided in a manner covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. In addition, an insulating layer 265 is provided in a manner covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 is electrically connected to the transistor 320 through a plug 274.

[0261] The transistor 320 can be used as a transistor constituting a pixel circuit. In addition, the transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) for driving the pixel circuit. In addition, the transistor 310 and the transistor 320 can be used as transistors constituting various circuits such as an operation circuit or a storage circuit.

[0262] With this structure, not only a pixel circuit but also a driving circuit can be formed directly under the light-emitting device, so the display panel can be miniaturized compared to the case where the driving circuit is provided around the display area.

[0263] [Display Panel 200G] exist Fig.25 In the display panel 200G shown, a transistor 310 having a channel formed in a substrate 301 , and transistors 320A and 320B having semiconductor layers containing metal oxides forming the channels are stacked.

[0264] Transistor 320A can be used as a transistor constituting a pixel circuit. Transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) for driving the pixel circuit. Transistor 320B can be used as a transistor constituting a pixel circuit, or as a transistor constituting the above-mentioned driving circuit. In addition, transistor 310, transistor 320A and transistor 320B can be used as transistors constituting various circuits such as an operation circuit or a storage circuit.

[0265] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0266] (Implementation 4) In this embodiment, a light-emitting device (light-emitting element) that can be used for a display panel which is one embodiment of the present invention is described.

[0267] In this specification, a device manufactured using a metal mask or FMM is sometimes referred to as a device having an MM (Metal Mask) structure. In addition, in this specification, a device manufactured without using a metal mask or FMM is sometimes referred to as a device having an MML (Metal Mask Less) structure.

[0268] In this specification, etc., a structure in which at least the light-emitting layers are manufactured separately in light-emitting devices with different emission wavelengths is sometimes referred to as an SBS (Side By Side) structure. Since the SBS structure can optimize the materials and structures for each light-emitting device, the freedom of choice of materials and structures is increased, and it is easy to achieve improved brightness and reliability.

[0269] In this specification, holes or electrons are sometimes shown as "carriers". Specifically, a hole injection layer or an electron injection layer is sometimes referred to as a "carrier injection layer", a hole transport layer or an electron transport layer is sometimes referred to as a "carrier transport layer", and a hole blocking layer or an electron blocking layer is sometimes referred to as a "carrier blocking layer". Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier blocking layer are sometimes not clearly distinguished based on cross-sectional shapes or characteristics. In addition, sometimes a layer has the functions of two or three of a carrier injection layer, a carrier transport layer, and a carrier blocking layer.

[0270] In this specification, etc., a light-emitting device (also referred to as a light-emitting element) includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. Here, as layers included in the EL layer (also referred to as functional layers), a light-emitting layer, a carrier injection layer (hole injection layer and electron injection layer), a carrier transport layer (hole transport layer and electron transport layer), and a carrier blocking layer (hole blocking layer and electron blocking layer) can be cited.

[0271] As the light emitting device, for example, OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) is preferably used. In addition, LED such as Micro LED (Light Emitting Diode) may also be used as the light emitting device.

[0272] The light emitting color of the light emitting device may be infrared, red, green, blue, cyan, magenta, yellow or white, etc. In addition, when the light emitting device has a microcavity structure, the color purity can be further improved.

[0273] like Fig.26AAs shown in FIG. 1 , the light-emitting device includes an EL layer 763 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The EL layer 763 may be composed of a plurality of layers such as a layer 780, a light-emitting layer 771, and a layer 790.

[0274] The light-emitting layer 771 includes at least a light-emitting substance (also referred to as a light-emitting material).

[0275] In the case where the lower electrode 761 and the upper electrode 762 are respectively the anode and the cathode, the layer 780 includes one or more of a layer containing a substance with high hole injection property (hole injection layer), a layer containing a substance with high hole transport property (hole transport layer), and a layer containing a substance with high electron blocking property (electron blocking layer). In addition, the layer 790 includes one or more of a layer containing a substance with high electron injection property (electron injection layer), a layer containing a substance with high electron transport property (electron transport layer), and a layer containing a substance with high hole blocking property (hole blocking layer). In the case where the lower electrode 761 and the upper electrode 762 are respectively the cathode and the anode, the structures of the layers 780 and 790 are reversed from the above.

[0276] The structure including the layer 780 disposed between a pair of electrodes, the light-emitting layer 771, and the layer 790 can be used as a single light-emitting unit. Fig.26A The structure is called a simple structure.

[0277] in addition, Fig.26B Show Fig.26A 1 is a modified example of the EL layer 763 included in the light-emitting device shown in FIG. Fig.26B The light-emitting device shown includes a layer 781 on a lower electrode 761 , a layer 782 on layer 781 , a light-emitting layer 771 on layer 782 , a layer 791 on light-emitting layer 771 , a layer 792 on layer 791 , and an upper electrode 762 on layer 792 .

[0278] In the case where the lower electrode 761 and the upper electrode 762 are respectively an anode and a cathode, for example, the layers 781, 782, 791, and 792 may be respectively a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. In addition, in the case where the lower electrode 761 and the upper electrode 762 are respectively a cathode and an anode, the layers 781, 782, 791, and 792 may be respectively an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. By adopting such a layer structure, carriers can be efficiently injected into the light-emitting layer 771 and the recombination efficiency of carriers in the light-emitting layer 771 can be improved.

[0279] In addition, if Fig.26C and Fig.26DAs shown in FIG. 1 , a structure in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layer 780 and layer 790 is also a modified example of a single structure. Fig.26C and Fig.26D Although an example including three light-emitting layers is shown, the light-emitting layers in the light-emitting device having a single structure may be two layers or four or more layers. In addition, the light-emitting device having a single structure may also include a buffer layer between the two light-emitting layers. The buffer layer may be formed using a material that can be used for a hole transport layer or an electron transport layer, for example.

[0280] In addition, if Fig.26E and Fig.26F As shown, in this specification, etc., a structure in which multiple light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is referred to as a series structure. In addition, the series structure may also be referred to as a stacked structure. By adopting a series structure, a light-emitting device capable of emitting light with high brightness can be realized. In addition, the series structure can improve reliability because the current required to obtain the same brightness can be reduced compared to a single structure.

[0281] Fig.26D and Fig.26F An example is shown in which the display panel includes a layer 764 overlapping the light emitting device. Fig.26D Layer 764 is shown overlapping Fig.26C The example of the light emitting device shown, Fig.26F Layer 764 is shown overlapping Fig.26E Examples of light emitting devices are shown.

[0282] As the layer 764, one or both of a color conversion layer and a color filter (coloring layer) can be used.

[0283] exist Fig.26C and Fig.26D In the embodiment, a luminescent material that emits light of the same color, or even the same luminescent material, may be used for the luminescent layer 771, the luminescent layer 772, and the luminescent layer 773. For example, a luminescent material that emits blue light may be used for the luminescent layer 771, the luminescent layer 772, and the luminescent layer 773. For a sub-pixel that emits blue light, the blue light emitted by the light-emitting device may be extracted. For a sub-pixel that emits red light and a sub-pixel that emits green light, the blue light emitted by the light-emitting device may be extracted. Fig.26D The layer 764 shown is provided as a color conversion layer, which can convert the blue light emitted by the light-emitting device into light with a longer wavelength and extract it as red light or green light.

[0284] In addition, light-emitting materials having different luminescent colors may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773. When the light emitted by the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 is in a complementary color relationship, white light emission can be obtained. For example, a light-emitting device having a single structure preferably includes a light-emitting layer containing a light-emitting material that emits blue light and a light-emitting layer containing a light-emitting material that emits visible light having a longer wavelength than blue.

[0285] For example, in the case where a light-emitting device having a single structure includes three light-emitting layers, it is preferred to include a light-emitting layer containing a light-emitting substance that emits red (R) light, a light-emitting layer containing a light-emitting substance that emits green (G) light, and a light-emitting layer containing a light-emitting substance that emits blue (B) light. As the stacking order of the light-emitting layers, the order of stacking R, G, and B in sequence from the anode side or the order of stacking R, B, and G in sequence from the anode side can be adopted. At this time, a buffer layer can also be provided between R and G or B.

[0286] In addition, for example, when a light-emitting device having a single structure includes two light-emitting layers, it is preferable to include a light-emitting layer containing a light-emitting substance emitting blue (B) light and a light-emitting layer containing a light-emitting substance emitting yellow light. This structure is sometimes called a BY single structure.

[0287] As Fig.26D The layer 764 shown may also be provided with a color filter. When white light passes through the color filter, light of a desired color may be obtained.

[0288] A light-emitting device that emits white light preferably includes two or more light-emitting substances. In order to obtain white light emission, two or more light-emitting substances whose light emission is in a complementary color relationship may be selected. For example, by making the light emission color of the first light-emitting layer and the light emission color of the second light-emitting layer in a complementary color relationship, a light-emitting device that emits white light as a whole can be obtained. In addition, the same is true for a light-emitting device including three or more light-emitting layers.

[0289] exist Fig.26E and Fig.26F In the present invention, a light-emitting material that emits light of the same color, or even the same light-emitting material, can be used for the light-emitting layer 771 and the light-emitting layer 772.

[0290] For example, in the light-emitting device included in the sub-pixel that presents light of each color, a light-emitting substance that emits blue light can also be used for the light-emitting layer 771 and the light-emitting layer 772. For the sub-pixel that presents blue light, the blue light emitted by the light-emitting device can be extracted. In addition, for the sub-pixel that presents red light and the sub-pixel that presents green light, by using Fig.26F The layer 764 shown is provided as a color conversion layer, which can convert the blue light emitted by the light-emitting device into light with a longer wavelength and extract it as red light or green light.

[0291] In addition, Fig.26E or Fig.26F When the light-emitting device of the structure shown is used to present sub-pixels of each color, different light-emitting materials can be used according to the sub-pixels. Specifically, in the light-emitting device included in the sub-pixel presenting red light, the light-emitting material that emits red light can also be used for the light-emitting layer 771 and the light-emitting layer 772. Similarly, in the light-emitting device included in the sub-pixel presenting green light, the light-emitting material that emits green light can also be used for the light-emitting layer 771 and the light-emitting layer 772. In the light-emitting device included in the sub-pixel presenting blue light, the light-emitting material that emits blue light can also be used for the light-emitting layer 771 and the light-emitting layer 772. It can be said that the display panel with such a structure uses a light-emitting device with a series structure and has an SBS structure. Thus, it has the advantages of both the series structure and the SBS structure. Thus, a light-emitting device with high brightness and high reliability can be realized.

[0292] In addition, Fig.26E and Fig.26F In the embodiment, light-emitting materials with different luminescent colors may be used for the light-emitting layer 771 and the light-emitting layer 772. When the light emitted by the light-emitting layer 771 and the light emitted by the light-emitting layer 772 are in a complementary color relationship, white light emission can be obtained. Fig.26F The layer 764 shown may also be provided with a color filter. By passing white light through the color filter, light of a desired color may be obtained.

[0293] Note that although Fig.26E and Fig.26F The example in which the light-emitting unit 763a includes one light-emitting layer 771 and the light-emitting unit 763b includes one light-emitting layer 772 is shown, but the present invention is not limited thereto. The light-emitting unit 763a and the light-emitting unit 763b may each include two or more light-emitting layers.

[0294] Although Fig.26E and Fig.26F The light emitting device includes two light emitting units, but the present invention is not limited thereto and the light emitting device may include three or more light emitting units.

[0295] Specifically, we can cite FIG. 27A to FIG. 27C The structure of the light emitting device shown.

[0296] Fig.27A Note that the structure including two light emitting units and the structure including three light emitting units may also be referred to as a two-stage series structure and a three-stage series structure, respectively.

[0297] like Fig.27AAs shown, a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series with each other via a charge generation layer 785. In addition, light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a, light-emitting unit 763b includes layer 780b, light-emitting layer 772, and layer 790b, and light-emitting unit 763c includes layer 780c, light-emitting layer 773, and layer 790c.

[0298] exist Fig.27A In the structure shown, the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 preferably each contain a light-emitting substance that emits light of the same color. Specifically, the following structures can be adopted: a structure in which the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 all contain a red (R) light-emitting substance (so-called R\R\R three-stage tandem structure); a structure in which the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 all contain a green (G) light-emitting substance (so-called G\G\G three-stage tandem structure); or a structure in which the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 all contain a blue (B) light-emitting substance (so-called B\B\B three-stage tandem structure).

[0299] Note that the light-emitting substances emitting the same color are not limited to the above structures. Fig.27B As shown in FIG. 1 , a tandem light-emitting device in which a plurality of light-emitting units including a plurality of light-emitting substances are stacked may also be used. Fig.27B In the embodiment, a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785. In addition, light-emitting unit 763a includes layer 780a, light-emitting layer 771a, light-emitting layer 771b, light-emitting layer 771c, and layer 790a, and light-emitting unit 763b includes layer 780b, light-emitting layer 772a, light-emitting layer 772b, light-emitting layer 772c, and layer 790b.

[0300] exist Fig.27B In the structure shown, the luminescent materials of the luminescent layers 771a, 771b, and 771c are selected in such a way that they emit light in a complementary color relationship to realize white luminescence (W). In addition, the luminescent materials of the luminescent layers 772a, 772b, and 772c are selected in such a way that they emit light in a complementary color relationship to realize white luminescence (W). That is, Fig.27C The structure shown is a W\W two-stage series structure. Note that there is no particular restriction on the stacking order of the luminescent materials in the luminescent layer 771a, the luminescent layer 771b, and the luminescent layer 771c in a complementary color relationship. The implementer can appropriately select the most appropriate stacking order. Although not shown in the figure, a W\W\W three-stage series structure or a series structure of four or more stages can also be used.

[0301] In addition, when using a light-emitting device with a series structure, examples include: a B\Y two-stage series structure including a light-emitting unit emitting yellow (Y) light and a light-emitting unit emitting blue (B) light; an R·G\B two-stage series structure including a light-emitting unit emitting red (R) light and green (G) light and a light-emitting unit emitting blue (B) light; a B\Y\B three-stage series structure including, in sequence, a light-emitting unit emitting blue (B) light, a light-emitting unit emitting yellow (Y) light, and a light-emitting unit emitting blue (B) light; a B\YG\B three-stage series structure including, in sequence, a light-emitting unit emitting blue (B) light, a light-emitting unit emitting yellow-green (YG) light, and a light-emitting unit emitting blue (B) light; and a B\G\B three-stage series structure including, in sequence, a light-emitting unit emitting blue (B) light, a light-emitting unit emitting green (G) light, and a light-emitting unit emitting blue (B) light, etc.

[0302] like Fig.27C As shown, a light-emitting unit including one light-emitting substance and a light-emitting unit including a plurality of light-emitting substances may be combined.

[0303] Specifically, in Fig.27C In the structure shown, a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series with each other via a charge generation layer 785. In addition, light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a, light-emitting unit 763b includes layer 780b, light-emitting layer 772a, light-emitting layer 772b, light-emitting layer 772c, and layer 790b, and light-emitting unit 763c includes layer 780c, light-emitting layer 773, and layer 790c.

[0304] For example, in Fig.27C The structure shown can adopt a B\R·G·YG\B three-stage series structure, wherein the light-emitting unit 763a is a light-emitting unit that emits blue (B) light, the light-emitting unit 763b is a light-emitting unit that emits red (R) light, green (G) light and yellow-green (YG) light, and the light-emitting unit 763c is a light-emitting unit that emits blue (B) light.

[0305] For example, as the number of layers and color sequence of the light-emitting unit, there can be cited a two-stage structure in which B and Y are stacked from the anode side, a two-stage structure in which B and the light-emitting unit X are stacked, a three-stage structure in which B, Y and B are stacked, and a three-stage structure in which B, X and B are stacked. As the number of layers and color sequence of the light-emitting layer in the light-emitting unit X, there can be adopted a two-stage structure in which R and Y are stacked from the anode side, a two-stage structure in which R and G are stacked, a two-stage structure in which G and R are stacked, a three-stage structure in which G, R and G are stacked, or a three-stage structure in which R, G and R are stacked. In addition, another layer may be provided between two light-emitting layers.

[0306] Notice, Fig.26C and Fig.26D The layers 780 and 790 in the embodiment may also be independently selected. Fig.26B The laminated structure shown is composed of two or more layers.

[0307] exist Fig.26E and Fig.26F In the embodiment, the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, and the light emitting unit 763b includes a layer 780b, a light emitting layer 772, and a layer 790b.

[0308] In the case where the lower electrode 761 and the upper electrode 762 are respectively an anode and a cathode, the layers 780a and 780b each include one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. In addition, the layers 790a and 790b each include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. In the case where the lower electrode 761 and the upper electrode 762 are respectively a cathode and an anode, the structures of the layers 780a and 790a are reversed from the above, and the structures of the layers 780b and 790b are also reversed from the above.

[0309] In the case where the lower electrode 761 and the upper electrode 762 are respectively the anode and the cathode, for example, the layer 780a includes a hole injection layer and a hole transport layer on the hole injection layer, and may also include an electron blocking layer on the hole transport layer. In addition, the layer 790a includes an electron transport layer, and may also include a hole blocking layer between the light-emitting layer 771 and the electron transport layer. In addition, the layer 780b includes a hole transport layer, and may also include an electron blocking layer on the hole transport layer. In addition, the layer 790b includes an electron transport layer and an electron injection layer on the electron transport layer, and may also include a hole blocking layer between the light-emitting layer 772 and the electron transport layer. In the case where the lower electrode 761 and the upper electrode 762 are respectively the cathode and the anode, for example, the layer 780a includes an electron injection layer and an electron transport layer on the electron injection layer, and may also include a hole blocking layer on the electron transport layer. In addition, the layer 790a includes a hole transport layer, and may also include an electron blocking layer between the light-emitting layer 771 and the hole transport layer. In addition, layer 780b includes an electron transport layer and may also include a hole blocking layer on the electron transport layer. In addition, layer 790b includes a hole transport layer and a hole injection layer on the hole transport layer and may also include an electron blocking layer between the light emitting layer 772 and the hole transport layer.

[0310] When manufacturing a light-emitting device having a tandem structure, two light-emitting units are stacked via a charge generation layer 785. The charge generation layer 785 has at least a charge generation region. The charge generation layer 785 has a function of injecting electrons into one of the two light-emitting units and injecting holes into the other when a voltage is applied between a pair of electrodes.

[0311] Next, materials that can be used for the light-emitting device are described.

[0312] A conductive film that transmits visible light is used as the electrode on the light extraction side of the lower electrode 761 and the upper electrode 762. In addition, a conductive film that reflects visible light is preferably used as the electrode on the side that does not extract light. In addition, when the display panel includes a light-emitting device that emits infrared light, it is preferred that a conductive film that transmits visible light and infrared light is used as the electrode on the light extraction side, and a conductive film that reflects visible light and infrared light is used as the electrode on the side that does not extract light.

[0313] Alternatively, a conductive film that transmits visible light may be used as the electrode on the side that does not extract light. In this case, the electrode is preferably arranged between the reflective layer and the EL layer 763. In other words, light emitted from the EL layer 763 can also be reflected by the reflective layer and extracted from the display panel.

[0314] As the material for forming a pair of electrodes of the light-emitting device, metals, alloys, conductive compounds and mixtures thereof can be appropriately used. As the material, specifically, metals such as aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium and neodymium and alloys appropriately combined therewith can be cited. In addition, as the material, indium tin oxide (In-Sn oxide, also known as ITO), In-Si-Sn oxide (also known as ITSO), indium zinc oxide (In-Zn oxide) and In-W-Zn oxide can be cited. In addition, as the material, aluminum alloys (aluminum alloys) such as alloys of aluminum, nickel and lanthanum (Al-Ni-La) and alloys of silver, palladium and copper (Ag-Pd-Cu, also known as APC) can be cited. In addition, examples of the material include elements belonging to Group 1 or Group 2 of the periodic table that are not listed above (e.g., lithium, cesium, calcium, and strontium), rare earth metals such as europium and ytterbium, alloys of appropriately combined elements, and graphene.

[0315] The light-emitting device preferably adopts an optical microcavity resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light-emitting device preferably includes an electrode that is transparent and reflective to visible light (transflective electrode), and the other preferably includes an electrode that is reflective to visible light (reflective electrode). When the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, and the light emitted from the light-emitting device can be increased.

[0316] The transflective electrode may have a stacked-layer structure of a conductive layer that can function as a reflective electrode and a conductive layer that can function as an electrode that is transmissive to visible light (also referred to as a transparent electrode).

[0317] The light transmittance of the transparent electrode is 40% or more. For example, an electrode having a transmittance of visible light (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more is preferably used as a transparent electrode of a light-emitting device. The reflectivity of the transflective electrode to visible light is 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectivity of the reflective electrode to visible light is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0318] The light-emitting device includes at least a light-emitting layer. In addition, as a layer other than the light-emitting layer, the light-emitting device may also include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, an electron blocking material, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property). For example, the light-emitting device may include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer in addition to the light-emitting layer.

[0319] The light emitting device may use a low molecular weight compound or a high molecular weight compound, and may also contain an inorganic compound. The layers constituting the light emitting device may be formed by a method such as evaporation (including vacuum evaporation), transfer, printing, inkjet, or coating.

[0320] The light-emitting layer contains one or more light-emitting substances. As the light-emitting substance, a substance that emits light in a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange or red is appropriately used. In addition, as the light-emitting substance, a substance that emits near-infrared light can also be used.

[0321] Examples of the light-emitting substance include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0322] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0323] As phosphorescent materials, for example, there can be mentioned organic metal complexes (especially iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, a pyridine skeleton, organic metal complexes (especially iridium complexes) with phenylpyridine derivatives having electron-withdrawing groups as ligands, platinum complexes, rare earth metal complexes, and the like.

[0324] In addition to the luminescent material (guest material), the light-emitting layer may also include one or more organic compounds (host material, auxiliary material, etc.) as one or more organic compounds, and one or both of a substance with high hole transport (hole transport material) and a substance with high electron transport (electron transport material) can be used. As a hole transport material, the following substances with high hole transport that can be used for a hole transport layer can be used. As an electron transport material, the following substances with high electron transport that can be used for an electron transport layer can be used. In addition, as one or more organic compounds, a bipolar material or a TADF material can also be used.

[0325] For example, the light-emitting layer preferably includes a combination of a phosphorescent material, a hole transport material that easily forms an exciplex, and an electron transport material. By adopting such a structure, light emission by ExTET (Exciplex-Triplet Energy Transfer) utilizing energy transfer from the exciplex to the luminescent substance (phosphorescent material) can be efficiently obtained. In addition, by selecting a combination in a manner that forms an exciplex that emits light with a wavelength overlapping with the absorption band on the lowest energy side of the luminescent substance, energy transfer can be smoothed, thereby efficiently obtaining light emission. By adopting the above structure, high efficiency, low voltage drive, and long life of the light-emitting device can be achieved simultaneously.

[0326] The hole injection layer is a layer containing a substance with high hole injection property, which injects holes from the anode into the hole transport layer. Examples of substances with high hole injection property include aromatic amine compounds and composite materials containing a hole transport material and an acceptor material (electron acceptor material).

[0327] As the hole transport material, the following substances having high hole transport properties that can be used in the hole transport layer can be used.

[0328] As the acceptor material, for example, an oxide of a metal belonging to Group 4 to Group 8 in the periodic table can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide can be cited. Molybdenum oxide is particularly preferably used because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, an organic acceptor material containing fluorine can also be used. In addition, organic acceptor materials such as quinone dimethane derivatives, tetrachlorobenzoquinone derivatives, and hexaazatriphenylene derivatives can also be used.

[0329] For example, as the substance having a high hole injecting property, a material including a hole transport material and an oxide of the metal belonging to Group 4 to Group 8 of the periodic table (typically molybdenum oxide) can be used.

[0330] The hole transport layer is a layer that transports holes injected from the anode through the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole transport material. As the hole transport material, preferably a hole transport material having a hole mobility of 1×10 -6 cm 2 / Vs or more. Note that as long as the hole transport property is higher than the electron transport property, substances other than the above can be used. As hole transport materials, it is preferred to use substances with high hole transport properties such as π-electron-rich aromatic hetero compounds (such as carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or aromatic amines (compounds containing aromatic amine skeletons).

[0331] The electron blocking layer is provided in contact with the light emitting layer. The electron blocking layer is a layer including a material having hole transport properties and capable of blocking electrons. The electron blocking material among the hole transport materials can be used for the electron blocking layer.

[0332] The electron blocking layer has a hole transporting property, so it can also be called a hole transporting layer. In addition, the layer having an electron blocking property in the hole transporting layer can also be called an electron blocking layer.

[0333] The electron transport layer is a layer that transports electrons injected from the cathode through the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron transport material. As the electron transport material, it is preferred to use an electron transport material with an electron mobility of 1×10 -6 cm 2 / Vs or above. Note that as long as the electron transport property is higher than the hole transport property, substances other than the above can be used. As electron transport materials, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, or metal complexes having a thiazole skeleton can be used. Substances with high electron transport properties such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or nitrogen-containing aromatic hetero compounds and other π-electron-deficient aromatic hetero compounds can also be used.

[0334] The hole blocking layer is provided in contact with the light emitting layer. The hole blocking layer is a layer including a material having electron transport properties and capable of blocking holes. The hole blocking material among the above-mentioned electron transport materials can be used for the hole blocking layer.

[0335] The hole blocking layer has an electron transporting property, so it may also be called an electron transporting layer. In addition, the layer having a hole blocking property in the electron transporting layer may also be called a hole blocking layer.

[0336] The electron injection layer is a layer containing a substance with high electron injection property that injects electrons from the cathode into the electron transport layer. As a substance with high electron injection property, an alkali metal, an alkaline earth metal or a compound thereof can be used. As a substance with high electron injection property, a composite material containing an electron transport material and a donor material (electron donor material) can also be used.

[0337] In addition, it is preferable that the difference between the LUMO level of the substance having a high electron injecting property and the work function value of the material used for the cathode is small (specifically, 0.5 eV or less).

[0338] The electron injection layer can be made of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(hydroxyquinoline) lithium (abbreviated as Liq), 2-(2-pyridyl) phenol lithium (abbreviated as LiPP), 2-(2-pyridyl)-3-hydroxypyridine (pyridinolato) lithium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl) phenol lithium (abbreviated as LiPPP), lithium oxide (LiO x ) or alkali metals such as cesium carbonate, alkaline earth metals or their compounds. In addition, the electron injection layer can also have a stacked structure of more than two layers. As this stacked structure, for example, a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer can be cited.

[0339] The electron injection layer may also contain an electron transport material. For example, a compound having a non-shared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transport material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring) and a triazine ring may be used.

[0340] The lowest unoccupied molecular orbital (LUMO) energy level of an organic compound having an unshared electron pair is preferably greater than -3.6 eV and less than -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) energy level and the LUMO energy level of an organic compound can be estimated using CV (cyclic voltammetry), photoelectron spectroscopy, absorption spectroscopy, or inverse photoelectron spectroscopy.

[0341] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as an organic compound having a non-shared electron pair. In addition, NBPhen has a high glass transition point (Tg) compared to BPhen, thereby having high heat resistance.

[0342] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably includes an acceptor material, for example, preferably includes a hole transport material and an acceptor material that can be used in the hole injection layer.

[0343] In addition, the charge generation layer preferably includes a layer containing a substance with high electron injection. This layer may also be referred to as an electron injection buffer layer. The electron injection buffer layer is preferably disposed between the charge generation region and the electron transport layer. By providing an electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be relaxed, so that the electrons generated in the charge generation region are easily injected into the electron transport layer.

[0344] The electron injection buffer layer preferably comprises an alkali metal or an alkaline earth metal, for example, a compound of an alkali metal or a compound of an alkaline earth metal. Specifically, the electron injection buffer layer preferably comprises an inorganic compound containing an alkali metal and oxygen or an inorganic compound containing an alkaline earth metal and oxygen, more preferably an inorganic compound containing lithium and oxygen (lithium oxide (Li 2 In addition, as the electron injection buffer layer, materials applicable to the above-mentioned electron injection layer can be appropriately used.

[0345] The charge generation layer preferably includes a layer containing a substance with high electron transportability. This layer may also be referred to as an electron relay layer. The electron relay layer is preferably disposed between the charge generation region and the electron injection buffer layer. When the charge generation layer does not include an electron injection buffer layer, the electron relay layer is preferably disposed between the charge generation region and the electron transport layer. The electron relay layer has the function of suppressing the interaction between the charge generation region and the electron injection buffer layer (or electron transport layer) and smoothly transferring electrons.

[0346] As the electron relay layer, it is preferable to use a phthalocyanine material such as copper (II) phthalocyanine (abbreviation: CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0347] Note that the charge generation region, the electron injection buffer layer, and the electron relay layer may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.

[0348] In addition, the charge generation layer may include a donor material instead of an acceptor material. For example, the charge generation layer may include a layer containing an electron transport material applicable to the electron injection layer and a donor material.

[0349] When stacking light-emitting units, by providing a charge generation layer between two light-emitting units, an increase in driving voltage can be suppressed.

[0350] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate. [Explanation of symbols]

[0351] 10: eye, 11: retina, 30: display device, 31: display panel, 32: linear polarizing plate, 33: phase difference plate, 34: display unit, 35: control circuit, 36: operation circuit, 37: communication device, 40: optical device, 41a: substrate, 41b: reflection surface, 41: half mirror, 42: lens, 43: phase difference plate, 44: reflection polarizing plate, 45: lens, 46: optical axis, 50: position adjustment mechanism, 51: cylinder, 52: pin, 53: cylinder cam, 54: position sensor, 55: mark, 56: ring, 60: position adjustment mechanism, 61: support, 62: cylinder, 63: rack, 64: pinion, 65: shaft, 66: knob, 67: stepping motor, 70 : pixel, 71: sub-pixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 80: display unit, 82: area, 83: area, 84: screw shaft, 85: nut, 86: light source, 87: light sensor, 90: frame, 91: belt, 92: display unit, 100a: display panel, 100b: display panel, 100W: light-emitting element, 100: display panel, 101: substrate, 110a: light-emitting element, 110B: light-emitting element, 110b: light-emitting element, 110c: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 110: light-emitting element, 111B: pixel electrode, 111C: connecting electrode, 111 G: pixel electrode, 111R: pixel electrode, 111: pixel electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 112: organic layer, 113: common electrode, 114: common layer, 115B: conductive layer, 115G: conductive layer, 115R: conductive layer, 115: optical adjustment layer, 116B: coloring layer, 116G: coloring layer, 116R: coloring layer, 121: protective layer, 122: insulating layer, 123: insulating layer, 124a: pixel, 124b: pixel, 125: insulating layer, 126: resin layer, 128: layer, 140: connecting part, 150: pixel, 170: substrate, 171: adhesive layer, 200A: display panel, 200B: display panel, 200C: display panel, 200D: display panel, 200E: display panel, 200F: display panel, 200G: display panel, 240: capacitor, 241: conductive layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display unit, 282: circuit unit,283a: pixel circuit, 283: pixel circuit portion, 284a: pixel, 284: pixel portion, 285: terminal portion, 286: wiring portion, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 761: lower electrode, 762: upper electrode, 763a: light emitting unit, 763b: light emitting unit, 763c: light emitting unit, 763: EL layer, 764: layer, 771a: light emitting layer, 771b: light emitting layer, 771 c: light-emitting layer, 771: light-emitting layer, 772a: light-emitting layer, 772b: light-emitting layer, 772c: light-emitting layer, 772: light-emitting layer, 773: light-emitting layer, 780a: layer, 780b: layer, 780c: layer, 780: layer, 781: layer, 782: layer, 785: charge generation layer, 790a: layer, 790b: layer, 790c: layer, 790: layer, 791: layer, 792: layer,

Claims

1. An electronic device, comprising: Display panel; First lens; as well as Position adjustment mechanism, Wherein, the optical axis of the first lens intersects the display portion of the display panel vertically, The position adjustment mechanism is connected to the first lens. Furthermore, the electronic device has a function of changing the size and the distortion rate of the image displayed on the display unit according to the distance between the first lens and the display unit changed by the position adjustment mechanism.

2. The electronic device according to claim 1, The position adjustment mechanism includes a cylindrical cam.

3. The electronic device according to claim 1, The position adjustment mechanism includes a stepping motor.

4. The electronic device according to claim 1, The display panel includes an organic EL element.

5. The electronic device according to claim 1, The position adjustment mechanism includes a position sensor. And the position sensor has a function of detecting the position of the first lens.

6. The electronic device according to any one of claims 1 to 5, further comprising a linear polarizer, a first phase difference plate, a half mirror, a second lens, a second phase difference plate and a reflective polarizer, The display panel, the linear polarizing plate, the first phase difference plate, the half mirror, the second lens, the second phase difference plate, the reflective polarizing plate, and the first lens are sequentially arranged in a manner that they have overlapping areas.

7. The electronic device according to any one of claims 1 to 5, When the first lens is located at a first position, the size and the distortion rate of the image displayed on the display unit are 1; when the first lens is located at a second position closer to the display panel than the first position, the size of the image displayed on the display unit is less than 1 and the distortion rate is greater than 1.

8. The electronic device according to claim 7, The image displayed on the display unit is a rectangular image distorted into a barrel-shaped image.

Images